JP2005079111A - Method, device, and program for creating electron beam lithography data and electron beam lithography equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method, device, and program for creating electron beam lithography data by which the creation time or plotting time of lithography data for multiple plotting can be shortened by reducing the amount of the data, and to provide electron beam lithography equipment. <P>SOLUTION: A dimension and form and a relationship between their peripheral patterns are analyzed for each pattern and, when it is decided that multiple plotting is unnecessary, the output of duplicated patterns for multiple plotting is omitted. With respect to a pattern for which multiple plotting is omitted, the plotting is adjusted by increasing the dose quantity of an electron beam, or the like. Even when multiple plotting is required, divided forms of the pattern is are made the same, and the divided patterns are outputted in a multiple state by utilizing the compressed expression of the lithography data except the case where the effect of superimposing different divided forms of patterns such as the occurrence, etc., of a plotting field boundary or minute graphic is expected. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electron beam drawing data creation method, a creation device, a creation program, and an electron beam drawing device, and more particularly, to reduce the data capacity of electron beam drawing data for multiple drawing and reduce the data creation time. The present invention relates to a data creation method, a creation apparatus, a creation program, and an electron beam drawing apparatus.
[0002]
[Prior art]
With the improvement in performance of semiconductor integrated circuits, the miniaturization of patterns has been rapidly advanced. An exposure method using an electron beam (EB) has an important role in that a fine pattern having a length of 0.25 micrometers or less, which will be required in the future, can be formed.
[0003]
FIG. 6 is a flowchart showing a part of the manufacturing process of the semiconductor integrated circuit. That is, this figure shows a process of forming an exposure mask M such as a so-called “master reticle”.
First, in step S1, the layout of the semiconductor integrated circuit is designed, and layout data LD is generated. The layout data LD may be referred to as “CAD (computer aided design) data”. Next, in step S2, the layout data LD is converted, and drawing data DD used in the electron beam drawing apparatus is generated. The drawing data DD is input to the electron beam drawing apparatus EL. On the other hand, a mask material in which a light-shielding layer such as chromium (Cr) is laminated on a light-transmitting substrate such as quartz and a resist layer is further formed thereon is introduced into an electron beam drawing apparatus. Then, the resist layer of the mask material is exposed with an electron beam based on the drawing data DD. Thereafter, the resist layer is developed to selectively remove a part thereof to form a resist pattern. A mask M on which a predetermined pattern is formed can be formed by selectively etching away a light shielding layer such as chrome using the resist pattern as a mask.
[0004]
Initially, the number of times of drawing on one mask M by the drawing data DD was one. That is, the electron beam lithography apparatus EL irradiates the resist layer on the surface of the mask M with a necessary electron beam by one electron beam exposure.
However, as a part of improving mask accuracy, “multiple drawing” is performed in which an electron beam drawing apparatus draws the same pattern in an overlapping manner for the purpose of reducing the positioning error of the electron beam.
[0005]
FIG. 7 is a schematic diagram conceptually showing multiple drawing.
In other words, “multiple drawing” means that the electron beam dose required for resist exposure is divided into multiple parts, and the same pattern is overprinted at each dose to improve accuracy by so-called “averaging”. Is possible. The number obtained by dividing the irradiation amount is called “multiplicity”.
[0006]
In this case, in order to improve accuracy, a proposal has been made to draw under optimum drawing conditions by changing the electron beam irradiation amount and the maximum shot size each time (Patent Document 1). Furthermore, in order to improve pattern dimensions and connection accuracy in multiple drawing, a technique of drawing multiple patterns divided into different shapes instead of the same pattern has been realized.
[0007]
FIG. 8 is a schematic diagram showing multiple drawing divided into different shapes. That is, in the specific example shown in the figure, drawing data DD1 and DD2 respectively corresponding to two drawing operations are generated. Each drawing data is divided into patterns at a drawing field boundary FI. The drawing field boundary FI is shifted between the drawing data DD1 and the drawing data DD2 in order to suppress the occurrence of the pattern “joint” at the drawing field boundary FI.
[0008]
Furthermore, even when a trapezoidal division process is performed on a non-simple pattern, the trapezoid division direction can be changed in order to obtain the effect of averaging in consideration of the generation of minute figures.
