JP2005079556A - Transferring device - Google Patents

Transferring device Download PDF

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JP2005079556A
JP2005079556A JP2003311937A JP2003311937A JP2005079556A JP 2005079556 A JP2005079556 A JP 2005079556A JP 2003311937 A JP2003311937 A JP 2003311937A JP 2003311937 A JP2003311937 A JP 2003311937A JP 2005079556 A JP2005079556 A JP 2005079556A
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transfer
substrate
source substrate
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transfer source
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JP4310685B2 (en
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Sumio Utsunomiya
純夫 宇都宮
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Seiko Epson Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a transferring device that is excellent in mass-productivity by solving the problem of the conventional transferring method that a series of transferring processes, such as lamination, photoirradiation, peeling, etc., must be performed on each substrate. <P>SOLUTION: The transferring device 100 transfers elements 304 from a plurality of original substrates 300 on which the elements 304 are formed through sacrificial layers 302 composed of a material in which the coupling force between atoms falls when the material is irradiated with light to a transferred substrate 112. The transferring device 100 is provided with a transferred substrate transporting means 110 which transports the transferred substrate 112, an adhesion means 160 which adheres the elements 304 formed on the original substrates 300 to the transferred substrate 112, and a light irradiation means 170 which lowers the adhesion between the substrates 112 and 300 by irradiating light upon the sacrificial layers 302 synchronously to the adhering operation of the adhesion means 160. The transferring device 100 is also provided with a peeling means 180 which peels the original substrates 300 from the elements 304 adhered to the transferred substrate 112 synchronously to the light irradiating operation of the light irradiation means 170. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、所定の基板に形成された素子等を、他の基板に転写する転写装置に関する。   The present invention relates to a transfer device that transfers an element or the like formed on a predetermined substrate to another substrate.

従来の転写方法として、特開平10−125931号公報(特許文献1)に開示されたものがある。上記特許文献1に開示された転写方法では、基板に分離層を介して形成された薄膜デバイス層を転写体に接合した後、基板を離脱させることにより薄膜デバイスを転写体に転写している。
特開平10−125931号公報
A conventional transfer method is disclosed in Japanese Patent Laid-Open No. 10-125931 (Patent Document 1). In the transfer method disclosed in Patent Document 1, after a thin film device layer formed on a substrate via a separation layer is bonded to a transfer body, the thin film device is transferred to the transfer body by releasing the substrate.
Japanese Patent Laid-Open No. 10-125931

しかしながら、従来の転写方法では、各基板について、貼り合せ、光照射、剥離等の一連の転写処理をしなければならないため、例えば多数の基板に形成された素子を他の基板に転写する場合に莫大な時間がかかるという問題が生じていた。   However, in the conventional transfer method, a series of transfer processes such as bonding, light irradiation, and peeling are required for each substrate. For example, when transferring elements formed on a large number of substrates to another substrate. There was a problem that it took an enormous amount of time.

よって、本発明は、上記の課題を解決することのできる、量産性に優れた転写装置を提供することを目的とする。この目的は特許請求の範囲における独立項に記載の特徴の組み合わせにより達成される。また従属項は本発明の更なる有利な具体例を規定する。   Therefore, an object of the present invention is to provide a transfer apparatus that can solve the above-described problems and is excellent in mass productivity. This object is achieved by a combination of features described in the independent claims. The dependent claims define further advantageous specific examples of the present invention.

上記課題を解決するため、本発明の第1の形態によれば、光照射により原子間の結合力が低下する材料からなる犠牲層を介して素子が形成された複数の転写元基板から転写先フィルムに当該素子を転写する転写装置であって、前記転写先フィルムを搬送するフィルム搬送手段と、前記転写先フィルムに、前記転写元基板に形成された前記素子を接着する接着手段と、前記接着手段が接着する動作に同期して、前記犠牲層に光を照射することにより、前記素子と前記転写元基板との密着力を低下させる光照射手段と、前記光照射手段が光を照射する動作に同期して、前記転写先フィルムに接着された前記素子から前記転写元基板を剥離する剥離手段と、を備えたことを特徴とする転写装置を提供する。   In order to solve the above-described problems, according to the first aspect of the present invention, a transfer destination is transferred from a plurality of transfer source substrates on which elements are formed through a sacrificial layer made of a material whose bonding force between atoms is reduced by light irradiation. A transfer device for transferring the element to a film, the film transfer means for transferring the transfer destination film, the bonding means for bonding the element formed on the transfer source substrate to the transfer destination film, and the bonding In synchronization with the bonding operation of the means, the light irradiation means for irradiating the sacrificial layer with light to reduce the adhesion between the element and the transfer source substrate, and the light irradiation means for irradiating light And a peeling means for peeling the transfer source substrate from the element bonded to the transfer destination film in synchronism with the transfer destination film.

かかる構成では、転写処理を行う各手段が同期して動作することとなる。したがって、所定の手段が所定の基板に対して所定の処理を行うとともに、他の手段が他の基板に対して他の処理を行うことができるため、転写素子の生産性を飛躍的に向上させることができる。   In such a configuration, each means for performing the transfer process operates in synchronization. Therefore, the predetermined means can perform the predetermined process on the predetermined substrate and the other means can perform the other process on the other substrate, thereby dramatically improving the productivity of the transfer element. be able to.

ここで、素子とは、一定の電気特性をもち、かつ回路をつくるために他の素子と接続する端子をもつ電気部品をいう。素子には、例えばダイオード、トランジスタ、抵抗器、コンデンサ、配線等が含まれる。また、素子は、半導体層、誘電体層、絶縁層等の所定の機能を実現するための薄膜が積層された構造体であることが好ましく、例えば薄膜回路層や微細構造体を含み回路基板としても機能することができる。また素子は、電気光学材料を含むことにより電気光学素子としても機能できる。薄膜回路層としては、TFT(薄膜トランジスタ)や薄膜ダイオードなどの薄膜を用いて構成された機能素子(例えばスイッチング素子)が例示でき、また薄膜回路装置とは、上記薄膜回路層を含んで回路を構成したもので、例えば上記TFTを含むドライバ回路などが例示できる。   Here, the element means an electrical component having a certain electrical characteristic and having a terminal connected to another element in order to form a circuit. Examples of the element include a diode, a transistor, a resistor, a capacitor, and a wiring. The element is preferably a structure in which thin films for realizing a predetermined function such as a semiconductor layer, a dielectric layer, and an insulating layer are stacked. For example, the element includes a thin film circuit layer or a fine structure as a circuit board. Can also work. The element can also function as an electro-optical element by including an electro-optical material. Examples of the thin film circuit layer include functional elements (for example, switching elements) configured by using a thin film such as a TFT (thin film transistor) or a thin film diode, and the thin film circuit device includes a circuit including the thin film circuit layer. For example, a driver circuit including the TFT can be exemplified.

また、前記剥離手段は、前記転写元基板を固定する手段と、固定された前記転写元基板を所定の方向に移動する手段と、前記所定の方向と異なる方向に前記転写先基板を搬送する手段と、を有することが好ましい。   The peeling means includes means for fixing the transfer source substrate, means for moving the fixed transfer source substrate in a predetermined direction, and means for transporting the transfer destination substrate in a direction different from the predetermined direction. It is preferable to have.

