JP2010212456A - Charged particle beam lithography system, charged particle beam lithography method, and device for selecting data processing system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device which can process data more efficiently even if the SF size and the cluster size are made smaller. <P>SOLUTION: The lithography system 100 includes a control computer 110 which selects either an all-layer conversion system that generates the internal data for the number of times of multiple drawing so that figures corresponding to the number of times of multiple drawing are arranged in an SF or a single-layer conversion system that generates the internal data for single time of multiple drawing so that a figure is arranged in a cluster, a control computer 130 which generates the internal data by one system by processing the data according to a selected system, a storage device 174 which stores the internal data temporarily, a control computer 140 which generates a plurality of shot data for the number of times of multiple drawing by processing the data according to the selected system, and a drawing unit 150 which performs multiple drawing of a pattern on a sample by using the plurality of shot data while shifting the drawing range of each time. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a charged particle beam drawing apparatus, a charged particle beam drawing method, and a data processing method selection apparatus, and more particularly to a data processing method in a drawing apparatus that draws a pattern on a sample while variably shaping an electron beam.

  Lithography technology, which is responsible for the progress of miniaturization of semiconductor devices, is an extremely important process for generating a pattern among semiconductor manufacturing processes. In recent years, with the high integration of LSI, circuit line widths required for semiconductor devices have been reduced year by year. In order to form a desired circuit pattern on these semiconductor devices, a highly accurate original pattern (also referred to as a reticle or a mask) is required. Here, the electron beam (electron beam) drawing technique has an essentially excellent resolution, and is used for producing a high-precision original pattern.

  FIG. 13 is a conceptual diagram for explaining the operation of a conventional variable shaping type electron beam drawing apparatus. The variable shaped electron beam (EB) drawing apparatus operates as follows. In the first aperture 410, a rectangular opening for forming the electron beam 330, for example, a rectangular opening 411 is formed. Further, the second aperture 420 is formed with a variable shaping opening 421 for shaping the electron beam 330 having passed through the opening 411 of the first aperture 410 into a desired rectangular shape. The electron beam 330 irradiated from the charged particle source 430 and passed through the opening 411 of the first aperture 410 is deflected by the deflector, passes through a part of the variable shaping opening 421 of the second aperture 420, and passes through a predetermined range. The sample 340 mounted on a stage that continuously moves in one direction (for example, the X direction) is irradiated. That is, the drawing area of the sample 340 mounted on the stage in which the rectangular shape that can pass through both the opening 411 of the first aperture 410 and the variable shaping opening 421 of the second aperture 420 is continuously moved in the X direction. Drawn on. A method of creating an arbitrary shape by passing both the opening 411 of the first aperture 410 and the variable shaping opening 421 of the second aperture 420 is referred to as a variable shaping method.

  In the drawing apparatus, multiple drawing is performed while shifting the deflection area. At that time, in the drawing apparatus, it is necessary to arrange a figure for each mesh area (subfield: SF) of a deflection area that can be finally deflected by the drawing apparatus. For example, when multiple drawing is performed while shifting the position four times, shot data for four layers is finally required. On the other hand, in the drawing apparatus, shot data is generated by performing a plurality of stages of data processing on the input drawing data. In particular, the amount of data processing and the resulting data amount in the data processing at the stage of placing a figure (data development) are large. For this reason, if the graphic layout is directly performed on the SFs for the number of times of multiplexing, the amount of calculation and the amount of data for such data processing become enormous, and therefore, a device has been devised to cope with these.

  One of them is a method of dividing a chip data cell into cluster areas divided in a size smaller than SF and arranging figures (data development) in the cluster area (see, for example, Patent Document 1). Then, in the subsequent data processing, the cluster necessary for each SF is extracted and arranged (cluster expansion) to create shot data for each drawing. In such a method, at the stage of placing a figure, it is sufficient to create data for one drawing (one pass) of multiple drawing, so compared with the conventional case where data for a number of times of multiple drawing is directly expanded into SF. The amount of data processing and the amount of data could be reduced. Actually, the SF size is set to a size slightly smaller than the deflection area size that can be deflected by the drawing apparatus in consideration of the margin. The cluster size needs to be set so that “SF size + cluster size + α <actual deflection area size” in order to prevent pattern omission at the time of drawing. The cluster size is set so that cluster size ≦ (SF size / multiplicity).

  Here, with the recent miniaturization of patterns, it is required to reduce the actual deflection region size. As the deflection area size becomes smaller, the SF size and cluster size need to be reduced accordingly. As a result, the number of generated clusters increases.

