JP2005051584A - High-frequency laminate device, its fabricating method and communication device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-frequency laminate device with reduced insertion loss and an improved attenuation amount. <P>SOLUTION: The high-frequency laminate device is equipped with a ceramic laminated body 20 stacked with dielectric ceramic layers 21a to 21c and a conductor layer 22 embedded inside the ceramic laminated body 20. There are provided air gaps 23 in portions that lateral sides of ends of the conductor layer 22 face. When a middle portion of the conductor layer 22 is made into t<SB>2</SB>in thickness and a portion at a 5% inward point of the total width of the conductor layer 22 from the lateral sides of the ends of the conductor layer 22 is made into t<SB>1</SB>in thickness, an inequality t<SB>1</SB>/t<SB>2</SB>≥0.8 is satisfied. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention generally relates to a high-frequency multilayer device, and more particularly to a high-frequency multilayer device improved so that a resonator or inductor having a high Q value is formed. The present invention also relates to a method for manufacturing such a high-frequency laminated device. The present invention further relates to a communication apparatus provided with such a high-frequency laminated device.

  Conventional high-frequency laminated devices for high-frequency applications such as resonators are formed by a screen printing method as shown in FIGS. 9A, 9B, and 9C (see, for example, Patent Document 1).

  Referring to FIG. 9A, a screen stencil mask 3 having an opening of a desired shape formed by the screen mesh 2 is aligned at a desired position on the ceramic green sheet 1. Next, the electrode paste 4 is supplied onto the screen stencil mask 3 and spread using a rubber squeegee 5 in the direction of the arrow. As a result, the electrode paste 4 is applied onto the ceramic green sheet 1 through the screen mesh 2, and an internal electrode is formed after drying.

  Next, referring to FIG. 9B, another ceramic green sheet 7 is laminated on the ceramic green sheet 1 having the internal electrode 6 printed on the upper surface, and pressing is performed to bring these sheets into close contact with each other. Next, a sintering process is performed.

  FIG. 9C is a cross-sectional view of a conventional high-frequency laminated device formed by such a method. As is clear from FIG. 9C, the central portion of the internal electrode 6 is flat, but the end side surface 8 has a sharp tapered shape. FIG. 9D will be described later.

  As is well known, when a high-frequency current flows through the conductor layer, the high-frequency current tends to concentrate on the surface of the conductor layer due to the skin effect. In particular, as shown in FIG. 9C, the high-frequency current concentrates on the end side surface 8 having a sharp tip, so that the electrical resistance of the conductor layer increases and the Q value deteriorates.

  Here, the Q value will be briefly described. The Q value is an index representing the performance indicating the sharpness (selectivity, suppression degree) of the peak of resonance.

FIG. 10A shows a resonance curve of the resonator (in the figure, the vertical axis represents current, the horizontal axis represents frequency ω, and ω ₀ represents resonance frequency), and the larger the Q value, the sharper the resonance peak. And get higher. Note that, as shown in FIG. 10B, in the case of a conductor having a smooth surface as viewed microscopically, the Q value is high, and when there is unevenness as shown in FIG. R increases and Q value decreases.

Returning to FIG. 9D, this figure shows an improved technique of the above-described prior art disclosed in Patent Document 1. According to this, even if it is a method using a printing technique for printing a conductor paste, if the device is devised so that a void portion 9 having a low relative dielectric constant ε _{r is formed in} a portion facing the end side surface 8 of the internal electrode 6, Since current concentration on the end side surface 8 of the electrode 6 is alleviated, the resistance can be reduced and the Q value can be improved.

  However, even in this case, since the electrodes are formed using the printing technique, the end of the internal electrode 6 is not formed due to a problem that a sufficient thickness of the internal electrode 6 cannot be obtained, or due to pressing in the lamination process. There is a problem that the resistance increases due to the problem of sharpness and the surface of the electrode becomes uneven, and the Q value of the resonator deteriorates.

  Therefore, as a method for solving such a problem, a technique of forming a resonator using a metal foil instead of forming a resonator by a printing technique is disclosed (for example, refer to Patent Document 2). .

