JP2005079064A - Organic el device, manufacturing method of the same, and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic EL device capable of reducing manufacturing cost and securing the stability of a metal having a small work function at a manufacturing process, and to provide a manufacturing method of the same. <P>SOLUTION: On the organic EL device at least having a light-emitting layer 60 between a positive electrode 23 and a main negative electrode 50 in opposition, an electron injection layer is formed by painting a solution of bisacetylacetonate calcium complex on the surface of the light-emitting layer 60, and the main negative electrode 50 is formed by painting a PEDOT/PSS dispersion solution on the surface of the electron injection layer 52. Further, it is preferable to form an auxiliary negative electrode by painting a dispersion solution of metal fine particles on the surface of the main negative electrode 50. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to an organic EL device, a method for manufacturing the organic EL device, and an electronic apparatus.

  In general, an organic EL element constituting an organic EL device has a structure in which an organic light-emitting material is formed as a thin film between an anode and a cathode. Then, electrons and holes injected from both electrodes are recombined in the light emitting layer, and the excited energy is emitted as light emission. Since such an organic EL device has a high charge injection barrier between each electrode and the light-emitting layer, a hole injection layer (hole transport layer) that usually serves as an anode buffer layer and an electron injection that serves as a cathode buffer layer It has a laminated structure in which layers (electron transport layers) are provided. In this laminated structure, for example, lithium fluoride (LiF) or magnesium oxide (MgO) is known as an electron injection layer, and an organic EL device realizing low voltage driving by providing these is known. (For example, refer nonpatent literature 1). As the cathode, for example, calcium (Ca) having a small work function is used. Furthermore, a coating film made of highly conductive aluminum (Al) or the like is formed as a cap layer for the cathode.

  For the electron injection layer and cathode thin film formation, a vacuum vapor deposition method, which is a gas phase process, is mainly used. Since this vacuum vapor deposition method is performed in a vacuum atmosphere, the energy cost is high, and it is considered that it will be one of the factors that hinder the enlargement of the substrate when it is put into practical use as a display in the future. In addition, when using a vapor phase process, the underlying organic substance or substrate is exposed to a high heat environment, so there is a concern that problems such as degradation of light emission characteristics and substrate deformation may occur in the case of a material having poor heat resistance. Is done.

Therefore, a method for forming the electron injection layer and the cathode by a liquid phase process has been studied. In this method, a liquid containing the constituent materials of each layer is applied by spin coating or the like, and further baked to form an electron injection layer and a cathode. By employing such a liquid phase process, energy consumption can be reduced. Further, the applied liquid material can be baked at a relatively low temperature, and damage to an organic material or the like serving as a base can be reduced. As a method for forming a cathode by a liquid phase process, a method using a polymer solution in which conductive fine particles are dispersed has been proposed (for example, see Patent Document 1).
JP 2002-237389 A

  However, there are the following problems in forming the electron injection layer and the cathode in the liquid phase. First, since a metal having a low work function is used as a constituent material for the electron injection layer and the cathode, there is a problem that the material is unstable in a non-vacuum atmosphere. In the liquid phase process, a liquid material in which the constituent materials of each layer are dissolved in a solvent or a liquid material dispersed in a dispersion medium is used. However, depending on the solvent or dispersion medium to be used, there is a problem that the underlayer is eluted. is there. There is also a problem that when the liquid material is applied to the surface of the underlayer, the liquid material is difficult to wet and spread.

The present invention has been made in order to solve the above-mentioned problems, and can reduce the manufacturing cost, and can also ensure the stability in the manufacturing process for a metal having a small work function. An object of the present invention is to provide an apparatus and a manufacturing method thereof.
Another object is to provide an electronic device having good display characteristics.

In order to achieve the above object, an organic EL device of the present invention is an organic EL device having at least a light emitting layer between an opposing anode and a main cathode, and is between the light emitting layer and the main cathode. And an electron injection layer made of a metal complex having an electron injection property, wherein the main cathode is formed by applying a first liquid containing a conductive material.
According to this configuration, since the electron injection layer made of the metal complex is provided, the central atom is stably held by the ligand arranged so as to surround the central atom. Therefore, even when an electron injection layer is formed using a metal having a small work function, the stability of the metal in the manufacturing process can be ensured by using a complex having the metal as a central atom. Further, since the main cathode is formed by the liquid phase process, the vacuum condition as in the gas phase process becomes unnecessary, and the energy consumption can be reduced. Therefore, the manufacturing cost can be reduced.

The metal complex preferably has an alkali metal, alkaline earth metal, rare earth metal or transition metal as a central atom.
According to this configuration, since the electron injection layer is formed using a metal having a small work function, the electron injection property to the light emitting layer can be improved.

The metal complex is preferably a β-diketone complex.
In particular, the metal complex is preferably an acetylacetonate complex.
According to this configuration, the central atom is stably held by the ligand arranged so as to surround the central atom. Therefore, even when the electron injection layer is formed using a metal having a small work function, the stability of the metal in the manufacturing process can be ensured by using the metal as the central atom of the complex.

The organic EL device according to any one of claims 1 to 4, wherein the metal complex is a bisacetylacetonato calcium complex.
According to this configuration, since the electron injection layer is formed using calcium having a small work function, the electron injection property to the light emitting layer can be improved. In addition, by using calcium as the central atom of the complex, the stability of calcium in the production process can be ensured.

Meanwhile, the conductive material is preferably a conductive polymer compound.
In particular, the conductive material is preferably a polymer compound containing ethylenedioxythiophene.
The conductive material may be PEDOT / PSS.
According to these configurations, the main cathode can be fired at a relatively low temperature, and the thermal influence on the underlying layer can be reduced.

The conductive material may be fine metal particles.
The conductive material may be a mixed material of a conductive polymer compound and metal fine particles.
According to this configuration, the conductivity of the main cathode can be improved. In particular, by constituting the main cathode with a mixed material of a conductive polymer compound and metal fine particles, it becomes possible to ensure the conductivity of the main cathode while firing the main cathode at a relatively low temperature.

Further, it is desirable that an auxiliary cathode made of metal fine particles is formed on the surface of the main cathode.
According to this structure, the electroconductivity of the whole cathode can be improved.

The anode may be made of a conductive polymer.
According to this configuration, since the anode can be formed by a liquid phase process, a vacuum condition such as a gas phase process becomes unnecessary, and energy consumption can be reduced. Therefore, the manufacturing cost can be reduced.