  FIG. 14 is a diagram illustrating an example of the relationship between the SF size, the cluster size, and the cluster number increase rate. In FIG. 14, when the SF size is 64 μm, for example, the cluster size in one pass (one-time drawing: multiplicity 1) is 32 μm, for example. The cluster size in 2 passes (multiplicity 2) is 21.3 μm, for example, and the cluster number increase rate is 2.25 times, and the cluster size in 4 passes (multiplicity 4) is 12.8 μm, for example, and the cluster number increase rate is 6.25 times. When the SF size is set to 32 μm, for example, the cluster size in one pass (one-time drawing: multiplicity 1) is set to 16 μm, for example, and the cluster number increase rate is quadrupled. The cluster size in 2 passes (multiplicity 2) is, for example, 10.7 μm, and the cluster number increase rate is 9 times. The cluster size in 4 passes (multiplicity 4) is, for example, 6.4 μm, and the cluster number increase rate is 25 times. It becomes. Further, when the SF size is set to 8 μm, for example, the cluster size in one pass (one-time drawing: multiplicity 1) is, for example, 4 μm, and the cluster number increase rate is 64 times. The cluster size in 2 passes (multiplicity 2) is, for example, 2.7 μm, and the cluster number increase rate is 144 times, and the cluster size in 4 passes (multiplicity 4) is, for example, 1.6 μm, and the cluster number increase rate is 400 times. It becomes.

  As described above, as the SF size and the cluster size become smaller, on the other hand, when the processing method of allocating the clusters to the SF is adopted, the increase rate of the number of clusters greatly increases. As the number of clusters increases, the graphic data development processing amount and data amount to the clusters also increase. Furthermore, the amount of processing for allocating clusters to the SF increases. As a result, there is a problem that throughput may be deteriorated. On the other hand, if a processing method for directly placing graphics on the SFs for the number of times of multiplexing is employed, data processing and the amount of data for the number of times of multiplexing occur, which may lead to degradation of the throughput. was there.

Japanese Patent Laid-Open No. 11-274036

  As described above, as the SF size and the cluster size become smaller, even when the processing method of the drawing apparatus adopts a processing method in which clusters are arranged in SFs, a processing method in which graphics are directly arranged in SFs corresponding to the number of times of multiplexing. Even in the case of adopting, there is a problem that throughput may be deteriorated if it is conventional. However, conventionally, a method for solving such a problem has not been established.

  An object of the present invention is to provide an apparatus and method capable of overcoming such a problem and performing more efficient data processing even when the SF size and the cluster size are reduced.

A charged particle beam drawing apparatus according to one embodiment of the present invention includes:
A cell composed of one or more figures inputs drawing data defined in the chip area, and the drawing data is used to draw a figure in a corresponding small area of a plurality of first small areas obtained by virtually dividing the chip area. A first method for generating a plurality of first internal data corresponding to the number of times of multiple drawing so as to be arranged for the number of times of multiple drawing, and a corresponding small region of a plurality of second small regions obtained by virtually dividing the cell A method selection unit that selects one of the second methods for generating second internal data for one time of multiple drawing so as to arrange a graphic;
An internal for processing the drawing data in accordance with one of the first and second methods according to the selected result to generate one of the plurality of first internal data and second internal data A data generator;
A storage device for temporarily storing one of a plurality of first internal data and second internal data;
One of the plurality of first internal data and the second internal data is read from the storage device, and one of the plurality of first internal data and the second internal data is processed according to the selected result, and multiplexed. A shot data generation unit that generates a plurality of shot data for the number of times of drawing;
Using a plurality of shot data, a drawing unit that draws multiple patterns on the sample by irradiating a charged particle beam while shifting the drawing range each time,
It is provided with.

  In addition, it is preferable that the method selection unit selects the second method when the storage capacity of the storage device is not equal to or greater than the threshold value. It is preferable that the first method can be selected when the threshold value is exceeded.

  In addition, it is preferable that the method selection unit calculates the cell reference rate using the drawing data, and selects the first method when the cell reference rate is equal to or less than a threshold value. It is preferable that the second method can be selected when it is not less than the threshold value. In particular, it is preferable to select the first method when the storage capacity of the storage device is equal to or greater than the threshold value of the storage capacity and the cell reference rate is equal to or less than the threshold value of the reference rate.

The charged particle beam drawing method of one embodiment of the present invention includes:
A cell composed of one or more figures inputs drawing data defined in the chip area, and the drawing data is used to draw a figure in a corresponding small area of a plurality of first small areas obtained by virtually dividing the chip area. A first method for generating a plurality of first internal data corresponding to the number of times of multiple drawing so as to be arranged for the number of times of multiple drawing, and a corresponding small region of a plurality of second small regions obtained by virtually dividing the cell Selecting one of a second method of generating second internal data for one time of multiple drawing so as to arrange a figure;
A step of generating one of a plurality of first internal data and second internal data by processing the drawing data in accordance with one of the first and second methods according to the selected result. When,
Temporarily storing one of a plurality of first internal data and second internal data in a storage device;
One of the plurality of first internal data and the second internal data is read from the storage device, and one of the plurality of first internal data and the second internal data is processed according to the selected result, and multiplexed. A step of generating a plurality of shot data corresponding to the number of times of drawing;
Using multiple shot data, irradiating a charged particle beam to the drawing region of the sample while shifting the drawing range of each time, and a step of multiplex drawing the pattern;
It is provided with.

