JP2005064136A - Method for manufacturing nitride semiconductor laser device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride semiconductor laser device that can easily control the outgoing position of a laser and is superior in yield. <P>SOLUTION: Solder is adhered in advance to the supporting substrate (102) of a stem (601), a nitride semiconductor laser chip (401) is mounted thereto, and then the solder is melted to fix the nitride semiconductor laser chip (401) on the supporting substrate (102). The thickness of the solder adhered to the supporting substrate (102) is ≥0.2 μm and ≤20 μm, and the thickness thereof after the nitride semiconductor laser chip (401) is fixed is ≥0.1 μm and ≤5 μm. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a nitride semiconductor laser device, and more particularly to a method for soldering a nitride semiconductor laser diode to a support member.

  Currently, laser devices using nitride semiconductors as light emitting materials ranging from blue to ultraviolet are being developed and put into practical use. However, various problems occur in the actual manufacturing process. In particular, a problem in a mounting process for coupling a laser diode chip (hereinafter referred to as an LD chip) and a mount member (stem or submount) is remarkable, which contributes to a decrease in yield in the manufacture of a nitride semiconductor laser device. Yes.

  A conventional semiconductor laser device will be described by taking as an example a configuration in which a nitride semiconductor LD chip is mounted on a stem without using a submount. FIG. 9 is a schematic view of a conventional nitride semiconductor laser device. In FIG. 9, 911 is a p-type electrode, 912 is an n-type electrode, 901 is a conductive substrate, 902 is a semiconductor growth layer, 903 (= 901 + 902) is a semiconductor LD chip, 905 is solder, 906 is a metal film (semiconductor) Reference numeral 908 denotes a stem support substrate.

  A method for mounting the semiconductor LD chip on the stem will be described. FIG. 10 is a schematic view of the nitride semiconductor laser device before mounting. The support substrate 908 of the stem and the solder foil 1005 which is the original form of the solder 905 are heated in a range of about 100 ° C. to 400 ° C. (At this time, the semiconductor LD chip may be heated or not heated) Solder foil 1005 is melted and pressure is applied to the semiconductor LD chip to bond the semiconductor LD chip and the stem.

  Generally, when a semiconductor LD chip is mounted on a mount member such as a stem, the coupling strength between the semiconductor LD chip and the mount member is ensured, heat conduction from the semiconductor LD chip to the mount member is improved, and the semiconductor LD chip is dissipated. In addition, the position and orientation of the semiconductor LD chip with respect to the mount member must be strictly set. If any of these is not good, the nitride semiconductor laser device to be obtained has a short lifetime or becomes a defective product that cannot emit laser light in a predetermined direction, resulting in a decrease in yield.

Japanese Laid-Open Patent Publication No. 10-107384 proposes to use a conductive adhesive to make a nitride semiconductor LD chip having an oxide substrate as a laser device having high bonding strength and high heat dissipation. Yes.
Japanese Patent Laid-Open No. 10-107384

  The inventor has confirmed that In-based, Ag-based, Sn-Ag-Cu-based, and Sn-based solders can obtain good thermal resistance with respect to the nitride semiconductor LD chip. However, when manufacturing a foil-shaped solder, only a solder having a thickness of 40 μm or more can be obtained. When mounting, the solder foil melts and pressure is applied to the semiconductor LD chip. The position was shifted and it was difficult to control the laser emission position.

  The present invention has been made in view of such problems, and an object of the present invention is to provide a method of manufacturing a nitride semiconductor laser device with a good yield for laser emission position control.

  In order to achieve the above object, the present invention provides a method for manufacturing a nitride semiconductor laser device in which a nitride semiconductor laser diode is mounted on a support member, wherein the nitride semiconductor laser diode is fixed to the support member by soldering. A solder having a thickness of 0.2 μm or more and 20 μm or less is attached to a portion of the support member where the nitride semiconductor laser diode is mounted, and the solder is melted to fix the nitride semiconductor laser diode. To do.

  In this method, when the solder is melted and pressure is applied to the semiconductor LD chip in the mounting process, since the solder is thin, the position shift of the semiconductor LD chip is small, the controllability of the laser emission position is improved, and the yield is increased. Goes up.

  Here, as the solder, a solder including one or more of In, Ag, Sn—Ag—Cu, and Sn may be used. Since these solders have good thermal resistance characteristics, the semiconductor LD chip can dissipate heat well.

