JP2017188204A - Thin substrate, manufacturing method of the same, and substrate peeling method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technique for easily peeling a substrate on which an electronic element is formed and a transfer substrate for transporting the substrate.SOLUTION: The method of manufacturing a substrate on which an electronic element is formed, includes steps of: forming a bonding of a substrate on which an electronic element is formed and a transfer substrate for transporting the substrate with an inorganic material or an organic material; and peeling the substrate on which an electronic element is formed and the transfer substrate for transporting the substrate.SELECTED DRAWING: Figure 6

Description

  The present invention relates to a thin substrate, a manufacturing method thereof, and a substrate peeling method.

  An organic electroluminescence element (organic EL element) using organic electroluminescence (organic EL) is formed by a planar light emitting layer made of an organic compound formed on a transparent substrate, and practical application to a thin display or the like is advanced. is made of. An organic EL display using an organic EL element has a large viewing angle, low power consumption, and flexibility that can be bent as compared with a liquid crystal display, and thus has high commercial utility value. In addition, as a manufacturing method using a thin substrate (1 μm thick Si wafer), process development is also performed in the three-dimensional mounting field of ICs and the MEMS field.

  However, since a thin substrate is generally about 0.5 μm to 0.2 mm in thickness, and the substrate size may be a chip size from a small size, from 4 inch square to a size larger than 1 m square, a device It is difficult to transport a thin substrate at the time of manufacture by a robot or the like.

  Therefore, a method is conceivable in which a glass substrate, film, or wafer having a thickness of 0.1 mm to 1.1 mm is used as a transfer substrate, and the above thin substrate is attached to the surface of the transfer substrate and transferred. This method has the advantage that the substrate thickness can be transferred using existing equipment as it is. However, the transfer substrate must be peeled off from the transfer substrate after the device is completed.

  There are three types of thin substrates. One is a thin glass and the other is a heat resistant film represented by polyimide. The third is a wafer. In some cases, the wafer is protected by a tape with an adhesive. In this case, the substrate is a laminate of a wafer and a film.

  A currently proposed transfer method uses glass or a wafer as a transfer carrier. In the case of thin glass, the carrier glass surface is kept clean from the property of being glass-to-glass, and it is a method of joining by directly attaching. In the case of a heat resistant film, a film in which a destruction phenomenon is caused by laser irradiation is formed between the conveying glass and the film, and after being bonded, the film is peeled off by laser irradiation. When the thin substrate is a wafer, a non-contact transfer method or a special chuck method has been proposed, but there is a limit to the thickness that can be transferred. It is an area that can be around 100 μm, and there is no conveying method at a thickness of 1 μm or the like.

  In this case, a method using a transfer substrate can be considered. There is no good peeling method. In the case of a wafer, polishing may be used to make it thin. In this case, an adhesive tape is applied to the wafer to prevent cracking and cracking after polishing. In this case, it has been proposed to use glass as a carrier.

  For example, in a display, a thin substrate has a step of heating to about 300 ° C. to 500 ° C. in a TFT formation process. Further, in a semiconductor process such as a wafer, there is a step of heating to 800 ° C. or higher in an annealing step. Since the process is heated, there is no effective method for peeling the thin substrate from the bonded transport substrate.

  When the thin substrate is glass and the transport substrate is also glass, the adhesion between the glasses is strong, and there is a problem that the ultra-thin glass is chipped at the time of peeling. When a conveyance board | substrate is glass and a thin substrate is a film, the method of putting a specific film | membrane between conveyance glass and a film and irradiating with a laser from the glass side after panel completion and peeling is tried. However, since laser irradiation is performed by a scanning method, it takes time. There is also a problem that the film is damaged by laser irradiation. In addition, there is a process of applying an adhesive tape that can be peeled off by ultraviolet rays to the wafer, and then polishing to make the wafer thinner. In this case, carrier glass may be required as a support substrate. In this case as well, there is a demand for an easy peeling method between the tape and glass after polishing without peeling by the polishing pressure.

  The present invention has been made in view of the above-described problems of the prior art, and in the transport method in the manufacturing process of a thin substrate, the substrate (glass, film or wafer) is bonded to the transport substrate, and easily. Provide technology that can be peeled.

  According to the present invention, there is provided a method of manufacturing a substrate on which an electronic element is formed on the surface, from the bonding surface of the substrate on which the electronic element is formed on the surface and the transport substrate for transporting the substrate to the surface. There is provided a manufacturing method comprising a step of peeling a substrate on which an element is formed and a transport substrate for transporting the substrate.

