JPH04199816A - Plasma cvd equipment - Google Patents
Plasma cvd equipmentInfo
- Publication number
- JPH04199816A JPH04199816A JP33616690A JP33616690A JPH04199816A JP H04199816 A JPH04199816 A JP H04199816A JP 33616690 A JP33616690 A JP 33616690A JP 33616690 A JP33616690 A JP 33616690A JP H04199816 A JPH04199816 A JP H04199816A
- Authority
- JP
- Japan
- Prior art keywords
- high frequency
- plasma discharge
- state
- plasma cvd
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008021 deposition Effects 0.000 claims abstract description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 8
- 230000002159 abnormal effect Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体装置の製造過程において使用される
プラズマＣＶＤ装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a plasma CVD apparatus used in the manufacturing process of semiconductor devices.
第２図はプラズマＣＶＤ装置におけるデボ開始時の高周
波の印加方法を示す図である。図において、（１）は高
周波がかかっていない状態、（２）は高周波が印加され
るポイント、（３）は高周波が印加されている状態を示
す。横軸は時間軸である。FIG. 2 is a diagram illustrating a method of applying high frequency waves at the start of deposition in a plasma CVD apparatus. In the figure, (1) shows a state where high frequency is not applied, (2) shows a point where high frequency is applied, and (3) shows a state where high frequency is applied. The horizontal axis is the time axis.
次に動作について説明する。第２図の（１）の状態は、
高周波が印加されていないので、プラズマは放電してい
ない。（２）のポイントの少し前に、成膜に必要なガス
が流れはじめて、規定の流量に達する。そして、（２）
のポイントで、高周波が印加されて、プラズマ放電が発
生して、必要な膜が形成される。Next, the operation will be explained. The state (1) in Figure 2 is
Since no high frequency is applied, the plasma is not being discharged. A little before point (2), the gas necessary for film formation begins to flow and reaches a specified flow rate. And (2)
At this point, a high frequency is applied and a plasma discharge is generated to form the required film.
従来のプラズマＣＶＤ装置は以上のように構成されてい
るので、３５０°息下の低温にてデポする場合、デボ開
始時にプラズマ放電が安定せず、異常放電の発生をもた
らすなどの問題点があった。Conventional plasma CVD equipment is configured as described above, so when depositing at a low temperature of 350 degrees, there are problems such as the plasma discharge being unstable at the start of deposition, resulting in abnormal discharge. Ta.
この発明は上記のような問題点を解消するためになされ
たもので、デボ開始時のプラズマ放電を安定できるプラ
ズマＣＶＤ装置を得ることを目的とする。This invention was made to solve the above-mentioned problems, and an object of the invention is to obtain a plasma CVD apparatus that can stabilize plasma discharge at the start of deposition.
この発明に係るプラズマＣＶＤ装置は、デボ開始時に高
周波パワーを徐々にアップさせる手段を有するものであ
る。The plasma CVD apparatus according to the present invention has means for gradually increasing the high frequency power at the time of starting the deposition.
この発明におけるプラズマＣＶＤ装置は、デボ開始時に
高周波パワーを徐々に印加することにょリ、プラズマ放
電を安定させ、異常放電を防止する。The plasma CVD apparatus according to the present invention stabilizes plasma discharge and prevents abnormal discharge by gradually applying high-frequency power at the start of decomposition.
次にこの発明の詳細な説明する。 Next, this invention will be explained in detail.
第１図はこの発明の一実施例によるプラズマＣＶＤ装置
におけるデボ開始時の高周波の印加方法を示す図である
。図において、（１）は高周波がかかつていない状態、
（４）から（６）は徐々に高周波が印加される状態を示
す。横軸は時間軸である。FIG. 1 is a diagram showing a method of applying high frequency waves at the time of starting a deposition in a plasma CVD apparatus according to an embodiment of the present invention. In the figure, (1) is a state where high frequency is not present,
(4) to (6) show states in which high frequency is gradually applied. The horizontal axis is the time axis.
次に動作について説明する。第１図の（１）の状態は高
周波が印加されていないので、プラズマ放電はしていな
い。（２）のポイントの少し前に、成膜に必要なガスが
流れはじめて、規定の流量に達する。Next, the operation will be explained. In the state (1) of FIG. 1, no high frequency is applied, so no plasma discharge occurs. A little before point (2), the gas necessary for film formation begins to flow and reaches a specified flow rate.
