JP2005079129A - Plastic package and its manufacturing process - Google Patents

Plastic package and its manufacturing process Download PDF

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Publication number
JP2005079129A
JP2005079129A JP2003304243A JP2003304243A JP2005079129A JP 2005079129 A JP2005079129 A JP 2005079129A JP 2003304243 A JP2003304243 A JP 2003304243A JP 2003304243 A JP2003304243 A JP 2003304243A JP 2005079129 A JP2005079129 A JP 2005079129A
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conductor wiring
wiring pattern
plating
plastic package
wiring patterns
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Japanese (ja)
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Tomio Hioki
富男 日沖
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Sumitomo Metal SMI Electronics Device Inc
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Sumitomo Metal SMI Electronics Device Inc
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Priority to JP2003304243A priority Critical patent/JP2005079129A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plastic package capable of arranging a high density conductor wiring pattern capable of dealing with light, thin and small size while using a lead wire for electroplating, and to provide its manufacturing process. <P>SOLUTION: In the plastic package 10 having first conductor wiring patterns 17 being coupled with plated lead wires 16 extending from the dummy parts 12 of a resin substrate 11 to product parts 13, and second conductor wiring patterns 17a not coupled with the plated lead wire 16, a first lead wire 18 for short-circuiting a plurality of second conductor wiring patterns 17a and connecting wires 19 for connecting it without short-circuiting in the way are provided at the product parts 13. It is connected with one or a plurality of first conductor wiring patterns 17 through second lead wires 18a and after the second conductor wiring patterns 17a are applied with an electrolytic plating coating 15 through the first conductor wiring patterns 17, the connecting wires 19 are removed and the plurality of second conductor wiring patterns 17a are disconnected by the removed part 21. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、半導体素子等の電子部品を搭載するためのプラスチックパッケージ及びその製造方法に関し、より詳細には、配設密度の高い導体配線パターンに通電して電解めっき被膜を設けるプラスチックパッケージ及びその製造方法に関する。   The present invention relates to a plastic package for mounting an electronic component such as a semiconductor element and a manufacturing method thereof, and more specifically, a plastic package in which a conductive wiring pattern having a high arrangement density is energized to provide an electrolytic plating film and the manufacturing thereof. Regarding the method.

近年、例えば、半導体素子を搭載するためのプラスチックパッケージは、半導体素子の高密度化、高速化による多端子化、半導体素子の実装性、低コスト化、低インピーダンス化、装置の小型化のための外形寸法の小型化等の観点から、パッケージに形成する導体配線パターンの配設密度を高めることができるBGA(Ball Grid Array)タイプ等のものが多く用いられている。   In recent years, for example, plastic packages for mounting semiconductor elements have been developed to increase the density of semiconductor elements, increase the number of terminals by increasing the speed, mountability of semiconductor elements, lower costs, lower impedance, and downsizing devices. From the viewpoint of downsizing the outer dimensions, a BGA (Ball Grid Array) type or the like that can increase the arrangement density of the conductor wiring pattern formed on the package is often used.

図5に示すように、従来のBGAタイプのプラスチックパッケージ50は、樹脂基材51の一方の面に半導体素子52とボンディングワイヤ53で接続するための多数のボンディングパッド54を有するCu等からなる導体配線パターン55を有している。また、プラスチックパッケージ50は、樹脂基材51の他方の面に外部接続端子の半田ボール56を接続するための多数の半田ボールパッド57を備える導体配線パターン55を有している。ボンディングパッド54と半田ボールパッド57とは、導体配線パターン55及びスルーホール導体58を介して接続されている。ボンディングパッド54及び半田ボールパッド57は、導体配線パターン55を含む樹脂基材51の両面に形成するソルダーレジスト膜59の導体配線パターン55の所定部分を開口部として露出させることで形成している。   As shown in FIG. 5, a conventional BGA type plastic package 50 includes a conductor made of Cu or the like having a large number of bonding pads 54 for connection to a semiconductor element 52 and bonding wires 53 on one surface of a resin substrate 51. A wiring pattern 55 is provided. Further, the plastic package 50 has a conductor wiring pattern 55 provided with a large number of solder ball pads 57 for connecting solder balls 56 of external connection terminals to the other surface of the resin base material 51. The bonding pad 54 and the solder ball pad 57 are connected via a conductor wiring pattern 55 and a through-hole conductor 58. The bonding pads 54 and the solder ball pads 57 are formed by exposing predetermined portions of the conductor wiring pattern 55 of the solder resist film 59 formed on both surfaces of the resin base material 51 including the conductor wiring pattern 55 as openings.

