JP2005057188A - Semiconductor laser device, integrated optical pickup, and optical disc - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To make laser beams emitted from two kinds of semiconductor laser chips come close with respect to their positions for sharing an optical system for DVD and CD by integrating the two semiconductor laser chips, which emit the laser beams of different wavelengths. <P>SOLUTION: A plurality of semiconductor laser chips 3, 4, which emit the beams of different wavelengths, are mounted on the surface of a supporting body 2 with their light emitting points 3a, 4a in face to face with each other, while a hole 6 is so formed in the supporting body 2 as to be positioned between the semiconductor laser chips 3, 4, which are positioned in face to face with each other. A reflector 5 having two reflecting planes 5a that reflect laser beams emitted from the semiconductor laser chips 3, 4 is mounted in the hole 6 such that the reflecting planes 5a are set at 45° with respect to the surface of the supporting body 2. The laser beams emitted respectively from the semiconductor laser chips 3, 4 advance with their positions closer after they are reflected by the reflecting planes 5a of the reflector 5. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a semiconductor laser device, an integrated optical pickup, and an optical disk device.

  In recent years, DVD has been attracting attention as a next-generation optical disc, and a player capable of reproducing or reproducing and writing to DVD has a function capable of reproducing or reproducing and writing on CD. It is desirable to have both. For this purpose, there is a need for an optical pickup on which a short wavelength (635 nm or 650 nm) red semiconductor laser chip for DVD and a long wavelength (780 nm) near infrared semiconductor laser chip for CD are mounted. Furthermore, in order to reduce the size of the apparatus, it is expected to realize an integrated optical pickup in which two types of semiconductor laser chips are incorporated in one package.

  However, in order to integrate two semiconductor laser chips into one package and to share an optical system, it is necessary to make the intervals between the light emitting points of the two semiconductor laser chips as close as possible, and the interval is 300 μm or less, preferably 100 μm. Must be:

  Conventionally, the invention disclosed in Patent Document 1 is known as an invention of a semiconductor laser device in which the interval between light emitting points of two semiconductor laser chips is narrowed. The invention disclosed in Patent Document 1 is shown in FIG. In the present invention, the light emitting points 103 and 104 of the two semiconductor laser chips 101 and 102 that emit laser beams having different wavelengths are formed at positions deviated toward the ends. 104 are arranged so as to be close to each other.

  As another semiconductor laser device in which the interval between the light emitting points of two semiconductor laser chips is narrowed, the invention disclosed in Patent Document 2 is known. The invention disclosed in Patent Document 2 is shown in FIG. In the present invention, two semiconductor laser chips 111 and 112 that emit laser beams having different wavelengths are provided on a support 113, and a mirror 114 having a triangular cross section is formed between the semiconductor laser chips 111 and 112. ing. The support 113 is formed of silicon, and the mirror 114 is formed by anisotropically etching the support 113. Laser light emitted from the semiconductor laser chips 111 and 112 is reflected by the reflecting surface of the mirror 114 and travels as parallel light positioned in the vicinity.

Japanese Patent Laid-Open No. 11-112089

JP 11-39684 A

  In the invention disclosed in Patent Document 1 shown in FIG. 13, since the two semiconductor laser chips 101 and 102 need to be spaced at least about 30 μm, the distance between the light emitting points 103 and 104 is about 100 μm. In this case, it is necessary to form the light emitting points 103 and 104 at a position of about 35 μm from the outer edge of the semiconductor laser chips 101 and 102. However, since the positions of the light emitting points 103 and 104 are too close to the outer edge of the chip, the light emitting points 103 and 104 are damaged when chipping occurs in the chip separation process, and the yield is reduced.

  In the invention disclosed in Patent Document 2 shown in FIG. 14, it is actually difficult to form a mirror 114 having a triangular cross section with a 45 ° slope by anisotropic etching on the silicon surface, which is not practical. .

  As described above, it is difficult to realize a semiconductor laser device in which two types of semiconductor laser chips having different wavelengths for use as both DVD and CD optical systems are integrated, and an optical pickup including the semiconductor laser device.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor laser device in which two types of semiconductor laser chips having different wavelengths for use in DVD and CD optical systems are integrated, and an integrated optical pickup including the semiconductor laser device. It is.