On the other hand, the method for producing an organic EL device of the present invention is a method for producing an organic EL device having at least a light emitting layer between an opposing anode and main cathode, and an electron injecting property is formed on the surface of the light emitting layer. A step of forming an electron injection layer made of a metal complex having, and a step of forming the main cathode by applying a first liquid containing the constituent material of the main cathode to the surface of the electron injection layer; It is characterized by having.
In a metal complex, a central atom is stably hold | maintained by the ligand arrange | positioned so that a central atom may be surrounded. Therefore, even when an electron injection layer is formed using a metal having a small work function, the stability of the metal in the manufacturing process can be ensured by using a complex having the metal as a central atom. Further, since the main cathode is formed by a liquid phase process, a vacuum condition as in a gas phase process is not required, and energy consumption can be reduced. Therefore, the manufacturing cost can be reduced.

  The electron injection layer may be formed by depositing a metal complex having an electron injection property, but is preferably formed by applying a second liquid containing the metal complex having an electron injection property. .

The first liquid and / or the second liquid may be applied onto the light emitting layer by a droplet discharge device.
According to this configuration, the electron injection layer and / or the main cathode can be formed by accurately discharging a predetermined amount of liquid material to a predetermined position.

Moreover, it is desirable that the applied first liquid and / or second liquid be fired at 150 ° C. or lower.
According to this configuration, since the electron injection layer and / or the main cathode are fired at a relatively low temperature, it is possible to reduce the thermal effect on the underlayer.

The anode may be formed by applying a third liquid containing a conductive polymer.
According to this configuration, since the anode is formed by a liquid phase process, a vacuum condition such as a gas phase process becomes unnecessary, and energy consumption can be reduced. Therefore, the manufacturing cost can be reduced.

On the other hand, another organic EL device of the present invention is characterized by being manufactured using the method for manufacturing an organic EL device described above.
According to this configuration, it is possible to provide an organic EL device capable of reducing manufacturing costs.

On the other hand, an electronic apparatus according to the present invention includes the above-described organic EL device.
According to this configuration, an electronic device having good display characteristics can be provided.

  The present invention will be described in detail below. This embodiment shows a part of the present invention and does not limit the present invention, and can be arbitrarily changed within the scope of the technical idea of the present invention. Moreover, in each figure shown below, in order to make each layer and each member the size which can be recognized on drawing, the scale is varied for each layer and each member.

[Organic EL device]
First, an embodiment of the organic EL device of the present invention will be described.
(Equivalent circuit)
FIG. 1 is a schematic diagram showing a wiring structure of the organic EL device of the present embodiment. In FIG. 1, reference numeral 1 denotes the organic EL device. This organic EL device 1 is of an active matrix type using a thin film transistor (TFT) as a switching element, and has a plurality of scanning lines 101 and a plurality of signal lines 102 extending in a direction perpendicular to each scanning line 101. And a plurality of power supply lines 103 extending in parallel to each signal line 102, and a pixel region X is formed near each intersection of the scanning line 101 and the signal line 102. A data line driving circuit 100 including a shift register, a level shifter, a video line, and an analog switch is connected to the signal line 102. Further, a scanning line driving circuit 80 including a shift register and a level shifter is connected to the scanning line 101.

  Further, in each pixel region X, a switching TFT 112 to which a scanning signal is supplied to the gate electrode via the scanning line 101, and a storage capacitor for holding a pixel signal supplied from the signal line 102 via the switching TFT 112. 113, a driving TFT 123 to which a pixel signal held by the holding capacitor 113 is supplied to a gate electrode, and a driving current from the power supply line 103 when electrically connected to the power supply line 103 via the driving TFT 123 And a functional layer 110 sandwiched between the pixel electrode 23 and the common cathode (electrode) 50 are provided. The pixel electrode 23, the common cathode 50, and the functional layer 110 constitute a light emitting element, that is, an organic EL element.

  According to the organic EL device 1 having such a configuration, when the scanning line 101 is driven and the switching TFT 112 is turned on, the potential of the signal line 102 at that time is held in the holding capacitor 113, and The on / off state of the driving TFT 123 is determined according to the state. Then, a current flows from the power supply line 103 to the pixel electrode 23 through the channel of the driving TFT 123, and further a current flows to the common cathode 50 through the functional layer 110. Then, the functional layer 110 emits light according to the amount of current flowing therethrough.

(Plane configuration)
Next, specific modes of the organic EL device 1 of the present embodiment will be described with reference to FIGS. FIG. 2 is a plan view schematically showing the configuration of the organic EL device 1.

  As shown in FIG. 2, the organic EL device 1 according to the present embodiment includes a substrate 20 having optical transparency and electrical insulation, and a pixel electrode connected to a switching TFT (not shown) in a matrix on the substrate 20. A pixel electrode area (not shown) arranged in a shape, a power supply line arranged around the pixel electrode area and connected to each pixel electrode, and at least a substantially rectangular shape in plan view located on the pixel electrode area The pixel portion 3 (inside the one-dot chain line frame in FIG. 2) is provided. In the present embodiment, the pixel unit 3 includes an actual display area 4 (within the two-dot chain line in the figure) in the center and a dummy area 5 (one-dot chain line and two-dot chain line) arranged around the actual display area 4. Between the two areas).

In the actual display area 4, light emitting elements R, G, and B each having a pixel electrode are regularly arranged in the AB direction and the CD direction.
Further, scanning line driving circuits 80 and 80 are arranged on both sides of the actual display area 4 in FIG. The scanning line driving circuits 80 and 80 are provided on the lower layer side of the dummy region 5.

  Further, an inspection circuit 90 is disposed above the actual display area 4 in FIG. 2, and the inspection circuit 90 is disposed on the lower layer side of the dummy area 5. This inspection circuit 90 is a circuit for inspecting the operating state of the organic EL device 1 and includes, for example, inspection information output means (not shown) for outputting the inspection result to the outside, and is displayed during manufacture or at the time of shipment. It is configured to be able to inspect the quality and defects of the apparatus.

  The driving voltages of the scanning line driving circuit 80 and the inspection circuit 90 are applied from a predetermined power supply unit via the driving voltage conducting unit 310 (see FIG. 3) and the driving voltage conducting unit 340 (see FIG. 4). In addition, the drive control signal and the drive voltage to the scanning line drive circuit 80 and the inspection circuit 90 are supplied from a predetermined main driver that controls the operation of the organic EL device 1 and the drive control signal conduction unit 320 (see FIG. 3) and Transmission and application are performed via the drive voltage conduction unit 350 (see FIG. 4). The drive control signal in this case is a command signal from a main driver or the like related to control when the scanning line drive circuit 80 and the inspection circuit 90 output signals.

