JP2005063908A - Transfer film for shadow mask formation - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a transfer film for shadow mask formation capable of surely providing a stacked pattern comprising an insulation layer and a conductive layer with high dimensional accuracy without degrading an original function of a shadow mask nor causing trouble such as a pin hole, and capable of manufacturing a predetermined shadow mask with high productivity. <P>SOLUTION: This transfer film is composed by forming any one layer or a plurality of layers out of a resist film, a conductive powder-containing resin layer and an insulating powder-containing resin layer on a support film. The transfer film can be obtained by forming a stacked film by transferring the conductive powder-containing resin layers and the insulating powder-containing resin layers on a substrate by one layer at a time or a plurality of layers at the same time; a resist pattern is formed by exposing and developing the resist film; a pattern corresponding to the resist pattern is formed by executing an etching process; and thereafter the stacked pattern is formed by carrying out a baking process. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a transfer film for forming a shadow mask for, for example, a color cathode ray tube of a display, and more specifically, to form a laminated pattern in a shadow mask in which a laminated pattern composed of an insulating layer and a conductive layer is formed on a shadow mask substrate. The present invention relates to a transfer film for forming a shadow mask used in the process.

  In a color cathode ray tube (CRT) of a display, an electron beam emitted from an electron gun is irradiated on each of the RGB phosphor screens. As a means for introducing the electron beam into an appropriate phosphor position, for example, A shadow mask made of a metal plate having openings formed at a constant pitch is used.

In recent years, from the viewpoint of improving the electron beam transmission efficiency, for example, on a shadow mask substrate made of metal, a laminated pattern comprising an insulating layer and a conductive layer formed on the insulating layer is formed. A shadow mask is used to introduce an electron beam into an opening with high efficiency by applying a voltage of a predetermined magnitude between a shadow mask substrate and a conductive layer.
In such a shadow mask, the laminated pattern is formed by, for example, a screen printing method in which a laminated pattern forming material is screen-printed on a shadow mask substrate and fired (see, for example, Patent Document 1). .
JP-A-6-283094

However, in the conventional method of forming a laminated pattern by a screen printing method or the like that is preferably used, a paste-like pattern forming material may enter an opening in a shadow mask substrate, which degrades the original function of the shadow mask. As a result, there is a problem that the resolution of the display is lowered.
Further, since the shadow mask substrate itself is generally flexible, there is a problem that it is difficult to form a desired laminated pattern on the shadow mask substrate with high dimensional accuracy.

  The present invention has been made based on the circumstances as described above, and its purpose is to form a laminated pattern composed of an insulating layer and a conductive layer without deteriorating the original function of the shadow mask, and to a pinhole or the like. To provide a transfer film for forming a shadow mask capable of producing a predetermined CRT shadow mask with high productivity in addition to being able to be reliably formed with high dimensional accuracy without causing the above-mentioned problems It is in.

The transfer film for forming a shadow mask of the present invention (hereinafter also simply referred to as “transfer film”) has a laminated film including a conductive powder-containing resin layer and an insulating powder-containing resin layer formed on a support film. It is characterized by.
The transfer film of the present invention preferably includes a resist film in the laminated film.

In the transfer film of the present invention, the conductive powder contained in the conductive powder-containing resin layer is preferably a silver powder.
In the transfer film of the present invention, the insulating powder contained in the insulating powder-containing resin layer is preferably a low-melting glass frit, and the insulating powder contains an inorganic oxide filler. More preferably it is.

  According to the transfer film for forming a shadow mask of the present invention, a laminated pattern composed of an insulating layer and a conductive layer is high without deteriorating the original function of the shadow mask and without causing defects such as pinholes. In addition to being able to be formed on a shadow mask substrate with dimensional accuracy, a desired shadow mask for a cathode ray tube can be manufactured with high productivity.

  According to the shadow mask manufacturing method using the transfer film of the present invention, the laminated pattern composed of the insulating layer and the conductive layer can cause defects such as pinholes without deteriorating the original function of the shadow mask. In addition to being able to be formed on a shadow mask substrate with high dimensional accuracy, the desired shadow mask for a cathode ray tube can be manufactured with high productivity.

  Hereinafter, the present invention will be described in detail.

<Transfer film>
The transfer film of the present invention is (b) formed on a support film in a state where the conductive powder-containing resin layer and the insulating powder-containing resin layer are laminated in this order, or (b) Examples thereof include a resist film, a conductive powder-containing resin layer, and an insulating powder-containing resin layer formed on a support film in a state where they are laminated in this order.
In the above transfer film, each of the conductive powder-containing resin layer and the insulating powder-containing resin layer may be formed of a laminate composed of n layers independent of each other (n is an integer of 2 or more). .
The thickness of the resist film formed on the support film is, for example, 1 to 20 μm.
Further, the thicknesses of the insulating powder-containing resin layer and the conductive powder-containing resin layer are both 5 to 500 μm, for example, although they vary depending on the powder content, the type and size of the member, and the like.

[Support film]
The support film constituting the transfer film is preferably a resin film having heat resistance and solvent resistance and flexibility. Since the support film is flexible, the paste-like composition can be applied by, for example, a roll coater, and the formed laminated film forming material layer is stored in a rolled state and supplied. can do.
Examples of the resin forming the support film include polyethylene terephthalate, polyester, polyethylene, polypropylene, polystyrene, polyimide, polyvinyl alcohol, polyvinyl chloride, polyfluoroethylene, and other fluorine-containing resins, nylon, and cellulose.
The thickness of the support film is, for example, 20 to 100 μm.
Moreover, it is preferable that the release film is given to the surface of the support film. Thereby, peeling operation from the support film of a laminated film formation material layer can be performed easily.

[Insulating powder-containing resin layer]
The insulating powder-containing resin layer is formed by applying a paste-like insulating powder-containing resin composition containing an insulating powder, a binder resin, and a solvent, drying the coating film, It is obtained by removing all.
Here, as a method of applying the insulating powder-containing resin composition, it is possible to efficiently form a coating film having a large film thickness (for example, 10 μm or more) excellent in film thickness uniformity. Specifically, a coating method using a roll coater, a coating method using a doctor blade, a coating method using a curtain coater, a coating method using a die coater, a coating method using a wire coater, and the like can be mentioned as preferable examples.
Moreover, as drying conditions of a coating film, it is set as about 0.5 to 30 minutes, for example at 50-150 degreeC, and the residual ratio (content rate in a resist layer or a powder containing resin layer) after drying is as follows. Usually, it is within 2% by mass.
When forming an insulating powder resin layer composed of a laminate composed of a plurality of layers on a support film, a drying process may be performed one by one, or after the laminate is formed, the drying process is performed collectively. However, it is preferable that the drying process is performed one by one.

  The insulating powder-containing resin composition constituting the insulating powder-containing resin layer contains (a) insulating powder, (b) a binder resin, and (c) a solvent as essential components.

