JPH08236807A - Semiconductor light emitting element and semiconductor light emitting element array chip - Google Patents

Abstract

PURPOSE: To enable to decrease the deviation of the light output of a light emitting element unit or a light emitting element array chip unit by temperature and to obtain higher yield of it independent of the material or the structure of a device, regardless of a surface emitting type or an edge emitting type and without causing a problem of a short life and the poor reliability of a device. CONSTITUTION: A multilayered transparent film 27 formed integrally on an output region comprises a semiconductor film, whose transmittance is wavelength-dependent, that is, it exhibits high transmittance to low-intensity light emitted from a light emitting layer 24 and low transmittance to high intensity light emitted from the light emitting layer 24.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting element and a semiconductor light emitting element array chip used in an optical communication device, an optical information processing device and the like.

[0002]

2. Description of the Related Art Generally, a semiconductor light emitting element is a current injection type device, and self-heating due to current injection causes a temperature rise. Further, the semiconductor light emitting element has a characteristic that the emission intensity decreases when the operating temperature rises due to self-heating or heating by a surrounding heat source. However, the fact that the light output from the semiconductor light emitting element fluctuates depending on the operating temperature in this manner is a serious problem in practical use.

As a method for solving this problem, when it is necessary to strictly control the light output from the semiconductor light emitting element, generally, the light output of the semiconductor light emitting element is monitored by a monitor element to detect the semiconductor light emitting element. By providing an APC (auto power control) circuit so that the light output becomes a constant output, the light output from the semiconductor light emitting element is made constant with respect to the temperature change.

However, in this APC circuit, since the monitor element and other circuits are provided, there are problems that the device becomes complicated and the cost is increased. Further, in the array-shaped semiconductor light emitting device, since it is necessary to control the light output for each bit, there is a problem that it takes a lot of time and effort. Therefore, it is desired to reduce the fluctuation of the light output of the semiconductor light emitting element itself due to the temperature.

In a single semiconductor light emitting device, as a method of reducing the fluctuation of the optical output due to temperature, generally, a method of increasing the hetero barrier in order to reduce the overflow of injected carriers, that is, a band gap difference in a double hetero junction is used. A method of reducing the fluctuation of the optical output due to temperature by using a large value or increasing the carrier concentration of the cladding layer is used. However, such a method alone is not sufficient.

Therefore, in order to make the fluctuation of the light output with temperature extremely small, the band gap of the active layer is changed and the region where the band gap of the active layer is relatively narrow is doped with impurities serving as non-radiative centers. A semiconductor light emitting device having such a structure has been proposed (see Japanese Patent Publication No. 5-77310). In this semiconductor light emitting device, the carriers injected into the active layer are often present in a region where the forbidden band width is relatively narrow at low temperatures, and the range of carrier energy distribution widens as the temperature rises. That is, in general, the influence of the non-emission center is greatly affected at a low temperature where the emission efficiency is high, but the influence of the non-emission center is reduced at a high temperature where the emission efficiency is reduced. For this reason,
It is possible to reduce the fluctuation of the apparent light output due to the temperature.

Further, a semiconductor light emitting device having a structure in which a light extraction method is devised so as not to affect reliability and the like has been proposed. For example, JP-A-4-13227
JP-A No. 4 (1994) discloses light emission having a reflector having a wavelength dependence for compensating for changes in intensity and spectrum of light emitted from the light emitting layer with respect to the light emitting layer at a position opposite to the light extraction portion. Diodes are listed. In this light emitting diode, the light emitting layer has characteristics that the intensity and spectrum of emitted light change depending on temperature. on the other hand,
The reflector has a wavelength dependence that compensates for changes in the intensity and spectrum of the light emitted from the light emitting layer with temperature. That is, for example, when the emission intensity decreases due to an increase in operating temperature and the center wavelength of the light emitted from the light emitting layer moves to the long wavelength side, the reflector has a characteristic of the light emitted from the light emitting layer. It has an emission wavelength dependency that has a high reflectance on the long wavelength side with respect to the central wavelength.

Further, Japanese Utility Model Publication No. 61-1858 discloses that
As an example that can be applied to both surface emitting type devices and edge emitting type devices, an optical filter that emits light emitted from a light emitting element through a lens system and the transmittance increases as the wavelength of transmitted light increases The provided light emitting diode light source is described. With this light emitting diode light source, it is possible to reduce the apparent variation in light output due to temperature. The optical filter is formed independently of the light emitting element and is assembled at the time of mounting, and the light emitting element may be either a surface emitting type or an edge emitting type.

Further, Japanese Laid-Open Patent Publication No. 5-283735 discloses a light emitting element in which an optical filter is provided monolithically to reduce fluctuations in light output due to temperature. FIG. 10 shows an example of the light emitting element. A p-type semiconductor layer 11 in which p-type impurities are diffused is formed on the n-type semiconductor layer 12, a p-side electrode 13 is provided on the upper surface of the p-type semiconductor layer 11, and the SiNx film 14 is provided on the p-type semiconductor layer 11. Is formed,
An n-side electrode 15 is provided below the n-type semiconductor layer 12 to form a light emitting element. Further, a total of 20 layers of TiO ₂ films 16 and SiO ₂ films 17 having different refractive indexes are alternately laminated on the SiNx film 14 to form an optical filter 18. In this light emitting device, at a high temperature, the emission wavelength shifts to the long wavelength side, TiO ₂ as the transmittance of the optical filter 18 is increased as the wavelength of the transmitted light becomes longer
By forming the film 16 and the SiO ₂ film 17 in thickness, the apparent fluctuation of the optical output due to the temperature can be reduced.

[0010]

[Problems to be Solved by the Invention] Japanese Patent Publication No. 5-773
In the semiconductor light emitting device described in Japanese Patent Publication No. 10, since the active layer has a structure in which an impurity serving as a non-emission center is doped, crystal defects easily grow due to energization due to the non-emission center, and deterioration of light quantity is caused. Cause to cause. Therefore, there is a problem that the life of the device is short and the reliability is poor. Further, in the light emitting diode light source described in Japanese Utility Model Laid-Open No. 61-1858, the optical filter is formed independently of the light emitting element and is assembled at the time of mounting, which increases the number of parts, which is not preferable. Further, it is difficult to apply to a device having a structure in which light is exchanged on the same chip such as a monolithic integrated device.

In the light emitting device described in Japanese Patent Laid-Open No. 5-283735, since the dielectric multilayer film is used as the material of the optical filter 18, the optical filter 18 can be formed only on the outer side of the semiconductor layer, and the electrodes are dielectric. Since it cannot be formed on the body multilayer film, it cannot be applied to various devices. Further, the wavelength-transmittance characteristic curve of the optical filter 18 in which a plurality of thin films 16 and 17 having different refractive indexes are alternately laminated is
It is very sensitive to the film thickness and refractive index of each layer. However, with the current technology, a TiO ₂ film, Si,
Since it is very difficult to form a dielectric multilayer film using an O ₂ film, an Al ₂ O ₃ film, etc., with a desired thickness and evenly and reproducibly within the wafer surface, there are large variations.
It has the disadvantage of low yield.

Further, in the light emitting diode described in Japanese Patent Laid-Open No. 4-132274, the light generated in the active layer is absorbed by the active layer itself, so that it can be applied to a surface emitting type device, but the resonance is generated. There is a problem that an edge emitting device having a long device length (element length) has a small effect. The present invention, regardless of the material and structure of the device, regardless of whether it is a surface-emitting type or an edge-emitting type, does not cause a problem that the device has a short life and poor reliability, and a light-emitting element alone or a light-emitting element array chip alone. It is an object of the present invention to provide a semiconductor light emitting device and a semiconductor light emitting device array chip that can reduce the fluctuation of the optical output due to temperature in the device and can be obtained with a high yield.

[0013]

In order to achieve the above object, the invention according to claim 1 has a light emitting layer having a characteristic that the center of the emission intensity and the center of the emission wavelength changes depending on the temperature, and A semiconductor light-emitting device which irradiates light to the outside through a multilayer transmission film formed by sequentially laminating a plurality of thin films having different refractive indexes , The multi-layer permeable membrane,
Light emission with high transmittance at the emission wavelength when the emission intensity of the light emitted from the light emitting layer is low, and low transmittance at the emission wavelength when the emission intensity of the light emitted from the light emitting layer is high It is characterized by being a semiconductor film having wavelength dependence.

According to a second aspect of the present invention, a light emitting layer having a characteristic that the emission intensity decreases with an increase in operating temperature, and the central wavelength of emitted light moves to a longer wavelength side with an increase in operating temperature, A semiconductor that has a multilayer transmission film formed by sequentially laminating a plurality of thin films having different refractive indexes monolithically at a light emitting portion that emits light from a light emitting layer to the outside, and irradiates light to the outside through the multilayer transmission film. In the light emitting element, the multilayer transmission film is a semiconductor film having an emission wavelength dependence of the transmittance which becomes higher on the long wavelength side than the central wavelength of the light emitted from the light emitting layer. It is a thing.

According to a third aspect of the present invention, the light emitting layer has a characteristic that the emission intensity decreases with an increase in operating temperature, and the center wavelength of the emitted light moves to a longer wavelength side with an increase in operating temperature. A semiconductor having a multilayer transmission film formed by sequentially laminating a plurality of thin films having different refractive indexes in a monolithic manner at a light emission portion for emitting light from a light emitting layer to the outside, and irradiating light to the outside through the multilayer transmission film. in the light-emitting element, the multilayer permeable membrane, a value Y ₁ of the transmittance is minimum with respect to the minimum value in a by wavelength lambda ₁ of the light at the emission wavelength dependence of the transmittance, this minimum value Y ₁ adjacent Extreme value and wavelength λ
₂ (λ ₂ > λ ₁ ) and the value Y _{2 at} which the transmittance is maximized, the emission wavelength λ ₀ of the light emitting layer falls within the range of λ ₁ <λ ₀ <λ ₂
Λ ₁ is selected so that the thickness of each layer is a quarter wavelength with respect to λ ₁ , which is a semiconductor film.

According to a fourth aspect of the present invention, in the semiconductor light emitting device according to the first, second or third aspect, the light emitting layer and the multilayer are arranged so that the multilayer transmission film is on the side opposite to the substrate with respect to the light emitting layer. A permeable membrane is laminated on the substrate.

According to a fifth aspect of the present invention, in the semiconductor light emitting device according to the first, second or third aspect, the light emitting layer and the multilayer are arranged so that the multilayer transmission film is on the same side as the substrate with respect to the light emitting layer. A permeable membrane is laminated on the substrate.

The invention according to claim 6 is the same as claim 1,
In the semiconductor light emitting device described in 3, 4, or 5, each of the semiconductor films forming the multilayer transmissive film is formed by an atomic layer growth method of growing one atomic layer at a time.

According to a seventh aspect of the invention, a light emitting layer having characteristics that the center of the light emission intensity and the center of the light emitting wavelength change depending on the temperature, and a light emitting portion for emitting light from the light emitting layer to the outside are monolithically. In a semiconductor light emitting device having a multilayer transmission film formed by sequentially laminating a plurality of thin films having different refractive indexes, and irradiating light to the outside through the multilayer transmission film, the multilayer transmission film is emitted from the light emitting layer. Has a high transmittance at the emission wavelength when the emission intensity of the light is low, and a low transmittance at the emission wavelength when the emission intensity of the light emitted from the emission layer is high. The light emitting portion for emitting light from the light emitting layer to the outside is a laminated end face, and the multilayer transmission film is formed on the laminated end face.

According to an eighth aspect of the present invention, the light emitting layer has a characteristic that the emission intensity is lowered by the increase of the operating temperature, and the central wavelength of the emitted light is shifted to the long wavelength side by the increase of the operating temperature. A semiconductor having a multilayer transmission film formed by sequentially laminating a plurality of thin films having different refractive indexes in a monolithic manner at a light emission portion for emitting light from a light emitting layer to the outside, and irradiating light to the outside through the multilayer transmission film. In the light emitting device, the multilayer transmission film has emission wavelength dependence of the transmittance that becomes higher on the long wavelength side than the central wavelength of the light emitted from the light emitting layer, and the light from the light emitting layer is blocked. The light emitting portion for radiating to the outside is a laminated end face, and the multilayer transmission film is formed on the laminated end face.