  According to one embodiment of the present invention, in the above manufacturing method, an inorganic material or an organic material is used for bonding a substrate on which an electronic element is formed on a surface and a transport substrate for transporting the substrate.

  According to one aspect of the present invention, in the manufacturing method described above, mechanical separation of a blade, a piano wire, a teg, or the like is performed on a bonding surface between a substrate on which an electronic element is formed and a transfer substrate for transferring the substrate. It has an insertion mechanism for creating a trigger.

  According to one aspect of the present invention, in the manufacturing method described above, mechanical separation of a blade, a piano wire, a teg, or the like is performed on a bonding surface between a substrate on which an electronic element is formed and a transfer substrate for transferring the substrate. It has an insertion mechanism and a mechanical peeling mechanism for creating the trigger.

  According to one aspect of the present invention, the manufacturing method includes a mechanism for fixing at least one of a substrate on which an electronic element is formed on a surface and a transfer substrate for transferring the substrate by suction.

  According to one aspect of the present invention, in the manufacturing method described above, peeling is performed from a bonding surface between a substrate on which an electronic element is formed and a transport substrate for transporting the substrate, using reduced pressure or chamber deformation. It has a mechanism.

  According to one aspect of the present invention, in the above manufacturing method, a mechanism for peeling off using a pressure during the process from a joint surface between a substrate on which an electronic element is formed and a transport substrate for transporting the substrate. Have.

  According to one aspect of the present invention, in the above manufacturing method, prior to the bonding step, at least one bonding surface of the substrate on which the electronic element is formed on the surface and the transfer substrate for transferring the substrate, It further includes a surface activated bond that is activated by irradiating particles with kinetic energy.

  According to one aspect of the present invention, in the above manufacturing method, before the bonding step, at least one bonding surface of the substrate on which the electronic elements are formed and the transfer substrate for transferring the substrate is formed as a thin film. The method further includes a forming step.

  According to one aspect of the present invention, in the above manufacturing method, before the bonding step, the substrate is formed on at least one bonding surface of a substrate on which an electronic element is formed and a transfer substrate for transferring the substrate. A surface activation step of activating the surface of the inorganic material layer by irradiating particles having a predetermined kinetic energy is further provided.

  According to one embodiment of the present invention, in the above manufacturing method, a part of at least one of a substrate on which an electronic element is formed and a transfer substrate for transferring the substrate is selected before the bonding step. Surface activation.

  According to one aspect of the present invention, in the above manufacturing method, prior to the bonding step, the substrate on which the electronic element is formed on the surface and the transfer substrate for transferring the substrate are selected as a part of at least one substrate. A step of forming a thin film.

  According to one aspect of the present invention, in the above manufacturing method, before the bonding step, the substrate is formed on a part of at least one of a substrate on which an electronic element is formed and a transport substrate for transporting the substrate. The surface of the formed thin film is selectively surface activated.

  According to one aspect of the present invention, in the manufacturing method described above, the entire surface or a part of at least one of a substrate on which an electronic element is formed and a transport substrate for transporting the substrate before the bonding step. Adhesion is performed using an organic material.

  According to one embodiment of the present invention, in the manufacturing method, the substrate is glass.

  According to one aspect of the present invention, in the manufacturing method, the substrate is a film made of an organic material.

  According to one aspect of the present invention, in the above manufacturing method, the substrate is a wafer made of silicon or a compound semiconductor.

  According to one embodiment of the present invention, in the above manufacturing method, the thickness of the substrate on which an electronic element is formed is 0.5 μm or more and 0.5 mm or less.

  According to one embodiment of the present invention, in the above manufacturing method, the transport substrate has a thickness of 0.1 mm to 1.1 mm.

  According to one aspect of the present invention, the manufacturing method includes a mechanism for separating a substrate on which an electronic element is formed on a surface and a transport substrate for transporting the substrate. Pressure mechanism.

  According to one aspect of the present invention, the manufacturing method includes a mechanism for separating a substrate on which an electronic element is formed on a surface and a transport substrate for transporting the substrate, using compressed air or nitrogen in the stripping step. Has a pressure mechanism.

  According to the present invention, in the manufacture of a substrate, a method is provided in which a substrate on which an electronic element is formed is bonded to a transport substrate and can be easily peeled after a manufacturing process.

  According to one aspect of the present invention, the peeling method includes a step of inserting a blade, a piano wire, and a tegs into a joint surface between a substrate on which an electronic element is formed and a transport substrate.

  According to one aspect of the present invention, the peeling method includes a mechanism in which a blade, a piano wire, or a tegs is inserted and peeled into a joint surface between a substrate on which an electronic element is formed and a transport substrate.