(A) insulating powder;
The insulating powder used in the insulating powder-containing resin composition is preferably a low-melting glass frit from the viewpoint of forming a uniform film having excellent adhesion and high withstand voltage.
As the low melting point glass frit, for example, those having a softening point of 650 ° C. or less are used, and those having a softening point of 400 to 600 ° C. are preferably used. When the softening point of the low-melting glass frit is less than 400 ° C., the melting of the low-melting glass frit starts before the below-mentioned binder resin is decomposed and removed in the baking process, so that an organic residue is left in the pattern after baking. May remain. Further, when the softening point of the low melting point glass frit exceeds 650 ° C., the low melting point glass frit is not sufficiently melted in the firing process, and the adhesion of the pattern after firing and the withstand voltage of the insulating layer to be formed are sufficient. There is a risk that it may not be obtained.

Examples of the composition of such a low melting point glass frit include (1) lead oxide, boron oxide, silicon oxide type (PbO—B ₂ O ₃ —SiO ₂ type), and (2) lead oxide, boron oxide, silicon oxide. Aluminum oxide system (PbO—B ₂ O ₃ —SiO ₂ —Al ₂ O ₃ system), (3) Zinc oxide, boron oxide, silicon oxide system (ZnO—B ₂ O ₃ —SiO ₂ system), (4) Zinc oxide, boron oxide, silicon oxide, aluminum oxide system (ZnO—B ₂ O ₃ —SiO ₂ —Al ₂ O ₃ system), (5) lead oxide, zinc oxide, boron oxide, silicon oxide system (PbO—ZnO—) (B ₂ O ₃ —SiO ₂ system), (6) lead oxide, zinc oxide, boron oxide, silicon oxide, aluminum oxide system (PbO—ZnO—B ₂ O ₃ —SiO ₂ —Al ₂ O ₃ system), (7 ) Bismuth oxide, boron oxide, silicon oxide (Bi ₂ O) _(3- B ₂ O ₃ —SiO ₂ system), (8) Bismuth oxide, boron oxide, silicon oxide, aluminum oxide system (Bi ₂ O ₃ —B ₂ O ₃ —SiO ₂ —Al ₂ O ₃ system), (9 ) Bismuth oxide, zinc oxide, boron oxide, silicon oxide system (Bi ₂ O ₃ —ZnO—B ₂ O ₃ —SiO ₂ system), (10) Bismuth oxide, zinc oxide, boron oxide, silicon oxide, aluminum oxide system ( Bi ₂ O ₃ —ZnO—B ₂ O ₃ —SiO ₂ —Al ₂ O ₃ type). Among these low melting point glass frits, it is preferable to use the lead-free glass frit described in the above (3), (4), (7), (8), (9) and (10) because of environmental problems. Among these, from the viewpoint of the temporal stability of the insulating powder-containing resin composition, a lead-free glass frit mainly composed of bismuth oxide described in (7), (8), (9) and (10) is used. Is particularly preferred.

Moreover, it does not specifically limit as a shape of the said low melting glass frit, As an average particle diameter, it is preferable that it is 0.1-10 micrometers, for example, More preferably, it is 0.5-5 micrometers. When the average particle size of the low-melting glass frit is less than 0.1 μm, the specific surface area of the low-melting glass frit is increased, so that the agglomeration of particles is likely to occur in the insulating powder-containing resin composition, which is stable. It may be difficult to obtain a dispersed state and a change with time such as thickening of the insulating powder-containing resin composition may occur. On the other hand, when the average particle size of the low-melting glass frit is 10 μm or more, it is difficult to obtain a high-definition laminated pattern.
The low melting point glass frit can be used alone or in combination of two or more kinds of low melting point glass frits having different glass frit compositions, different softening points, different shapes, and different average particle sizes.

Furthermore, the insulating powder used in the insulating powder-containing resin composition preferably contains an inorganic oxide filler such as aluminum oxide, silicon oxide, or titanium oxide. By containing these inorganic oxide fillers, it is possible to prevent the retention of the laminated pattern shape after firing and prevent the conductive layer from entering the insulating layer, and to reliably form an accurate laminated pattern.
The shape of the inorganic oxide filler is not particularly limited, and the average particle diameter is preferably from 0.1 to 10 μm, more preferably from 0.5 to 5 μm, like the low melting point glass frit.
The inorganic oxide filler can be used alone or in combination of two or more inorganic oxide fillers having different inorganic oxide filler compositions, different shapes, and different average particle diameters, as in the low melting point glass frit.
In addition, content of the said inorganic oxide filler is 500 mass parts or less with respect to 100 mass parts of low melting glass frit, Preferably it is 10-300 mass parts, Most preferably, it is 25-200 mass parts. If the content of the inorganic oxide filler exceeds 500 parts by mass, the adhesiveness of the resulting laminated pattern may be significantly reduced.

(B) binder resin;
Various resins can be used as the binder resin constituting the insulating powder-containing resin composition, but it is preferable to use a resin containing an alkali-soluble resin in a proportion of 30 to 100% by weight. Here, “alkali-soluble” refers to the property of being dissolved by an alkaline etching solution and having a solubility to the extent that a desired etching process is performed.
Specific examples of such alkali-soluble resins include (meth) acrylic resins, hydroxystyrene resins, novolac resins, and polyester resins.
Among such alkali-soluble resins, particularly preferred are the following copolymer of monomer (a) and monomer (c), monomer (a), monomer (b) and monomer (c): An acrylic resin such as

Monomer (I): Carboxyl group-containing monomers Examples of carboxyl group-containing monomers include acrylic acid, methacrylic acid, maleic acid, fumaric acid, crotonic acid, itaconic acid, citraconic acid, mesaconic acid, cinnamic acid, and succinic acid. Examples thereof include mono (2- (meth) acryloyloxyethyl) and ω-carboxy-polycaprolactone mono (meth) acrylate.
Monomer (b): OH-containing monomers Examples of OH-containing monomers include hydroxyl groups such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, and 3-hydroxypropyl (meth) acrylate. Containing monomers: Phenolic hydroxyl group-containing monomers such as o-hydroxystyrene, m-hydroxystyrene, and p-hydroxystyrene can be exemplified.
Monomer (C): Other copolymerizable monomers Examples of other monomers copolymerizable with monomer (b) and monomer (b) include, for example, methyl (meth) acrylate, ethyl (meth) acrylate, N-butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, n-lauryl (meth) acrylate, benzyl (meth) acrylate, glycidyl (meth) acrylate, dicyclopentanyl (meth) acrylate (Meth) acrylic acid esters other than the monomer (a) such as; aromatic vinyl monomers such as styrene and α-methylstyrene; conjugated dienes such as butadiene and isoprene; polystyrene, poly (meth) acrylate, At one end of polymer chain such as ethyl poly (meth) acrylate and poly (meth) acrylate benzyl Meth) and the like can be exemplified macromonomers having a polymerizable unsaturated group such as acryloyl group.