  FIG. 11A is an exploded perspective view of a high-frequency filter formed by a technique using this metal foil, and FIG. 11B is a cross-sectional view taken along the line BB in FIG.

Referring to these drawings, the high frequency filter is composed of six dielectric substrates 11a to 11f. Among these, as the dielectric substrate 11d on which the resonator electrodes 14a and 14b formed of metal foil are provided, a composite material (a thermosetting resin made of epoxy resin and an inorganic filler made of powder such as Al ₂ O ₃ and MgO) And a resin substrate formed by mixing them with each other. This is because the resonator electrodes 14a and 14b are easily embedded in the dielectric substrate 11d. Reference numerals 12a and 12b denote shield electrodes, reference numeral 13 denotes an interstage coupling electrode, and reference numerals 15a and 15b denote input / output capacitance electrodes.

According to this method, the end surfaces of the resonator electrodes 14a and 14b are not tapered, and the surface of the metal foil has few irregularities and the surface roughness is small. A filter is obtained.
JP 2000-156621 A JP 2002-261507 A

  The conventional high-frequency laminated device is configured as described above. In particular, as disclosed in Patent Document 2, if the resonator electrodes 14a and 14b are formed of a metal foil, the Q value can be improved.

  However, referring to FIG. 11, since the dielectric substrate 11d for forming the resonator electrodes 14a and 14b is formed of a resin substrate with a large loss of the material itself, the problem that the Q value cannot be sufficiently improved. was there.

  Further, when ceramic and metal foil are fired at the same time as different means in order to produce the same structure, large cracks, deformation, etc. occur due to the difference in expansion coefficient between the metal foil and the ceramic dielectric substrates 11a to 11f. There was a problem that the degree of perfection as a device was not sufficient.

  The present invention has been made to solve the above-described problems, and an object thereof is to provide a high-frequency laminated device having a high Q value.

  Another object of the present invention is to provide an improved high-frequency laminated device so as not to cause cracking or deformation.

  Still another object of the present invention is to provide a high-frequency laminated device having a built-in filter including a resonator having a high Q value.

  Still another object of the present invention is to provide a high-frequency laminated device including a filter that greatly reduces insertion loss.

  Still another object of the present invention is to provide a method for manufacturing such a high-frequency laminated device.

  Another object of the present invention is to provide a communication apparatus provided with such a high-frequency laminated device.

The high-frequency laminated device according to the first aspect of the present invention includes a ceramic laminate in which dielectric ceramic layers are laminated, and a conductor layer embedded in the ceramic laminate. A gap is provided in the portion of the conductor layer facing the end side surface, and the thickness of the central portion of the conductor layer is t _2, and 5% of the total width of the conductor layer from the end side surface of the conductor layer. The following inequality is satisfied, where t ₁ is the thickness of the inside portion.

t ₁ / t ₂ ≧ 0.8
According to this invention, the gap is provided in the portion of the conductor layer facing the end side surface. Air exists in the gap, and the relative permittivity ε _r of air is 1, which is lower than the relative permittivity of the dielectric ceramic layer. Therefore, the current concentration on the side surface of the end portion of the conductor layer is reduced, and the Q value is reduced. Can be improved.

Further, the thickness of the central portion of the conductor layer is t _2, the thickness of 5% inside containing portion of the total width of the conductive layer from the end side of the conductor layer is taken as t _1, t ₁ / Since it is configured to satisfy t ₂ ≧ 0.8, the current concentration on the side surface of the end portion of the conductor layer is relaxed, and the Q value can be further improved.

  According to a preferred embodiment of the present invention, the conductor layer is formed of a metal foil.

By the conductive layer formed of a metal foil, the thickness of the central portion of the conductor layer is t _2, the thickness of 5% inside containing portion of the total width of the conductive layer from the end side of the conductor layer t When it is set to ₁ , the structure of satisfying t ₁ / t ₂ ≧ 0.8 can be easily realized.

  In addition, since the surface roughness can be reduced by using the metal foil, the current path is relatively shortened and the Q value is improved as compared with the current path flowing through the uneven surface.

  The metal foil preferably contains at least one of Ag and Cu.