ボンディングパッド54及び半田ボールパッド57には、通常、ボンディング性を高めたり、表面の酸化を防止して半田ボールの溶着性を高めるために電解めっき法によるNiめっき及びAuめっき(図示せず)が施されている。図6に示すように、通常、樹脂基材51は、大型のものが用意され、そこに多数個のプラスチックパッケージ50が形成される。各プラスチックパッケージ50の周囲のダミー部60から各プラスチックパッケージ50にかけては、めっき用タイバー61と、このめっき用タイバー61から個別の各プラスチックパッケージ50の導体配線パターン55や、スルーホール導体58に延設される多数のめっき引き出し線62が設けられている。Niめっき及びAuめっきは、このめっき用タイバー61からめっき引き出し線62を介して通電され、予め、めっきを不必要とする部分に被覆して形成されているソルダーレジスト膜59(図6では図示せず、図5参照)の開口部から露出する導体配線パターン55上に形成されている。そして、各プラスチックパッケージ50は、集合体からカット線63で切断されて形成されている。なお、樹脂基材51のダミー部60から製品部分に延設するめっき引き出し線62は、導体配線パターン55が製品部分の中央部にあればあるほど製品部分の外周辺部にある他の導体配線パターン55の間に複数本を配設する必要がある。   The bonding pad 54 and the solder ball pad 57 are usually subjected to Ni plating and Au plating (not shown) by an electrolytic plating method in order to improve the bonding property and prevent the surface from being oxidized to improve the solder ball welding property. It has been subjected. As shown in FIG. 6, a large resin base 51 is usually prepared, and a large number of plastic packages 50 are formed there. From the dummy portion 60 around each plastic package 50 to each plastic package 50, a plating tie bar 61, and the conductor wiring pattern 55 of each individual plastic package 50 and the through-hole conductor 58 are extended from the plating tie bar 61. A large number of plated lead wires 62 are provided. The Ni plating and Au plating are energized from the plating tie bar 61 through the plating lead-out wire 62, and a solder resist film 59 (not shown in FIG. 6) is formed by previously covering a portion that does not require plating. First, it is formed on the conductor wiring pattern 55 exposed from the opening of FIG. Each plastic package 50 is formed by being cut from the assembly by a cut line 63. Note that the plating lead wire 62 extending from the dummy portion 60 of the resin base 51 to the product portion has another conductor wiring located on the outer peripheral portion of the product portion as the conductor wiring pattern 55 is in the center portion of the product portion. It is necessary to arrange a plurality of lines between the patterns 55.

めっき引き出し線の配線方法には、CAD(Computer Aidet Design)に自動配線設計システムを用いて自動配線設計を行う方法が提案されている(例えば、特許文献1参照)。
特開2002−149734
As a method for wiring the plated lead lines, a method of performing automatic wiring design using an automatic wiring design system for CAD (Computer Aidet Design) has been proposed (for example, see Patent Document 1).
JP2002-149734

しかしながら、前述したような従来のプラスチックパッケージ及びその製造方法は、次のような問題がある。
(1)全ての導体配線パターンにめっき引き出し線を形成するには、パッケージの中央部に設ける導体配線パターンになればなるほどパッケージの外周部の導体配線パターン間に複数本のめっき引き出し線を配設しなければならないので、必然的にパッケージの外形寸法が大きくなり、軽薄短小化を求められるパッケージには、対応がとれなくなっている。また、パッケージの中央部近辺の半田ボールパッドのためのめっき引き出し線は、半田ボールパッドの互いに隣接する間隔の寸法が予め決められた寸法となっているので、樹脂基材を多層化してスルーホール導体で他の層の樹脂基材に設けるめっき引き出し線に接続する必要があり、樹脂基材の多層化でパッケージの厚さが大きくなって、軽薄短小化を求められるパッケージには不向きとなる。
(2)めっき引き出し線は、電解めっきを行うために必要となっているが、めっき引き出し線をなくす方法として、無電解めっきでめっき被膜を形成する方法が考えられる。しかしながら、無電解めっきでは、充分な被膜の厚さが確保できないので、外部接続端子である半田ボールの接着強度が低くなる。
(3)配線設計に自動配線設計システムを用いる場合には、結果的に配線設計が不可能となれば、時間と工数が無駄となり、プラスチックパッケージのコストアップとなっている。
本発明は、かかる事情に鑑みてなされたものであって、電解めっき用のめっき引き出し線を用いながらパッケージの軽薄短小化に対応できる高密度な導体配線パターンを配設できるプラスチックパッケージ及びその製造方法を提供することを目的とする。
However, the conventional plastic package and the manufacturing method thereof as described above have the following problems.
(1) In order to form plating lead lines on all conductor wiring patterns, a plurality of plating lead lines are arranged between the conductor wiring patterns on the outer periphery of the package as the conductor wiring pattern provided at the center of the package is obtained. Therefore, the external dimensions of the package are inevitably increased, and it is not possible to deal with packages that are required to be light and thin. Also, the plating lead lines for the solder ball pads near the center of the package have predetermined dimensions for the distance between adjacent solder ball pads. A conductor needs to be connected to a plated lead wire provided on the resin base material of another layer, and the thickness of the package becomes large due to the multi-layered resin base material, which is not suitable for a package that is required to be light and thin.
(2) The plated lead wire is necessary for electrolytic plating. As a method for eliminating the plated lead wire, a method of forming a plating film by electroless plating is conceivable. However, since the electroless plating cannot secure a sufficient film thickness, the adhesive strength of the solder balls as the external connection terminals is lowered.
(3) When an automatic wiring design system is used for wiring design, if the wiring design becomes impossible as a result, time and man-hours are wasted, and the cost of the plastic package is increased.
The present invention has been made in view of such circumstances, and a plastic package capable of arranging a high-density conductor wiring pattern that can be used for lightening, thinning, and shortening of the package while using a plating lead wire for electrolytic plating, and a manufacturing method thereof The purpose is to provide.