  The copolymer of the monomer (a) and the monomer (c) and the copolymer of the monomer (a), the monomer (b) and the monomer (c) are due to the presence of a copolymer component derived from the monomer (a). , Having alkali solubility. Among these, the copolymer of monomer (a), monomer (b) and monomer (c) is particularly preferable from the viewpoints of dispersion stability of the insulating powder particles and solubility in an alkali developer described later. The content of the copolymer component derived from the monomer (a) in this copolymer is preferably 5 to 60% by mass, particularly preferably 10 to 40% by mass, and the content of the copolymer component derived from the monomer (b) The content is preferably 1 to 50% by mass, particularly preferably 5 to 30% by mass.

As the molecular weight of the alkali-soluble resin, the polystyrene-equivalent weight average molecular weight (hereinafter also simply referred to as “Mw”) by GPC is preferably 5,000 to 5,000,000, and more preferably 10, 000 to 300,000.
In addition, the content ratio of the binder resin in the insulating powder-containing resin composition is, for example, 1 to 200 parts by weight, preferably 5 to 100 parts by weight with respect to 100 parts by weight of the insulating powder. Most preferably, it is 10-50 mass parts.

(C) solvent;
The insulating powder-containing resin composition usually contains a solvent. As the solvent, the affinity with the insulating powder and the solubility of the binder resin are good, the resin composition containing the insulating powder can be imparted with an appropriate viscosity, and can be easily dried. It is preferable that it can be removed by evaporation.
Specific examples of such solvents include ketones such as diethyl ketone, methyl butyl ketone, dipropyl ketone, and cyclohexanone; alcohols such as n-pentanol, 4-methyl-2-pentanol, cyclohexanol, and diacetone alcohol; Ether-based alcohols such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, and propylene glycol monoethyl ether; saturated aliphatic monocarboxylic acid alkyl such as n-butyl acetate and amyl acetate Esters; Lactic acid esters such as ethyl lactate and lactic acid-n-butyl; methyl cellosolve acetate, ethyl cellosolve acetate, propylene glycol monomethyl ether Seteto, ethyl 3-ethoxypropionate can be exemplified and ether-based esters such as these can be used alone or in combination of two or more.
The content ratio of the solvent in the insulating powder-containing resin composition can be appropriately selected within a range in which good film formability (fluidity or plasticity) can be obtained, but with respect to 100 parts by mass of the insulating powder. For example, it is 1 to 10,000 parts by mass, preferably 10 to 1,000 parts by mass.

Insulating powder-containing resin composition includes, in addition to the above components, inorganic powder, plasticizer, development accelerator, adhesion aid, storage stabilizer, antifoaming agent, antioxidant, ultraviolet absorber, dispersion Various additives such as an agent, a crosslinking agent, a photopolymerization initiator, a photoacid generator, a thermal polymerization initiator, and a thermal acid generator may be contained as optional components.
In particular, in the insulating powder-containing resin composition, a plasticizer is usually used in order to maintain the flexibility and transferability of the transfer film of the present invention. Various compounds can be used as the plasticizer used in the insulating powder-containing resin composition, such as dibutyl adipate, diisobutyl adipate, di-2-ethylhexyl adipate, di-2-ethylhexyl azelate, dibutyl sebacate. , Dibutyl diglycol adipate, propylene glycol monolaurate, propylene glycol monooleate, di-2-ethylhexyl phthalate, and other di (meth) acrylates of alkylene glycol such as ethylene glycol and propylene glycol; polyethylene glycol, polypropylene glycol Di (meth) acrylates of polyalkylene glycols such as: glycerin, 1,2,4-butanetriol, trimethylolalkane, tetramethylolalkane, pentae Poly (meth) acrylates of trihydric or higher polyhydric alcohols such as sitolitol and dipentaerythritol and their dicarboxylic acid modified products; poly (meth) acrylates of polyalkylene glycol adducts of trihydric or higher polyhydric alcohols, etc. A (meth) acrylate compound having at least one (meth) acryloyl group in the molecule is used.
As content of the plasticizer in an insulating powder containing resin composition, it is preferable to contain in the ratio of 0.5-30 mass parts with respect to 100 mass parts of insulating powder, More preferably, it is 1-20 masses. Part.
The insulating powder-containing resin composition may contain a silyl group-containing compound for the purpose of improving the dispersion stability of the insulating powder. The silyl group-containing compound is preferably a silyl group-containing compound represented by the following general formula (1) [saturated alkyl group-containing (alkyl) alkoxysilane].

(In the formula, p is an integer of 3 to 20, m is an integer of 1 to 3, n is an integer of 1 to 3, and a is an integer of 1 to 3.)

In the said General formula (1), p which shows carbon number of a saturated alkyl group shall be an integer of 3-20, Preferably it is set as an integer of 4-16.
Even when a saturated alkyl group-containing (alkyl) alkoxysilane having p of less than 3 is contained, sufficient flexibility may not be exhibited in the obtained film forming material layer. On the other hand, a saturated alkyl group-containing (alkyl) alkoxysilane having a p value of more than 20 has a high decomposition temperature, and an organic substance (said silane derivative) is used in the baking step by the method for producing a laminated pattern using the transfer film of the present invention. In some cases, a part of the organic substance remains in the formed insulating layer without being completely decomposed and removed.

Specific examples of the silyl group-containing compound represented by the general formula (1) include n-propyldimethylmethoxysilane, n-butyldimethylmethoxysilane, n-decyldimethylmethoxysilane, n-hexadecyldimethylmethoxysilane, n -Saturated alkyldimethylmethoxysilanes such as eicosyldimethylmethoxysilane (a = 1, m = 1, n = 1);
Saturated alkyldiethylmethoxysilanes such as n-propyldiethylmethoxysilane, n-butyldiethylmethoxysilane, n-decyldiethylmethoxysilane, n-hexadecyldiethylmethoxysilane, n-eicosyldiethylmethoxysilane (a = 1, m = 1, n = 2);
Saturated alkyldipropylmethoxysilanes (a = 1, m = 1) such as n-butyldipropylmethoxysilane, n-decyldipropylmethoxysilane, n-hexadecyldipropylmethoxysilane, n-eicosyldipropylmethoxysilane , N = 3);
Saturated alkyldimethylethoxysilanes such as n-propyldimethylethoxysilane, n-butyldimethylethoxysilane, n-decyldimethylethoxysilane, n-hexadecyldimethylethoxysilane, n-eicosyldimethylethoxysilane (a = 1, m = 2, n = 1);
Saturated alkyldiethylethoxysilanes such as n-propyldiethylethoxysilane, n-butyldiethylethoxysilane, n-decyldiethylethoxysilane, n-hexadecyldiethylethoxysilane, n-eicosyldiethylethoxysilane (a = 1, m = 2, n = 2);
Saturated alkyldipropylethoxysilanes such as n-butyldipropylethoxysilane, n-decyldipropylethoxysilane, n-hexadecyldipropylethoxysilane, n-eicosyldipropylethoxysilane (a = 1, m = 2) , N = 3);
Saturated alkyldimethylpropoxysilanes such as n-propyldimethylpropoxysilane, n-butyldimethylpropoxysilane, n-decyldimethylpropoxysilane, n-hexadecyldimethylpropoxysilane, n-eicosyldimethylpropoxysilane (a = 1, m = 3, n = 1);
Saturated alkyl diethylpropoxysilanes such as n-propyldiethylpropoxysilane, n-butyldiethylpropoxysilane, n-decyldiethylpropoxysilane, n-hexadecyldiethylpropoxysilane, n-eicosyldiethylpropoxysilane (a = 1, m = 3, n = 2);
Saturated alkyldipropylpropoxysilanes such as n-butyldipropylpropoxysilane, n-decyldipropylpropoxysilane, n-hexadecyldipropylpropoxysilane, n-eicosyldipropylpropoxysilane (a = 1, m = 3) , N = 3);