そして、（４）から（６）へと、ステップ毎に徐々に高
周波パワーを高めていく。そうすることで、プラズマ放
電は徐々に強くなっていき、初期でのプラズマ放電は安
定したものになる。Then, from (4) to (6), the high frequency power is gradually increased step by step. By doing so, the plasma discharge gradually becomes stronger, and the initial plasma discharge becomes stable.
なお、上記実施例では、プラズマＣＶＤ装置に例をとっ
たが、ＣＶＤ装置以外の高周波電源を有したプラズマ放
電を利用した装置であってもよく、上記実施例と同様の
効果を奏する。In the above embodiments, a plasma CVD apparatus is used as an example, but an apparatus other than a CVD apparatus that uses plasma discharge and has a high frequency power source may be used, and the same effects as in the above embodiments can be obtained.
以上のように、この発明によれば、デボ開始時に、高周
波パワーを徐々にアップするように構成したので、プラ
ズマ放電が安定し、異常放電を防ぐことができろ。As described above, according to the present invention, since the high frequency power is gradually increased at the start of debossing, plasma discharge is stabilized and abnormal discharge can be prevented.
第１図はこの発明の一実施例によるプラズマＣＶＤ装置
におけるデボ開始時の高周波の印加方法を示す図、第２
図は従来のプラズマＣＶＤ装置におけるデボ開始時の高
周波の印加方法を示す図である。
図において、（１）は高周波が印加されていない状態、
（２）は高周波が印加されるポイント、（３）は高周波
が印加されている状態、（４）から（６）は、徐々に高
周波が印加される状態である。
なお、図中、同一符号は同一、又は相当部分を示す。FIG. 1 is a diagram showing a method of applying high frequency at the time of starting debossing in a plasma CVD apparatus according to an embodiment of the present invention, and FIG.
The figure is a diagram showing a method of applying high frequency waves at the start of deposition in a conventional plasma CVD apparatus. In the figure, (1) is a state where high frequency is not applied;
(2) is a point where high frequency is applied, (3) is a state where high frequency is being applied, and (4) to (6) is a state where high frequency is gradually applied. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
有し、プラズマ放電を安定させることを特徴とするプラ
ズマＣＶＤ装置。A plasma CVD apparatus characterized by having means for gradually increasing high frequency power at the start of deposition to stabilize plasma discharge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33616690A JPH04199816A (en) | 1990-11-29 | 1990-11-29 | Plasma cvd equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33616690A JPH04199816A (en) | 1990-11-29 | 1990-11-29 | Plasma cvd equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04199816A true JPH04199816A (en) | 1992-07-21 |
Family
ID=18296356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33616690A Pending JPH04199816A (en) | 1990-11-29 | 1990-11-29 | Plasma cvd equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04199816A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5939831A (en) * | 1996-11-13 | 1999-08-17 | Applied Materials, Inc. | Methods and apparatus for pre-stabilized plasma generation for microwave clean applications |
| FR2842388A1 (en) * | 2002-07-11 | 2004-01-16 | Cit Alcatel | METHOD AND DEVICE FOR ETCHING SUBSTRATE BY INDUCTIVE PLASMA WITH VERY HIGH POWER |
| JP2005085586A (en) * | 2003-09-08 | 2005-03-31 | Sekisui Chem Co Ltd | Discharge plasma processing method, and discharge plasma processing device |
-
1990
- 1990-11-29 JP JP33616690A patent/JPH04199816A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5939831A (en) * | 1996-11-13 | 1999-08-17 | Applied Materials, Inc. | Methods and apparatus for pre-stabilized plasma generation for microwave clean applications |
| FR2842388A1 (en) * | 2002-07-11 | 2004-01-16 | Cit Alcatel | METHOD AND DEVICE FOR ETCHING SUBSTRATE BY INDUCTIVE PLASMA WITH VERY HIGH POWER |
| WO2004008816A3 (en) * | 2002-07-11 | 2005-03-10 | Cit Alcatel | Method and device for substrate etching with very high power inductively coupled plasma |
| JP2005085586A (en) * | 2003-09-08 | 2005-03-31 | Sekisui Chem Co Ltd | Discharge plasma processing method, and discharge plasma processing device |
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