  According to a first aspect of the present invention, there is provided a semiconductor laser device comprising: a plurality of semiconductor lasers arranged on the surface of the support so that the support and a surface having a laser light emitting point are opposed to each other and emitting laser beams of different wavelengths A hole formed in the support body positioned between the chip and the semiconductor laser chip disposed opposite to the chip, and two reflecting surfaces for reflecting the laser light emitted from the semiconductor laser chip, And a reflector mounted in the hole such that the reflection surface is 45 ° with respect to the surface of the support.

  Therefore, laser beams having different wavelengths emitted from the light emitting points of the respective semiconductor laser chips are reflected by the reflecting surface of the reflector and travel in a direction perpendicular to the surface of the support. By optimizing the relative positional relationship between the reflector and the semiconductor laser chip, it is possible to set an interval between laser beams having different wavelengths that are reflected by the reflecting surface of the reflector and travel to an arbitrarily narrow interval.

  According to a second aspect of the present invention, in the semiconductor laser device according to the first aspect, the reflector is formed in a quadrangular prism shape with a material mainly composed of silicon.

  Therefore, a reflector having a reflective surface with excellent flatness can be manufactured by using a silicon surface for one reflective surface and an etched surface for the other reflective surface.

  According to a third aspect of the present invention, in the semiconductor laser device according to the first or second aspect, the support and the reflector are made of a material mainly composed of silicon.

  Therefore, since both the support and the reflector are made of a material mainly composed of silicon, the thermal stress is suppressed even when the environmental temperature changes because the thermal expansion coefficients of the support and the reflector are close. And the accuracy of attaching the reflector to the support is maintained.

  According to a fourth aspect of the present invention, in the semiconductor laser device according to any one of the first to third aspects, the inner peripheral surface of the hole is an inclined surface inclined at an angle of 45 ° with respect to the surface of the support. Is formed.

  Therefore, when the rectangular prismatic reflector is mounted in the hole, the reflecting surface of the reflector is brought into contact with the inclined surface of the hole so that the reflecting surface of the reflector is 45 ° with respect to the surface of the support. The angle is maintained with high accuracy.

  According to a fifth aspect of the present invention, in the semiconductor laser device according to the fourth aspect, the portion of the inclined surface of the hole is formed by grinding with a diamond blade having a cross-sectional shape of 90 °.

  Therefore, a hole having an accurate cross-sectional shape can be easily formed.

  According to a sixth aspect of the present invention, in the semiconductor laser device according to the fourth aspect, the inclined surface portion of the hole is formed by anisotropic etching.

  Therefore, a hole having an accurate cross-sectional shape can be easily formed.

  According to a seventh aspect of the present invention, in the semiconductor laser device according to any one of the first to third aspects, a stepped surface is formed on the inner peripheral surface of the hole, and a line connecting the tips of the stepped portions of the stepped surface. Is inclined at an angle of 45 ° with respect to the surface of the support.

  Therefore, when a rectangular prismatic reflector is mounted in the hole, the reflecting surface, which is the outer peripheral surface of the reflector, is brought into contact with the tip of the stepped portion of the stepped surface of the hole so that the reflecting surface of the reflector becomes the surface of the support. With respect to the angle, the angle of 45 ° is maintained with high accuracy.

  According to an eighth aspect of the present invention, in the semiconductor laser device according to any one of the first to seventh aspects, a light receiving portion for detecting a light output from the semiconductor laser chip is provided on the support.

  Therefore, the semiconductor laser chip and the light receiving unit that detects the light output from the semiconductor laser chip can be integrated to achieve miniaturization.

  An integrated optical pickup according to a ninth aspect of the invention is a semiconductor laser device according to any one of the first to eighth aspects, an objective lens for condensing the laser light emitted from the semiconductor laser chip on an optical disc, A light receiving element that receives reflected light from the optical disk, and a hologram element that bends the reflected light from the optical disk toward the light receiving element.

  Therefore, since a plurality of semiconductor laser chips corresponding to a plurality of types of optical disks are integrated, the integrated optical pickup can be miniaturized.