Saturated alkylmethyldimethoxysilanes such as n-propylmethyldimethoxysilane, n-butylmethyldimethoxysilane, n-decylmethyldimethoxysilane, n-hexadecylmethyldimethoxysilane, n-eicosylmethyldimethoxysilane (a = 2, m = 1, n = 1);
Saturated alkylethyldimethoxysilanes such as n-propylethyldimethoxysilane, n-butylethyldimethoxysilane, n-decylethyldimethoxysilane, n-hexadecylethyldimethoxysilane, n-eicosylethyldimethoxysilane (a = 2, m = 1, n = 2);
Saturated alkylpropyldimethoxysilanes such as n-butylpropyldimethoxysilane, n-decylpropyldimethoxysilane, n-hexadecylpropyldimethoxysilane, n-eicosylpropyldimethoxysilane (a = 2, m = 1, n = 3) ;
Saturated alkylmethyldiethoxysilanes such as n-propylmethyldiethoxysilane, n-butylmethyldiethoxysilane, n-decylmethyldiethoxysilane, n-hexadecylmethyldiethoxysilane, n-eicosylmethyldiethoxysilane (A = 2, m = 2, n = 1);
Saturated alkylethyldiethoxysilanes such as n-propylethyldiethoxysilane, n-butylethyldiethoxysilane, n-decylethyldiethoxysilane, n-hexadecylethyldiethoxysilane, n-eicosylethyldiethoxysilane (A = 2, m = 2, n = 2);
Saturated alkylpropyldiethoxysilanes such as n-butylpropyldiethoxysilane, n-decylpropyldiethoxysilane, n-hexadecylpropyldiethoxysilane, n-eicosylpropyldiethoxysilane (a = 2, m = 2) , N = 3);
Saturated alkylmethyldipropoxysilanes such as n-propylmethyldipropoxysilane, n-butylmethyldipropoxysilane, n-decylmethyldipropoxysilane, n-hexadecylmethyldipropoxysilane, n-eicosylmethyldipropoxysilane (A = 2, m = 3, n = 1);
Saturated alkylethyldipropoxysilanes such as n-propylethyldipropoxysilane, n-butylethyldipropoxysilane, n-decylethyldipropoxysilane, n-hexadecylethyldipropoxysilane, n-eicosylethyldipropoxysilane (A = 2, m = 3, n = 2);
Saturated alkylpropyl dipropoxysilanes such as n-butylpropyldipropoxysilane, n-decylpropyldipropoxysilane, n-hexadecylpropyldipropoxysilane, n-eicosylpropyldipropoxysilane (a = 2, m = 3) , N = 3);

Saturated alkyltrimethoxysilanes such as n-propyltrimethoxysilane, n-butyltrimethoxysilane, n-decyltrimethoxysilane, n-hexadecyltrimethoxysilane, n-eicosyltrimethoxysilane (a = 3, m = 1);
Saturated alkyltriethoxysilanes such as n-propyltriethoxysilane, n-butyltriethoxysilane, n-decyltriethoxysilane, n-hexadecyltriethoxysilane, n-eicosyltriethoxysilane (a = 3, m = 2);
Saturated alkyltripropoxysilanes such as n-propyltripropoxysilane, n-butyltripropoxysilane, n-decyltripropoxysilane, n-hexadecyltripropoxysilane, n-eicosyltripropoxysilane (a = 3, m = 3) etc. can be mentioned, These can be used individually or in combination of 2 or more types.

  Among these, n-butyltrimethoxysilane, n-decyltrimethoxysilane, n-hexadecyltrimethoxysilane, n-decyldimethylmethoxysilane, n-hexadecyldimethylmethoxysilane, n-butyltriethoxysilane, n- Decyltriethoxysilane, n-hexadecyltriethoxysilane, n-decylethyldiethoxysilane, n-hexadecylethyldiethoxysilane, n-butyltripropoxysilane, n-decyltripropoxysilane, n-hexadecyltripropoxy It is particularly preferable to use silane or the like.

  The content ratio of the silyl group-containing compound in the insulating powder-containing resin composition is preferably 5 parts by mass or less, more preferably 3 parts by mass with respect to 100 parts by mass of the insulating powder such as glass frit. It is as follows. When the ratio of the silyl group-containing compound is excessive, the viscosity increases with time when the resulting insulating powder-containing resin composition is stored, or the reaction occurs between the silyl group-containing compounds, and after firing It may cause organic substances to remain.

The insulating powder-containing resin composition is prepared by uniformly dissolving the binder resin and, if necessary, the optional organic component into a vehicle, and then mixing the insulating powder and, if necessary, the optional inorganic powder. It can be prepared by kneading using a kneader such as a roll kneader, mixer, homomixer, ball mill, or bead mill.
The insulating powder-containing resin composition prepared as described above is a paste-like composition having fluidity suitable for application, and its viscosity is, for example, 100 to 100,000 cp, preferably 500 to 10,000 cp.

[Conductive powder-containing resin layer]
The conductive powder-containing resin layer is formed by applying a paste-like conductive powder-containing resin composition containing a conductive powder, a binder resin and a solvent, drying the coating film, It is obtained by removing all.
As the coating method of the conductive powder-containing resin composition and the drying treatment conditions of the coating film, those exemplified in the case of forming the insulating powder-containing resin layer can be used.

