JP2005074574A - Polishing device and polishing method - Google Patents

Polishing device and polishing method Download PDF

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JP2005074574A
JP2005074574A JP2003308597A JP2003308597A JP2005074574A JP 2005074574 A JP2005074574 A JP 2005074574A JP 2003308597 A JP2003308597 A JP 2003308597A JP 2003308597 A JP2003308597 A JP 2003308597A JP 2005074574 A JP2005074574 A JP 2005074574A
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polishing
cleaning
wafer
plate
back surface
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Masaru Watanabe
渡辺  勝
Giichi Ozawa
義一 小澤
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Tokyo Seimitsu Co Ltd
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Tokyo Seimitsu Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a polishing device and a polishing method which neither pollute a chuck surface of a conveying device for receiving a wafer after polished, with slurry and chips from polishing, nor reduce the cleaning efficiency of a washing device for washing the wafer after polished. <P>SOLUTION: Prior to the conveyance of a plate-like material W after polished to the washing device 40, the back face of the plate-like material W is subjected to shower washing and scrub washing by a pre-washing device 7 inside a delivery device 50 for receiving the plate-like material W from a polishing head 33 and delivering it to the conveying device 60, to wash away the slurry and polishing waste, stuck to the back face of the plate-like material W. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、研磨装置及び研磨方法に係り、特に板状物の表面を研磨した後、研磨後の板状物を洗浄装置に搬入して洗浄する研磨装置及び研磨方法に関する。   The present invention relates to a polishing apparatus and a polishing method, and more particularly to a polishing apparatus and a polishing method for polishing the surface of a plate-like material and then carrying the cleaned plate-like material into a cleaning device for cleaning.

近年、半導体技術の発展により、デザインルールの微細化、多層配線化が進み、またコスト低減を進める上においてウエーハの大口径化も進行してきている。そのため、従来のようにパターンを形成した層の上にそのまま次の層のパターンを形成しようとした場合、前の層の凹凸のために次の層では良好なパターンを形成することが難しく、欠陥などが生じやすかった。   In recent years, with the development of semiconductor technology, design rules have been miniaturized and multilayered wiring has been progressed, and the wafer diameter has been increased in order to reduce costs. Therefore, when trying to form the pattern of the next layer as it is on the layer where the pattern is formed as in the past, it is difficult to form a good pattern in the next layer due to the unevenness of the previous layer, It was easy to occur.

そこで、パターンを形成した層の表面を平坦化し、その後で次の層のパターンを形成することが行われている。この場合、CMP(CMP:Chemical Mechanical Polishing 化学的機械研磨)法によるウェーハの研磨装置が用いられている。   Therefore, the surface of the layer on which the pattern is formed is flattened, and then the pattern of the next layer is formed. In this case, a wafer polishing apparatus using a CMP (CMP: Chemical Mechanical Polishing) method is used.

このCMP法によるウェーハの研磨装置として、表面に研磨パッドが貼付された円盤状の研磨定盤と、ウェーハの一面を保持してウェーハの他面を研磨パッドに当接させる研磨ヘッドとを有し、研磨定盤を回転させるとともに研磨ヘッドを回転させながらウェーハを研磨パッドに当接させ、研磨パッドとウェーハとの間に研磨剤であるスラリーを供給しながらウェーハの他面を研磨するCMP装置が、一般に広く知られている。   As a wafer polishing apparatus by this CMP method, it has a disk-shaped polishing surface plate with a polishing pad affixed to the surface, and a polishing head that holds one surface of the wafer and abuts the other surface of the wafer against the polishing pad. And a CMP apparatus for polishing the other surface of the wafer while rotating the polishing platen and rotating the polishing head to bring the wafer into contact with the polishing pad and supplying slurry as an abrasive between the polishing pad and the wafer. Generally known widely.

このCMP装置内にはウェーハを搬送する複数の搬送装置が組込まれ、ウェーハはこの複数の搬送装置によってCMP装置の各部に搬送されて研磨され、表面が平坦化される。また、1つの搬送装置と他の搬送装置との間のウェーハの受渡しのために、ウェーハ受渡しステージが組込まれている。   A plurality of transfer devices for transferring a wafer are incorporated in the CMP apparatus, and the wafer is transferred to each part of the CMP apparatus by the plurality of transfer apparatuses and polished to flatten the surface. In addition, a wafer delivery stage is incorporated for delivering a wafer between one transfer device and another transfer device.