  An optical disc device according to a tenth aspect of the present invention is a rotary drive mechanism for rotating an optical disc, an integrated optical pickup according to a ninth aspect, and a laser beam emitted from the integrated optical pickup according to the type of the optical disc. Selective emission means for selecting the type.

  Therefore, by mounting a small integrated optical pickup on the optical disk apparatus, the optical disk apparatus can be reduced in size.

  According to the semiconductor laser device of the first aspect of the present invention, by optimizing the relative positional relationship between the reflector and the semiconductor laser chip, the interval between the laser beams having different wavelengths traveling by being reflected by the reflecting surface of the reflector is different. Can be set to any narrow spacing.

  According to a second aspect of the present invention, in the semiconductor laser device according to the first aspect, the reflector is formed in a quadrangular prism shape with a material having silicon as a main component. By using an etched surface as the other reflecting surface, a reflector having a reflecting surface with excellent flatness can be produced.

  According to a third aspect of the present invention, in the semiconductor laser device according to the first or second aspect, the support and the reflector are made of a material mainly composed of silicon. Since the thermal expansion coefficient with the body is close, thermal stress can be suppressed even when the environmental temperature changes, and the accuracy of attaching the reflector to the support can be maintained.

  According to a fourth aspect of the present invention, in the semiconductor laser device according to any one of the first to third aspects, the inner peripheral surface of the hole is inclined at an angle of 45 ° with respect to the surface of the support. Since the inclined surface is formed, when the rectangular prismatic reflector is mounted in the hole, the reflecting surface, which is the outer peripheral surface of the reflector, is brought into contact with the inclined surface of the hole so that the reflecting surface of the reflector becomes the support. Can be maintained with high accuracy so as to be at an angle of 45 ° with respect to the surface.

  According to the invention of claim 5, in the semiconductor laser device of claim 4, the inclined surface portion of the hole is formed by grinding with a diamond blade having a cross-sectional shape of 90 °. A hole having a cross-sectional shape can be easily formed.

  According to a sixth aspect of the present invention, in the semiconductor laser device of the fourth aspect, since the inclined surface portion of the hole is formed by anisotropic etching, a hole having an accurate sectional shape can be easily formed. Can be formed.

  According to a seventh aspect of the present invention, in the semiconductor laser device according to any one of the first to third aspects, a stepped surface is formed on the inner peripheral surface of the hole, and the tip of the stepped portion of the stepped surface is formed. Since the connecting line is inclined at an angle of 45 ° with respect to the surface of the support, when the rectangular prismatic reflector is mounted in the hole, the reflection surface, which is the outer peripheral surface of the reflector, is stepped on the stepped surface of the hole. By abutting on the tip of the part, the reflecting surface of the reflector can be maintained with high accuracy so that the angle of the reflection surface is 45 ° with respect to the surface of the support.

  According to an eighth aspect of the present invention, in the semiconductor laser device according to any one of the first to seventh aspects, a light receiving portion for detecting a light output from the semiconductor laser chip is provided on the support. The semiconductor laser chip and the light receiving unit for detecting the light output from the semiconductor laser chip can be integrated to achieve miniaturization.

  According to the integrated optical pickup of the ninth aspect of the invention, since a plurality of semiconductor laser chips corresponding to a plurality of types of optical disks are integrated, the integrated optical pickup can be miniaturized.

  According to the optical disk device of the invention described in claim 10, it is possible to reduce the size by mounting a small integrated optical pickup.

  A first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a front view showing a semiconductor laser device, and FIG. 2 is a plan view thereof.

  The semiconductor laser device 1 is formed of a support 2, two semiconductor laser chips 3 and 4, and a reflector 5 as main components.

  The support 2 is a plate-like member using silicon that is excellent in heat dissipation, and semiconductor laser chips 3 and 4 are mounted on the surface thereof. A hole 6 is formed in the support 2 between the mounted semiconductor laser chips 3 and 4, and a reflector 5 is mounted in the hole 6.

  The semiconductor laser chips 3 and 4 emit laser beams B1 and B2 having different wavelengths. The semiconductor laser chip 3 emits laser light B1 having a short wavelength (635 nm or 650 nm) for DVD. Emits a laser beam B2 having a long wavelength (780 nm) for CD. The semiconductor laser chips 3 and 4 are mounted with the light emitting points 3a and 4a from which the laser beams B1 and B2 are emitted facing each other.