  The thickness of the solder after the nitride semiconductor laser diode is fixed to the support member is preferably 0.1 μm or more and 5.0 μm or less. Thereby, it is possible to manufacture a nitride semiconductor laser device with good heat dissipation and improved controllability of the laser emission position.

  The solder can be attached to the support member by a transfer method.

  Here, the solder may be formed on a polytetrafluoroethylene tape by a molecular beam epitaxy method, and may be transferred to the support member by applying ultrasonic vibration through the tape. In this way, a nitride semiconductor laser with good productivity and good characteristics can be realized.

  In the present invention, the mount member means a component for directly mounting a semiconductor LD chip. For example, a submount for a semiconductor light emitting element chip or a holder (stem, In the case of loading on a frame or a package, this means the support base of the stem, the frame or the package itself.

  In the present invention, die bonding (or mounting) refers to bonding a semiconductor LD chip to a mounting member using solder or the like.

  Further, in the present invention, the solder is a material mainly composed of a metal that melts by heating and solidifies by returning to room temperature and exhibits adhesiveness for joining the semiconductor LD chip and the mounting member.

  In the present invention, the mount surface refers to the surface of the semiconductor LD chip that faces the holder with the solder sandwiched when the semiconductor LD chip is mounted on the holder.

  The semiconductor LD chip includes a substrate and a semiconductor growth layer. When an electrode or a metal multilayer film is formed on the substrate or the semiconductor growth layer, the semiconductor LD chip may include an electrode or a metal multilayer film. is there.

  9 and 10, the p-type electrode is distinguished from the metal film on the p-type electrode. The p-type electrode refers to the metal layer in contact with the p-type contact layer of the nitride semiconductor and the metal Refers to a part of the outer layer of the layer, the metal film on the p-type electrode refers to the surface metal layer on the p-type electrode side of the semiconductor LD chip before mounting, and a part of the inner metal layer of the surface metal layer, There is no strict distinction.

  In the present invention, the metal layer on the p-type electrode side refers to a combination of both the p-type electrode and the metal film on the p-type electrode.

The nitride semiconductor used in the present invention is a semiconductor composed of at least Al _x Ga _y In _z N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, x + y + z = 1). . Further, in the nitride semiconductor, about 20% or less of the nitrogen element that is a constituent component thereof may be replaced with one or more elements of the element group of As, P, and Sb. Moreover, Si, O, Cl, S, C, Ge, Zn, Cd, Mg, and Be may be doped in the nitride semiconductor.

  According to the present invention, it is possible to manufacture a nitride semiconductor laser device having excellent thermal characteristics and laser emission position controllability.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In this embodiment, a case where a stem in which Sn-3.0Ag-0.5Cu solder having a maximum film thickness portion of 8 μm is transferred to a support base is used is taken as an example.

  FIG. 1 is an enlarged schematic view of the periphery of a chip of a nitride semiconductor LD device before mounting in the present embodiment. In this embodiment, a metal organic chemical vapor deposition method (MOCVD method) is used for the growth of the semiconductor layer.

In FIG. 1, reference numeral 102 denotes a part of the support substrate of the stem, and 101 denotes Sn-3.0Ag-0.5Cu solder transferred to the stem. Reference numeral 122 denotes a metal multilayer film on the n-type electrode, 121 denotes an n-type electrode, and 111 denotes an n-type GaN substrate. An n-type GaN layer 112 having a thickness of 3 μm and an n-type having a thickness of 1.0 μm are sequentially arranged from the substrate side. Type cladding layer 113 (n-type Al _0.1 Ga _0.9 N), 0.1 μm thick n-type guide layer 114 (n-type GaN), active layer 115 (InGaN multiple quantum well structure), 0.03 μm thick p-type Evaporation prevention layer 116 (p-type Al _0.2 Ga _0.8 N), p-type guide layer 117 having a thickness of 0.1 μm (p-type GaN), p-type cladding layer 118 having a thickness of 0.6 μm (p-type Al _0.1 Ga _0.9 N) ), A p-type contact layer 119 (p-type GaN) having a thickness of 0.1 μm is stacked, and a metal layer on the p-type electrode side (a p-type electrode 131 and a metal film 132 on the p-type electrode) is formed. Has been. Reference numeral 120 denotes a buried region (SiO ₂ ), and 141 denotes a laser emission position.