According to a ninth aspect of the present invention, a light emitting layer having a characteristic that the emission intensity decreases with an increase in operating temperature, and the central wavelength of emitted light moves to a longer wavelength side with an increase in operating temperature, A semiconductor having a multilayer transmission film formed by sequentially laminating a plurality of thin films having different refractive indexes in a monolithic manner at a light emission portion for emitting light from a light emitting layer to the outside, and irradiating light to the outside through the multilayer transmission film. in the light-emitting element, the multilayer permeable membrane, a value Y ₁ of the transmittance is minimum with respect to the minimum value in a by wavelength lambda ₁ of the light at the emission wavelength dependence of the transmittance, this minimum value Y ₁ adjacent Extreme value and wavelength λ
₂ (λ ₂ > λ ₁ ) and the value Y _{2 at} which the transmittance is maximized, the emission wavelength λ ₀ of the light emitting layer falls within the range of λ ₁ <λ ₀ <λ ₂
Λ ₁ is selected so that the thickness of each layer is a quarter wavelength with respect to λ ₁ , and the light emitting portion for emitting the light from the light emitting layer to the outside is the laminated end face. The multilayer transmission film is formed on the laminated end face.

According to a tenth aspect of the present invention, in the semiconductor light emitting device according to the seventh aspect, a plurality of thin films having different refractive indexes are sequentially laminated on the laminated end face opposite to the laminated end face which is the light emitting portion. Which has a high reflectance at an emission wavelength when the emission intensity of the light emitted from the light emitting layer is low, and the emission intensity of the light emitted from the light emitting layer is high. It is characterized in that the reflectance has a low reflectance at the emission wavelength at that time and the emission wavelength has a dependency on the reflectance.

According to an eleventh aspect of the present invention, in the semiconductor light emitting device according to the eighth and ninth aspects, a plurality of thin films having different refractive indexes are sequentially laminated on the laminated end face opposite to the laminated end face which is a light emitting portion. Characterized in that the multilayer reflective film has an emission wavelength dependency of the reflectance that is higher on the long wavelength side than the central wavelength of the light emitted from the light emitting layer. It is what

According to a twelfth aspect of the present invention, in the semiconductor light emitting device according to the seventh, eighth or ninth aspect, a multilayer film similar to the multilayer transmission film is formed on a laminated end face opposite to the laminated end face which is a light emitting portion. It is characterized in that it has a multilayer reflective film formed by laminating a metal film thereon.

The invention of claim 13 is the same as claims 1, 2 and
The semiconductor light emitting devices described in 3, 4, 5, 6, 7, 8, 9, 10, 11 or 12 are monolithically arranged.

[0026]

According to the first aspect of the invention, the center of the light emission intensity and the light emission wavelength of the light emitting layer changes depending on the temperature, and the light from the light emitting layer is irradiated to the outside through the multilayer transmission film. The multilayer transmission film has a high transmittance at the emission wavelength when the emission intensity of the light emitted from the light emitting layer is low, and a low transmittance at the emission wavelength when the emission intensity of the light emitted from the light emitting layer is high. Therefore, the change in the emission intensity due to the temperature is compensated, and the change in the emission intensity with respect to the temperature change is reduced. Furthermore, since the multilayer transmissive film is a semiconductor film, the electrode can be formed on the multilayer transmissive film, so that there is less restriction on the formation position of the multilayer transmissive film.

According to the second aspect of the present invention, the emission intensity of the light-emitting layer decreases as the operating temperature rises, and the central wavelength of the emitted light moves to the long wavelength side as the operating temperature rises. The light from the light emitting layer is radiated to the outside through the multilayer transmission film, and the multilayer transmission film has a high transmittance on the long wavelength side of the central wavelength of the light emitted from the light emission layer. Therefore, the decrease in emission intensity due to the temperature rise is compensated. Furthermore, since the multilayer transmissive film is a semiconductor film, the electrode can be formed on the multilayer transmissive film, so that there is less restriction on the formation position of the multilayer transmissive film.

In the invention according to claim 3, the light emitting layer is operated.
Emission intensity decreases and radiates as temperature rises
Center wavelength of light moves to longer wavelength side due to increase in operating temperature
I do. Light from the light emitting layer is radiated to the outside through the multi-layer transparent film.
Is done. This multilayer transmissive film has a dependency on the emission wavelength of the transmittance.
Is the minimum value in the wavelength λ₁Is extremely transmissive to
Small value Y₁And this minimum value Y₁Is an extreme value next to
Wavelength λ₂(Λ₂> Λ₁) Light has maximum transmittance
Value Y₂And the emission wavelength λ of the light emitting layer₀Enter and λ ₁<Λ₀<
λ₂So that λ₁And the thickness of each layer is λ₁Against
By being configured to have a quarter wavelength,
Higher on the long wavelength side than the central wavelength of the light emitted from the light emitting layer.
Results in high transmittance. Therefore, the emission intensity of the
The drop is compensated. Furthermore, the multilayer transparent film is a semiconductor film
By doing so, electrodes can be formed on the multi-layer transparent film,
There are less restrictions on the formation position of the multilayer permeable film.

According to a fourth aspect of the present invention, in the semiconductor light emitting device according to the first, second or third aspect, the light emitting layer and the multilayer transmissive film are laminated on the substrate, and the multilayer transmissive film is opposite to the substrate with respect to the light emitting layer. And the decrease in emission intensity due to temperature rise is compensated.

According to a fifth aspect of the present invention, in the semiconductor light emitting device according to the first, second or third aspect, the light emitting layer and the multilayer transmissive film are laminated on the substrate, and the multilayer transmissive film is the same as the substrate with respect to the light emitting layer. And the decrease in emission intensity due to the temperature rise is compensated.

According to the invention of claim 6, claims 1, 2,
In the semiconductor light emitting device described in 3, 4, or 5, each semiconductor film forming the multilayer transmissive film is formed by an atomic layer growth method of growing one atomic layer at a time, and the yield is good, and the multilayer transmissive film has a film thickness. It is formed with good controllability, and changes in emission intensity with respect to temperature changes are small.

In the invention according to claim 7, the emission intensity and the center of the emission wavelength of the light emitting layer change depending on the temperature, and the light from the light emitting layer is radiated to the outside from the laminated end face through the multilayer transmission film. This multilayer transmission film has a high transmittance at the emission wavelength when the emission intensity of the light emitted from the emission layer is low, and a low transmittance at the emission wavelength when the emission intensity of the light emitted from the emission layer is high. . Therefore, the change in the emission intensity due to the temperature is compensated, and the change in the emission intensity is reduced.

In the eighth aspect of the present invention, the emission intensity of the light-emitting layer decreases as the operating temperature rises, and the central wavelength of the emitted light moves to the long wavelength side as the operating temperature rises. The light from the light emitting layer is radiated to the outside from the laminated end face through the multilayer transmission film, and this multilayer transmission film has a higher transmittance on the long wavelength side than the central wavelength of the light emitted from the light emission layer.
Therefore, the decrease in emission intensity due to the temperature rise is compensated.

In the invention according to claim 9, the emission intensity of the light-emitting layer decreases with an increase in operating temperature, and the central wavelength of the emitted light moves to the longer wavelength side with an increase in operating temperature. The light from the light emitting layer is emitted to the outside from the end face of the stack through the multilayer transmission film. Multi-permeable membrane, a value Y ₁ of the transmittance is minimum with respect to the minimum value in a by wavelength lambda ₁ of the light at the emission wavelength dependence of the transmittance, a the minimum value Y ₁ and the neighboring extremum If the emission wavelength λ ₀ of the light emitting layer falls between the value Y ₂ and the value Y ₂ where the transmittance is maximum for the light of the wavelength λ ₂ (λ ₂ > λ ₁ ),
Λ ₁ is selected so that ₁ <λ ₀ <λ ₂ and the thickness of each layer is λ ₁
In contrast, since the wavelength is ¼ wavelength, the transmittance is higher on the long wavelength side than the central wavelength of the light emitted from the light emitting layer, and the decrease in emission intensity due to the temperature rise is compensated.

According to a tenth aspect of the present invention, in the semiconductor light emitting device according to the seventh aspect, a plurality of thin films having different refractive indexes are sequentially laminated on the laminated end face opposite to the laminated end face which is the light emitting portion. The multilayer reflective film has a high reflectance at the emission wavelength when the emission intensity of the light emitted from the light emitting layer is low, and a low reflectance at the emission wavelength when the emission intensity of the light emitted from the light emitting layer is high. Therefore, the light reflected by the multilayer reflective film is used, and the change in emission intensity with respect to the temperature change is reduced.

According to the invention of claim 11, claims 8 and 9 are provided.
In the semiconductor light emitting device described above, the multilayer reflection film formed by sequentially laminating a plurality of thin films having different refractive indexes on the laminated end face opposite to the laminated end face which is the light emitting portion is the center of the light emitted from the light emitting layer. The reflectance is higher on the longer wavelength side than the wavelength. Therefore, the light reflected by the multilayer reflective film is used, and the change in emission intensity with respect to the temperature change is reduced.

According to the twelfth aspect of the invention, the seventh and eighth aspects are provided.
Alternatively, in the semiconductor light emitting device according to the item 9, light reflected by a multilayer reflection film formed by laminating a metal film on a multilayer film similar to the multilayer transmission film on the lamination end face opposite to the lamination end face which is a light emitting portion is used. As a result, the change in emission intensity with respect to the temperature change is reduced. Further, it is possible to simultaneously form the multi-layer transmissive film and the multi-layer reflective film except for the metal film.

According to the thirteenth aspect of the present invention, the first, second, third, fourth, fifth, sixth and seventh aspects are arranged in a monolithic manner.
In the semiconductor light emitting device described in 8, 9, 10, 11 or 12, the influence of heat generation due to the operation of other devices is small, and the distribution of the optical output in the chip is small even if the temperature distribution occurs in the chip.

[0039]

FIG. 1 shows a first embodiment of the present invention. This first
The embodiment is an embodiment of the invention described in claims 1, 2, 3, 4, and 6, and is an example of a semiconductor light emitting element composed of a surface emitting type light emitting diode, which emits light in the direction of a thick arrow in FIG. discharge. This surface-emitting light-emitting diode is an n-type GaA formed on a substrate 21 made of n-type GaAs by MOCVD or the like.
s buffer layer 22, n-type Al _0.45 Ga _0.55 As
Clad layer 23 consisting of Al, _0.19 Ga which is the light emitting layer
Active layer 24 made of _0.81 As, p-type Al _0.45 Ga _0.55 A
s clad layer 25, p + type Al _0.45 Ga _0.55 A
A current spreading layer 26 made of s is sequentially stacked to form a light emitting portion. This has a double hetero structure. Further, on the current diffusion layer 26 in the light emitting portion, an N-layer multi-layer transmission film 27 made of AlAs / Al _0.42 Ga _0.58 As is formed. This multilayer permeable membrane 27
Is selected on the material, its film thickness and refractive index so that the transmittance increases when the temperature rises and the emission wavelength of the light emitting part shifts to the long wavelength side, and is laminated on the light emitting end face. .

Here, an electromagnetic solution method using matrix calculation will be described as a method of calculating the reflectance and the transmittance of the multilayer film. When light of wavelength λ is incident on a thin film having a refractive index n and a thickness d at an incident angle φ ₀ , the corresponding matrix is

[0041]

[Equation 1]

It becomes However, δ = 2π / λndcosφ ₁
Where φ ₁ is the refractive index in the thin film, and w is ncosφ (p component) and n / cosφ (s component). The matrix for the N-layer multilayer film is

[0043]

[Equation 2]

Then, the reflectance R and the transmittance T of the multilayer film are

[0045]

(Equation 3)

It is represented by Here, ω ₀ and ω _g are values for the medium having the refractive index n ₀ and the substrate having the refractive index n _g .

In FIG. 2, the transmittance of the multilayer film 27 is obtained by using the equation (4), where the thickness of the multilayer transmission film 27 as the multilayer film is a quarter wavelength with respect to the wavelength λ ₁ . The conceptual diagram of time is shown. As can be seen from FIG. 2, the multilayer film 27 has a wavelength of λ ₁
Thus, the transmittance becomes the minimum value Y ₁ . The wavelength-transmittance characteristic curve shown in FIG. 2 is wavy, and the multilayer film 27 has a wavelength λ ₁
The transmittance has a maximum value Y ₂ at a longer wavelength λ ₂ . Here, in the first embodiment, the multilayer transmission film 27 as a multilayer film is used.
Is provided in the light emitting portion that radiates the light from the active layer 24 to the outside, and the emission wavelength is between λ ₁ and λ _{2 in the} temperature range that is actually used. When the central wavelength λ ₀ of the light is shifted to the long wavelength side, the transmittance of the multilayer film 27 with respect to the light output is increased, and the temperature dependence of the emission intensity is compensated. That is, the multilayer film 27 is used to compensate for the temperature dependence of the emission intensity of the semiconductor light emitting device.
For a semiconductor light emitting device having a central wavelength of light output of λ ₀ , λ ₁ is selected so that λ ₀ falls between λ ₁ and λ _2, and the thickness of each layer is divided into quarters with respect to λ ₁ . It is decided to have one wavelength.