かかる構成では、剥離手段が剥離処理を行うときに、転写先基板及び/又は転写元基板は搬送されることとなる。したがって、かかる構成によれば、転写先基板及び転写元基板を搬送するとともに剥離することができるため、転写素子の生産性をさらに向上させることができる。また、転写先基板及び転写元基板を搬送させることにより、転写元基板から素子及び/又は転写先基板を剥離することができるため、きわめて容易に転写素子を生産することができる。   In such a configuration, when the peeling means performs the peeling process, the transfer destination substrate and / or the transfer source substrate are transported. Therefore, according to this configuration, since the transfer destination substrate and the transfer source substrate can be transported and peeled off, the productivity of the transfer element can be further improved. Further, since the element and / or the transfer destination substrate can be peeled from the transfer source substrate by transporting the transfer destination substrate and the transfer source substrate, the transfer element can be produced very easily.

また、当該転写装置は、前記接着手段が接着する動作に同期して、前記転写元基板の表面を処理する表面処理手段をさらに備えもよい。かかる構成では、接着手段が所定の転写元基板に対して接着処理を行うときに、表面処理手段が他の転写元基板に対して表面処理を行うことができる。したがって、転写素子の生産性をさらに向上させることができる。   The transfer apparatus may further include surface treatment means for treating the surface of the transfer source substrate in synchronization with the operation of bonding by the bonding means. In this configuration, when the bonding unit performs the bonding process on the predetermined transfer source substrate, the surface processing unit can perform the surface process on the other transfer source substrate. Therefore, the productivity of the transfer element can be further improved.

また、当該転写装置は、前記剥離手段が剥離する動作に同期して、前記転写元基板から剥離された前記素子を洗浄する洗浄手段をさらに備えてもよい。かかる構成では、剥離手段が所定の転写元基板に対して剥離処理を行うときに、洗浄手段が他の転写元基板から剥離された素子等に対して洗浄処理を行うことができる。したがって、転写素子の生産性をさらに向上させることができる。   In addition, the transfer device may further include a cleaning unit that cleans the element that has been peeled off from the transfer source substrate in synchronization with the peeling operation of the peeling unit. In such a configuration, when the peeling unit performs a peeling process on a predetermined transfer source substrate, the cleaning unit can perform a cleaning process on an element or the like peeled from another transfer source substrate. Therefore, the productivity of the transfer element can be further improved.

また、当該転写装置は、前記転写元基板から剥離された前記素子が接着された前記転写先基板を巻き取る巻取り手段をさらに備えてもよい。かかる構成では、多数の素子が転写された転写先基板が例えばロール状に巻き取られるため、転写処理が行われた転写先基板をコンパクトに収納できる。   The transfer apparatus may further include a winding unit that winds the transfer destination substrate to which the element peeled from the transfer source substrate is bonded. In such a configuration, the transfer destination substrate onto which a large number of elements have been transferred is wound up in a roll shape, for example, so that the transfer destination substrate on which the transfer process has been performed can be stored compactly.

また、当該転写装置は、前記転写元基板から剥離された前記素子が接着された前記転写先基板に、導電性フィルムを貼り合せる手段を貼り合せ手段をさらに備え、前記巻取り手段は、前記導電性フィルムが貼り合わされた前記転写先基板を巻き取ってもよい。   In addition, the transfer device further includes means for attaching a conductive film to the transfer destination substrate to which the element peeled from the transfer source substrate is bonded, and the winding means includes the conductive member. The transfer destination substrate on which the adhesive film is bonded may be wound up.

かかる構成では、転写先基板に転写された素子等に、導電性フィルムが接触又は接近した状態で、転写先基板が巻き取られることとなる。したがって、転写処理により、転写先基板や素子等に静電気が生じる場合であっても、導電性フィルムにより当該静電気を除去することができるため、素子等の静電破壊を防ぐことができる。   In such a configuration, the transfer destination substrate is wound up in a state where the conductive film is in contact with or close to the element or the like transferred to the transfer destination substrate. Accordingly, even when static electricity is generated in the transfer destination substrate, the element, or the like by the transfer process, the static electricity can be removed by the conductive film, so that electrostatic breakdown of the element or the like can be prevented.

また、当該転写装置は、前記転写元基板が前記転写先基板と対向するように、前記転写元基板を搬送する基板搬送手段をさらに備えることが好ましい。かかる構成では、転写元基板と転写先基板が対向してそれぞれ搬送されるため、各手段が転写元基板及び転写先基板に対して行う処理を容易に同期させることができる。   In addition, it is preferable that the transfer device further includes a substrate transport unit that transports the transfer source substrate so that the transfer source substrate faces the transfer destination substrate. In such a configuration, since the transfer source substrate and the transfer destination substrate are transported opposite to each other, the processing performed by each unit on the transfer source substrate and the transfer destination substrate can be easily synchronized.

以下、図面を参照しつつ、発明の実施の形態を通じて本発明を説明するが、以下の実施形態は特許請求の範囲に係る発明を限定するものではなく、また、実施形態の中で説明されている特徴の組み合わせのすべてが発明の解決手段に必須であるとは限らない。   Hereinafter, the present invention will be described through embodiments of the invention with reference to the drawings. However, the following embodiments do not limit the invention according to the claims, and are described in the embodiments. Not all combinations of features are essential for the solution of the invention.

図1は、本発明の一実施形態に係る転写装置100の構成を示す図である。転写装置100は、転写先基板搬送手段110と、転写元基板搬送手段120と、転写元基板表面処理手段130と、保護フィルム剥離手段140と、転写先基板表面処理手段150と、接着手段160と、光照射手段170と、転写元基板剥離手段180と、洗浄手段190と、貼り合せ手段200とを備えて構成される。   FIG. 1 is a diagram showing a configuration of a transfer apparatus 100 according to an embodiment of the present invention. The transfer apparatus 100 includes a transfer destination substrate transport unit 110, a transfer source substrate transport unit 120, a transfer source substrate surface treatment unit 130, a protective film peeling unit 140, a transfer destination substrate surface treatment unit 150, and an adhesion unit 160. The light irradiation means 170, the transfer source substrate peeling means 180, the cleaning means 190, and the bonding means 200 are provided.

転写先基板搬送手段110は、転写先基板112を搬送する。本実施形態において転写先基板搬送手段110は、ロール状に巻き取られた転写先基板112を引き出して搬送する引出手段114と、搬送された転写先基板112を巻き取る巻取り手段116と、転写先基板112の搬送方向を変更する搬送方向変更手段118とを有して構成される。引出手段114、巻取り手段116、及び搬送方向変更手段118は、例えばローラ等の、回転動作により転写先基板112を搬送する手段である。   The transfer destination substrate transport unit 110 transports the transfer destination substrate 112. In this embodiment, the transfer destination substrate transport unit 110 includes a pulling unit 114 that pulls out and transports the transfer destination substrate 112 wound up in a roll shape, a winding unit 116 that winds up the transported transfer destination substrate 112, and a transfer And a transport direction changing unit 118 that changes the transport direction of the front substrate 112. The drawing unit 114, the winding unit 116, and the conveyance direction changing unit 118 are units that convey the transfer destination substrate 112 by a rotation operation such as a roller.

