JP2005072141A - Light emitting device, and light emitting element and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To suppress a change of emission spectrum and a change of light output of a light emitting element by temperature. <P>SOLUTION: A filter film 300 which passes wavelength components in a window range narrower than a width of the emission spectrum of the light emitting element 1, and which has a change of the window range by temperature smaller than the change of the emission spectrum of the light emitting element 1 by temperature, is formed on a light outputting surface of a package 100 wherein the light emitting element 1 is stored, so that higher level components of the emission spectrum of the light emitting element 1 may come within the window range of the filter film 300 when the temperature changes. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a technology for suppressing temperature fluctuations of a light emission wavelength spectrum and light output in a light emitting device and a light emitting element used therein.

  A light emitting element such as an LED (light emitting diode) has a characteristic that a spectrum of an emission wavelength changes according to temperature. For example, in a compound semiconductor LED, the band gap that determines the emission wavelength has temperature dependence, and the band gap becomes smaller and the spectrum of the emission wavelength shifts to the longer wavelength side at higher temperatures.

  In addition, it is known that the light output decreases because the light emission efficiency decreases as the temperature increases (see, for example, Patent Document 1).

  The temperature dependence of the band gap of a semiconductor is generally given by the following equation.

E _g (T) = E _g (T ₀ ) −α · T ² / (β + T) (1)
Here, E _g (T) is a band gap at a temperature T [° C.], E _g (T ₀ ) is a band gap at a temperature T ₀ [° C.], and α and β are constants determined by a semiconductor material. . Although this equation is not linear, the temperature dependence can be approximated linearly within the actual operating temperature range.

  The relationship between wavelength and band gap is expressed by the following equation.

λ (T) = hν = 1.24 / E _g (T) (2)
FIG. 14 is a graph showing an example of an emission spectrum of an LED that changes due to temperature fluctuations. The LED used here is epitaxially grown on a GaAs substrate with a multilayer structure mainly composed of quaternary alloy crystals of ln _0.5 (Ga _1-X Al _X ) _0.5 P. It was set as the structure made to do. This LED can realize a band gap corresponding to red to green by changing the value of X of the mixed crystal composition. That is, the active layer of the LED, which is the main body of light emission, is composed of this quaternary mixed crystal so as to have a necessary peak wavelength from red to green.
Japanese Patent Laid-Open No. 5-283735

  However, in the case of this type of LED, the change in wavelength with temperature is about 0.15 nm / deg. The temperature range in which actual operation needs to be guaranteed is about −40 ° C. ≦ T ≦ 100 ° C. Since the temperature range for guaranteeing operation is thus wide, for example, the emission spectrum 400 of yellow (λ = 587 nm, X = 0.295) at room temperature shown in FIG. 14 shifts to the emission spectrum 401 on the long wavelength side at high temperatures. It changes to orange, and at low temperatures, it shifts to the emission spectrum 402 on the short wavelength side and changes to green. That is, although the user of the LED expects to maintain a predetermined color, the color changes depending on the temperature.

  At high temperatures, the light output decreases and becomes dark, and at low temperatures, the light output increases and becomes too bright. These drawbacks become a serious problem particularly when used in a severe temperature range such as in-vehicle use.

  The present invention has been made in view of the above, and an object of the present invention is to provide a light-emitting device and a light-emitting element capable of suppressing temperature fluctuations of an emission spectrum and temperature fluctuations of light output.

  Another object of the present invention is to provide a manufacturing method capable of manufacturing the light-emitting element at a low cost.

  The light emitting device according to the first aspect of the present invention transmits a wavelength component in a light emitting element whose emission wavelength spectrum varies with temperature and a window range having a width narrower than the width of the spectrum, and the temperature variation in the window range is And a filter film having a bandpass characteristic smaller than the temperature fluctuation of the spectrum, and when the temperature fluctuates, the higher level part of the spectrum falls within the window range of the filter film. To do.

  In the present invention, in order to compensate for the disadvantage of the light emitting element in which the spectrum of the emission wavelength varies depending on the temperature, the wavelength component is transmitted in a window range having a width narrower than the width of the spectrum of the emission wavelength, and By using a filter film with a bandpass characteristic whose temperature fluctuation is smaller than the temperature fluctuation of the emission wavelength spectrum, when the temperature fluctuates, the higher level part of the spectrum falls within the window range of the filter film. In addition, the temperature variation of the apparent emission wavelength spectrum is suppressed, and the temperature variation of the light output of the light emitting element is suppressed.

