JP2009194194A - Method of plasma treatment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide method of plasma treatment, which applies plasma treatment on the whole surface of the insulating substrate uniformly and efficiently by cooling the insulating substrate before starting the plasma treatment. <P>SOLUTION: DC voltage is impressed on the electrodes 26, 27 of an electrostatic chuck 21 with the insulating substrate K disposed on the upper surface thereof and inert gas is supplied into a treatment chamber 11 to change the inert gas into plasma and attract the insulating substrate K onto the electrostatic chuck 21 to retain it, thereafter, the supply of cooling gas inbetween the rear surface of the insulating substrate K attracted and retained on the electrostatic chuck 21 and the upper surface of the electrostatic chuck 21 is started, subsequently, treatment gas for plasma treatment is supplied into the treatment chamber 11 instead of the inert gas to replace the inside of the treatment chamber by the treatment gas and to process the insulating substrate K by the treatment gas, which is changed into plasma, while changing the treatment gas into plasma successively under the state of attracting and retaining the insulating substrate K on the electrostatic chuck 21 while cooling the insulating substrate K by the cooling gas. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a plasma processing method for performing plasma processing on an insulating substrate by converting a predetermined processing gas into plasma.

  As an example of the plasma processing, for example, an etching process can be cited. As an apparatus for performing such an etching process on a substrate to be processed, for example, an etching apparatus disclosed in Japanese Patent Publication No. 56-53853 is conventionally known. Are known.

  This etching apparatus is provided on a vacuum chamber, a pair of electrodes arranged vertically opposite to each other in the vacuum chamber, a conductive rubber sheet provided on the upper surface of the lower electrode, and the conductive rubber sheet A dielectric film, a high frequency power source for applying a high frequency voltage to the lower electrode, a DC power source for applying a DC voltage to the lower electrode, an exhaust device for reducing the pressure in the vacuum chamber, and an etching gas in the vacuum chamber A gas introducing device to be supplied and a cooler for cooling the lower electrode are provided, the upper electrode is grounded, and the substrate to be etched is placed on the upper surface of the dielectric film.

  In this etching apparatus, the substrate is placed on the upper surface of the dielectric film, the inside of the vacuum chamber is filled with the etching gas by the exhaust device and the gas introduction device, and then the high frequency voltage is applied to the lower electrode by the high frequency power source. In addition, a DC voltage is applied to the lower electrode by a DC power source.

  When a high frequency voltage is applied to the lower electrode, the etching gas in the vacuum chamber is turned into plasma, and the substrate on the dielectric film is etched by the plasmaized etching gas. In addition, when a DC voltage is applied to the lower electrode and plasma is generated in the vacuum chamber, an electric circuit in which charges having different polarities are induced between the dielectric film and the substrate passes through the plasma. As a result, an attracting force is generated between the dielectric film and the substrate, and the substrate is attracted to the dielectric film side.

  Furthermore, when the substrate is adsorbed to the dielectric film side, heat transfer is effectively performed between the lower electrode cooled by the cooler and the substrate, and the substrate heated by the plasma is cooled. The The substrate is cooled because some of the films formed on the substrate are vulnerable to heat, such as a resist film, and the substrate is used for efficient and uniform etching. This is because the temperature needs to be controlled.

Japanese Patent Publication No. 56-53853

  However, if the substrate is adsorbed to the dielectric film side at the same time as the plasma of the etching gas is generated as in the above conventional example, the cooling of the substrate starts from the start of the etching process, so the etching process starts. For a certain period of time later, a stable etching process cannot be performed due to the problem that the substrate temperature is not constant or the cooling of the substrate heated by the plasma of the etching gas becomes insufficient. Therefore, a highly accurate etching shape cannot be obtained.

  When the substrate to be etched is an insulating substrate such as a glass substrate, simply applying a DC voltage to the lower electrode induces charges having different polarities between the dielectric film and the insulating substrate. As described above, even if a DC voltage is applied to the lower electrode as long as no plasma is generated as described above, the insulating circuit cannot be adsorbed to the dielectric film side. The insulating substrate cannot be cooled by being attracted to the dielectric film side.