The conductive powder-containing resin composition contains conductive powder, a binder resin and a solvent as essential components.
Examples of the conductive powder used in the conductive powder-containing resin composition include particles made of metals and alloys such as Ag, Au, Al, Cu, and Ag—Pd alloy. A mixture of seeds or more can be used. Among these conductive powders, it is particularly preferable to use Ag which is relatively inexpensive and does not cause a decrease in conductivity due to oxidation even when fired in the air.
The shape of the conductive powder is not particularly limited, such as granular, spherical, or flake shape, and the conductive powder may be used alone or in combination of two or more shapes. Moreover, it is preferable that the average particle diameter of the said electroconductive powder is 0.1-5 micrometers, for example, and can mix and use the electroconductive powder which has a different particle size.
When the average particle size of the conductive powder is less than 0.1 μm, the specific surface area of the conductive powder becomes large, so that the aggregation of particles is likely to occur in the conductive powder-containing resin composition and is stable. It becomes difficult to obtain a distributed state. On the other hand, when the average particle size of the conductive powder is 5 μm or more, particularly 10 μm or more, it is difficult to obtain a high-definition pattern.
Further, the conductive powder-containing resin composition may contain a low melting point glass frit contained in the insulating powder-containing resin composition in addition to the conductive powder described above. By containing the low melting point glass frit, the adhesiveness between the insulating portion and the conductive portion in the obtained laminated pattern becomes more excellent. The content of the low-melting glass frit in the conductive powder-containing resin composition is 50 parts by mass or less, preferably 20 parts by mass or less with respect to 100 parts by mass of the conductive powder.

Examples of the binder resin contained in the conductive powder-containing resin composition include the binder resins exemplified as those constituting the above-described insulating powder-containing resin composition.
In addition, the conductive powder-containing resin composition includes a solvent and an inorganic powder other than those described above, a plasticizer, a development accelerator, an adhesion aid, and a storage stabilizer, as in the above-described insulating powder-containing resin composition. Various additives such as antifoaming agents, antioxidants, ultraviolet absorbers, dispersants, crosslinking agents, photopolymerization initiators, photoacid generators, thermal polymerization initiators, thermal acid generators are included as optional components. May be.
In particular, a fatty acid is preferably used as the dispersant in the conductive powder-containing resin composition. In particular, fatty acids having 8 to 30 carbon atoms are preferred. Preferable specific examples of the fatty acid include octanoic acid, undecyl acid, lauric acid, myristic acid, palmitic acid, pentadecanoic acid, stearic acid, arachidic acid and the like; elaidic acid, oleic acid, linoleic acid, linolenic acid, arachidone Examples thereof include unsaturated fatty acids such as acid and carboxypolycaprolactone (n = 2) monoacrylate, and these can be used alone or in combination of two or more.
The content ratio of the dispersant in the conductive powder-containing resin composition is preferably 5 parts by mass or less, more preferably 3 parts by mass or less with respect to 100 parts by mass of the conductive powder.

The conductive powder-containing resin composition can be prepared in the same manner as the above-described insulating powder-containing resin composition.
The conductive powder-containing resin composition prepared as described above is a paste-like composition having fluidity suitable for coating, and its viscosity is usually 100 to 100,000 cp, preferably 500. -10,000 cp.

[Resist film]
The resist film is obtained by applying a paste-like resist composition containing a resin, a radiation sensitive component and a solvent as essential components, drying the coating film and removing a part or all of the solvent. is there.

  Examples of the resist composition for forming a resist film include an alkali development type radiation sensitive resist composition, an organic solvent development type radiation sensitive resist composition, and an aqueous development type radiation sensitive resist composition. However, preferably an alkali development type radiation sensitive resist composition is used. The “radiation sensitivity” in the present invention includes visible light, ultraviolet light, far ultraviolet light, electron beam, X-ray and the like.

The alkali development resist composition contains an alkali-soluble resin and a radiation-sensitive component as essential components.
Examples of the alkali-soluble resin constituting the alkali developing resist composition include the alkali-soluble resins exemplified as those constituting the binder resin component of the insulating powder-containing resin composition.
The components constituting the alkali developing resist composition include, for example, (a) a combination of a polyfunctional monomer and a photopolymerization initiator, and (b) a photoacid generator that forms an acid upon irradiation with melamine resin. Examples of combinations include (c) compounds in which alkali-insoluble ones become alkali-soluble upon irradiation, and among the combinations of (i) above, a polyfunctional (meth) acrylate and a photopolymerization initiator Combinations are particularly preferred.

  Specific examples of the polyfunctional (meth) acrylate constituting the radiation-sensitive component include di (meth) acrylates of alkylene glycol such as ethylene glycol and propylene glycol; di (meth) acrylate of polyalkylene glycol such as polyethylene glycol and polypropylene glycol ( (Meth) acrylates; di (meth) acrylates of hydroxylated polymers at both ends such as both ends hydroxypolybutadiene, both ends hydroxypolyisoprene, and both ends hydroxypolycaprolactone; glycerin, 1,2,4-butanetriol, trimethylol Poly (meth) acrylates of trihydric or higher polyhydric alcohols such as alkane, tetramethylolalkane, pentaerythritol, dipentaerythritol, etc .; Poly (meth) acrylates of coal adducts; poly (meth) acrylates of cyclic polyols such as 1,4-cyclohexanediol and 1,4-benzenediols; polyester (meth) acrylates, epoxy (meth) acrylates, Examples include oligo (meth) acrylates such as urethane (meth) acrylate, alkyd resin (meth) acrylate, silicone resin (meth) acrylate, and spirane resin (meth) acrylate. These may be used alone or in combination of two or more. Can be used in combination.

Specific examples of the photopolymerization initiator constituting the radiation sensitive component include benzyl, benzoin, benzophenone, camphorquinone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 1-hydroxycyclohexyl phenyl ketone, 2,2-dimethoxy-2-phenylacetophenone, 2-methyl- [4 ′-(methylthio) phenyl] -2-morpholino-1-propanone, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) ) -Butan-1-one and other carbonyl compounds; azoisobutyronitrile, azo compounds such as 4-azidobenzaldehyde, or azide compounds; organosulfur compounds such as mercaptan disulfide; benzoyl peroxide, di-tert-butyl peroxide, tert-Butyl hydro Organic peroxides such as hydrogen peroxide, cumene hydroperoxide, and paraffin hydroperoxide; 1,3-bis (trichloromethyl) -5- (2′-chlorophenyl) -1,3,5-triazine, 2- [2- ( 2-furanyl) ethylenyl] -4,6-bis (trichloromethyl) -1,3,5-triazine and the like; 2,2′-bis (2-chlorophenyl) 4,5,4 ′, 5 ′ − Examples thereof include imidazole dimers such as tetraphenyl 1,2′-biimidazole. These can be used alone or in combination of two or more.
The content ratio of the radiation-sensitive component in the alkali development resist composition is, for example, 1 to 200 parts by weight, preferably 5 to 100 parts by weight, per 100 parts by weight of the alkali-soluble resin.
In addition, the alkali development type radiation sensitive resist composition appropriately contains a solvent in order to impart good film forming properties. As such a solvent, the solvent illustrated as what comprises an insulating powder containing resin composition can be mentioned.
The resist composition used in the present invention includes, as optional components, a development accelerator, an adhesion assistant, an antihalation agent, a storage stabilizer, an antifoaming agent, an antioxidant, an ultraviolet absorber, a filler, a phosphor, a pigment, Various additives such as dyes may be contained.