転写先基板112は、例えばプラスチックフィルム等の巻取り可能に形成された薄板材料である。本実施形態において転写先基板112は、素子304が接着する接着面に、当該接着面を保護する保護フィルム142が貼り合わされている。また、本実施形態において転写装置100は、転写先基板112から保護フィルム142を剥離する保護フィルム剥離手段140を有する。保護フィルム剥離手段140は、保護フィルム142の搬送方向を変更する手段144と、保護フィルム142を巻き取る保護フィルム巻取手段146とを有して構成されており、転写先基板112の搬送方向と異なる方向に保護フィルム142を搬送することにより、保護フィルム142を転写先基板112から剥離する。なお、転写先基板112は、接着面に予め接着剤が塗布された基板であってもよい。   The transfer destination substrate 112 is a thin plate material such as a plastic film that can be wound up. In the present embodiment, in the transfer destination substrate 112, a protective film 142 that protects the bonding surface is bonded to the bonding surface to which the element 304 is bonded. In this embodiment, the transfer device 100 includes a protective film peeling unit 140 that peels the protective film 142 from the transfer destination substrate 112. The protective film peeling means 140 includes a means 144 for changing the conveying direction of the protective film 142 and a protective film winding means 146 that winds up the protective film 142, and includes a conveying direction of the transfer destination substrate 112. The protective film 142 is peeled from the transfer destination substrate 112 by conveying the protective film 142 in different directions. The transfer destination substrate 112 may be a substrate in which an adhesive is previously applied to the bonding surface.

転写元基板搬送手段120は、犠牲層302を介して素子304が形成された転写元基板300を搬送する。転写元基板搬送手段120は、転写元基板300を載置する搬送フィルム122と、搬送フィルム122を送出す手段124と、搬送フィルム122を巻き取る手段126と、搬送フィルム122の搬送方向を変更する手段128とを有して構成されている。転写元基板搬送手段120は、搬送フィルム122における転写元基板300が載置される部分において、搬送フィルム122と転写先基板112とが略平行に搬送されるように構成されるのが望ましい。   The transfer source substrate transport unit 120 transports the transfer source substrate 300 on which the element 304 is formed via the sacrificial layer 302. The transfer source substrate transfer unit 120 changes the transfer direction of the transfer film 122, the transfer film 122 for placing the transfer source substrate 300, the means 124 for sending out the transfer film 122, the means 126 for winding up the transfer film 122, and the transfer film 122. Means 128. The transfer source substrate transport unit 120 is preferably configured such that the transport film 122 and the transfer destination substrate 112 are transported substantially in parallel at a portion of the transport film 122 where the transfer source substrate 300 is placed.

本実施形態において転写元基板300上に形成された犠牲層302には接着剤が塗布されており、素子304は当該接着剤を介して犠牲層302上に固定されている。すなわち、本実施形態において素子304は、他の基板上に形成された後、転写元基板300に転写されたものである。当該接着剤は水溶性接着剤であることが好ましい。   In this embodiment, an adhesive is applied to the sacrificial layer 302 formed on the transfer source substrate 300, and the element 304 is fixed on the sacrificial layer 302 via the adhesive. That is, in this embodiment, the element 304 is formed on another substrate and then transferred to the transfer source substrate 300. The adhesive is preferably a water-soluble adhesive.

転写元基板表面処理手段130は、転写元基板300に形成された素子304の表面を処理する。素子304は、表面に複数の素子304に渡って形成された絶縁膜等を含んでもよい。この場合、転写元基板表面処理手段130は、当該絶縁膜等の表面を処理する。   The transfer source substrate surface processing means 130 processes the surface of the element 304 formed on the transfer source substrate 300. The element 304 may include an insulating film or the like formed over the plurality of elements 304 on the surface. In this case, the transfer source substrate surface processing means 130 processes the surface of the insulating film or the like.

具体的には、転写元基板表面処理手段130は、素子304における当該素子304が転写先基板112と接着される面に対して、紫外線(UV)クリーニング、カップリング処理、酸素プラズマ処理、コロナ放電処理等の処理を行う手段であって、当該面に存在する汚染物質等を除去する。本実施形態において転写元基板表面処理手段130は、紫外線を発するUVランプであって、素子304の当該面に紫外線を照射することにより、当該面に存在する汚染物質等を除去する。   Specifically, the transfer source substrate surface processing means 130 applies ultraviolet (UV) cleaning, coupling processing, oxygen plasma processing, corona discharge to the surface of the element 304 where the element 304 is bonded to the transfer destination substrate 112. It is a means for performing processing such as processing, and removes contaminants and the like present on the surface. In this embodiment, the transfer source substrate surface processing means 130 is a UV lamp that emits ultraviolet rays, and removes contaminants and the like present on the surface by irradiating the surface of the element 304 with ultraviolet rays.

転写先基板表面処理手段150は、転写先基板112における保護フィルム142が剥離された面、すなわち、接着面を処理する。本実施形態において転写先基板表面処理手段150は、スプレーコート、ブレードコート等により、接着面に対して接着剤を塗布する。また、転写先基板表面処理手段150は、紫外線(UV)クリーニング、カップリング処理、酸素プラズマ処理、コロナ放電処理等により、当該面に存在する汚染物質等を除去する手段をさらに含んでもよい。また、転写先基板112に予め接着剤が塗布されている場合、転写先基板表面処理手段150は、当該汚染物質等を除去する手段であってもよい。   The transfer destination substrate surface processing means 150 processes the surface of the transfer destination substrate 112 from which the protective film 142 has been peeled, that is, the adhesion surface. In this embodiment, the transfer destination substrate surface processing means 150 applies an adhesive to the adhesive surface by spray coating, blade coating, or the like. The transfer destination substrate surface treatment means 150 may further include means for removing contaminants and the like present on the surface by ultraviolet (UV) cleaning, coupling treatment, oxygen plasma treatment, corona discharge treatment, and the like. Further, when an adhesive is applied to the transfer destination substrate 112 in advance, the transfer destination substrate surface treatment means 150 may be a means for removing the contaminants and the like.

接着手段160は、転写元基板300と転写先基板112とを接着する。具体的には、接着手段160は、転写元基板300に形成された素子304と、転写先基板112における接着面とを貼り合せることにより、転写元基板300と転写先基板112とを接着する。また、接着手段160は、例えば加圧、紫外線照射、加熱等といった転写先基板112の接着面に塗布された接着剤の特性に応じた方法により、転写元基板300と転写先基板112とを接着する。   The bonding unit 160 bonds the transfer source substrate 300 and the transfer destination substrate 112. Specifically, the bonding unit 160 bonds the transfer source substrate 300 and the transfer destination substrate 112 by bonding the element 304 formed on the transfer source substrate 300 and the bonding surface of the transfer destination substrate 112. Further, the bonding unit 160 bonds the transfer source substrate 300 and the transfer destination substrate 112 by a method according to the characteristics of the adhesive applied to the bonding surface of the transfer destination substrate 112 such as pressurization, ultraviolet irradiation, heating, and the like. To do.