  The hole 6 formed in the support body 2 is formed so as to penetrate the front surface side and the back surface side of the support body 2, and the cross-sectional shape thereof is an inverted Y shape with a narrow front surface side. An inclined surface 6 a that is inclined at an angle of 45 ° with respect to the surface of the support 2 is formed on the inner peripheral surface of the hole 6.

  The reflector 5 is made of silicon and is formed in a quadrangular prism shape with a side of 200 μm, and two of the four surrounding surfaces are reflective surfaces 5a. The reflector 5 is inserted into the hole 6 from the back side of the support 2 and is fixedly bonded. In the reflector 5 inserted into the hole 6, the reflecting surface 5 a is in contact with the inclined surface 6 a, and a part of the reflecting surface 5 a is exposed to the surface side of the support 2. The light emitting points 3a and 4a from which the laser beams B1 and B2 are emitted are opposed to the portion of the reflecting surface 5a exposed on the surface side of the support 2.

  The process of forming the hole 6 will be described with reference to FIG. A recess 6b is formed by etching from the surface side of the support 2 (FIG. 4A). Next, a diamond blade 7 having a tip section of 90 ° is ground from the back surface side of the support 2 toward the recess 6b to complete the inverted Y-shaped hole 6 (FIG. 4B). (C)).

  The reflector 5 is formed in a quadrangular prism shape having a side of 200 μm using silicon, and such a microstructure is manufactured by using an anisotropic etching technique of silicon. Silicon as a semiconductor material has anisotropy in which etching proceeds in a specific crystal orientation in a specific etching solution. Such etching is known as anisotropic etching. In the reflector 5 of the present invention, the silicon surface can be used as the first reflecting surface, and the vertical etching surface by anisotropic etching can be used as the second reflecting surface. Specifically, it can be formed by anisotropically etching a (110) plane silicon substrate.

The manufacturing process of the reflector 5 will be described with reference to FIG. As the substrate 8 on which the reflector 5 is formed, a (110) plane silicon substrate is employed. The substrate 8 is anisotropically etched using a mask to form an opening 9 having a predetermined width (FIG. 5A). A silicon oxide film or a silicon nitride film is used as a mask material, and 23.4 wt% KOH, 13.3 wt% isopropyl alcohol, and 63.3 wt% H ₂ O are used as an etchant. As shown in FIG. 5A, the substrate 8 has a strip shape which is vertically etched at a predetermined interval.

  Thereafter, the mask is removed, about 0.01 μm of titanium is vapor-deposited on the surface to be the reflective surface, and gold of 0.1 μm or more is further vapor-deposited. At this time, titanium and gold are vapor-deposited at an angle of 45 ° onto the surface 8a which was the surface of the silicon substrate 8 and the surface 8b formed by etching (FIG. 5B). Finally, as shown in FIG. 5 (c), an opening 9 is formed, and a reflector 8 having reflective surfaces 5a on two surfaces is obtained by cutting a substrate 8 on which titanium and gold are deposited to a predetermined length. It is formed.

  As a result of evaluating the flatness of the reflecting surface 5a formed on the surface 8b obtained by anisotropic etching in this way and the flatness of the reflecting surface 5a formed on the surface 8a on the surface side of the substrate 8 There was almost no difference.

  The reflecting surface 5a is attached to the support 2 by attaching the reflecting member 5 having a square columnar shape to the hole 6 and bringing the reflecting surface 5a into contact with the inclined surface 6a inclined at an angle of 45 ° with respect to the surface of the supporting member 2. It is fixed at an angle of 45 ° with respect to the surface.

  In the semiconductor laser device 1 configured as described above, the laser beams B1 and B2 emitted from the light emitting points 3a and 4a of the semiconductor laser chips 3 and 4 strike the reflecting surface 5a of the reflector 5 and are reflected. Progress in a direction perpendicular to the surface. At this time, by optimizing the relative positional relationship between the reflector 5 and the semiconductor laser chips 3 and 4, for example, by adjusting the exposed dimension of the reflecting surface 5a exposed to the surface side of the support 2, the support The interval between the laser beams B1 and B2 traveling in the vertical direction from the surface 2 can be set to an arbitrary interval.