FIG. 9 is a schematic diagram illustrating multiple drawing in which the trapezoid division direction is changed. That is, since the patterns A and B of the layout data LD are not simple squares, it is necessary to perform a process of dividing them into a plurality of trapezoids. Also in this case, by changing the trapezoidal division direction between the drawing data DD1 and the drawing data DD2, it is possible to suppress a decrease in accuracy even when a minute figure is generated, and further, the effect of “averaging” is also achieved. can get. That is, in the specific example shown in FIG. 9, in the drawing data DD1, the patterns A1 and B1 are divided in the X direction, while in the drawing data DD2, the corresponding patterns A2 and B2 are divided in the Y direction. It is divided into.
Also, a method of performing double drawing by changing the shape only for a minute figure has been proposed (Patent Document 2).
As described above, multiple drawing is effective for avoiding resist heating and increasing pattern accuracy in an electron beam drawing apparatus. Furthermore, by shifting the drawing field or changing the trapezoidal division direction, an averaging effect can be obtained, and a fine pattern can be formed with high accuracy.
[0009]
[Patent Document 1]
JP-A-9-251940 [Patent Document 2]
Japanese Patent Laid-Open No. 2002-296759
[Problems to be solved by the invention]
However, in the conventional multiple drawing method, in principle, multiple drawing is executed for all patterns of the mask. For this reason, there has been a problem that the creation time of drawing data, the amount of data, and the drawing time increase by a maximum of 2 times in the case of double drawing and a maximum of 4 times in the case of quadruple drawing. . Considering that LSIs will continue to increase in scale and integration in the future, it is expected that it will be difficult to continue the multiple drawing method as it is.
[0011]
In addition, in the case of the method disclosed in Patent Document 2 described above, only a minute figure is deformed and double drawing is performed. However, when one pattern is formed, a single drawing portion, a multiple drawing portion, and Therefore, the setting of deformation conditions and the like are complicated, and there is a possibility that problems such as an increase in processing time may occur.
[0012]
The present invention has been made on the basis of recognition of such a problem, and an object of the present invention is to reduce the amount of drawing data for multiple drawing, and to shorten the creation time and drawing time of the electron beam drawing. The object is to provide a data creation method, a creation apparatus, a creation program, and an electron beam drawing apparatus.
[0013]
[Means for Solving the Problems]
In order to achieve the above object, in the present invention, for each pattern, the size, shape, and relationship with surrounding patterns are analyzed, and if it is determined that multiple drawing is unnecessary, the output of the overlapping pattern for multiple drawing is omitted. To do. For a pattern in which multiple drawing is omitted, the drawing is adjusted by a method such as increasing the dose of the electron beam. Even when multiple drawing is required, the pattern division shape is the same, and the drawing data is compressed, unless there is an effect of overlapping different division shape patterns such as drawing field boundaries and generation of minute figures. Multiple output using expressions.
[0014]
In this way, it is possible to effectively reduce the drawing data amount of multiple drawing, shorten the generation time of drawing data, and shorten the drawing time.
[0015]
That is, according to the present invention, there is provided an electron beam drawing data generation method for generating drawing data for drawing on an object to be exposed by multiple drawing using an electron beam. There is provided an electron beam drawing data generation method characterized in that it is possible to mix patterns having different multiplicity.
[0016]
Alternatively, an electron beam drawing data generation method for generating drawing data for drawing by multiple drawing using an electron beam on an object to be exposed, determining whether or not multiple drawing is necessary for each pattern to be drawn, There is provided an electron beam drawing data generation method characterized in that a mixed drawing pattern and a non-multiplex drawing pattern can be mixed.
[0017]
Alternatively, an electron beam drawing data generation method for generating drawing data for drawing by multiple drawing using an electron beam on an object to be exposed, wherein whether or not multiple drawing is necessary for each pattern of layout data is determined. A step of determining, as a result of the determination, a step of setting a dose amount of an electron beam to a first value for a pattern not to be multiple-drawn; There is provided an electron beam drawing data generation method characterized by comprising the step of setting to a second value smaller than the first value.