  According to one embodiment of the present invention, the peeling method includes a mechanism for adsorbing and fixing at least one of a substrate on which an electronic element is formed and a transport substrate.

  According to one embodiment of the present invention, the above-described peeling method includes a mechanism for peeling a substrate on which an electronic element is formed and a transfer substrate using reduced pressure or chamber deformation.

  According to one embodiment of the present invention, the peeling method includes a mechanism that peels off a substrate on which an electronic element is formed and a transfer substrate using pressure.

It is a conceptual diagram explaining the process of the manufacturing method which concerns on embodiment of this invention. It is a notional side view of the board | substrate bonded body which concerns on one Embodiment of this invention. It is a notional top view of a substrate bonded object concerning one embodiment of the present invention. It is a notional top view of a substrate bonded object concerning one embodiment of the present invention. It is a graph which shows the peeling strength of the conjugate | zygote which concerns on the Example of this invention. It is a conceptual diagram explaining the peeling process of the conjugate | zygote which concerns on the Example of this invention. It is the photograph which image | photographed the joint surface of the conjugate | zygote which concerns on the Example of this invention. It is the photograph which image | photographed the joint surface of the conjugate | zygote which concerns on the Example of this invention.

  Hereinafter, the present invention will be described with reference to embodiments, but it is obvious that the present invention is not limited to these specific embodiments.

[Embodiment 1]
The manufacturing method of this embodiment is a manufacturing method of the board | substrate with which an electronic element is formed in the surface, Comprising: The junction surface of the board | substrate 3 for conveyance for conveying the board | substrate 3 with which the electronic element 4 is formed in the surface A forming step of forming the inorganic material layer 2 on at least one of them, and a bonding step of pressing the substrate 3 and the transfer substrate 1 together to bond the substrate 3 and the transfer substrate 1 via the inorganic material layer 2; The peeling process of peeling the board | substrate 3 and the board | substrate 1 for conveyance is provided.

  In the manufacturing method having the above-described configuration, the substrate and the transfer substrate are bonded via the inorganic material layer, so that, for example, in the process after bonding the substrates, A board | substrate and a board | substrate for conveyance can be peeled easily. Alternatively, depending on the material and conditions, there is a possibility that the substrate and the transfer substrate can be easily separated even when heat treatment is performed at a higher temperature.

  The manufacturing method may further include an electronic element forming step of forming the electronic element 4 on the substrate before or after the bonding step and before the peeling step. Moreover, you may further provide the sealing process which seals an electronic element with another board | substrate.

  Examples of the electronic element 4 formed on the substrate 3 include a TFT and an organic EL element, but are not limited thereto. When the electronic element 4 is, for example, a TFT (thin film transistor), there is a heating step of about 300 ° C. to 500 ° C. in the formation process.

  FIG. 1 is a diagram for explaining an example of the manufacturing method according to the present embodiment. In this example, the form in which the inorganic material layer 2 is formed on the transport substrate 1 is shown.

(A) Transport substrate preparation step A transport substrate 1 for mounting a substrate 3 on which electronic elements 4 are formed is prepared.
(B) Formation process The inorganic material layer 2 is formed in the surface (joint surface with the board | substrate 3) of the board | substrate 1 for conveyance for conveying the board | substrate 3. FIG.
(C) Bonding Step The substrate 3 and the transfer substrate 1 are pressed against each other, and the substrate 3 and the transfer substrate 1 are bonded via the inorganic material layer 2 to form a substrate bonded body.
(D) Electronic element formation process The electronic element 4 is formed on the board | substrate 3 of a board | substrate assembly. Thereafter, a device is formed through a sealing process in which another substrate (the cover-side substrate 5) is bonded so as to seal the electronic element 4 of the substrate assembly.
(E) Peeling process The board | substrate 3 with which the electronic element 4 was formed, and the board | substrate 1 for conveyance are peeled. By this step, a device including the substrate 3 on which the electronic element 4 is formed is obtained. In this example, the inorganic material layer 2 remains on the transport substrate 1 side.

  In the above manufacturing method, a surface activation step described later may be further provided between (b) and (c).

  The manufacturing method may further include a surface activation step of activating the bonding surface of at least one of the substrate 3 or the transfer substrate 1 by irradiating particles having a predetermined kinetic energy before the bonding step. Good.

  Or in the said manufacturing method, you may further provide the surface activation process of activating the surface of the inorganic material layer 2 by irradiating the particle | grains provided with predetermined | prescribed kinetic energy before a joining process.