  Further, the layer structure of the n-type electrode 121 is Hf (0.05 μm) and Al (0.15 μm) from the substrate side, and the metal film 122 on the n-type electrode is formed from Mo (0.01 μm), Pt (0.10 μm) and Au (0.15 μm) were formed in this order. The Hf / Al layer is a layer for ohmic contact with the n-type GaN substrate, Mo on the upper layer is a block layer for preventing contamination of Au and Al, and Au is a layer for hitting a wire.

As described above, after forming the electrode and the metal multilayer film, an atmospheric gas using a pressure of 5 × 10 ⁻⁴ Pa or lower, or an inert gas such as N ₂ or Ar, or at least one of O ₂ is used. Inside, heat treatment may be performed at a temperature of 200 ° C. or higher and 700 ° C. or lower for a predetermined time.

In the present embodiment, the semiconductor LD chip is manufactured using the above materials. However, the materials are not limited to these, and the growth substrate may be made of a nitride semiconductor material other than GaN, or nitride. However, it is possible to change such as using Si, SiC, ZrB ₂ , and GaAs.

  The growth layer may be made of a nitride semiconductor (for example, p-type AlGaInN as the p-type cladding layer 118, GaInNAs, GaInNP, etc. as the active layer 115). A multiple quantum well may be used for the cladding layer, and an InGaN crack prevention layer may be inserted between the n-type GaN layer 111 and the n-type cladding layer 113. As described above, the semiconductor LD chip used in this embodiment has a so-called ridge stripe structure.

  A method for manufacturing the semiconductor laser device of this embodiment will be described below. First, an LD semiconductor growth layer is formed on a semiconductor LD wafer by appropriately applying a process used for manufacturing a semiconductor element. As described above, in this embodiment, the MOCVD method is used for the growth of the semiconductor layer.

  Next, from the back side of the n-type GaN substrate 111, the thickness of the wafer is adjusted thinly to about 40 to 200 μm by polishing or etching. This is to make it easier to divide the wafer into individual LD chips in a later step. In particular, when the end face of the laser resonator is formed by division, it is desirable to adjust it to be as thin as 25 to 150 μm. In the present embodiment, the thickness of the wafer was adjusted to about 150 μm using a grinding machine, and then adjusted to about 100 μm using a polishing machine. Since the back surface of the wafer is polished by a polishing machine, it is flat.

  FIG. 2 is a schematic view of a nitride semiconductor LD wafer on which a large number of individual semiconductor laser structures obtained in the above process are formed. In FIG. 2, 201 is a laser resonator end face, 202 is a metal film surface on a p-type electrode, 110 is a buried region, 210 is a dividing line for dividing into bars, 211 is a metal layer on the p-type electrode side ( The p-type electrode 131 and the metal film 132 on the p-type electrode) and 212 are metal layers on the n-type electrode side (the n-type electrode 121 and the metal film 122 on the n-type electrode).

  Next, the wafer in this state is cleaved or etched along the dividing line 210 perpendicular to the stripe direction to form a bar shape.

  FIG. 3 is a schematic diagram of an LD bar obtained by dividing a nitride semiconductor LD wafer. In FIG. 3, 201 is a laser resonator end face, 202 is a metal film surface on a p-type electrode, 110 is a buried region, and 310 is a dividing line for dividing the chip.

In this LD bar state, an optical thin film coating is deposited on the end face of the laser resonator by vapor deposition, and the end face of one of the resonators is covered with a SiO ₂ layer and a TiO ₂ layer to form a multilayer film. At this time, the dielectric film of the coating is not applied to the p-type electrode side which is the mount surface.

  Thereafter, the LD bar is divided into individual semiconductor LD chips along the dividing line 310 in FIG. 3 to obtain a nitride semiconductor LD chip as shown in FIGS. 4 (a) and 4 (b).

  This dividing step was performed as follows. An LD bar was placed on the stage with the back side facing up, the scratch position was aligned using an optical microscope, and a scribe line was placed at the diamond point on the back side of the wafer. Then, a nitride semiconductor LD chip having a width of 400 μm and a resonator length of 600 μm was manufactured by appropriately applying a force to the wafer and dividing the wafer along a scribe line.

  Here, the chip dividing step by the scribing method has been described, but a method of dividing the chip by inserting scratches, grooves or the like from the back side of the substrate may be used. Other methods include a dicing method in which a wire saw or thin blade is used to cut or cut, a laser beam such as an excimer laser, and subsequent rapid cooling to cause cracks in the irradiated area, which is used as a scribe line. A scribing method, a laser ablation method or the like in which laser irradiation with high energy density is performed and this portion is evaporated to perform grooving may be used.