このウエーハ受渡しステージとして、ウェーハの径より僅かに大径の凹部を有し、凹部の底面に給水口が設けられたステージであって、搬送装置からウェーハを受取る時は凹部の底面で受けるとともに凹部の側面で位置決めをし、ウェーハを別の搬送装置に渡す時は凹部に給水し、ウェーハをフローティングさせて持ち上げるようにしたロードステージが提案されている(例えば、特許文献1参照。)。   The wafer delivery stage is a stage having a recess having a diameter slightly larger than the diameter of the wafer and having a water supply port provided on the bottom surface of the recess. When the wafer is received from the transfer device, the wafer is received at the bottom surface of the recess. A load stage has been proposed in which positioning is performed on the side of the wafer and water is supplied to the recess when the wafer is transferred to another transfer device, and the wafer is floated and lifted (see, for example, Patent Document 1).

研磨され、表面が平坦化されたウェーハは、研磨ヘッドからこのロードステージ上に移され、このロードステージ上から別の搬送装置で洗浄装置へ搬送される。洗浄装置ではウェーハの表面及び裏面が洗浄され、リンスされ、そして乾燥される。
特開2000−124174号公報
The wafer that has been polished and whose surface is flattened is transferred from the polishing head onto the load stage, and is transferred from the load stage to a cleaning device by another transfer device. In the cleaning apparatus, the front and back surfaces of the wafer are cleaned, rinsed, and dried.
JP 2000-124174 A

しかしながら、前述の特許文献1に記載された従来のウェーハ加工装置では、表面が研磨されたウェーハは研磨ヘッドからロードステージに受け渡され、そこから次の搬送装置に移し替えられて洗浄装置まで搬送され、そこで洗浄と乾燥が行われるようになっている。   However, in the conventional wafer processing apparatus described in Patent Document 1 described above, the wafer whose surface is polished is transferred from the polishing head to the load stage, and then transferred to the next transfer apparatus and transferred to the cleaning apparatus. There, washing and drying are performed.

ところが、裏面で研磨ヘッドに保持されて表面を研磨されたウェーハは、研磨後に研磨ヘッドに保持されたまま表面側に純水が噴射されて、表面に付着していたスラリーや研磨屑が洗い流された状態でロードステージに受け渡されるが、ウェーハの裏面に回りこんだスラリーや研磨屑はそのままウェーハの裏面に付着したままになっている。   However, the wafer whose surface is polished by being held by the polishing head on the back side is sprayed with pure water to the surface side while being held by the polishing head after polishing, and the slurry and polishing debris adhering to the surface are washed away. In this state, it is delivered to the load stage, but the slurry and polishing debris that has come around to the back surface of the wafer remain attached to the back surface of the wafer.

そのため、ロードステージから次の搬送手段に受け渡した時に、搬送手段のチャック面がスラリーや研磨屑で汚染されるという問題があった。また、搬送手段のチャック面に付着したスラリーや研磨屑が乾燥して固着した時に、このチャック面で次のウェーハをチャックするとチャックされたウェーハの裏面に傷が付くという問題もあった。更に、汚れの多いウェーハを洗浄装置に持ち込むことにより、洗浄装置の効率が低下するという問題もあった。   For this reason, there has been a problem that the chuck surface of the conveying means is contaminated with slurry or polishing debris when it is transferred from the load stage to the next conveying means. In addition, when the slurry or polishing waste adhering to the chuck surface of the transport means is dried and fixed, if the next wafer is chucked with this chuck surface, the back surface of the chucked wafer is damaged. Furthermore, there has been a problem that the efficiency of the cleaning device is reduced by bringing a wafer with much dirt into the cleaning device.

本発明はこのような事情に鑑みてなされたもので、研磨後のウェーハを受取る搬送装置のチャック面をスラリーや研磨屑で汚染することがなく、また、搬送装置のチャック面に固着したスラリーや研磨屑でウェーハの裏面に傷が付くことを防止でき、更に研磨後のウェーハを洗浄する洗浄装置の洗浄効率を低下させることのない研磨装置、及び研磨方法を提供することを目的とする。   The present invention has been made in view of such circumstances, and does not contaminate the chuck surface of the transfer device that receives the polished wafer with slurry or polishing debris. An object of the present invention is to provide a polishing apparatus and a polishing method that can prevent the rear surface of the wafer from being scratched by polishing debris and that do not reduce the cleaning efficiency of the cleaning apparatus that cleans the polished wafer.