A data processing method selection device according to an aspect of the present invention includes:
A storage device in which cells composed of one or more figures store drawing data defined in a chip area;
The drawing data is input, and using the drawing data, a plurality of multiple drawing times are arranged so that the figure is arranged by the number of times of multiple drawing in the corresponding small area of the plurality of first small areas obtained by virtually dividing the chip area. The first method for generating the first internal data and the second internal data for one-time multiple drawing so that the figure is arranged in the corresponding small region of the plurality of second small regions obtained by virtually dividing the cell A method selection unit that selects one of the second methods for generating
An output unit for outputting the selected result; and
It is provided with.

  According to the present invention, more efficient data processing can be performed even when the SF size and the cluster size are small. As a result, throughput can be improved.

1 is a conceptual diagram illustrating a configuration of an electron beam drawing apparatus according to Embodiment 1. FIG. 6 is a conceptual diagram for explaining multiple drawing in Embodiment 1. FIG. FIG. 3 is a conceptual diagram showing an example of a sub deflection region, SF, and clusters in the first embodiment. 6 is a conceptual diagram illustrating an example of a flow of data processing of layout data in the first embodiment. FIG. 6 is a diagram illustrating an example of a relationship between a cluster or SF division number increase rate and a cluster size according to Embodiment 1. FIG. FIG. 3 is a flowchart diagram of a main process of an all-layer conversion method in the first embodiment. FIG. 4 is a flowchart of a main process of the single layer conversion method in the first embodiment. FIG. 3 is a flowchart of a main process of the drawing method in the first embodiment. FIG. 6 is a diagram showing an internal flow of method selection in the first embodiment. It is a figure which shows the internal flow of the estimation process (S20) in Embodiment 1. FIG. 6 is a diagram showing an example of a data file format in Embodiment 1. FIG. 6 is a diagram illustrating an example of a relationship between a cell reference rate and a data output amount in the first embodiment. FIG. It is a conceptual diagram for demonstrating operation | movement of the conventional variable shaping type | mold electron beam drawing apparatus. It is a figure which shows an example of the relationship between SF size, cluster size, and a cluster number increase rate.

  Hereinafter, in the embodiment, a configuration using an electron beam will be described as an example of a charged particle beam. However, the charged particle beam is not limited to an electron beam, and a beam using charged particles such as an ion beam may be used.

Embodiment 1 FIG.
The inventor uses a concept of a cluster rather than a processing method (hereinafter referred to as a single layer conversion method) in which a figure is expanded into a cluster and the cluster is expanded into SFs corresponding to multiple times depending on the layout of input drawing data. It has been found that the processing method (hereinafter referred to as an all-layer conversion method) that directly expands a figure into SFs corresponding to the number of multiple times can shorten the processing time. Conversely, it has been found that the processing time may be shortened in the single layer conversion method than in the full layer conversion method depending on the layout of input drawing data. For example, when the number of array cells is small or the number of references of the same cell is small, the all-layer conversion method can shorten the processing time. In the first embodiment, an apparatus capable of selecting a single-layer conversion method or an all-layer conversion method according to the situation will be described.

  FIG. 1 is a conceptual diagram showing the configuration of the electron beam drawing apparatus according to the first embodiment. In FIG. 1, the drawing apparatus 100 includes a drawing unit 150 and a control unit 160. The drawing apparatus 100 is an example of a variable shaped charged particle beam drawing apparatus. The drawing apparatus 100 draws a pattern on the sample 101 using the electron beam 200. The drawing unit 150 includes an electron column 102 and a drawing chamber 103. In the electron column 102, there are an electron gun 201 (emission unit), an illumination lens 202, a first aperture 203, a projection lens 204, a deflector 205, a second aperture 206, an objective lens 207, a sub deflector 208, and a main deflector. A deflector 209 is arranged. In the drawing chamber 103, an XY stage 105 is disposed. On the XY stage 105, a sample 101 to be drawn is arranged. The drawing unit 150 is controlled by the control unit 160.

  The control unit 160 includes control computers 110, 120, 130, and 140, storage devices 170, 172, 174, and 176 such as a magnetic disk device, and a control circuit 178. The control computers 110, 120, 130, and 140, storage devices 170, 172, 174, and 176 such as a magnetic disk device, and a control circuit 178 are connected to each other via a bus 162. The control circuit 178 is connected to the drawing unit 150.

  In the control computer 110, a data reading unit 10, a resource status determination unit 12, a processing method determination unit 14, and a data output unit 16 are arranged. Each configuration of the data reading unit 10, the resource status determination unit 12, the processing method determination unit 14, and the data output unit 16 may be configured as a processing function executed by software. Or you may comprise each such structure with the hardware by an electric circuit. Or you may make it implement by the combination of the hardware and software by an electrical circuit. Alternatively, a combination of such hardware and firmware may be used. Further, in the case of implementation by software or in combination with software, information input to the control computer 110 that executes processing or information during and after arithmetic processing is stored in a memory (not shown) each time.

  In the control computer 120, a data reading unit 20, a determination unit 22, a localization processing unit 24, and a data output unit 26 are arranged. Each configuration of the data reading unit 20, the determination unit 22, the localization processing unit 24, and the data output unit 26 may be configured as a processing function executed by software. Or you may comprise each such structure with the hardware by an electric circuit. Or you may make it implement by the combination of the hardware and software by an electrical circuit. Alternatively, a combination of such hardware and firmware may be used. Further, in the case of implementation by software or in combination with software, information input to the control computer 120 that executes the processing or information during and after the arithmetic processing is stored in a memory (not shown) each time.