  The distance between the laser beams B1 and B2 that travel in the vertical direction from the surface of the support 2 after being reflected by the reflecting surface 5a, the dimensions of the holes 6, the reflector 5, and the like will be described in detail with reference to FIG. The distance d0 between the two laser beams B1 and B2 to be extracted is 100 μm, the length L of one side of the four surfaces around the reflector 5 is 200 μm, the light emitting points 3a and 4a and the reflecting surface 5a of the semiconductor laser chips 3 and 4 The distance d1 is 50 μm, the protruding amount d2 from the end of the support 2 when the semiconductor laser chips 3 and 4 are mounted is 5 μm, and from the surface of the support 2 to the light emitting points 3a and 4a of the semiconductor laser chips 3 and 4 When the height t0 is 5 μm, the distance d3 between the semiconductor laser chips 3 and 4 is 200 μm, the opening distance d4 on the surface side of the support 2 in the hole 6 is 210 μm (d0 + 2d1 + 2d2), and the thickness of the hole 6 on the surface opening side. The length t1 is 50 μm (d4 / 2−d0 / 2−t0). The thickness of the support 2 needs to be a thickness t0 at which the support 2 does not protrude from the hole 6 to the back surface side, and is approximately √2 × L or more, for example, about 350 μm, and the opening width d5 on the back surface side is also the reflector 5. √2 × L, for example, about 300 μm.

  A second embodiment of the present invention will be described with reference to FIGS. The same parts as those described in FIGS. 1 to 5 are denoted by the same reference numerals, and description thereof is also omitted (the same applies to the following embodiments). FIG. 6 is a front view showing the semiconductor laser device, and FIG. 7 is a plan view thereof.

  In the present embodiment, a stepped surface 11 is formed on the inner peripheral surface of the hole 6 formed in the support 2. The stepped surface 11 is formed so that the line connecting the tips of the stepped portions is inclined at an angle of 45 ° with respect to the surface of the support 2.

  In the reflector 5 mounted in the hole 6, the reflecting surface 5 a is in contact with the tip of the step portion of the stepped surface 11, and a part of the reflecting surface 5 a is exposed to the surface side of the support 2. The light emitting points 3a and 4a from which the laser light is emitted are opposed to the portion of the reflecting surface 5a exposed on the surface side of the support 2.

  The stepped surface 11 is formed by grinding the support 2 using a diamond blade whose tip is formed in a rectangular shape.

  In the present embodiment, when the reflector 5 is mounted in the hole 6, the reflecting surface 5 a of the reflector 5 comes into contact with the tip of the stepped surface 11 of the stepped surface 11 of the hole 6, and a part of the reflecting surface 5 a is the support 2. It is exposed to the surface side. At this time, the reflection surface 5 a is maintained at an angle of 45 ° with respect to the surface of the support 2.

  For this reason, the laser beams B 1 and B 2 emitted from the light emitting points 3 a and 4 a of the semiconductor laser chips 3 and 4 and reflected by the reflecting surface 5 a travel in a direction perpendicular to the surface of the support 2. At this time, by optimizing the relative positional relationship between the reflector 5 and the semiconductor laser chips 3 and 4, for example, by adjusting the exposed dimension of the reflecting surface 5a exposed to the surface side of the support 2, the support The interval between the laser beams B1 and B2 traveling in the vertical direction from the surface 2 can be set to an arbitrarily narrow interval.

  A third embodiment of the present invention will be described with reference to FIGS. FIG. 8 is a front view showing the semiconductor laser device, and FIG. 9 is a plan view thereof.

  In the present embodiment, the hole 6 of the support 2 is formed by anisotropic etching with respect to silicon.

  When the hole 6 is formed by anisotropic etching, it is known that a slope of 54 ° is formed on the (100) plane of silicon by anisotropic etching. Therefore, by tilting the support 2 that is 9 ° off-angled to the (100) plane with the (011) direction as an axis, one slope is inclined at an angle of 45 ° with respect to the surface of the support 2. It becomes the surface 6a, and the other inclined surface becomes the inclined surface 6c inclined at an angle of 63 ° with respect to the surface of the support 2.