前記目的に沿う本発明に係るプラスチックパッケージは、樹脂基材のダミー部分から製品部分に延設される電解めっき被膜形成用のめっき引き出し線に連結する第1の導体配線パターンと、めっき引き出し線に連結しない第2の導体配線パターンを有するプラスチックパッケージであって、製品部分の中央部に、第2の導体配線パターンの複数を短絡させるための第1の引き出し線、及び第1の引き出し線を途中で短絡させることなく接続させるための繋ぎ線が設けられると共に、繋ぎ線と1又は複数の第1の導体配線パターンが第2の引き出し線を介して接続され、めっき引き出し線を介して第1の導体配線パターンに電解めっき被膜が施され、しかも、1又は複数の第1の導体配線パターン、第2の引き出し線、繋ぎ線、及び第1の引き出し線を介して第2の導体配線パターンに電解めっき被膜が施された後、繋ぎ線が削除されて複数の第2の導体配線パターン間が断線される削除部を有する。
ここで、プラスチックパッケージは、削除部が樹脂基材をスリット状に削除されて形成される凹み穴、又は貫通孔で形成されているのがよい。
また、プラスチックパッケージは、削除部が樹脂で充填されているのがよい。
A plastic package according to the present invention that meets the above-described object is provided with a first conductor wiring pattern that is connected to a plating lead line for forming an electrolytic plating film extending from a dummy part of a resin base material to a product part, and a plating lead line A plastic package having a second conductor wiring pattern that is not connected, wherein a first lead line and a first lead line for short-circuiting a plurality of second conductor wiring patterns are provided in the middle of the product portion. In addition, a connecting line for connection without short-circuiting is provided, and the connecting line and one or a plurality of first conductor wiring patterns are connected via the second lead line, and the first lead via the plating lead line An electroplating film is applied to the conductor wiring pattern, and one or more first conductor wiring patterns, second lead lines, connecting lines, and first lead lines are provided. After through to line electrolytic plating film on the second conductive wiring pattern has been applied, the connecting line is deleted with a deletion portion between the plurality of the second conductor wiring pattern is disconnected.
Here, in the plastic package, it is preferable that the deletion part is formed by a recessed hole or a through hole formed by deleting the resin base material into a slit shape.
In addition, the plastic package may be filled with a resin at the deleted portion.

前記目的に沿う本発明に係るプラスチックパッケージの製造方法は、樹脂基材のダミー部分から製品部分に延設される電解めっき被膜形成用のめっき引き出し線に連結する第1の導体配線パターンと、めっき引き出し線に連結しない第2の導体配線パターンに電解めっき被膜を形成するプラスチックパッケージの製造方法であって、第2の導体配線パターンの複数を短絡させるために、第2の導体配線パターンのそれぞれから延設する第1の引き出し線を設けると共に、第1の引き出し線のそれぞれが途中で短絡しないで独立して接続する線状の繋ぎ線を設け、しかも、繋ぎ線に1又は複数の第1の導体配線パターンから延設する第2の引き出し線を接続する工程と、めっき引き出し線と接続する第1の導体配線パターンの1又は複数を介して第2の導体配線パターンに電解めっき被膜を施す工程と、繋ぎ線をスリット状に穿設して除去し、電気的に独立する第2の導体配線パターンを形成する工程を有する。   A method for manufacturing a plastic package according to the present invention in accordance with the above object includes a first conductor wiring pattern connected to a plating lead wire for forming an electrolytic plating film extending from a dummy portion of a resin base material to a product portion, and plating. A method of manufacturing a plastic package in which an electrolytic plating film is formed on a second conductor wiring pattern that is not connected to a lead wire, wherein each of the second conductor wiring patterns is short-circuited in order to short-circuit a plurality of second conductor wiring patterns. In addition to providing a first lead line that extends, each of the first lead lines is provided with a linear connecting line that is independently connected without being short-circuited on the way, and one or a plurality of first connecting lines are provided on the connecting line. A step of connecting a second lead line extending from the conductor wiring pattern, and one or more of the first conductor wiring patterns connected to the plating lead line A step of forming a step of performing electroless plating film to the second conductor wiring pattern, is removed by drilling a connecting line to the slit shape, the second conductor wiring pattern electrically independent.

請求項1記載のプラスチックパッケージは、めっき引き出し線に連結する第1の導体配線パターンと、めっき引き出し線に連結しない第2の導体配線パターンを有するプラスチックパッケージであって、製品部分の中央部に、第2の導体配線パターンの複数を短絡させるための第1の引き出し線、及び第1の引き出し線を途中で短絡させることなく接続させるための繋ぎ線が設けられると共に、繋ぎ線と1又は複数の第1の導体配線パターンが第2の引き出し線を介して接続され、めっき引き出し線を介して第1の導体配線パターンに電解めっき被膜が施され、しかも、1又は複数の第1の導体配線パターン、第2の引き出し線、繋ぎ線、及び第1の引き出し線を介して第2の導体配線パターンに電解めっき被膜が施された後、繋ぎ線が削除されて複数の第2の導体配線パターン間が断線される削除部を有するので、製品部分の中央部近辺の第2の導体配線パターンには、樹脂基材のダミー部から延設するめっき引き出し線の配設が不要となり、導体配線パターンの配設密度を高めることができ、軽薄短小化を実現した高密度配線からなるプラスチックパッケージを提供できる。
特に、請求項2記載のプラスチックパッケージは、削除部が樹脂基材をスリット状に削除されて形成される凹み穴、又は貫通孔で形成されているので、繋ぎ線が確実に除去され、各導体配線パターンが電気的に確実に独立した高密度配線からなる軽薄短小化のプラスチックパッケージを提供できる。
また、請求項3記載のプラスチックパッケージは、削除部が樹脂で充填されているので、削除部の断面に露出するの導体配線パターンを大気から保護する信頼性の高い高密度配線からなる軽薄短小化のプラスチックパッケージを提供できる。
The plastic package according to claim 1 is a plastic package having a first conductor wiring pattern connected to the plating lead line and a second conductor wiring pattern not connected to the plating lead line, A first lead wire for short-circuiting a plurality of second conductor wiring patterns, and a connecting wire for connecting the first lead wire without short-circuiting in the middle are provided, and the connecting wire and one or more The first conductor wiring pattern is connected via the second lead line, the first conductor wiring pattern is coated with the electrolytic plating film via the plating lead line, and one or more first conductor wiring patterns After the electrolytic plating film is applied to the second conductor wiring pattern via the second lead wire, the connecting wire, and the first lead wire, the connecting wire is deleted. Since the second conductor wiring pattern near the center portion of the product portion extends from the dummy portion of the resin base material because the second conductor wiring pattern in the vicinity of the center portion of the product portion has a deleted portion that is disconnected between the plurality of second conductor wiring patterns. Therefore, the arrangement density of the conductor wiring pattern can be increased, and a plastic package made of high-density wiring that is light and thin can be provided.
In particular, the plastic package according to claim 2 is formed by a recess or a through hole formed by deleting the resin base material into a slit shape, so that the connecting line is reliably removed, and each conductor It is possible to provide a light, thin and small plastic package having a high-density wiring in which the wiring pattern is electrically independent.
In the plastic package according to claim 3, since the deleted portion is filled with resin, the thin and small size of the highly reliable high-density wiring that protects the conductor wiring pattern exposed in the cross section of the deleted portion from the atmosphere. Can provide plastic package.

