JP2005062888A - 透明な電気デバイスのための光学特性の正規化 - Google Patents
透明な電気デバイスのための光学特性の正規化 Download PDFInfo
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- JP2005062888A JP2005062888A JP2004237023A JP2004237023A JP2005062888A JP 2005062888 A JP2005062888 A JP 2005062888A JP 2004237023 A JP2004237023 A JP 2004237023A JP 2004237023 A JP2004237023 A JP 2004237023A JP 2005062888 A JP2005062888 A JP 2005062888A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 90
- 238000010606 normalization Methods 0.000 title claims abstract description 71
- 230000003595 spectral effect Effects 0.000 claims abstract description 64
- 230000005540 biological transmission Effects 0.000 claims description 43
- 238000010521 absorption reaction Methods 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000002834 transmittance Methods 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 28
- 238000010586 diagram Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 239000012780 transparent material Substances 0.000 description 14
- 235000012239 silicon dioxide Nutrition 0.000 description 13
- 239000000377 silicon dioxide Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 7
- 238000001429 visible spectrum Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910016569 AlF 3 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133502—Antiglare, refractive index matching layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
Abstract
【解決手段】 それぞれ可視光に対して概ね透過性である複数の横方向に変位した領域(102、104)を含む電気デバイス(100)であって、前記領域(102、104)はそれぞれ、互いに対して概ね同じである正規化された値の光学特性を有する正規化された表面(112、114)を含み、一方の前記領域(102)は電気部品(106)の一部を含み、少なくとも一方の前記領域(102)は該少なくとも一方の領域(102)の前記正規化された表面(114)の下に、前記正規化された値と概ね同じではない光学特性に対する値を有する、さらに別の表面(110)と、該少なくとも一方の領域(102)の前記正規化された表面(114)が前記正規化された値を示すように、前記さらに別の表面(110)とともに配置されるスペクトル正規化構造(108)とを備える。
【選択図】 図1
Description
本発明の一実施形態では、電気デバイスは、ある光学特性に対して概ね一様な値を示し、可視光に対して概ね透過性の露出された表面を含む。複数の薄膜スタックが半導体基板と露出された表面との間に配置される。複数の薄膜スタックは互いに横方向に変位する。複数の薄膜スタックの各スタックは、少なくとも1つの他の上側表面の光学特性に対する値とは異なる、その光学特性に対する値を示す上側表面を有する。
1/(IO−R)=e-αL
先に述べられたように、第1の領域102は電気部品106の一部を含む。電気部品106の一部は第1の値の光学特性(この実施形態では吸収である)を有する第1の表面110を有する。第1の値は第2の領域の第2の表面112の吸収に対する第2の値とは異なる。吸収が異なる結果として、第1および第2の領域102、104が互いに対して見分けることができるようになる。第1の領域102の第1の表面110の吸収を第2の領域104の第2の表面112の吸収と正規化するために、スペクトル正規化構造108が用いられる。スペクトル正規化構造108は、電気部品106の一部とともに配置される。スペクトル正規化構造108は電気部品106の一部の上に配置されるように示されるが、スペクトル正規化構造108は電気部品106の一部の下や、電気部品106の一部の層間(ここには図示せず)などに配置されることもできる。
102 領域
104 領域
106 電気部品
108 スペクトル正規化構造
110 表面
112 正規化された表面
114 正規化された表面
200 デイスプレイ装置
204 光源
206 ハウジング
208 デバイス
210 光
212 光
300 電気デバイス
314 基板
Claims (10)
- それぞれ可視光に対して概ね透過性である複数の横方向に変位した領域を含む電気デバイスであって、
前記領域はそれぞれ、互いに対して概ね同じである正規化された値の光学特性を有する正規化された表面を含み、
一方の前記領域は電気部品の一部を含み、
少なくとも一方の前記領域は該少なくとも一方の領域の前記正規化された表面の下に、
前記正規化された値と概ね同じではない光学特性に対する値を有する、さらに別の表面と、
該少なくとも一方の領域の前記正規化された表面が前記正規化された値を示すように、前記さらに別の表面とともに配置されるスペクトル正規化構造とを有する、電気デバイス。 - 前記スペクトル正規化構造を含む前記少なくとも一方の領域は前記電気部品の一部も含む請求項1に記載の電気デバイス。
- 前記可視光は約400nmないし約700nmの波長範囲に含まれる請求項1に記載の電気デバイス。
- 前記複数の領域は人の目によって視認される際に概ね一様な色を有する請求項1に記載の電気デバイス。
- 前記光学特性は、
透過と、
反射と、
吸収とからなるグループから選択される請求項1に記載の電気デバイス。 - 前記電気部品は半導体デバイスであり、
前記複数の横方向に変位した領域は基板上に配置される請求項1に記載の電気デバイス。 - 前記正規化された表面はそれぞれ丸みを帯びたエッジを有する請求項1に記載の電気デバイス。
- 前記領域のそれぞれの前記正規化された値が、前記光学特性の値を示す第1の軸と、可視光の波長を示す第2の軸とを有するグラフ上にプロットされるとき、前記領域のそれぞれの前記正規化された値は、可視光の波長の大部分にわたって概ね同じである請求項1に記載の電気デバイス。
- 前記複数の領域は人の目によって、互いに対して概ね見分けることができない請求項1に記載の電気デバイス。