In the first embodiment, specifically, ALE
By the (Atomic Layer Epitaxy) method, the refractive index n =
A layer 28 of 3.03 p-type AlAs and a refractive index n =
A multilayer transmission film 2 composed of N layers of multilayer thin films by alternately stacking 3.43 layers 29 of p-type Al _0.42 Ga _0.58 As
7 are formed. That is, the multi-layer transmission film 27 is formed by first stacking 561Å layers 28 of p-type AlAs and then p-type AlAs.
A layer 29 made of Al _0.42 Ga _0.58 As of type 496 Å is stacked, and two layers 28 and 29 are alternately formed in this order to form a total of 6 pairs.

In the first embodiment, the multilayer permeable film 27
A contact layer 30 made of p-type GaAs is formed on the above. The contact layer 30 is selectively etched, and the p-side electrode 31 is formed only on the contact layer 30. The n-side electrode 3 is provided below the substrate 21.
2 is formed. The surface emitting light emitting diode of the first embodiment mainly emits light from the active layer 24 to the outside through the multilayer transmission film 27, that is, a portion of the multilayer transmission film 27 where the contact layer 30 is removed by etching. From the outside, the light having a central wavelength of about 740 nm is irradiated to the outside at room temperature.

In the surface emitting light emitting diode of the first embodiment, the light emitting characteristics without the multilayer transmission film 27 are as shown in FIGS. That is, the light emission output decreases as the temperature rises as shown in FIG. 3, and the temperature dependence of the light emission output becomes relatively large because the band gap energy difference between the active layer 24 and the cladding layers 23 and 25 is not so large. . Further, in the emission spectrum, the height of the emission peak decreases with increasing temperature, and at the same time, the entire emission spectrum shifts to the long wavelength side with increasing temperature.

FIG. 5 shows the calculation result of the transmittance with respect to the emission wavelength of the multilayer transmission film 27 under the above conditions in the first embodiment. The multilayer transmission film 27 has a higher transmittance on the longer wavelength side (at a wavelength up to 785 nm in the first embodiment) than the central wavelength (peak wavelength) of the light emitted from the active layer 24.
Further, the transmittance of the multilayer transmission film 27 with respect to the emission wavelength is set where the change in transmittance is large, that is, where the slope of the transmittance curve is large.

As described above, the multi-layered transparent film 27 has a semiconductor material, a film thickness and a refractive index which are the minimum values of the transmittance on the shorter wavelength side than the central wavelength of the light output from the surface emitting light emitting diode of the first embodiment. Therefore, the maximum value of the transmittance is selected to be on the longer wavelength side than the central wavelength of the optical output. That is, the multilayer transmission film 27 is selected so that the film thickness is ¼ of the wavelength which is slightly shorter than the emission peak wavelength.

In this case, it is necessary to accurately control the film thickness and the refractive index of the multilayer transmission film 27. The reason for this is that the wavelength-transmittance characteristic curve of such a multilayer transmission film 27 is
This is because it is very sensitive to the film thickness and the refractive index of 7. FIG. 6 shows a calculation result of the wavelength-transmittance characteristic in the example in which the film thickness of the multilayer transmission film 27 is set to the above-mentioned optimum value and optimum value ± 10%. As can be seen from FIG. 6, when the film thickness of the multi-layer transmission film 27 deviates from the optimum value, the above-mentioned effect disappears, so that the film thickness and the refractive index of the multi-layer transmission film 27 must be controlled accurately. From such a point of view, the multilayer permeable film 27 can be formed by using a normal MOCVD method, but ALE (Atomic Layer Epitaxy) that can control each atomic layer is used.
It is preferable to use the method y) because the film thickness of each layer can be strictly controlled between lots within the wafer surface.

Further, in the structure as in this embodiment, the multi-layer transmission film 27 is strictly controlled in the film thickness of each layer by using a device capable of growing crystals in both growth modes of the ALE method and the MOCVD method. MOC that can be formed by the ALE method and has a higher growth rate in the light emitting portion and higher luminous efficiency than the ALE method.
It is desirable to form by the VD method. Of course, it is desirable that the material of the multilayer transmission film 27 is a material having an energy band gap larger than that of the light emitting layer.

FIG. 7 shows the temperature dependence of the emission intensity of the light emitted from the active layer 24 through the multilayer transmission film 27 in this embodiment. In this example, since the multilayer transmission film 27 is formed, the temperature dependence of the emission intensity is flat, and it can be seen that the influence of the temperature rise of the emission intensity is canceled out. Further, if the multilayer transmissive film 27 is used under the condition that the slope of the wavelength-transmittance characteristic curve is further increased, the temperature dependence of the emission intensity is further flattened. In addition, the multilayer permeable film 27
The material may be formed by combining a semiconductor film and a dielectric film, such as a structure in which a dielectric film is formed on a semiconductor film.

The first embodiment is an embodiment of the invention described in claim 1, and the active layer 2 as a light emitting layer having a characteristic that the centers of the emission intensity and the emission wavelength change depending on the temperature.
4 and a plurality of thin films 28, 2 having monolithically different refractive indexes at a light emitting portion for emitting light from the light emitting layer 24 to the outside.
In a semiconductor light emitting element having a multilayer transmission film 27 formed by sequentially stacking 9 and irradiating light to the outside through the multilayer transmission film 27, the multilayer transmission film 27 emits light emitted from the light emitting layer 24. It is a semiconductor film having a high transmittance at the emission wavelength when the intensity is low, and a low transmittance at the emission wavelength when the emission intensity of the light emitted from the light emitting layer 24 is high. In addition, it is possible to compensate for changes in emission intensity due to temperature without causing the problem of short device life and poor reliability, and it is possible to reduce changes in emission intensity with respect to temperature changes. It is possible to realize an optical integrated device, an optical communication system, and the like that operate stably with respect to fluctuations in Further, since the multi-layer transmissive film is a semiconductor film, the multi-layer transmissive film can be formed anywhere on the semiconductor layer on which epitaxial growth is possible, and electrodes can be formed on the multi-layer transmissive film. Therefore, the present invention can be applied to various devices regardless of surface emitting type and edge emitting type regardless of the material and structure of the device.

The first embodiment is an embodiment of the invention described in claim 2, in which the emission intensity is lowered by the rise of the operating temperature, and the central wavelength of the emitted light is increased by the rise of the operating temperature. An active layer 24 as a light emitting layer having a property of moving to the wavelength side, and a plurality of thin films 28, 29 having different refractive indexes are sequentially laminated in a light emitting part for emitting light from the light emitting layer 24 to the outside. In the semiconductor light-emitting device that has a multilayer transmission film 27 formed by irradiating light to the outside through the multilayer transmission film 27, the multilayer transmission film 27 includes a light-emitting layer 24.
Since it is a semiconductor film that has emission wavelength dependence of the transmittance that becomes higher on the long wavelength side than the central wavelength of the light emitted from the device, it does not cause the problem of short device life and poor reliability. It is possible to realize an optical integrated device, an optical communication system, and the like, which can compensate for a decrease in light emission intensity due to a temperature rise, and operate stably with respect to temperature distribution and ambient temperature fluctuations. Further, since the multi-layer transmissive film is a semiconductor film, the multi-layer transmissive film can be formed anywhere on the semiconductor layer on which epitaxial growth is possible, and electrodes can be formed on the multi-layer transmissive film. Therefore, the present invention can be applied to various devices regardless of surface emitting type and edge emitting type regardless of the material and structure of the device.

The first embodiment is an embodiment of the invention described in claim 3, in which the emission intensity is lowered by the rise of the operating temperature, and the central wavelength of the emitted light is increased by the rise of the operating temperature. An active layer 24 as a light emitting layer having a property of moving to the wavelength side, and a plurality of thin films 28, 29 having different refractive indexes are sequentially laminated in a light emitting part for emitting light from the light emitting layer 24 to the outside. In the semiconductor light emitting device which has a multilayer transmission film 27 formed by irradiating light to the outside through the multilayer transmission film 27, the multilayer transmission film 27 has a minimum value in the emission wavelength dependence of the transmittance and has a wavelength λ ₁ Value Y _{1 at} which the transmittance is minimum with respect to the light of, and the transmittance is maximum with respect to light having a wavelength λ ₂ (λ ₂ > λ ₁ ) which is an extreme value adjacent to this minimum value Y _1. Between the value Y ₂ and the emission wavelength λ ₀ of the light emitting layer 24
Since there is a semiconductor film with λ ₁ <λ ₀ <the thickness of each layer to choose lambda ₁ so that the lambda ₂ is configured such that a quarter wavelength for the lambda ₁ enters, the device Without causing the problem of short life and poor reliability, it is possible to compensate for the decrease in luminescence intensity due to temperature rise and reduce the change in luminescence intensity due to temperature changes. Optical integrated device that operates stably against
An optical communication system etc. can be realized. Furthermore, since the multilayer transparent film is a semiconductor film, the multilayer transparent film can be formed anywhere on the semiconductor layer capable of epitaxial growth.
There are few restrictions on the formation position of the multi-layer transmission film, such as electrodes formed on the multi-layer transmission film, and it can be applied to various devices regardless of the material and structure of the device, regardless of the surface emitting type and the edge emitting type.

The first embodiment is the embodiment of the invention described in claim 4, wherein in the semiconductor light emitting device according to claim 1, 2 or 3, the multilayer transmission film 27 is provided on the light emitting layer 24 as a substrate. Since the light emitting layer 24 and the multilayer transmissive film 27 are laminated on the substrate 21 so as to be on the side opposite to 21, it is possible to reduce the change in the emission intensity due to the temperature change as described above.

The first embodiment is an embodiment of the invention according to claim 6, and in the semiconductor light emitting device according to claim 1, 2, 3, 4 or 5, each of the multilayer transparent films 27 is formed. Since the semiconductor films 28 and 29 are formed by the atomic layer growth method of growing one atomic layer at a time, the yield is good, the multilayer transmission film 27 can be formed with good film thickness controllability, and the emission intensity changes with temperature changes. Can be reduced.

The second embodiment of the present invention is described in claims 1, 2, and
It is another embodiment of the invention described in 3, 4, and 6, and is an example of a semiconductor light emitting element including a surface emitting light emitting diode. The difference between the second embodiment and the first embodiment is that the multilayer transmission film 2
7 is the thickness of each layer. In the second embodiment, ALE (Ato
mic Layer Epitaxy method, refractive index n = 3.03
With a layer 28 of p-type AlAs and a refractive index n = 3.43.
The layer 29 made of p-type Al _0.42 Ga _0.58 As is alternately laminated to form the multilayer transmissive film 27 made of a multilayer thin film of N layers.
Layer 2 consisting of 5 Å and then p-type Al _0.42 Ga _0.58 As
9 are stacked by 481 Å, and two layers 28 and 29 are alternately formed in this order to form a total of 6 pairs to form the multilayer permeable film 27.

In the surface emitting light emitting diode of the second embodiment, the light emitting characteristics without the multilayer transmissive film 27 are the same as the light emitting characteristics without the multilayer transmissive film 27 in the first embodiment. The calculation result of the transmittance with respect to the emission wavelength of the multilayer transmission film 27 under the above-mentioned conditions in this example is shown in FIG. The multilayer transmission film 27 has a higher transmittance on the long wavelength side than the peak wavelength of the light emitted from the active layer 24. As described above, in the second embodiment, the material of the multilayer transmission film 27 is such that the minimum value of the transmittance is on the shorter wavelength side than the emission wavelength and the maximum value of the transmittance is on the longer wavelength side than the emission wavelength. And the film thickness and refractive index are selected. That is, the thickness of the multilayer transmission film 27 is set to be a quarter wavelength with respect to a wavelength slightly shorter than the emission wavelength.