  The present invention has been made in view of the above circumstances, and is a plasma processing method capable of cooling an insulating substrate before the start of plasma processing and uniformly and efficiently performing plasma processing on the entire surface of the insulating substrate. The purpose is to provide

To achieve the above object, the present invention provides:
A method of processing an insulating substrate by disposing an insulating substrate in a processing chamber, supplying a processing gas for performing plasma processing in the processing chamber, and converting the plasma into a plasma.
After placing the insulating substrate on the upper surface of the electrostatic chuck disposed in the processing chamber,
A DC voltage is applied to the electrode of the electrostatic chuck, an inert gas that does not contribute to the plasma processing is supplied into the processing chamber, the inert gas is turned into plasma, and the insulating substrate is placed on the electrostatic chuck. Adsorb, hold,
Then, a cooling gas is supplied between the back surface of the insulating substrate attracted and held on the electrostatic chuck and the top surface of the electrostatic chuck to start cooling the insulating substrate.
Next, in place of the inert gas, the processing gas is supplied into the processing chamber to replace the inside with the processing gas, and the processing gas is turned into plasma to continue the insulating substrate on the electrostatic chuck. The present invention relates to a plasma processing method characterized in that the insulating substrate is processed while being adsorbed and held and cooled by the cooling gas.

  The electrostatic chuck includes a substrate holding member (susceptor) which is made of a dielectric material and on which a substrate is placed, an electrode embedded in the substrate holding member, and a direct current that applies a DC voltage to the electrode. A substrate mounting table that also functions as an electrode, a substrate mounting table that also functions as an electrode, a dielectric layer that is formed on the upper surface of the substrate mounting table and on which the substrate is mounted, and a DC voltage is applied to the substrate mounting table In the former, a DC voltage is applied to the electrode between the substrate holding member and the upper substrate, and the latter is applied to the substrate mounting table to apply the DC voltage to the dielectric layer. An adsorption force based on an electrostatic force such as a Coulomb force or a Johnson-Labeck force is generated between the substrate on the upper surface, thereby holding and fixing the substrate.

  In addition, the electrostatic chuck is usually used when, for example, holding and fixing a silicon substrate. When the substrate to be held and fixed is an insulating substrate, it exhibits electrical insulation, so that it is simply an electrode. Alternatively, only by applying a DC voltage to the substrate mounting table, as described above, an adsorption force cannot be generated between the substrate holding member or the dielectric layer and the insulating substrate, and the insulating substrate cannot be adsorbed.

  In this invention, first, an insulating substrate is placed on the upper surface of the electrostatic chuck in the processing chamber, then a DC voltage is applied to the electrode of the electrostatic chuck, and an inert gas that does not contribute to plasma processing in the processing chamber. The inert gas is turned into plasma and the insulating substrate is adsorbed and held on the electrostatic chuck.

  When a DC voltage is applied to the electrode and plasma is generated in the processing chamber, an electric circuit is formed through the plasma so that charges of different polarities are induced between the electrostatic chuck and the insulating substrate. An attracting force is generated between the substrate and the electrostatic chuck, and the insulating substrate is attracted and held on the electrostatic chuck.

  Next, cooling gas is supplied between the back surface of the insulating substrate attracted and held on the electrostatic chuck and the upper surface of the electrostatic chuck to start cooling the insulating substrate.

  Thereafter, a processing gas for performing plasma processing instead of an inert gas is supplied into the processing chamber and the inside thereof is replaced with the processing gas, and the processing gas is converted into a plasma so that an insulating substrate is continuously formed on the electrostatic chuck. The insulating substrate is processed while adsorbing and holding and cooling the insulating substrate with a cooling gas. Since the insulating substrate is cooled before the plasma processing is actually started, the temperature of the insulating substrate is kept constant even after the plasma processing is started, or the insulating substrate heated by the plasma of the processing gas is subjected to the plasma processing. Cooling can be sufficiently performed immediately after the start, and stable processing can be performed immediately after the start of the plasma processing. In this manner, the plasma treatment can be performed on the insulating substrate to be subjected to the plasma treatment.

  The insulating substrate is, for example, a glass substrate, the inert gas is, for example, argon gas or helium gas, and the cooling gas is, for example, helium gas. Examples thereof include, but are not limited to, an etching process, an ashing process, and a film forming process.

  Thus, according to the plasma processing method of the present invention, after supplying an inert gas irrelevant to the plasma processing, converting the plasma to adsorption onto the electrostatic chuck, and starting the cooling of the insulating substrate, Since the insulating substrate is processed by supplying a processing gas for performing plasma processing and converting it into plasma, the insulating substrate can be cooled before the start of the plasma processing, and a high cooling effect immediately after the start of the plasma processing. Can be obtained. Accordingly, stable plasma processing can be performed, and plasma processing can be performed uniformly and efficiently on the entire surface of the insulating substrate. In addition, there is no need to use a special electrode structure for the electrostatic chuck or to apply a high DC voltage to the electrode of the electrostatic chuck. The insulating substrate can be adsorbed and cooled before the start of processing.

