JP2005056757A - Method of manufacturing organic electroluminescent device, organic electroluminescent device, and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic EL device having high electron injecting efficiency, capable of obtaining stable luminescent characteristics. <P>SOLUTION: An electron injecting layer 52 containing an organometallic complex is formed between a cathode 50 and an organic electroluminescent layer 60. In a process to form this electron injecting layer 52, coating liquid obtained by mixing a complex having the same number of chelate ligands as the number of the valences of a center atom and an organic material forming a neutral legend in a solvent is applied on the entire surface of a substrate, and heat treatment is applied to it. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to an organic electroluminescent device, a method for manufacturing the same, and an electronic device including the organic electroluminescent device.

In an organic electroluminescence device (hereinafter referred to as an organic EL device), the role of the electron injection layer is important, and the light emission characteristics are greatly influenced by the structure. Conventionally, inorganic materials such as LiF (lithium fluoride) and Ca (calcium) have been used for the electron injection layer. LiF and Ca are originally insulating materials, but an electron injection effect can be obtained by reducing the thickness.
However, the above-described material does not provide good characteristics for all the light emitting layers of R (red), G (green), and B (blue). For example, LiF is less than the light emitting layer of B. Only exhibits excellent electron injection effect.

In order to solve such a problem, for example, Patent Document 1 proposes using an organometallic complex for the electron injection layer. In this complex, one chelate ligand is coordinated to a central atom made of an alkali metal. When such a complex is disposed between a light emitting layer made of an organic material and a cathode made of an inorganic material, high adhesion can be obtained at both interfaces, and light emission characteristics are improved in all the light emitting layers of R, G, and B. In addition, since a cathode including a metal complex can be easily made transparent, for example, by applying the above structure to a top emission type structure, brighter display can be achieved.
Japanese Patent Laid-Open No. 2000-24369

However, even the above-mentioned is still not sufficient as the light emission efficiency, and higher efficiency is desired. Further, in the above-described device, the central atom of the complex is separated from the ligand at the time of forming the cathode, which may diffuse as an impurity in the light emitting layer, and stable characteristics cannot be obtained.
The present invention has been made to solve the above-described problems, and is an organic EL device that exhibits an excellent electron injection effect for all of the R, G, and B light-emitting layers and that provides stable light-emitting characteristics. It is an object of the present invention to provide a method for manufacturing an apparatus, and to provide an organic EL device manufactured by this method and an electronic apparatus including the organic EL device.

  In order to achieve the above object, an organic EL device manufacturing method of the present invention includes, for example, an organic light emitting layer forming step for forming an organic light emitting layer made of a polymer material, and an electron injection layer forming step for forming an electron injection layer. And a cathode forming step of forming a cathode, wherein the electron injection layer forming step includes an organometallic complex having a chelate ligand of the same number as the valence of the central atom, An organic metal complex film having a number of ligands higher than the valence of the central atom is formed above the organic light-emitting layer by applying a coating solution containing an organic material that becomes a neutral ligand and heat-treating it. Including a process. In the present invention, the “electron injection layer” also includes the meaning of an “electron transport layer” having an electron transport property or a “hole block layer” that blocks holes and remains in the light emitting layer.

  The conventional organometallic complex described above is formed by coordination of a number of chelate ligands corresponding to the valence around the central atom, and when the valence of the central atom is small like an alkali metal, The number of surrounding ligands is reduced (for example, the number of ligands is one in the above-mentioned conventional one), and depending on the film forming conditions of the cathode, the central atom is separated from the ligand as described above. Sometimes. However, since the coordination number of the central atom is generally larger than its valence, when a ligand other than a chelate ligand (for example, a neutral ligand such as a heterocyclic amine) is considered, More ligands than the valence can be coordinated to the central atom. For this reason, ligands other than chelate ligands are actively coordinated around the central atom as in this method, so that the complex is formed by the coordination bond between these ligands and the central atom. Can improve the chemical stability. From a structural point of view, these ligands are arranged so as to surround the central atom, and this causes steric hindrance so that the central atom is stably held inside these ligands. Become. As described above, according to the present configuration, by improving the stability of the complex, it is possible to prevent impurities from being mixed into the light emitting layer, and thereby, an organic EL device having high emission efficiency and stable characteristics. Can be obtained. Furthermore, moisture resistance is also improved by increasing the stability of the complex.

  Further, in this method, since the electron injection layer is formed by a wet method (that is, a liquid coating method), the process becomes easier as compared with the case where it is formed by, for example, a CVD method or a sputtering method. In recent years, in the field of electronic devices, a technique for performing all wet manufacturing processes using printing technology has been developed. However, the formation of an electron injection layer by a wet method as in the present method is not possible. This will contribute to the wet technology of devices. In particular, when the light emitting layer is made of a polymer material, it can be easily formed by coating, and various techniques for forming the electrode material by coating have been developed. By forming the electron injection layer by coating, all of the light-emitting elements including the anode and the cathode can be formed by a wet process.

  By the way, in the step of forming the organic light emitting layer, in order to enable full color display, a plurality of types of organic light emitting layers having different emission colors (for example, organic light emission capable of emitting R, G, B color light) are provided on the substrate. Layer) can be arranged. However, when a plurality of light emitting layers are arranged side by side in this way, the optimum complex material may be different for each light emitting layer. Therefore, when adopting the above-described configuration, in the electron injection layer forming step, a plurality of types of the organometallic complexes are selected corresponding to the plurality of types of organic light-emitting materials, and each of the selected complexes is in a solvent. It is preferable to apply a coating liquid obtained by mixing the above (that is, a coating liquid containing a plurality of selected organometallic complexes) above the organic light emitting layer. Thereby, the electron injection layer which exhibits the excellent electron injection effect with respect to all the light emitting elements can be formed. It is also possible to adjust the color balance by changing the mixing ratio of each complex.

  Alternatively, in the electron injection layer forming step, a plurality of types of organometallic complexes are selected corresponding to each of the plurality of types of organic light emitting materials, and a plurality of types selected corresponding to each of the plurality of types of organic light emitting materials. Each of the plurality of types of organic light emitting materials corresponding to the plurality of types of coating solutions containing each of the plurality of types of organometallic complexes is formed by a droplet discharge method. You may apply to. That is, an organometallic complex is selected for each light emitting layer, and a coating solution is prepared for each light emitting layer using the selected complex, and each coating solution is applied to the corresponding light emitting layer by a droplet discharge method. You may apply | coat selectively. Unlike the spin coating method or the like, the droplet discharge method enables coating liquids to be applied separately, so that an optimum material design can be performed for each light emitting layer. In this case, it is also easy to adjust the color balance of each light emitting layer.