The second embodiment differs from the first embodiment in that the transmittance of the multilayer transmission film 27 is set to be higher than that in the first embodiment. That is, the emission wavelength is close to the maximum value of the transmittance. Second
In the embodiment, the light output is high because the transmittance is generally higher than that in the first embodiment. However, in the second embodiment, the rate of change in the transmittance is smaller than that in the first embodiment, so the effect of improving the temperature characteristics is small. The second embodiment as described above is mainly applied to a case where a high light output is required and a certain degree of temperature characteristic improving effect is sufficient. In this way, the thickness of each layer of the multilayer permeable film 27 may be selected according to the application. In the second embodiment, the same effect as in the above-described first embodiment can be obtained.

As described above, in the semiconductor light emitting devices of the first and second embodiments, the active layer 24 and the multilayer transmissive film 27 are laminated on the substrate 21, and the multilayer transmissive film 27 is formed on the active layer 24 as a substrate. Although the structure is provided on the side opposite to the substrate 21, the multilayer transmission film 27 is provided on the same side as the substrate 21 with respect to the active layer 24, that is, the structure in which light is extracted from the substrate 21 side is also the first embodiment. The same effect as the example and the second embodiment can be obtained. However, in this structure, it is necessary to use a substrate that is optically transparent with respect to the emission wavelength or to remove a part of the substrate to form the light extraction portion.

FIG. 9 shows a third embodiment of the present invention having a structure for extracting light from the substrate side. The third embodiment is another embodiment of the invention described in claims 1, 2, 3, 5 and 6, and is an example of a semiconductor light emitting element including a surface emitting type light emitting diode. In the third embodiment, the buffer layer 33 made of n-type GaAs is formed on the substrate 32 made of n-type GaAs by MOCVD or the like, and then ALE (Atomic Layer Epi).
axy) method or the like to obtain p-type AlAs with a refractive index n = 3.03.
And a p-type Al _0.42 having a refractive index n = 3.43.
Layers 35 made of Ga _0.58 As are alternately laminated to form a multilayer transmission film 36 made of N layers of multilayer thin films. In this case, the layer 34 made of p-type AlAs is first stacked 561 Å, and then the layer 35 made of p-type Al _0.42 Ga _0.58 As is formed into 4 layers.
A total of 6 pairs of two layers 34 and 35 are alternately stacked in this order to form a multilayer permeable film 36.

Next, a clad layer 37 made of n-type Al _0.45 Ga _0.55 As, an active layer 38 made of Al _0.19 Ga _0.81 As which is a light-emitting layer, and a p-type Al layer are formed on the multilayer transmission film 36 by MOCVD or the like. _0.45 Ga _0.55 consisting as cladding layer 39, p + -type Al _0.45 Ga _0.55 contact layer 41 made of the current diffusion layer 40, p-type GaAs of as is sequentially stacked light emitting portion is formed. This has a double hetero structure. Then, a p-side electrode 42 is formed on the contact layer 41, and n-side is formed on the substrate 32 side.
The side electrode 43 is formed. Further, the substrate 32 and the buffer layer 33 are selectively etched to form the light extraction portion 44.

In the surface emitting light emitting diode of the third embodiment as described above, the light from the active layer 38 is mainly used for the multilayer transmission film 3.
6, the light is emitted from the light extraction portion 44 to the outside, that is, the light having the central wavelength of about 740 nm is emitted to the outside from the light extraction portion 44 in which the substrate 32 and the buffer layer 33 are removed by etching on the multilayer transmission film 36. . Of course, the material of the multilayer transmission film 36 is preferably a material having an energy band gap larger than that of the light emitting layer.

The material, film thickness and refractive index of the multilayer transmission film 36 are selected so that the transmittance increases when the center wavelength of the optical output shifts to the long wavelength side due to temperature rise. That is, in the third embodiment, similarly to the first and second embodiments, the transmission of a multilayer transparent film 36 is longer wavelengths lambda ₂ than the wavelength lambda ₁ and the transmittance at a wavelength lambda ₁ becomes a minimum value Y ₁ The ratio has a maximum value Y ₂ , and the emission wavelength of the light emitting unit is between λ ₁ and λ _{2 in the} temperature range in which it is actually used. Then, when the temperature rises and the central wavelength λ ₀ of the light output shifts to the long wavelength side, the transmittance of the multilayer transmission film 36 with respect to the light output increases, and the temperature dependence of the emission intensity is compensated. That is, the multilayer permeable membrane 36 in order to compensate for the temperature dependence of the emission intensity of the semiconductor light emitting element, lambda ₀ the semiconductor light emitting device center wavelength of the light output is lambda ₀ is from lambda ₁ to lambda ₂ Choose a λ ₁ that is in between and make the thickness of each layer a quarter of that λ ₁ .
It is decided to have a wavelength.

Here, for the same reason as in the first and second embodiments, the multi-layer transmission film 36 can be produced by using the ordinary MOCVD method, but ALE that can control each atomic layer.
When it is formed using the (Atomic Layer Epitaxy) method,
It is desirable because the film thickness of each layer can be strictly controlled between lots within the wafer surface. Further, in the structure like this embodiment, 1
The multi-layer transmission film 36 is formed by the ALE method capable of strictly controlling the film thickness of each layer by using an apparatus capable of growing crystals in both growth modes of the ALE method and the MOCVD method on the table, and the light emitting portion has a growth rate of the ALE method. M that can be larger and have higher luminous efficiency
It is desirable to form by the OCVD method. As described above, in the third embodiment, since the multi-layered transparent film 36 is a semiconductor film, it can be formed directly on the substrate, between layers or on the top of the crystal layer, so that the width of the applicable device can be increased. Becomes wider.

As described above, the third embodiment is an embodiment of the invention described in claim 1, and is an active layer as a light emitting layer having characteristics that the centers of the emission intensity and the emission wavelength change depending on the temperature. 38, and a multi-layer transmissive film 36 in which a plurality of thin films 34, 35 having different monolithically different refractive indexes are sequentially laminated at a light emitting portion for radiating light from the light emitting layer 38 to the outside. In the semiconductor light emitting device that irradiates light to the outside through the film 36, the multilayer transmissive film 36 has a high transmittance at the emission wavelength when the emission intensity of the light emitted from the emission layer 38 is low, and is emitted from the emission layer 38. Since the semiconductor film has a light emission wavelength dependency of the transmittance, which has a low transmittance at the light emission wavelength when the light emission intensity is high, it does not cause the problem of short lifetime of the device and poor reliability. Depending on the temperature of To be able to compensate for changes can be reduced variations in emission intensity with respect to temperature changes, the optical integrated device which operates stably against temperature distribution and variations in ambient temperature, it can be realized an optical communication system or the like. Furthermore, since the multilayer transparent film is a semiconductor film, the multilayer transparent film can be formed anywhere on the semiconductor layer capable of epitaxial growth.
In addition, since there are few restrictions on the formation position of the multilayer transparent film, such as electrodes can be formed on the multilayer transparent film, it can be applied to various devices regardless of surface emitting type and edge emitting type regardless of the material and structure of the device. .

The third embodiment is an embodiment of the invention described in claim 2, in which the emission intensity is lowered by the rise of the operating temperature, and the central wavelength of the radiated light is lengthened by the rise of the operating temperature. An active layer 38 serving as a light emitting layer having a property of moving to the wavelength side, and a plurality of thin films 34, 35 having different refractive indexes in a monolithic manner are sequentially laminated on a light emitting portion for emitting light from the light emitting layer 38 to the outside. In the semiconductor light-emitting device having the multilayer transmission film 36 formed by irradiating light to the outside through the multilayer transmission film 36, the multilayer transmission film 36 includes a light-emitting layer 38.
Since it is a semiconductor film that has emission wavelength dependence of the transmittance that becomes higher on the long wavelength side than the central wavelength of the light emitted from the device, it does not cause the problem of short device life and poor reliability. It is possible to realize an optical integrated device, an optical communication system, and the like, which can compensate for a decrease in light emission intensity due to a temperature rise, and operate stably with respect to temperature distribution and ambient temperature fluctuations. Further, since the multi-layer transmissive film is a semiconductor film, the multi-layer transmissive film can be formed anywhere on the semiconductor layer on which epitaxial growth is possible, and electrodes can be formed on the multi-layer transmissive film. Therefore, the present invention can be applied to various devices regardless of surface emitting type and edge emitting type regardless of the material and structure of the device.

The third embodiment is an embodiment of the invention described in claim 3, in which the emission intensity is lowered by the rise of the operating temperature, and the central wavelength of the emitted light is increased by the rise of the operating temperature. An active layer 38 as a light emitting layer having a property of moving to the wavelength side, and a plurality of thin films 34, 35 having different refractive indexes are sequentially laminated in a light emitting portion for emitting light from the light emitting layer 38 to the outside. In the semiconductor light emitting device that has a multilayer transmission film 36 formed by irradiating light to the outside through the multilayer transmission film 36, the multilayer transmission film 36 has a minimum value in the emission wavelength dependence of the transmittance and has a wavelength λ ₁ Value Y _{1 at} which the transmittance is minimum for the light of, and the transmittance is maximum for light of a wavelength λ ₂ (λ ₂ > λ ₁ ) which is an extreme value adjacent to this minimum value Y ₁ Between the value Y ₂ and the emission wavelength λ ₀ of the light emitting layer 38
Since there is a semiconductor film with λ ₁ <λ ₀ <the thickness of each layer to choose lambda ₁ so that the lambda ₂ is configured such that a quarter wavelength for the lambda ₁ enters, the device Without causing the problem of short life and poor reliability, it is possible to compensate for the decrease in luminescence intensity due to temperature rise and reduce the change in luminescence intensity due to temperature changes. Optical integrated device that operates stably against
An optical communication system etc. can be realized. Furthermore, since the multilayer transparent film is a semiconductor film, the multilayer transparent film can be formed anywhere on the semiconductor layer capable of epitaxial growth.
There are few restrictions on the formation position of the multi-layer transmission film, such as electrodes formed on the multi-layer transmission film, and it can be applied to various devices regardless of the material and structure of the device, regardless of the surface emitting type and the edge emitting type.

The third embodiment is an embodiment of the invention according to claim 5, wherein in the semiconductor light emitting device according to claim 1, 2 or 3, the multilayer transmissive film 36 is provided on the light emitting layer 38 as a substrate. Since the light emitting layer 38 and the multilayer transmissive film 36 are laminated on the substrate 32 so as to be on the same side as 32, the change in the emission intensity due to the temperature change can be reduced as described above.

The first embodiment is an embodiment of the invention according to claim 6, and in the semiconductor light emitting device according to claim 1, 2, 3, 4 or 5, each of the multilayer transparent films 36 is formed. Since the semiconductor films 34 and 35 are formed by the atomic layer growth method of growing one atomic layer at a time, the yield is good, the multilayer transmission film 36 can be formed with good film thickness controllability, and the emission intensity changes with temperature changes. Can be reduced.

FIG. 11 shows a fourth embodiment of the present invention. The fourth embodiment is an embodiment of the invention described in claims 7, 8 and 9, and is an example of an edge emitting semiconductor light emitting device composed of an edge emitting light emitting diode, and is directed in the direction of the thick arrow in FIG. Emits light. This edge emitting type light emitting diode has a buffer layer 52 made of n-type GaAs and an n-type Al _{0.45 formed} on a substrate 51 made of n-type GaAs by MOCVD or the like.
The cladding layer 53 made of Ga _0.55 As and the light emitting layer A.
l _0.19 Ga _0.81 As active layer 54, p-type Al _0.45
A clad layer 55 made of Ga _0.55 As and a contact layer 56 made of p-type GaAs are sequentially laminated to form a double hetero structure.

The p-side electrode 5 is formed on the contact layer 56.
7 is formed, and an n-side electrode 58 is formed below the substrate 51. The main body of such an edge-emitting light emitting diode mainly emits light having a wavelength of 745 nm at room temperature from the light emitting end surface obtained by the cleavage method or the like. In the body of the edge emitting type light emitting diode, a multi-layer transmission film 59 is formed on a laminated end surface which is a light emitting end surface.
The material, the film thickness, and the refractive index are selected so that the transmittance increases when the temperature rises and the emission wavelength of the body of the edge-emitting light emitting diode shifts to the long wavelength side.