  Hereinafter, a plasma processing method according to a specific embodiment of the present invention will be described with reference to the accompanying drawings. In the present embodiment, a case where the etching apparatus 1 as shown in FIG. 1 is used and an etching process is performed on the glass substrate K to be etched will be described as an example.

  First, the etching apparatus 1 shown in FIG. 1 will be described. The etching apparatus 1 has a closed space, a processing chamber 11 in which a glass substrate K to be etched is disposed, a substrate holding apparatus 20 that holds the glass substrate K, and a pressure in the processing chamber 11 is reduced. An exhaust apparatus 35 for performing an etching process, a gas supply apparatus 38 for supplying an inert gas that does not contribute to the etching process into the processing chamber 11, and a processing gas and an inert gas supplied to the processing chamber 11 A plasma generation device 42 that converts gas into plasma and a first high-frequency power source 45 that applies a high-frequency voltage to the main body 23 of the substrate holding device 20 are provided.

  The processing chamber 11 includes a lower container 12 and an upper container 13 having internal spaces communicating with each other. The upper container 13 is formed smaller than the lower container 12. An opening 12 a for carrying in and out of the glass substrate K is formed on the side wall of the lower container 12, and the opening 12 a is opened and closed by a shutter 14.

  The substrate holding device 20 includes an electrostatic chuck 21 that sucks and holds the glass substrate K, a cooling mechanism 30 that cools the glass substrate K held by the electrostatic chuck 21, and a base 22 of the electrostatic chuck 21. And an elevating cylinder 33 for elevating and lowering.

  The electrostatic chuck 21 includes a metal main body 23 disposed in the lower container 12, insulating films 24 and 25 stacked on the upper surface of the main body 23, and two electrodes 26 embedded between the insulating films 24 and 25. 27 (first electrode 26 and second electrode 27), and DC power supplies 28 and 29 (first DC power supply 28 and second DC power supply) for applying DC voltages having different polarities to the electrodes 26 and 27, respectively. 29), and an elevating cylinder 33 is connected to the lower surface of the main body 23.

  A plurality of grooves (not shown) are formed on the upper surface of the insulating film 25, and the glass substrate K is placed on the upper surface of the insulating film 25. The first DC power supply 28 and the second DC power supply 29 apply DC voltages having different polarities to the first electrode 26 and the second electrode 27, respectively.

  When the substrate to be attracted is, for example, a silicon substrate, the electrostatic chuck 21 can be applied between the silicon substrate and the insulating film 25 only by applying a DC voltage to the electrodes 26 and 27. The silicon substrate can be adsorbed and held by generating an adsorbing force based on electrostatic force such as Coulomb force or Johnson / Labeck force, but the substrate to be adsorbed and held is a glass substrate K as in this example. In some cases, this exhibits electrical insulation, so that simply applying a DC voltage to each of the electrodes 26 and 27 cannot produce such an attractive force, and adsorbs and holds it. I can't.

  The cooling mechanism 30 includes a plurality of supply pipes 31 arranged such that the upper end penetrates from the back side of the base 22 (the main body 23 and the insulating films 24 and 25) and opens to the upper surface of the insulating film 25, and these A cooling gas supply unit 32 that supplies a cooling gas (for example, helium gas) to each supply pipe 31 and discharges it from the upper end opening of each supply pipe 31, and is discharged from the upper end opening of each supply pipe 31. The glass substrate K is cooled by a cooling gas flowing in a groove (not shown) on the upper surface of the insulating film 25.

  The exhaust device 35 includes an exhaust pump 36 and an exhaust pipe 37 that connects the exhaust pump 36 and the lower container 12, and exhausts the gas in the lower container 12 through the exhaust pipe 37. The inside is set to a predetermined pressure.

  The gas supply device 38 includes a processing gas supply unit 39 for supplying a gas containing an etching gas (for example, trifluoromethane gas, carbon tetrafluoride gas, oxygen gas, etc.) as the processing gas, and the inert gas ( For example, an inert gas supply unit 40 that supplies argon gas or helium gas), one end side is connected to the upper surface of the upper container 13, and the other end side branches to the processing gas supply unit 39 and the inert gas supply unit 40. The supply pipe 41 is connected, and the processing gas and the inert gas are supplied into the upper container 13 from the processing gas supply part 39 and the inert gas supply part 40 through the supply pipe 40.