[0018]
Alternatively, an electron beam drawing data generating device that generates drawing data for drawing by multiple drawing using an electron beam on an object to be exposed, determining whether or not multiple drawing is necessary for each pattern to be drawn, There is provided an electron beam drawing data generation apparatus characterized in that it is possible to mix a pattern to be multiplexed and a pattern not to be multiplexed.
[0019]
Or an electron beam drawing data generation program for causing a computer to generate drawing data for drawing on an object by multiple drawing using an electron beam. And determining whether or not to generate drawing data for a pattern to be overdrawn and generation of drawing data for a pattern not to be overdrawn according to the result. An electron beam drawing data generation program is provided.
[0020]
Or an electron beam drawing data generation program for causing a computer to generate drawing data for drawing on an object to be exposed by multiple drawing using an electron beam. A step of determining whether or not drawing is necessary; a step of setting a dose amount of an electron beam to a first value for a pattern that is not subjected to multiple drawing as a result of the determination; And a step of setting the dose amount to a second value that is smaller than the first value.
[0021]
Alternatively, an electron beam drawing apparatus capable of performing drawing by multiple drawing using an electron beam on an object to be exposed, determining whether or not multiple drawing is necessary for each pattern to be drawn, and a pattern for multiple drawing Provided is an electron beam drawing apparatus that includes a drawing data generation unit that can be mixed with a pattern that is not subjected to multiple drawing, and that can perform drawing by the multiple drawing based on the drawing data generated by the drawing data generation unit. .
[0022]
Alternatively, an electron beam drawing apparatus that can perform drawing by multiple drawing using an electron beam on an object to be exposed, and means for determining whether or not multiple drawing is necessary for each pattern of layout data; As a result of the determination, a means for setting the dose amount of the electron beam to a first value for a pattern not to be multiple-drawn, and a dose amount of the electron beam for the pattern to be multiple-drawn as a result of the determination, A drawing data generation unit having a second value that is set to be smaller, and based on the drawing data generated by the drawing data generation unit, a dose amount of an electron beam is set for a pattern that is not subjected to multiple drawing. Drawing is performed with the first value set, and for the pattern to be multiplexed, the electron beam dose is set to the second value and the multiple drawing is performed. Electron beam lithography system data generation method according to symptoms is provided.
[0023]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0024]
FIG. 1 is a flowchart conceptually showing drawing data of multiple drawing generated by the embodiment of the present invention. That is, this figure is a flowchart showing a part of a manufacturing process of a semiconductor integrated circuit, and shows a process of forming an exposure mask M such as a so-called “master reticle”.
That is, layout data LD such as the semiconductor integrated circuit generated in step S1 is generated. In the layout data LD, patterns A to E corresponding to the layout of the integrated circuit are formed. The layout data LD is converted in step S2, and drawing data DD1 and DD2 for multiple drawing using electron beams are generated.
[0025]
In the present invention, all the patterns A to E included in the layout data LD are not necessarily multiplexed. For example, in the case of the specific example illustrated in FIG. 1, the patterns corresponding to the patterns A and D of the layout data LD are formed as the patterns a and d only in the drawing data DD1, and are not formed in the drawing data DD2. That is, the patterns A and E are not multiplexed and are drawn by one exposure. When the pattern has a simple shape and does not require high accuracy and is not divided by the drawing field boundary FI, drawing can be performed by one exposure as described above. As described above, unless a simple pattern is multiplexed, the amount of drawing data can be reduced, and the generation time of drawing data and the exposure time of electron beams can be shortened.
[0026]
In this case, for example, when the multiplicity is “4”, that is, when exposure is performed in four steps, the exposure may be performed in two steps instead of one exposure. That is, the multiplexing is not performed but the multiplicity is lowered. Even in this case, it is possible to obtain effects such as a reduction in the amount of data.
[0027]
On the other hand, when the pattern B of the layout data is viewed, the division forms are the same in the drawing data DD1 and DD2. That is, the pattern B is not a simple shape such as a quadrangle, but needs to be multiplexed depending on conditions such as side length and area. However, as illustrated in FIG. The drawing data DD1 and DD2 are divided in the same direction and divided into the same figure.