According to a preferred embodiment of the present invention, the dielectric ceramic layer has a relative dielectric constant ε _r of 30 or more.

When the relative dielectric constant ε _r of the dielectric ceramic layer is 30 or more, the device can be miniaturized and the loss can be reduced because the loss is small in the high frequency region.

The dielectric ceramic layer preferably contains at least bismuth oxide and niobium oxide. The dielectric ceramic layer may contain at least calcium oxide, lithium oxide, niobium oxide and glass. With such a configuration, the dielectric constant ε _r of the dielectric ceramic layer can be 30 or more. Further, by configuring the dielectric ceramic layer as described above, a material having a Q value of 500 or more at 2 GHz can be obtained. Furthermore, when the dielectric ceramic layer is configured as described above, the firing temperature can be set to 1050 ° C. or lower, so that it can be fired simultaneously with Ag and Cu. As a result, Ag or Cu can be used as the internal electrode.

  According to a further preferred embodiment of the present invention, a filter in which the conductor layer operates as a stripline resonator is incorporated.

In the filter stripline resonator incorporated in this embodiment, a gap is provided in a portion of the ceramic laminate facing the side surface of the end portion of the conductor layer. Since air exists in the gap and the relative permittivity ε _r of air is 1, which is lower than the relative permittivity of the dielectric ceramic layer, current concentration on the side surface of the end portion of the conductor layer is relaxed. The Q value can be improved. As a result, it is possible to reduce the insertion loss of the filter and improve the attenuation.

  According to still another preferred embodiment of the present invention, a filter in which the conductor layer operates as an inductor is incorporated.

In the inductor of the filter incorporated in this embodiment, a gap is provided in a portion of the ceramic laminate that faces the side surface of the end portion of the conductor layer. Since air exists in the gap and the relative permittivity ε _r of air is 1, which is lower than the relative permittivity of the dielectric ceramic layer, current concentration on the side surface of the end portion of the conductor layer is relaxed. The Q value can be improved. As a result, it is possible to reduce the insertion loss of the filter and improve the attenuation.

  In the high-frequency multilayer device according to another embodiment of the present invention, at least one type of semiconductor component, SAW filter, or chip component is mounted on the ceramic laminate.

  In the method for manufacturing a high-frequency laminated device according to the second aspect of the present invention, first, another ceramic green sheet is laminated on the ceramic green sheet provided with the metal foil on the upper surface to form a ceramic green sheet laminate. To do. A constraining ceramic sheet for suppressing shrinkage in the in-plane direction, mainly composed of an inorganic material having a sintering temperature higher than that of the ceramic green sheet, is provided on each of the uppermost surface and the lowermost surface of the ceramic green sheet laminate. Laminate. The ceramic green sheet laminate is sintered at the sintering temperature of the ceramic green sheet in a state where the constraining ceramic sheets are laminated.

  According to this invention, since the ceramic sheet for restraint is sintered at the sintering temperature of the ceramic green sheet in a state where the ceramic sheet for restraint is laminated on each of the uppermost surface and the lowermost surface of the ceramic green sheet laminate, During sintering, the ceramic green sheet laminate shrinks in the laminating direction but does not shrink in the in-plane direction. During sintering, the metal foil expands in the in-plane direction and returns to its original size after cooling. By these actions, a gap is formed in the portion facing the end side surface of the metal foil.

  A communication device according to a third aspect of the present invention includes a communication circuit that performs communication using signal transmission and / or reception, and a high-frequency multilayer device configured as described above and having a filtering function during the communication. .

  According to the communication device according to the present invention, since the filter having a greatly reduced insertion loss is used, the characteristics as the communication device are improved.

As described above, according to the high-frequency laminated device according to the invention, the void part is provided on the side surface facing portion of the conductor layer, the thickness of the central portion of the conductive layer is t _2, the conductive layer Since the thickness of the portion that enters 5% of the entire width of the conductor layer from the side surface of the end portion is t ₁ , the end portion of the conductor layer is configured to satisfy t ₁ / t ₂ ≧ 0.8. Since the current concentration on the side surface is alleviated, the Q value can be improved. Therefore, there is an effect that a high-frequency laminated device in which insertion loss is significantly reduced and attenuation is improved can be obtained.