(Cross section configuration)
3 is a cross-sectional view taken along the line AB in FIG. 2, FIG. 4 is a cross-sectional view taken along the line CD in FIG. 2, and FIG. 5 is an enlarged cross-sectional view of the main part of FIG. As shown in FIGS. 3 and 4, the organic EL device 1 is formed by bonding a substrate 20 and a sealing substrate 30 through a sealing resin 40. In a region surrounded by the substrate 20, the sealing substrate 30, and the sealing resin 40, a getter agent 45 that absorbs moisture and oxygen is attached to the inner surface of the sealing substrate 30. The space is filled with nitrogen gas to form a nitrogen gas filled layer 46. Under such a configuration, moisture and oxygen are prevented from penetrating into the organic EL device 1, thereby extending the lifetime of the organic EL device 1.

In the case of a so-called top emission type organic EL device, the substrate 20 is configured to extract emitted light from the sealing substrate 30 side that is the opposite side of the substrate 20, so that both a transparent substrate and an opaque substrate can be used. it can. Examples of the opaque substrate include a thermosetting resin and a thermoplastic resin in addition to a ceramic sheet such as alumina and a metal sheet such as stainless steel that has been subjected to an insulation treatment such as surface oxidation.
In the case of a so-called bottom emission type organic EL device, since the emitted light is extracted from the substrate 20 side, a transparent or semi-transparent substrate 20 is employed. For example, glass, quartz, resin (plastic, plastic film) and the like can be mentioned, and a glass substrate is particularly preferably used. In the present embodiment, a bottom emission type in which emitted light is extracted from the substrate 20 side, and thus a transparent or translucent substrate 20 is used.

  As the sealing substrate 30, for example, a plate-like member having electrical insulation can be employed. Further, the sealing resin 40 is made of, for example, a thermosetting resin or an ultraviolet curable resin, and is preferably made of an epoxy resin which is a kind of thermosetting resin.

  Further, as shown in FIG. 5, a circuit unit 11 including a driving TFT 123 for driving the pixel electrode 23 and the like is provided on the substrate 20. The circuit unit 11 is formed on the substrate 20. That is, a base protective layer 281 mainly composed of SiO2 is formed on the surface of the substrate 20 as a base, and a silicon layer 241 is formed thereon. On the surface of the silicon layer 241, a gate insulating layer 282 mainly composed of SiO2 and / or SiN is formed.

  In the silicon layer 241, a region overlapping with the gate electrode 242 with the gate insulating layer 282 interposed therebetween is a channel region 241a. The gate electrode 242 is a part of the scanning line 101 (not shown). On the other hand, a first interlayer insulating layer 283 mainly composed of SiO 2 is formed on the surface of the gate insulating layer 282 that covers the silicon layer 241 and on which the gate electrode 242 is formed.

  Further, in the silicon layer 241, a low concentration source region 241b and a high concentration source region 241S are provided on the source side of the channel region 241a, while a low concentration drain region 241c and a high concentration drain are provided on the drain side of the channel region 241a. The region 241D is provided to form a so-called LDD (Light Doped Drain) structure. Among these, the high-concentration source region 241S is connected to the source electrode 243 through a contact hole 243a that opens over the gate insulating layer 282 and the first interlayer insulating layer 283. The source electrode 243 is configured as a part of the above-described power supply line 103 (see FIG. 1, extending in the direction perpendicular to the paper surface at the position of the source electrode 243 in FIG. 5). On the other hand, the high-concentration drain region 241D is connected to the drain electrode 244 made of the same layer as the source electrode 243 through a contact hole 244a that opens through the gate insulating layer 282 and the first interlayer insulating layer 283.

The upper layer of the first interlayer insulating layer 283 on which the source electrode 243 and the drain electrode 244 are formed is covered with a second interlayer insulating layer 284 mainly composed of, for example, an acrylic resin component. The second interlayer insulating layer 284 can be made of a material other than an acrylic insulating film, such as SiN or SiO2. A pixel electrode 23 made of ITO is formed on the surface of the second interlayer insulating layer 284 and is connected to the drain electrode 244 through a contact hole 23a provided in the second interlayer insulating layer 284. Yes. That is, the pixel electrode 23 is connected to the high concentration drain region 241D of the silicon layer 241 through the drain electrode 244.
The layers from the substrate 20 to the second interlayer insulating layer 284 described above constitute the circuit unit 11.

  Note that TFTs (driving circuit TFTs) included in the scanning line driving circuit 80 and the inspection circuit 90 (see FIG. 2), that is, for example, an N-channel type that constitutes an inverter included in the shift register among these driving circuits or The P-channel TFT has the same structure as the driving TFT 123 except that it is not connected to the pixel electrode 23.

  The surface of the second interlayer insulating layer 284 on which the pixel electrode 23 is formed is composed of the pixel electrode 23, a lyophilic control layer 25 mainly composed of a lyophilic material such as SiO2, and an acrylic resin or a polyimide resin. It is covered with the organic bank layer 221. In addition, “lyophilic” of the lyophilic control layer 25 in the present embodiment means that the lyophilic property is higher than at least materials such as acrylic resin and polyimide resin constituting the organic bank layer 221. And The opening 25a provided in the lyophilic control layer 25 and the inside of the opening 221a provided in the organic bank layer 221 constitute a pixel region. A BM (black matrix) (not shown) in which metallic chromium is formed by sputtering or the like is positioned between the organic bank layer 221 and the lyophilic control layer 25 at the boundary between the color display regions (pixel regions). Is formed.

(Light emitting element)
Light emitting elements (organic EL elements) R, G, and B are provided above the pixel electrode 23 in each pixel region. The light emitting elements R, G, and B include a pixel electrode 23 that functions as an anode, a hole injection layer 70 that injects / transports holes from the pixel electrode 23, and a light emitting layer 60 (60R, 60G made of an organic EL material). 60B) and the common cathode 50 are formed in order. In the light emitting elements R, G, and B having such a configuration, the holes injected from the hole injection layer 70 and the electrons transmitted from the common cathode 50 are combined in the light emitting layer 60. As a result, red, green or blue light is emitted.

  The pixel electrode 23 functioning as an anode is formed of a transparent conductive material because it is a bottom emission type in this example. ITO is suitable as the transparent conductive material, but other than this, for example, indium oxide / zinc oxide based amorphous transparent conductive film (Indium Zinc Oxide: IZO / registered trademark)) (Idemitsu Kosan) Etc.) can be used. In the present embodiment, ITO is used. In the case of the top emission type, it is not necessary to use a material having a light transmission property. For example, Al or the like may be provided on the lower layer side of ITO and used as a reflection layer.