  4, (a) is a schematic view seen from the back side (GaN substrate side) of the nitride semiconductor LD chip before mounting obtained by the above method, and (b) is a diagram of the semiconductor LD chip. It is the schematic diagram seen from the surface side (growth layer side). In FIG. 4, 201 is the end face of the laser resonator, 401 is the surface of the metal film on the n-type electrode, 110 is the buried region, 202 is the surface of the metal film on the p-type electrode, 402 is the LD chip width, and 403 is the LD A chip resonator length, 410 indicates a semiconductor LD chip including all of the above. The buried region 110 is basically preferably made of an insulating material. However, a part of the buried region 110 may be conductive as long as the insulating property on the semiconductor growth layer side can be secured so that the current is confined in the ridge portion. .

  In the case of junction down, the surface 202 side (growth layer side, p-type electrode side) of the metal film on the p-type electrode of the nitride semiconductor LD chip becomes the mount surface. In this embodiment, the LD chip width 402 is 400 μm, and the LD chip resonator length 403 is 600 μm.

  Next, a semiconductor LD chip was mounted on the stem by a die bonding method. A method for transferring solder to the support substrate of the stem will be described. A tape made of Teflon (registered trademark, chemical name: polytetrafluoroethylene) having a length of 500 mm, a width of 800 μm, and a thickness of 5 μm was prepared, and this Teflon tape was Sn-3.0Ag− by molecular beam epitaxy (MBE) method. 0.5 Cu solder is deposited to a thickness of about 8 μm.

  Thereafter, the Teflon tape with solder is taken out from the MBE apparatus and aligned with the support substrate of the stem. After the alignment, the ultrasonic vibration of about 80 kHz is applied to the solder through the Teflon tape (from the surface where the solder is not deposited), and the stem support base is Sn 800 μm long × 800 μm wide × 8 μm thick. -3.0 Ag-0.5 Cu solder is transferred.

  In addition to the above, solder may be formed by vapor deposition, coating, sputtering, printing, plating, or the like.

  In this way, the semiconductor LD chip is mounted on the stem with the solder attached to the support base to obtain a nitride semiconductor laser device. 5 and 6 are schematic views of the obtained nitride semiconductor laser device. 5 and 6, reference numeral 102 denotes a stem support base, 101 denotes Sn-3.0Ag-0.5Cu solder, 132 denotes a metal film on a p-type electrode, 131 denotes a p-type electrode, and 501 denotes a nitride semiconductor LD chip. , A n-type GaN substrate, 121 an n-type electrode, 122 a metal film on the n-type electrode, 511 a wire for a p-type electrode, 141 a laser emission position, 512 a stem pin, 601 Refers to the entire stem.

  The process of mounting the semiconductor LD chip on the stem was performed as follows. First, the semiconductor LD chip 410 is placed on the surface of the support base 102 to which the solder 101 is attached, with the n-electrode side facing down. Subsequently, it is heated to about 250 ° C., and when the Sn-3.0Ag-0.5Cu solder 101 is melted, pressure is applied to the semiconductor LD chip 410 to join it.

  After the Sn-3.0Ag-0.5Cu solder 101 was solidified, the p-type electrode wire 511 was connected to the stem pin 512 from the surface of the metal film 132 on the p-type electrode. In this manner, the nitride semiconductor laser device shown in FIG. 6 was obtained. The support base 102 is made of a metal mainly composed of Cu, and a Pd film / Au film is sequentially formed on the surface thereof by plating.

  FIG. 7 is an explanatory diagram of the laser emission position. Reference numeral 601 denotes a stem, reference numeral 102 denotes a stem support base, and reference numeral 410 denotes a nitride semiconductor LD chip. The deviation between the design laser emission direction and the actual laser emission direction is θ, and the deviation in the X-axis direction and Y-axis direction from the design laser emission position is set as shown in FIG. 7 (the arrow direction is +). ).

All the emission positions of the nitride semiconductor laser devices (100) manufactured by the method of this embodiment were within the reference values (θ is within ± 2 °, and the X-axis and Y-axis directions are within ± 50 μm).
As for the average value of 100, θ was 1.24, the deviation in the X-axis direction was 11.9 μm, and the deviation in the Y-axis direction was 11.3 μm.