  In the reflector 5 mounted in the hole 6, one reflecting surface 5a is in contact with the inclined surface 6a, and one corner portion of the reflector 5 is in contact with the inclined surface 6c.

  A part of the reflector 5 mounted in the hole 6 is exposed to the surface side of the support 2, and at this time, the reflective surface 5 a is brought into contact with the reflection surface 5 a so that the reflection surface 5 a An angle of 45 ° with the surface is maintained.

  Therefore, the laser beams B1 and B2 emitted from the light emitting points 3a and 4a of the semiconductor laser chips 3 and 4 and reflected by the reflecting surface 5a are supported in the same manner as in the first or second embodiment described above. It proceeds in a direction perpendicular to the surface of the body 2.

  A fourth embodiment of the present invention will be described with reference to FIGS. In the present embodiment, an integrated optical pickup 21 using the semiconductor laser device 1 described above is shown. In this integrated optical pickup 21, light receiving portions 22 and 23 for detecting output light from the semiconductor laser chips 3 and 4 are mounted on the support 2 as a part of the semiconductor laser device 1. Furthermore, light receiving elements 24 and 25 that receive reflected light from an optical disk (not shown) such as a DVD or CD are mounted on the support 2.

  Other components of the integrated optical pickup 21 include an objective lens 26 for condensing the laser beams B1 and B2 emitted from the semiconductor laser chips 3 and 4 on the optical disk, and reflected light from the optical disk to the light receiving elements 24 and 25. A hologram element 27 or the like that is bent toward the screen is provided.

  According to this integrated optical pickup 21, a plurality of semiconductor laser chips 3 and 4, light receiving portions 22 and 23, and light receiving elements 24 and 25 corresponding to a plurality of types of optical disks are mounted, and the hologram element 27 is disposed above the support 2. And the objective lens 26 are arranged, and the miniaturization of the integrated optical pickup 21 can be achieved.

  A fifth embodiment of the present invention will be described with reference to FIG. The present embodiment is an example of an optical disk device 31 on which the integrated optical pickup 21 of the fourth embodiment is mounted. FIG. 12 is a block diagram schematically showing the electrical connection of each part provided in the optical disc apparatus 31 in the present embodiment.

  As shown in FIG. 12, the optical disc apparatus 31 includes a spindle motor 32 that constitutes a main part of a rotation drive mechanism that rotates the optical disc D at an arbitrary rotational speed, a rotation control unit 33 that controls the spindle motor 32, and an optical disc D. An integrated optical pickup 21 that emits laser beams B1 and B2 to the recording surface and receives the laser beams B1 and B2 reflected on the recording surface of the optical disc D, and this integrated optical pickup 21 is used in the radial direction of the optical disc D. Slider motor 34 to be moved, slider motor control section 35 for controlling the slider motor 34, optical pickup control section 36 for controlling the integrated optical pickup 21, and signal processing section for processing signals from the integrated optical pickup 21 37, a CPU 38 that performs arithmetic processing on various programs and stored data and controls the operation of each unit; ROM 39 which is a storage medium for storing fixed data such as read / write processing programs and control programs in advance, and RAM 40 which is a storage means for temporarily storing read data read from optical disk D, write data to be written to optical disk D, and the like. Etc. Such an optical disk device 31 is connected to a host computer 41 which is a host device via an external interface (not shown).

  The optical pickup controller 36 and the CPU 38 function as selective emission means for selectively selectively emitting either one of the laser beams B1 or B2 to the integrated optical pickup 21 according to the type of the optical disk D. That is, the selective emission means selectively drives the semiconductor laser chips 3 and 4 in the integrated optical pickup 21 according to the type of the optical disk D.

  In such a configuration, a data read / write operation with respect to the optical disc D by the optical disc apparatus 31 will be described. When a read / write command is input from the host computer 41 to the optical disc device 31, the CPU 38 of the optical disc device 31 executes read / write processing based on a read / write processing program stored in the ROM 39.