The material, film thickness and refractive index of the multilayer transmission film 59 are selected so that the transmittance increases when the center wavelength of the optical output shifts to the long wavelength side due to the temperature increase. That is, in the fourth embodiment, as in the first embodiment, the multilayer transmission film 59 has a wavy transmittance characteristic curve as shown in FIG. 2, and the transmittance has a minimum value Y ₁ at the wavelength λ _1. And the transmittance has a maximum value Y ₂ at a wavelength λ ₂ longer than the wavelength λ ₁ . In this case, the emission wavelength of the main body is between λ ₁ and λ _{2 in the} temperature range in which the edge emitting light emitting diode is actually used. Then, when the temperature rises and the central wavelength λ ₀ of the light output shifts to the long wavelength side, the transmittance of the multilayer transmission film 59 with respect to the light output increases, and the temperature dependence of the emission intensity is compensated. That is, the multilayer transparent film 59, to compensate for the temperature dependence of the emission intensity, lambda ₀ with respect to the main body of the center wavelength of the light output is lambda ₀ edge-emitting light-emitting diodes from lambda ₁ lambda
Select λ ₁ so that it falls within ₂ and set the thickness of each layer to λ
Are determined such that the quarter wavelength with respect to _1.

In the fourth embodiment, specifically, the refractive index n =
A layer 60 of 1.46 SiO ₂ and a refractive index n = 2.
The layer 61 made of TiO ₂ of No. 4 is alternately laminated to form the multi-layer transmission film 59 made of the multi-layer thin film of N layers. That is, the multilayer transmission film 59 is formed by stacking a SiO ₂ layer 60 of 967 Å and then a TiO ₂ layer 61 of 589 Å by a sputtering method or the like, and alternately laminating a total of 3 pairs.

In the edge emitting type light emitting diode of the fourth embodiment, the light emitting characteristic without the multilayer transmission film 59 is shown in FIG.
And as shown in FIG. 13, the light emission output decreases as the temperature rises as shown in FIG. In this edge emitting type light emitting diode, the bandgap energy difference between the active layer 54 and the cladding layers 53 and 55 is not so large, so that the temperature dependence becomes relatively large. Further, in the emission spectrum, the height of the emission peak decreases with increasing temperature, and at the same time, the entire emission spectrum shifts to the long wavelength side with increasing temperature.

FIG. 14 shows the calculation result of the transmittance with respect to the emission wavelength of the multilayer transmission film 59 under the above conditions in the fourth embodiment. The multilayer transmission film 59 has a higher transmittance on the long wavelength side than the peak wavelength λ _{0 of the} light emitted from the active layer 54. Further, the transmittance of the multilayer transmission film 59 with respect to the emission wavelength is set where the change in transmittance is large, that is, where the slope of the wavelength-transmittance characteristic curve is large.

As described above, the multilayer transmissive film 59 has a material, a film thickness, and a refractive index whose optical transmissivity has a minimum value on the shorter wavelength side than the peak wavelength of the optical output from the body of the edge-emitting light emitting diode. The maximum value of the transmittance is selected to be on the longer wavelength side than the central wavelength. That is, the multilayer transmission film 59 is
The film thickness is set to be a quarter for a wavelength slightly shorter than the emission peak wavelength.

FIG. 15 shows the temperature dependence of the emission intensity of the light emitted from the active layer 54 through the multilayer transmission film 59 in this embodiment. In this example, since the multilayer transmission film 59 is formed, the temperature dependence of the emission intensity is flat, and it can be seen that the influence of the temperature rise of the emission intensity is canceled. Further, if the multilayer transmissive film 59 is used under the condition that the slope of the wavelength-transmittance characteristic curve becomes larger, the temperature dependence of the emission intensity becomes even flatter.

The fourth embodiment is an embodiment of the invention described in claim 7, which is an active layer 5 as a light emitting layer having a characteristic that the centers of the emission intensity and the emission wavelength change depending on the temperature.
4 and a plurality of thin films 60, 6 having monolithically different refractive indexes on the light emitting portion for emitting light from the light emitting layer 54 to the outside.
In a semiconductor light emitting device having a multilayer transmission film 59 formed by sequentially stacking 1 and irradiating light to the outside through the multilayer transmission film 59, the multilayer transmission film 59 has a light emission intensity of light emitted from the light emitting layer 54. Has a high transmittance at a light emission wavelength when it is low, and has a low transmittance at a light emission wavelength when the light emission intensity of the light emitted from the light emitting layer 54 is high. Since the light emitting portion for radiating the light to the outside is the laminated end face and the multilayer transmissive film 59 is formed on the laminated end face, the problem that the lifetime of the device is short and the reliability is poor does not occur, and the emission intensity is reduced. A change due to temperature can be compensated for, a change in light emission intensity due to a change in temperature can be reduced, and an optical integrated device, an optical communication system, or the like that operates stably with respect to temperature distribution and ambient temperature fluctuations can be realized.

As described above, in the case where the conventional reflector having the wavelength dependence of the reflectance is provided on the side opposite to the light emitting surface,
Since the active layer absorbs the light reflected by the reflector, the edge-emitting type light emitting diode has a small effect of compensating for changes in the light intensity and the spectrum due to temperature. Multi-layer permeable film 59 on the end face
By forming the above, even in the edge emitting type light emitting diode, a high temperature characteristic improving effect can be obtained.

The fourth embodiment is an embodiment of the invention described in claim 8, in which the emission intensity is lowered by the rise of the operating temperature, and the central wavelength of the radiated light is lengthened by the rise of the operating temperature. An active layer 54 serving as a light emitting layer having a property of moving to the wavelength side, and a plurality of thin films 60 and 61 having different refractive indices are sequentially laminated in a light emitting portion for emitting light from the light emitting layer 54 to the outside. In the semiconductor light emitting element which has a multilayer transmission film 59 formed by irradiating light to the outside through the multilayer transmission film 59, the multilayer transmission film 59 includes a light emitting layer 54.
The light emitting portion having the light emission wavelength dependency of the light transmittance, which has a higher light transmittance on the longer wavelength side than the central wavelength of the light emitted from the light emitting layer 54, is the laminated end face. Since the multi-layered transparent film 54 is formed on the laminated end face, it is possible to compensate for the change in the emission intensity with temperature without causing the problem that the lifetime of the device is short and the reliability is poor, and the emission intensity with respect to the temperature change can be compensated. The change can be reduced, and an optical integrated device, an optical communication system, and the like that can operate stably with respect to temperature distribution and fluctuations in ambient temperature can be realized.

The fourth embodiment is an embodiment of the invention described in claim 9, in which the emission intensity is lowered by the rise of the operating temperature, and the central wavelength of the emitted light is lengthened by the rise of the operating temperature. An active layer 54 serving as a light emitting layer having a characteristic of moving to the wavelength side, and a plurality of thin films 60 and 61 having different refractive indexes in a monolithic manner are sequentially laminated on a light emitting portion for emitting light from the light emitting layer 54 to the outside. In the semiconductor light emitting element that has a multilayer transmission film 59 formed by irradiating light to the outside through the multilayer transmission film 59, the multilayer transmission film 59 is a minimum value in the emission wavelength dependence of the transmittance and has a wavelength λ ₁ Value Y _{1 at} which the transmittance is minimum with respect to the light of, and the transmittance is maximum with respect to light having a wavelength λ ₂ (λ ₂ > λ ₁ ) which is an extreme value adjacent to this minimum value Y _1. Between the value Y ₂ and the emission wavelength λ ₀ of the light emitting layer 54
Choose lambda ₁ so that λ ₁ <λ ₀ <λ ₂ contains configured so that the thickness of each layer is a quarter wavelength for the lambda _1, the light from the light-emitting layer 54 Since the light emitting portion that radiates to the outside is the laminated end face and the multilayer transmissive film 59 is formed on the laminated end face, the change in the emission intensity with temperature does not occur without the problem that the lifetime of the device is short and the reliability is poor. Can be compensated for, the change in emission intensity with respect to temperature change can be reduced, and an optical integrated device, an optical communication system, and the like that can operate stably with respect to temperature distribution and ambient temperature fluctuations can be realized.

The fifth embodiment of the present invention is defined in claims 7, 8, and 9.
It is another example of the described invention, which is an example of a semiconductor light emitting element including an edge emitting light emitting diode. The difference between the fifth embodiment and the fourth embodiment is the thickness of each layer of the multilayer transmission film 59. In the fifth embodiment, a layer 60 made of SiO ₂ having a refractive index n = 1.46 and TiO ₂ having a refractive index n = 2.4.
The layer 61 made of SiO ₂ is alternately laminated to form the multi-layer transmission film 59. In this multi-layer transmission film 59, a layer 60 made of SiO ₂ is first stacked by 925 Å by a sputtering method or the like.
Next, a layer 61 made of TiO ₂ is stacked by 563Å, and a total of 3 pairs are alternately stacked.

In the edge emitting type light emitting diode of the fifth embodiment, the light emitting characteristic without the multilayer transmission film 59 is the fourth.
This is the same as the light emission characteristics in the case where the multilayer transmission film 59 is not provided in the example. FIG. 16 shows the calculation result of the transmittance with respect to the emission wavelength of the multilayer transmission film 59 under the conditions described above in this example. The multilayer transmission film 59 has a higher transmittance on the long wavelength side than the peak wavelength of the light emitted from the active layer 54.
As described above, in the fifth embodiment, the material of the multilayer transmissive film 59 is such that the minimum value of the transmittance is on the shorter wavelength side than the emission wavelength and the maximum value of the transmittance is on the longer wavelength side than the emission wavelength. And the film thickness and refractive index are selected. That is, the film thickness of the multilayer transmission film 59 is set to be a quarter wavelength with respect to a wavelength slightly shorter than the emission wavelength.

The fifth embodiment differs from the fourth embodiment in that the transmittance of the multilayer transmission film 59 is set to be higher than that in the fourth embodiment. That is, the emission wavelength is close to the maximum value of the transmittance. Fifth
In the embodiment, the light output is high because the transmittance is generally higher than that in the fourth embodiment. However, in the fifth embodiment, the rate of change in the transmittance is smaller than that in the fourth embodiment, so that the effect of improving the temperature characteristics is small. The fifth embodiment as described above is mainly applied to a case where a high light output is required and a certain degree of temperature characteristic improving effect is sufficient. Thus, the thickness of each layer of the multi-layer transmission film 59 may be selected according to the application. In the fifth embodiment, the same effect as in the above-described fourth embodiment can be obtained.

FIG. 17 shows a sixth embodiment of the present invention. The sixth embodiment is an embodiment of the invention described in claims 10 and 11, and is an example of a semiconductor light emitting device including an edge emitting light emitting diode. The edge emitting light emitting diode, the buffer layer 63, n-type Al _{0. 45} made of n-type GaAs by MOCVD or the like on a substrate 62 made of n-type GaAs
The cladding layer 64 made of Ga _0.55 As and the light emitting layer A.
l _0.19 Ga _0.81 As active layer 65, p-type Al _0.45
A clad layer 66 made of Ga _0.55 As and a contact layer 67 made of p-type GaAs are sequentially laminated to form a double hetero structure.

The p-side electrode 6 is formed on the contact layer 67.
8 is formed, and the n-side electrode 69 is formed below the substrate 62. The main body of such an edge-emitting light emitting diode mainly emits light having a wavelength of 745 nm at room temperature from the light emitting end surface obtained by the cleavage method or the like. In the main body of this edge emitting type light emitting diode, a multilayer transmission film 70 is formed on a laminated end surface which is a light emitting end surface.
The material, the film thickness, and the refractive index are selected so that the transmittance increases when the temperature rises and the emission wavelength of the body of the edge-emitting light emitting diode shifts to the long wavelength side.

That is, in the sixth embodiment, as in the first embodiment, the multi-layer film 70 has a wavelength-transmittance characteristic curve wavy as shown in FIG. 2, and the transmittance is minimal at the wavelength λ _1. It becomes Y ₁ and the transmittance has a maximum value Y ₂ at a wavelength λ ₂ longer than the wavelength λ ₁ . In this case, the emission wavelength of the main body is between λ ₁ and λ _{2 in the} temperature range in which the edge emitting light emitting diode is actually used. Then, when the temperature rises and the central wavelength λ ₀ of the light output shifts to the long wavelength side, the transmittance of the multilayer transmission film 70 with respect to the light output increases, and the temperature dependence of the emission intensity is compensated. That is, in order to compensate the temperature dependence of the light emission intensity, the multilayer transmissive film 70 has λ ₀ of λ ₁ to λ _{2 with} respect to the body of the edge-emitting light emitting diode whose center wavelength of light output is λ ₀ . Λ ₁ is selected so as to be in between, and the thickness of each layer is determined to be a quarter wavelength with respect to λ ₁ .