[0028]
In such a case, since the same divided figure can be output to the drawing data DD1 and DD2, the data can be compressed. As a compression method, various data compression methods known to those skilled in the art can be used. The simplest method is to share and quote data. That is, when the pattern b2 of the drawing data DD2 is executed, the drawing data amount corresponding to the pattern B can be almost halved by quoting the data of the pattern b1 of the drawing data DD1.
The format of the drawing data differs depending on the electron beam drawing apparatus, and various compressions can be performed according to the format. One method is “modalization”. According to modalization, for example, data is arranged in the order of “graphic type”, “XY coordinates”, “width”, “height”, “dose amount”. For each of these figures, the same one of these parameters may be omitted and only the different ones described. For example, after the figure specified by the parameters of “rectangle”, “X coordinate value”, “Y coordinate value”, “width”, “height”, “dose amount”, only the dose amount differs from these, When drawing a figure with other parameters, only the “dose amount” has to be described.
There is also a method called “repetition method”. For example, when figures of the same shape / dimension are repeatedly arranged at equal intervals, for example, “figure type (for example, rectangle)”, “starting point X coordinate value”, “starting point Y coordinate value”, “width” By enumerating parameters such as “height”, “dose amount”, “arrangement pitch in the X direction”, “arrangement pitch in the Y direction”, “number of repetitions in the X direction”, “number of repetitions in the Y direction” Can be described.
Any of these “modalization” and “repetition method” can be used as the compression method in the present invention.
[0029]
As described above, according to the present invention, only the patterns that need to be multiplexed among the patterns included in the layout data LD are multiplexed, and even when multiplexed, the drawing data is appropriately compressed. The amount of drawing data can be reduced, and the data generation speed and exposure time can be shortened.
[0030]
In the present invention, since the presence or absence of multiplexing and the presence or absence of data compression can be distinguished for each pattern (or figure obtained by dividing the pattern) of the layout data LD, the data conversion process is not unnecessarily complicated and can be performed quickly. Data conversion processing can be ensured.
[0031]
Hereinafter, the drawing data generation method of the present invention will be described in more detail.
FIG. 2 is a flowchart showing an electron beam drawing data generation method according to the embodiment of the present invention.
[0032]
That is, first, layout data LD is input in step S202. Next, in step S204, a predetermined graphic operation is performed on the layout data LD. Each pattern (for example, patterns A to E) included in the layout data LD is recognized by the graphic calculation. If necessary, processing such as scaling and sizing is executed for these patterns.
[0033]
Next, in step S206, whether or not multiple drawing is necessary is determined for each pattern (or divided figure) obtained by the figure calculation. As the determination condition, for example, the shape, minimum width, and area of each pattern (figure) can be used. For example, it can be determined that multiplexing is performed when the minimum width of each pattern is equal to or smaller than a predetermined value. These determination conditions can be appropriately determined according to characteristics of the electron beam drawing apparatus, conditions of the drawing process, and the like.
[0034]
For a pattern that is determined not to require multiple drawing, it is necessary to increase the dose of the electron beam compared to the pattern to be multiple drawn in order to perform exposure only once. Therefore, the process proceeds to step S220, and the dose amount is changed.
[0035]
On the other hand, for patterns determined to require multiple drawing, the process proceeds to step S208, where it is determined whether or not the drawing field boundary FI intersects.
[0036]
If the pattern intersects the drawing field boundary FI (step S208: yes), the divided shape of the pattern also changes when the drawing field boundary FI changes (moves), so that it cannot be output using the compressed expression. Accordingly, the process proceeds to step S214 and step S216, and trapezoidal division processing in the X direction (step S214) and trapezoidal division processing in the Y direction (step S216) are executed.
[0037]
On the other hand, if the pattern does not intersect the drawing field boundary FI (step S208: no), the process proceeds to step S210, and the temporary trapezoidal division process is executed. Further, with respect to the result of the provisional trapezoidal division, in step S212, the presence / absence of a minute figure is determined.
[0038]
When a minute figure is generated by the provisional trapezoidal division (step S212: yes), it is desirable to improve accuracy by drawing different divided figures by multiple drawing. Accordingly, the process proceeds to step S214 and step S216, and trapezoidal division processing in the X direction (step S214) and trapezoidal division processing in the Y direction (step S216) are executed.