  By the surface activation process in the surface activation process, the bonding strength of the bonding interface among any of the transfer substrate 1, the inorganic material layer 2 and the substrate 3 can be increased in the substrate bonding process.

  By causing particles having a predetermined kinetic energy to collide and causing the material that forms the bonding surface to physically repel (sputtering phenomenon), the surface layer such as oxides and contaminants is removed, and the surface energy An emerging surface of high or active inorganic material can be exposed.

  As particles used for the surface activation treatment, for example, a rare gas or an inert gas such as neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), or helium (He) can be employed. These rare gases are unlikely to cause a chemical reaction with a substance that forms a collision surface to be collided, so that a chemical property of the bonding surface is not greatly changed by forming a compound or the like.

  Particles that collide with the surface to be surface activated can be given a predetermined kinetic energy by accelerating the particles toward the surface using a particle beam source or a plasma generator.

  It is preferable that the kinetic energy of the particles colliding with the surface to be surface activated is 1 eV to 2 keV. It is considered that the above kinetic energy efficiently causes a sputtering phenomenon in the surface layer. A desired value of kinetic energy can also be set from the above kinetic energy range according to the thickness of the surface layer to be removed, the properties such as the material, the material of the new surface, and the like.

A particle beam source can also be used to impart a predetermined kinetic energy to the particles. The particle beam source operates in a relatively high vacuum, such as a background pressure of 1 × 10 ⁻⁸ Pa (pascal) or less. The substance removed from the surface of the metal region is efficiently exhausted out of the atmosphere by the operation of the vacuum pump to draw a relatively high vacuum.

  Thereby, adhesion of the undesirable substance to the exposed new surface can be suppressed. Furthermore, since the particle beam source can apply a relatively high acceleration voltage, high kinetic energy can be imparted to the particles. Therefore, it is considered that the surface layer can be efficiently removed and the nascent surface can be activated.

Alternatively, the surface activation treatment may be performed in a vacuum or reduced pressure atmosphere in which the background pressure is 1 × 10 ⁻⁸ Pa or more and less than atmospheric pressure.

  As the particle beam source, an ion beam source that emits an ion beam or a neutral atom beam source that emits a neutral atom beam can be used. As the ion beam source, a cold cathode ion source can be used.

  As the neutral atom beam source, a fast atom beam source (FAB, Fast Atom Beam) can be used. A fast atomic beam source (FAB) typically generates a plasma to be stripped and applies an electric field to the plasma to extract ionized particles from the plasma and pass them through an electron cloud to neutralize them. It has a configuration.

  In this case, for example, when argon (Ar) is used as the rare gas, the power supplied to the fast atom beam source (FAB) may be set to 1.5 kV (kilovolt), 15 mA (milliampere), or 0.1 To a value between 500 W (watts). For example, when a fast atom beam source (FAB) is operated from 100 W (watts) to 200 W (watts) and irradiated with a fast atom beam of argon (Ar) for about 2 minutes, the oxide, contaminants, etc. (surface) Layer) can be removed to expose the nascent surface.

  In the present invention, the particles used for surface activation may be neutral atoms or ions, may be radical species, and may be a particle group in which these are mixed.

  Depending on the operating conditions of each plasma or beam source, or the kinetic energy of the particles, the removal rate of the surface layer can vary. Therefore, it is necessary to adjust the treatment time required for the surface activation treatment. For example, the presence of oxygen and carbon contained in the surface layer is confirmed using surface analysis methods such as Auger Electron Spectroscopy (AES) and X-ray Photoelectron Spectroscopy (XPS). You may employ | adopt the time which becomes impossible or longer than it as the processing time of a surface activation process.

  A predetermined kinetic energy can also be given to particles using a plasma generator. By applying an alternating voltage to the bonding surface of the substrate, a plasma containing particles is generated around the bonding surface, and the cations of the ionized particles in the plasma are accelerated toward the bonding surface by the voltage. Thus, given kinetic energy is given. Since the plasma can be generated in an atmosphere with a low degree of vacuum of about several pascals (Pa), the vacuum system can be simplified and the steps such as evacuation can be shortened.

  In the above manufacturing method, a surface activation treatment may be selectively performed on the substrate surface before the bonding step of bonding the substrate 3 and the transfer substrate 1. Moreover, you may selectively surface-activate to a part of inorganic material layer before a joining process.

  The part of the inorganic material layer is, for example, the outer peripheral portion of the substrate 3, and the surface activation treatment is performed only on the outer peripheral portion, so that the bonding force of the outer peripheral portion becomes higher with respect to the central portion of the substrate 3.