As a material for forming the hole injection layer 70, in particular, a dispersion of 3,4-polyethylenediosithiophene / polystyrene sulfonic acid (PEDOT / PSS) [trade name; Bytron-p: manufactured by Bayer], That is, a material obtained by dispersing 3,4-polyethylenedioxythiophene in polystyrene sulfonic acid as a dispersion medium and further dissolving it in a polar solvent such as water or isopropyl alcohol is preferably used. The material for forming the hole injection layer 70 is not limited to those described above, and various materials can be used. For example, a material obtained by dispersing polystyrene, polypyrrole, polyaniline, polyacetylene or a derivative thereof in an appropriate dispersion medium such as the aforementioned polystyrene sulfonic acid can be used.
Note that the pixel electrode 23 described above can also be made of a conductive polymer such as PEDOT / PSS. In this case, since the pixel electrode 23 can be formed by a liquid phase process, a vacuum condition such as a gas phase process becomes unnecessary, and energy consumption can be reduced. Moreover, it becomes possible to form an anode having conductivity and hole injection properties by a single liquid phase process, and the formation of the hole injection layer can be omitted. Therefore, the manufacturing cost can be reduced.

  As a material for forming the light emitting layer 60, a known light emitting material capable of emitting fluorescence or phosphorescence is used. In the present embodiment, the emission wavelength bands are formed corresponding to the three primary colors of light in order to perform full color display. That is, one pixel is composed of three light emitting layers, a light emitting layer 60R corresponding to red, a light emitting layer 60G corresponding to green, and a light emitting layer 60B corresponding to blue. As a result, the organic EL device 1 performs full color display as a whole.

Specific examples of the material for forming the light emitting layer 60 include (poly) fluorene derivative (PF), (poly) paraphenylene vinylene derivative (PPV), polyphenylene derivative (PP), polyparaphenylene derivative (PPP), and polyvinylcarbazole (PVK). ), Polythiophene derivatives, and polysilanes such as polymethylphenylsilane (PMPS) are preferably used. In addition, these polymer materials include polymer materials such as perylene dyes, coumarin dyes, rhodamine dyes, rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, Nile red, coumarin 6, and quinacridone. It can also be used by doping a low molecular weight material such as.
The “polymer” means a polymer having a molecular weight higher than that of a so-called “low molecule” having a molecular weight of about several hundreds. The above-mentioned polymer material includes a polymer generally called a polymer and having a molecular weight of 10,000 or more. In addition, a low polymer called an oligomer having a molecular weight of 10,000 or less is included.

  In this embodiment, MEHPPV (poly (3-methoxy 6- (3-ethylhexyl) paraphenylenevinylene) is used as a material for forming the red light emitting layer 60R, and polydioctylfluorene and F8BT are used as the material for forming the green light emitting layer 60R. Polydioctylfluorene is used as a material for forming the blue light-emitting layer 60R in the mixed solution of (dioctylfluorene and benzothiadiazole alternating copolymer). For example, the thickness of the blue light emitting layer 60B is preferably about 60 to 70 nm, although there is no limitation and the preferred thickness varies for each color.

(Electron injection layer)
An electron injection layer 52 is provided on the surface of the light emitting layer 60 and the organic bank layer 221. The electron injection layer 52 has a function of increasing the efficiency of electron injection from the main cathode 50 to the light emitting layer 60. The thickness of the electron injection layer 52 is preferably about 0.5 nm to 10 nm, and particularly preferably about 2 nm. This is because when the thickness is less than 0.5 nm, the function as the electron injection layer 52 is not sufficiently exhibited, and when the thickness exceeds 10 nm, the driving voltage becomes so high that it cannot be ignored.

  An organometallic complex can be adopted as the electron injecting material constituting the electron injecting layer. As chelate ligands constituting this organometallic complex, acetylacetone (acac), dipipaloylmethane (dpm), hexafluoroacetylacetone (hfa), 2,2,6,6, -tetramethyl-3,5-octane Β-diketone ligands such as diacetone (TMOD), thenoyltrifluoroacetone (TTA), 1-phenyl-3-isohept-1,3-propanedione (trade names LIX54, LIX51; Henkel), 8 -Quinolinol ligands such as quinolinol (oxin), 2-methyl-8-quinolinol, trioctyl phosphine oxide (TOPO), tributyl phosphate (TBP), isobutyl methyl ketone (MBK), bis (2-ethylhexyl) ) Phosphoric acid ligands such as phosphoric acid (D2EHPA), acetic acid, benzoic acid, etc. Ligands carboxylic acid, it can be preferably used diphenylthiocarbazone ligands like. Among them, a complex having a β-diketone-based ligand (β-diketone complex) is an acidic reagent and a multidentate ligand based on an oxygen atom, so that a stable complex can be formed.

In addition, a metal element such as an alkali metal, an alkaline earth metal, a rare earth metal, or a transition metal can be used as a central atom constituting the organometallic complex. For example, Li, Na, Cs, etc. can be adopted as the alkali metal, Ca, Ba, Sr, etc. can be adopted as the alkaline earth metal, and Sm, Tb, Er, etc. can be adopted as the rare earth metal. In particular, it is desirable to employ a metal having a work function of 3.0 eV or less. Accordingly, electrons can be emitted at a low voltage, and the light emitting layer can emit light at a low voltage.
As a specific organometallic complex, it is desirable to employ a bisacetylacetonato / calcium complex (Ca (acac) 2) which is an acetylacetonato metal complex. A metal element having a low work function such as calcium (work function; 2.6 eV) is excellent in electron injection property, but is unstable in a non-vacuum atmosphere. Therefore, by using a complex having a chelate ligand such as acetylacetonato, it is possible to ensure the stability in the manufacturing process while maintaining the electron injection property.

Further, as the electron injecting material constituting the electron injecting layer 52, it is also possible to employ a metal halide or oxide. As the metal, a metal element such as an alkali metal, an alkaline earth metal, a rare earth metal, or a transition metal can be used. The metal halide is preferably a metal fluoride, but may be other metal chlorides or metal bromides. And it is desirable to use lithium fluoride (LiF) as a specific metal halide.
In addition to an inorganic lithium compound such as lithium fluoride, an organic lithium compound such as lithium benzoate or lithium acetate can be employed as the electron injecting material constituting the electron injection layer 52.