  The filter film here includes not only transmitting but also capable of amplifying transmitting wavelength components.

  The light emitting device according to the second aspect of the present invention transmits the wavelength component in the active layer in which the spectrum of the emission wavelength varies with temperature and the window range having a width narrower than the width of the spectrum, and the temperature variation in the window range is A filter film smaller than the temperature fluctuation of the spectrum, and a higher level part of the spectrum falls within the window range of the filter film when the temperature fluctuates.

  In the present invention, by providing the filter film on the light emitting element, the step of separately providing the filter film on the light output surface of the package housing the light emitting element can be omitted.

  A method for manufacturing a light emitting device according to a third aspect of the present invention is a manufacturing method for manufacturing a light emitting device having a plurality of active layers having at least one spectral peak different from the others and the filter film, and is set. The plurality of active layers are formed by crystal growth to a thickness corresponding to the spectrum of the emission wavelength.

  In the present invention, a plurality of active layers are formed in the same light emitting device by growing crystals to a thickness corresponding to the spectrum of the emission wavelength to be set.

  According to the light emitting device and the light emitting element of the present invention, it is possible to suppress the temperature fluctuation of the emission spectrum of the light emitting element and to suppress the temperature fluctuation of the light output. As a result, a particularly great effect can be obtained in a field where the color tone determined by the emission wavelength and the stability of the light output are required.

  According to the light emitting device of the present invention, the step of separately providing a filter film on the light output surface of the package containing the light emitting device can be omitted, and the light emitting device can be manufactured by a low cost and simple manufacturing process.

  According to the method for manufacturing a light emitting element of the present invention, a plurality of active layers can be integrated in one light emitting element, and the light emitting element can be manufactured at low cost. In addition, the process of mounting a plurality of light emitting elements on a package can be simplified, and the light emitting device can be manufactured by a lower cost and simple manufacturing process.

[First Embodiment]
As shown in the perspective view of FIG. 1, the light emitting device 1 according to the first embodiment includes a quaternary mixture of ln _0.5 (Ga _1-X Al _X ) _0.5 P on an n-type GaAs substrate 10. An example is one having a structure obtained by epitaxially growing a multilayer structure mainly composed of crystals. The light emitting element 1 is an LED as an example. As a minimum structure, the light-emitting element 1 configured to emit yellow light at room temperature has an n-type quaternary mixed crystal n-ln _0.5 (Ga _{0.4) with} X = 0.6 on an n-type GaAs substrate 10. The clad layer 20 is grown with Al _0.6 ) _0.5 P, and a quaternary mixed crystal undoped-ln _0.5 (Ga _0.705 Al _0.295 ) _0.5 P with X = 0.295 is grown _thereon. An active layer 30 is grown, and a clad layer 40 is grown on the p-type quaternary mixed crystal p-ln _0.5 (Ga _0.4 Al _0.6 ) _0.5 P with X = 0.6. The configuration is as follows.

  The light emitting device 1 has a so-called double hetero structure in which the active layer 30 is sandwiched between a p-type crystal and an n-type crystal having a smaller band gap. In many cases, the active layer 30 has an MQW (multi-quantum well) structure which is a finer structure.

  An n-type electrode 60 is formed on the entire lower surface of the n-type GaAs substrate 10, and a p-type electrode is formed on the cladding layer 40. Since the p-type electrode is not transparent, it does not cover the entire top surface of the clad layer 40, but is limited to a pad 51 for bonding the wire 70 and a peripheral portion 52 diagonally arranged around the pad 51. In addition, light from the active layer 30 can be extracted through a portion where the p-type electrode is not disposed. However, in the actual structure, a DBR (distributed bragg reflector) is formed so that light does not reach the opaque GaAs substrate 10 due to the convenience of electrode formation, current path control, and the like, but description thereof is omitted here.

  As shown in the perspective view of FIG. 2, the light emitting device according to the first embodiment has a configuration using a large SMD (surface mount device) type package on which the light emitting element 1 is mounted. Specifically, the light emitting element 1 is connected to the lead frame 101a accommodated in the package 100 having a frame structure made of PPA (polyphthalate amide) resin with the n side down, and the p of the light emitting element 1 is connected. The side wire 70 is connected to the lead frame 101b, the inside of the package 100 is filled with a transparent epoxy resin 102, and the filter film 300 is provided on the light output surface of the upper layer. The package 100 is made so as not to transmit light in order to prevent light from leaking from side surfaces and bottom surfaces other than the light output surface provided with the filter film 300.