請求項1に記載の発明は、前記目的を達成するために、研磨ヘッドで板状物の裏面を保持して回転するとともに、スラリーを介在させながら前記板状物の表面を回転する研磨パッドに押圧して、前記板状物の表面を研磨する研磨装置であって、研磨後の前記板状物を洗浄する洗浄装置を備えた研磨装置において、研磨後の前記板状物を前記洗浄装置に搬送する前に前記板状物の裏面を洗浄するプリ洗浄装置が設けられていることを特徴としている。   In order to achieve the above object, the invention according to claim 1 is a polishing pad that rotates while holding the back surface of the plate-like material with a polishing head and rotates the surface of the plate-like material while interposing a slurry. In a polishing apparatus that presses and polishes the surface of the plate-like object, the polishing apparatus comprising a cleaning device that cleans the plate-like object after polishing, the plate-like object after polishing is transferred to the cleaning device. A pre-cleaning device is provided that cleans the back surface of the plate-like object before being conveyed.

請求項1の発明によれば、研磨後の板状物を洗浄装置に搬送する前に板状物の裏面をプリ洗浄装置で洗浄し、板状物の裏面に付着していたスラリーや研磨屑を流し去るので、搬送装置のチャック面が汚染されることがない。また、搬送装置のチャック面に固着したスラリーや研磨屑で板状物の裏面に傷が付くことを防止でき、更に研磨後の板状物の洗浄装置の洗浄効率を低下させることがない。   According to the first aspect of the present invention, the slurry and polishing dust adhered to the back surface of the plate-like material by washing the back surface of the plate-like material with the pre-cleaning device before conveying the polished plate-like material to the cleaning device. The chuck surface of the transfer device is not contaminated. Further, it is possible to prevent the back surface of the plate-like material from being scratched by the slurry or polishing dust adhered to the chuck surface of the transport device, and further, the cleaning efficiency of the plate-like material cleaning device after polishing is not reduced.

請求項2に記載の発明は、請求項1の発明において、前記プリ洗浄装置が、前記研磨ヘッドから板状物を受け取るとともに搬送装置に受け渡す受け渡し装置に設けられていることを特徴としている。   According to a second aspect of the present invention, in the first aspect of the invention, the pre-cleaning device is provided in a delivery device that receives a plate-like object from the polishing head and delivers it to a conveying device.

請求項2の発明によれば、研磨ヘッドから板状物を受け取るとともに搬送装置に受け渡す受け渡し装置内で板状物の裏面をプリ洗浄するので、板状物の裏面が搬送装置のチャック面に接触する前に裏面に付着していたスラリーや研磨屑を流し去ることができ、搬送装置のチャック面を汚染することがない。   According to the invention of claim 2, since the back surface of the plate-like object is pre-cleaned in the transfer device that receives the plate-like object from the polishing head and delivers it to the transfer device, the back surface of the plate-like object is brought into contact with the chuck surface of the transfer device. Slurry and polishing waste adhering to the back surface before contact can be washed away, and the chuck surface of the transfer device is not contaminated.

請求項3に記載の発明は、請求項1又は請求項2の発明において、前記プリ洗浄装置では、シャワー洗浄又はスクラブ洗浄、あるいはシャワー洗浄及びスクラブ洗浄を行うことを特徴としている。   According to a third aspect of the present invention, in the first or second aspect of the present invention, the pre-cleaning device performs shower cleaning or scrub cleaning, or shower cleaning and scrub cleaning.

請求項3の発明によれば、板状物の裏面がシャワー洗浄又はスクラブ洗浄、あるいはシャワー洗浄及びスクラブ洗浄でプリ洗浄されるので、裏面に付着していたスラリーや研磨屑を効率よく流し去ることができる。   According to the invention of claim 3, since the back surface of the plate-like material is pre-cleaned by shower cleaning or scrub cleaning, or shower cleaning and scrub cleaning, the slurry and polishing scraps adhering to the back surface can be efficiently washed away. Can do.

また、請求項4に記載の発明は、研磨ヘッドで板状物の裏面を保持して回転するとともに、スラリーを介在させながら前記板状物の表面を回転する研磨パッドに押圧して、前記板状物の表面を研磨する研磨方法であって、研磨後の前記板状物を洗浄装置で洗浄する研磨方法において、研磨後の前記板状物を洗浄装置に搬送する前に前記板状物の裏面をプリ洗浄することを特徴としている。   According to a fourth aspect of the present invention, the polishing head holds and rotates the back surface of the plate-like object, and the surface of the plate-like object is pressed against the rotating polishing pad while the slurry is interposed, so that the plate A polishing method for polishing a surface of a plate-like object, wherein the plate-like material after polishing is cleaned with a cleaning device, and before the plate-like material after polishing is transported to a cleaning device, It is characterized by pre-cleaning the back surface.