In addition, as the electron injecting material constituting the electron injecting layer 52, a plurality of types of organometallic complexes can be mixed and used. For example, when a plurality of types of light emitting layers 60 of R, G, and B are provided in one pixel as in the present embodiment, an optimum organometallic complex is mixed into each light emitting layer 60 and electrons are mixed. The injection layer 52 may be configured. In this case, the luminous efficiency can be further increased by complementing the functions of the complexes. Alternatively, a separate electron injection layer 52 may be formed on the surface of each light emitting layer 60, and an optimum metal complex for each light emitting layer 60 may be adopted as the electron injecting material constituting each electron injection layer 52. In this case, it is possible to design an optimum material for each light emitting layer 60 and to easily adjust the color balance of each light emitting layer 60.
In particular, for a blue light-emitting element, it is preferable to employ a lithium compound together with or in place of the above-described organometallic complex. Thereby, the blue light emitting layer 60B can emit light at a low voltage.

  In addition, the above complex can be used alone or in combination with a conventionally known electron injecting material. Examples of such known electron injecting materials include cyclopentadiene derivatives, oxadiazole derivatives, bisstyrylbenzene derivatives, p-phenylene compounds, phenanthroline derivatives, triazole derivatives, and the like.

  Note that the light-emitting layer may be formed by mixing the electron injecting material described above with the constituent material of the light-emitting layer. In this case, it is possible to form a light emitting layer having light emitting properties and electron injecting properties by a single liquid phase process, and the formation of the electron injecting layer can be omitted. Therefore, the manufacturing cost can be reduced.

(Common cathode)
As shown in FIGS. 2 to 4, the common cathode 50 has an area larger than the total area of the actual display region 4 and the dummy region 5 and is formed so as to cover each. As shown in FIG. 5, the common cathode is composed of a main cathode 50 in contact with the surface of the electron injection layer 52 and an auxiliary cathode formed on the surface of the main cathode 50. The film thickness of the main cathode 50 is preferably 100 to 1000 nm, particularly preferably about 200 to 500 nm.

  The main cathode 50 is made of a conductive material. As the conductive material constituting the main cathode 50, a conductive polymer material can be employed. In particular, it is desirable to employ a polymer compound containing ethylenedioxythiophene as the conductive polymer material. Specifically, 3,4-polyethylenedioxythiophene / polystyrene sulfonic acid (PEDOT / PSS = 1/20) which is also a constituent material of the hole injection layer 70 [trade name; Bytron-p: Bayer Use a dispersion liquid manufactured by KK This is obtained by dispersing 3,4-polyethylenedioxythiophene in polystyrene sulfonic acid as a dispersion medium.

  Further, as the conductive material constituting the main cathode 50, it is also possible to adopt conductive metal fine particles instead of the above-described conductive polymer or together with the conductive polymer. In particular, when the main cathode 50 is composed of a mixed material of a conductive polymer and metal fine particles, it is possible to ensure the conductivity of the main cathode 50 while firing the main cathode 50 at a relatively low temperature. . Specifically, Au, Ag, Al or the like can be used as the metal fine particles. In addition to metal fine particles such as Au and Ag, a carbon paste can be used.

  In order to increase the conductivity of the common cathode 50 as a whole, it is desirable to provide an auxiliary cathode on the surface of the main cathode 50. The auxiliary cathode also has a function of covering the main cathode 50 and protecting it from oxygen and moisture. The auxiliary cathode is composed of conductive fine metal particles. The metal fine particles are not particularly limited as long as they are chemically stable conductive materials, and arbitrary materials such as metals and alloys can be used. Specifically, Al (aluminum) or Au (gold) can be used. ), Ag (silver) and the like are preferably used. The thickness of the auxiliary cathode is preferably about 100 nm to 500 nm, particularly about 200 nm. If the thickness is less than 100 nm, the protective function may not be sufficiently obtained. If the thickness exceeds 500 nm, the thermal load during production increases, and the light emitting layer 60 may be adversely affected such as deterioration or alteration. In the present embodiment, the auxiliary cathode is formed of Ag. In particular, in the case of a top emission type organic EL device, it is possible to form a sufficiently thin auxiliary cathode so as to have translucency, or to provide conductivity such as ITO having translucency. It is also possible to form an auxiliary cathode using a material.

[Method for Manufacturing Organic EL Device]
Next, an example of a method for manufacturing the organic EL device 1 according to this embodiment will be described with reference to FIGS. Each cross-sectional view shown in FIGS. 6 and 7 corresponds to the cross-sectional view taken along the line AB in FIG. 2 and is shown in the order of each manufacturing process.
First, as shown in FIG. 6A, the pixel electrode 23 is formed on the surface of the circuit unit 11 on the substrate 20. Specifically, first, a conductive film made of a conductive material such as ITO is formed so as to cover the entire surface of the substrate 20. At that time, the contact hole 23a of the second interlayer insulating layer 284 is filled with a conductive material to form a contact. The pixel electrode 23 is formed by patterning this conductive film, and is electrically connected to the drain electrode 244 of the driving TFT 123 through a contact. At the same time, a dummy pattern 26 in the dummy area is also formed. 3 and 4, the pixel electrode 23 and the dummy pattern 26 are collectively referred to as the pixel electrode 23.

  The dummy pattern 26 is formed in an island shape like the pixel electrode 23 formed in the actual display area, but is not connected to the lower metal wiring via the second interlayer insulating layer 284. . Of course, the shape may be different from that of the pixel electrode 23 formed in the display area. In this case, the dummy pattern 26 includes at least the one located above the drive voltage conducting portion 310 (340).

  Next, as shown in FIG. 6B, a lyophilic control layer 25 that is an insulating layer is formed on the pixel electrode 23, the dummy pattern 26, and the second interlayer insulating layer 284. In the pixel electrode 23, the lyophilic control layer 25 is formed so as to partially open, and holes can be transferred from the pixel electrode 23 in the opening 25a (see also FIG. 3). Subsequently, in the lyophilic control layer 25, a BM (not shown) is formed in a concave portion formed between two different pixel electrodes 23. Specifically, a film is formed on the concave portion of the lyophilic control layer 25 by sputtering using metallic chromium.

Next, as shown in FIG. 6C, an organic bank layer 221 is formed so as to cover a predetermined position of the lyophilic control layer 25, specifically, the BM. As a specific method for forming the organic bank layer 221, for example, an organic layer is formed by applying a resist such as acrylic resin or polyimide resin dissolved in a solvent by various coating methods such as a spin coating method or a dip coating method. To do. The constituent material of the organic layer may be any material as long as it does not dissolve in the ink solvent described later and is easily patterned by etching or the like.
Subsequently, the organic layer is patterned using a photolithography technique and an etching technique, and a bank opening 221a is formed in the organic layer, thereby forming an organic bank layer 221 having a wall surface in the opening 221a. In this case, the organic bank layer 221 includes at least a layer positioned above the drive control signal conducting unit 320.