  In the manufacturing method, a plurality of different kinds of inorganic material layers may be formed. For example, different types of inorganic material layers may be formed at the central portion and the outer peripheral portion of the substrate 3. As a result, a difference in bonding strength can be provided between the central portion and the outer peripheral portion of the substrate 3. For example, the bonding strength can be controlled according to the substrate, and a part of these inorganic material layers can be selected. Alternatively, surface activation treatment may be performed.

  The transfer substrate 1 may be formed of plate-like or film-like glass, a heat-resistant film, a wafer, or a composite material thereof. More specifically, when the substrate 3 is a thin glass, the substrate 1 for conveyance is preferably a heat resistant film, a glass substrate, or a substrate having a heat resistant film attached to glass, and the substrate 3 is a heat resistant film. Is preferably glass, and when the substrate 3 is a wafer, it is preferably a wafer or glass. The conveyance substrate 1 may be provided in a form wound in a sheet shape or a roll shape.

  The transport substrate 1 preferably has a thickness of 0.1 mm or more and 1.1 mm or less from the viewpoint that an existing facility can be used.

  The inorganic material layer 2 is formed mainly of an inorganic material selected from the group consisting of metals, semiconductors, nitrides, nitride oxides, oxides and carbides. Thereby, it can suppress that a board | substrate and a board | substrate for conveyance peel | exfoliate also in the washing | cleaning process in the TFT process which is a post process.

As the inorganic material layer 2, aluminum (Al), nickel (Ni), copper (Cu), iron (Fe), titanium (Ti), tantalum (Ta), chromium (Cr), gold (Au), platinum (Pt) ), Etc., metals including transition metals, solder alloys including tin (Sn), silver (Ag) or alloys thereof, semiconductors such as silicon (Si), silicon oxide (SiO ₂ ), silicon nitride (SiNx), oxynitriding Silicon (SiC) such as silicon (SiNxOy), aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), titanium nitride (TiN), nitride such as titanium carbide (TiC), nitride oxide, oxide or carbide Can be adopted.

  A plurality of inorganic material layers 2 may be formed. That is, it is good also as a structure where the 1st inorganic material layer and the 2nd inorganic material layer were laminated | stacked. In this case, for the first inorganic material layer and the second inorganic material layer, materials such as Si and SiN that do not increase the bonding strength between the films even during heating are selected. However, other films are also considered under the condition that the bonding strength does not increase.

  The inorganic material layer 2 is preferably formed by a deposition method such as plasma enhanced chemical vapor deposition (PECVD) or sputter deposition, but is not limited thereto. When the inorganic material layer 2 is formed, it can be formed only in a predetermined region by using a predetermined mask.

  Further, when the inorganic material layer 2 is formed by depositing the predetermined inorganic material by plasma-enhanced chemical vapor deposition (PECVD) or sputter deposition, an inorganic material other than the predetermined inorganic material is formed. May be mixed.

  For example, when sputter deposition is performed by irradiating a sputter target with a particle beam to release a predetermined inorganic material of the sputter target from the sputter target, an inorganic material other than the predetermined inorganic material is introduced into the path of the particle beam. A target may be placed.

  Thereby, the mixed inorganic material in which an inorganic material other than the predetermined inorganic material is mixed with the predetermined inorganic material can be sputter-deposited. For example, the predetermined inorganic material is preferably silicon (Si), and the inorganic material other than the predetermined inorganic material is preferably a transition metal such as iron (Fe). Thereby, the joining force of the inorganic material layer 2 increases, and a joining interface having high strength and high sealing performance can be formed.

  It is preferable that the film thickness and film quality of the inorganic material layer 2 used for bonding the substrate 3 and the transfer substrate 1 are adjusted so that they can be easily peeled off after a heating process, a cleaning process, and the like.

  The substrate 3 is preferably glass. Alternatively, the substrate 3 is preferably a film made of an organic material such as PI (polyimide), PEN (polyethylene naphthalate), PET (polyethylene terephthalate), or COP (cycloolefin polymer). Alternatively, the substrate 3 is preferably a wafer made of silicon, a compound semiconductor (for example, GaP, GaAs, InP, GaN) or the like.

  The thickness of the substrate 3 is preferably 0.5 μm or more and 0.5 mm or less, and more preferably 0.5 μm or more and 0.2 mm or less. The supply form of the substrate 3 may be provided in the form of a sheet or a roll.

  In the manufacturing method, the substrate may be composed of a plurality of layers, including a layer made of glass, and a layer made of an organic material. At this time, the substrate may be composed of a layer made of glass and a layer made of an organic material, and the side of the layer made of the organic material may be bonded to the carrier substrate.