請求項5に記載の発明は、請求項4の発明において、前記プリ洗浄を、前記研磨ヘッドから板状物を受け取るとともに搬送装置に受け渡す受け渡し装置内で行うことを特徴とし、請求項6に記載の発明は、請求項4又は請求項5の発明において、前記プリ洗浄では、シャワー洗浄又はスクラブ洗浄、あるいはシャワー洗浄及びスクラブ洗浄を行うことを特徴としている。   According to a fifth aspect of the invention, in the fourth aspect of the invention, the pre-cleaning is performed in a delivery device that receives a plate-like object from the polishing head and delivers it to a conveying device. The invention described in any one of claims 4 and 5 is characterized in that in the pre-cleaning, shower cleaning or scrub cleaning, or shower cleaning and scrub cleaning is performed.

本発明によれば、研磨後の板状物を洗浄装置に搬送する前に板状物の裏面をプリ洗浄装置で洗浄し、板状物の裏面に付着していたスラリーや研磨屑を流し去るので、搬送装置のチャック面が汚染されることがない。また、搬送装置のチャック面に固着したスラリーや研磨屑で板状物の裏面に傷が付くことを防止でき、更に研磨後の板状物を洗浄する洗浄装置の洗浄効率を低下させることがない。   According to the present invention, the back surface of the plate-like material is washed with the pre-cleaning device before the polished plate-like material is transferred to the cleaning device, and the slurry and polishing scraps adhered to the back surface of the plate-like material are washed away. Therefore, the chuck surface of the transfer device is not contaminated. In addition, it is possible to prevent the back surface of the plate-like material from being scratched by slurry or polishing debris adhered to the chuck surface of the conveying device, and further, the cleaning efficiency of the cleaning device for cleaning the plate-like material after polishing is not reduced. .

また、研磨ヘッドから板状物を受け取るとともに搬送装置に受け渡す受け渡し装置内で板状物の裏面をプリ洗浄するので、板状物の裏面が搬送装置のチャック面に接触する前に裏面に付着していたスラリーや研磨屑を流し去ることができ、搬送装置のチャック面を汚染することがない。   In addition, since the back surface of the plate-like object is pre-cleaned in the transfer device that receives the plate-like material from the polishing head and delivers it to the transport device, it adheres to the back surface before it contacts the chuck surface of the transport device. The slurry and polishing scraps that have been removed can be washed away, and the chuck surface of the transfer device is not contaminated.

また、板状物の裏面がシャワー洗浄又はスクラブ洗浄、あるいはシャワー洗浄及びスクラブ洗浄でプリ洗浄されるので、裏面に付着していたスラリーや研磨屑を効率よく流し去ることができる。   Further, since the back surface of the plate-like material is pre-cleaned by shower cleaning or scrub cleaning, or shower cleaning and scrub cleaning, the slurry and polishing debris adhered to the back surface can be efficiently washed away.

以下添付図面に従って本発明に係る研磨装置及び研磨方法の最良の実施の形態について詳説する。尚各図において、同一の部材については同一の番号又は記号を付している。   The best mode for carrying out the polishing apparatus and polishing method according to the present invention will be described in detail below with reference to the accompanying drawings. In addition, in each figure, the same number or the code | symbol is attached | subjected about the same member.

図1、及び図2は、本発明に係る研磨装置の実施の形態を説明する構成図で、図1は平面図、図2は正面図である。   1 and 2 are configuration diagrams illustrating an embodiment of a polishing apparatus according to the present invention. FIG. 1 is a plan view and FIG. 2 is a front view.

研磨装置10は、板状物であるウェーハWを収納するウェーハ収納部20、ウェーハWを研磨する研磨部30、研磨されたウェーハWを洗浄、及び乾燥する洗浄装置40、ウェーハWの搬送時にウェーハWの受け渡しを行う受け渡し装置50、ウェーハWの搬送装置60、及びウェーハWの裏面をプリ洗浄するプリ洗浄装置70等で構成されている。   The polishing apparatus 10 includes a wafer storage unit 20 that stores a wafer W that is a plate-like object, a polishing unit 30 that polishes the wafer W, a cleaning apparatus 40 that cleans and dries the polished wafer W, and a wafer when the wafer W is transported. A transfer device 50 for transferring W, a transfer device 60 for the wafer W, a pre-cleaning device 70 for pre-cleaning the back surface of the wafer W, and the like.

ウェーハ収納部20には、多数枚のウェーハWを収納した供給カセット21と、研磨されたウェーハWを収納する収納カセット22とが格納されている。   The wafer storage unit 20 stores a supply cassette 21 that stores a large number of wafers W and a storage cassette 22 that stores the polished wafers W.