本実施形態において接着手段160は、転写先基板112及び転写元基板300を挟んで対向して配置された複数の部材により構成されており、転写先基板112及び転写元基板300のいずれか一方又は双方を、転写先基板112及び/又は転写元基板300の搬送方向に対して略垂直な方向に押圧することにより、転写元基板300と転写先基板112とを接着する。   In the present embodiment, the adhesive unit 160 is configured by a plurality of members disposed to face each other with the transfer destination substrate 112 and the transfer source substrate 300 interposed therebetween, and either the transfer destination substrate 112 or the transfer source substrate 300 or The transfer source substrate 300 and the transfer destination substrate 112 are bonded together by pressing both in a direction substantially perpendicular to the transfer direction of the transfer destination substrate 112 and / or the transfer source substrate 300.

光照射手段170は、犠牲層302に光を照射する。光照射手段170は、例えばエキシマレーザ、紫外線等の光を発するランプや半導体レーザ等である。また、光照射手段170は、転写元基板300を保持する手段をさらに有し、当該手段を介して犠牲層302に光を照射してもよい。この場合、当該手段は光を透過する材料により構成されるのが望ましい。   The light irradiation means 170 irradiates the sacrificial layer 302 with light. The light irradiation means 170 is, for example, an excimer laser, a lamp that emits light such as ultraviolet rays, or a semiconductor laser. Further, the light irradiation means 170 may further include means for holding the transfer source substrate 300, and the sacrificial layer 302 may be irradiated with light through the means. In this case, the means is preferably made of a material that transmits light.

転写元基板剥離手段180は、転写元基板300を転写先基板112から剥離することにより、素子304を転写先基板112に転写する。本実施形態において転写元基板剥離手段180は、転写元基板300を所定の方向に移動させる移動手段182と、転写先基板112を当該所定の方向と異なる方向に搬送する搬送方向変更手段184とを有して構成される。移動手段182は、例えば真空チャック等の転写元基板300を固定する手段を有して構成されている。また、搬送方向変更手段184は、転写先基板112を転写元基板300から離れる方向に搬送する。   The transfer source substrate peeling unit 180 transfers the element 304 to the transfer destination substrate 112 by peeling the transfer source substrate 300 from the transfer destination substrate 112. In this embodiment, the transfer source substrate peeling unit 180 includes a moving unit 182 that moves the transfer source substrate 300 in a predetermined direction, and a transport direction changing unit 184 that transports the transfer destination substrate 112 in a direction different from the predetermined direction. It is configured. The moving means 182 includes a means for fixing the transfer source substrate 300 such as a vacuum chuck. Further, the transport direction changing unit 184 transports the transfer destination substrate 112 in a direction away from the transfer source substrate 300.

洗浄手段190は、転写先基板112に転写された素子304を洗浄する。本実施形態において洗浄手段190は、素子304に対して洗浄液をシャワー状に噴射することにより、素子304及び/又は転写先基板112の表面に付着又は残留した接着剤、犠牲層302、汚染物質等を除去する。また、洗浄手段190は、洗浄した素子304及び転写先基板112を乾燥する手段を有するのが好ましい。   The cleaning unit 190 cleans the element 304 transferred to the transfer destination substrate 112. In the present embodiment, the cleaning unit 190 sprays a cleaning liquid onto the element 304 in a shower shape, thereby adhering or remaining on the surface of the element 304 and / or the transfer destination substrate 112, the sacrificial layer 302, contaminants, and the like. Remove. The cleaning unit 190 preferably includes a unit for drying the cleaned element 304 and the transfer destination substrate 112.

貼り合せ手段200は、転写先基板112に導電性フィルム202を貼り合せる。本実施形態において貼り合せ手段200は、巻き取られた導電性フィルム202を引き出し所定の方向に搬送する引出手段206と、転写先基板112の搬送方向と略同じ方向に導電性フィルム202を搬送することにより、導電性フィルム202を転写先基板112に貼り合せる搬送方向変更手段204とを有して構成される。導電性フィルム202は、例えばアルミニウム、銅等からなる金属フィルム等である。本実施形態において貼り合せ手段200は、転写先基板112における素子304が転写された面と反対の面に導電性フィルム202を貼り合せているが、転写先基板112における素子304が転写された面に貼り合わせてもよい。すなわち、貼り合せ手段200は、素子304を覆うように導電性フィルム202を転写先基板112に貼り合わせてもよい。   The bonding unit 200 bonds the conductive film 202 to the transfer destination substrate 112. In the present embodiment, the laminating unit 200 pulls out the wound conductive film 202 and transports the conductive film 202 in a direction substantially the same as the transport direction of the transfer destination substrate 112. By this, it has the conveyance direction change means 204 which bonds the electroconductive film 202 to the transfer destination board | substrate 112, and is comprised. The conductive film 202 is a metal film made of, for example, aluminum or copper. In this embodiment, the bonding unit 200 bonds the conductive film 202 to the surface of the transfer destination substrate 112 opposite to the surface to which the element 304 is transferred, but the surface of the transfer destination substrate 112 to which the element 304 is transferred. You may stick together. That is, the bonding unit 200 may bond the conductive film 202 to the transfer destination substrate 112 so as to cover the element 304.

図2は、転写装置100の制御系統を示す機能ブロック図である。転写装置100は、図1に示す各手段を制御する制御手段400を備えて構成されている。本実施形態では、各手段は制御手段400により制御されるように構成されているが、各手段毎に当該手段を制御する個別制御手段を設け、制御手段400が各個別制御手段を統括的に制御するように構成してもよい。   FIG. 2 is a functional block diagram illustrating a control system of the transfer apparatus 100. The transfer apparatus 100 includes a control unit 400 that controls each unit illustrated in FIG. In the present embodiment, each means is configured to be controlled by the control means 400, but an individual control means for controlling the means is provided for each means, and the control means 400 controls each individual control means. You may comprise so that it may control.

制御手段400は、転写先基板112が所定の距離移動した後、所定の時間停止するように転写先基板搬送手段110を制御する。すなわち、制御手段400は、転写先基板112が搬送と停止とを繰り返すように転写先基板搬送手段110を制御する。具体的には、制御手段400は、転写先基板112に接着された転写元基板300が光照射手段170及び転写元基板剥離手段180が設けられた位置において当該所定の時間停止するように、転写先基板搬送手段110を制御する。   The control unit 400 controls the transfer destination substrate transport unit 110 to stop for a predetermined time after the transfer destination substrate 112 has moved a predetermined distance. That is, the control unit 400 controls the transfer destination substrate transport unit 110 so that the transfer destination substrate 112 repeats transport and stop. Specifically, the control unit 400 transfers the transfer source substrate 300 bonded to the transfer destination substrate 112 so that the transfer source substrate 300 stops at the position where the light irradiation unit 170 and the transfer source substrate peeling unit 180 are provided for the predetermined time. The front substrate transfer means 110 is controlled.