  The filter film 300 transmits a wavelength component in a window range having a width narrower than the width of the emission spectrum of the light emitting element 1, and the bandpass has a temperature variation in the window range smaller than the temperature variation of the emission spectrum of the light emitting element 1. A dielectric multilayer film having characteristics is used. The filter film 300 is a band-pass filter that sets the center wavelength of the window range to 590 nm.

  As shown in the spectrum graph of FIG. 3, the light-emitting element 1 has a yellow spectrum 402 whose emission wavelength at which the level reaches a peak is 580 nm. The filter film 300 has a filter characteristic 500 that transmits only a wavelength component (component indicated by hatching in the figure) within a window range 501 centered at 590 nm corresponding to yellow in the emission spectrum of the light-emitting element 1. In actual filter characteristics, ripples often appear outside the passband, but the details are simplified in the graph of FIG.

  When the temperature rises, as shown in the spectrum graph of FIG. 4, the emission spectrum of the light-emitting element 1 becomes a spectrum 400 in which the light output itself is also lowered because it shifts to the longer wavelength side and the efficiency decreases at a high temperature. However, since the window range 501 of the filter film 300 includes a higher level portion such as the peak of the emission spectrum of the light emitting element 1 and the vicinity thereof, the emission spectrum transmitted through the filter film 300 is the light of the light emitting element 1. It is possible to compensate for the decrease in output and to reduce the temperature change apparently. If the temperature is further increased, the skirt portion on the short wavelength side of the emission spectrum 400 enters the window range 501, so that the optical output is apparently reduced, but at least the start temperature of the reduction is increased. Can do.

  Therefore, according to the present embodiment, the wavelength component is transmitted through the window range having a width narrower than the width of the emission spectrum of the light emitting element 1, and the temperature fluctuation in the window range is the temperature fluctuation of the emission spectrum of the light emitting element 1. By using a filter film 300 having a smaller bandpass characteristic and making the higher level portion of the emission spectrum of the light-emitting element 1 fall within the window range of the filter film 300 when the temperature fluctuates, apparently The temperature fluctuation of the emission spectrum of the light emitting element 1 can be reduced, and the temperature fluctuation of the light output of the light emitting element 1 can be suppressed.

  As the filter film 300, a filter film having a function of amplifying the wavelength as well as transmitting the wavelength component in the window range may be used. For example, a structure in which a reflection film and a transmission film having amplification characteristics are used and the active layer 30 of the light emitting element 1 is sandwiched between the reflection film and the transmission film can be considered.

  Further, in the present embodiment, the LED is used because the effect is particularly remarkable as the light emitting element 1, but the present invention is not limited to this. For example, an LD (Laser Diode), EL (Electro-Luminescence), a light bulb, or the like may be used.

[Second Embodiment]
In the first embodiment, a single light emitting element is used. However, in the second embodiment, by using a plurality of light emitting elements having at least one spectral peak different from the others, A light-emitting device capable of suppressing temperature fluctuations of the emission spectrum and light output of a light-emitting element in a flexible and effective manner will be described.

  As shown in the perspective view of FIG. 5, the light emitting device according to the present embodiment covers all the light output surfaces of the three packages 100a, 100b, and 100c that individually accommodate the three light emitting elements 1a, 1b, and 1c. In this configuration, one filter film 310 is provided so as to cover it. The basic configuration of each of the packages 100a to 100c and the filter film 310 is the same as that of the package 100 and the filter film 300 described with reference to FIG. The light emitting elements 1a to 1c have the same basic structure as that described with reference to FIG. 1, although the emission spectra are slightly different.

  As shown in the spectrum graph of FIG. 6, the light emission wavelength of the light emitting element 1a has a center spectrum 400 where the wavelength peaking at room temperature (hereinafter referred to as “peak wavelength” as appropriate) is 590 nm, and the light emission wavelength of the light emitting element 1b. Has a spectrum 401 having a peak wavelength on the longer wavelength side than the spectrum 400, and an emission wavelength of the light emitting element 1c has a spectrum 402 having a peak wavelength on the shorter wavelength side. In the figure, these synthetic spectra are indicated by 410.

  By setting the light emitting element 1b on the short wavelength side to a higher output than the light emitting element 1a at the center, and setting the light emitting element 1c on the high wavelength side to a lower output than the light emitting element 1a, A synthetic spectrum 410 whose peak increases toward is obtained. Further, the interval between the peak wavelengths of the respective light emitting elements is also set so that the width of the combined spectrum is widened. By forming the composite spectrum 410 in this way, the spectrum width is widened, so that the window range 511 in which the center wavelength in the filter film 310 is 590 nm can be widened.