  In the control computer 130, a data reading unit 30, a determination unit 32, a subfield (SF) dividing unit 34, a cluster dividing unit 36, and a data output unit 38 are arranged. Each configuration of the data reading unit 30, the determination unit 32, the subfield (SF) division unit 34, the cluster division unit 36, and the data output unit 38 may be configured as a processing function executed by software. Or you may comprise each such structure with the hardware by an electric circuit. Or you may make it implement by the combination of the hardware and software by an electrical circuit. Alternatively, a combination of such hardware and firmware may be used. Further, in the case of implementation by software or in combination with software, information input to the control computer 130 that executes the process or information during and after the calculation process is stored in a memory (not shown) each time.

  In the control computer 140, a data reading unit 40, a determination unit 42, a cluster development unit 44, a shot data generation unit 46, and a data output unit 48 are arranged. Each configuration of the data reading unit 40, the determination unit 42, the cluster development unit 44, the shot data generation unit 46, and the data output unit 48 may be configured as a processing function executed by software. Or you may comprise each such structure with the hardware by an electric circuit. Or you may make it implement by the combination of the hardware and software by an electrical circuit. Alternatively, a combination of such hardware and firmware may be used. Further, in the case of implementation by software or in combination with software, information input to the control computer 140 that executes processing or information during and after the arithmetic processing is stored in a memory (not shown) each time.

  Further, the inside of the electron column 102 and the drawing chamber 103 in which the XY stage 105 is arranged are evacuated by a vacuum pump (not shown) to form a vacuum atmosphere in which the pressure is lower than the atmospheric pressure.

  In FIG. 1, description of components other than those necessary for explaining the first embodiment is omitted. The drawing apparatus 100 may normally include other necessary configurations.

  FIG. 2 is a conceptual diagram for explaining multiple drawing in the first embodiment. In FIG. 2, a part of layout data (drawing data) will be described. In FIG. 2, the drawing area of the layout data 50 is divided into, for example, strip-shaped frame areas 52 and has a data structure. FIG. 2 shows a case where four cells 54 are arranged in three adjacent frame regions. Such a layout area is re-divided into stripe areas 56 serving as a drawing unit (drawing range) for drawing. The width in the short direction of the stripe region 56 is preferably set to a deflectable width of the main deflector 209, for example. In the case of drawing such a pattern twice, for example (multiplicity 2), the first drawing and the second drawing are generally performed each time at a position that is half the width of the stripe region 56 in the short direction. Multiple drawing is performed while shifting the drawing position.

  Specifically, after the stripe region 56a indicated by S1 in the first layer is drawn, the drawing position is relatively shifted by the movement of the XY stage by 1/2 of the width of the stripe region 56 in the short direction. This time, the stripe region 56d indicated by S2 of the second layer to be overlaid is drawn. Similarly, the stripe region 56b shown by S3 of the first layer is drawn with a shift of ½ of the width of the stripe region 56 in the short direction. Similarly, the stripe region 56e indicated by S4 of the second layer is drawn with a shift of ½ of the width of the stripe region 56 in the short direction. Similarly, the stripe region 56c indicated by S5 of the first layer is drawn with a shift of ½ of the width of the stripe region 56 in the short direction. As described above, multiple drawing with multiplicity 2 is performed.

  Therefore, data of the stripe regions 56a, 56b, and 56c is created as the first layer data. In addition, data of the stripe regions 56d and 56e is created as the second layer data.

  FIG. 3 is a conceptual diagram showing an example of the sub deflection region, SF, and cluster in the first embodiment. The layout area (chip area) 50 is virtually divided into mesh-like SFs 62 (first small areas) having a slightly smaller size than the sub deflection area 64 that can be deflected by the sub deflector 208. The cell 61 is virtually divided into mesh-like clusters 60 (second small regions) having a size smaller than that of the SF 62. The cluster size is set so that “SF size + cluster size + α <sub-deflection area size” in order to prevent pattern omission at the time of drawing. The cluster size is set so that cluster size ≦ (SF size / multiplicity).

  FIG. 4 is a conceptual diagram showing an example of the flow of layout data processing in the first embodiment. This will be described with reference to the example of FIG. As the first layer data, data of the stripe regions 56a, 56b, and 56c is created. First, as a localization process, the cells 54 located in each stripe region 56 are distributed (localized). For example, the cells 54b and 54c are distributed in the stripe region 56a. Cells 54a and 54c are distributed to the stripe region 56b. Cells 54d are distributed to the stripe region 56c. Next, as the graphic conversion process, in the case of the all-layer conversion method, the graphic in the cell 54 is arranged (data development) in the corresponding SF 62. In the case of the single layer conversion method, the cell is virtually divided into a plurality of clusters 60, and the figure in the cell 54 is arranged (data development) in the corresponding cluster 60. For the cell portion that protrudes from the stripe region 56, data expansion is not performed by any method except for a predetermined margin region. In the subsequent shot data conversion process, in the case of the single layer conversion method, the cluster 60 in which the figure in the cell 54 is arranged (data expansion) in the corresponding SF is extracted, and shot data is generated. In the case of the all-layer conversion method, since the figure is already arranged in the corresponding SF, shot data is generated in that state.