本実施形態において接着手段160、光照射手段170、及び転写元基板剥離手段180は、当該所定の距離を隔てて設けられている。すなわち、接着手段160、光照射手段170、及び転写元基板剥離手段180は、等間隔に設けられている。また、転写元基板搬送手段120は、複数の転写元基板300を搬送しており、制御手段400は、複数の転写元基板300のうちの所定の転写元基板300が接着手段160の設けられた位置に停止しているときに、他の転写元基板300が光照射手段170及び転写元基板剥離手段180の設けられた位置に停止するように、転写先基板搬送手段110を制御する。   In the present embodiment, the adhesion unit 160, the light irradiation unit 170, and the transfer source substrate peeling unit 180 are provided at a predetermined distance. That is, the bonding unit 160, the light irradiation unit 170, and the transfer source substrate peeling unit 180 are provided at equal intervals. Further, the transfer source substrate transport unit 120 transports a plurality of transfer source substrates 300, and the control unit 400 includes a predetermined transfer source substrate 300 among the plurality of transfer source substrates 300 provided with the bonding unit 160. When stopping at the position, the transfer destination substrate transport unit 110 is controlled so that the other transfer source substrate 300 stops at the position where the light irradiation unit 170 and the transfer source substrate peeling unit 180 are provided.

また、制御手段400は、転写先基板112の搬送に合わせて転写元基板300が搬送されるように、転写元基板搬送手段120を制御する。具体的には、制御手段400は、転写先基板112において所定の転写元基板300を接着すべき領域が接着手段160の設けられた位置に搬送されたときに、当該所定の転写元基板300が当該位置に搬送されるように転写元基板搬送手段120を制御する。制御手段400は、転写先基板搬送手段110の搬送動作に同期して、転写元基板搬送手段120の搬送動作を制御してもよい。   The control unit 400 controls the transfer source substrate transport unit 120 so that the transfer source substrate 300 is transported in accordance with the transport of the transfer destination substrate 112. Specifically, the control unit 400 moves the predetermined transfer source substrate 300 when the region to which the predetermined transfer source substrate 300 is to be bonded is transferred to the position where the bonding unit 160 is provided. The transfer source substrate transport unit 120 is controlled so as to be transported to the position. The control unit 400 may control the transfer operation of the transfer source substrate transfer unit 120 in synchronization with the transfer operation of the transfer destination substrate transfer unit 110.

また、制御手段400は、転写先基板搬送手段110の搬送動作に同期して、保護フィルム剥離手段140及び貼り合せ手段200の動作を制御する。すなわち、制御手段400は、転写先基板112の搬送に合わせて、保護フィルム142を転写先基板112から剥離し、転写先基板112に導電性フィルム202を貼り合せるように、保護フィルム剥離手段140及び貼り合せ手段200を制御する。   The control unit 400 controls the operations of the protective film peeling unit 140 and the bonding unit 200 in synchronization with the transfer operation of the transfer destination substrate transfer unit 110. That is, the control unit 400 peels off the protective film 142 from the transfer destination substrate 112 in accordance with the transfer of the transfer destination substrate 112, and attaches the conductive film 202 to the transfer destination substrate 112. The bonding means 200 is controlled.

また、制御手段400は、転写先基板搬送手段110及び/又は転写元基板搬送手段120の搬送動作に同期して、転写元基板表面処理手段130、転写先基板表面処理手段150、接着手段160、光照射手段170、及び洗浄手段190の動作を制御する。具体的には、本実施形態において制御手段400は、転写先基板112及び転写元基板300が搬送と停止を繰り返すように転写先基板搬送手段110及び転写元基板搬送手段120を制御しているが、制御手段400は、転写先基板112及び/又は転写元基板300が停止しているときに、転写元基板表面処理手段130、転写先基板表面処理手段150、接着手段160、光照射手段170、及び洗浄手段190が動作するように当該各手段を制御する。   Further, the control unit 400 synchronizes with the transfer operation of the transfer destination substrate transfer unit 110 and / or the transfer source substrate transfer unit 120, the transfer source substrate surface processing unit 130, the transfer destination substrate surface processing unit 150, the bonding unit 160, The operations of the light irradiation means 170 and the cleaning means 190 are controlled. Specifically, in the present embodiment, the control unit 400 controls the transfer destination substrate transport unit 110 and the transfer source substrate transport unit 120 so that the transfer destination substrate 112 and the transfer source substrate 300 repeat transport and stop. The control unit 400 is configured such that when the transfer destination substrate 112 and / or the transfer source substrate 300 are stopped, the transfer source substrate surface processing unit 130, the transfer destination substrate surface processing unit 150, the adhesion unit 160, the light irradiation unit 170, And each means is controlled so that the cleaning means 190 operates.

制御手段400は、転写先基板搬送手段110及び/又は転写元基板搬送手段120、転写元基板表面処理手段130、転写先基板表面処理手段150、接着手段160、光照射手段170、並びに洗浄手段190の動作に同期して、転写元基板剥離手段180の動作を制御する。具体的には、制御手段400は、転写先基板搬送手段110が転写先基板112の搬送を停止しているときに移動手段182が転写元基板300を固定するように、転写元基板剥離手段180を制御する。そして、制御手段400は、転写先基板搬送手段110が転写先基板112を搬送するときに、その搬送動作に合わせて移動手段182が転写元基板300を移動するように、転写元基板剥離手段180を制御する。   The control unit 400 includes a transfer destination substrate transport unit 110 and / or a transfer source substrate transport unit 120, a transfer source substrate surface treatment unit 130, a transfer destination substrate surface treatment unit 150, an adhesion unit 160, a light irradiation unit 170, and a cleaning unit 190. In synchronization with this operation, the operation of the transfer source substrate peeling means 180 is controlled. Specifically, the control unit 400 transfers the transfer source substrate peeling unit 180 so that the moving unit 182 fixes the transfer source substrate 300 when the transfer destination substrate transfer unit 110 stops transferring the transfer destination substrate 112. To control. Then, when the transfer destination substrate transport unit 110 transports the transfer destination substrate 112, the control unit 400 transfers the transfer source substrate peeling unit 180 so that the moving unit 182 moves the transfer source substrate 300 in accordance with the transport operation. To control.

図1及び図2を参照して、転写装置100が転写元基板300に形成された素子304を転写先基板112に転写する動作について説明する。以下において、複数の転写元基板300を、転写先基板112に順次転写していく動作を例に説明する。   With reference to FIGS. 1 and 2, the operation of the transfer apparatus 100 transferring the element 304 formed on the transfer source substrate 300 to the transfer destination substrate 112 will be described. Hereinafter, an operation of sequentially transferring a plurality of transfer source substrates 300 to the transfer destination substrate 112 will be described as an example.

まず、転写先基板搬送手段110を構成する引出手段114が、転写先基板112を引き出す。保護フィルム剥離手段140は、転写先基板112の搬送に合わせて、引き出された転写先基板112に貼り合わされた保護フィルム142を剥離する。続いて、転写先基板表面処理手段150は、転写先基板112における、保護フィルム142が剥離された面、すなわち、転写先基板112における素子304が転写される転写面に、接着剤を塗布する。   First, the drawing unit 114 constituting the transfer destination substrate transport unit 110 pulls out the transfer destination substrate 112. The protective film peeling means 140 peels off the protective film 142 attached to the drawn transfer destination substrate 112 in accordance with the transfer of the transfer destination substrate 112. Subsequently, the transfer destination substrate surface processing means 150 applies an adhesive to the surface of the transfer destination substrate 112 from which the protective film 142 has been peeled, that is, the transfer surface of the transfer destination substrate 112 onto which the element 304 is transferred.