  When the temperature rises, as shown in the spectrum graph of FIG. 7, the synthetic spectrum 410 shifts to the longer wavelength side, and the efficiency decreases at a high temperature, so that the light output itself also decreases. However, since the peak on the short wavelength side of the synthetic spectrum 410 is set high, a higher level portion such as this peak and the vicinity thereof enters the window range 501 of the filter film 310 and passes through the filter film 310. As for the emission spectrum, it is possible to compensate for the decrease in the light output of the light emitting element 1 and to reduce the temperature change apparently.

  Therefore, according to the present embodiment, by using a plurality of light emitting elements 1a to 1c having at least one spectrum peak different from the others, a combined spectrum is formed and the spectrum width is widened. Therefore, the window range of the filter film 310 is increased. 511 can be widened, the temperature fluctuation of the emission spectrum can be reduced, and the light output transmitted through the filter film can be increased. As a result, it is possible to deal with a wider range of temperature fluctuations, finely deal with halftone colors, and obtain a light output comparable to a general light-emitting element that does not have the filter film 310.

  According to the present embodiment, by adjusting the peak wavelength interval and the light output difference of each of the light emitting elements 1a to 1c, the degree of freedom in design when forming a composite spectrum becomes extremely large, and the light emitting device is practically used. Can increase the sex.

  According to the present embodiment, by providing one filter film 310 so as to cover the surfaces of all the light outputs of the three packages 100a to 100c that individually accommodate the three light emitting elements 1a to 1c, A light-emitting device using a light-emitting element can be realized.

[Third Embodiment]
In the third embodiment, another example for realizing a light-emitting device using a plurality of light-emitting elements having at least one spectral peak different from the other ones will be described.

  As shown in the perspective view of FIG. 8, the light-emitting device in this embodiment basically has a configuration in which a plurality of light-emitting devices shown in FIG. 2 are arranged. Specifically, the individual filter films 300a, 300b, and 300c are provided on the surfaces of the light outputs of the three packages 100a, 100b, and 100c that individually accommodate the three light emitting elements 1a, 1b, and 1c. . The basic configuration of each of the packages 100a to 100c and each of the filter films 300a to 300c is the same as that of the package 100 and the filter film 300 described with reference to FIG. 2, and each of the filter films 300a to 300c has been described with reference to FIG. It has a filter characteristic 510. The basic configuration of each of the light emitting elements 1a to 1c is the same as that described with reference to FIG. 1, and has the spectra 400, 401, and 402 described with reference to FIG.

  Therefore, according to the present embodiment, the filter films 300a to 300c are individually provided on the surfaces of the light outputs of the plurality of packages 100a to 100c that individually accommodate the plurality of light emitting elements 1a to 1c. 6 can be obtained, and the same effects as those of the second embodiment can be obtained.

[Fourth Embodiment]
In the fourth embodiment, another example for realizing a light-emitting device using a plurality of light-emitting elements having at least one spectral peak different from the other ones will be described.

  The light-emitting device in this embodiment has a structure in which a plurality of light-emitting elements each provided with a filter film are housed in the same package.

  Specifically, as shown in the perspective view of FIG. 9, each light emitting element 11 a, 11 b, 11 c has a configuration in which a filter film 340 is provided on the cladding layer 40. The filter film 340 transmits a wavelength component in a window range having a width narrower than the width of the emission spectrum from the active layer 30, and the dielectric constant has a temperature variation in the window range smaller than that in the emission spectrum from the active layer 30. Body multilayer film is used. This filter film 340 functions as a bandpass filter having a center wavelength of 590 nm. In addition, the same components as those in FIG. 1 are denoted by the same reference numerals, and redundant description is omitted here.

  As shown in the perspective view of FIG. 10, the light emitting device has the light emitting elements 11 a to 11 c on the lead frame 101 a housed in a package 110 having a PPA resin frame structure with the n side facing down. In addition to the connection, the p-side wire 70 of each light emitting element 11a to 11c is connected to the lead frame 101b, and the inside of the frame is filled with a transparent epoxy resin 102. A filter film is not provided on the light output surface of the package 110.

  The emission spectra of the respective light emitting elements 11a to 11c are set so as to be the spectra 400, 401, and 402 described with reference to FIG. In addition, at least one of the lead frames 101a or 101b may be divided for each light emitting element so that the light emitting elements 11a to 11c can be driven independently.