  Next, a region showing lyophilicity and a region showing liquid repellency are formed on the surface of the organic bank layer 221. In the present embodiment, each region is formed by plasma processing. The plasma treatment includes a preliminary heating step, and an ink repellency step in which the upper surface of the organic bank layer 221 and the wall surface of the opening 221a, and the electrode surface 23c of the pixel electrode 23 and the upper surface of the lyophilic control layer 25 are made lyophilic. And an ink repellent process for making the upper surface of the organic bank layer and the wall surface of the opening liquid repellent, and a cooling process.

  That is, the base material (substrate 20 including a bank or the like) is heated to a predetermined temperature, for example, about 70 to 80 ° C., and then plasma treatment using oxygen as a reaction gas at atmospheric pressure (O 2 plasma treatment) is performed as an ink-philic process. Do. Next, as an ink repellent step, plasma treatment using CF4 as a reactive gas under atmospheric pressure (CF4 plasma treatment) is performed, and then the substrate heated for the plasma treatment is cooled to room temperature, The lyophilic property and the liquid repellency are imparted to a predetermined location.

  In this CF4 plasma treatment, the electrode surface 23c of the pixel electrode 23 and the lyophilic control layer 25 are also somewhat affected. However, ITO that is the material of the pixel electrode 23 and the constituent material of the lyophilic control layer 25 Since SiO 2, TiO 2, etc. are poor in affinity to fluorine, the hydroxyl group imparted in the ink-philic process is not substituted with the fluorine group, and the lyophilic property is maintained.

Next, the hole injection layer 70 is formed by a hole injection layer formation step. In this hole injection layer forming step, an inkjet method is particularly preferably employed as the droplet discharge method. That is, by this ink jet method, the hole injection layer forming material is selectively disposed on the electrode surface 23c and applied. Thereafter, drying treatment and heat treatment are performed to form the hole injection layer 70 on the pixel electrode 23. As a material for forming the hole injection layer 70, for example, a material in which the PEDOT / PSS is dissolved in a polar solvent such as water or isopropyl alcohol is used.
Note that the pixel electrode 23 described above can also be made of a conductive polymer such as PEDOT / PSS. In this case, since the pixel electrode 23 can be formed by a liquid phase process, a vacuum condition such as a gas phase process becomes unnecessary, and energy consumption can be reduced. Moreover, it becomes possible to form an anode having conductivity and hole injection properties by a single liquid phase process, and the formation of the hole injection layer can be omitted. Therefore, the manufacturing cost can be reduced.

  Here, in forming the hole injection layer 70 by the ink jet method, first, a hole injection layer forming material is filled in the ink jet head (not shown), and the ink jet head and the base material (substrate 20) are moved relative to each other. However, the discharge nozzle of the inkjet head is made to face the electrode surface 23c located in the opening 25a formed in the lyophilic control layer 25. Then, a droplet whose liquid amount per droplet is controlled is discharged from the discharge nozzle to the electrode surface 23c. Next, the discharged droplets are dried, and the hole injection layer 70 is formed by evaporating the dispersion medium and the solvent contained in the hole injection layer material.

At this time, the droplet discharged from the discharge nozzle spreads on the electrode surface 23c that has been subjected to the lyophilic treatment, and fills the opening 25a of the lyophilic control layer 25. On the other hand, droplets are repelled and do not adhere to the upper surface of the organic bank layer 221 that has been subjected to ink repellent treatment. Therefore, even if the liquid droplet is displaced from a predetermined discharge position and a part of the liquid droplet is applied to the surface of the organic bank layer 221, the surface is not wetted by the liquid droplet, and the repelled liquid droplet is not lyophilic. It is drawn into the opening 25 a of the property control layer 25.
In addition, after this hole injection layer formation process, it is preferable to carry out in inert gas atmospheres, such as nitrogen atmosphere and argon atmosphere, in order to prevent oxidation and moisture absorption of various formation materials and the formed element.

  Next, as shown in FIG. 7D, the light emitting layer 60 is formed by the light emitting layer forming step. In this light emitting layer forming step, an ink jet method, which is a droplet discharge method, is suitably employed as in the formation of the hole injection layer 70 described above. That is, the light emitting layer forming material is discharged onto the hole injection layer 70 by an ink jet method, and then a drying process and a heat treatment are performed, thereby forming the light emitting layer 60 in the opening 221a formed in the organic bank layer 221. To do. The light emitting layer 60 is formed for each color. Note that by using the ink jet method (droplet discharge method), the material for forming the light emitting layer 60 can be selectively disposed only in a predetermined position, that is, the pixel region, and the discharge amount can be set at each position. It is also possible to change. In the light emitting layer forming step, a nonpolar solvent that is insoluble in the hole injecting layer 70 is used as a solvent used for the light emitting layer forming material in order to prevent re-dissolution of the hole injecting layer 70. On the other hand, the firing temperature is preferably in the range of 150 ° C. to 200 ° C., particularly about 180 ° C. When the temperature is lower than 150 ° C., the forming material is not sufficiently cured. Therefore, when the forming material of the blue light emitting layer is provided thereon as described later, the forming materials may be mixed with each other. Further, if the temperature exceeds 200 ° C., the forming material may be deteriorated and deteriorated by heat.

(Formation of electron injection layer)
Next, as shown in FIG. 7E, the electron injection layer 52 is formed so as to cover the light emitting layer 60 and the organic bank layer 221. The electron injection layer 52 is formed by applying a liquid containing an electron injecting material. When the Ca (acac) 2 is employed as the electron injecting material, it is dissolved in a polar substance such as water to prepare a liquid to be applied. The concentration of Ca (acac) 2 is, for example, 1 wt%. Even when an electron-injecting material such as Na, K, Rb, or Cs fluoride that exhibits water solubility is employed, it can be dissolved in a polar substance such as water. As described above, when a polar substance is employed as the dispersion medium or the solvent, it is possible to suppress re-dissolution of the light emitting layer 60 with respect to the applied liquid material. When the light emitting layer 60 is exceptionally eluted into the polar substance, a nonpolar substance such as toluene, xylene, benzene, hexane, cyclohexane, tetradecane, or isooctane may be used as the dispersion medium or solvent.