In the sixth embodiment, specifically, the refractive index n =
A layer 71 of 1.46 SiO ₂ and a refractive index n = 2.
The layer 72 made of TiO ₂ and the layer 72 made of TiO ₂ are alternately laminated to form a multi-layered transparent film 70 made up of N multi-layered thin films. That is, the multi-layer transmission film 70 has a layer 71 made of SiO ₂ firstly stacked at 947 Å and then a layer 72 made of TiO ₂ stacked at 579 Å by a sputtering method or the like, and a total of 3 pairs of layers are alternately stacked.

Further, a multilayer reflective film 73 is formed on the laminated end surface of the body of the edge emitting light emitting diode opposite to the light emitting end surface, and the temperature of the multilayer reflective film 73 rises and the edge emitting light emitting diode is The material, the film thickness, and the refractive index are selected so that the reflectance increases when the emission wavelength of the main body of (1) shifts to the long wavelength side. Specifically, in the sixth embodiment, a layer 74 made of SiO ₂ having a refractive index n = 1.46.
And a layer 75 made of TiO ₂ having a refractive index n = 2.4 are alternately laminated to form a multilayer reflective film 73. That is, the multilayer reflective film 73 is first formed by the sputtering method or the like.
A layer 74 of iO ₂ is stacked 1536 Å, then a layer 75 of TiO ₂ is stacked 938 Å, and a total of 3 pairs are alternately laminated.

In the sixth embodiment, the light from the active layer 65 is radiated to the outside from the light emitting end face through the multi-layer transmission film 70, and is reflected by the multi-layer reflection film 73 to be reflected by the active layer 6.
The light is radiated to the outside from the light emitting end face through the multi-layered transparent film 5 and the multi-layered transparent film 70. Further, in the edge emitting light emitting diode of the sixth embodiment, the light emitting characteristics without the multilayer transmissive film 70 and the multilayer reflective film 73 are as shown in FIGS. 12 and 13 as in the fourth embodiment. Decreases as the temperature rises, as shown in FIG. In this edge-emitting light emitting diode, the bandgap energy difference between the active layer 65 and the cladding layers 64 and 66 is not so large, so that the temperature dependence becomes relatively large. Further, in the emission spectrum, the height of the emission peak decreases with increasing temperature, and at the same time, the entire emission spectrum shifts to the long wavelength side with increasing temperature.

The calculation result of the transmittance with respect to the emission wavelength of the multilayer transmission film 70 under the above conditions in the sixth embodiment is shown in FIG. The multilayer transmission film 70 has a higher transmittance on the long wavelength side than the peak wavelength of the light emitted from the active layer 65. In this way, the multilayer transmission film 70 has a semiconductor material, a film thickness, and a refractive index that have a minimum value of the transmittance on the shorter wavelength side than the peak wavelength of the light output from the body of the edge-emitting light emitting diode, and thus the peak of the light output. The maximum value of the transmittance is selected to be on the longer wavelength side than the wavelength. That is, the multilayer transmission film 70 has a thickness that is a quarter of the wavelength that is slightly shorter than the emission peak wavelength.

FIG. 18 shows the calculation results of the reflectance with respect to the emission wavelength of the multilayer reflective film 73 under the above conditions in this embodiment.
Shown in The multilayer reflective film 73 has a high reflectance on the longer wavelength side than the peak wavelength of the light emitted from the active layer 65. In this way, the multilayer reflective film 73 has a semiconductor material, a film thickness, and a refractive index whose peaks of light output reach a minimum value of the reflectance on the shorter wavelength side than the peak wavelength of light output from the body of the edge-emitting light emitting diode. The maximum value of the reflectance is selected to be on the longer wavelength side than the wavelength. That is, the multilayer reflective film 73
Is such that the film thickness is ¼ for a wavelength that is slightly shorter than the emission peak wavelength.

FIG. 19 shows the temperature dependence of the emission intensity of the sixth embodiment having the multilayer transmission film 70 and the multilayer reflection film 73. In the sixth embodiment, since the multi-layer reflective film 73 is formed, the temperature characteristics are further flattened as compared with the fifth embodiment due to the synergistic effect of the multi-layer transmissive film 70 and the multi-layer reflective film 73. You can see that it has been canceled. Further, if the multilayer transmissive film 70 and the multilayer reflective film 73 that satisfy the condition that the inclinations of the transmittance and the reflectance with respect to the wavelength are further increased, the temperature characteristics are further flattened.

As described above, in the case of using the conventional reflector having the wavelength dependence of the reflectance on the side opposite to the light emitting surface,
Since the active layer absorbs the light reflected by the reflector, the edge-emitting light-emitting diode has a small effect of compensating for changes in the light intensity and the spectrum due to temperature. By forming the transmissive film 70 and the multilayer reflective film 73, a high temperature characteristic improving effect can be obtained even in the edge-emitting light emitting diode. of course,
It is possible to obtain the same effect by forming the multilayer transmissive film and the multilayer reflective film not only on the edge emitting type light emitting diode but also on the surface emitting type light emitting diode.

The sixth embodiment is an embodiment of the invention according to claim 10, wherein in the semiconductor light emitting device according to claim 7, the light is refracted on the laminated end face opposite to the laminated end face to be the light emitting portion. A multilayer reflective film 73 is formed by sequentially laminating a plurality of thin films 74 and 75 having different ratios, and the multilayer reflective film 73 has a high emission wavelength when the emission intensity of light emitted from the light emitting layer 65 is low. Since the transmittance is such that the transmittance of the light emitted from the light-emitting layer 65 becomes low at the emission wavelength when the emission intensity of the light is high, the transmittance of the multilayer reflective film 73 can be used. As a result, the change in the emission intensity with respect to the temperature change is smaller than that in the fourth embodiment.

The sixth embodiment is an embodiment of the invention according to claim 11, wherein in the semiconductor light emitting device according to claims 8 and 9, the laminated end face opposite to the laminated end face to be the light emitting portion. A multilayer reflective film 73 is formed by sequentially laminating a plurality of thin films 74 and 75 having different refractive indexes, and the multilayer reflective film 73 is provided.
Has a light emission wavelength dependency of the reflectance that is higher on the long wavelength side than the central wavelength of the light emitted from the light emitting layer 65, and therefore the light reflected by the multilayer reflective film 73 can be used. The change in the emission intensity with respect to the change in temperature is smaller than that in Example 4.

FIG. 20 shows a seventh embodiment of the present invention. The seventh embodiment is an embodiment of the invention according to claim 12,
It is an example of a semiconductor light emitting element including an edge emitting light emitting diode. This edge emitting light emitting diode is an n-type GaA
On the substrate 76 made of s, a buffer layer 77 made of n-type GaAs and n-type Al _0.45 Ga are formed by MOCVD or the like.
_The cladding layer 78 made of _0.55 As, the light emitting layer of Al
Active layer 79 made of _0.19 Ga _0.81 As, p-type Al _0.45 G
A clad layer 80 made of a _0.55 As and a contact layer 81 made of p-type GaAs are sequentially laminated to form a double hetero structure. Such an epi-wafer is formed into a projecting edge emitting light emitting diode wafer by a dry etching method using a resist or the like as an etching mask and chlorine gas or the like as an etching gas.

The edge emitting type light emitting diode wafer has a laminated end face serving as a light emitting end face formed by a dry etching method or the like to form a body of the edge emitting type light emitting diode, and this body emits light having a wavelength of 745 nm from the light emitting end face at room temperature. can get. The body of the edge emitting type light emitting diode has a multilayer film 8 on the light emitting end surface and the laminated end surface on the opposite side.
2 and 83 are formed, and the multilayer film 82 and 83 are made of a material, a film thickness and a material thereof so that the transmittance increases when the temperature rises and the emission wavelength of the body of the edge emitting light emitting diode shifts to the long wavelength side. The refractive index is chosen. The multilayer film 82 becomes a multilayer transmission film, and the multilayer film 83 becomes a part of the multilayer reflection film,
The light from the active layer 79 is emitted to the outside from the light emitting end face through the multilayer transmission film 82, is reflected by the multilayer reflection film, and is emitted to the outside from the light emitting end face through the active layer 79 and the multilayer transmission film 82.

[0104] That is, in the seventh embodiment, like the first embodiment, the multilayer film 82, 83 is wavy wavelength versus transmittance characteristic curve as shown in FIG. 2, the transmittance at a wavelength lambda ₁ The minimum value Y ₁ is obtained, and the transmittance takes the maximum value Y ₂ at the wavelength λ ₂ longer than the wavelength λ ₁ . In this case, the emission wavelength of the main body is between λ ₁ and λ _{2 in the} temperature range in which the edge emitting light emitting diode is actually used. Then, when the temperature rises and the central wavelength λ ₀ of the light output shifts to the long wavelength side, the transmittance of the multilayer films 82 and 83 with respect to the light output increases, and the temperature dependence of the emission intensity is compensated. . That is, the multilayer film 8
Nos. 2,83 are for compensating the temperature dependence of the emission intensity,
For the body of an edge-emitting LED whose center wavelength of light output is λ ₀ , choose λ ₁ such that λ ₀ falls between λ ₁ and λ ₂ and set the thickness of each layer to that λ _1. It is decided to be a quarter wavelength.

In the seventh embodiment, specifically, the refractive index n =
A layer 84 of 1.46 SiO ₂ and a refractive index n = 2.
4 and a layer 85 made of TiO ₂ are alternately laminated to form multilayer films 82 and 83 made of N multi-layer thin films. That is, the multilayer films 82 and 83 are formed by stacking 947 Å of a layer 84 made of SiO ₂ first on the protruding edge-emitting LED wafer by plasma CVD or the like, and then by Ti.
A layer 85 made of O _{2 is} stacked by 578 Å (thickness on each end face of the stack), and a total of 3 pairs are alternately stacked.
In this case, the multilayer films 82 and 83 are also stacked on the flat surface portion other than the stacked end surface of the edge emitting light emitting diode wafer.

Then, a contact hole 86 is opened in a part of the multilayer film on the contact layer 81 to form a p-side electrode 87 therein, and the multilayer film 82 on the light emitting end face serves as a multilayer transmissive film and emits light. The multilayer film 83 on the laminated end surface opposite to the end surface becomes a part of the multilayer reflective film. Al on the multilayer film 83
A film (metal film) 89 is formed, and the multilayer film 83 and A are formed.
A multilayer reflective film is formed by the l film 89. Further, an n-side electrode 88 is formed below the substrate 76. Of course, the metal film 89 does not have to be an Al film.
The p-side electrode 87 may be formed as a separate electrode when ohmic contact with the contact layer 81 cannot be obtained.

In the edge emitting type light emitting diode of the seventh embodiment, the light emitting characteristics without the multilayer transmissive film 82 and the multilayer reflective film 83 are as shown in FIGS. 12 and 13 as in the fourth embodiment. The light emission output decreases as the temperature rises, as shown in FIG. In this edge emitting type light emitting diode, the bandgap energy difference between the active layer 79 and the cladding layers 78 and 80 is not so large, so that the temperature dependence becomes relatively large. Further, in the emission spectrum, the height of the emission peak decreases with increasing temperature, and at the same time, the entire emission spectrum shifts to the long wavelength side with increasing temperature.

The calculation result of the transmittance with respect to the emission wavelength of the multilayer transmission film 82 under the above conditions in the seventh embodiment is shown in FIG. The multilayer transmission film 82 has a higher transmittance on the long wavelength side than the peak wavelength λ _{0 of the} light emitted from the active layer 79. In this way, the multilayer transmission film 82 has a material, a film thickness, and a refractive index that are smaller than the peak wavelength of the light output from the body of the edge-emitting light-emitting diode and have a minimum value of the transmittance on the shorter wavelength side than the center wavelength of the light output. Is selected such that the maximum value of the transmittance is on the long wavelength side. That is, the multilayer transmission film 82 is
The film thickness is set to be a quarter for a wavelength slightly shorter than the emission peak wavelength.

Further, the reflectance of the multilayer reflective film 83 under the above conditions in the present embodiment with respect to the emission wavelength increases as the transmittance of the dielectric multilayer film forming the multilayer reflective film 83 increases, so that the multilayer reflective film 83 is activated. It has a high reflectance on the longer wavelength side than the peak wavelength of the light emitted from the layer 79. As described above, the temperature dependence of the emission intensity of the seventh embodiment having the multilayer transmission film 82 and the multilayer reflection film 83 becomes flat as compared with the fourth embodiment due to the same operation as that of the sixth embodiment.