  Therefore, according to the present embodiment, the composite spectrum 410 described with reference to FIG. 6 can be obtained by housing the plurality of light emitting elements 11a to 11c each provided with the filter film 340 in the same package 110. In addition, since it is not necessary to provide a filter film on the entire surface of the light output of the package 110, the same effect as that of the second embodiment can be obtained with a low cost and a simple manufacturing process.

  Further, when the light emitting element 11 provided with the filter film 340 is accommodated alone in the package 100 as in the first embodiment, the filter film 300 is formed on the entire light output surface of the package 100 as shown in FIG. There is no need to provide it separately, and the same effects as those of the first embodiment can be obtained by a low-cost and simple manufacturing process.

[Fifth Embodiment]
In the fourth embodiment, the filter film 340 is provided on the light emitting element 11 including the single active layer 30. However, in the fifth embodiment, at least one spectrum peak is different from the others. A light-emitting element having the active layer will be described.

  As shown in the perspective view of FIG. 11, in the light emitting device according to the present embodiment, a plurality of active layers 31, 32, 33 having different spectral peaks are integrated in the same layer on the cladding layer 20, and the cladding layer 40 is formed thereon. Is formed, and a filter film 350 is provided thereon.

  About each active layer 31-33, it sets so that each light emission spectrum may become spectrum 400,401,402 demonstrated using FIG. As the filter film 350, the wavelength component is transmitted through the window range 511 having a width narrower than the width of the combined spectrum 410 based on the emission spectrum from each of the active layers 31 to 33, and the temperature variation in the window range 511 causes the active layers 31 to 33 to change in temperature. A dielectric multilayer film smaller than the temperature fluctuation of the emission spectrum from 33 is used. The filter film 350 has the filter characteristics 510 described with reference to FIG. 6 and functions as a band-pass filter that sets the center wavelength of the window range 511 to 590 nm. In addition, the same components as those in FIG. 1 are denoted by the same reference numerals, and redundant description is omitted here.

  The light emitting element is mounted on a package 100 as shown in FIG. However, since the light emitting device already includes the filter film 350, it is not necessary to provide the filter film 300 on the surface of the light output of the package 100 as shown in FIG.

  Therefore, according to the present embodiment, a plurality of active layers 31 to 33 having at least one spectral peak different from the others are provided in the same layer of the light emitting element, and the filter film 350 is provided in the light emitting element, so that the combined spectrum is obtained. Since the light emitting element to be mounted on the package 100 can be completed by forming one, and it is not necessary to provide a filter film on the surface of the light output of the package 100, the same effect as in the second embodiment can be obtained. Can be obtained at a lower cost and with a simple manufacturing process.

[Sixth Embodiment]
In the sixth embodiment, a manufacturing method for manufacturing a light-emitting element having a plurality of active layers having at least one spectral peak different from the others will be described. The emission spectrum of the active layer is determined by the composition of the multi-element mixed crystal grown in the crystal growth step, and here, a method for changing the composition of the active layer will be mainly described.

  Since the spectrum of the emission wavelength of the active layer is determined by the thickness of the layer, a plurality of active layers are formed by crystal growth to a thickness corresponding to the spectrum of the emission wavelength to be set.

Specifically, as shown in the side view of FIG. 12, an oxide film such as silicon dioxide (SiO ₂ ) for inhibiting crystal growth is first laminated on the GaAs substrate 10. The oxide film is patterned by photolithography to leave patterns 520a, 520b, and 520c. When the active layers 34 and 35 by MQW are grown on the surface of the substrate 10 exposed by this patterning, the active layer grows thicker as the area of the exposed portion is smaller. Since the spectrum of the emission wavelength is determined by the thickness of the active layer, when forming the patterns 520a to 520c, each active layer 34 is equal to the area corresponding to the spectrum of the emission wavelength to be set in each of the active layers 34 and 35. , 35 are exposed at the surface of the GaAs substrate 10. Finally, the active layers 34 and 35 are grown on the exposed surface of the GaAs substrate 10.

  Therefore, according to the present embodiment, a plurality of active layers are formed in the same light emitting device by forming a plurality of active layers by growing crystals to a thickness corresponding to the spectrum of the emission wavelength to be set. The light emitting element can be manufactured at low cost.