  In the above-described method, it is desirable that the central atom of the organometallic complex is composed of the same metal element as at least one constituent element of the cathode. Thus, by comprising an electron injection layer and a cathode with the same kind of material, the adhesive force of these interfaces further increases, and a much higher electron injection effect can be obtained. In addition, when the electron injection layer is formed of a material containing a constituent element of the cathode in this way, even if this cathode material diffuses to the lower layer side when the cathode is formed, it can act as an impurity in the electron injection layer. Absent. For this reason, an element having stable electrical characteristics can be obtained. In addition, the said complex should just take in the constituent element of the cathode of the interface vicinity with an electron injection layer as a central atom, for example, when a cathode consists of a laminated body of a some thin film, the central atom of the said complex is Of the thin films, the same constituent elements as those of the thin film disposed closest to the electron injection layer may be used.

  In order to increase the electron injection efficiency, the cathode preferably contains a low work function metal (for example, alkali metal, alkaline earth metal, magnesium, rare earth element) as a constituent element. In addition, such a metal element should just exist in the interface with an electron injection layer at least, for example, when a cathode consists of a laminated body of a some thin film, among these thin films, it is the electron injection layer side most. What is necessary is just to comprise the arrange | positioned thin film with said low work function metal element. At this time, if the central atom of the complex is composed of the same low work function metal element (for example, alkali metal, alkaline earth metal, magnesium, rare earth element), the adhesion between the cathode and the electron injection layer The light emission efficiency is further increased since the property is increased and the electron injection barrier is also lowered.

  As the above-described organometallic complex, those having various structures such as a chelate complex and a crown ether complex which is a cyclic polyether can be used. Among them, a complex having a β-diketone-based ligand (β-diketone complex) is an acidic reagent and a multidentate ligand based on an oxygen atom, so that a stable complex can be formed.

The organic EL device of the present invention is manufactured by the above-described method. Thereby, an organic EL device having high luminous efficiency and stable characteristics can be provided.
In addition, an electronic apparatus according to the present invention includes the above-described organic electroluminescence device. As a result, an electronic device that has a long life and can display brightly can be provided.

Hereinafter, an organic EL device according to an embodiment of the present invention will be described with reference to the drawings.
(Organic EL device)
FIG. 1 is a diagram schematically showing a wiring structure of the organic EL device of this embodiment.
The organic EL device 1 is an active matrix display device using a thin film transistor (hereinafter abbreviated as TFT) as a switching element.

As shown in FIG. 1, the organic EL device 1 includes a plurality of scanning lines 101, a plurality of signal lines 102 extending in a direction perpendicular to the scanning lines 101, and parallel to each signal line 102. And a plurality of power supply lines 103 extending in parallel to each other, and pixel regions X are provided near intersections of the scanning lines 101 and the signal lines 102.
A data line driving circuit 100 including a shift register, a level shifter, a video line, and an analog switch is connected to the signal line 102. Further, a scanning line driving circuit 80 including a shift register and a level shifter is connected to the scanning line 101.

  Further, in each pixel region X, a switching TFT 112 to which a scanning signal is supplied to the gate electrode via the scanning line 101 and a storage capacitor for holding a pixel signal shared from the signal line 102 via the switching TFT 112. 113, a driving TFT 123 to which a pixel signal held by the holding capacitor 113 is supplied to a gate electrode, and a driving current from the power supply line 103 when electrically connected to the power supply line 103 via the driving TFT 123 A pixel electrode (anode) 23 into which the liquid crystal flows and a functional layer 110 sandwiched between the pixel electrode 23 and the cathode 50 are provided. The pixel electrode 23, the cathode 50 and the functional layer 110 constitute a light emitting element (organic EL element).

  According to the organic EL device 1, when the scanning line 101 is driven and the switching TFT 112 is turned on, the potential of the signal line 102 at that time is held in the holding capacitor 113, and according to the state of the holding capacitor 113. The on / off state of the driving TFT 123 is determined. Then, current flows from the power supply line 103 to the pixel electrode 23 through the channel of the driving TFT 123, and further current flows to the cathode 50 through the functional layer 110. The functional layer 110 emits light according to the amount of current flowing through it.

Next, a specific configuration of the organic EL device 1 of this example will be described with reference to FIGS.
First, the planar structure of the organic EL of this embodiment will be described with reference to FIG.
The organic EL device 1 according to this example includes a substrate 20 having electrical insulation and a pixel electrode region in which pixel electrodes connected to a switching TFT (not shown) are arranged in a matrix on the substrate 20 (see FIG. (Not shown), a power line (not shown) arranged around the pixel electrode area and connected to each pixel electrode, and a pixel portion 3 (FIG. 2) having a substantially rectangular shape in plan view located at least on the pixel electrode area Medium one-dot chain line frame). In the present invention, the substrate 20 and the switching TFT and various circuits formed on the substrate 20 as will be described later, and an interlayer insulating film are referred to as a base.

The pixel unit 3 includes a real display area 4 in the center (inside the two-dot chain line in FIG. 2) and a dummy area 5 (area between the one-dot chain line and the two-dot chain line) arranged around the real display area 4. It is divided into.
In the actual display area 4, display areas R, G, and B each having a pixel electrode are arranged in a matrix so as to be separated from each other in the AB direction and the CD direction.
Further, scanning line driving circuits 80 and 80 are arranged on both sides of the actual display area 4 in FIG. These scanning line drive circuits 80 and 80 are arranged below the dummy region 5.

  Further, an inspection circuit 90 is arranged above the actual display area 4 in FIG. This inspection circuit 90 is a circuit for inspecting the operating state of the organic EL device 1 and includes, for example, inspection information output means (not shown) for outputting the inspection result to the outside, and is displayed during manufacture or at the time of shipment. Equipment quality and defects can be inspected. The inspection circuit 90 is also arranged below the dummy area 5.

  The scanning line driving circuit 80 and the inspection circuit 90 are applied with a driving voltage from a predetermined power supply unit via a driving voltage conducting unit 310 (see FIG. 3) and a driving voltage conducting unit 340 (see FIG. 4). The drive control signals and drive voltages to the scanning line drive circuit 80 and the inspection circuit 90 are supplied from a predetermined main driver that controls the operation of the organic EL device 1 and the drive control signal conduction unit 320 (see FIG. 3) and Transmission and application are performed via the drive voltage conduction unit 350 (see FIG. 4). The drive control signal in this case is a command signal from a main driver or the like related to control when the scanning line drive circuit 80 and the inspection circuit 90 output signals.

Next, the cross-sectional structure of the organic EL device will be described with reference to FIGS. 3 and 4 are cross-sectional views taken along the line AB of FIG. 2, and FIG. 5 is an enlarged view of a main part thereof.
As shown in FIGS. 3 and 4, the organic EL device 1 is obtained by bonding a substrate 20 and a sealing substrate 30 through a sealing resin 40.