  Similarly, data of the stripe regions 56d and 56e is created as the second layer data. First, as the localization process, in the case of the all-layer conversion method, the cells 54 located in each stripe region 56 are distributed (localized). For example, the cell 54a, the cell 54b, and the cell 54c are distributed in the stripe region 56d. Cells 54a, 54c, and 54d are distributed to the stripe region 56e. In the case of the single layer conversion method, in particular, the localization process is not performed for each layer. Next, as the graphic conversion process, in the case of the all-layer conversion method, the graphic in the cell 54 is arranged (data development) in the corresponding SF 62. For the cell portion that protrudes from the stripe region 56, data expansion is not performed by any method except for a predetermined margin region. In the case of the single layer conversion method, the graphic conversion process is not particularly performed for each layer. In the subsequent shot data conversion process, in the case of the single layer conversion method, the cluster 60 in which the figure in the cell 54 is arranged (data expansion) in the corresponding SF is extracted, and shot data is generated. In the case of the all-layer conversion method, since the figure is already arranged in the corresponding SF, shot data is generated in that state.

  FIG. 5 is a diagram illustrating an example of the relationship between the cluster or SF division number increase rate and the cluster size in the first embodiment. In FIG. 5, the vertical axis represents the cluster or SF division number increase rate, and the horizontal axis represents the cluster size. For comparison with the single layer conversion method, the all layer conversion method shows the increase rate of the number of SF divisions at the SF size corresponding to each cluster size. In the single layer conversion method, the rate of increase in the number of clusters increases as the cluster size decreases. As the cluster size increases, the cluster division number increase rate decreases, and the SF division number increase rate falls below a certain cluster size. Conversely, as the cluster size decreases, the cluster division number increase rate increases and exceeds the SF division number increase rate from a certain cluster size. Therefore, when drawing data with a small number of reference times of the same cell or drawing data with a small number of array cells is used, it can be said that the data processing amount is smaller when data processing is performed by the all-layer conversion method. Conversely, when drawing data having a large number of reference times of the same cell or drawing data having a large number of array cells is used, it can be said that the data processing amount is smaller when data processing is performed by the single layer conversion method. Therefore, in the first embodiment, the single layer conversion method and the full layer conversion method are selected depending on the situation, and after the selection, data processing is performed according to the selected method.

  FIG. 6 is a flowchart of a main process of the all-layer conversion method according to the first embodiment. The storage device 170 stores layout data (drawing data). When such layout data is processed by the all-layer conversion method, the localization process (S200), the figure conversion process (S300), and the shot conversion process (S400) are processed in parallel for the number of times of multiplexing. Therefore, the amount of data after the localization step (S200) exists for the number of times of multiplexing. Therefore, the internal data A for the number of times of multiplexing is temporarily stored in the storage device 172. Similarly, the amount of data after the graphic conversion step (S300) exists for the number of times of multiplexing. Therefore, the internal data B (first internal data) for the number of times of multiplexing is temporarily stored in the storage device 174. The amount of data after the shot conversion step (S400) exists for the number of times of multiplexing. Therefore, shot data for the number of times of multiplexing is temporarily stored in the storage device 176.

  FIG. 7 is a flowchart of a main process of the single layer conversion method according to the first embodiment. The storage device 170 is the same in that layout data (drawing data) is stored. When data processing is performed on the layout data by the single layer conversion method, data processing for one drawing is performed in the localization process (S200) and the graphic conversion process (S300). In the shot conversion step (S400), data processing is performed for the number of times of multiplexing. Therefore, the amount of data after the localization process (S200) exists for one drawing. Therefore, the internal data A for one drawing is temporarily stored in the storage device 172. Similarly, the amount of data after the graphic conversion step (S300) exists for one drawing. Accordingly, the internal data B (second internal data) for one drawing is temporarily stored in the storage device 174. The amount of data after the shot conversion step (S400) exists for the number of times of multiplexing. Therefore, shot data for the number of times of multiplexing is temporarily stored in the storage device 176.

  In the first embodiment, layout data conversion processing is performed using the drawing apparatus 100 that can perform data processing by either the single-layer conversion method or the full-layer conversion method as described above.

  FIG. 8 is a flowchart of a main process of the drawing method according to the first embodiment. The storage device 170 stores layout data (drawing data) in which at least one cell composed of one or more graphics is defined in the chip area. The drawing method according to the first embodiment includes a method selection process (S100), a localization process (S200), a graphic conversion process (S300), and a shot conversion process (selecting one of a single-layer conversion system and an all-layer conversion system). A series of steps such as S400) and a drawing step (S500) are performed.

  As the method selection step (S100), the data reading unit 10 reads layout data from the storage device 170 (S102). Then, the resource status determination unit 12 and the processing method determination unit 14 select either the full layer conversion method or the single layer conversion method using the drawing data (S104). At least one of the resource status determination unit 12 and the processing method determination unit 14 is an example of a method selection unit. The storage device 170 and the control computer 110 connected by a bus are an example of a method selection device.