  In addition, according to this embodiment, by providing a plurality of active layers in a light emitting element, it is sufficient to use a single light emitting element when forming a synthetic spectrum, and thus the process of mounting a plurality of light emitting elements in a package is simplified. Thus, a light emitting device having the same effects as those of the second embodiment can be realized with a low cost and a simple manufacturing process.

  As another example, as shown in the perspective view of FIG. 13, by forming oxide film patterns 530a and 530b whose width continuously changes from end to end on the GaAs substrate 10, GaAs is formed. The area of the exposed portion of the substrate 10 may be continuously changed. In this case, since the thickness of the active layer 36 is continuously changed when the crystal is grown, it is possible to output an emission wavelength whose peak is continuously changed by one light emitting element. It becomes.

It is a perspective view which shows the structure of the light emitting element in 1st Embodiment. It is a perspective view which shows the structure of the light-emitting device using the light emitting element of FIG. It is a graph which shows the spectrum of the light emission wavelength by the light-emitting device of FIG. It is a graph which shows a state when the spectrum of FIG. 3 shifts with temperature fluctuations. It is a perspective view which shows the structure of the light-emitting device in 2nd Embodiment. It is a graph which shows the spectrum of the light emission wavelength by the light-emitting device of FIG. It is a graph which shows a state when the spectrum of FIG. 6 shifts with temperature fluctuations. It is a perspective view which shows the structure of the light-emitting device in 3rd Embodiment. It is a perspective view which shows the structure of the light emitting element in 4th Embodiment. It is a perspective view which shows the structure of the light-emitting device using multiple light emitting elements of FIG. It is a perspective view which shows the structure of the light emitting element in 5th Embodiment. It is a side view of the light emitting element for demonstrating formation of the active layer by crystal growth about the light emitting element in 6th Embodiment. It is a perspective view which shows the structure of another light emitting element for demonstrating formation of the active layer by crystal growth. It is a graph which shows an example of the emission spectrum of LED which changes with temperature fluctuations.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,1a-1c ... Light emitting element 10 ... GaAs substrate 11, 11a-11c ... Light emitting element 20, 40 ... Cladding layer 30, 31, 32, 33 ... Active layer 34, 35 ... Active layer 70 ... Wire 100, 100a-100c Package 101a, 101b Lead frame 102 Epoxy resin 110 Package 300, 300a to 300c Filter film 310, 340, 350 Filter film 520a to 520c Oxide film pattern 530a, 530b Continuous oxide film pattern

Claims (10)

A light emitting element whose emission wavelength spectrum varies with temperature,
A filter film having a bandpass characteristic that transmits a wavelength component in a window range having a narrower width than the spectrum width, and in which the temperature variation in the window range is smaller than the temperature variation in the spectrum;
A light emitting device characterized in that when the temperature fluctuates, a higher level part of the spectrum falls within the window range of the filter film.   The light emitting device according to claim 1, wherein the light emitting device includes a plurality of the light emitting elements having at least one spectral peak different from the others. A plurality of packages for individually accommodating the plurality of light emitting elements;
3. The light emitting device according to claim 2, wherein one filter film is provided so as to cover all the light output surfaces of the plurality of packages. A plurality of packages for individually accommodating the plurality of light emitting elements;
3. The light emitting device according to claim 2, wherein the individual filter films are provided on the surface of the light output of each of the plurality of packages.   3. The light emitting device according to claim 2, wherein the filter film is provided on each of the plurality of light emitting elements, and the plurality of light emitting elements are accommodated in the same package.   The light emitting device according to claim 1, wherein the light emitting element is an LED. An active layer whose emission wavelength spectrum varies with temperature,
A wavelength component is transmitted in a window range having a narrower width than the spectrum width, and the filter film has a temperature variation in the window range smaller than the spectrum temperature variation,
A light emitting element characterized in that a higher level portion of the spectrum falls within the window range of the filter film when the temperature fluctuates.   The light emitting device according to claim 7, wherein the light emitting device has a plurality of the active layers having at least one spectral peak different from the others. A manufacturing method for manufacturing the light emitting device according to claim 8,
A method of manufacturing a light emitting device, wherein the plurality of active layers are formed by crystal growth to a thickness corresponding to a spectrum of an emission wavelength to be set. Laminating an oxide film for inhibiting crystal growth on the surface of the substrate;
Patterning the oxide film, exposing the surface of the substrate corresponding to each active layer by an area corresponding to the spectrum of the emission wavelength to be set in each active layer; and
Crystal growth of each active layer on the exposed portion of the surface of the substrate;
The method for manufacturing a light emitting device according to claim 9, comprising:

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