In the case of a so-called bottom emission type organic EL device, the substrate 20 is configured to extract emitted light from the substrate 20 side, and thus a transparent or translucent substrate is employed. For example, glass, quartz, resin (plastic, plastic film) and the like can be mentioned. In particular, an inexpensive soda glass substrate is preferably used.
Further, in the case of a so-called top emission type organic EL device, since the emitted light is extracted from the sealing substrate 30 side which is the opposite side of the substrate 20, either a transparent substrate or an opaque substrate is used as the substrate 20. It can also be used. Examples of the opaque substrate include a thermosetting resin and a thermoplastic resin in addition to a ceramic sheet such as alumina and a metal sheet such as stainless steel that has been subjected to an insulation treatment such as surface oxidation.

  For the sealing substrate 30, for example, a plate-like member having electrical insulation can be adopted. In particular, in the case of the top emission type, a transparent substrate such as glass, quartz, or resin is employed as the sealing substrate 30. The sealing resin 40 is made of, for example, a thermosetting resin or an ultraviolet curable resin, and is preferably made of an epoxy resin that is a kind of thermosetting resin.

Further, the circuit unit 11 including a driving TFT 123 for driving the pixel electrode 23 and the like is formed on the substrate 20, and a light emitting element is provided thereon. As shown in FIG. 5, the light emitting element is formed by sequentially laminating a pixel electrode 23, a functional layer 110 mainly composed of a light emitting layer 60, and a cathode 50.
The pixel electrode 23 functions as an anode for supplying holes to the light emitting layer 60. In the case of the bottom emission type, for example, the pixel electrode 23 is ITO (indium tin oxide), indium oxide / zinc oxide. A transparent conductive material such as an amorphous transparent conductive film (Indium Zinc Oxide: IZO (registered trademark)) (manufactured by Idemitsu Kosan Co., Ltd.) is used. In the case of the top emission type, not only such a transparent conductive material but also a light reflective or opaque conductive material such as aluminum (Al) or silver (Ag) can be used.

For the light emitting layer 60, a known light emitting material capable of emitting fluorescence or phosphorescence can be used. Specifically, (poly) fluorene derivative (PF), (poly) paraphenylene vinylene derivative (PPV), polyphenylene derivative (PP), polyparaphenylene derivative (PPP), polyvinyl carbazole (PVK), polythiophene derivative, polydialkyl Polysilanes such as fluorene (PDAF), polyfluorene benzothiadiazole (PFBT), polyalkylthiophene (PAT), and polymethylphenylsilane (PMPS) are preferably used.
In addition, these polymer materials include polymer materials such as perylene dyes, coumarin dyes, rhodamine dyes, rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, Nile red, coumarin 6, and quinacridone. It can also be used by doping a low molecular weight material such as.

The “polymer” means a polymer having a molecular weight higher than that of a so-called “low molecule” having a molecular weight of about several hundreds. The above-mentioned polymer material includes a polymer generally called a polymer and having a molecular weight of 10,000 or more. In addition, a low polymer called an oligomer having a molecular weight of 10,000 or less is included.
In the present embodiment, light emitting layers corresponding to R (red), G (green), and B (blue) are juxtaposed in one pixel in order to perform full color display.

  In the present embodiment, a hole injection / transport layer 70 (see FIG. 5) can be provided between the pixel electrode 23 and the light emitting layer 60 as necessary. By providing this hole injecting / transporting layer, electrons moving in the light emitting layer 60 are efficiently blocked, and the recombination probability of electrons and holes in the light emitting layer is increased. For the hole injection / transport layer 70, a material having a low injection barrier from the pixel electrode 23 and high hole mobility is preferably used. As such a material, for example, a polythiophene derivative, a polypyrrole derivative, or a doped body thereof is used. Specifically, a dispersion of 3,4-polyethylenedioxythiophene / polystyrene sulfonic acid (PEDOT / PSS) [trade name; Bytron-p: manufactured by Bayer], that is, polystyrene as a dispersion medium A dispersion liquid in which 3,4-polyethylenedioxythiophene is dispersed in sulfonic acid and then dispersed in water is used.

As shown in FIGS. 3 to 5, the cathode 50 has an area larger than the total area of the actual display region 4 and the dummy region 5 and is formed so as to cover each. As the cathode 50, for example, in the case of a top emission type, a transparent conductive material is used. As such a transparent conductive material, a co-deposited film of bathocuproine (BCP) and cesium (Cs) can be suitably used. In this case, a structure in which ITO is laminated to further impart conductivity is preferably employed. Instead of the co-deposited film of BCP and Cs, an ultra-thin Ca film (for example, a thin film having a thickness of about 5 nm) may be formed, and ITO may be laminated thereon. In the case of the bottom emission type, not only such a transparent conductive material but also a light reflective or opaque conductive material such as Al can be used.
At this time, in order to increase the electron injection efficiency, the cathode may contain a low work function metal element (for example, alkali metal, alkaline earth metal, magnesium, rare earth element (excluding Pm)) as a constituent element. desirable. Note that such a metal element only needs to exist at least at the interface on the light emitting layer 60 side. For example, when the cathode is formed of a laminate of a plurality of thin films, the thin film disposed closest to the light emitting layer 60 is the above-mentioned. The low work function metal element may be used. Specifically, a cathode having a high electron injection efficiency can be obtained by forming Ca to a thickness of about 20 nm and further forming Al thereon to a thickness of about 200 nm. In this case, Al also has a function as a reflective layer for emitting emitted light to the substrate 20 side.

In the present embodiment, in order to increase the electron injection efficiency from the cathode 50 to the light emitting layer 60, an electron injection layer 52 containing an organometallic complex is provided between the cathode 50 and the light emitting layer 60. This complex has the general formula MA _n B _m (n: the valence of the central atom M) where M is a central atom made of a metal element, A is a chelate ligand made of an organic material, and B is a neutral ligand made of an organic material. Number, m: natural number). As such a complex, complexes having various structures such as a chelate complex and a crown ether complex can be used.

  Specifically, as the chelate ligand A, acetylacetone (acac), dipipaloylmethane (dpm), hexafluoroacetylacetone (hfa), 2,2,6,6, -tetramethyl-3,5-octane Β-diketone ligands such as diacetone (TMOD), thenoyltrifluoroacetone (TTA), 1-phenyl-3-isohept-1,3-propanedione (trade names LIX54, LIX51; Henkel), 8 -Quinolinol ligands such as quinolinol (oxin), 2-methyl-8-quinolinol, trioctyl phosphine oxide (TOPO), tributyl phosphate (TBP), isobutyl methyl ketone (MBK), bis (2-ethylhexyl) ) Phosphoric acid ligands such as phosphoric acid (D2EHPA), carbohydrates such as acetic acid and benzoic acid Acid ligand, can be suitably used diphenylthiocarbazone ligands like. Among them, a complex having a β-diketone-based ligand (β-diketone complex) is an acidic reagent and a multidentate ligand based on an oxygen atom, so that a stable complex can be formed.