- 前記領域はそれぞれ薄膜スタックとして構成される請求項1に記載の電気デバイス。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/643,571 US6940097B2 (en) | 2003-08-19 | 2003-08-19 | Optical property normalization for a transparent electrical device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005062888A true JP2005062888A (ja) | 2005-03-10 |
JP4359540B2 JP4359540B2 (ja) | 2009-11-04 |
Family
ID=34063463
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004237023A Active JP4359540B2 (ja) | 2003-08-19 | 2004-08-17 | ディスプレイ装置 |
Country Status (6)
Country | Link |
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US (2) | US6940097B2 (ja) |
EP (1) | EP1508832A1 (ja) |
JP (1) | JP4359540B2 (ja) |
KR (1) | KR101024132B1 (ja) |
CN (1) | CN100466019C (ja) |
TW (1) | TWI366013B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7382421B2 (en) * | 2004-10-12 | 2008-06-03 | Hewlett-Packard Development Company, L.P. | Thin film transistor with a passivation layer |
US7821613B2 (en) | 2005-12-28 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5150232A (en) * | 1988-10-04 | 1992-09-22 | Asahi Glass Company Ltd. | Active matrix liquid crystal display element and projection type active matrix liquid crystal display device |
EP0808071B1 (en) | 1991-03-19 | 2000-12-06 | Hitachi, Ltd. | Liquid crystal display apparatus |
US5777700A (en) * | 1993-07-14 | 1998-07-07 | Nec Corporation | Liquid crystal display with improved viewing angle dependence |
JP2842216B2 (ja) * | 1994-03-31 | 1998-12-24 | 株式会社デンソー | 電極付き基板とその製造方法 |
TW295652B (ja) | 1994-10-24 | 1997-01-11 | Handotai Energy Kenkyusho Kk | |
JP3647523B2 (ja) | 1995-10-14 | 2005-05-11 | 株式会社半導体エネルギー研究所 | マトリクス型液晶表示装置 |
IT1306222B1 (it) * | 1996-12-09 | 2001-06-04 | Sideral Srl | Sistema di protezione e d'allarme anti-intrusione per ville, edificiper abitazione e lavoro, mediante apparecchi video in genere |
JPH11243204A (ja) * | 1998-02-25 | 1999-09-07 | Matsushita Electric Ind Co Ltd | アクティブマトリックス基板及びその液晶表示装置 |
US6489642B1 (en) * | 2000-09-28 | 2002-12-03 | Eastman Kodak Company | Image sensor having improved spectral response uniformity |
JP3841198B2 (ja) * | 2001-03-13 | 2006-11-01 | 日本電気株式会社 | アクティブマトリクス基板及びその製造方法 |
CA2364201A1 (en) * | 2001-12-03 | 2003-06-03 | Luxell Technologies, Inc. | Optical interference member for matrix displays |
JP2003179233A (ja) * | 2001-12-13 | 2003-06-27 | Fuji Xerox Co Ltd | 薄膜トランジスタ、及びそれを備えた表示素子 |
US6924472B2 (en) * | 2002-11-12 | 2005-08-02 | Eastman Kodak Company | Image sensor with improved optical response uniformity |
-
2003
- 2003-08-19 US US10/643,571 patent/US6940097B2/en not_active Expired - Lifetime
-
2004
- 2004-03-30 TW TW093108696A patent/TWI366013B/zh active
- 2004-06-21 CN CNB2004100694023A patent/CN100466019C/zh active Active
- 2004-06-22 KR KR1020040046469A patent/KR101024132B1/ko active IP Right Grant
- 2004-08-05 EP EP04254704A patent/EP1508832A1/en not_active Ceased
- 2004-08-17 JP JP2004237023A patent/JP4359540B2/ja active Active
-
2005
- 2005-06-02 US US11/145,484 patent/US7227182B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN100466019C (zh) | 2009-03-04 |
US20050224804A1 (en) | 2005-10-13 |
US6940097B2 (en) | 2005-09-06 |
CN1584954A (zh) | 2005-02-23 |
US20050043013A1 (en) | 2005-02-24 |
TW200510837A (en) | 2005-03-16 |
JP4359540B2 (ja) | 2009-11-04 |
US7227182B2 (en) | 2007-06-05 |
KR101024132B1 (ko) | 2011-03-22 |
TWI366013B (en) | 2012-06-11 |
KR20050020585A (ko) | 2005-03-04 |
EP1508832A1 (en) | 2005-02-23 |
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