研磨部30は、図1及び図2に示すように、上面に研磨パッド32が貼付され、図示しない駆動装置によって回転される研磨定盤31、ウェーハWの裏面を保持して回転されるとともにウェーハWの表面を研磨パッド32に押圧させる研磨ヘッド33、研磨パッド32上面に揺動しながら研磨スラリーを供給するスラリーノズル34等で構成されている。   As shown in FIGS. 1 and 2, the polishing unit 30 has a polishing pad 32 attached to the upper surface, is rotated by a polishing surface plate 31 rotated by a driving device (not shown), and the rear surface of the wafer W, and is rotated while the wafer is rotated. A polishing head 33 that presses the surface of W against the polishing pad 32, a slurry nozzle 34 that supplies polishing slurry while swinging on the upper surface of the polishing pad 32, and the like.

研磨ヘッド33は、研磨部30の研磨位置とウェーハWの受け渡し装置50の受け渡し位置との間を移動可能で、受け渡し装置50上でウェーハWを受取るとともに、研磨後のウェーハWを受け渡し装置50に受け渡す。   The polishing head 33 is movable between the polishing position of the polishing unit 30 and the transfer position of the wafer W transfer device 50, receives the wafer W on the transfer device 50, and transfers the polished wafer W to the transfer device 50. Deliver.

洗浄装置40では、研磨後のウェーハWのアルカリ洗浄、酸洗浄、リンス、及びスピン乾燥をおこなう。受け渡し装置50は、内径がウェーハWの外径より僅かに大径のウェーハカップ51を有しており、搬送装置60からウェーハWを受け取って研磨ヘッド33に受け渡すとともに、研磨後のウェーハWを研磨ヘッド33から受け取り、搬送装置60に受け渡す。   The cleaning apparatus 40 performs alkali cleaning, acid cleaning, rinsing, and spin drying of the polished wafer W. The transfer device 50 has a wafer cup 51 having an inner diameter slightly larger than the outer diameter of the wafer W, receives the wafer W from the transfer device 60 and transfers it to the polishing head 33, and also transfers the polished wafer W to the polishing head 33. It is received from the polishing head 33 and transferred to the transfer device 60.

ウェーハカップ51には純水が貯留され、ウェーハWを受け取る時は水面上で衝撃を抑制して受け取る。また、ウェーハWを受け渡す時は貯留した純水を排水し、ウェーハカップ51の底部に設けられた複数の支持部材51A、51A、…でウェーハWを支持した状態で受け渡すようになっている。支持部材51Aは、円周上等間隔に6個乃至子8個配設するのが好ましい。   Pure water is stored in the wafer cup 51, and when the wafer W is received, the impact is suppressed on the water surface. Further, when the wafer W is delivered, the stored pure water is drained, and the wafer W is delivered while being supported by a plurality of support members 51A, 51A,... Provided at the bottom of the wafer cup 51. . It is preferable that six to eight support members 51A are arranged at equal intervals on the circumference.

搬送装置60は、先端に吸着パッド62が取付けられた多間接アーム61を有し、吸着パッド62のチャック面62AでウェーハWを吸着し、供給カセット21、受け渡し装置50、洗浄装置40、及び収納カセット22間でウェーハWを搬送する。   The transfer device 60 has a multi-indirect arm 61 with a suction pad 62 attached to the tip, sucks the wafer W by the chuck surface 62A of the suction pad 62, supplies the cassette 21, the transfer device 50, the cleaning device 40, and the storage. Wafers W are transferred between the cassettes 22.

受け渡し装置50の上方にはプリ洗浄装置70が設けられている。プリ洗浄装置70はシャワーノズル71と回転ブラシ72とを有しており、シャワーノズル71はウェーハWの径方向に往復移動するとともに、先端から下方に向けて純水を噴射する。   A pre-cleaning device 70 is provided above the delivery device 50. The pre-cleaning device 70 has a shower nozzle 71 and a rotating brush 72. The shower nozzle 71 reciprocates in the radial direction of the wafer W and jets pure water downward from the tip.

また、ブラシ72は円筒形状のナイロンブラシ又はスポンジで形成され、軸芯から純水を湧出させながら回転するとともにウェーハWの径方向に往復移動する。なお、ブラシ72は円筒形状に限らず、カップ型ブラシであってもよい。   The brush 72 is formed of a cylindrical nylon brush or sponge, and rotates while causing pure water to flow from the shaft core and reciprocates in the radial direction of the wafer W. The brush 72 is not limited to a cylindrical shape, and may be a cup-type brush.

このプリ洗浄装置70は、受け渡し装置50に保持されたウェーハWの裏面にシャワーノズル71から純水を噴射しながらシャワーノズル71を往復移動させてシャワー洗浄するとともに、回転ブラシ72を回転させながら裏面に当接させて往復移動させウェーハWの裏面をスクラブする。このように、プリ洗浄装置70によるシャワー洗浄及びスクラブ洗浄でウェーハWの裏面に付着しているスラリーや研磨屑が洗い流される。   The pre-cleaning device 70 performs shower cleaning by reciprocating the shower nozzle 71 while spraying pure water from the shower nozzle 71 onto the back surface of the wafer W held by the delivery device 50 and rotating the rotating brush 72 to rotate the back surface. The back surface of the wafer W is scrubbed by abutting it. In this way, the slurry and polishing debris adhering to the back surface of the wafer W are washed away by shower cleaning and scrub cleaning by the pre-cleaning device 70.