As described above, in the case of using the conventional reflector having the wavelength dependence of the reflectance on the side opposite to the light emitting surface,
Since the active layer absorbs the light reflected by the reflector, the edge emitting light emitting diode has a small effect of compensating for the change of the light intensity and the spectrum due to the temperature. By forming the transmissive film 82 and the multilayer reflective film 83, a high temperature characteristic improving effect can be obtained even in an edge-emitting light emitting diode. Furthermore, the multilayer reflective film 83 is a multilayer film 84, 8 similar to the multilayer transmissive film 82.
Since the metal film 89 is laminated on the metal film 5, it is possible to form other than the metal film 89 at the same time. In addition, the multilayer transmission film 8
It is possible to form the metal film 89 (a part of the multilayer reflection film 83) on the same multilayer films 84 and 85 as the p-side electrode 87 at the same time. Therefore, it is possible to easily manufacture a semiconductor light emitting element in which the change in emission intensity is small with respect to the change in temperature.

As described above, the seventh embodiment is an embodiment of the invention according to claim 12, and in the semiconductor light emitting device according to claim 7, 8 or 9, the side opposite to the laminated end face as the light emitting portion. On the laminated end face of the multilayer film 8 similar to the multilayer transmission film 82.
Multilayer reflective film 83 formed by laminating a metal film 89 on 4,85
Therefore, the light reflected by the multilayer reflective film 83 can be used, and the change in emission intensity with respect to the temperature change is reduced. Further, except for the metal film 89, the multilayer transmissive film 82 and the multilayer reflective film 83 can be simultaneously formed.

FIG. 21 shows an eighth embodiment of the present invention. The eighth embodiment is an embodiment of the invention according to claim 13,
It is an example of a semiconductor light emitting element array chip including a semiconductor light emitting diode array chip. This eighth embodiment has 64
A semiconductor light-emitting diode array chips 92 arranged monolithically semiconductor light emitting element 91 _{1-91 64} made of a semiconductor light emitting diode of the bits in a row, the semiconductor light-emitting diode 91 _{1-91 6 4} the first embodiment to seventh Similar to any of the examples. Further, the eighth embodiment, the individual electrodes of the semiconductor light-emitting diode 91 _{1-91 64} 9
3 _{1-93 64} is connected to the wire bonding pads 95 _{1-95 64} by metal wires 94 ₁ to 94 _64, respectively.

As described above, the eighth embodiment is an embodiment of the invention described in claim 13 and has a semiconductor light emitting diode 91 which emits little light with respect to the temperature change according to any one of claims 1 to 12. _{Since 1 to} 91 ₆₄ are monolithically arranged, the semiconductor light emitting diodes 91 _{1 to} 91 ₆₄ are less affected by heat generated by the operation of other elements. That is, even if a temperature distribution occurs in the chip 92, the distribution of the light emission output in the chip 92 can be made small, and the semiconductor light emitting diode array chip 92 having a uniform light emission intensity and a small light emission intensity distribution with respect to the temperature change. Can be obtained. This semiconductor light emitting diode array chip 9
As a second application example, if the semiconductor light emitting diode array chips 92 are arranged in an array to form a printer head, a printer capable of printing with uniform print quality and recording density can be realized.

AlGa of the first to eighth embodiments
The As-based semiconductor light emitting element is merely an example of a device having temperature dependence of emission intensity and emission spectrum such that the light output decreases at high temperature and the emission wavelength shifts to the long wavelength side when there is no multilayer transmission film, The present invention can be applied to any device having temperature dependence in emission intensity and emission spectrum regardless of temperature dependence. Further, the present invention can be similarly applied to devices of other structures and devices of other materials.

Further, regarding the multilayer transmission film of the present invention, in the device in which the emission wavelength shifts to the long wavelength side and the emission intensity decreases when the temperature rises as in the above-mentioned embodiment, the transmittance on the long wavelength side is high. Should be designed to rise. Further, the multilayer transmission film of the above embodiment is an example in which two kinds of materials having different thickness and refractive index are repeatedly formed as a pair. You may stack different objects. That is, two or more kinds of materials having different refractive indexes that are transparent to the emission wavelength of the device may be selected, and their thicknesses may be appropriately selected to be laminated as a multilayer transmission film on the light emitting surface of the semiconductor light emitting element. . If the temperature dependence of the emission intensity of the device is large, the material and its thickness are selected under the condition that the slope of the wavelength-transmittance characteristic curve becomes large, and the material is laminated as a multilayer transmission film on the light emitting surface of the semiconductor light emitting device. Good.

[0116]

As described above, according to the first aspect of the present invention, the light emitting layer having the characteristic that the center of the light emitting intensity and the center of the light emitting wavelength change depending on the temperature, and the light from the light emitting layer to the outside. A semiconductor light emitting device having a multi-layer transmissive film formed by sequentially laminating a plurality of thin films having different refractive indexes in a monolithically radiating light emitting part, and irradiating light to the outside through the multi-layer transmissive film. Is a transmittance having a high transmittance at an emission wavelength when the emission intensity of the light emitted from the light emitting layer is low, and a low transmittance at an emission wavelength when the emission intensity of the light emitted from the light emitting layer is high. Since it is a semiconductor film having the emission wavelength dependency of, it is possible to compensate the change in emission intensity with temperature without causing the problem of short lifetime of the device and poor reliability, and to change the emission intensity with respect to temperature change. But No. Further, since the multi-layer transmissive film is a semiconductor film, electrodes can be formed on the multi-layer transmissive film, so that there are few restrictions on the formation position of the multi-layer transmissive film and the surface-emitting type and the end face can be used regardless of the device material and structure. It can be applied to various devices regardless of light emitting type.

According to the second aspect of the present invention, the light emitting layer has such characteristics that the emission intensity is lowered by the increase of the operating temperature and the central wavelength of the emitted light is moved to the long wavelength side by the increase of the operating temperature. , A multilayer transmission film formed by sequentially laminating a plurality of thin films having different refractive indexes in a light emitting portion for emitting light from the light emitting layer to the outside, and irradiating light to the outside through the multilayer transmission film. In the semiconductor light emitting device, the multilayer transmission film is a semiconductor film having a light emission wavelength dependence of the transmittance which is higher on the long wavelength side than the central wavelength of the light emitted from the light emitting layer. It is possible to compensate for the decrease in the emission intensity due to the temperature rise without causing the problem that the lifetime of the device is short and the reliability is poor. Furthermore, since the multilayer transparent film is a semiconductor film,
Since the electrodes can be formed on the multi-layer transmissive film, there are few restrictions on the formation position of the multi-layer transmissive film, and it can be applied to various devices regardless of the surface emitting type and the edge emitting type regardless of the material and structure of the device.

According to the third aspect of the invention, the light emitting layer has a characteristic that the emission intensity is lowered by the rise of the operating temperature, and the central wavelength of the emitted light is shifted to the long wavelength side by the rise of the operating temperature. , A multilayer transmission film formed by sequentially laminating a plurality of thin films having different refractive indexes in a light emitting portion for emitting light from the light emitting layer to the outside, and irradiating light to the outside through the multilayer transmission film. in the semiconductor light-emitting element, the multilayer permeable membrane, a value Y ₁ of the transmittance is minimum with respect to the minimum value in a by wavelength lambda ₁ of the light at the emission wavelength dependence of the transmittance, this minimum value Y ₁ A value Y ₂ which is an adjacent extremum and has a maximum transmittance for light of wavelength λ ₂ (λ ₂ > λ ₁ ).
And the emission wavelength λ ₀ of the light emitting layer is included between λ ₁ <λ ₀ <
Since λ ₁ is selected so as to be λ ₂ and the thickness of each layer is a quarter wavelength with respect to λ ₁ , the semiconductor film has a problem that the lifetime of the device is short and reliability is poor. It is possible to compensate for the decrease in the emission intensity due to the temperature rise without the occurrence of the occurrence. Further, since the multi-layer transmissive film is a semiconductor film, electrodes can be formed on the multi-layer transmissive film, so that there are few restrictions on the formation position of the multi-layer transmissive film and the surface-emitting type and the end face can be used regardless of the device material and structure. It can be applied to various devices regardless of light emitting type.

According to the invention described in claim 4,
In the semiconductor light emitting device according to 2 or 3, the light emitting layer and the multi-layered transmissive film are laminated on the substrate so that the multi-layered transmissive film is on the side opposite to the substrate with respect to the light emitting layer. It is possible to compensate for the decrease in strength.

According to the invention of claim 5, claim 1,
In the semiconductor light emitting device according to 2 or 3, since the light emitting layer and the multilayer transmission film are laminated on the substrate so that the multilayer transmission film is on the same side as the substrate with respect to the light emission layer, light emission due to temperature rise It is possible to compensate for the decrease in strength.

According to the invention of claim 6, claim 1,
In the semiconductor light emitting device described in 2, 3, 4 or 5, since each semiconductor film forming the multilayer transmissive film is formed by an atomic layer growth method of growing one atomic layer at a time, the yield is good and the multilayer transmissive film is obtained. Can be formed with good film thickness controllability, and the change in emission intensity with respect to the temperature change can be reduced.

According to the invention described in claim 7, in the light emitting layer having the characteristic that the center of the light emission intensity and the center of the light emission wavelength changes depending on the temperature, and the light emitting portion for emitting the light from the light emitting layer to the outside. In a semiconductor light emitting device having a multilayer transmissive film formed by sequentially laminating a plurality of thin films having different refractive indexes monolithically, and irradiating light to the outside through the multilayer transmissive film, the multilayer transmissive film is formed from the light emitting layer. The emission wavelength dependence of the transmittance is high at the emission wavelength when the emission intensity of the emitted light is low and low at the emission wavelength when the emission intensity of the light emitted from the emission layer is high. Since the light emitting portion that emits the light from the light emitting layer to the outside is the laminated end face and the multilayer transmissive film is formed on the laminated end face, the problem that the device life is short and the reliability is poor occurs. Without emitting light Can compensate for changes due to temperature, change in emission intensity is reduced. Furthermore, since the multi-layer transmissive film is a semiconductor film, electrodes can be formed on the multi-layer transmissive film, so there are few restrictions on the formation position of the multi-layer transmissive film and it can be applied to various devices regardless of the material and structure of the device. it can.

According to the eighth aspect of the present invention, the light emitting layer has a characteristic that the emission intensity is lowered by the rise of the operating temperature, and the center wavelength of the emitted light is shifted to the long wavelength side by the rise of the operating temperature. , A multilayer transmission film formed by sequentially laminating a plurality of thin films having different refractive indexes in a light emitting portion for emitting light from the light emitting layer to the outside, and irradiating light to the outside through the multilayer transmission film. In the semiconductor light emitting device, the multilayer transmission film has an emission wavelength dependency of the transmittance that is higher on the long wavelength side than the central wavelength of the light emitted from the light emitting layer, Since the light emitting portion that radiates light to the outside is the laminated end face and the multilayer transmission film is formed on the laminated end face, the light emission due to the temperature rise does not occur without the problem that the device life is short and the reliability is poor. Loss of strength It can be compensated. Furthermore, since the multi-layer transmissive film is a semiconductor film, electrodes can be formed on the multi-layer transmissive film, so there are few restrictions on the formation position of the multi-layer transmissive film and it can be applied to various devices regardless of the material and structure of the device. it can.

According to the ninth aspect of the present invention, the light emitting layer has such characteristics that the emission intensity is lowered by the increase of the operating temperature and the central wavelength of the emitted light is shifted to the long wavelength side by the increase of the operating temperature. , A multi-layered transmissive film in which a plurality of thin films having different refractive indexes are sequentially laminated in a monolithic manner at a light emission part for emitting light from the light emitting layer to the outside, and the light is radiated to the outside through the multi-layered transmissive film. in the semiconductor light-emitting element, the multilayer permeable membrane, a value Y ₁ of the transmittance is minimum with respect to the minimum value in a by wavelength lambda ₁ of the light at the emission wavelength dependence of the transmittance, this minimum value Y ₁ A value Y ₂ which is an adjacent extremum and has a maximum transmittance for light of wavelength λ ₂ (λ ₂ > λ ₁ ).
And the emission wavelength λ ₀ of the light emitting layer is included between λ ₁ <λ ₀ <
λ ₁ is selected to be λ ₂ and the thickness of each layer is configured to be a quarter wavelength with respect to λ ₁ , and the light emitting portion for emitting light from the light emitting layer to the outside is a laminated end face. Since the multi-layered transparent film is formed on the laminated end face, the problem that the life of the device is short and the reliability is poor does not occur.
It is possible to compensate for the decrease in emission intensity due to the temperature rise. Furthermore, since the multi-layer transmissive film is a semiconductor film, electrodes can be formed on the multi-layer transmissive film, so there are few restrictions on the formation position of the multi-layer transmissive film and it can be applied to various devices regardless of the material and structure of the device. it can.