請求項4記載のプラスチックパッケージの製造方法は、めっき引き出し線に連結する第1の導体配線パターンと、めっき引き出し線に連結しない第2の導体配線パターンに電解めっき被膜を形成するプラスチックパッケージの製造方法であって、第2の導体配線パターンのそれぞれから延設する第1の引き出し線を設けると共に、第1の引き出し線のそれぞれが途中で短絡しないで独立して接続する線状の繋ぎ線を設け、しかも、繋ぎ線に1又は複数の第1の導体配線パターンから延設する第2の引き出し線を接続する工程と、めっき引き出し線と接続する第1の導体配線パターンの1又は複数を介して第2の導体配線パターンに電解めっき被膜を施す工程と、繋ぎ線をスリット状に穿設して除去し、電気的に独立する第2の導体配線パターンを形成する工程を有するので、パッケージの中央部近辺の第2の導体配線パターンに容易に通電して電解めっき被膜を形成することができ、特段の製造方法を用いることなく、安価に作製することができる高密度配線からなる軽薄短小化のプラスチックパッケージの製造方法を提供できる。   5. The method of manufacturing a plastic package according to claim 4, wherein an electrolytic plating film is formed on the first conductor wiring pattern connected to the plating lead line and the second conductor wiring pattern not connected to the plating lead line. In addition, a first lead line extending from each of the second conductor wiring patterns is provided, and a linear connecting line that connects each of the first lead lines independently without short-circuiting is provided. In addition, a step of connecting a second lead line extending from one or a plurality of first conductor wiring patterns to the connecting line, and one or a plurality of first conductor wiring patterns connected to the plating lead line A step of applying an electrolytic plating film to the second conductor wiring pattern; and a second conductor wiring pattern which is electrically independent by drilling and removing the connecting wire in a slit shape. Therefore, it is possible to form the electrolytic plating film easily by energizing the second conductor wiring pattern near the center of the package without using a special manufacturing method. It is possible to provide a method for manufacturing a light, thin and small plastic package made of high-density wiring that can be manufactured.

続いて、添付した図面を参照しつつ、本発明を具体化した実施するための最良の形態について説明し、本発明の理解に供する。
ここに、図1(A)、(B)はそれぞれ本発明の一実施の形態に係るプラスチックパッケージの平面図、部分拡大縦断面図、図2(A)、(B)はそれぞれ同プラスチックパッケージの変形例の説明図、図3(A)〜(C)はそれぞれ同プラスチックパッケージの他の変形例の説明図、図4(A)〜(D)はそれぞれ同プラスチックパッケージの製造方法の説明図である。
Subsequently, the best mode for carrying out the present invention will be described with reference to the accompanying drawings to provide an understanding of the present invention.
1A and 1B are a plan view and a partially enlarged longitudinal sectional view of a plastic package according to an embodiment of the present invention, respectively, and FIGS. 2A and 2B are views of the plastic package, respectively. 3A to 3C are explanatory diagrams of other modified examples of the plastic package, and FIGS. 4A to 4D are explanatory diagrams of a method for manufacturing the plastic package. is there.

図1(A)、(B)に示すように、本発明の一実施の形態に係るプラスチックパッケージ10は、大型のパネル状の樹脂基材11に複数個が周囲にダミー部分12を有し、それぞれダミー部分12を切断して除去して個片の製品部分13として形成されている。このプラスチックパッケージ10は、製品部分13に、樹脂基材11の切断前のダミー部分12に形成されためっきタイバー14から延設される電解めっき被膜15形成用のめっき引き出し線16に連結する第1の導体配線パターン17を有している。また、このプラスチックパッケージ10は、製品部分13の中央部近辺にめっき引き出し線16に連結しない第2の導体配線パターン17aを有している。製品部分13の中央部近辺には、第2の導体配線パターン17aの複数を電気的に短絡させるための第1の引き出し線18と、この第1の引き出し線18どうしを途中で短絡させることなく接続させるための繋ぎ線19が設けられる。この繋ぎ線19には、1又は複数の第1の導体配線パターン17が第2の引き出し線18aを介して接続される。そして、めっき浴中に浸漬されたパッケージのめっきタイバー14を介してめっき引き出し線16に通電してソルダーレジスト膜20の開口部から露出する所望の部分の第1の導体配線パターン17、及び第2の導体配線パターン17aに、Niめっき、及びAuめっきからなる電解めっき被膜15が施される。この後、プラスチックパッケージ10には、繋ぎ線19が切削等によって削除されて、複数のそれぞれの第2の導体配線パターン17a間が断線状態にされるための削除部21が設けられている。なお、このプラスチックパッケージ10は、スルーホール導体22を介して両面に形成されたそれぞれのパターン間を電気的に導通状態としている。   As shown in FIGS. 1A and 1B, a plastic package 10 according to an embodiment of the present invention includes a large panel-shaped resin substrate 11 having a plurality of dummy portions 12 around it, Each of the dummy portions 12 is cut and removed to form individual product portions 13. The plastic package 10 is connected to a product portion 13 with a plating lead wire 16 for forming an electrolytic plating film 15 extending from a plating tie bar 14 formed on a dummy portion 12 before cutting the resin base material 11. The conductor wiring pattern 17 is provided. Further, the plastic package 10 has a second conductor wiring pattern 17 a that is not connected to the plated lead wire 16 near the center of the product portion 13. In the vicinity of the center portion of the product portion 13, the first lead wire 18 for electrically short-circuiting the plurality of second conductor wiring patterns 17 a and the first lead wire 18 are not short-circuited in the middle. A connecting line 19 for connection is provided. One or more first conductor wiring patterns 17 are connected to the connecting line 19 via the second lead line 18a. Then, a first conductor wiring pattern 17 and a second portion of a desired portion exposed from the opening of the solder resist film 20 by energizing the plating lead wire 16 through the plating tie bar 14 of the package immersed in the plating bath. An electroplating film 15 made of Ni plating and Au plating is applied to the conductor wiring pattern 17a. After that, the plastic package 10 is provided with a deletion portion 21 for deleting the connecting wire 19 by cutting or the like so that the plurality of second conductor wiring patterns 17a are disconnected. The plastic package 10 is electrically connected between the patterns formed on both sides via the through-hole conductors 22.