次に、前述のように構成された研磨装置10の作用について説明する。ウェーハ収納部20には研磨すべきウェーハWが複数枚収納された供給カセット21と、研磨後のウェーハWを収納する空の収納カセット22がセットされる。   Next, the operation of the polishing apparatus 10 configured as described above will be described. A supply cassette 21 storing a plurality of wafers W to be polished and an empty storage cassette 22 storing the polished wafers W are set in the wafer storage unit 20.

次に最初のウェーハWが搬送装置60によって供給カセット21から取出され、受け渡し装置50に受け渡される。受け渡し装置50のウェーハカップ51には純水が貯留されており、水面でウェーハを柔らかく受取るとともにウェーハWのセンタリングを行う。この時、ウェーハWの研磨すべき表面側が下向きで水面と接している。   Next, the first wafer W is taken out from the supply cassette 21 by the transfer device 60 and transferred to the transfer device 50. Pure water is stored in the wafer cup 51 of the delivery device 50, and the wafer W is softly received on the water surface and the wafer W is centered. At this time, the surface side of the wafer W to be polished is facing downward and in contact with the water surface.

次にウェーハカップ51内の純水が排出され、ウェーハWはウェーハカップ51底部に設けられた複数の支持部材51A、51A、…に支持される。ここで研磨ヘッド33が受け渡し装置50の上方へ移動し、ウェーハWの裏面を吸着保持して研磨パッド32上面まで移動する。   Next, the pure water in the wafer cup 51 is discharged, and the wafer W is supported by a plurality of support members 51A, 51A,. Here, the polishing head 33 moves above the delivery device 50, moves to the upper surface of the polishing pad 32 while holding the back surface of the wafer W by suction.

研磨ヘッド33が受け渡し装置50からウェーハWを受取る時は、ウェーハカップ51内の純水が排出されているのでウェーハWには純水による表面張力が働かず、スムーズに受取ることができる。   When the polishing head 33 receives the wafer W from the transfer device 50, since the pure water in the wafer cup 51 is discharged, the surface tension due to the pure water does not act on the wafer W, and the wafer W can be received smoothly.

ここでウェーハWは回転する研磨パッドに自転しながら押圧され、表面が研磨される。研磨にあたっては、揺動するスラリーノズル34から研磨材を含有した薬液スラリーが研磨パッド32上面に供給され、ウェーハWの表面がCMP法で化学機械研磨されて平坦化される。研磨が終了すると、図示しない純水ノズルから研磨されたウェーハWの表面に純水が噴射され、スラリーや研磨屑を表面から流し去る。   Here, the wafer W is pressed while rotating on the rotating polishing pad, and the surface is polished. In polishing, a chemical slurry containing an abrasive is supplied from the oscillating slurry nozzle 34 to the upper surface of the polishing pad 32, and the surface of the wafer W is flattened by chemical mechanical polishing by the CMP method. When the polishing is completed, pure water is jetted onto the surface of the polished wafer W from a pure water nozzle (not shown), and slurry and polishing debris are washed away from the surface.

次に、研磨ヘッド33は受け渡し装置50の上方へ移動し、吸着を解除して、純水が貯留されたウェーハカップ51内に研磨されたウェーハWを受け渡す。ウェーハWは研磨終了後、研磨ヘッド33に保持された状態のまま純水洗浄されて表面のスラリーや研磨屑が除去されているが、研磨中に研磨ヘッド33のウェーハ吸着面とウェーハWの裏面との僅かな隙間に侵入したスラリーや研磨屑は除去されていないので、受け渡し装置50に受け渡されたウェーハWの裏面にはスラリーや研磨屑が付着したままになっている。   Next, the polishing head 33 moves above the transfer device 50, releases the suction, and transfers the polished wafer W into the wafer cup 51 in which pure water is stored. The wafer W is cleaned with pure water while being held by the polishing head 33 after polishing, and the slurry and polishing debris on the surface are removed. During the polishing, the wafer suction surface of the polishing head 33 and the back surface of the wafer W are removed. Since the slurry and the polishing dust that have entered the slight gap between them are not removed, the slurry and the polishing dust remain attached to the back surface of the wafer W transferred to the transfer device 50.