  For example, as shown in FIG. 2, a laminated substrate 8 composed of a glass layer 6 and an organic material layer 7 may be used. In this case, the material constituting the glass layer 6 and the organic material layer 7 is particularly preferably a combination of glass and PI. Further, in order to join the glass layer 6 and the organic material layer 7, a method in which an inorganic material is formed on either the glass layer 6 or the organic material layer 7 and surface activation is performed by applying predetermined energy to the surface of the inorganic material. Is preferably used. This is because when an adhesive or the like is used, problems such as solidification in the heating process occur.

  In the manufacturing method, the substrate may be composed of a plurality of films. In the said manufacturing method, a tape may be provided in the surface by the side of the board | substrate joined with the conveyance board | substrate. For example, a tape through an adhesive material may be attached to a silicon wafer, and the tape may be bonded to the transport substrate. For example, the tape material includes PET, PEN, and PI, and may include a tape base layer made of PET, PEN, and PI and at least an adhesive layer made of a material that decomposes by external irradiation.

  In the above manufacturing method, for example, as shown in FIG. 3, the inorganic material layer 2 may be formed so as to surround the electronic element 4 formed on the substrate 3 in a plan view from the substrate 3 plane side. Thereby, the board | substrate 1 for conveyance and the board | substrate 3 are easily peeled by cutting off the outer peripheral part of the inorganic material layer 2 in a peeling process.

  In the above manufacturing method, for example, as shown in FIG. 4, the inorganic material layer 2 may be formed discretely. In addition, as the form of the inorganic material layer 2, for example, a lattice shape is adopted. With such a configuration, the force applied to the substrate 3 or the like at the time of peeling can be suppressed, and damage or the like can be prevented.

  Conventionally, the transport substrate once used was disposable, but according to the manufacturing method of the above embodiment, the substrate such as laser irradiation is not damaged, and the organic adhesive is not used. The transfer substrate can be reused.

[Embodiment 2]
According to another embodiment of the present invention, there is provided a method of manufacturing a substrate having an electronic element formed on a surface, wherein at least a bonding surface of a substrate on which the electronic element is formed and a film for transporting the substrate is formed. On the other hand, a forming step of forming an inorganic material layer, and a bonding step of pressing the substrate and the film together to bond the substrate and the film through the inorganic material layer include the substrate and the film. A manufacturing method characterized by manufacturing a device substrate is provided.

  Moreover, in the said manufacturing method, you may further provide the electronic device formation process of forming an electronic device on a board | substrate after a joining process. Further, after the electronic element is formed, a cover glass, a cover film, etc. may be attached and a sealing step may be further provided.

  In the above manufacturing method, the joining step may be performed by a roll-to-roll method. Thereby, there is an advantage that mass productivity of the thin substrate is remarkably increased.

  For example, when the above-described surface activation process is performed, the bonding force between the substrates becomes strong, and the substrate cannot be easily peeled off from the transfer substrate in the peeling process depending on the conditions and materials selected in each process.

  The manufacturing method of Embodiment 2 has an advantage that it can be used not only as a carrier film but also as a protective film for a substrate by using thin glass as a substrate. When this manufacturing method is adopted, there is no need to peel off the substrate.

  In the manufacturing method according to the above-described embodiment, the substrate bonding step may be performed in a vacuum atmosphere or an inert gas atmosphere. Thereby, the bonding strength between the transfer substrate 1 and the substrate 3 can be easily controlled. More preferably, the inert gas is nitrogen gas.

  In the manufacturing method according to the above embodiment, before the substrate bonding step, the bonding surface between the substrate and the transfer substrate is exposed to an inert gas atmosphere. Thereby, it is hard to produce the change of the joining strength of the board | substrate 1 for conveyance and the board | substrate 3 by heating. More preferably, the inert gas is nitrogen gas.

In the manufacturing method according to the embodiment, the substrate bonding step may be performed in a vacuum or a reduced pressure atmosphere in which the background pressure is 1 × 10 ⁻⁸ Pa or more and less than atmospheric pressure.

  By controlling the basic vacuum, moisture and oxygen contained in the inorganic film can be controlled properly. An inorganic film having properly controlled moisture and oxygen content does not increase the bonding strength even during heating, and is easy to peel off.

  Further, for example, the substrates may be joined without going through the above-described surface activation process. For example, an inorganic material layer formed by vapor deposition or the like in a vacuum is in a state where the surface energy is high because oxidation or contamination by impurities is not progressing on the surface. By bringing the surfaces of such inorganic material layers into contact with each other, a relatively high strength bonding interface can be formed.