図2(A)に示すように、プラスチックパッケージ10は、製品部分13の中央部近辺に形成されていた繋ぎ線19が削除された部分に、樹脂基材11の内部部分までを削り落として形成されるようなスリット状の凹み穴21aを有するのがよい。あるいは、図2(B)に示すように、プラスチックパッケージ10は、製品部分13の中央部近辺に形成されていた繋ぎ線19が削除された部分に、樹脂基材11を完全にくり抜いて形成されるようなスリット状の貫通孔21bを有するのがよい。   As shown in FIG. 2 (A), the plastic package 10 is formed by scraping up to the inner part of the resin base material 11 in the part where the connecting line 19 formed in the vicinity of the center part of the product part 13 is deleted. It is preferable to have a slit-like recess hole 21a. Alternatively, as shown in FIG. 2 (B), the plastic package 10 is formed by completely cutting out the resin base material 11 in a portion where the connecting wire 19 formed near the center of the product portion 13 is removed. It is preferable to have such a slit-shaped through hole 21b.

また、図3(A)に示すように、プラスチックパッケージ10は、製品部分13の中央部近辺に形成されていた繋ぎ線19が削除された削除部21に、ソルダーレジスト膜20と実質的に同様の部材からなる樹脂23が充填されているのがよい。あるいは、図3(B)、(C)に示すように、削除部21がスリット状の凹み穴21aや、スリット状の貫通孔21bの場合においても、凹み穴21aや、貫通孔21bには、樹脂23が充填されているのがよい。   Further, as shown in FIG. 3A, the plastic package 10 is substantially similar to the solder resist film 20 in the deleted portion 21 from which the connecting line 19 formed in the vicinity of the center portion of the product portion 13 is deleted. It is preferable that the resin 23 made of the above member is filled. Alternatively, as shown in FIGS. 3 (B) and 3 (C), even when the deletion portion 21 is a slit-like recess hole 21a or a slit-like through hole 21b, the recess hole 21a or the through hole 21b includes The resin 23 is preferably filled.

次いで、図4(A)〜(D)を参照しながら、本発明の一実施の形態に係るプラスチックパッケージ10の製造方法について説明する。
樹脂基材11には、例えば、BT樹脂(ビスマレイミドトリアジンを主成分にした樹脂)やエポキシ樹脂等の高耐熱性、誘電特性、絶縁特性、加工性に優れた樹脂が用いられ、樹脂基材11の両面には、Cu箔が貼られている。図4(A)に示すように、両面にCu箔が貼られている樹脂基材11には、スルーホール導体22形成用の貫通孔が形成され、両面、及び貫通孔の壁面に無電解Cuめっき、及び電解Cuめっきを施して両面にCu箔とCuめっき被膜からなるCu層24と、貫通孔にCuめっき被膜からなるスルーホール導体22を形成する。なお、樹脂表面へ直接無電解Cuめっきでめっきをする方法は、樹脂表面にパラジウム等の触媒を付与後、ホルマリンを還元剤とする強アルカリ浴中で化学的に行うことができる。また、電解Cuめっきは、例えば、硫酸銅、ピロリン酸等のめっき浴中で通電して、無電解Cuめっき被膜の表面に電解Cuめっき被膜を形成している。次いで、Cu層が形成された樹脂基材11の両面には、感光性のドライフィルムを展着し、パターンマスクを当接して露光し、現像するフォトリソグラフィ法で所望するパターンと逆パターンを開口部とするエッチングレジスト膜25を形成する。
Next, a method for manufacturing the plastic package 10 according to an embodiment of the present invention will be described with reference to FIGS.
For the resin base material 11, for example, a resin excellent in high heat resistance, dielectric characteristics, insulating characteristics, and workability such as BT resin (resin mainly composed of bismaleimide triazine) and epoxy resin is used. Cu foil is stuck on both surfaces of 11. As shown in FIG. 4 (A), through holes for forming through-hole conductors 22 are formed in resin base material 11 having Cu foil pasted on both surfaces, and electroless Cu is formed on both surfaces and the wall surfaces of the through holes. Plating and electrolytic Cu plating are performed to form a Cu layer 24 made of a Cu foil and a Cu plating film on both sides, and a through-hole conductor 22 made of a Cu plating film in the through hole. The method of directly plating the resin surface with electroless Cu plating can be performed chemically in a strong alkali bath using formalin as a reducing agent after applying a catalyst such as palladium to the resin surface. In addition, in the electrolytic Cu plating, for example, a current is applied in a plating bath such as copper sulfate or pyrophosphoric acid to form an electrolytic Cu plating film on the surface of the electroless Cu plating film. Next, a photosensitive dry film is spread on both surfaces of the resin base material 11 on which the Cu layer is formed, exposed to contact with a pattern mask, and a pattern opposite to the desired pattern is opened by photolithography. An etching resist film 25 to be a part is formed.