[0039]
On the other hand, when the minute figure is not generated by the provisional trapezoidal division (step S212: no), the same divided figure can be output in multiple. Accordingly, the process proceeds to step S218, and multiple output is performed using a compressed representation of the drawing data. As described above, various compression methods including data citation can be used as the compression method.
[0040]
Note that the determination conditions of the minute figure in step S212 can include the width and height of the divided figure, the presence / absence of an adjacent figure, and the like, and can be appropriately determined according to the characteristics of the drawing apparatus, the drawing process conditions, and the like. it can.
[0041]
When the conversion of the selected pattern into drawing data is completed based on the flow described above, the process proceeds to step S222 to determine whether there is a pattern to be processed. If there is a pattern to be processed (step S222: yes), the process returns to step S206 to determine whether or not multiple drawing is necessary for the pattern. On the other hand, when there is no pattern to be processed (step S222: no), since the above-described conversion processing has been completed for all the patterns, the process proceeds to step S224, and each trapezoid division pattern is synthesized. A process of converting to drawing data and outputting it is executed.
[0042]
The drawing data generated in this way is input to the electron beam drawing apparatus, and in accordance with the drawing data, while compressing data, adjusting the dose amount of the electron beam, moving the drawing field boundary FI, etc., the mask material Multiple drawing patterns are drawn on the screen.
[0043]
FIG. 3 is a schematic view illustrating drawing data converted from layout data using the electron beam drawing data generation method of the present invention.
That is, the layout data LD is converted into drawing data DD1 and DD2 for performing multiple drawing with a multiplicity of “2”. Here, the layout data LD is provided with various patterns classified by uppercase alphabets A to E.
[0044]
Among these, the pattern A and the pattern B are simple shapes such as a quadrangle, and their sizes are not so small as to require multiplexing. Therefore, these patterns can be generated only in one of the drawing data DD1 and DD2 without being multiplexed. At this time, the pattern A is generated as the pattern a in the drawing data DD1, while the pattern B is generated as the pattern b in the drawing data DD2.
[0045]
The reason why the pattern b is generated in the drawing data DD2 is to prevent it from crossing the drawing field boundary FI. That is, the drawing field boundaries FI are formed at different positions in the drawing data DD1 and DD2. Therefore, a pattern can be generated in any drawing data so as not to intersect the drawing field boundary FI. If the pattern is generated so as not to cross the drawing field boundary FI in this way, it is not necessary to multiplex the pattern, and the data amount can be reduced.
[0046]
Since these patterns a and b are formed by a single exposure, data is set so that the dose amount of the electron beam is higher than that of a multiplexed pattern described later.
[0047]
Next, the pattern C in the layout data LD is generated by being divided as patterns c1 and c2 in the drawing data DD1 and DD2, respectively. However, since these division patterns are not multiplexed, the amount of drawing data can be reduced. The reason why the pattern c2 is generated in the drawing data DD2 is to prevent the pattern c2 from crossing the drawing field boundary FI.
[0048]
Since these patterns c1 and c2 are also formed by a single exposure, data is set so that the dose amount of the electron beam is higher than that of a multiplexed pattern described later.
[0049]
Next, the pattern D in the layout data does not need to be trapezoidally divided, but is multiplexed and generated as d1 and d2 in the drawing data DD1 and DD2, respectively. This is because these patterns D cross the drawing field boundary FI in both the drawing data DD1 and DD2. Since these patterns d1 and d2 are multiplexed and formed by two exposures, the electron beam dose is set lower than the patterns a, b, c1 and c2.
[0050]
Finally, the pattern E in the layout data LD is multiplexed and generated as the patterns e1 and e2 in the drawing data DD1 and DD2, respectively. Since these patterns e1 and e2 are trapezoidally divided and further minute figures are generated, the drawing data DD1 is divided in the X direction, and the drawing data DD2 is divided in the Y direction. Since these patterns e1 and e2 are also formed by two exposures, the electron beam dose is set low similarly to the patterns d1 and d2.
[0051]
As described above, also in this specific example, the number of drawn figures can be reduced by limiting the patterns to be drawn multiple times. That is, in the case of the pattern of this specific example, the number of drawn figures is reduced from 178 figures to 147 figures compared to the case where all the patterns are drawn in a multiple manner. As a result, the amount of drawing data can be reduced, the conversion time can be shortened, and the exposure time can be shortened.
