JP2005085586A5 - - Google Patents
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- JP2005085586A5 JP2005085586A5 JP2003315932A JP2003315932A JP2005085586A5 JP 2005085586 A5 JP2005085586 A5 JP 2005085586A5 JP 2003315932 A JP2003315932 A JP 2003315932A JP 2003315932 A JP2003315932 A JP 2003315932A JP 2005085586 A5 JP2005085586 A5 JP 2005085586A5
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- Prior art keywords
- discharge
- voltage
- plasma
- electrodes
- processing
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Claims (5)
前記放電処理電圧を間欠的ないし連続的に印加するプラズマ処理工程の前工程および／または後工程として、前記放電処理電圧より低く前記電極間で放電が立たない放電準備電圧を前記電極間に印加することを特徴とする放電プラズマ処理方法。 Discharge plasma comprising a pair of opposing electrodes, each having at least one electrode facing surface covered with a solid dielectric, and applying a discharge treatment voltage between the electrodes to cause discharge to generate plasma to plasma-treat the workpiece. A processing method,
As a pre-process and / or a post-process of the plasma processing step in which the discharge processing voltage is applied intermittently or continuously, a discharge preparation voltage lower than the discharge processing voltage and causing no discharge between the electrodes is applied between the electrodes. A discharge plasma processing method.
前記被処理物を、前記前工程として電極間に順次設置する工程と、前記電極間に設置された被処理物をプラズマ処理する工程と、前記後工程としてプラズマ処理後の被処理物を撤去する工程とを備え、前記設置工程および／または撤去工程では、前記放電準備電圧を前記電極間に印加することを特徴とする放電プラズマ処理方法。 A method of plasma processing a plurality of objects to be processed by the discharge plasma processing method according to claim 1,
The step of sequentially placing the object to be treated between the electrodes as the pre-process, the step of plasma-treating the object to be treated disposed between the electrodes, and removing the object to be treated after the plasma treatment as the post-process A discharge plasma processing method comprising: applying a discharge preparation voltage between the electrodes in the installation step and / or the removal step.
該処理装置は、前記電極に印加する電圧を制御する手段を備え、該電圧制御手段は、前記放電処理電圧の間欠的ないし連続的な印加前および／または印加後に、該放電処理電圧より低く前記電極間で放電が立たない放電準備電圧を印加制御することを特徴とする放電プラズマ処理装置。 Discharge plasma comprising a pair of opposing electrodes, each having at least one electrode facing surface covered with a solid dielectric, and applying a discharge treatment voltage between the electrodes to cause discharge to generate plasma to plasma-treat the workpiece. A processing device comprising:
The processing apparatus includes means for controlling a voltage applied to the electrode, and the voltage control means is lower than the discharge processing voltage before and / or after the intermittent or continuous application of the discharge processing voltage. A discharge plasma processing apparatus characterized by applying and controlling a discharge preparation voltage that does not cause a discharge between electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003315932A JP3773510B2 (en) | 2003-09-08 | 2003-09-08 | Discharge plasma processing method and discharge plasma processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003315932A JP3773510B2 (en) | 2003-09-08 | 2003-09-08 | Discharge plasma processing method and discharge plasma processing apparatus |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005085586A JP2005085586A (en) | 2005-03-31 |
| JP2005085586A5 true JP2005085586A5 (en) | 2005-07-14 |
| JP3773510B2 JP3773510B2 (en) | 2006-05-10 |
Family
ID=34416030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003315932A Expired - Fee Related JP3773510B2 (en) | 2003-09-08 | 2003-09-08 | Discharge plasma processing method and discharge plasma processing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3773510B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5336691B2 (en) * | 2005-09-16 | 2013-11-06 | 国立大学法人東北大学 | Plasma generator, surface treatment apparatus, light source, plasma generation method, surface treatment method, and light irradiation method |
| US7914692B2 (en) | 2006-08-29 | 2011-03-29 | Ngk Insulators, Ltd. | Methods of generating plasma, of etching an organic material film, of generating minus ions, of oxidation and nitriding |
| JP6376685B2 (en) * | 2014-05-16 | 2018-08-22 | 東レエンジニアリング株式会社 | Thin film forming apparatus and thin film forming method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5864030A (en) * | 1981-10-13 | 1983-04-16 | Nec Kyushu Ltd | Plasma etching device |
| JPS63102318A (en) * | 1986-10-20 | 1988-05-07 | Tokyo Electron Ltd | Plasma etching method |
| JPH04199816A (en) * | 1990-11-29 | 1992-07-21 | Mitsubishi Electric Corp | Plasma cvd equipment |
| JP4378592B2 (en) * | 2000-11-13 | 2009-12-09 | 株式会社安川電機 | Control method of discharge generator |
| JP2002217168A (en) * | 2001-01-15 | 2002-08-02 | Nec Corp | Method of plasma treatment |
-
2003
- 2003-09-08 JP JP2003315932A patent/JP3773510B2/en not_active Expired - Fee Related
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