次に、図4(B)に示すように、エッチングレジスト膜25の開口部から露出するCu層24には、例えば、塩化第2鉄溶液や、塩化第2銅溶液等のエッチング液を用いてエッチングが施され、Cu層24を除去している。そして、ドライフィルムを剥離して除去した樹脂基材11の、例えば下面側には、樹脂基材11のダミー部分12から製品部分13に延設し、めっき引き出し線16に連結する第1の導体配線パターン17が形成されている。また、これと同時に、樹脂基材11の下面側には、めっき引き出し線16に連結しない第2の導体配線パターン17aが形成されている。この第2の導体配線パターン17aの複数を短絡させるために、第2の導体配線パターン17aには、第2の導体配線パターン17aから延設する第1の引き出し線18を設けていると共に、第1の引き出し線18のそれぞれが途中で短絡しないで独立して接続する線状の繋ぎ線19を設けている。しかも、繋ぎ線19には、1又は複数の第1の導体配線パターン17から延設する第2の引き出し線18aを接続している。   Next, as shown in FIG. 4B, an etching solution such as a ferric chloride solution or a cupric chloride solution is used for the Cu layer 24 exposed from the opening of the etching resist film 25, for example. Etching is performed to remove the Cu layer 24. The first conductor that extends from the dummy portion 12 of the resin substrate 11 to the product portion 13 and is connected to the plated lead wire 16 is formed on the lower surface side of the resin substrate 11 that has been removed by removing the dry film, for example. A wiring pattern 17 is formed. At the same time, a second conductor wiring pattern 17 a that is not connected to the plated lead wire 16 is formed on the lower surface side of the resin base material 11. In order to short-circuit a plurality of second conductor wiring patterns 17a, the second conductor wiring pattern 17a is provided with a first lead line 18 extending from the second conductor wiring pattern 17a, and Each of the one lead wires 18 is provided with a linear connecting wire 19 that is independently connected without being short-circuited in the middle. In addition, the connecting wire 19 is connected to a second lead wire 18 a extending from one or a plurality of first conductor wiring patterns 17.

次に、図4(C)に示すように、樹脂基材11の両面には、第1導体配線パターン17、及び第2の導体配線パターン17aを含む全ての導体配線パターンの必要部分を開口部から露出させるためと同時に、ビアホール導体22内を充填させるために、スクリーン印刷やフォトリソグラフィ法等でソルダーレジスト膜20を形成する。次いで、樹脂基材11は、例えば、ワット浴や、スルファミン酸浴等のNiめっき浴中に浸漬し、めっきタイバー14を介するめっき引き出し線16から通電する電解めっきによって、ソルダーレジスト膜20の開口部から露出する導体配線パターン上にNiめっき被膜を施す。更に、樹脂基材11は、Auめっき浴や、Au合金めっき浴等のめっき浴中に浸漬し、めっきタイバー14を介するめっき引き出し線16から通電する電解めっきによって、Niめっき被膜の表面にAuめっき被膜を施す。これにより、ソルダーレジスト膜20の開口部から露出する導体配線パターン上には、Niめっき被膜及びAuめっき被膜からなる電解めっき被膜15が形成される。なお、Niめっき被膜は、Co等を含有させた合金めっき被膜であってもよい。   Next, as shown in FIG. 4 (C), on both surfaces of the resin base material 11, necessary portions of all the conductor wiring patterns including the first conductor wiring pattern 17 and the second conductor wiring pattern 17a are opened. The solder resist film 20 is formed by screen printing or photolithography to fill the via hole conductor 22 at the same time. Next, the resin base material 11 is immersed in a Ni plating bath such as a watt bath or a sulfamic acid bath, and an opening portion of the solder resist film 20 is obtained by electroplating through a plating lead wire 16 through the plating tie bar 14. A Ni plating film is applied on the conductor wiring pattern exposed from Further, the resin base material 11 is immersed in a plating bath such as an Au plating bath or an Au alloy plating bath, and the surface of the Ni plating film is subjected to Au plating by electroplating through the plating lead wire 16 via the plating tie bar 14. Apply the coating. As a result, an electrolytic plating film 15 composed of a Ni plating film and an Au plating film is formed on the conductor wiring pattern exposed from the opening of the solder resist film 20. The Ni plating film may be an alloy plating film containing Co or the like.