According to the invention of claim 10, claim 7 is provided.
In the semiconductor light-emitting element described, a multilayer reflection film having a plurality of thin films having different refractive indexes sequentially laminated on the lamination end face opposite to the lamination end face to be the light emitting portion, and the multilayer reflection film, Light emission with high reflectance at the emission wavelength when the emission intensity of the light emitted from the light emitting layer is low, and low reflectance at the emission wavelength when the emission intensity of the light emitted from the light emitting layer is high Since it has wavelength dependence, it is possible to utilize the light reflected by the multilayer reflective film, and the change in the emission intensity with respect to the temperature change is reduced.

According to the eleventh aspect of the present invention, in the semiconductor light emitting element according to the eighth and ninth aspects, a plurality of thin films having different refractive indexes are sequentially formed on the laminated end face opposite to the laminated end face which is the light emitting portion. Since the multilayer reflective film has a multi-layered reflective film laminated on each other, and the multi-layered reflective film has the emission wavelength dependence of the reflectance that is higher on the long wavelength side than the central wavelength of the light emitted from the light emitting layer. The light reflected by the multilayer reflective film can be used, and the change in the emission intensity with respect to the temperature change is reduced.

According to the twelfth aspect of the present invention, in the semiconductor light-emitting device according to the seventh, eighth or ninth aspect, the same multilayer multilayer film is formed on the laminated end face opposite to the laminated end face which becomes the light emitting portion. Since the multilayer reflective film is formed by laminating the metal film on the multilayer film, the reflected light from the multilayer reflective film can be used, and the change in the emission intensity with respect to the temperature change is reduced. Further, it is possible to simultaneously form the multi-layer transmissive film and the multi-layer reflective film except for the metal film.

According to the thirteenth aspect of the present invention, the semiconductor light emitting elements according to the first, second, third, fourth, fifth, sixth, seventh, eighth, ninth, tenth, eleventh or twelfth aspect are arranged monolithically. Each semiconductor light emitting element is less affected by heat generated by the operation of other elements, and the distribution of optical output in the chip is small even if the temperature distribution occurs in the chip.

[Brief description of drawings]

FIG. 1 is a sectional view showing a first embodiment of the present invention.

FIG. 2 is a conceptual diagram when the transmittance of a multilayer film is obtained.

FIG. 3 is a characteristic curve diagram showing light output characteristics with respect to temperature when there is no multilayer transmission film in the first embodiment.

FIG. 4 is a characteristic curve diagram showing a temperature vs. peak wavelength characteristic in the case where the multilayer transmission film is not provided in the first embodiment.

FIG. 5 is a diagram showing a calculation result of transmittance with respect to an emission wavelength of the multilayer transmission film in the first example.

FIG. 6 is a diagram showing a calculation result of transmittance with respect to an emission wavelength in an example in which the film thickness of a multilayer transmission film is an optimum value and an optimum value ± 10%.

FIG. 7 is a characteristic curve diagram showing the temperature dependence of the emission intensity of light emitted from the active layer through the multilayer transmission film in the first example.

FIG. 8 is a diagram showing a calculation result of transmittance with respect to an emission wavelength of the multilayer transmission film in the second example of the present invention.

FIG. 9 is a sectional view showing a third embodiment of the present invention.

FIG. 10 is a cross-sectional view showing a conventional semiconductor light emitting device.

FIG. 11 is a sectional view showing a fourth embodiment of the present invention.

FIG. 12 is a characteristic curve diagram showing temperature vs. light output characteristics in the case where the edge emitting type light emitting diode of the fourth embodiment does not have a multilayer transmission film.

FIG. 13 is a characteristic curve diagram showing a temperature vs. peak wavelength characteristic in the case where the edge emitting light emitting diode of the fourth embodiment has no multilayer transmission film.

FIG. 14 is a diagram showing a calculation result of transmittance with respect to an emission wavelength of the multilayer transmission film in the fourth example.

FIG. 15 is a characteristic curve diagram showing the temperature dependence of the emission intensity of light emitted from the active layer through the multilayer transmission film in the fourth example.

FIG. 16 is a diagram showing a calculation result of the transmittance with respect to the emission wavelength of the multilayer transmission film in the fifth example of the present invention.

FIG. 17 is a sectional view showing a sixth embodiment of the present invention.

FIG. 18 is a diagram showing a calculation result of reflectance with respect to an emission wavelength of the multilayer reflective film in the sixth example.

FIG. 19 is a characteristic curve diagram showing the temperature dependence of emission intensity in the sixth example.

FIG. 20 is a sectional view showing a seventh embodiment of the present invention.

FIG. 21 is a sectional view showing an eighth embodiment of the present invention.

[Explanation of symbols]

21, 32 Substrate 23, 25, 37, 39, 53, 55, 64, 66, 7
8,80 Clad layer 24,38,54,65,79 Active layer 27,36,59,70,82 Multilayer transmissive film 73,83 Multilayer reflective film 911 _{1 to} 91 ₆₄ Semiconductor light emitting device

Claims (13)

[Claims] 1. A light emitting layer having characteristics that the center of light emission intensity and the center of light emission wavelength change depending on temperature, and a plurality of monolithically different refractive indexes at a light emitting portion for emitting light from the light emitting layer to the outside. In a semiconductor light emitting device having a multilayer transmission film formed by sequentially stacking thin films, and irradiating light to the outside through the multilayer transmission film, the multilayer transmission film has a light emission intensity of light emitted from the light emitting layer. A semiconductor film having a high transmittance at a low emission wavelength and a low transmittance at a high emission wavelength of the light emitted from the light-emitting layer. Semiconductor light emitting device. 2. A light emitting layer having a characteristic that the emission intensity decreases with an increase in operating temperature and the center wavelength of emitted light shifts to a long wavelength side with an increase in operating temperature, and a light from the light emitting layer. A semiconductor light emitting device having a multi-layered transmissive film formed by sequentially laminating a plurality of thin films having different refractive indexes in a monolithically radiating portion for radiating to the outside, and irradiating light to the outside through the multi-layered transmissive film. The semiconductor light emitting device, wherein the transmissive film is a semiconductor film having an emission wavelength dependency of the transmissivity, which has a higher transmissivity on a long wavelength side than a central wavelength of light emitted from the light emitting layer. 3. A light emitting layer having a characteristic that the emission intensity decreases with an increase in operating temperature, and the center wavelength of emitted light moves to a long wavelength side with an increase in operating temperature, and a light from the light emitting layer. A semiconductor light emitting device having a multi-layered transmissive film formed by sequentially laminating a plurality of thin films having different refractive indexes in a monolithically radiating portion for radiating to the outside, and irradiating light to the outside through the multi-layered transmissive film. permeable membrane, a value Y ₁ of the transmittance is minimum with respect to the minimum value in a by wavelength lambda ₁ of the light at the emission wavelength dependence of the transmittance, the minimum value Y ₁
And adjacent an extremum wavelength _{λ 2 (λ 2> λ 1} ) the light emitting layer emitting wavelength lambda ₀ is entered in lambda ₁ between the value Y ₂ in which the transmittance is maximum with respect to light of < A semiconductor light emitting device characterized by being a semiconductor film in which λ ₁ is selected so that λ ₀ <λ ₂ and the thickness of each layer is a quarter wavelength with respect to λ ₁ . 4. The semiconductor light emitting device according to claim 1, 2 or 3, wherein the light emitting layer and the multilayer transmission film are provided on the substrate so that the multilayer transmission film is on a side opposite to the substrate with respect to the light emission layer. A semiconductor light emitting device characterized by being laminated on. 5. The semiconductor light emitting device according to claim 1, 2 or 3, wherein the light emitting layer and the multilayer transmission film are provided on the substrate so that the multilayer transmission film is on the same side as the substrate with respect to the light emission layer. A semiconductor light emitting device characterized by being laminated on. 6. The semiconductor light emitting device according to claim 1, 2, 3, 4 or 5, wherein each of the semiconductor films constituting the multilayer transmissive film is formed by an atomic layer growth method of growing one atomic layer at a time. A semiconductor light emitting device characterized by the above. 7. A light emitting layer having characteristics that the center of the light emission intensity and the center of the light emission wavelength change depending on temperature, and a plurality of light emitting portions for emitting light from the light emitting layer to the outside, having a plurality of monolithically different refractive indexes. In a semiconductor light emitting device having a multilayer transmission film formed by sequentially laminating thin films, and irradiating light to the outside through the multilayer transmission film, the multilayer transmission film has a light emission intensity of light emitted from the light emitting layer. It has a high transmittance at a low emission wavelength and a low transmittance at a high emission wavelength when the emission intensity of the light emitted from the light emitting layer has an emission wavelength dependency of the transmittance. A semiconductor light emitting device characterized in that a light emitting portion for emitting light to the outside is a laminated end face, and the multilayer transmission film is formed on the laminated end face. 8. A light emitting layer having a characteristic that the emission intensity decreases with an increase in operating temperature and the center wavelength of emitted light shifts to a long wavelength side with an increase in operating temperature, and a light from the light emitting layer. A semiconductor light emitting device having a multi-layered transmissive film formed by sequentially laminating a plurality of thin films having different refractive indexes in a monolithically radiating portion for radiating to the outside, and irradiating light to the outside through the multi-layered transmissive film. The transmissive film has a light emission wavelength dependency of the light transmittance of the light emitted from the light emitting layer at a wavelength longer than the central wavelength of the light emitted from the light emitting layer, and emits light from the light emitting layer to the outside. A semiconductor light emitting device, wherein a part is a laminated end face, and the multilayer transmission film is formed on the laminated end face. 9. A light emitting layer having a characteristic that the emission intensity decreases with an increase in operating temperature and the center wavelength of emitted light moves to a long wavelength side with an increase in operating temperature, and light from the light emitting layer. A semiconductor light emitting device having a multi-layer transmissive film formed by sequentially laminating a plurality of thin films having different refractive indexes in a monolithic manner at a light emitting portion for radiating to the outside, and irradiating light to the outside through the multi-layer transmissive film. permeable membrane, a value Y ₁ of the transmittance is minimum with respect to the minimum value in a by wavelength lambda ₁ of the light at the emission wavelength dependence of the transmittance, the minimum value Y ₁
And an emission wavelength λ ₀ of the light emitting layer is between the adjacent extreme value Y _{2 at} which the transmittance is maximum for light of wavelength λ ₂ (λ ₂ > λ ₁ ), and λ ₁ < λ ₁ is selected so that λ ₀ <λ _2, and the thickness of each layer is configured to be a quarter wavelength with respect to λ ₁ , and a light emitting portion for emitting light from the light emitting layer to the outside. Is a laminated end face, and the multilayer transmission film is formed on the laminated end face. 10. The semiconductor light emitting device according to claim 7, further comprising a multilayer reflective film formed by sequentially laminating a plurality of thin films having different refractive indexes on a laminated end face opposite to a laminated end face which is a light emitting portion. The multilayer reflection film has a high reflectance at the emission wavelength when the emission intensity of the light emitted from the light emitting layer is low, and has a low reflectance at the emission wavelength when the emission intensity of the light emitted from the light emitting layer is high. A semiconductor light-emitting device having a reflectance having an emission wavelength dependency. 11. The semiconductor light emitting device according to claim 8, wherein a multilayer reflective film is formed by sequentially laminating a plurality of thin films having different refractive indexes on a laminated end face opposite to a laminated end face which is a light emitting portion. The semiconductor light-emitting device according to claim 1, wherein the multilayer reflective film has an emission wavelength dependency of a reflectance that is higher on a long wavelength side than a central wavelength of light emitted from the light emitting layer. 12. The semiconductor light emitting device according to claim 7, 8 or 9, wherein a metal film is laminated on a multilayer film similar to the multilayer transmissive film on the laminated end face opposite to the laminated end face to be a light emitting portion. A semiconductor light emitting device having a multi-layered reflective film as described above. 13. Claims 1, 2, 3, 4, 5, 6, 7,
A semiconductor light emitting device array chip, wherein the semiconductor light emitting devices according to 8, 9, 10, 11 or 12 are arranged monolithically.