一方、転写先基板搬送手段110の搬送動作に合わせて、まず、第1の転写元基板300が投入される。投入された第1の転写元基板300は、搬送フィルム122に載置され、転写元基板表面処理手段130が設けられた位置に搬送される。このとき、転写先基板112は、転写元基板搬送手段120が第1の転写元基板300を搬送する動作に同期して、搬送されるのが好ましい。すなわち、転写先基板搬送手段110は、第1の転写元基板300の搬送に合わせて転写先基板112を搬送する。そして、第1の転写元基板300は、転写元基板表面処理手段130が設けられた位置において停止し、第1の転写元基板300が停止している間、転写先基板搬送手段110は転写先基板112の搬送を停止する。   On the other hand, in accordance with the transfer operation of the transfer destination substrate transfer unit 110, first, the first transfer source substrate 300 is loaded. The input first transfer source substrate 300 is placed on the transport film 122 and transported to a position where the transfer source substrate surface processing means 130 is provided. At this time, it is preferable that the transfer destination substrate 112 is transferred in synchronization with an operation in which the transfer source substrate transfer unit 120 transfers the first transfer source substrate 300. That is, the transfer destination substrate transport unit 110 transports the transfer destination substrate 112 in accordance with the transport of the first transfer source substrate 300. Then, the first transfer source substrate 300 stops at the position where the transfer source substrate surface processing unit 130 is provided, and the transfer destination substrate transport unit 110 is transferred to the transfer destination while the first transfer source substrate 300 is stopped. The conveyance of the substrate 112 is stopped.

次に、転写元基板表面処理手段130が、第1の転写元基板300の表面を処理する。本実施形態では、転写元基板表面処理手段130が第1の転写元基板300の表面を処理している間、転写先基板搬送手段110は第1の転写元基板300の搬送を停止しており、転写先基板搬送手段110は、転写先基板112の搬送を停止する。   Next, the transfer source substrate surface processing unit 130 processes the surface of the first transfer source substrate 300. In this embodiment, while the transfer source substrate surface processing unit 130 is processing the surface of the first transfer source substrate 300, the transfer destination substrate transfer unit 110 stops the transfer of the first transfer source substrate 300. Then, the transfer destination substrate transport unit 110 stops the transport of the transfer destination substrate 112.

次に、転写元基板搬送手段120は、表面処理がされた第1の転写元基板300を、接着手段160が設けられた位置まで搬送する。このとき、第2の転写元基板300が投入されて、転写元基板搬送手段120は、第1の転写元基板300を接着手段が設けられた位置まで搬送するとともに、第2の転写元基板300を転写元基板表面処理手段130が設けられた位置まで搬送した後、搬送を停止する。   Next, the transfer source substrate transport unit 120 transports the first transfer source substrate 300 subjected to the surface treatment to a position where the bonding unit 160 is provided. At this time, the second transfer source substrate 300 is loaded, and the transfer source substrate transport unit 120 transports the first transfer source substrate 300 to the position where the bonding unit is provided, and the second transfer source substrate 300. Is transferred to a position where the transfer source substrate surface processing means 130 is provided, and then the transfer is stopped.

また、転写先基板搬送手段110は、転写元基板搬送手段120が第1の転写元基板300及び第2の転写元基板300を搬送する動作に同期して、転写先基板112を搬送する。このとき、転写先基板搬送手段110は、第1の転写元基板300が停止したときに、転写先基板112において接着剤が塗布された領域が第1の転写元基板300に対向するように転写先基板112を搬送する。例えば、転写元基板表面処理手段130から接着手段160までの転写元基板300の搬送距離と、転写先基板表面処理手段150から接着手段160までの転写先基板112の搬送距離とが略等しくなるように転写装置100を構成し、転写先基板搬送手段110及び転写元基板搬送手段120は、転写先基板112及び転写元基板300をそれぞれ略同じ速度で搬送する。   In addition, the transfer destination substrate transport unit 110 transports the transfer destination substrate 112 in synchronization with the operation of the transfer source substrate transport unit 120 transporting the first transfer source substrate 300 and the second transfer source substrate 300. At this time, when the first transfer source substrate 300 stops, the transfer destination substrate transport unit 110 transfers the transfer destination substrate 112 so that the region where the adhesive is applied faces the first transfer source substrate 300. The front substrate 112 is transferred. For example, the transfer distance of the transfer source substrate 300 from the transfer source substrate surface processing means 130 to the bonding means 160 is substantially equal to the transfer distance of the transfer destination substrate 112 from the transfer destination substrate surface processing means 150 to the bonding means 160. The transfer destination substrate transport unit 110 and the transfer source substrate transport unit 120 transport the transfer destination substrate 112 and the transfer source substrate 300 at substantially the same speed, respectively.

次に、接着手段160が第1の転写元基板300と転写先基板112を接着するとともに、転写元基板表面処理手段130が第2の転写元基板300の表面を処理する。本実施形態では、接着手段160が第1の転写元基板300を転写先基板112に接着した後、第1の転写元基板300は、搬送フィルム112から離れ、転写先基板112に接着された状態で保持される。   Next, the bonding unit 160 bonds the first transfer source substrate 300 and the transfer destination substrate 112, and the transfer source substrate surface processing unit 130 processes the surface of the second transfer source substrate 300. In the present embodiment, after the bonding unit 160 bonds the first transfer source substrate 300 to the transfer destination substrate 112, the first transfer source substrate 300 is separated from the transport film 112 and bonded to the transfer destination substrate 112. Held in.

次に、転写元基板搬送手段120は、表面処理がされた第2の転写元基板300を、接着手段160が設けられた位置まで搬送する。このとき、第3の転写元基板300が投入され、転写元基板搬送手段120は、第2の転写元基板300を接着手段が設けられた位置まで搬送するとともに、第3の転写元基板300を転写元基板表面処理手段130が設けられた位置まで搬送した後、搬送を停止する。   Next, the transfer source substrate transport unit 120 transports the second transfer source substrate 300 subjected to the surface treatment to a position where the bonding unit 160 is provided. At this time, the third transfer source substrate 300 is loaded, and the transfer source substrate transport unit 120 transports the second transfer source substrate 300 to the position where the bonding unit is provided, and also transfers the third transfer source substrate 300. After transporting to the position where the transfer source substrate surface processing means 130 is provided, the transport is stopped.

また、転写先基板搬送手段110は、転写元基板搬送手段120が第2の転写元基板300及び第3の転写元基板300を搬送する動作に同期して、転写先基板112を搬送する。すなわち、転写先基板搬送手段110は、転写元基板搬送手段120の搬送動作に同期して、転写先基板112に接着された第1の転写元基板300を搬送する。また、転写先基板搬送手段110は、第2の転写元基板300および第3の転写元基板300が停止したときに、第1の転写元基板300が光照射手段170の設けられた位置に停止するように転写先基板112を搬送する。また、転写先基板搬送手段110は、転写先基板112において接着剤が塗布された領域が第2の転写元基板300に対向するように転写先基板112を搬送する。   In addition, the transfer destination substrate transport unit 110 transports the transfer destination substrate 112 in synchronization with the operation of the transfer source substrate transport unit 120 transporting the second transfer source substrate 300 and the third transfer source substrate 300. That is, the transfer destination substrate transport unit 110 transports the first transfer source substrate 300 bonded to the transfer destination substrate 112 in synchronization with the transport operation of the transfer source substrate transport unit 120. Further, when the second transfer source substrate 300 and the third transfer source substrate 300 stop, the transfer destination substrate transport unit 110 stops at the position where the light irradiation unit 170 is provided. Then, the transfer destination substrate 112 is conveyed. In addition, the transfer destination substrate transport unit 110 transports the transfer destination substrate 112 so that the region where the adhesive is applied on the transfer destination substrate 112 faces the second transfer source substrate 300.