ここで、ソルダーレジスト膜20の開口部から露出する第2の導体配線パターン17aには、めっき引き出し線16と接続する第1の導体配線パターン17の1又は複数を介して通電されて電解めっき被膜15が施されている。このソルダーレジスト膜20の開口部から露出する部分の導体配線パターンは、例えば、パッケージに搭載された半導体素子と接続するボンディングワイヤ接合用のワイヤボンドパッドであったり、半田ボール等の外部接続端子接合用のボールパッドであったりする。なお、ソルダーレジスト膜20の形成において、繋ぎ線19は、ソルダーレジスト膜20の開口部から露出するようにしてよい。この場合には、後から行われる繋ぎ線19の削除において、作業を容易に行うことができる。また、繋ぎ線19は、ソルダーレジスト膜20で被覆してもよい。この場合には、Niめっきや、Auめっきの高価な電解めっき被膜15を節約することができる。   Here, the second conductor wiring pattern 17 a exposed from the opening of the solder resist film 20 is energized through one or more of the first conductor wiring patterns 17 connected to the plating lead lines 16 to be electroplated. 15 is given. The portion of the conductor wiring pattern exposed from the opening of the solder resist film 20 is, for example, a wire bond pad for bonding wire connection with a semiconductor element mounted on a package, or an external connection terminal connection such as a solder ball. Or a ball pad. In forming the solder resist film 20, the connecting line 19 may be exposed from the opening of the solder resist film 20. In this case, the work can be easily performed in the deletion of the connecting line 19 performed later. Further, the connecting wire 19 may be covered with a solder resist film 20. In this case, the expensive electrolytic plating film 15 of Ni plating or Au plating can be saved.

次に、図4(D)に示すように、樹脂基材11には、繋ぎ線19をルーター加工機等で樹脂基材11から繋ぎ線19に沿うようにスリット状に穿設して除去し、削除部21を形成している。これにより、第2の導体配線パターン17aは、互いに電気的に独立したパターンとなることで、プラスチックパッケージ10が作製されている。なお、この削除部21の形成は、樹脂基材11の内部まで切削して凹み穴21aの状態になるように切削して形成してもよく、あるいは、樹脂基材11全体を切削して貫通孔21bの状態になるように切削して形成してもよい。また、切削部21(凹み穴21a、貫通孔21bを含む)には、ソルダーレジスト膜20と実質的に同等のソルダーレジストペーストからなる樹脂23をスクリーン印刷等で充填し、硬化させて形成してもよい。   Next, as shown in FIG. 4 (D), the connecting wire 19 is removed from the resin base material 11 in a slit shape along the connecting wire 19 from the resin base material 11 with a router machine or the like. The deletion unit 21 is formed. Thereby, the second conductor wiring pattern 17a becomes a pattern electrically independent from each other, and thus the plastic package 10 is manufactured. The deleted portion 21 may be formed by cutting to the inside of the resin base material 11 so as to be in the state of the recessed hole 21a, or by cutting the entire resin base material 11 to penetrate. You may cut and form so that it may be in the state of the hole 21b. In addition, the cutting part 21 (including the recessed hole 21a and the through hole 21b) is formed by filling a resin 23 made of a solder resist paste substantially equivalent to the solder resist film 20 by screen printing or the like and curing it. Also good.

樹脂基材11に形成された複数個のプラスチックパッケージ10は、ダミー部分12を切断除去して、個片からなるプラスチックパッケージ10を作製している。あるいは、樹脂基材11に形成された複数個のプラスチックパッケージ10には、この状態でそれぞれのプラスチックパッケージ10に半導体素子等の電子部品を搭載し、電子部品を気密封止した後に、ダミー部分12を切断除去して、個片からなる電子部品が実装されたプラスチックパッケージ10を作製している場合もある。   The plurality of plastic packages 10 formed on the resin base 11 are cut and removed from the dummy portion 12 to produce a plastic package 10 made of individual pieces. Alternatively, in the plurality of plastic packages 10 formed on the resin base material 11, electronic parts such as semiconductor elements are mounted in the respective plastic packages 10 in this state, and the electronic parts are hermetically sealed, and then the dummy portion 12. May be cut and removed to produce a plastic package 10 on which electronic components made of individual pieces are mounted.

本発明では、集積度の高い半導体素子を搭載させるプラスチックパッケージを軽薄短小化させることができるので、活用例としては、半導体素子を搭載する高機能且つ小型化が要求される電子機器、例えば、携帯電話や、ノートブック型のコンピューター等に適用することができる。   In the present invention, a plastic package on which a highly integrated semiconductor element is mounted can be reduced in size, thickness, and size. As an application example, an electronic device mounted with a semiconductor element and required to be downsized, for example, a portable device. It can be applied to telephones and notebook computers.

(A)、(B)はそれぞれ本発明の一実施の形態に係るプラスチックパッケージの平面図、部分拡大縦断面図である。(A), (B) is the top view of the plastic package which concerns on one embodiment of this invention, respectively, and a partial expanded longitudinal sectional view. (A)、(B)はそれぞれ同プラスチックパッケージの変形例の説明図である。(A), (B) is explanatory drawing of the modification of the plastic package, respectively. (A)〜(C)はそれぞれ同プラスチックパッケージの他の変形例の説明図である。(A)-(C) are explanatory drawings of the other modification of the plastic package, respectively. (A)〜(D)はそれぞれ同プラスチックパッケージの製造方法の説明図である。(A)-(D) are explanatory drawings of the manufacturing method of the plastic package, respectively. 従来のプラスチックパッケージの説明図である。It is explanatory drawing of the conventional plastic package. 同プラスチックパッケージ及びその製造方法の説明図である。It is explanatory drawing of the plastic package and its manufacturing method.