  According to the method for manufacturing a high-frequency laminated device according to the present invention, since the gap is formed in the portion facing the side surface of the end portion of the metal foil, the high-frequency laminated device with greatly reduced insertion loss and improved attenuation is obtained. The effect is obtained.

  According to the communication device according to the present invention, since a filter having a greatly reduced insertion loss and an improved attenuation is used, there is an effect that characteristics as a communication device are improved.

  Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1)
FIG. 1 is a schematic cross-sectional view of the high-frequency laminated device according to the first embodiment.

  Referring to FIG. 1, the high-frequency laminated device includes a ceramic laminate 20 in which dielectric ceramic layers 21a to 21d are laminated.

As the dielectric ceramic layers 21a to 21d, those having a relative dielectric constant of 30 or more are preferably used. When the relative dielectric constant ε _r of the dielectric ceramic layer is 30 or more, the device can be miniaturized and the loss can be reduced because the loss is small in the high frequency region. The dielectric ceramic layers 21a to 21d, those containing at least bismuth oxide and niobium oxide, or at least calcium oxide, lithium oxide, by configuring in those containing niobium oxide and glass, the relative dielectric constant epsilon _r 30 This can be done. Further, by configuring the dielectric ceramic layer as described above, a material having a Q value of 500 or more can be obtained at 2 GHz. Furthermore, since the firing temperature can be reduced to 1050 ° C. or lower by configuring the dielectric ceramic layer as described above, it can be fired simultaneously with Ag or Cu. As a result, Ag or Cu can be used as the internal electrode.

A conductor layer 22 is embedded in the ceramic laminate 20. Here, in order to simplify the explanation, only the conductor layer 22 that is important in the present invention is shown, and the other conductor layers are not shown. The conductor layer 22 is formed of a metal foil whose main component is gold, silver or copper having a thickness of 10 μm to 400 μm, for example. A gap portion 23 is provided in a portion of the ceramic laminate 20 facing the side surface of the end portion of the conductor layer 22. Air exists in the gap 23. The thickness of the central portion of the conductor layer 22 is t _2, and the portion that enters 5% from the end side surface of the conductor layer 22 (when the dimension of the entire width of the conductor layer 22 is W, (5/100) × W The following inequality is satisfied, where t ₁ is the distance and the thickness of the part inside.

t ₁ / t ₂ ≧ 0.8
According to the present embodiment, with reference to FIG. 2 (A), the gap 23 is provided in the portion of the conductor layer 22 facing the end side surface. Since air exists in the gap 23 and the relative permittivity of air is 1, which is lower than the relative permittivity of the dielectric ceramic layer, the electric lines of force 24 are not concentrated on the side surface of the end portion of the conductor layer 22. Since the current concentration on the side surface of the end portion of the conductor layer 22 is alleviated, the Q value can be improved.

Further, when the thickness of the central portion of the conductor layer 22 is t ₂ and the thickness of the portion entering 5% from the end side surface of the conductor layer 22 is t ₁ , t ₁ / t ₂ ≧ 0.8 is satisfied. Thus, the side surface of the end portion of the conductor layer 22 is not sharp. This also prevents the electric lines of force 24 from being concentrated on the end side surface of the conductor layer 22.

  FIG. 2B is a diagram showing a distribution of current flowing through the conductor layer 22. The vertical axis indicates the current value, and the horizontal axis indicates the distance in the width direction. A curved line 25 indicated by a dotted line is data in the case where the end surface of the conductor layer 22 and the ceramic layer are in close contact with each other in a state where there is no void portion 23 at all. In this case, the current flows concentrated on the side surface of the end portion of the conductor layer 22, and as a result, the resistance increases and the Q value decreases. A curve 26 indicated by a solid line is a case where the gap portion 23 is provided, and the electric force lines 24 are not concentrated on the side surface of the end portion of the conductor layer 22 but are averaged in the width direction. Therefore, the current concentration on the side surface of the end portion of the conductor layer 22 is alleviated, so that the resistance is reduced and the Q value can be improved.