次に、光照射手段170が、第1の転写元基板300に形成された犠牲層302に光を照射するとともに、接着手段160が第2の転写元基板300と転写先基板112を接着し、また、転写元基板表面処理手段130が第3の転写元基板300の表面を処理する。これにより、犠牲層302は素子304及び/又は転写元基板300から容易に剥離できるようになる。   Next, the light irradiation means 170 irradiates the sacrificial layer 302 formed on the first transfer source substrate 300 with light, and the bonding means 160 bonds the second transfer source substrate 300 and the transfer destination substrate 112, The transfer source substrate surface processing unit 130 processes the surface of the third transfer source substrate 300. Accordingly, the sacrificial layer 302 can be easily peeled from the element 304 and / or the transfer source substrate 300.

次に、転写元基板搬送手段120は、表面処理がされた第3の転写元基板300を、接着手段160が設けられた位置まで搬送する。このとき、第4の転写元基板300が投入され、転写元基板搬送手段120は、第3の転写元基板300を接着手段が設けられた位置まで搬送するとともに、第4の転写元基板300を転写元基板表面処理手段130が設けられた位置まで搬送した後、搬送を停止する。   Next, the transfer source substrate transport unit 120 transports the third transfer source substrate 300 subjected to the surface treatment to a position where the bonding unit 160 is provided. At this time, the fourth transfer source substrate 300 is loaded, and the transfer source substrate transporting unit 120 transports the third transfer source substrate 300 to the position where the bonding unit is provided, and also transfers the fourth transfer source substrate 300. After transporting to the position where the transfer source substrate surface processing means 130 is provided, the transport is stopped.

また、転写先基板搬送手段110は、転写元基板搬送手段120が第3の転写元基板300及び第4の転写元基板300を搬送する動作に同期して、転写先基板112を搬送する。すなわち、転写先基板搬送手段110は、転写元基板搬送手段120の搬送動作に同期して、転写先基板112に接着された第1の転写元基板300及び第2の転写元基板300を搬送する。また、転写先基板搬送手段110は、第3の転写元基板300および第4の転写元基板300が停止したときに、第1の転写元基板300が移動手段182の設けられた位置に停止し、また、第2の転写元基板300が光照射手段170の設けられた位置に停止するように転写先基板112を搬送する。また、転写先基板搬送手段110は、転写先基板112において接着剤が塗布された領域が第3の転写元基板300に対向するように転写先基板112を搬送する。   In addition, the transfer destination substrate transport unit 110 transports the transfer destination substrate 112 in synchronization with the operation of the transfer source substrate transport unit 120 transporting the third transfer source substrate 300 and the fourth transfer source substrate 300. That is, the transfer destination substrate transport unit 110 transports the first transfer source substrate 300 and the second transfer source substrate 300 bonded to the transfer destination substrate 112 in synchronization with the transport operation of the transfer source substrate transport unit 120. . Further, when the third transfer source substrate 300 and the fourth transfer source substrate 300 are stopped, the transfer destination substrate transport unit 110 stops the first transfer source substrate 300 at the position where the moving unit 182 is provided. Further, the transfer destination substrate 112 is transported so that the second transfer source substrate 300 stops at the position where the light irradiation means 170 is provided. Further, the transfer destination substrate transport unit 110 transports the transfer destination substrate 112 so that the region where the adhesive is applied on the transfer destination substrate 112 faces the third transfer source substrate 300.

以下、第1の転写元基板300に続いて投入された転写元基板300については、第1の転写元基板300と同様に搬送され、また処理されるため、第1の転写元基板300の処理についてのみ説明する。   Hereinafter, since the transfer source substrate 300 introduced after the first transfer source substrate 300 is transported and processed in the same manner as the first transfer source substrate 300, the processing of the first transfer source substrate 300 is performed. Only will be described.

第1の転写元基板300は、転写元剥離手段180が設けられた位置において停止され、移動手段182は、停止した第1の転写元基板300を固定する。このとき、第1の転写元基板300に続いて投入された他の転写元基板300は、第1の転写元基板300と同様に搬送及び処理される。   The first transfer source substrate 300 is stopped at a position where the transfer source peeling unit 180 is provided, and the moving unit 182 fixes the stopped first transfer source substrate 300. At this time, the other transfer source substrate 300 introduced after the first transfer source substrate 300 is transported and processed in the same manner as the first transfer source substrate 300.

そして、転写先基板搬送手段110が転写先基板112を搬送する動作に同期して、移動手段182は、第1の転写元基板300を、転写先基板112の搬送方向と略平行な方向に移動する。そして、搬送方向変更手段184により、転写先基板112の搬送方向が、移動手段182の移動方向と異なる方向に変更される。具体的には、転写先基板112の搬送方向が、転写先基板112及び素子304が、転写元基板300から離れる方向に変更される。そして、転写先基板112及び転写元基板300が、互いに異なる方向にさらに搬送されることにより、転写元基板300から素子304が剥離される。   Then, in synchronization with the transfer destination substrate transport unit 110 transporting the transfer destination substrate 112, the moving unit 182 moves the first transfer source substrate 300 in a direction substantially parallel to the transport direction of the transfer destination substrate 112. To do. Then, the transport direction changing unit 184 changes the transport direction of the transfer destination substrate 112 to a direction different from the moving direction of the moving unit 182. Specifically, the transfer direction of the transfer destination substrate 112 is changed to a direction in which the transfer destination substrate 112 and the element 304 are separated from the transfer source substrate 300. Then, the transfer destination substrate 112 and the transfer source substrate 300 are further transported in different directions, whereby the element 304 is peeled from the transfer source substrate 300.

次に、転写先基板搬送手段112は、剥離された素子304を洗浄手段190が設けられた位置まで搬送した後、搬送を停止する。そして、洗浄手段190は、素子304及び/又は転写先基板112の表面を洗浄する。素子304等が洗浄された後、転写先基板搬送手段110は、転写先基板112をさらに搬送する。そして、この搬送動作に同期して、貼り合せ手段200は、転写先基板112における素子304が接着された面と反対の面に、導電性フィルム202を貼り合せる。そして、転写先基板搬送手段110が転写先基板112及び貼り合わされた導電性フィルム202を搬送するとともに、巻取り手段116は、素子304が転写された転写先基板112を巻き取る。   Next, the transfer destination substrate transport unit 112 transports the peeled element 304 to the position where the cleaning unit 190 is provided, and then stops the transport. The cleaning unit 190 cleans the surface of the element 304 and / or the transfer destination substrate 112. After the elements 304 and the like are cleaned, the transfer destination substrate transport unit 110 further transports the transfer destination substrate 112. In synchronism with this transport operation, the bonding unit 200 bonds the conductive film 202 to the surface of the transfer destination substrate 112 opposite to the surface to which the element 304 is bonded. The transfer destination substrate transport unit 110 transports the transfer destination substrate 112 and the bonded conductive film 202, and the winding unit 116 winds the transfer destination substrate 112 to which the element 304 has been transferred.