符号の説明Explanation of symbols

10:プラスチックパッケージ、11:樹脂基材、12:ダミー部分、13:製品部分、14:めっきタイバー、15:電解めっき被膜、16:めっき引き出し線、17:第1の導体配線パターン、17a:第2の導体配線パターン、18:第1の引き出し線、18a:第2の引き出し線、19:繋ぎ線、20:ソルダーレジスト膜、21:削除部、21a:凹み穴、21b:貫通孔、22:スルーホール導体、23:樹脂、24:Cu層、25:エッチングレジスト膜   DESCRIPTION OF SYMBOLS 10: Plastic package, 11: Resin base material, 12: Dummy part, 13: Product part, 14: Plating tie bar, 15: Electrolytic plating film, 16: Plating lead wire, 17: 1st conductor wiring pattern, 17a: 1st 2 conductor wiring patterns, 18: first lead wire, 18a: second lead wire, 19: connecting wire, 20: solder resist film, 21: deleted portion, 21a: recessed hole, 21b: through hole, 22: Through-hole conductor, 23: resin, 24: Cu layer, 25: etching resist film

Claims (4)

樹脂基材のダミー部分から製品部分に延設される電解めっき被膜形成用のめっき引き出し線に連結する第1の導体配線パターンと、前記めっき引き出し線に連結しない第2の導体配線パターンを有するプラスチックパッケージであって、
前記製品部分の中央部に、前記第2の導体配線パターンの複数を短絡させるための第1の引き出し線、及び該第1の引き出し線を途中で短絡させることなく接続させるための繋ぎ線が設けられると共に、該繋ぎ線と1又は複数の前記第1の導体配線パターンが第2の引き出し線を介して接続され、前記めっき引き出し線を介して前記第1の導体配線パターンに前記電解めっき被膜が施され、しかも、1又は複数の前記第1の導体配線パターン、前記第2の引き出し線、前記繋ぎ線、及び前記第1の引き出し線を介して前記第2の導体配線パターンに前記電解めっき被膜が施された後、前記繋ぎ線が削除されて複数の前記第2の導体配線パターン間が断線される削除部を有することを特徴とするプラスチックパッケージ。
A plastic having a first conductor wiring pattern connected to a plating lead wire for forming an electrolytic plating film extending from a dummy portion of a resin base material to a product portion, and a second conductor wiring pattern not connected to the plating lead wire A package,
A first lead wire for short-circuiting a plurality of the second conductor wiring patterns and a connecting wire for connecting the first lead wires without being short-circuited in the middle are provided at the center of the product portion. In addition, the connecting wire and one or a plurality of the first conductor wiring patterns are connected via a second lead wire, and the electrolytic plating film is applied to the first conductor wiring pattern via the plating lead wire. And the electrolytic plating film is applied to the second conductor wiring pattern via the one or more first conductor wiring patterns, the second lead lines, the connecting lines, and the first lead lines. A plastic package, comprising: a deletion portion in which the connecting line is deleted and a plurality of the second conductor wiring patterns are disconnected after being applied.
請求項1記載のプラスチックパッケージにおいて、前記削除部が前記樹脂基材をスリット状に削除されて形成される凹み穴、又は貫通孔で形成されていることを特徴とするプラスチックパッケージ。   2. The plastic package according to claim 1, wherein the deletion portion is formed by a recessed hole or a through hole formed by deleting the resin base material into a slit shape. 3. 請求項1又は2記載のプラスチックパッケージにおいて、前記削除部が樹脂で充填されていることを特徴とするプラスチックパッケージ。   3. The plastic package according to claim 1, wherein the deleted portion is filled with a resin. 樹脂基材のダミー部分から製品部分に延設される電解めっき被膜形成用のめっき引き出し線に連結する第1の導体配線パターンと、前記めっき引き出し線に連結しない第2の導体配線パターンに電解めっき被膜を形成するプラスチックパッケージの製造方法であって、
前記第2の導体配線パターンの複数を短絡させるために、前記第2の導体配線パターンのそれぞれから延設する第1の引き出し線を設けると共に、該第1の引き出し線のそれぞれが途中で短絡しないで独立して接続する線状の繋ぎ線を設け、しかも、該繋ぎ線に1又は複数の前記第1の導体配線パターンから延設する第2の引き出し線を接続する工程と、
前記めっき引き出し線と接続する前記第1の導体配線パターンの1又は複数を介して前記第2の導体配線パターンに前記電解めっき被膜を施す工程と、
前記繋ぎ線をスリット状に穿設して除去し、電気的に独立する前記第2の導体配線パターンを形成する工程を有することを特徴とするプラスチックパッケージの製造方法。
Electrolytic plating is applied to a first conductor wiring pattern connected to a plating lead wire for forming an electrolytic plating film extending from a dummy portion of a resin base material to a product portion, and a second conductor wiring pattern not connected to the plating lead wire. A method of manufacturing a plastic package for forming a film,
In order to short-circuit a plurality of the second conductor wiring patterns, a first lead line extending from each of the second conductor wiring patterns is provided, and each of the first lead lines is not short-circuited in the middle. A step of providing a linear connecting line that is independently connected to each other, and connecting a second lead line extending from one or a plurality of the first conductor wiring patterns to the connecting line;
Applying the electrolytic plating film to the second conductor wiring pattern via one or more of the first conductor wiring patterns connected to the plating lead lines;
A method of manufacturing a plastic package, comprising the step of forming the second conductor wiring pattern that is electrically independent by drilling and removing the connecting wire in a slit shape.
JP2003304243A 2003-08-28 2003-08-28 Plastic package and its manufacturing process Pending JP2005079129A (en)

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US8500984B2 (en) 2008-06-26 2013-08-06 Oki Semiconductor Co., Ltd. Method for manufacturing printed-circuit board
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US7476969B2 (en) 2005-07-29 2009-01-13 Omron Corporation Semiconductor packages for surface mounting and method of producing same
US8420451B2 (en) 2006-06-14 2013-04-16 Renesas Electronics Corporation Manufacturing method of semiconductor device
US7659146B2 (en) 2006-06-14 2010-02-09 Renesas Technology Corp. Manufacturing method of semiconductor device
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JP2018152597A (en) * 2017-01-13 2018-09-27 大日本印刷株式会社 Through electrode substrate and manufacturing method thereof
JP7163069B2 (en) 2017-01-13 2022-10-31 大日本印刷株式会社 Penetration electrode substrate and manufacturing method thereof

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