  In addition, as the neutral ligand B, 2,2′-bipyridine (bpy), 1,10-phenanthroline (phen), 2,9-dimethyl-1,10-phenanthroline (dmp), Heterocyclic amines such as bathophenanthroline (b-phen) and bathocuproine (bcp), pyridine (py), and the like can be preferably used.

By the way, in the electron injection layer 52, the central atom M can be composed of the same metal element as the metal element constituting the cathode 50 in order to increase the adhesion between the electron injection layer 52 and the cathode 50. In this case, the central atom M may be the same as the constituent element of the cathode located in the vicinity of the interface with the electron injection layer 52. For example, when the cathode is formed of a laminate of a plurality of thin films, the central atom M May be the same as the constituent elements of the thin film disposed closest to the electron injection layer among the thin films. Specifically, when the cathode 50 is made of an Al single layer film, Al (acac) ₃ · bpy having the same metal element as the central atom is used as the complex. Further, when the cathode 50 is made of a laminated film of Ca and Al, Ca (acac) ₂ · bpy having Ca as a central atom, which is arranged closer to the electron injection layer, is used, and BCP and Cs are used for the cathode 50. When a co-evaporated film is used, Cs (acac) · bpy or the like is used as the complex.
When the cathode 50 is composed of a metal element having a low work function, the central atom M of the complex is composed of a metal element such as an alkali metal, an alkaline earth metal, magnesium, or a rare earth element. Since such a complex has a high electron affinity and a small electron injection barrier, the luminous efficiency is further increased.

Moreover, in this embodiment, the complex suitable for each light emitting layer can also be mixed in an electron injection layer. That is, when a plurality of types of light emitting layers of R, G, and B are provided in one pixel as in this embodiment, the optimum complex material may be different for each light emitting layer. For example, a complex having Sr (strontium) as a central atom exhibits a large electron injection effect for the R light-emitting layer, but does not have such a large effect for the B light-emitting layer. On the other hand, the complex having Li as the central atom has a great effect on the B light emitting layer, but cannot achieve the desired effect on the R or G light emitting layer. For this reason, it is possible to further increase the light emission efficiency by mixing organometallic complexes suitable for each light emitting layer in the electron injection layer and complementing the functions between the respective complexes. .
Alternatively, an optimal complex may be selected for each light emitting layer, and each selected complex may be selectively provided for the corresponding light emitting layer. That is, the electron injection layer may be provided individually for each light emitting layer, and the electron injection layer provided in each light emitting layer may include only the complex selected corresponding to the light emitting layer. . In this configuration, an optimum material design can be performed for each light emitting layer. In this case, it is also easy to adjust the color balance of each light emitting layer.

  In addition, the above complex can be used alone or in combination with a conventionally known electron transporting material. Examples of such known electron transporting materials include cyclopentadiene derivatives, oxadiazole derivatives, bisstyrylbenzene derivatives, p-phenylene compounds, phenanthroline derivatives, triazole derivatives, and the like. The film thickness of the electron injection layer 52 is preferably 0.1 nm to 1 nm in order to ensure conductivity.

Next, based on FIG. 5, the structure of a circuit part in order to drive this light emitting element is demonstrated.
A circuit unit 11 is provided below the light emitting element as shown in FIG. The circuit unit 11 is formed on the substrate 20 and constitutes a base. That is, a base protective layer 281 mainly composed of SiO ₂ is formed on the surface of the substrate 20 as a base, and a silicon layer 241 is formed thereon. A gate insulating layer 282 mainly composed of SiO ₂ or SiN is formed on the surface of the silicon layer 241.
In the silicon layer 241, a region overlapping with the gate electrode 242 with the gate insulating layer 282 interposed therebetween is a channel region 241a. The gate electrode 242 is a part of the scanning line 101 (not shown). On the other hand, a first interlayer insulating layer 283 mainly composed of SiO ₂ is formed on the surface of the gate insulating layer 282 that covers the silicon layer 241 and on which the gate electrode 242 is formed.

  Further, in the silicon layer 241, a low concentration source region 241b and a high concentration source region 241S are provided on the source side of the channel region 241a, while a low concentration drain region 241c and a high concentration drain are provided on the drain side of the channel region 241a. The region 241D is provided to form a so-called LDD (Light Doped Drain) structure. Among these, the high-concentration source region 241S is connected to the source electrode 243 through a contact hole 243a that opens over the gate insulating layer 282 and the first interlayer insulating layer 283. The source electrode 243 is configured as a part of the above-described power supply line 103 (see FIG. 1, extending in the direction perpendicular to the paper surface at the position of the source electrode 243 in FIG. 5). On the other hand, the high-concentration drain region 241D is connected to the drain electrode 244 made of the same layer as the source electrode 243 through a contact hole 244a that opens through the gate insulating layer 282 and the first interlayer insulating layer 283.

The upper layer of the first interlayer insulating layer 283 on which the source electrode 243 and the drain electrode 244 are formed is covered with a second interlayer insulating layer 284 mainly composed of, for example, an acrylic resin component. The second interlayer insulating layer 284 can be made of a material other than an acrylic insulating film, for example, a silicon compound such as SiN or SiO ₂ . As described above, when a silicon compound having a high gas barrier property, particularly a silicon nitrogen compound, is used for the second interlayer insulating film 282, oxygen or moisture is transferred from the substrate side to the light emitting layer 60 even when the substrate body 20 is a highly moisture permeable resin substrate. Or the like can be prevented, and the lifetime of the light-emitting element can be extended.
A pixel electrode 23 made of ITO is formed on the surface of the second interlayer insulating layer 284, and the pixel electrode 23 is connected to the drain electrode through a contact hole 23 a provided in the second interlayer insulating layer 284. 244. That is, the pixel electrode 23 is connected to the high concentration drain region 241D of the silicon layer 241 through the drain electrode 244.

  Note that TFTs (driving circuit TFTs) included in the scanning line driving circuit 80 and the inspection circuit 90, that is, N-channel type or P-channel type TFTs constituting an inverter included in the shift register among these driving circuits, for example. The structure is the same as that of the driving TFT 123 except that it is not connected to the pixel electrode 23.