  The plasma generating device 42 includes a plurality of coils 43 disposed on the outer peripheral portion of the upper container 13 and a second high frequency power source 44 that applies a high frequency voltage to each coil 43. By applying a high frequency voltage to 43, the processing gas and inert gas supplied into the upper container 13 are turned into plasma.

  The first high-frequency power supply 45 applies a high-frequency voltage to the main body 23 of the electrostatic chuck 21 to generate a potential difference (bias potential) between the main body 23 and the plasma in the processing chamber 11.

  Next, a method for etching the glass substrate K using the etching apparatus 1 configured as described above will be described. First, the glass substrate K is carried into the lower container 12 of the processing chamber 11 and placed on the base 22 (the upper surface of the insulating film 25) of the electrostatic chuck 21, and then the first DC power supply 28 and the second DC power supply. 29, DC voltages having different polarities are applied to the first electrode 26 and the second electrode 27, respectively. At this time, since a DC voltage is simply applied to the electrodes 26 and 27, a closed circuit is not formed, and the glass substrate K is not attracted by the electrostatic chuck 21.

  Thereafter, a high frequency voltage is applied to the coil 43 by the second high frequency power supply 44 to supply an inert gas from the inert gas supply unit 40 into the processing chamber 11, and the inside of the processing chamber 11 is decompressed by the exhaust pump 36. Then, the inert gas supplied into the processing chamber 11 is turned into plasma, and the glass substrate K is attracted and held on the electrostatic chuck 21. This includes electrodes 26 and 27 to which a DC voltage is applied as shown in FIG. 2 when a DC voltage is applied to the electrodes 26 and 27 and plasma is generated in the processing chamber 11. An electric circuit in which the electrodes 26 and 27 function as one electrode of the capacitors 26 a and 27 a is formed via the plasma P in the processing chamber 11, whereby charges having different polarities between the glass substrate K and the insulating film 25. Is induced, an adsorption force is generated between the glass substrate K and the insulating film 25, and the glass substrate K is adsorbed and held.

  Next, the cooling gas is supplied from the cooling gas supply unit 32 between the back surface of the glass substrate K attracted and held on the electrostatic chuck 21 and the upper surface of the base 22 to start cooling the glass substrate K. .

  Next, when a predetermined time has elapsed, the supply of the inert gas from the inert gas supply unit 40 into the processing chamber 11 is stopped, and the processing gas is supplied from the processing gas supply unit 39 into the processing chamber 11 to the inside thereof. Is replaced with a processing gas, and a high frequency voltage is applied to the main body 23 by the first high frequency power supply 45. Further, DC voltages having different polarities are respectively applied to the electrodes 26 and 27 by the DC power supplies 28 and 29, a high frequency voltage is applied to the coil 43 by the second high frequency power supply 44, and the inside of the processing chamber 11 is exhausted by the exhaust pump 36. The cooling gas is supplied from the cooling gas supply unit 32 between the back surface of the glass substrate K and the upper surface of the base 22. Then, the processing gas in the processing chamber 11 is turned into plasma, the glass substrate K is adsorbed and held on the electrostatic chuck 21, and the glass substrate K is cooled by the cooling gas, and the temperature of the glass substrate K is increased by the processing gas plasma. The glass substrate K is etched by the plasma processing gas while suppressing the above. Even when the plasma of the processing gas is generated, the glass substrate K is attracted and held on the electrostatic chuck 21 for the same reason as that of the plasma of the inert gas.

  As for the etching of the glass substrate K, for example, radicals in the plasma and a film formed on the glass substrate K chemically react, or ions in the plasma move toward the base 22 side by a bias potential to cause the glass. This is done by colliding with the film on the substrate K, whereby grooves and holes having a predetermined width and depth are formed in the film on the glass substrate K.

  Thereafter, after a certain period of time has elapsed, the operations of the DC power supplies 28, 29, the cooling gas supply unit 32, the exhaust pump 36, and the processing gas supply unit 39 are stopped, and then the glass substrate K is carried out of the lower container 12. To do.