  The CPU 38 drives and controls the spindle motor 32 by the rotation control unit 33 to rotate the optical disc D, and drives and controls the slider motor 34 by the slider motor control unit 35 to move the integrated optical pickup 21 in the radial direction of the optical disc D. However, the integrated optical pickup 21 is driven and controlled by the optical pickup control unit 36 to emit laser beams B1 and B2 to the recording surface of the optical disc D, and receive the laser beams B1 and B2 reflected by the recording surface of the optical disc D. Then, read / write is executed. At this time, the CPU 38 also performs processing of transmitting the read data temporarily stored in the RAM 40 to the host computer 41 and temporarily storing the write data from the host computer 41 in the RAM 40.

  When the optical disc D is a DVD, the semiconductor laser chip 3 is selectively driven by the selective emission means to emit laser light B1, and when the optical disc D is a CD, the semiconductor laser chip 4 is selected by the selective emission means. Are selectively driven to emit laser light B2.

  Therefore, by mounting the small integrated optical pickup 21 of the fourth embodiment on the optical disk device 31, the optical disk device 31 is reduced in size.

1 is a longitudinal sectional front view showing a semiconductor laser device according to a first embodiment of the present invention. FIG. It is a longitudinal front view which expands and shows a part. It is a front view which shows the process of forming a hole in a support body. It is a perspective view which shows the process of forming a reflector. It is a vertical front view which shows the semiconductor laser apparatus of the 2nd Embodiment of this invention. FIG. It is a vertical front view which shows the semiconductor laser apparatus of the 3rd Embodiment of this invention. FIG. It is a vertical front view which shows the integrated optical pick-up of the 4th Embodiment of this invention. It is a top view which shows the part. It is a block diagram which shows the optical disk apparatus of the 5th Embodiment of this invention. It is a front view which shows the semiconductor laser apparatus of a prior art example. It is a vertical front view which shows the semiconductor laser apparatus of another prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor laser apparatus 2 Support body 3 Semiconductor laser chip 3a Light emission point 4 Semiconductor laser chip 4a Light emission point 5 Reflector 5a Reflective surface 6 Hole 6a Inclined surface 7 Diamond blade 11 Stair-shaped surface 21 Integrated optical pickup 22 Light receiving part 23 Light receiving part 24 light receiving element 25 light receiving element 26 objective lens 27 hologram element

Claims (10)

A support;
A plurality of semiconductor laser chips that are arranged on the surface of the support so that the surfaces having the light emitting points of the laser light face each other and emit laser light of different wavelengths, and
A hole formed between the semiconductor laser chips disposed opposite to each other and formed in the support;
A reflector having two reflecting surfaces that reflect the laser light emitted from the semiconductor laser chip, and the reflector is mounted in the hole so that the reflecting surface is 45 ° with respect to the surface of the support;
A semiconductor laser device comprising: The semiconductor laser device according to claim 1, wherein the reflector is formed in a quadrangular prism shape using a material mainly composed of silicon. 3. The semiconductor laser device according to claim 1, wherein the support and the reflector are made of a material mainly composed of silicon. 4. The semiconductor laser device according to claim 1, wherein an inclined surface that is inclined at an angle of 45 ° with respect to a surface of the support is formed on an inner peripheral surface of the hole. 5. The semiconductor laser device according to claim 4, wherein the inclined surface portion of the hole is formed by grinding with a diamond blade having a cross-sectional shape of 90 °. The semiconductor laser device according to claim 4, wherein the inclined surface portion of the hole is formed by anisotropic etching. 4. A stepped surface is formed on the inner peripheral surface of the hole, and a line connecting the tips of the stepped portions of the stepped surface is inclined at an angle of 45 [deg.] With respect to the surface of the support. A semiconductor laser device according to claim 1. 8. The semiconductor laser device according to claim 1, wherein a light receiving portion that detects a light output from the semiconductor laser chip is provided on the support. A semiconductor laser device according to any one of claims 1 to 8,
An objective lens for condensing the laser beam emitted from the semiconductor laser chip on the optical disc;
A light receiving element for receiving reflected light from the optical disc;
A hologram element that bends reflected light from the optical disc toward the light receiving element;
An integrated optical pickup comprising: A rotational drive mechanism for rotating the optical disc;
An integrated optical pickup according to claim 9,
Selective emission means for selecting the type of laser light emitted from the integrated optical pickup according to the type of the optical disc;
An optical disc apparatus comprising:

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