  Further, since the surface roughness can be reduced by using the metal foil as the conductor layer 22, the current path becomes relatively shorter and the Q value is improved as compared with the current path flowing through the uneven surface. . Furthermore, since the space | gap part is provided in the edge part side surface of metal foil, even if the temperature change which a metal foil expand | swells arises, a crack does not arise.

  FIG. 3 is a graph plotting the Q value of the high-frequency laminated device obtained by changing the thickness of the conductor layer in association with the thickness of the conductor layer. Curve (1) is when the metal foil according to the present embodiment is used, and curve (2) is when the conductor layer is formed by a conventional printing technique. As is apparent from the figure, according to the present embodiment, a sufficient thickness of the conductor layer can be secured and the Q value can be remarkably improved.

Further, when the thickness of the conductor layer is the same, comparing the Q value when formed by printing technology and the Q value when formed by metal foil, the Q value is higher when formed by metal foil. That is, when formed by a printing technique, since the inequality t ₁ / t ₂ ≧ 0.8 is not satisfied, the Q value is very low, whereas when formed by a metal foil, the inequality Since t ₁ / t ₂ ≧ 0.8 can be sufficiently satisfied, the Q value can be increased.

  Returning to FIG. 1, the electronic component 27 is mounted on the ceramic laminate 20 to complete the high-frequency laminate device.

  In the present embodiment, the case where the conductor layer is formed of a metal foil is exemplified. However, the present invention is not limited to this, and any one that satisfies the above inequality is applicable.

(Embodiment 2)
The present embodiment relates to a method for manufacturing a high-frequency laminated device.

  Referring to FIG. 4A, metal foil 22 is arranged on ceramic green sheet 21b. The other ceramic green sheets 21a and 21c are laminated on the upper and lower sides of the ceramic green sheet 21 provided with the metal foil 22 on the upper surface to form a ceramic green sheet laminate 29. As the ceramic green sheets 21a, 21b, and 21c, those containing at least bismuth oxide and niobium oxide are preferably used. Further, as the ceramic green sheets 21a, 21b, and 21c, those containing at least calcium oxide, lithium oxide, niobium oxide, and glass can be used.

  Constraints for suppressing shrinkage in the in-plane direction, each containing an inorganic material whose sintering temperature is higher than that of the ceramic green sheets 21a, 21b, and 21c on the uppermost surface and the lowermost surface of the ceramic green sheet laminate 29, respectively. The ceramic sheet 28 is laminated. As the inorganic material, a material containing at least one of aluminum oxide, magnesium oxide, and zirconium oxide was used. The inorganic material is not limited to this.

  In a state where the constraining ceramic sheets 28 are laminated, the ceramic green sheet laminate 29 is sintered at a sintering temperature of the induction ceramic green sheet, for example, a temperature of 1000 ° C. or less, preferably 950 ° C.

  With reference to FIG. 4B, the restraining ceramic sheet 28 does not shrink at a sintering temperature of 1000 ° C. or lower. For this reason, the ceramic green sheet laminate 29 contracts in the stacking direction but does not contract in the in-plane direction. During the sintering, the metal foil 22 expands in the in-plane direction and returns to its original size after cooling. By these actions, a gap 23 is formed in the portion of the metal foil 22 facing the end side surface.

  Referring to FIGS. 4B and 4C, the restraining ceramic sheet 28 is removed, and the electronic component 27 is mounted on the ceramic green sheet laminate 29 to complete the high-frequency laminate device.

(Embodiment 3)
FIG. 5A is an exploded perspective view of the main part of the high-frequency filter in which the conductor layer operates as a stripline resonator, and FIG. 5B is an equivalent circuit diagram thereof. With reference to these drawings, the high-frequency filter includes dielectric ceramic layers 30a to 30d. A shield electrode 31a is provided on the dielectric ceramic layer 30a, and a shield electrode 31b is provided on the back surface of the dielectric ceramic layer 30d. Input / output capacitance electrodes 33a and 33b are provided on the dielectric ceramic layer 30b. A coupling capacitor electrode 34 is provided on the dielectric ceramic layer 30d. The input / output capacitance electrodes 33a and 33b and the coupling capacitance electrode 34 are formed by printing a conductive paste.