ここで、プリ洗浄装置70が起動する。即ちシャワーノズル71がウェーハWの径方向に往復運動しながら純水をウェーハWの裏面に噴射してシャワー洗浄するとともに、回転ブラシ72が軸芯から純水を湧出させながら回転と往復運動をしてスクラブ洗浄し、ウェーハWの裏面に付着していたスラリーや研磨屑を洗い流す。   Here, the pre-cleaning apparatus 70 is activated. That is, the shower nozzle 71 reciprocates in the radial direction of the wafer W, sprays pure water onto the back surface of the wafer W to perform shower cleaning, and the rotating brush 72 rotates and reciprocates while discharging pure water from the shaft core. Then, scrub cleaning is performed to wash away slurry and polishing debris adhering to the back surface of the wafer W.

次にウェーハカップ51内の純水が排出されてウェーハWが複数の支持部材51A、51A、…に支持された状態で搬送装置60の吸着パッド62に吸着され、洗浄装置40内に搬送される。   Next, the pure water in the wafer cup 51 is discharged and the wafer W is adsorbed to the suction pad 62 of the transfer device 60 while being supported by the plurality of support members 51A, 51A,. .

この時ウェーハWの裏面はプリ洗浄装置70によって洗浄されているので、搬送装置60の吸着パッド62の吸着面62Aを汚染することがない。また大量の汚れを洗浄装置40内に持ち込むことも防止される。   At this time, since the back surface of the wafer W is cleaned by the pre-cleaning device 70, the suction surface 62A of the suction pad 62 of the transfer device 60 is not contaminated. Further, it is possible to prevent a large amount of dirt from being brought into the cleaning device 40.

洗浄装置40では、ウェーハWの表面及び裏面の両面に対してアルカリ薬液を供給しながらPVA(ポリビニルアルコール)ブラシによるスクラブ洗浄とリンス、酸性薬液とブラシによるスクラブ洗浄とリンス、金属汚染除去のためのケミカルスピン洗浄、及び超音波を付加した純水メガソニックスピン洗浄と窒素ガスによるスピンドライ等、が行われ、ウェーハWは完全に洗浄され、乾燥される。この洗浄装置40では、ウェーハWが極力汚れの少ない状態で搬入されるので、洗浄効率が高い。   In the cleaning apparatus 40, scrub cleaning and rinsing with a PVA (polyvinyl alcohol) brush, scrub cleaning and rinsing with an acidic chemical and brush, and metal contamination removal while supplying an alkaline chemical to both the front and back surfaces of the wafer W Chemical spin cleaning, pure water megasonic spin cleaning with ultrasonic waves, spin drying with nitrogen gas, and the like are performed, and the wafer W is completely cleaned and dried. In this cleaning apparatus 40, since the wafer W is loaded with as little dirt as possible, the cleaning efficiency is high.

洗浄装置40で完全に洗浄され、乾燥されたウェーハWは、最後に搬送装置60によって収納カセット22に収納される。なお、搬送装置60の吸着パッド62は前もって図示しない洗浄ノズルから噴射された純水で清浄にされ、洗浄されたウェーハWを汚染しないようになっている。以上が本発明に係る研磨装置10における1枚のウェーハWの流れである。   The wafer W completely cleaned and dried by the cleaning device 40 is finally stored in the storage cassette 22 by the transfer device 60. The suction pad 62 of the transfer device 60 is previously cleaned with pure water sprayed from a cleaning nozzle (not shown) so as not to contaminate the cleaned wafer W. The above is the flow of one wafer W in the polishing apparatus 10 according to the present invention.

なお、前述の実施の形態では、プリ洗浄装置70の構成をシャワー洗浄用のシャワーノズル71及びスクラブ洗浄用の回転ブラシ72とで構成したが、本発明はこれに限らず、シャワーノズル71及び回転ブラシ72のどちらか一方のみであってもよく、また、シャワー洗浄又はスクラブ洗浄に限らずメガソニック洗浄等のその他の洗浄手段を用いてもよい。   In the above-described embodiment, the pre-cleaning apparatus 70 is configured with the shower nozzle 71 for shower cleaning and the rotary brush 72 for scrub cleaning. However, the present invention is not limited to this, and the shower nozzle 71 and the rotation are not limited thereto. Only one of the brushes 72 may be used, and other cleaning means such as megasonic cleaning may be used instead of shower cleaning or scrub cleaning.