  FIG. 9 is a diagram showing an internal flow of method selection in the first embodiment. In FIG. 9, the resource status determination unit 12 determines whether or not the storage capacity of at least one of the storage devices 172 and 174 is equal to or greater than a preset threshold value (first threshold value) (S10). In particular, it is preferable to determine whether or not the storage capacity of the storage device 174 that temporarily stores the data after graphic conversion having a large amount of data is equal to or greater than the threshold value. Then, when the storage capacity is not equal to or greater than the threshold value, the single layer conversion method is selected. This is because the full-layer conversion method cannot be used unless the storage capacity of the storage device 174 is sufficient. If the storage capacity is greater than or equal to the threshold, the process proceeds to S12. The processing method determination unit 14 determines whether or not an estimator (estimation) function is arranged (S12). When the estimator function is not arranged, the all-layer conversion method is selected. When the estimator function is arranged, the process proceeds to S20.

  FIG. 10 is a diagram showing an internal flow of the estimation step (S20) in the first embodiment. In FIG. 10, the processing method determination unit 14 calculates a cell reference rate using layout data (S22). The cell reference rate indicates the ratio of the reference number of cells that are repeatedly referred to the total number of cells arranged in a predetermined area. For example, it may be the ratio of the reference number of cells repeatedly referred to the total number of cells arranged in the chip area. Or it is suitable also as a ratio of the reference number of the cell referred repeatedly to the total cell number arrange | positioned in a stripe area | region. Alternatively, when the stripe region is further divided into a plurality of blocks, it is also preferable as a ratio of the reference number of cells repeatedly referred to the total number of cells arranged in the block. In particular, in the localization step (S200), cells are arranged for each processing region such as a stripe region or a block region, and thereafter data processing is performed for each processing region, so that the total number of cells arranged in the localized processing region is determined. The ratio of the number of cells that are referred to repeatedly is more preferable.

  FIG. 11 is a diagram showing an example of the format of the data file in the first embodiment. In FIG. 11, for example, a cell arrangement data file, a link file, and a cell pattern data file are input to the storage device 170 as layout data. In the cell arrangement data file, for example, a block (0, 0) header, cell arrangement data (1), cell arrangement data (2), cell arrangement data (3), and cell arrangement data (4) are defined following the file header. Subsequently, a block (0, 1) header, cell arrangement data (1), and cell arrangement data (2) are defined. In the link file, link data (1), link data (2), link data (3),... Are defined following the file header. In the cell pattern data file, for example, a pattern data segment (1) header, cell pattern data (1), cell pattern data (2), and cell pattern data (3) are defined following the file header. The link data (1) is linked to the cell pattern data (1). The link data (2) is linked to the cell pattern data (2). Link data (3) is linked to cell pattern data (3). By linking the cell arrangement data and the cell pattern data as described above, it is only necessary to create one piece of data for each cell, so that the amount of data can be reduced. In the example of FIG. 11, the reference number of the cell pattern data (1) is 3, the reference number of the cell pattern data (2) is 2, and the reference number of the cell pattern data (3) is 1.

  FIG. 12 is a diagram illustrating an example of the relationship between the cell reference rate and the data output amount in the first embodiment. In the all-layer conversion method, since the figure is directly arranged in the SF, there is no difference in the data amount depending on the cell reference rate. On the other hand, in the single layer conversion method, it is only necessary to extract and arrange corresponding clusters, so that the data amount can be reduced as the cell reference rate increases. Conversely, when the cell reference rate is small, the data amount is larger than that of the full-layer conversion method at a certain threshold. As the amount of data increases, the amount of data processing increases and the processing time increases accordingly. Therefore, in the first embodiment, the cell reference rate is used as a determination material when selecting one of the two processing methods.

  Then, the processing method determination unit 14 determines whether or not the calculated cell reference rate is equal to or less than a preset threshold value (second threshold value). When the cell reference rate is equal to or lower than a preset threshold, it is determined that the data processing by the all-layer conversion method is faster than the data processing by the single-layer conversion method. Conversely, if the cell reference rate is not less than or equal to a preset threshold value, it is determined that the data processing by the single layer conversion method is faster than the data processing by the full layer conversion method. Then, it progresses to S30 of FIG.

  The processing method determination unit 14 determines whether or not the all-layer conversion method is fast (S30). When the full-layer conversion method is fast, the full-layer conversion method is selected. If the full layer conversion method is not fast, the single layer conversion method is selected.

  The data output unit 16 outputs the selected result. As described above, it is determined which one of the all-layer conversion method and the single-layer conversion method is advantageous, and the result can be acquired. Hereinafter, data processing is performed in accordance with the result.