Strip line resonators 32a and 32b formed of metal foil are provided on the dielectric ceramic layer 30c. A gap 23 is provided in a portion of the stripline resonator 32a, 32b facing the end side surface. When the thickness of the central portion of the metal foil is t ₂ and the thickness of the portion entering 5% of the entire width of the metal foil from the side surface of the metal foil is t ₁ , t ₁ / t ₂ ≧ 0.8 It is configured to satisfy.

  Air exists in the gap 23, and the relative permittivity of air is 1, which is lower than the relative permittivity of the dielectric ceramic layer, and the current concentration on the side surfaces of the end portions of the stripline resonators 32a and 32b is alleviated. Thus, the resistance can be reduced and the Q value can be improved. In addition, since the surface roughness can be reduced by using the metal foil, the current path is relatively short and the Q value is improved as compared with the current path flowing through the uneven surface. As a result, a resonator having a high Q value can be formed, and the insertion loss of the filter can be reduced and the attenuation can be improved.

  The open end side of the stripline resonators 32a and 32b is widened, and the short-circuited end side is narrowed. Thus, by providing a difference in width between the open end side and the short-circuit end side of the stripline resonators 32a and 32b, the degree of coupling (electromagnetic field coupling) between the stripline resonators 32a and 32b can be increased. Each can be changed arbitrarily, and the degree of freedom in design is improved.

  In the present embodiment, the electrodes other than the stripline resonators 32a and 32b can also be made of metal foil.

(Embodiment 4)
6A is an exploded perspective view of the main part of the high-frequency filter in which the conductor layer operates as an inductor, and FIG. 6B is a cross-sectional view taken along line BB in FIG. 6A. FIG. 6C is an equivalent circuit diagram. FIG. 6D is a diagram showing the frequency characteristics of such a high frequency filter.

With reference to these drawings, the high-frequency filter according to the present embodiment includes dielectric ceramic layers 40a to 40f. On the dielectric ceramic layer 40c, a lumped constant inductor formed of the metal foil 42 is provided. A lead electrode 42t is provided on the dielectric ceramic layer 40b. The lead electrode 42t and the metal foil 42 are connected by a through hole 42p. A gap 23 is provided in a portion of the metal foil 42 facing the end side surface. When the thickness of the central portion of the metal foil 42 is t ₂ and the thickness of the portion that is 5% inside the entire width of the metal foil 42 from the side surface of the end portion of the metal foil 42 is t ₁ , t ₁ / t ₂ ≧ It is configured to satisfy 0.8.

  On the dielectric ceramic layer 40d, one capacitor electrode 43a forming the capacitor C1, one capacitor electrode 44a forming the capacitor C2, and lead electrodes 43t and 44t are provided. On the dielectric ceramic layer 40e, the other capacitor electrode 43b forming the capacitor C1 and the other capacitor electrode 44b forming the capacitor C2 are provided. The capacitive electrodes 43a, 43b, 44a, 44b are formed by printing a conductive paste. A shield electrode 46s is provided on the dielectric ceramic layer 40f. The capacitive electrodes 43b and 44b are connected to the shield electrode 46s through the through hole 46 and grounded. The shield electrode 40s is also provided on the dielectric ceramic layer 40a. By configuring as described above, a low-pass filter having frequency characteristics as shown in FIG. 6D was obtained.

  According to the high frequency filter of the present embodiment, the gap portion 23 is provided in the portion of the metal foil 42 that forms the inductor that faces the end side surface. Since air exists in the gap 23 and the relative permittivity of air is 1, which is lower than the relative permittivity of the dielectric ceramic layer, current concentration on the side surface of the end of the metal foil 42 is alleviated. The resistance can be reduced, and the Q value can be improved. Further, since the surface roughness can be reduced by using the metal foil as the inductor, the current path becomes relatively shorter and the Q value is improved as compared with the current path flowing through the uneven surface. As a result, an inductor having a high Q value can be formed, and the insertion loss of the filter can be reduced and the attenuation can be improved.