  Further, the heat dissipation is based on the thermal resistance (° C./W) as an index (indicating a temperature increase when 1 W of electric power is input), and the smaller the value, the better the heat dissipation. In the nitride semiconductor laser device of this embodiment (average of 35), the thermal resistance was 9.6 (° C./W).

  For comparison, a nitride semiconductor laser device was manufactured using Sn-3.0Ag-0.5Cu solder foil having a thickness of 50 μm as in the conventional method described in the background art. In this case, regarding the emission positions of the manufactured nitride semiconductor laser devices (100), 63 were within the reference value.

  Compared to the conventional method, the reason why the method of the present embodiment is better with respect to the controllability of the laser emission position is that the thickness of the solder is thin, so that the pressure is applied to the nitride semiconductor LD chip on the molten solder. This is considered to be because the positional deviation can be suppressed even if it is applied.

  FIG. 8 is a graph showing the relationship between the film thickness of the Sn-3.0Ag-0.5Cu solder transferred to the stem and the yield with respect to the laser emission position. From the graph, it can be seen that when the thickness is 20 μm (20000 nm) or more, the control of the laser emission position rapidly decreases. Further, if it is 0.2 μm (200 nm) or less, the bonding strength is lowered. That is, the thickness of the solder needs to be 0.2 μm or more and 20 μm or less.

  In order to investigate the relationship between the type of solder and the thermal resistance, a nitride semiconductor laser device was manufactured using a stem in which Pb—Zn solder having a maximum film thickness of 8 μm was transferred to a support base of the stem. In this nitride semiconductor laser device (average of 35), the thermal resistance was 21.9 (° C./W).

  The reason why the method of this embodiment has a better thermal resistance than this example is not clear in detail because the interaction with the stem surface, solder, n-type electrode, metal film, and GaN substrate surface is entangled. For this reason, it is necessary to examine individually and compare thermal resistance. However, good thermal resistance was not obtained for Zn solder.

  As solder with good thermal resistance, not only Sn-3.0Ag-0.5Cu but also Au-Sn (Au-30Sn, Au-90Sn, etc.), In-Sn, In-Ag, In-Ag-Pb, Sn, Sn-Pb, Sn-Sb, Sn-Ag, Sn-Sb, Sn-Ag-Pb, Sn-Ag-Cu, Sn-Pb-Sb, Pb-Sb, and Pb-Ag are used. Even in this case, the same effect as in the present embodiment can be obtained.

  The thickness of the solder after mounting was changed by changing the load at the time of mounting. As a result, it was found that the current-voltage characteristics deteriorate when the solder thickness after mounting is 0.1 μm or less. This is presumably because, as a result of increasing the mounting load in order to make the solder thickness 0.1 μm or less, a load was applied to the LD chip, and defects or the like were introduced in the vicinity of the active layer.

  In addition, when the solder thickness after mounting is 5.0 μm or more, air bubbles or the like are introduced into the solder, the thermal conductivity of the solder region is lowered, and the thermal resistance exceeds 20 (° C./W), It is not preferable. From the above, the thickness of the solder after mounting is preferably 0.1 μm or more and 5.0 μm or less.

  In this embodiment, Hf / Al is used as the n-type electrode. However, in addition to Hf, Ti, Co, Cu, Ag, Ir, Sc, Au, Cr, Mo, La, W, Al, Tl, Y, La , Ce, Pr, Nd, Sm, Eu, Tb, Zr, Hf, V, Nb, Ta, Pt, Ni, Pd and compounds thereof may be used. Besides Al, Au, Ni, Ag, Ga, In, Sn, Pb, Sb, Zn, Si, Ge and their compounds may be used, and the film thickness of the n-type electrode is not limited to the above-mentioned value.

Further, the semiconductor LD chip is not limited to a specific structure, and can be changed such as using Si, SiC, ZrB ₂ , GaAs or other nitride semiconductor materials as a substrate, and a semiconductor growth layer For example, GaNαX _1- α (0.51 ≦ α ≦ 1) (X is an element including at least one of P, As, Sb, Bi, etc.), BNβX _1- β (0.51). ≦ β ≦ 1), AlγN _1- γ (0.51 ≦ γ ≦ 1), AlδGa _1- δNεX _1- ε (0 <δ < ₁ , 0.51 ≦ ε ≦ 1), InNζX _1- ζ (0. 51 ≦ ζ ≦ 1), InηGa _1- ηNμX _1- μ (0 <η <1, 0.51 ≦ μ ≦ 1), InνGaξAl _1- ν _- ξNτX _1- τ (0 <ν <1, 0 <ξ < 1, 0.51 ≦ τ ≦ 1) may be used.