本発明の実施の形態に係る研磨装置を表わす平面図The top view showing the polish device concerning an embodiment of the invention 本発明の実施の形態に係る研磨装置を表わす部分正面図The partial front view showing the polish device concerning an embodiment of the invention

符号の説明Explanation of symbols

10…研磨装置、32…研磨パッド、33…研磨ヘッド、40…洗浄装置、50…受け渡し装置、60…搬送装置、70…プリ洗浄装置、W…ウェーハ(板状物)   DESCRIPTION OF SYMBOLS 10 ... Polishing apparatus, 32 ... Polishing pad, 33 ... Polishing head, 40 ... Cleaning apparatus, 50 ... Delivery apparatus, 60 ... Conveyance apparatus, 70 ... Pre-cleaning apparatus, W ... Wafer (plate-shaped object)

Claims (6)

研磨ヘッドで板状物の裏面を保持して回転するとともに、スラリーを介在させながら前記板状物の表面を回転する研磨パッドに押圧して、前記板状物の表面を研磨する研磨装置であって、研磨後の前記板状物を洗浄する洗浄装置を備えた研磨装置において、
研磨後の前記板状物を前記洗浄装置に搬送する前に前記板状物の裏面を洗浄するプリ洗浄装置が設けられていることを特徴とする研磨装置。
A polishing apparatus that holds and rotates the back surface of the plate-like object with a polishing head and polishes the surface of the plate-like object by pressing the surface of the plate-like object against a rotating polishing pad while interposing a slurry. In a polishing apparatus provided with a cleaning device for cleaning the plate-like material after polishing,
A polishing apparatus, comprising: a pre-cleaning device that cleans the back surface of the plate-shaped object before the polished plate-shaped object is conveyed to the cleaning device.
前記プリ洗浄装置が、前記研磨ヘッドから板状物を受け取るとともに搬送装置に受け渡す受け渡し装置に設けられていることを特徴とする、請求項1に記載の研磨装置。   The polishing apparatus according to claim 1, wherein the pre-cleaning device is provided in a transfer device that receives a plate-like object from the polishing head and transfers the plate-like object to a conveying device. 前記プリ洗浄装置では、シャワー洗浄又はスクラブ洗浄、あるいはシャワー洗浄及びスクラブ洗浄を行うことを特徴とする、請求項1又は請求項2に記載の研磨装置。   The polishing apparatus according to claim 1, wherein the pre-cleaning apparatus performs shower cleaning or scrub cleaning, or shower cleaning and scrub cleaning. 研磨ヘッドで板状物の裏面を保持して回転するとともに、スラリーを介在させながら前記板状物の表面を回転する研磨パッドに押圧して、前記板状物の表面を研磨する研磨方法であって、研磨後の前記板状物を洗浄装置で洗浄する研磨方法において、
研磨後の前記板状物を洗浄装置に搬送する前に前記板状物の裏面をプリ洗浄することを特徴とする研磨方法。
In this polishing method, the back surface of the plate-like object is held by the polishing head and rotated, and the surface of the plate-like object is pressed against the rotating polishing pad while the slurry is interposed, thereby polishing the surface of the plate-like object. In the polishing method of cleaning the plate-like material after polishing with a cleaning device,
A polishing method comprising pre-cleaning the back surface of the plate-like material before conveying the plate-like material after polishing to a cleaning device.
前記プリ洗浄を、前記研磨ヘッドから板状物を受け取るとともに搬送装置に受け渡す受け渡し装置内で行うことを特徴とする、請求項4に記載の研磨方法。   The polishing method according to claim 4, wherein the pre-cleaning is performed in a delivery device that receives a plate-like object from the polishing head and delivers the plate-like material to a conveying device. 前記プリ洗浄では、シャワー洗浄又はスクラブ洗浄、あるいはシャワー洗浄及びスクラブ洗浄を行うことを特徴とする、請求項4又は請求項5に記載の研磨方法。   6. The polishing method according to claim 4, wherein in the pre-cleaning, shower cleaning or scrub cleaning, or shower cleaning and scrub cleaning is performed.
JP2003308597A 2003-09-01 2003-09-01 Polishing device and polishing method Pending JP2005074574A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008311603A (en) * 2006-11-28 2008-12-25 Ebara Corp Surface treatment device and method of substrate, and substrate treatment device and method
US7566663B2 (en) 2005-12-21 2009-07-28 Nec Electronics Corporation Method for manufacturing semiconductor device or semiconductor wafer using a chucking unit
JP2017092347A (en) * 2015-11-13 2017-05-25 株式会社Sumco Wafer polishing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7566663B2 (en) 2005-12-21 2009-07-28 Nec Electronics Corporation Method for manufacturing semiconductor device or semiconductor wafer using a chucking unit
JP2008311603A (en) * 2006-11-28 2008-12-25 Ebara Corp Surface treatment device and method of substrate, and substrate treatment device and method
JP2017092347A (en) * 2015-11-13 2017-05-25 株式会社Sumco Wafer polishing method

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