A bank structure including the pixel electrode 23, the lyophilic control layer 25, and the organic bank layer 221 is provided on the surface of the second interlayer insulating layer 284 on which the pixel electrode 23 is formed. The lyophilic control layer 25 is mainly made of a lyophilic material such as SiO ₂ , and the organic bank layer 221 is made of, for example, acrylic or polyimide. On the pixel electrode 23, the hole injection / transport layer 70 and the light emitting layer are formed in the opening 25 a provided in the lyophilic control layer 25 and the opening 221 a surrounded by the organic bank 221. 60 are stacked in this order. In addition, “lyophilic” of the lyophilic control layer 25 in this example means that the lyophilic property is higher than at least materials such as acrylic and polyimide constituting the organic bank layer 221.
The layers up to the second interlayer insulating layer 284 on the substrate 20 described above constitute the circuit unit 11.

(Method for manufacturing organic EL device)
Next, as an embodiment of the present invention, an example of a method for manufacturing the organic EL device 1 will be described with reference to FIGS. Here, each sectional view shown in FIGS. 6 to 9 corresponds to a sectional view taken along line AB in FIG.

  First, as shown in FIG. 6A, a base protective layer 281 is formed on the surface of the substrate 20. Next, after an amorphous silicon layer 501 is formed on the base protective layer 281 using an ICVD method, a plasma CVD method, or the like, crystal grains are grown by a laser annealing method or a rapid heating method to form a polysilicon layer.

  Next, as shown in FIG. 6B, the polysilicon layer is patterned by a photolithography method to form island-like silicon layers 241, 251 and 261. Among these, the silicon layer 241 is formed in the display region and constitutes a driving TFT 123 connected to the pixel electrode 23, and the silicon layers 251 and 261 are P-channel type included in the scanning line driving circuit 80. And N-channel type TFTs (driving circuit TFTs).

  Next, a gate insulating layer 282 is formed of a silicon oxide film having a thickness of about 30 nm to 200 nm on the entire surface of the silicon layers 241, 251 and 261, and the base protective layer 281 by plasma CVD, thermal oxidation, or the like. Here, when the gate insulating layer 282 is formed using a thermal oxidation method, the silicon layers 241, 251 and 261 are also crystallized, and these silicon layers can be made into polysilicon layers.

When channel doping is performed on the silicon layers 241, 251 and 261, for example, boron ions are implanted at a dose of about 1 × 10 ¹² cm ⁻² at this timing. As a result, the silicon layers 241, 251 and 261 are low-concentration P-type silicon layers having an impurity concentration (calculated from the impurities after activation annealing) of about 1 × 10 ¹⁷ cm ⁻³ .

Next, an ion implantation selection mask is formed in part of the channel layer of the P-channel TFT and the N-channel TFT, and in this state, phosphorus ions are ion-implanted at a dose of about 1 × 10 ¹⁵ cm ⁻² . As a result, high concentration impurities are introduced into the patterning mask in a self-aligned manner, and as shown in FIG. 6C, the high concentration source regions 241S and 261S and the high concentration drain region are formed in the silicon layers 241 and 261. 241D and 261D are formed.

  Next, as shown in FIG. 6C, a gate electrode forming conductive layer 502 made of a metal film such as doped silicon, a silicide film, or an aluminum film, a chromium film, or a tantalum film is formed on the entire surface of the gate insulating layer 282. Form. The thickness of the conductive layer 502 is approximately 500 nm. Thereafter, as shown in FIG. 6D, a gate electrode 252 for forming a P-channel type driving circuit TFT, a gate electrode 242 for forming a pixel TFT, and an N-channel type driving circuit TFT are formed by patterning. A gate electrode 262 to be formed is formed. Further, the drive control signal conducting portion 320 (350) and the first layer 121 of the cathode power supply wiring are also formed at the same time. In this case, the drive control signal conducting portion 320 (350) is disposed in the dummy region 5.

Subsequently, as shown in FIG. 6 (d), using the gate electrodes 242, 252 and 262 as a mask, phosphorus ions are ion-implanted with respect to the silicon layers 241, 251 and 261 at a dose of about 4 × 10 ¹³ cm ^−2. inject. As a result, low-concentration impurities are introduced in a self-aligned manner with respect to the gate electrodes 242, 252 and 262, and as shown in FIG. 6 (d), the low-concentration source regions 241b and 261b in the silicon layers 241 and 261, and Low concentration drain regions 241c and 261c are formed. In addition, low concentration impurity regions 251S and 251D are formed in the silicon layer 251.

Next, as shown in FIG. 7E, an ion implantation selection mask 503 that covers a portion other than the P-channel type driver circuit TFT 252 is formed. Using this ion implantation selection mask 503, boron ions are implanted into the silicon layer 251 at a dose of about 1.5 × 10 ¹⁵ cm ⁻² . As a result, since the gate electrode 252 constituting the TFT for the P-channel type drive circuit also functions as a mask, the silicon layer 252 is doped with a high concentration impurity in a self-aligning manner. Accordingly, the low-concentration impurity regions 251S and 251D are counter-doped and become source and drain regions of a P-type channel type driving circuit TFT.

  Next, as shown in FIG. 7F, a first interlayer insulating layer 283 is formed over the entire surface of the substrate 20, and the first interlayer insulating layer 283 is patterned by using a photolithography method to thereby form each TFT. A contact hole C is formed at a position corresponding to the source electrode and the drain electrode.

  Next, as shown in FIG. 7G, a conductive layer 504 made of a metal such as aluminum, chromium, or tantalum is formed so as to cover the first interlayer insulating layer 283. The thickness of the conductive layer 504 is approximately 200 nm to 800 nm. Thereafter, in the conductive layer 504, a region 240a where the source electrode and the drain electrode of each TFT are to be formed, a region 310a where the driving voltage conducting portion 310 (340) is to be formed, and a second layer of the cathode power supply wiring are formed. A patterning mask 505 is formed so as to cover the region 122a to be formed, and the conductive layer 504 is patterned so that the source electrodes 243, 253, 263, and the drain electrodes 244, 254, 264 shown in FIG. Form.

Next, as shown in FIG. 8I, a second interlayer insulating layer 284 that covers the first interlayer insulating layer 283 on which these are formed is formed of a polymer material such as an acrylic resin. The second interlayer insulating layer 284 is preferably formed to a thickness of about 1 to 2 μm. It is also possible to form the second interlayer insulating film with SiN and SiO ₂ , and it is desirable to form the SiN film with a thickness of 200 nm and the SiO _{2 with} a thickness of 800 nm.