[0052]
As described above, according to the present invention, when generating drawing data for multiplex drawing, it is determined for each pattern whether or not multiplexing is necessary. Data to be processed by one exposure without multiplexing is generated. Even when multiplexing is necessary, the amount of data can be reduced by performing data compression.
As a result, the amount of drawing data is reduced, and at the same time, resources such as CPU power and memory capacity necessary for data generation are reduced. Therefore, quick verification can be performed using a relatively small computer.
[0053]
FIG. 4 is a schematic view illustrating the appearance of the electron beam drawing data generation apparatus according to the embodiment of the invention. In other words, the main body of the generation device 80 appropriately includes a CPU (central processing unit), a calculation unit incorporating a memory, and a display unit such as a display. Furthermore, recording / reproducing means such as a hard disk magnetic recording / reproducing apparatus is appropriately incorporated.
[0054]
Further, a recording / reproducing apparatus 81 for driving a magnetic recording medium 83 such as a magnetic recording medium or a magneto-optical recording medium, an optical disk drive 82 for driving an optical disk 84 such as a CD (compact disc) or a DVD (digital versatile disc), etc. Prepare.
[0055]
A magnetic recording medium 83 is inserted into the recording / reproducing apparatus 81, and an optical disk 84 is inserted into the optical disc drive 82 from its insertion slot. And data can be entered into the system and installed.
[0056]
Further, by connecting a predetermined drive device, for example, a ROM 85 or a magnetic tape 86 as a memory device can be used.
Still further, a program or data may be downloaded as appropriate via a wired or wireless transmission medium 87 such as a telephone line or a LAN (local area network).
[0057]
According to the drawing data generation apparatus of this specific example, the generation of drawing data described above with reference to FIGS. 1 to 3 can be executed. For example, a circuit for executing the drawing data generation method described above may be realized as hardware, or as a program, that is, software that causes the CPU to execute a series of steps of the verification method of the present invention. May be.
[0058]
Further, layout data to be generated for drawing data may be input from the outside via the magnetic recording medium 83, the optical disk 84, the ROM 85, the magnetic tape 86, the transmission medium 87, and the like. Alternatively, the generation device 80 also serves as a CAD device, generates layout data by executing device layout design, and generates electron beam drawing data for multiple drawing by internally converting the layout data. It may be.
According to the present invention, as described above, multiplexing can be omitted for each pattern, so resources such as CPU power and memory capacity required for the verification process can be reduced. Therefore, quick verification can be performed using a small computer.
[0059]
Next, an electron beam drawing apparatus according to an embodiment of the present invention will be described.
FIG. 5 is a block diagram of the electron beam drawing apparatus according to the embodiment of the present invention. That is, the electron beam drawing apparatus performs exposure by irradiating the mask substrate 15 with the electron beam 1 through the electron gun 2, the diaphragm 3, the electron lens 4, the blanker 5, and the polarizer 8. The computer 11 sends a target position signal to the position control system 12 and controls the servo motor 14 via the motor control system 13 to move the moving table 16. Further, the position control system 12 compares the position signal of the moving table 16 measured by the laser interferometer 17 with the target position signal from the computer 11 and stops the moving table 16 with a predetermined accuracy. The stop position accuracy of the moving table 16 is, for example, about 0.005 μm.
[0060]
In drawing the mask substrate 15, the computer 11 sends a control signal to the deflection control system 7, the deflection control system 7 sends the position information of the electron beam 1 to the deflector 8, and the electron beam 1 is turned on (ON) off. An (OFF) signal is transmitted to the blanking control system 6. The blanker 5 controls the electron beam 1 on (ON) and off (OFF) in response to these on (ON) and off (OFF) signals. That is, the deflector 8 positions the electron beam 1 at a predetermined position on the mask substrate 15, turns off the blanker 5, and sends a drawing signal to the deflector 8 to start drawing.