Further, as a filling material on the p-type electrode side of the semiconductor LD chip, other nitride semiconductors such as SiO, SiO ₂ , TiO ₂ , SiN, GaAs, GaP, GaN, and InN may be used.

  In the case of a junction down structure in which the p-type electrode is mounted on the stem support base so that the p-type electrode faces the stem side, the same effect can be obtained by employing the manufacturing method of the present invention.

  The present invention is used for manufacturing a laser device, and is particularly suitable for manufacturing a device that emits a laser beam having a short wavelength suitable for recording information on an optical recording medium.

1 is an enlarged schematic view around a chip of a nitride semiconductor LD device manufactured according to an embodiment of the present invention. FIG. It is a schematic diagram of a nitride semiconductor LD wafer in which a number of semiconductor laser structures are formed. It is a schematic diagram of the LD bar which divided | segmented the nitride semiconductor LD wafer. FIG. 4 is a schematic diagram (a) from the back surface (GaN substrate side) of the nitride semiconductor LD chip before mounting, and a schematic diagram (b) from the front surface (growth layer side). It is a schematic diagram of a nitride semiconductor laser device. It is a schematic diagram of a nitride semiconductor laser device. It is explanatory drawing of the laser emission position of a nitride semiconductor laser apparatus. It is a figure which shows the relationship between the film thickness of Sn-3.0Ag-0.5Cu solder transcribe | transferred to the stem, and the yield regarding a laser emission position. It is the schematic of the conventional nitride semiconductor laser apparatus. It is the schematic before the mounting of the conventional nitride semiconductor laser apparatus.

Explanation of symbols

101 Sn-3.0Ag-0.5Cu solder 102 Part of support base of stem 111 n-type GaN substrate 112 n-type GaN layer 113 n-type clad layer 114 n-type guide layer 115 active layer 116 p-type evaporation prevention layer 117 p Type guide layer 118 P-type cladding layer 119 P-type contact layer 120 Embedded region 121 N-type electrode 122 Metal multilayer film on n-type electrode 131 P-type electrode 132 Metal film on p-type electrode 141 Laser emission position 201 Laser resonator end face 202 Surface of metal film on p-type electrode 210 Dividing line for dividing into bar shape 211 Metal layer on p-type electrode side 212 Metal layer on n-type electrode side 310 Dividing line for dividing into chips 401 On n-type electrode Metal film surface,
402 LD chip width 403 LD chip resonator length 410 Nitride semiconductor LD chip 501 Semiconductor growth layer of nitride semiconductor LD chip 511 Wire for p-type electrode 512 Stem pin 601 Stem 901 Conductive substrate 902 Semiconductor growth layer 903 Semiconductor LD Chip 905 Solder 906 Metal film (n-electrode side of semiconductor LD chip)
908 Stem support base 911 P-type electrode 912 N-type electrode 1005 Solder foil

Claims (5)

A method of manufacturing a nitride semiconductor laser device in which a nitride semiconductor laser diode is mounted on a support member, wherein the nitride semiconductor laser diode is fixed to the support member by soldering,
Solder having a thickness of 0.2 μm or more and 20 μm or less is attached to a portion of the support member where the nitride semiconductor laser diode is mounted, and the nitride semiconductor laser diode is fixed by melting the solder. A method for manufacturing a nitride semiconductor laser device. 2. The method for manufacturing a nitride semiconductor laser device according to claim 1, wherein a solder containing one or more of In, Ag, Sn—Ag—Cu, and Sn is used as the solder. 2. The method of manufacturing a nitride semiconductor laser device according to claim 1, wherein the thickness of the solder after the nitride semiconductor laser diode is fixed to the support member is 0.1 μm or more and 5.0 μm or less. 2. The method of manufacturing a nitride semiconductor laser device according to claim 1, wherein the solder is attached to a support member by a transfer method. The solder is formed on a tape made of polytetrafluoroethylene by a molecular beam epitaxy method, and ultrasonic vibration is applied through the tape to transfer it to a support member. Item 5. A method for manufacturing a nitride semiconductor laser device according to Item 4.

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