  Further, when the surface of the substrate 3 is strongly bonded to the inorganic material formed on the transfer substrate 1, it is not necessary to form the second inorganic material layer on the substrate 3.

[Other Embodiments]
In the above-described embodiment, when a heat-resistant film is used as a substrate, a heat-resistant film typified by polyimide easily transmits moisture. Therefore, an element-side surface needs to be provided with an inorganic film for preventing moisture transmission. Therefore, surface flatness is required. In order to ensure the flatness of the film surface serving as a substrate, a liquid resin or the like may be applied to glass and dried to form a film.

  Slit coating is preferably used as a coating method for resins and the like. The inorganic material may be composed of a plurality of films. This is because the inorganic film in contact with the liquid resin part peels off between the inorganic film formed on the transport substrate side and the inorganic film attached to the resin part even when the liquid resin part is cured and remains on the cured resin side at the time of peeling. This is because a plurality of films are formed.

  The formation of the inorganic material layer and the resin coating are preferably performed in a vacuum or in a nitrogen gas environment. This is because the amount of moisture at the bonding interface is considered to have a great influence on the bonding after heating. Moisture strengthens bonding by heating and adversely affects peeling.

  In the case of this embodiment as well, the configurations of Embodiments 1 and 2 described above can be adopted except for the configuration in which the substrate is formed from a liquid resin or the like.

  A thin substrate manufactured by the manufacturing method according to the above embodiment is provided. Moreover, the electronic element formation board | substrate which formed the electronic element on the surface of the thin substrate manufactured by the manufacturing method which concerns on said embodiment is provided.

  In addition, the forming step of forming the inorganic material layer on at least one of the bonding surface of the substrate on which the electronic elements are formed and the transport substrate for transporting the substrate, and the substrate and the transport substrate are pressed against each other There is provided a substrate transport method comprising: a joining step of joining a substrate and a transport substrate through an inorganic material layer; and a peeling step of peeling the substrate and the transport substrate.

  Also, an inorganic material layer is formed by pressing the substrate and the film against each other, and a forming step of forming an inorganic material layer on at least one of the substrate on which the electronic element is formed and the bonding surface of the film for transporting the substrate And a bonding step of bonding the substrate and the film via the substrate, and a device substrate including the substrate and the film is manufactured.

  FIG. 6 is a diagram for explaining an example of the manufacturing method according to the present embodiment. In this example, the form which peels the joined body manufactured by the manufacturing method which concerns on said Embodiment 1 or 2 is shown.

  A step of sandwiching a thin metal or a resin typified by Teggs into a part of the joined body manufactured by the manufacturing method according to the first or second embodiment is used as a trigger of the peeling step.

  Separating the substrate on which the electronic element is formed on the surface and the substrate for transporting the substrate, by separating the bonded body manufactured by the manufacturing method according to the first or second embodiment by applying pressure. A device manufacturing method is provided, characterized by manufacturing a device substrate.

  Although the embodiments of the present invention have been described above, it is obvious that the present invention includes combinations of the configurations of these embodiments.

  Examples are shown below.

The test of the Example was performed in the following procedures.
(1) Preparation of Glass Substrate (Transport Substrate) An alkali-free glass having a thickness of 0.5 mm was prepared assuming a transport substrate.

(2) Preparation of glass substrate (device substrate) An alkali-free glass having a thickness of 0.5 mm was prepared assuming a device substrate.

(3) Formation of inorganic material layer Using ion beam sputtering, an inorganic material layer of Si (silicon) was formed on one surface of the glass substrate. The input value of the ion beam at this time was 1.2 Kv / 400 mA.

(4) Room temperature bonding treatment Room temperature bonding treatment was performed under the following conditions.
(Normal temperature bonding conditions)
・ IBSS:
Si 1.2kV / 400mA, Nt = 40V / 540mA, Ar = 80sccm, 3scan
・ Press: Under nitrogen environment

(5) Peeling process The peeling process was performed with the peeling machine. Using a blade thickness of 50 μm, peeling is attempted by pressing.

Table 1 shows the results of blade insertion, peeling, and pressurization.

  A blade was inserted as shown in FIG. 6, and the pressure was applied using a pressure chamber after being cut.

(Result of strength evaluation)
It was found that the separation distance at the time of blade insertion and the pressure required for separation are in a proportional relationship.
Further, the pressure required for peeling is proportional to the substrate size.

  According to said result, it is understood that a board | substrate can be bonded together and peeled easily by a manufacturing method provided with the formation process, joining process, and peeling process which concern on this invention.

