JP2007208302A5

JP2007208302A5 -

Info

Publication number: JP2007208302A5
Application number: JP2007128741A
Authority: JP
Filing date: 2007-05-15
Publication date: 2010-02-12
Anticipated expiration: 2022-08-30

Claims

A plasma processing method for performing plasma processing by applying plasma to a substrate to be processed,
A step of applying high-frequency power of low power to a lower electrode on which the substrate to be processed is placed after the substrate to be processed is carried into a processing chamber for performing the plasma processing and before the plasma processing is performed;
Applying high-frequency power of low power to the upper electrode provided facing the lower electrode;
Applying a DC voltage to the electrostatic chuck for attracting and holding the substrate to be processed;
Applying high power high frequency power to the lower electrode;
Applying a high-frequency high-frequency power to the upper electrode to perform a plasma treatment on the substrate to be processed;
In the order described above.

The plasma processing method according to claim 1,
Between the step of applying low power high frequency power to the upper electrode and the step of applying a DC voltage to the electrostatic chuck,
A plasma processing method comprising: a step of stopping application of low-power high-frequency power to the lower electrode; and a step of stopping application of low-power high-frequency power to the upper electrode.

A plasma processing method for performing plasma processing by applying plasma to a substrate to be processed,
  Carrying the substrate to be processed into a processing chamber for performing the plasma processing;
  Generating plasma and applying high-frequency power having a lower power than the high-frequency power applied during the plasma treatment; and
  Applying a DC voltage to the electrostatic chuck for attracting and holding the substrate to be processed;
  Stopping the application of high-frequency power having a lower power than the high-frequency power applied during the plasma treatment;
  Applying high-frequency power for performing the plasma treatment;
  A plasma processing method comprising:

The plasma processing method according to claim 3, wherein
  A step of reducing the applied high frequency power at the end of the plasma treatment to be lower than the high frequency power applied during the plasma treatment;
  Stopping application of DC voltage to the electrostatic chuck;
  Stopping the application of the high-frequency power;
  Unloading the substrate to be processed from within the processing chamber;
  A plasma processing method comprising:

A plasma processing method for performing plasma processing by applying plasma to a substrate to be processed,
  Applying high-frequency power for performing the plasma processing while applying a predetermined DC voltage to an electrostatic chuck that holds the substrate to be processed by suction; and
  A step of lowering the high frequency power applied at the end of the plasma processing to be lower than the high frequency power applied during the plasma processing;
  Applying a DC voltage having a polarity opposite to the predetermined DC voltage to the electrostatic chuck;
  Stopping application of the reverse polarity DC voltage;
  Stopping the application of the high-frequency power;
  Unloading the substrate to be processed from the processing chamber;
  And the steps are performed in the order described above.

Before each step,
  Carrying the substrate to be processed into the processing chamber for performing the plasma processing;
  Applying a high frequency power having a lower power than the high frequency power applied during the plasma treatment;
  Applying the predetermined DC voltage to the electrostatic chuck;
  The plasma processing method according to claim 5, further comprising:

In applying radio-frequency power before Symbol Low have power, weaker plasma than plasmas for use in the plasma processing is applied to the substrate to be processed, said weak plasma, Ar gas, or O ₂ gas, or CF ₄ gas, or N plasma processing method according to claim 1-6 any one of claims, characterized in that the formed plasma by ₂ gas.

In applying radio-frequency power before Symbol Low have power, the weaker plasma than plasmas for use in plasma processing is applied to the substrate to be processed, said weak plasma, the 0.15~1.0W / cm ² claim 1-7 the plasma processing method according to any one of the preceding, wherein the formed by the high frequency power.

In applying radio-frequency power before Symbol Low have power, the weaker plasma than plasmas for use in plasma processing is applied to the substrate to be processed, said weak plasma, the substrate to be processed between 5 and 20 seconds claim 1-8 the plasma processing method according to any one of the preceding, wherein the exerting.

In the plasma processing method of any one of Claims 1-4,
A plasma processing method, wherein, when the application of the DC voltage to the electrostatic chuck is stopped, a DC voltage having a polarity opposite to that at the time of adsorption is applied to the electrostatic chuck.

A plasma processing mechanism for performing plasma processing on the substrate to be processed, the plasma processing mechanism supplying a high-frequency power for generating plasma; and an electrostatic chuck for holding the substrate to be suctioned A plasma processing apparatus comprising: a DC power source that supplies a DC voltage to the electrostatic chuck; and a gas supply system that supplies a gas for generating plasma,
A plasma processing apparatus comprising a control unit that controls the plasma processing mechanism and performs the plasma processing method according to claim 1 .