  Thus, according to the etching method of this example, the processing gas is supplied and the inert gas is supplied and turned into plasma before being turned into plasma, so that the glass substrate K is adsorbed and cooled on the electrostatic chuck 21. The glass substrate K can be cooled before actually starting the etching process, and the glass substrate K can be maintained at a constant temperature after the etching process is started or heated by plasma of a processing gas. K can be sufficiently cooled immediately after the start of the etching process. Thereby, the stable etching process can be performed and the etching process can be uniformly and efficiently performed on the entire surface of the glass substrate K. In addition, since the etching process proceeds uniformly, a highly accurate etching shape can be obtained. In addition, since a special electrode structure is used for the electrostatic chuck 21 or a high DC voltage does not have to be applied to the electrodes 26 and 27 of the electrostatic chuck 21, the conventional electrostatic chuck 21 that has been conventionally used is used. By applying as it is, the glass substrate K can be adsorbed and cooled before the etching process is started.

Incidentally, as an example, when the etching method of this example was applied, the SiO ₂ film and the organic film formed on the upper surface of the disk-shaped glass substrate having a diameter of 150 mm and a thickness of 0.3 mm were respectively etched. The etching rate was as shown in FIG. In addition, as shown in FIG. 4, the detection part of an etching rate is one center part (A part) of a glass substrate, and four edge parts (B part, C part, D part, and E part) of a glass substrate. . The etching conditions of the SiO ₂ film are as follows: CHF ₃ gas is supplied into the processing chamber 11 at 100 sccm, the pressure in the processing chamber 11 is reduced to 1 Pa, the coil 43 has a high frequency voltage of 1000 W, and the main body 23 has a high frequency voltage of 300 W. Were respectively applied. The etching conditions for the organic film are as follows: O ₂ gas is supplied into the processing chamber 11 at 100 sccm, the pressure in the processing chamber 11 is reduced to 1 Pa, and a high frequency voltage of 1000 W is applied to the coil 43 and 200 W is applied to the main body 23. Each was applied. Further, before the actual etching of the SiO ₂ film or the organic film, Ar gas is supplied into the processing chamber 11 at 50 sccm, the pressure in the processing chamber 11 is reduced to 1 Pa, and a high-frequency voltage of 500 W is applied to the coil 43. Was applied to adsorb the glass substrate to the electrostatic chuck 21 and cooled. This pre-stage treatment was performed for 10 seconds. Furthermore, helium gas is supplied as a substrate cooling gas so that the pressure is 1 KPa between the back surface of the glass substrate and the upper surface of the base 22 during the etching of the SiO ₂ film and the organic film and in the pre-etching stage. Then, a DC voltage of 6 KV was applied to each of the electrodes 26 and 27.

On the other hand, as a comparative example, after holding and fixing the same substrate as the glass substrate used in the above embodiment by a holding device that presses and clamps the end of the substrate on the substrate mounting table side, the upper surface of the substrate mounting table and the glass When the SiO ₂ film and the organic film were etched while cooling the glass substrate by supplying a cooling gas to the back surface of the substrate, the etching rate was as shown in FIG. The etching rate detection part is the part shown in FIG. 4 as in the above embodiment. Also, the etching conditions for the SiO ₂ film, the etching conditions for the organic film, and the processing conditions before the actual etching of the SiO ₂ film and the organic film are the same as in the above embodiment.

  The same substrate as the glass substrate used in the above embodiment was placed on the electrostatic chuck 21, and a DC voltage was applied to each of the electrodes 26 and 27, and then an inert gas was supplied into the processing chamber 11. When the cooling gas was supplied between the upper surface of the electrostatic chuck 21 and the back surface of the glass substrate without turning into plasma, the glass substrate was detached from the electrostatic chuck 21 and the etching process could not be performed.

When the embodiment and the comparative example are compared, in the embodiment, the range of the etching rate of the SiO ₂ film is 389 to 399 and the difference is 10, and the range of the etching rate of the organic film is 999 to 1048 and the difference is On the other hand, in the comparative example, the range of the etching rate of the SiO ₂ film is 318 to 395 and the difference is 77, and the range of the etching rate of the organic film is 830 to 1072 and the difference is 242. In the example, the etching rate of the SiO ₂ film at the center of the glass substrate is 389, the etching rate of the SiO ₂ film at the end of the glass substrate is 390 to 399, and the etching rate of the organic film at the center of the glass substrate is 1039. In the comparative example, the etching rate of the SiO ₂ film at the center of the glass substrate is 318 and the etching rate of the SiO ₂ film at the end of the glass substrate is 999 to 1048. Is 370 to 395, the etching rate of the organic film at the center of the glass substrate is 830, and the etching rate of the organic film at the edge of the glass substrate is 1004 to 1072. In the example, the average etching rate of the SiO ₂ film is 394 and the average etching rate of the organic film is 1026, whereas in the comparative example, the average etching rate of the SiO ₂ film is 370, The etching rate is 991. From these facts, according to the etching method of this example, it is clear that the variation in the etching rate is small, and the etching rate does not change between the central portion and the end portion of the glass substrate. It can be seen that it is possible to etch at an etch rate and at a faster etch rate. The reason why such a result was obtained is that, in the comparative example, only the edge of the glass substrate is pressed by the holding device, so that the central portion of the glass substrate is raised by the supplied cooling gas. On the other hand, when the glass substrate is deformed in this way, the bias potential at the center becomes weaker than that at the end, and the etching rate decreases. The unit of each etching rate is nm / min.