DESCRIPTION OF SYMBOLS 1 Substrate for conveyance 2 Inorganic material layer 3 Substrate 4 Electronic element 5 Cover side substrate 6 Glass layer 7 Organic material layer 8 Multilayer substrate

Claims (21)

  A substrate manufacturing method in which an electronic element is formed on a surface, wherein the electronic element is formed on a surface from a bonding surface of the substrate on which the electronic element is formed and a transport substrate for transporting the substrate And a step of peeling the transfer substrate for transferring the substrate.   The manufacturing method of Claim 1 which uses an inorganic material or an organic material for joining of the board | substrate with which an electronic element is formed in the surface, and the board | substrate for conveyance for conveying this board | substrate.   An insertion mechanism for mechanically creating a trigger for peeling such as a blade, a piano wire, or a tegs on a bonding surface of a substrate on which an electronic element is formed on the surface and a transfer substrate for transferring the substrate. Or the manufacturing method of 2.   Insertion mechanism and mechanical peeling mechanism for mechanically triggering peeling such as blades, piano wires, and tegs on the joint surface of the substrate on which the electronic elements are formed and the transport substrate for transporting the substrate The manufacturing method as described in any one of Claim 1 to 3 which has these.   The manufacturing method as described in any one of Claim 1 to 4 which has a mechanism which fixes at least one of the board | substrate with which an electronic element is formed in the surface, and the board | substrate for conveyance for conveying this board | substrate by adsorption | suction.   6. The device according to claim 1, further comprising a mechanism that peels off from a bonding surface between a substrate on which an electronic element is formed and a transport substrate for transporting the substrate, using decompression or deformation of a chamber. The manufacturing method as described.   7. The device according to claim 1, further comprising a mechanism for peeling off from a bonding surface between a substrate on which an electronic element is formed on a surface and a transfer substrate for transferring the substrate, using pressure during the process. Production method.   A surface that activates at least one bonding surface of a substrate on which electronic elements are formed on a surface and a transfer substrate for transferring the substrate by irradiating particles having a predetermined kinetic energy before the bonding step. The manufacturing method according to claim 1, further comprising an activated bonding.   2. The method according to claim 1, further comprising a step of forming a thin film on at least one of the bonding surfaces of the substrate on which the electronic elements are formed and the transfer substrate for transferring the substrate before the bonding step. The manufacturing method as described in any one of 1-8.   Prior to the bonding step, the surface of the inorganic material layer formed on at least one bonding surface of the substrate on which the electronic elements are formed and the transfer substrate for transferring the substrate is provided with particles having a predetermined kinetic energy. The method according to any one of claims 1 to 9, further comprising a surface activation step of activating by irradiating.   2. The method according to claim 1, wherein a part of at least one of the substrate on which the electronic elements are formed and the transfer substrate for transferring the substrate is selectively surface-activated before the bonding step. To 10. The production method according to any one of 10 to 10.   Before the bonding step, the method includes a step of selectively forming a thin film on a part of at least one of the substrate on which the electronic elements are formed on the surface and the transfer substrate for transferring the substrate. The manufacturing method as described in any one of Claim 1 to 11.   Prior to the bonding step, the surface of the thin film formed on a part of at least one of the substrate on which the electronic elements are formed and the transfer substrate for transferring the substrate is selectively surface activated. The manufacturing method according to claim 1, wherein:   Before the bonding step, an organic material is used to bond the entire surface or a part of at least one of the substrate on which the electronic elements are formed and the transfer substrate for transferring the substrate. The manufacturing method as described in any one of Claim 1 to 6.   The manufacturing method according to claim 1, wherein the substrate is glass.   The manufacturing method according to claim 1, wherein the substrate is a film made of an organic material.   The manufacturing method according to claim 1, wherein the substrate is a wafer made of silicon or a compound semiconductor.   The manufacturing method according to any one of claims 1 to 17, wherein a thickness of a substrate on which an electronic element is formed is 0.5 µm or more and 0.5 mm or less.   The manufacturing method according to claim 1, wherein the transport substrate has a thickness of 0.1 mm to 1.1 mm.   18. The device according to claim 1, further comprising a mechanism for separating a substrate on which an electronic element is formed and a transport substrate for transporting the substrate, and a pressurizing mechanism of 5 to 20 kPa in the stripping step. The manufacturing method as described in.   18. The apparatus according to claim 1, further comprising a mechanism for separating a substrate on which an electronic element is formed and a transport substrate for transporting the substrate, and having a pressurizing mechanism using compressed air or nitrogen in the stripping step. The production method according to item.