According to the present invention, in such an electron beam drawing apparatus, the drawing data generation unit 20 is provided as a preceding stage of the computer 11 or as a part of the computer 11. The layout data LD is input to the drawing data generation unit 20, and drawing data for multiple drawing is generated as described above with reference to FIGS. Based on this drawing data, the non-multiplexed pattern is drawn under the condition where the electron beam dose is increased, and the multiplexed pattern is drawn under the condition where the electron beam dose is lowered. Is done.
[0061]
According to this specific example, since multiplexing can be omitted for each pattern, it is possible to provide an electron beam drawing apparatus capable of shortening the drawing time and improving the throughput of the electron beam drawing process.
[0062]
The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples.
[0063]
For example, when the layout data is converted into drawing data, the multiplicity of multiple drawing can be “4” or other numerical values besides “2”. In addition, the contents of the drawing field division, trapezoidal processing, shot division, and other processing orders, the number of divisions, and the shape of the division are appropriately deviated by a person skilled in the art within the scope of the present invention. It is included in the scope of the present invention. The same applies to the vectorization direction, slice direction, and frequency.
[0064]
Further, the present invention is not limited only to the manufacture of a mask, and it is also possible to perform electron beam drawing on an object to be processed in which a resist is formed on a wafer of a semiconductor integrated circuit.
[0065]
In addition, all electron beam drawing apparatuses that include elements of the present invention and whose design can be changed as appropriate by those skilled in the art, and drawing data generation methods, generation apparatuses, and generation programs thereof are included in the scope of the present invention.
[0066]
【The invention's effect】
As described above, according to the present invention, when generating electron beam drawing data using multiple drawing, the number of patterns output to the drawing data is reduced, and the compressed representation of the drawing data is effectively used. It becomes possible to do. As a result, an increase in drawing data amount and drawing time associated with multiple drawing can be suppressed. Costs such as masks can be expected to be reduced, and high-performance, development efficiency and cost reduction of advanced devices such as semiconductor integrated circuits can be promoted, resulting in significant industrial advantages.
[Brief description of the drawings]
FIG. 1 is a flowchart conceptually showing drawing data of multiple drawing generated according to an embodiment of the present invention.
FIG. 2 is a flowchart showing an electron beam drawing data generation method according to an embodiment of the present invention.
FIG. 3 is a schematic view illustrating drawing data converted from layout data using the electron beam drawing data generation method of the present invention.
FIG. 4 is a schematic view illustrating the external appearance of a drawing data generation apparatus according to an embodiment of the invention.
FIG. 5 is a block diagram of an electron beam drawing apparatus according to an embodiment of the present invention.
FIG. 6 is a flowchart showing a part of the manufacturing process of the semiconductor integrated circuit.
FIG. 7 is a schematic diagram conceptually showing multiple drawing.
FIG. 8 is a schematic diagram showing multiple drawing divided into different shapes.
FIG. 9 is a schematic diagram showing multiple drawing with the trapezoid division direction changed.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Electron beam 2 Electron gun 3 Aperture 4 Electron lens 5 Blanker 6 Blanking control system 7 Deflection control system 8 Deflector 11 Computer 12 Position control system 13 Motor control system 14 Servo motor 15 Mask substrate 16 Moving stand 17 Laser interferometer 20 Drawing Data verification unit 80 Verification device 81 Recording / playback device 82 Optical disk drive 83 Magnetic recording medium 84 Optical disk 86 Magnetic tape 87 Transmission media DD, DD1, DD2 Drawing data EL Electron beam drawing apparatus FI Drawing field boundary (boundary line)
LD layout data M Mask

Claims (16)

An electron beam drawing data generation method for generating drawing data for drawing by multiple drawing using an electron beam on an object to be exposed,
An electron beam drawing data generation method, wherein a multiplicity is determined for each pattern to be drawn, and patterns having different multiplicity can be mixed. An electron beam drawing data generation method for generating drawing data for drawing by multiple drawing using an electron beam on an object to be exposed,
An electron beam drawing data generation method characterized by determining whether or not multiple drawing is necessary for each pattern to be drawn and allowing a mixture of a pattern to be multiplexed and a pattern not to be multiplexed to be mixed. An electron beam drawing data generation method for generating drawing data for drawing by multiple drawing using an electron beam on an object to be exposed,
Determining whether or not multiple drawing is necessary for each of the patterns included in the layout data;