  In the above transfer film, a protective film can be provided on the surface of the laminated film forming material layer. Examples of the protective film layer include a polyethylene terephthalate film, a polyethylene film, and a polyvinyl alcohol film. Can do.

According to the transfer film as described above, even if the material itself is on a shadow mask substrate having flexibility, it is possible to reliably form a coating film having a large film thickness with excellent film thickness uniformity. Thus, it is possible to reliably prevent the laminated pattern forming material from entering the opening in the shadow mask substrate and degrading the original function of the shadow mask.
In addition, the multilayer film is formed on the shadow mask substrate by a simple operation of transferring each of the multilayer film forming material layers constituting the multilayer film, thereby simplifying the manufacturing process. High productivity can be obtained.

  The shadow mask manufacturing method using the transfer film of the present invention includes: [1] a step of forming a laminated film including an insulating powder-containing resin layer, a conductive powder-containing resin layer, and a resist film by the transfer film; ] Resist film exposure step, [3] resist film development step, [4] conductive powder-containing resin layer and insulating powder-containing resin layer etching step, and [5] conductive powder-containing resin layer and By performing the baking process of the pattern of an insulating powder containing resin layer, the process includes forming a laminated pattern in which an insulating layer and a conductive layer are laminated in this order on a shadow mask substrate.

[1] Formation process of laminated film An example of the formation process of the laminated film is as follows. That is, (a) an insulating powder-containing resin layer for forming an insulating powder-containing resin layer is formed on a shadow mask substrate, and a conductive powder-containing resin layer is formed on the insulating powder-containing resin layer. A laminated film is formed on the shadow mask substrate by performing a step of forming a conductive powder-containing resin layer and (b) a resist film forming step of forming a resist film on the conductive powder-containing resin layer.

Specifically, for example, as shown in FIG. 1A, a laminated body in which a conductive powder-containing resin layer 31 and an insulating powder-containing resin layer 21 are laminated in this order is a support film. Using the transfer film 30 formed on the transfer film 30, the transfer film 30 is overlaid so that the surface of the insulating powder-containing resin layer 21 is in contact with the surface of the shadow mask substrate 11. Is heat-pressed with a heating roller or the like, and the support film 32 is peeled and removed from the conductive powder-containing resin layer 31, so that the laminate becomes the shadow mask substrate 11 as shown in FIG. As a result, the insulating powder-containing resin layer 21 and the conductive powder-containing resin layer 31 are formed on the surface of the shadow mask substrate 11.
Further, as shown in FIG. 1C, a transfer film 40 in which a resist film 41 is formed on a support film 42 is used, and the surface of the resist film 41 in the transfer film 40 contains conductive powder. The transfer film 40 is overlaid so as to be in contact with the surface of the resin layer 31. In this state, the transfer film 40 is thermocompression bonded with a heating roller or the like, and the support film 42 is peeled and removed from the resist film 41. 1 (d), the resist film 41 is transferred and brought into close contact with the surface of the conductive powder-containing resin layer 31, whereby the resist film 41 is transferred to the conductive powder-containing resin layer 31. Formed on top. A laminated film can be formed by forming a resist film on the conductive powder resin layer using a transfer film for forming a resist film.

  In particular, a transfer film in which a laminated film in which a resist film, a conductive powder-containing resin layer, and an insulating powder-containing resin layer are laminated in this order is formed on a support film is used. When a laminated film is formed by batch transfer onto a substrate, it is possible to more easily form a powder-containing resin layer and a resist film with excellent film thickness uniformity, simplifying the process. Can be planned.

  In the above, as the transfer conditions of the laminated film forming material layer in the transfer film, for example, the surface temperature of the heating roller is 40 to 140 ° C., the roll pressure by the heating roller is 0.1 to 10 kg / cm, and the moving speed of the heating roller is Examples are 0.1 to 10 m / min. Further, the shadow mask substrate may be preheated to about 40 to 140 ° C., for example.

[2] Resist Film Exposure Step In this step, as shown in FIG. 2 (e), a light transmission portion MA corresponding to the pattern of openings in the shadow mask substrate 11 is formed on the surface of the resist film 41. A latent image of the resist pattern is formed by selectively irradiating (exposing) radiation such as ultraviolet rays through the exposure mask M.
Here, as the radiation irradiating apparatus, for example, an ultraviolet irradiating apparatus that has been suitably used in the photolithography method or the like, for example, an exposure apparatus that is used when manufacturing semiconductors and liquid crystal display devices can be used. However, it is not particularly limited.

  In addition, after the transfer of the laminated film forming material layer using at least a transfer film formed with a resist film, an exposure treatment with a radiation irradiation apparatus is performed in a state where the support film is not peeled off, and then the support film is peeled off. May be. By performing the exposure process without peeling off the support film, it is possible to prevent the exposure mask M from being soiled, and to prevent a decrease in the curing rate of the binder resin due to oxygen damage during exposure. .

[3] Resist film development process In this process, the resist pattern latent image 45A and the resist removal are removed by developing the latent image of the resist pattern formed by exposure, as shown in FIG. A resist pattern 45 constituted by the portion 45B is formed on the conductive powder-containing resin layer 31.
Here, the development processing conditions are, depending on the type of resist film, the type / composition / concentration of developer, development time, development temperature, development method (for example, dipping method, rocking method, shower method, spray method, paddle method Etc.), a developing device and the like can be selected as appropriate.

[4] Etching Step of Conductive Powder-Containing Resin Layer and Insulating Powder-Containing Resin Layer In this step, the conductive powder-containing resin layer and the insulating powder-containing resin layer are subjected to an etching process, whereby FIG. As shown in (g), a pattern 50 comprising a residual portion 50A of the conductive powder-containing resin layer and a residual portion 50B of the insulating powder-containing resin layer corresponding to the resist pattern 45 is formed on the shadow mask substrate 11. To form.
That is, of the laminate of the conductive powder-containing resin layer 31 and the insulating powder-containing resin layer 21, a portion corresponding to the resist removal portion (non-exposed portion) 45B in the resist film 41 is dissolved in the etching solution and selected. Removed. Then, by continuing the etching process, the surface of the shadow mask substrate 11 is exposed at a portion corresponding to the resist removal portion 45B.
Here, the etching process conditions include the type / composition / concentration of the etchant, the processing time, the processing temperature, the processing depending on the types of constituent materials constituting the insulating powder resin layer and the conductive powder resin layer. A method (for example, an immersion method, a rocking method, a shower method, a spray method, a paddle method), a processing apparatus, or the like can be selected as appropriate.
In the developing step [3], the type of constituent material constituting each of the resist film, the conductive powder-containing resin layer and the insulating powder-containing resin layer is selected based on the physical properties of the constituent material itself. The same solution as the developer used can be used as the etching solution, which makes it possible to continuously perform the development process and the etching process, and to improve the manufacturing efficiency by further simplifying the process. be able to.
Here, the constituent material constituting the resist film is such that the resist residual portion 45A constituting the resist pattern 45 is gradually dissolved during the etching process, and the conductive powder-containing resin layer and the insulating powder relating to the resist removing portion 45B. It is preferable that the body-containing resin layer is completely removed when the predetermined pattern is formed (at the end of the etching process).
Note that even if a part or all of the remaining resist portion remains after the etching process, the remaining resist portion is removed in the next baking step.