  As mentioned above, although one Embodiment of this invention was described, the specific aspect which this invention can take is not limited to this at all.

  In the above example, the etching process is given as an example of the plasma process. However, the present invention is not limited to this, and the plasma processing method of the present invention can also be applied to an ashing process or a film forming process. The substrate attracted and held by the electrostatic chuck 21 is not limited to the glass substrate K as long as it is an insulating substrate. In the above example, the bipolar chuck is used as an example of the electrostatic chuck 21. However, the electrostatic chuck 21 may be of a single pole type, and the structure of the electrostatic chuck 21 is not limited at all. . Moreover, the apparatus for implementing the said etching method is not limited to the said etching apparatus 1, Various etching apparatuses can be used.

  Further, the high-frequency voltage applied to the coil 43 during plasma generation of the inert gas may be lower or higher than that during plasma generation of the processing gas as long as the inert gas can be converted into plasma. It should be noted that this is a case where various plasmas are generated by applying a high frequency voltage to the inert gas and the processing gas by applying a high frequency voltage to the pair of parallel plate electrodes to generate a plasma of the inert gas and the processing gas. This is true of the plasma generation apparatus. However, when the plasma of the inert gas is generated, it is preferable that the high frequency voltage to be applied is lower because the glass substrate K on the electrostatic chuck 21 is less likely to be heated.

  In the above example, after applying a DC voltage to the electrodes 26 and 27, an inert gas is supplied into the processing chamber 11 to form plasma, and the glass substrate K is attracted and held on the electrostatic chuck 21. However, the application of the DC voltage to each of the electrodes 26 and 27, the supply of the inert gas, and the plasma generation may be performed simultaneously, or the inert gas supply and plasma generation may be performed first. good.

It is sectional drawing which showed schematic structure of the plasma processing apparatus (etching apparatus) for enforcing the plasma processing method (etching method) which concerns on one Embodiment of this invention. It is explanatory drawing which showed the electric circuit formed through plasma. It is the figure which showed the etching rate obtained in the Example. It is the top view which showed the etching rate detection site | part of the glass substrate surface. It is the figure which showed the etching rate obtained by a comparative example.

Explanation of symbols

1 Etching equipment (plasma processing equipment)
DESCRIPTION OF SYMBOLS 11 Processing chamber 20 Substrate holding device 21 Electrostatic chuck 24, 25 Insulating film 26 1st electrode 27 2nd electrode 28 1st DC power supply 29 2nd DC power supply 30 Cooling mechanism 38 Gas supply apparatus 39 Processing gas supply part 40 Inert gas Supply unit 42 Plasma generator K Glass substrate

Claims (1)

A method of processing an insulating substrate by disposing an insulating substrate in a processing chamber, supplying a processing gas for performing plasma processing in the processing chamber, and converting the plasma into a plasma.
After placing the insulating substrate on the upper surface of the electrostatic chuck disposed in the processing chamber,
A DC voltage is applied to the electrode of the electrostatic chuck, an inert gas that does not contribute to the plasma processing is supplied into the processing chamber, the inert gas is turned into plasma, and the insulating substrate is placed on the electrostatic chuck. Adsorb, hold,
Then, a cooling gas is supplied between the back surface of the insulating substrate attracted and held on the electrostatic chuck and the top surface of the electrostatic chuck to start cooling the insulating substrate.
Next, in place of the inert gas, the processing gas is supplied into the processing chamber to replace the inside with the processing gas, and the processing gas is turned into plasma to continue the insulating substrate on the electrostatic chuck. A plasma processing method characterized in that the insulating substrate is processed while adsorbing and holding and cooling the insulating substrate with the cooling gas.

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