Next, as shown in FIG. 8J, a portion of the second interlayer insulating layer 284 corresponding to the drain electrode 244 of the driving TFT is removed by etching to form a contact hole 23a.
Thereafter, a conductive film to be the pixel electrode 23 is formed so as to cover the entire surface of the substrate 20. Then, by patterning this transparent conductive film, as shown in FIG. 9 (k), a pixel electrode 23 that is electrically connected to the drain electrode 244 through the contact hole 23a of the second interlayer insulating layer 284 is formed, and at the same time, a dummy An area dummy pattern 26 is also formed. In FIGS. 3 and 4, the pixel electrode 23 and the dummy pattern 26 are collectively referred to as a pixel electrode 23.

  The dummy pattern 26 is configured not to be connected to the lower metal wiring via the second interlayer insulating layer 284. That is, the dummy pattern 26 is arranged in an island shape and has substantially the same shape as the shape of the pixel electrode 23 formed in the actual display region. Of course, the structure may be different from the shape of the pixel electrode 23 formed in the display region. In this case, the dummy pattern 26 includes at least one located above the drive voltage conducting portion 310 (340).

Next, as shown in FIG. 9L, a lyophilic control layer 25 as an insulating layer is formed on the pixel electrode 23, the dummy pattern 26, and the second interlayer insulating film. In the pixel electrode 23, the lyophilic control layer 25 is formed so as to partially open, and holes can be transferred from the pixel electrode 23 in the opening 25a (see also FIG. 3). On the contrary, in the dummy pattern 26 in which the opening 25a is not provided, the insulating layer (lyophilic control layer) 25 serves as a hole movement shielding layer and does not cause hole movement.
Subsequently, in the lyophilic control layer 25, a BM is formed in a concave portion formed between two different pixel electrodes 23. Specifically, a film is formed on the concave portion of the lyophilic control layer 25 by sputtering using metallic chromium.

  Next, as shown in FIG. 9 (m), an organic bank layer 221 is formed so as to cover a predetermined position of the lyophilic control layer 25, specifically, the BM. As a specific method for forming an organic bank layer, for example, an organic layer is formed by applying a resist such as an acrylic resin or a polyimide resin dissolved in a solvent by various coating methods such as a spin coating method or a dip coating method. . The constituent material of the organic layer may be any material as long as it does not dissolve in the ink solvent described later and is easily patterned by etching or the like.

  Next, the organic layer is simultaneously etched by a photolithography technique or the like to form a bank opening 221a of an organic substance, and an organic bank layer 221 having a wall surface in the opening 221a is formed. In this case, the organic bank layer 221 includes at least one located above the drive control signal conducting unit 320.

  Next, a region showing lyophilicity and a region showing liquid repellency are formed on the surface of the organic bank layer 221. In the present embodiment, each region is formed by a plasma treatment process. Specifically, the plasma treatment process includes a preheating process, and the upper surface of the organic bank layer 221, the wall surface of the opening 221a, the electrode surface 23c of the pixel electrode 23, and the upper surface of the lyophilic control layer 25 are made lyophilic. An ink repellent process, an ink repellent process for making the upper surface of the organic bank layer and the wall surface of the opening liquid repellent, and a cooling process.

That is, the base material (substrate 20 including a bank or the like) is heated to a predetermined temperature, for example, about 70 to 80 ° C., and then plasma treatment using oxygen as a reactive gas in an atmospheric atmosphere (O ₂ plasma treatment) as an ink-philic process. To do. Next, as an ink repellent process, plasma treatment using CF ₄ as a reactive gas (CF ₄ plasma treatment) is performed in an air atmosphere, and then the substrate heated for the plasma treatment is cooled to room temperature. In addition, lyophilicity and liquid repellency are imparted to predetermined locations.

In this CF ₄ plasma treatment, the electrode surface 23c of the pixel electrode 23 and the lyophilic control layer 25 are somewhat affected, but the structure of the ITO that is the material of the pixel electrode 23 and the lyophilic control layer 25. Since materials such as SiO ₂ and TiO ₂ have poor affinity for fluorine, the hydroxyl group imparted in the ink-philic process is not replaced with the fluorine group, and the lyophilic property is maintained.

  Next, as shown in FIG. 10 (n), a hole injection / transport layer forming step is performed to form the hole injection / transport layer 70. In the hole injecting / transporting layer forming step, an ink jet method is particularly preferably employed as a droplet discharge method. That is, by this ink jet method, the hole injection / transport layer forming material is selectively disposed on the electrode surface 23c and applied. Thereafter, drying treatment and heat treatment are performed to form the hole injection / transport layer 70 on the pixel electrode 23. As a material for forming the hole injection / transport layer 70, for example, a material obtained by dissolving the PEDOT: PSS in a polar solvent such as isopropyl alcohol is used.

  Here, in forming the hole injection / transport layer 70 by the ink jet method, first, a hole injection / transport layer forming material is filled in the ink jet head (not shown), and the discharge nozzle of the ink jet head is controlled to be lyophilic. The amount of liquid per droplet was controlled from the ejection nozzle while moving the inkjet head and the base material (substrate 20) relative to the electrode surface 23c located in the opening 25a formed in the layer 25. A droplet is discharged onto the electrode surface 23c. Next, the discharged liquid droplets are dried, and the dispersion medium and solvent contained in the material are evaporated, thereby forming the hole injection / transport layer 70.

At this time, the droplet discharged from the discharge nozzle spreads on the electrode surface 23c that has been subjected to the lyophilic treatment, and fills the opening 25a of the lyophilic control layer 25. On the other hand, droplets are repelled and do not adhere on the upper surface of the organic bank layer 221 that has been subjected to the liquid repellent treatment. Therefore, even if the liquid droplet is displaced from a predetermined discharge position and a part of the liquid droplet is applied to the surface of the organic bank layer 221, the surface is not wetted by the liquid droplet, and the repelled liquid droplet is not lyophilic. It is drawn into the opening 25 a of the property control layer 25.
In addition, after this hole injection / transport layer formation process, it is preferable to carry out in inert gas atmospheres, such as nitrogen atmosphere and argon atmosphere, in order to prevent oxidation and moisture absorption of various formation materials and the formed element.

  Next, an organic EL layer forming step is performed to form the organic EL layer 60. In this step, similarly to the formation of the hole injection / transport layer 70, an ink jet method which is a droplet discharge method is preferably employed. That is, the light emitting layer forming material is ejected onto the hole injection / transport layer 70 by an ink jet method, and then subjected to a drying process and a heat treatment, so that the inside of the opening 221 a formed in the organic bank layer 221, that is, the pixel region. A light emitting layer 60 is formed thereon. In this organic EL layer forming step, in order to prevent re-dissolution of the hole injection / transport layer 70, as a solvent for the material ink used in forming the organic EL layer, the hole injection / transport layer 70 is used. An insoluble nonpolar solvent is used. Further, the light emitting layer 60 is formed for each color.