  Then, the liquid material produced as described above is applied to the surfaces of the light emitting layer 60 and the organic bank layer 221. A spin coating method or the like can be adopted as the coating method, but an ink jet method can also be adopted in the same manner as the light emitting layer 60 and the hole injection layer 70. Further, the applied liquid is dried and baked to form a film of the electron injection layer 52. The deposition temperature of the electron injection layer 52 is desirably 150 ° C. or lower. This is because if the heat treatment is performed at a temperature exceeding 150 ° C., the function of the light emitting layer 60 composed of an organic substance may be deteriorated. The electron injection layer 52 can also be formed by a vapor deposition method. In this case, an electron injecting material such as Ca (acac) 2 is evaporated in a vacuum atmosphere and deposited on the surfaces of the light emitting layer 60 and the organic bank layer 221 to form the electron injecting layer 52.

(Formation of cathode)
Next, the main cathode 50 is formed on the surface of the electron injection layer 52. The main cathode 50 is formed by applying a liquid material containing a conductive material. When the PEDOT / PSS is employed as the conductive material, 3,4-polyethylenedioxythiophene is dispersed in polystyrene sulfonic acid as a dispersion medium, and further dissolved in a polar solvent such as water or isopropyl alcohol. When metal fine particles are employed as the conductive material, polar substances such as water, methanol, ethanol, propanol, isopropyl alcohol (IPA), and dimethyl ketone are used as the dispersion medium.

  Then, the liquid material produced as described above is applied to the surfaces of the light emitting layer 60 and the organic bank layer 221. The liquid material can be applied by a spin coating method, an ink jet method, or the like, similarly to the formation of the electron injection layer 52. Further, the coating of the main cathode 50 is formed by drying and baking the applied liquid. The film forming temperature of the main cathode 50 is desirably 150 ° C. or lower, similarly to the film forming temperature of the electron injection layer 52. In this respect, if PEDOT / PSS is adopted as the conductive material, it is possible to perform baking under conditions of about 100 ° C. × 10 minutes, and damage to the light emitting layer 60 can be suppressed.

  Next, an auxiliary cathode is formed so as to cover the surface of the main cathode 50. The auxiliary cathode is formed by applying a liquid material containing a conductive material. The liquid is prepared by dispersing fine metal particles such as Au and Ag in a dispersion medium such as water, methanol, ethanol, propanol, isopropyl alcohol (IPA), and dimethyl ketone. As with the formation of the main cathode 50, a spin coating method, an ink jet method, or the like can be employed for applying the liquid material. Furthermore, the coating of the auxiliary cathode is formed by drying and baking the applied liquid. The film forming temperature of the auxiliary cathode is desirably 150 ° C. or lower, similarly to the film forming temperature of the main cathode 50.

When a liquid material containing the constituent materials of the main cathode 50 and the auxiliary cathode is applied by a spin coating method, a film is formed on almost the entire surface of the substrate 20 without selectively forming the forming material only in the pixel region. Will be. Therefore, prior to the subsequent sealing step, the coating of the main cathode 50 and the auxiliary cathode formed on the periphery of the substrate is removed as shown in FIG. Further, by using a mask or the like at the time of film formation, the film may not be formed on the periphery of the substrate.
Thus, the common cathode 50 is formed.

Thereafter, as shown in FIG. 7F, the surface of the substrate 20 is sealed with the sealing substrate 30. In this sealing step, the sealing substrate 30 with the getter agent 45 attached inside is bonded to the substrate 20 with the sealing resin 40. This sealing step is preferably performed in an inert gas atmosphere such as nitrogen, argon or helium. As a result, the inert gas is hermetically sealed in the space surrounded by the substrate 20, the sealing substrate 30, and the sealing resin 40.
Thus, the organic EL device 1 according to this embodiment is formed.

  As described in detail above, in the organic EL device and the manufacturing method thereof according to the present embodiment, an electron injection layer made of a metal complex having electron injection properties is formed. According to this configuration, since the ligand of the metal complex is disposed so as to surround the central atom, this becomes a steric hindrance and the central atom is stably held inside these ligands. Therefore, it is possible to ensure the stability of the low work function metal in the manufacturing process without requiring a step of covering the surface of the low work function metal with a stable metal or a step of sealing the low work function metal in a stable atmosphere. it can. Therefore, the manufacturing process is simplified and the manufacturing cost can be reduced. Further, by adopting a stable complex, it is possible to prevent impurities from being mixed into the light emitting layer, so that moisture resistance is improved. Therefore, an organic EL device having high luminous efficiency and stable characteristics can be obtained.

  Further, the electron injection layer and / or the main cathode are formed by a liquid phase process. According to this configuration, a vacuum condition such as a vapor phase process is not necessary, and energy consumption can be reduced, so that manufacturing costs can be reduced. Further, since there is no restriction on the substrate size, it is effective for manufacturing a large screen display. Furthermore, since a vapor deposition mask is not required, it is effective for manufacturing a high-definition display. In addition, it is effective for the development of a flexible display using a plastic substrate with low heat resistance.

  If the pixel electrode 23 is configured by PEDOT / PSS, it is possible to form an anode having conductivity and hole injection by a single liquid phase process. Further, if the light emitting layer 60 is made of a light emitting polymer material and an electron injecting material, the light emitting layer 60 having light emitting properties and electron injecting properties can be formed by a single liquid phase process. And if the common cathode 50 is formed by a liquid phase process as mentioned above, the whole light emitting element can be formed by a liquid phase process. This can greatly reduce the manufacturing cost and is very effective for manufacturing a large-screen and high-definition display.

[Electronics]
Next, the electronic device of the present invention will be described with reference to FIG. FIG. 8 is a perspective view of a mobile phone provided with the organic EL device of this embodiment. In FIG. 8, reference numeral 1000 indicates a mobile phone body, and reference numeral 1001 indicates a display unit. Since the mobile phone 1000 includes the display unit 1001 including the organic EL device according to the present embodiment, it can exhibit good display characteristics.

  In addition, this invention is not limited to the above-mentioned embodiment, It can implement in various deformation | transformation in the range which does not deviate from the meaning of this invention. For example, although the polymer material is used for the light emitting layer 60 in the above embodiment, a low molecular material can be used instead. Further, the configuration of the circuit unit 11 described above is only an example, and other configurations can be adopted.

A pixel electrode made of ITO was formed on the upper surface of the glass substrate, a hole injection layer made of PEDOT / PSS was formed on the upper surface, and a light emitting layer made of a polymer material was formed on the upper surface.
On the upper surface of the light emitting layer, an electron injection layer was formed by vacuum-depositing a calcium acetylacetonate complex (Ca (acac) 2) as an electron injection material. For the vacuum deposition, a vacuum deposition apparatus disposed in a glove box in an argon atmosphere was used. The degree of vacuum at the start of vapor deposition was about 1 × 10 −6 torr, and an electron injection layer having a thickness of about 0.5 to 10 nm was formed at a film formation rate of 1 angstrom / second.
Moreover, the main cathode was formed by apply | coating the PEDOT / PSS dispersion liquid which is an electroconductive material on the upper surface of an electron injection layer. Specifically, spin coating was performed under the conditions of a rotation speed of 500 rpm and a rotation time of 60 seconds, followed by baking at 100 ° C. for 10 minutes to form a main cathode having a thickness of about 300 nm. Thereafter, the whole was sealed with a sealing substrate.
The organic EL device thus formed emitted light well at a voltage of 10 V or less.