[5] Firing step In this step, the conductive powder-containing resin layer and the insulating powder-containing resin layer pattern 50 are collectively baked to obtain a residual portion 50A of the conductive powder-containing resin layer and The organic material in the residual portion 50B of the insulating powder-containing resin layer is burned out. As a result, the insulating layer 61 and the conductive layer 62 are formed on the shadow mask substrate 11 as shown in FIG. A laminated pattern 60 is formed.
Here, the temperature of the baking treatment needs to be a temperature at which the organic substance in the conductive powder-containing resin layer and the insulating powder-containing resin layer is burned out, and is set to 400 to 600 ° C., for example. . The firing time is, for example, 10 to 90 minutes.

  Hereinafter, materials used in the above steps, various conditions, and the like will be described.

<Shadow mask substrate>
The shadow mask substrate has, for example, a metal plate in which a stripe-shaped opening having a width of 10 to 500 μm is formed, or an opening made of a hole having an inner diameter of 0.09 to 0.15 mm of 0.20 to 0.40 mm. A metal plate formed with a dot pitch is used.
In addition, the surface of the shadow mask substrate material is pretreated, for example, by chemical treatment with a silane coupling agent, etc .; plasma treatment; thin film formation treatment by ion plating, sputtering, gas phase reaction, vacuum deposition, etc. May be applied as needed.

<Mask for exposure>
The exposure mask M used in the resist film exposure step [2] has, for example, an exposure pattern (light transmission portion) for forming a laminated pattern on the peripheral portion of the opening in the shadow mask substrate. The portion of the resist film corresponding to the opening in the substrate is shielded from light.

<Developer>
The developer used in the resist film development step can be appropriately selected according to the type of the resist film (resist composition). Specifically, an alkali developer can be used for the resist film made of the alkali development type radiation sensitive resist composition.
As an active ingredient of the alkaline developer, for example, lithium hydroxide, sodium hydroxide, potassium hydroxide, sodium hydrogen phosphate, diammonium hydrogen phosphate, dipotassium hydrogen phosphate, disodium hydrogen phosphate, ammonium dihydrogen phosphate , Inorganic such as potassium dihydrogen phosphate, sodium dihydrogen phosphate, lithium silicate, sodium silicate, potassium silicate, lithium carbonate, sodium carbonate, potassium carbonate, lithium borate, sodium borate, potassium borate, ammonia Alkaline compounds: tetramethylammonium hydroxide, trimethylhydroxyethylammonium hydroxide, monomethylamine, dimethylamine, trimethylamine, monoethylamine, diethylamine, triethylamine, monoisopropylamine, diisopropyl Triethanolamine, and organic alkaline compounds such as ethanol amine.
The alkaline developer used in the resist film development step can be prepared by dissolving one or more of the alkaline compounds in water or the like. Here, the concentration of the alkaline compound in the alkaline developer is, for example, 0.001 to 10% by weight, and preferably 0.01 to 5% by weight. In addition, after the development process with an alkali developer is performed, a washing process is usually performed.

<Etching solution>
The etching solution used in the etching step [4] of the laminate composed of the conductive powder-containing resin layer and the insulating powder-containing resin layer is preferably an alkaline solution. Thereby, the alkali-soluble resin contained in the residual part of the conductive powder-containing resin layer and the residual part of the insulating powder-containing resin layer can be easily dissolved and removed.
The insulating powder contained in the insulating powder-containing resin layer and the conductive powder contained in the conductive powder-containing resin layer are uniformly dispersed by the alkali-soluble resin. The alkali-soluble resin, which is an organic binder, is dissolved and washed at the same time.
Here, the alkaline solution used as the etching solution is more preferably a solution having the same composition as the developer. Since the etching solution is the same solution as the alkaline developer used in the development process, the development process and the etching process can be performed continuously, and the process can be further simplified.
For example, after an etching process using an alkaline solution, a washing process is usually performed.

  According to the shadow mask manufacturing method using the transfer film of the present invention as described above, a laminated film is formed on the shadow mask substrate by transferring each of the laminated film forming material layers formed by, for example, a roll coater. As a result, the formed laminated film has excellent film thickness uniformity, and the laminated pattern forming material does not enter the opening in the shadow mask substrate. Therefore, a laminated pattern composed of an insulating layer and a conductive layer is formed on a shadow mask substrate with high dimensional accuracy without deteriorating the original function of the shadow mask and without causing defects such as pinholes. In addition to being able to produce, the desired shadow mask for cathode ray tubes can be manufactured with high productivity.

Examples of the present invention will be described below, but the present invention is not limited to these examples. In the following, “part” means “part by mass”.
Further, “Mw” is a weight average molecular weight in terms of polystyrene measured by Tosoh Corporation gel permeation chromatography (GPC) (trade name HLC-802A).

<Example 1>
(1) Preparation of insulating powder-containing resin composition:
As insulating powder (a), 50 parts of Bi ₂ O ₃ —B ₂ O ₃ —SiO ₂ low melting point glass frit (softening point 560 ° C.) having an average particle diameter of 3 μm, alumina powder having an average particle diameter of 1 μm (inorganic oxidation) Product filler) 50 parts, binder resin (b) as 2-ethylhexyl methacrylate / 3-hydroxypropyl methacrylate / methacrylic acid / mono- (2-methacryloyloxyethyl) succinate = 60/20/20/20 ( 15% by weight) copolymer (Mw = 50,000), as other optional components, 1 part of n-decyltrimethoxysilane, 5 parts of di-2-ethylhexyl azelate, and propylene glycol monomethyl ether as solvent (c) After kneading 50 parts with a bead mill, insulating by filtering with stainless mesh (500 mesh, 25 μm diameter) The body-containing resin composition was prepared.