  Next, an electron injection layer forming step is performed to form the electron injection layer 52 on the organic EL layer 60. For this electron injection layer 52, an organometallic complex in which a chelate ligand and a neutral ligand are coordinated so as to surround a central atom is used. As a method for forming the electron injection layer 52, a known method such as a resistance heating vapor deposition method or a coating method can be employed. Hereinafter, specific process examples (a) to (e) will be described.

(A) A method of forming a neutral ligand and a complex by co-evaporation.
In this method, a metal element with a low work function as a central atom is selected, and this metal element, an organic material as a chelate ligand, and an organic material as a neutral ligand are co-deposited on the entire surface of the substrate. To do. Alternatively, by co-evaporating an organometallic complex having the same number of chelate ligands as the valence of the central atom (first organometallic complex) and an organic material serving as a neutral ligand, An organometallic complex having a larger number of ligands than the valence (second organometallic complex) is formed.
When the co-evaporation method is used as described above, a cathode design suitable for a light-emitting material can be achieved by freely combining existing complexes and ligand materials in a vapor deposition machine. Moreover, since the composition of the obtained organometallic complex can be arbitrarily adjusted by changing the deposition conditions (for example, the deposition temperature of the complex and the neutral ligand), the element structure can be easily optimized. In addition, it is preferable to use the constituent element of the cathode 50 formed in the next step for the central atom of the complex. In this way, the electron injection layer is made of a material including the cathode constituent material, so that not only the adhesion to the cathode is increased, but even if the cathode material diffuses to the lower layer side when the cathode is formed, this is the electron injection. Since it does not act as an impurity in the layer, it contributes to the electrical stability of the device.

(B) A method in which a neutral ligand and a plurality of types of complexes are co-evaporated.
In this method, an optimum organometallic complex (first organometallic complex) is selected for each of the R, G, and B light-emitting layers, and these selected complexes are used as the organic ligands as the neutral ligands. By vapor-depositing the whole surface of the substrate together with the material, an organometallic complex (second organometallic complex) having a larger number of ligands than the valence of the central atom is formed.
When multiple types of R, G, and B light emitting layers are provided in one pixel as in the present embodiment, the optimum complex material may be different for each light emitting layer. For this reason, when the same complex is formed in each light emitting layer as in the above method (a), there may be a case where a desired effect cannot be obtained for a specific light emitting layer. In contrast, in the present method, the formed electron injection layer includes a plurality of types of complexes selected corresponding to each of the light emitting layers in a mixed state. For this reason, the outstanding electron injection effect can be exhibited with respect to all the light emitting layers. In this method, it is also possible to adjust the color balance by changing the deposition conditions (e.g., the deposition temperature of each complex) of each complex.

(C) A method in which the complex is formed on the entire surface of the substrate by a coating method.
In this method, first, an optimal organometallic complex (first organometallic complex) is selected for each of the R, G, and B light-emitting layers, and each selected complex is dissolved in a solvent to obtain a common coating solution. Is made. Then, this coating solution is applied to the entire surface of the substrate (for example, spin coating) and dried to form a complex having the same number of chelate ligands as the valence of the central atom on the light emitting layer (first). Step of forming organometallic complex 1). At this time, in order to prevent re-dissolution of the light emitting layer 60, a polar solvent insoluble in the light emitting layer 60 is used as a solvent for the coating solution. And the organic material used as a neutral ligand is vapor-deposited on the complex formed in this way, and a neutral ligand is combined around a central atom (the formation process of a 2nd organometallic complex).
In this method, part of the method (b) is performed by a wet method (that is, a coating method). For this reason, a structure similar to the method (b) is formed also in this method. In this method, it is also possible to apply an organometallic material in which a neutral ligand is already coordinated. However, as the number of ligands increases, the polarity of the complex decreases, and accordingly, a solvent that is nearly nonpolar is required as the solvent of the coating solution, so when applying such a solution, The light emitting layer 60 may be re-dissolved. Therefore, in order to avoid such a situation, in the coating process, a complex in which a neutral ligand is not bonded (that is, a complex having a small number of ligands) is used, It is desirable to perform the forming process separately.

(D) A method of individually forming the electron injection layer for each light emitting layer.
In this method, first, an optimal organometallic complex (first organometallic complex) is selected for each of the R, G, and B light emitting layers, and each light emitting layer is individually coated using the selected complex. Make a liquid. Then, these coating liquids are selectively applied to the corresponding light emitting layer by using a droplet discharge method (inkjet method or the like), and an electron injection layer is individually formed in each light emitting layer by drying (the first injection layer) Step of forming an organometallic complex). And the organic material used as a neutral ligand is vapor-deposited to the complex formed in this way, and a neutral ligand is combined around a central atom (the formation process of a 2nd organometallic complex).
In the above-described methods (a) to (c), unlike the process for forming the hole injection / transport layer 70 and the light emitting layer 60 described above, the forming material is not selectively disposed only in the pixel region. The same kind of material is deposited on substantially the entire surface of the substrate 20. For this reason, although manufacture becomes easy, there may be a case where a desired electron injection effect cannot be obtained for a specific light emitting layer. On the other hand, in this method, the complex is formed by the droplet discharge method, and the coating liquid that is optimally adjusted is applied separately to each light emitting layer. Material design can be done individually. For this reason, the light emission efficiency can be maximized in all the light emitting layers. In addition, the color balance can be easily adjusted by designing each material independently as in the present method.

(E) A method of forming both a complex and an organic material to be a neutral ligand by coating.
In this method, first, an optimal organometallic complex (first organometallic complex) is selected for each of the R, G, and B light emitting layers, and the selected complex and an organic material that becomes a neutral ligand. Are mixed in a solvent to prepare a coating solution for each light emitting layer. Then, these coating liquids are selectively applied to the corresponding light emitting layers using a droplet discharge method, and an electron injection layer is individually formed in each light emitting layer by drying.
In this method, the neutral ligand is formed by a wet method in the method (d). For this reason, a structure similar to the method (d) is formed in this method. Further, in this method, since the electron injecting layer is entirely formed by a wet process, it is possible to wet the entire manufacturing process of the light emitting element by combining with the formation process of the hole injecting / transporting layer and the organic light emitting layer. It becomes.

  Subsequently, as shown in FIG. 10 (o), a cathode layer forming step is performed by vapor deposition to form the cathode 50. In this step, first, a low work function metal (for example, Ca) is formed on the entire exposed portion of the electron injection layer by vapor deposition or sputtering, and then a metal having a higher work function ( For example, Al) is deposited thereon. Thereby, the cathode 50 which consists of a laminated film of Ca and Al (or ITO) is formed. In this step, it is also possible to directly deposit Al (or ITO) on the electron injection layer 52 and to form the cathode 50 as a single layer film of Al (or ITO). In this case, the use of an organometallic complex whose central atom is Al, which is a constituent material of the cathode, for the electron injection layer 52 described above can enhance the adhesion at the interface.

