JP2005064460A5 - - Google Patents

Claims (17)

In a plasma processing apparatus comprising: an electrostatic chuck for mounting a target object to be subjected to plasma processing; and a target object mounting device having a focus ring that contacts the electrostatic chuck at a contact portion;
The said focus ring has a dielectric material part which forms the said contact part, and a conductor part which opposes the said electrostatic chuck through this dielectric material part, The plasma processing apparatus characterized by the above-mentioned. The plasma processing apparatus according to claim 1, wherein a thickness of the dielectric portion is constant with respect to a radial direction of the focus ring. 2. The dielectric portion is made of an oxide of a material forming the conductor portion.
Or the plasma processing apparatus of 2. The plasma processing apparatus according to claim 1, wherein the material forming the conductor portion is silicon. The plasma processing apparatus according to any one of claims 1 to 4, wherein a material forming the dielectric portion is silicon dioxide. In the focus ring that comes into contact with the electrostatic chuck on which the object to be processed is placed at the contact portion,
A focus ring comprising: a dielectric portion that forms the contact portion; and a conductor portion that faces the electrostatic chuck via the dielectric portion. In an apparatus for mounting an object to be processed, comprising: an electrostatic chuck for mounting an object to be processed that is subjected to plasma treatment; and a focus ring that contacts the electrostatic chuck at a contact portion;
The focus ring includes a dielectric part that forms the contact part, and a conductor part that faces the electrostatic chuck via the dielectric part. An apparatus for mounting an object to be processed includes: an electrostatic chuck for mounting an object to be plasma-treated; and a focus ring in contact with the electrostatic chuck on a contact surface around the object to be processed. In plasma processing equipment,
A heat transfer portion that is a groove disposed on the contact surface and filled with a heat medium; and a control portion that controls a chuck voltage.
The electrostatic chuck has the electrode on which the focus ring is placed and the chuck voltage is applied, and the focus ring is adsorbed by an electrostatic adsorption force caused by the chuck voltage applied to the electrode,
The heat transfer unit performs heat exchange of the focus ring,
The control unit changes the chuck voltage according to each step of the plasma processing including a plurality of steps including an etching step, and applies a high voltage to the electrode in the etching step. . Further comprising a control unit for controlling the pressure of the heat medium is the filling, the control unit, according to claim, characterized in that changing the pressure of the heat medium to be the filling in accordance with each step before Symbol plasma treatment 9. The plasma processing apparatus according to 8. The electrode, the plasma processing apparatus according to claim 8, wherein the benzalkonium encapsulated in the electrostatic chuck so as to face the focus ring. The plasma processing apparatus according to claim 8, wherein the focus ring has the groove. The plasma processing apparatus according to claim 8, wherein the electrostatic chuck has the groove. The plasma processing apparatus according to any one of claims 8 to 12, wherein the depth of said groove is 0.1mm or more. The plasma processing apparatus according to any one of claims 8 to 13 , wherein a corner portion of the groove is formed in an R shape. The groove plasma processing apparatus according to any one of claims 8 to 14, characterized in that it consists of at least one groove exhibits the focus ring concentric annular. In a focus ring that comes into contact with a contact surface in the periphery of the object to be processed, on an electrostatic chuck on which the object to be processed is placed,
A focus ring having a heat transfer portion filled with a heat medium on the contact surface. In an apparatus for mounting an object to be processed, comprising: an electrostatic chuck for mounting an object to be processed that is subjected to plasma processing; and a focus ring that contacts the electrostatic chuck at a contact surface around the object to be processed;
An apparatus for placing an object to be processed, wherein the contact surface has a heat transfer portion filled with a heat medium.