本実施形態において転写装置100は、いわゆるロールトゥロール方式により素子304を転写先基板112に転写する装置であるが、いわゆるロールトゥシート方式により素子304を転写先基板112に転写する装置であってもよい。   In this embodiment, the transfer device 100 is a device that transfers the element 304 to the transfer destination substrate 112 by a so-called roll-to-roll method, but is a device that transfers the element 304 to the transfer destination substrate 112 by a so-called roll-to-sheet method. Also good.

本実施形態によれば、素子304を転写先基板112に転写するための各手段において、タクトタイムを合わせて当該各手段を動作させているため、効率よく素子304を転写先基板112に転写することができる。   According to the present embodiment, in each means for transferring the element 304 to the transfer destination substrate 112, the respective means are operated in synchronism with the tact time, so that the element 304 is efficiently transferred to the transfer destination substrate 112. be able to.

上記発明の実施の形態を通じて説明された実施例や応用例は、用途に応じて適宜に組み合わせて、又は変更若しくは改良を加えて用いることができ、本発明は上述した実施形態の記載に限定されるものではない。そのような組み合わせ又は変更若しくは改良を加えた形態も本発明の技術的範囲に含まれ得ることが、特許請求の範囲の記載から明らかである。   The examples and application examples described through the embodiments of the present invention can be used in appropriate combination according to the application, or can be used with modifications or improvements, and the present invention is limited to the description of the above-described embodiments. It is not something. It is apparent from the description of the scope of claims that the embodiments added with such combinations or changes or improvements can be included in the technical scope of the present invention.

本発明の一実施形態に係る転写装置100の構成を示す図である。1 is a diagram illustrating a configuration of a transfer apparatus 100 according to an embodiment of the present invention. 転写装置100の制御系統を示す機能ブロック図である。3 is a functional block diagram showing a control system of the transfer apparatus 100. FIG.

符号の説明Explanation of symbols

100・・・転写装置、110・・・転写先基板搬送手段、112・・・転写先基板、114・・・引出手段、118・・・搬送方向変更手段、120・・・転写元基板搬送手段、122・・・搬送フィルム、130・・・転写元基板表面処理手段、140・・・保護フィルム剥離手段、142・・・保護フィルム、146・・・保護フィルム巻取手段、150・・・転写先基板表面処理手段、160・・・接着手段、170・・・光照射手段、180・・・転写元基板剥離手段、182・・・移動手段、184・・・搬送方向変更手段、190・・・洗浄手段、202・・・導電性フィルム、206・・・引出手段、300・・・転写元基板、302・・・犠牲層、304・・・素子、400・・・制御手段

DESCRIPTION OF SYMBOLS 100 ... Transfer apparatus, 110 ... Transfer destination board | substrate conveyance means, 112 ... Transfer destination board | substrate, 114 ... Pull-out means, 118 ... Conveyance direction change means, 120 ... Transfer source board | substrate conveyance means , 122 ... Conveying film, 130 ... Transfer source substrate surface treatment means, 140 ... Protective film peeling means, 142 ... Protective film, 146 ... Protective film winding means, 150 ... Transfer Pre-substrate surface treatment means, 160 ... Adhesion means, 170 ... Light irradiation means, 180 ... Transfer source substrate peeling means, 182 ... Movement means, 184 ... Conveyance direction change means, 190 ... Washing means 202 ... conductive film 206 ... drawing means 300 ... transfer source substrate 302 ... sacrificial layer 304 ... element 400 ... control means

Claims (7)

犠牲層を介して素子が形成された複数の転写元基板から転写先基板に当該素子を転写する転写装置であって、
前記転写先基板を搬送する転写先基板搬送手段と、
前記転写先基板に、前記転写元基板に形成された前記素子を接着する接着手段と、
前記接着手段が接着する動作に同期して、前記犠牲層に光を照射することにより、前記転写先基板と前記転写元基板との密着力を低下させる光照射手段と、
前記光照射手段が光を照射する動作に同期して、前記転写先基板に接着された前記素子から前記転写元基板を剥離する剥離手段と、
を備えたことを特徴とする転写装置。
A transfer apparatus for transferring an element from a plurality of transfer source substrates on which elements are formed via a sacrificial layer to a transfer destination substrate,
A transfer destination substrate transfer means for transferring the transfer destination substrate;
Adhering means for adhering the element formed on the transfer source substrate to the transfer destination substrate;
Light irradiation means for reducing the adhesion between the transfer destination substrate and the transfer source substrate by irradiating the sacrificial layer with light in synchronism with the operation of the bonding means bonding;
A peeling means for peeling the transfer source substrate from the element bonded to the transfer destination substrate in synchronization with the operation of the light irradiation means irradiating light,
A transfer device comprising:
前記剥離手段は、
前記転写元基板を固定する手段と、
固定された前記転写元基板を所定の方向に移動する手段と、
前記所定の方向と異なる方向に前記転写先基板を搬送する手段と、
を有することを特徴とする請求項1に記載の転写装置。
The peeling means includes
Means for fixing the transfer source substrate;
Means for moving the fixed transfer source substrate in a predetermined direction;
Means for transporting the transfer destination substrate in a direction different from the predetermined direction;
The transfer device according to claim 1, comprising:
前記接着手段が接着する動作に同期して、前記転写元基板の表面を処理する表面処理手段をさらに備えたことを特徴とする請求項1に記載の転写装置。 The transfer apparatus according to claim 1, further comprising a surface processing unit that processes a surface of the transfer source substrate in synchronization with an operation of bonding the bonding unit. 前記剥離手段が剥離する動作に同期して、前記転写元基板から剥離された前記素子を洗浄する洗浄手段をさらに備えたことを特徴とする請求項1に記載の転写装置。 The transfer apparatus according to claim 1, further comprising a cleaning unit that cleans the element peeled off from the transfer source substrate in synchronization with an operation of the peeling unit peeling. 前記転写元基板から剥離された前記素子が接着された前記転写先基板を巻き取る巻取り手段をさらに備えたことを特徴とする請求項1に記載の転写装置。 The transfer apparatus according to claim 1, further comprising a winding unit that winds up the transfer destination substrate to which the element peeled from the transfer source substrate is bonded. 前記転写元基板から剥離された前記素子が接着された前記転写先基板に、導電性フィルムを貼り合せる手段を貼り合せ手段をさらに備え、
前記巻取り手段は、前記導電性フィルムが貼り合わされた前記転写先基板を巻き取ることを特徴とすることを特徴とする請求項5に記載の転写装置。
A means for bonding a conductive film to the transfer destination substrate to which the element peeled from the transfer source substrate is bonded;
The transfer apparatus according to claim 5, wherein the winding unit winds the transfer destination substrate on which the conductive film is bonded.
前記転写元基板が前記転写先基板と対向するように、前記転写元基板を搬送する転写元基板搬送手段をさらに備えたことを特徴とする請求項1に記載の転写装置。


The transfer apparatus according to claim 1, further comprising transfer source substrate transport means for transporting the transfer source substrate so that the transfer source substrate faces the transfer destination substrate.


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