  Finally, a sealing process is performed to form the sealing substrate 30. In this sealing step, the sealing substrate 30 and the substrate 20 are sealed with the adhesive 40 while the desiccant 45 is inserted inside the sealing substrate 30. In addition, it is preferable to perform this sealing process in inert gas atmosphere, such as nitrogen, argon, and helium.

Thus, in this embodiment, since the organometallic complex is used for the electron injection layer, the adhesion increases at the interface between both the cathode made of metal and the light emitting layer made of organic matter, and R (red), G ( It becomes possible to increase the light emission efficiency of all the light emission layers of green and blue (blue).
In particular, in the present embodiment, since more ligands than the valence of the central atom are coordinated with the organometallic complex, the electron injection layer is more deteriorated at the time of cathode formation or the like than the conventional one. It can be surely prevented.

  That is, the conventional organometallic complex described above is formed by coordination of a number of chelate ligands corresponding to the valence around the central atom, and the valence of the central atom is small like an alkali metal. And the number of surrounding ligands is reduced (for example, in the conventional case, the number of ligands is one), and depending on the film forming conditions of the cathode, the central atom is separated from the ligand as described above. May separate. However, since the coordination number of the central atom is generally larger than its valence, when a ligand other than a chelate ligand (for example, a neutral ligand such as a heterocyclic amine) is considered, More ligands than the valence can be coordinated to the central atom. For this reason, by actively coordinating a ligand other than the chelate ligand around the central atom as in this embodiment, due to the coordinate bond between these ligands and the central atom, The chemical stability of the complex can be increased. From a structural point of view, these ligands are arranged so as to surround the central atom, and this causes steric hindrance so that the central atom is stably held inside these ligands. Become. As described above, according to the present configuration, by improving the stability of the complex, it is possible to prevent impurities from being mixed into the light emitting layer, and thereby, an organic EL device having high emission efficiency and stable characteristics. Can be obtained. Furthermore, moisture resistance is also improved by increasing the stability of the complex.

[Electronics]
Next, a specific example of an electronic apparatus provided with the organic EL device of the present invention will be described.
The electronic apparatus of the present invention has the organic EL device as a display unit, and specifically, the one shown in FIG.
FIG. 11 is a perspective view showing an example of a mobile phone. In FIG. 11, reference numeral 1000 denotes a mobile phone body, and reference numeral 1001 denotes a display unit using the organic EL device.
Since the electronic device shown in FIG. 11 includes a display portion having the organic EL device, a long display and a bright display can be obtained.

In addition, this invention is not limited to the above-mentioned embodiment, It can implement in various deformation | transformation in the range which does not deviate from the meaning of this invention.
For example, although the polymer material is used for the light emitting layer 60 in the above embodiment, a low molecular material can be used instead. Further, the configuration of the circuit unit 11 described above is only an example, and other configurations can be adopted. Furthermore, in the above-described embodiment, an example in which the organic EL device of the present invention is used as a display device has been described. However, a solid light emitting layer is formed on the entire surface of the substrate, and this is used as a backlight (illumination device) such as a transmissive liquid crystal device. You can also

It is a schematic diagram which shows the wiring structure of the organic electroluminescent apparatus which concerns on one Embodiment of this invention. 2 is a plan view schematically showing the configuration of the organic EL device. FIG. It is sectional drawing which follows the AB line | wire of FIG. It is sectional drawing which follows the CD line of FIG. It is a principal part expanded sectional view of FIG. It is sectional drawing explaining the manufacturing method of an organic electroluminescent apparatus in order of a process. FIG. 7 is a cross-sectional view for explaining a step following the step in FIG. 6. FIG. 8 is a cross-sectional view for explaining a step following the step in FIG. 7. FIG. 9 is a cross-sectional view for explaining a step following the step in FIG. 8. FIG. 10 is a cross-sectional view for explaining a step following the step in FIG. 9. It is a perspective view which shows an example of the electronic device of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Organic EL device, 23 ... Pixel electrode (anode), 50 ... Cathode, 52 ... Electron injection layer, 60 ... Organic light emitting layer, 20 ... Substrate, 1000 ... Mobile phone (electronic device)

Claims (10)

An organic electroluminescent device manufacturing method comprising an organic light emitting layer forming step for forming an organic light emitting layer, an electron injection layer forming step for forming an electron injection layer, and a cathode forming step for forming a cathode,
The electron injection layer forming step is performed by applying a coating solution containing an organometallic complex having the same number of chelate ligands as the valence of the central atom and an organic material to be a neutral ligand, and performing heat treatment to form the organic The manufacturing method of the organic electroluminescent apparatus characterized by including the process of forming the organometallic complex film | membrane which has more ligands than the valence of a central atom above a light emitting layer.   2. The method of manufacturing an organic electroluminescent device according to claim 1, wherein the organic light emitting layer forming step is a step of arranging a plurality of types of organic light emitting materials having different emission colors.   The electron injection layer forming step selects a plurality of types of organometallic complexes corresponding to the plurality of types of organic light emitting materials, and a coating solution containing the selected types of organometallic complexes is disposed above the organic light emitting layer. The organic electroluminescent device manufacturing method according to claim 2, wherein the organic electroluminescent device is applied.   In the electron injection layer forming step, a plurality of types of organic metal complexes are selected corresponding to each of the plurality of types of organic light emitting materials, and a plurality of types of organic materials selected corresponding to each of the plurality of types of organic light emitting materials are selected. Forming a plurality of coating solutions containing each of the metal complexes, and applying the plurality of coating solutions containing each of the plurality of types of organometallic complexes to each of the plurality of types of organic light emitting materials by a droplet discharge method The manufacturing method of the organic electroluminescent apparatus of Claim 2 characterized by the above-mentioned.   5. The method of manufacturing an organic electroluminescence device according to claim 1, wherein a central atom of the organometallic complex is made of the same metal element as at least one constituent element of the cathode.   6. The organic electroluminescence device according to claim 1, wherein a central atom of the organometallic complex is any one of an alkali metal, an alkaline earth metal, magnesium, and a rare earth element. Method.   The method for producing an organic electroluminescent device according to claim 1, wherein the organometallic complex contained in the coating solution is a β-diketone complex.   The method for manufacturing an organic electroluminescent device according to claim 1, wherein the organic light emitting layer is made of a polymer material.   An organic electroluminescence device manufactured by the method according to claim 1. An electronic apparatus comprising the organic electroluminescence device according to claim 9.

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