The layers up to the light emitting layer were formed in the same manner as in Example 1.
An electron injection layer was formed by applying a solution of Ca (acac) 2 on the top surface of the light emitting layer. Specifically, a N (N-dimethylformamide) solution of Ca (acac) 2 adjusted to 1 wt% is spin-coated under the conditions of a rotation speed of 100 rpm and a rotation time of 90 seconds, and further baked at 100 ° C. for 10 minutes. Then, an electron injection layer having a thickness of about 0.5 to 10 nm was formed.
In the same manner as in Example 1, a PEDOT / PSS dispersion was spin coated to form a main cathode, and the whole was sealed.
The organic EL device thus formed emitted light well at a voltage of 10 V or less.

The layers up to the light emitting layer were formed in the same manner as in Example 1.
Similarly to Example 2, an electron injection layer was formed by spin coating a solution of Ca (acac) 2.
Further, as in Example 2, a PEDOT / PSS dispersion was spin coated to form a main cathode.
In addition, an auxiliary cathode was formed by applying a dispersion of Ag fine particles on the upper surface of the main cathode. Specifically, an Ag ultrafine particle dispersion obtained by adding sodium citrate to an aqueous silver nitrate solution is spin-coated under the conditions of a rotation speed of 4000 rpm and a rotation time of 60 seconds, and further baked at 120 ° C. for 1 hour. Thus, an auxiliary cathode having a film thickness of 400 nm was formed. Thereafter, the whole was sealed with a sealing substrate.
The organic EL device thus formed emitted light well at a voltage of 10 V or less. In addition, the light emission state better than the case of Example 2 was obtained.

The layers up to the light emitting layer were formed in the same manner as in Example 1.
Similarly to Example 2, an electron injection layer was formed by spin coating a solution of Ca (acac) 2.
Further, a mixed liquid of the Ag fine particle dispersion and the PEDOT / PSS dispersion was applied to the upper surface of the electron injection layer to form a main cathode. Specifically, the Ag fine particle dispersion and the PEDOT / PSS dispersion are mixed at a ratio of 1: 1, spin coating is performed under the conditions of a rotation speed of 4000 rpm and a rotation time of 60 seconds, and firing at 120 ° C. for 1 hour. To form a main cathode having a film thickness of 400 nm.
The organic EL device thus formed emitted light well at a voltage of 10 V or less.

A PEDOT / PSS dispersion was applied onto the cleaned glass substrate to form an anode. Specifically, the PEDOT / PSS dispersion was applied by spin coating and baked at 200 ° C. for 10 minutes to form an anode with a thickness of 70 nm.
Thereafter, in the same manner as in Example 3, a light emitting layer, an electron injection layer, a main cathode, and an auxiliary cathode were formed, and the whole was sealed.
The organic EL device thus formed emitted light well at a voltage of 10 V or less.

It is a schematic diagram which shows the wiring structure of the organic electroluminescent apparatus of embodiment. It is a top view which shows typically the structure of the organic electroluminescent apparatus of embodiment. It is side surface sectional drawing which follows the AB line | wire of FIG. It is side surface sectional drawing which follows the CD line of FIG. It is a principal part expanded sectional view of FIG. It is sectional drawing explaining the manufacturing method of an organic electroluminescent apparatus in order of a process. It is sectional drawing explaining the manufacturing method of an organic electroluminescent apparatus in order of a process. It is a perspective view of a mobile phone provided with the organic EL device of the embodiment.

Explanation of symbols

  23 anode 50 main cathode 52 electron injection layer 60 light emitting layer

Claims (20)

An organic EL device having at least a light emitting layer between an opposing anode and a main cathode,
Between the light emitting layer and the main cathode, an electron injection layer made of a metal complex having an electron injection property,
The organic EL device, wherein the main cathode is formed by applying a first liquid containing a conductive material. The organic EL device according to claim 1, wherein the metal complex has an alkali metal, an alkaline earth metal, a rare earth metal, or a transition metal as a central atom. The organic EL device according to claim 1, wherein the metal complex is a β-diketone complex. The organic EL device according to claim 1, wherein the metal complex is an acetylacetonate complex. The organic EL device according to any one of claims 1 to 4, wherein the metal complex is a bisacetylacetonato calcium complex. 6. The organic EL device according to claim 1, wherein the conductive material is a conductive polymer compound. The organic EL device according to claim 1, wherein the conductive material is a polymer compound containing ethylenedioxythiophene. 8. The organic EL device according to claim 1, wherein the conductive material is PEDOT / PSS. 6. The organic EL device according to claim 1, wherein the conductive material is metal fine particles. 10. The organic EL device according to claim 1, wherein the conductive material is a mixed material of a conductive polymer compound and metal fine particles. 11. The organic EL device according to claim 1, wherein an auxiliary cathode made of metal fine particles is formed on a surface of the main cathode. The organic EL device according to claim 1, wherein the anode is made of a conductive polymer. A method for producing an organic EL device having at least a light emitting layer between an opposing anode and a main cathode,
Forming an electron injection layer made of a metal complex having an electron injection property on the surface of the light emitting layer;
Forming a main cathode on the surface of the electron injection layer by applying a first liquid containing the constituent material of the main cathode;
A method for producing an organic EL device, comprising: The method of manufacturing an organic EL device according to claim 13, wherein the electron injection layer is formed by depositing a metal complex having an electron injection property. 14. The method of manufacturing an organic EL device according to claim 13, wherein the electron injection layer is formed by applying a second liquid material containing a metal complex having an electron injection property. 16. The method of manufacturing an organic EL device according to claim 13, wherein the first liquid and / or the second liquid is applied onto the light emitting layer by a droplet discharge device. . 17. The method of manufacturing an organic EL device according to claim 13, wherein the applied first liquid and / or second liquid is baked at 150 ° C. or lower. 18. The organic EL device according to claim 13, wherein the anode is formed by applying a third liquid material containing a conductive polymer. An organic EL device manufactured using the method for manufacturing an organic EL device according to claim 13. An electronic apparatus comprising the organic EL device according to any one of claims 1 to 12.

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