(2) Preparation of conductive powder-containing resin composition:
100 parts of Ag powder having an average particle diameter of 2 μm as the conductive powder, Bi ₂ O ₃ —B ₂ O ₃ —SiO ₂ low melting point glass frit having an average particle diameter of 3 μm as the low melting glass frit (indefinite shape, softening point) 560 ° C.) 10 parts, as binder resin, 2-ethylhexyl methacrylate / 3-hydroxypropyl methacrylate / methacrylic acid / mono (2-methacryloyloxyethyl) succinate = 60/20/20/20 (mass%) After kneading 15 parts of a copolymer (Mw = 50,000), 1 part of oleic acid, 5 parts of di-2-ethylhexyl azelate, and 50 parts of propylene glycol monomethyl ether as a solvent in a bead mill, Conductive powder-containing resin composition is prepared by filtering with stainless mesh (500 mesh, 25μm diameter) It was.

(3) Preparation of resist composition (alkali development type radiation sensitive resist composition):
Benzyl methacrylate / methacrylic acid = 75/25 (wt%) copolymer (Mw = 30,000) 60 parts as alkali-soluble resin, 40 parts tripropylene glycol diacrylate as polyfunctional monomer (radiation sensitive component), Kneading 5 parts 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butan-1-one as a photopolymerization initiator (radiation sensitive component) and 100 parts propylene glycol monomethyl ether acetate as a solvent Then, an alkali development type radiation sensitive resist composition (hereinafter referred to as “resist composition”) was prepared by filtering with a cartridge filter (2 μm diameter).

(4) Production of transfer film:
By the operations of the following steps (a), (b) and (c), a laminated film in which a resist film, a conductive powder-containing resin layer and an insulating powder-containing resin layer are laminated in this order is formed on the support film. A transfer film of the present invention was prepared.
Step (a): The resist composition prepared in (3) above was applied onto a support film made of a PET film having a thickness of 38 μm using a blade coater, and the coating film was dried at 100 ° C. for 3 minutes to remove the solvent. Then, a resist film having a thickness of 8 μm was formed on the support film.
Step (b): The conductive powder-containing resin composition prepared in (2) above was applied onto the resist film prepared in step (a) using a blade coater, and the coating film was dried at 100 ° C. for 5 minutes. Then, the solvent was removed, and a conductive powder-containing resin layer having a thickness of 10 μm was formed on the resist film.
Step (c): On the conductive powder-containing resin layer prepared in step (b), the insulating powder-containing resin composition prepared in the above (1) was applied using a blade coater, and the coating film was applied to 100. The solvent was removed by drying at 5 ° C. for 5 minutes, and an insulating powder-containing resin layer having a thickness of 30 μm was formed on the conductive powder-containing resin layer.

(5) Transfer process of laminated film:
A transfer film produced in the above step (4) on the surface of a metal shadow mask substrate having a thickness of 0.25 mm, having stripe-shaped openings in which the distance between adjacent openings is 200 μm. The transfer film was laminated so that the surface of the insulating powder-containing resin layer was in contact, and this transfer film was thermocompression bonded to a heating roller. Here, as the pressure bonding conditions, the surface temperature of the heating roller was 100 ° C., the roll pressure was 2.5 kg / cm, and the moving speed of the heating roller was 0.5 m / min. Thereby, the laminated film formed by laminating the insulating powder-containing resin layer, the conductive powder-containing resin layer, and the resist film was transferred to and closely adhered to the surface of the shadow mask substrate.

(6) Exposure process / development process of resist film:
With respect to the resist film constituting the laminated film formed on the shadow mask substrate in the above step (5), an ultrahigh pressure is applied from the support film through an exposure mask (light transmission part in a stripe pattern having a width of 200 μm). Irradiation with i-line (ultraviolet light having a wavelength of 365 nm) was performed with an irradiation energy of 400 mJ / cm ² using a mercury lamp. The support film on the resist film is peeled off, and then the resist film is developed by a shower method using a 0.5% by mass aqueous sodium carbonate solution (30 ° C.) as a developing solution for the exposed resist film. For a second.
Thereby, the uncured resist that was not irradiated with ultraviolet rays was removed to form a resist pattern.

(7) Etching process of conductive powder-containing resin layer and insulating powder-containing resin layer:
Continuing to the above step (6), the conductive powder-containing resin layer and the insulating powder-containing resin layer are etched by a shower method using a 0.5 mass% sodium carbonate aqueous solution (30 ° C.) as an etchant. For 60 seconds.
Next, washing with ultrapure water and a drying treatment were performed. As a result, a pattern composed of the powder-containing resin layer residual portion (residual portion of the laminate of the conductive powder-containing resin layer and the insulating powder-containing resin layer) and the powder-containing resin layer removal portion is formed. did.

(8) Pattern firing step:
The shadow mask on which the pattern composed of the insulating powder-containing resin layer and the conductive powder-containing resin layer was formed was baked at 590 ° C. for 30 minutes in an atmosphere in a baking furnace. As a result, a laminated pattern in which the insulating layer and the conductive layer were laminated in this order on the surface of the shadow mask was formed.

(9) Performance evaluation of laminated pattern:
When the obtained laminated pattern was observed with a scanning electron microscope, the pattern height was within 30 ± 2 μm and the line width was 200 ± 5 μm, and it was confirmed that the desired laminated pattern could be formed with high accuracy. It was done.
In addition, the residue of the powder-containing resin layer was not observed on the surface and the opening of the shadow mask substrate, and the laminated pattern was not defective or missing.

It is sectional drawing which shows an example of the formation process (formation process of a laminated film) of the lamination pattern in the manufacturing method of the shadow mask using the transfer film of this invention. It is sectional drawing which shows an example of the formation process (exposure process, image development process, etching process, baking process) of the lamination pattern in the manufacturing method of the shadow mask using the transfer film of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 Shadow mask board | substrate 21 Insulating powder containing resin layer 30 Transfer film 31 Conductive powder containing resin layer 32 Support film 40 Transfer film 41 Resist film 42 Support film M Exposure mask MA Light transmission part 45 Resist pattern 45A Resist residual part 45B Resist removal part 50 Pattern 50A Residual part of conductive powder-containing resin layer 50B Residual part of insulating powder-containing resin layer 60 Laminate pattern 61 Insulating layer 62 Conductive layer

Claims (5)

  A transfer film for forming a shadow mask, wherein a laminated film including a conductive powder-containing resin layer and an insulating powder-containing resin layer is formed on a support film.   The transfer film for forming a shadow mask according to claim 1, wherein a laminated film including a resist film, a conductive powder-containing resin layer and an insulating powder-containing resin layer is formed on a support film.   The transfer film for forming a shadow mask according to claim 1 or 2, wherein the conductive powder contained in the conductive powder-containing resin layer is a silver powder.   The transfer film for forming a shadow mask according to any one of claims 1 to 3, wherein the insulating powder contained in the insulating powder-containing resin layer is a low-melting glass frit. The transfer film for forming a shadow mask according to claim 4, wherein the insulating powder contained in the insulating powder-containing resin layer contains an inorganic oxide filler.

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