As a result of the determination, for a pattern that is not multiple-drawn, a step of setting the electron beam dose to a first value;
As a result of the determination, for a pattern to be multiplexed and drawn, a step of setting a dose amount of the electron beam to a second value smaller than the first value;
An electron beam drawing data generation method comprising: 4. The method of generating electron beam drawing data according to claim 2, wherein the pattern not to be multiplexed is included in any of a plurality of drawing data to be overlaid by the multiple drawing. 5. The drawing data that does not intersect a drawing field boundary among a plurality of drawing data that is overlapped by the multiple drawing is included in the drawing data that does not intersect the drawing. Electron beam drawing data generation method. 6. The pattern according to any one of claims 1 to 5, wherein a pattern having the same division form of the pattern to be overlaid by the multiple drawing and a pattern having a different division form of the pattern to be overlaid by the multiple drawing can be mixed. The electron beam drawing data generation method according to claim 1. 7. The electron beam drawing data generation method according to claim 6, wherein data of patterns having the same division form is compressed. An electron beam drawing data generating device for generating drawing data for drawing by multiple drawing using an electron beam on an object to be exposed,
An electron beam drawing data generation apparatus characterized by determining whether or not multiple drawing is necessary for each pattern to be drawn and allowing a mixture of a pattern to be drawn and a pattern not to be multiplexed to be mixed. An electron beam drawing data generation program for causing a computer to generate drawing data for drawing by multiple drawing using an electron beam on an object to be exposed,
On the computer,
Whether or not multiple drawing is required for each pattern to be drawn, and depending on the result, either generation of drawing data for a pattern to be multiplexed or generation of drawing data for a pattern that is not to be multiplexed An electron beam drawing data generation program characterized by selecting and executing. An electron beam drawing data generation program for causing a computer to generate drawing data for drawing by multiple drawing using an electron beam on an object to be exposed,
On the computer,
A step of determining whether or not multiple drawing is necessary for each of the patterns included in the layout data;
As a result of the determination, for a pattern that is not subjected to multiple drawing, a step of setting the dose amount of the electron beam to a first value;
As a result of the determination, with respect to the pattern to be multiplexed, the step of setting the dose amount of the electron beam to a second value smaller than the first value;
An electron beam drawing data generation program comprising: 11. The electron beam drawing data generation program according to claim 9, wherein the pattern that is not subjected to multiple drawing is included in any of a plurality of drawing data that is overlaid by the multiple drawing. 12. The drawing data according to any one of claims 9 to 11, wherein the non-multiple drawing pattern is included in drawing data that does not intersect a drawing field boundary among a plurality of drawing data that is overlapped by the multiple drawing. An electron beam drawing data generation program. The pattern in which the division form of the pattern to be overlaid by the multiple drawing is the same as the pattern in which the division form of the pattern to be overlaid by the multiple drawing is different can be mixed. The electron beam drawing data generation program according to any one of the above. 14. The electron beam drawing data generation program according to claim 13, wherein the pattern data having the same division form is compressed. An electron beam drawing apparatus capable of drawing on an object to be exposed by multiple drawing using an electron beam,
It is determined whether or not multiple drawing is necessary for each pattern to be drawn, and includes a drawing data generation unit that enables mixing of multiple drawing patterns and non-multiple drawing patterns,
An electron beam drawing apparatus capable of performing drawing by the multiple drawing based on drawing data generated by the drawing data generation unit. An electron beam drawing apparatus capable of drawing on an object to be exposed by multiple drawing using an electron beam,
Means for determining the necessity of multiple drawing for each of the patterns of the layout data;
As a result of the determination, for a pattern not to be multiple-drawn, means for setting the electron beam dose to a first value;
As a result of the determination, for a pattern to be multiplexed and drawn, means for setting a dose amount of the electron beam to a second value smaller than the first value;
A drawing data generation unit having
Based on the drawing data generated by the drawing data generation unit, for the pattern not to be multiple drawn, drawing is performed by setting the dose amount of the electron beam to the first value, and for the pattern to be multiple drawn, An electron beam drawing apparatus characterized in that multiple drawing is performed by setting an electron beam dose to the second value.

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