  As the localization step (S200), the data reading unit 20 reads layout data from the storage device 170 (S202). Also, the result of the method selection process is input. The determination unit 22 determines whether the selected result is an all-layer conversion method (S204). In the case of the all-layer conversion method, the localization processing unit 24 localizes the layout data in parallel by the number of multiplicity (the number of times of multiple drawing) (S206). In the case of the single layer conversion method, the layout data is localized for one drawing (S208). The localization processing unit 24 distributes a corresponding cell for each processing area such as a stripe area or a block area obtained by further dividing the stripe area. The data output unit 26 outputs the data for each processing area that has been localized to the storage device 172 (S210). The storage device 172 temporarily stores data for each processing area as internal data A. Therefore, in the case of the full-layer conversion method, a plurality of internal data A corresponding to the multiplicity is stored. In the case of the single layer conversion method, the internal data A for one drawing is stored.

  As the graphic conversion step (S300), the data reading unit 30 reads the internal data A for each processing area from the storage device 172 (S302). The determination unit 32 determines whether the selected result is an all-layer conversion method (S304). If the determination result is the all-layer conversion method, the process proceeds to S306, and if not, the process proceeds to S308. The SF dividing unit 34 virtually divides the chip area into a plurality of mesh-like SFs, and performs multiple drawing so that graphics corresponding to each SF are arranged (data development) for each processing area by the number of times of multiple drawing. A plurality of internal data B corresponding to the number of times is generated. The cluster division unit 36 virtually divides each cell in the processing area into a plurality of clusters for each processing area, and arranges internal data B for multiple drawing so as to arrange (data development) a figure corresponding to each cluster. Is generated. The data output unit 38 outputs the internal data B for each processing area to the storage device 174 (S310). The storage device 174 temporarily stores the internal data B for each processing area. Therefore, in the case of the all-layer conversion method, a plurality of internal data B corresponding to the multiplicity is stored. In the case of the single layer conversion method, the internal data B for one drawing is stored.

  As described above, at least one of the control computers 120 and 130 processes the layout data in accordance with either the full-layer conversion method or the single full-layer conversion method corresponding to the selected result, One of the plurality of internal data B in the layer conversion method and the internal data B in the single full layer conversion method is generated. At least one of the control computers 120 and 130 is an example of an internal data generation unit.

  As the shot conversion step (S400), the data reading unit 40 reads the internal data B for each processing area from the storage device 174 (S402). The determination unit 42 determines whether or not the selected result is an all-layer conversion method (S404). If the determination result is the all-layer conversion method, the process proceeds to S408, and if not, the process proceeds to S406. In the case of the single layer conversion method, since the data for the multiplicity number has not yet been generated, the cluster expansion unit 44 extracts clusters corresponding to each SF for the multiplicity number for each processing region, and arranges the data (data expansion). (S406). Thereby, data corresponding to the internal data B in the case of the all-layer conversion method is generated. Since the internal data for the multiplicity is already generated, the shot data generation unit 46 divides the figure of the internal data into shot-size figures and generates a plurality of shot data for the number of times of multiple drawing. (S408). The data output unit 48 outputs a plurality of generated shot data for the number of times of multiple drawing to the storage device 176. The storage device 176 temporarily stores a plurality of shot data.

  As described above, the control computer 140 reads one of the plurality of internal data B in the full-layer conversion method and the internal data B in the single full-layer conversion method from the storage device 174, and selects all the layers according to the selected result. In accordance with either the conversion method or the single full layer conversion method, one of the plurality of internal data B in the full layer conversion method and the internal data B in the single full layer conversion method is processed, and multiple drawing is performed. A plurality of shot data corresponding to the number of times is generated. The control computer 140 is also an example of a shot data generation unit.

  As described above, in Embodiment 1, data processing can be performed more efficiently by selecting a single-layer conversion method and an all-layer conversion method depending on the situation and performing data processing using the selected method. it can. Therefore, data processing can be performed in a shorter time than conventional. As a result, throughput can be improved. In other words, the optimum throughput according to the layout can be realized.

  As the drawing step (S500), the control circuit 178 reads shot data of the corresponding drawing of the multiple drawing from the storage device 176. Then, the drawing unit 150 performs the drawing at that time. Then, the next drawing is performed. As described above, the drawing unit 150 performs multiple drawing of the pattern on the sample 101 by using the plurality of shot data and irradiating the electron beam 200 while shifting the drawing range of each time. Specifically, it operates as follows.

  An electron beam 200 is emitted from the electron gun 201. The electron beam 200 emitted from the electron gun 201 illuminates the entire first aperture 203 having a rectangular hole (opening), for example, by the illumination lens 202. Here, the electron beam 200 is first formed into a rectangle, for example, a rectangle. Then, the electron beam 200 of the first aperture image that has passed through the first aperture 203 is projected onto the second aperture 206 by the projection lens 204. The position of the first aperture image on the second aperture 206 is controlled by the deflector 205, and the electron beam 200 of the first aperture image is generated by using a part of the opening end of the second aperture 206. Molded. Beam shaping can change the beam shape and dimensions. The electron beam 200 of the second aperture image that has passed through the opening of the second aperture 206 is focused by the objective lens 207, deflected by the multi-stage deflector of the sub deflector 208 and the main deflector 209, and moved. The sample 101 to which the resist on the XY stage 105 arranged as possible is applied is irradiated. In this way, a desired pattern is drawn on the sample 101 by irradiating the electron beam 200 of the shaped second aperture image onto a desired position.

Embodiment 2. FIG.
In Embodiment 1, the function of selecting the single-layer conversion method and the full-layer conversion method is installed in the drawing apparatus 100, but the present invention is not limited to this. The function of selecting the single-layer conversion method and the full-layer conversion method may be arranged off-line from the drawing apparatus 100. That is, a storage device similar to the storage device 170 in FIG. 1 and the control computer 110 may be connected by a bus, and such a configuration may be arranged independently as a method selection device outside the drawing device 100.

  The embodiments have been described above with reference to specific examples. However, the present invention is not limited to these specific examples.

  In addition, although descriptions are omitted for parts and the like that are not directly required for the description of the present invention, such as a device configuration and a control method, a required device configuration and a control method can be appropriately selected and used. For example, although the description of the control unit configuration for controlling the drawing apparatus 100 is omitted, it goes without saying that the required control unit configuration is appropriately selected and used.

  In addition, all charged particle beam drawing apparatuses, charged particle beam drawing methods, and data processing system selection apparatuses that include elements of the present invention and whose design can be changed as appropriate by those skilled in the art are included in the scope of the present invention.

10, 20, 30, 40 Data reading unit 12 Resource status determination unit 14 Processing method determination unit 16, 26, 38, 48 Data output unit 22, 32, 42 Determination unit 24 Localization processing unit 34 SF division unit 36 Cluster division unit 44 Cluster development unit 46 Shot data generation unit 50 Layout area 100 Drawing device 102 Electronic lens barrel 103 Drawing room 105 XY stage 110, 120, 130, 140 Control computer 150 Drawing unit 160 Control unit 162 Bus 170, 172, 174, 176 Storage device 178 Control circuit 200 Electron beam 201 Electron gun 202 Illumination lenses 203 and 410 First aperture 204 Projection lens 205 Deflector 206 and 420 Second aperture 207 Objective lens 208 Sub deflector 209 Main deflector 330 Electron beam 340 Sample 411 Opening 42 1 variable shaped aperture 430 charged particle source

Claims (5)

A cell constituted by one or more figures inputs drawing data defined in a chip area, and uses the drawing data to correspond to a small area corresponding to a plurality of first small areas obtained by virtually dividing the chip area. A first method for generating a plurality of first internal data corresponding to the number of times of multiple drawing so as to arrange the figure by the number of times of multiple drawing; and a plurality of second small areas obtained by virtually dividing the cell A method selection unit that selects any one of the second method for generating the second internal data for one time of the multiple drawing so as to arrange the figure in a corresponding small region;
One of the plurality of first internal data and the second internal data is processed by performing data processing on the drawing data in accordance with one of the first and second methods according to the selected result. An internal data generation unit for generating
A storage device for temporarily storing one of the plurality of first internal data and the second internal data;
One of the plurality of first internal data and the second internal data is read from the storage device, and one of the plurality of first internal data and the second internal data is stored as data according to a selected result. A shot data generation unit that processes and generates a plurality of shot data for the number of times of the multiple drawing;
Using the plurality of shot data, a drawing unit that multiplex-draws a pattern on the sample by irradiating a charged particle beam while shifting the drawing range each time;
A charged particle beam drawing apparatus comprising:   The charged particle beam drawing apparatus according to claim 1, wherein the method selection unit selects the second method when a storage capacity of the storage device is not equal to or greater than a threshold value.   The method selection unit calculates the cell reference rate using the drawing data, and selects the first method when the cell reference rate is equal to or lower than a threshold value. 3. The charged particle beam drawing apparatus according to 2. A cell constituted by one or more figures inputs drawing data defined in a chip area, and uses the drawing data to correspond to a small area corresponding to a plurality of first small areas obtained by virtually dividing the chip area. A first method for generating a plurality of first internal data corresponding to the number of times of multiple drawing so as to arrange the figure by the number of times of multiple drawing; and a plurality of second small areas obtained by virtually dividing the cell Selecting one of a second method for generating second internal data for one time of the multiple drawing so as to arrange the figure in a corresponding small region;
One of the plurality of first internal data and the second internal data is processed by performing data processing on the drawing data in accordance with one of the first and second methods according to the selected result. Generating
Temporarily storing one of the plurality of first internal data and the second internal data in a storage device;
One of the plurality of first internal data and the second internal data is read from the storage device, and one of the plurality of first internal data and the second internal data is stored as data according to a selected result. Processing to generate a plurality of shot data for the number of times of multiple drawing;
Using the plurality of shot data, irradiating a charged particle beam to the drawing region of the sample while shifting the drawing range each time,
A charged particle beam drawing method comprising: A storage device in which cells composed of one or more figures store drawing data defined in a chip area;
The drawing data is input, and the drawing data is used to multiplex the drawing so that the figure is arranged by the number of times of drawing in a corresponding small area of the plurality of first small areas obtained by virtually dividing the chip area. A first method for generating a plurality of first internal data for the number of times, and the multiple drawing so that the figure is arranged in a corresponding small region of a plurality of second small regions obtained by virtually dividing the cell. A method selection unit for selecting one of the second methods for generating the second internal data for one time;
An output unit for outputting the selected result; and
A data processing method selection device comprising:

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