  In the present embodiment, the electrodes other than the inductor can also be made of a metal foil.

(Embodiment 5)
FIG. 7 is a perspective view of the laminated module according to the fifth embodiment.

  The laminated module 50 includes a high-frequency laminated device having the configuration described in the above embodiment. The laminated module 50 includes a ceramic laminated body 51. On the ceramic laminated body 51, at least one or more types of semiconductor components 53, SAW filters 53, PIN diodes 54, chip capacitors 55, and chip resistors 56 are mounted.

  According to the laminated module according to the present embodiment, since the filter having the insertion loss greatly reduced and the attenuation is improved, the characteristics as the laminated module are improved.

(Embodiment 6)
FIG. 8 is a block diagram of a communication device according to the sixth embodiment. The communication device includes an antenna 64 and a duplexer 65 connected to the antenna 64. The duplexer 65 is composed of three elements of a transmission filter, a reception filter, and a demultiplexing circuit connected between the two filters, has a filtering function in communication, and includes the filter configured as described above. A transmission circuit unit 62 and a reception circuit unit 63 are connected to both ends of the duplexer 65. The transmission circuit unit 62 and the reception circuit unit 63 are connected to the baseband unit 61, respectively. With this configuration, communication can be performed using signal transmission and / or reception.

  According to the communication device according to the present embodiment, since the filter having a greatly reduced insertion loss and an improved attenuation is used, the characteristics as the communication device are improved.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  The high-frequency laminated device of the present invention is useful as a high-frequency filter or the like.

Schematic cross-sectional view of the high-frequency laminated device according to the first embodiment (A) A diagram showing a distribution of electric lines of force generated in a conductor layer (B) A diagram showing a distribution of current flowing in the conductor layer A plot of the Q values of high-frequency multilayer devices obtained by varying the thickness of the conductor layer The figure which shows the process of the manufacturing method of the high frequency laminated device concerning Embodiment 2. FIG. (A) Exploded perspective view of the high-frequency filter according to the third embodiment (B) Equivalent circuit diagram of the high-frequency filter according to the third embodiment (A) Exploded perspective view of a high-frequency filter according to the fourth embodiment (B) Cross-sectional view taken along line BB in FIG. 6 (A) (C) Equivalent circuit diagram of the high-frequency filter according to the fourth embodiment (D) The figure which shows the frequency characteristic of the high frequency filter concerning Embodiment 4. The perspective view of the lamination | stacking module concerning Embodiment 5. FIG. Block diagram of a communication device according to the sixth embodiment (A) Perspective view showing a first step of a conventional high-frequency laminated device manufacturing method (B) Cross-sectional view showing a second step of a conventional high-frequency laminated device manufacturing method (C) Manufacturing of a conventional high-frequency laminated device Sectional drawing which shows the 3rd process of a method (D) Sectional drawing of another conventional high frequency laminated device (A) A figure showing a resonance curve (B) A figure showing a state of current flowing on a smooth conductor surface by the skin effect (C) A figure showing a state of current flowing on a conductor surface having irregularities by the skin effect (A) Exploded perspective view of a high-frequency filter according to still another conventional example (B) Cross-sectional view taken along line BB in FIG. 11 (A)

Explanation of symbols

DESCRIPTION OF SYMBOLS 20 Ceramic laminated body 21a-21d Dielectric ceramic layer or ceramic green sheet 22 Conductor layer or metal foil 23 Gap part 27 Electronic component

Claims (11)

A ceramic laminate in which dielectric ceramic layers are laminated;
A conductor layer embedded in the ceramic laminate,
A gap is provided in a portion of the conductor layer facing the end side surface, and the thickness of the central portion of the conductor layer is t _2, and 5% of the total width of the conductor layer from the end side surface of the conductor layer. A high-frequency laminated device that satisfies the following inequality when the thickness of the inside portion is t ₁ .
t ₁ / t ₂ ≧ 0.8 The high-frequency laminated device according to claim 1, wherein the conductor layer is formed of a metal foil. The high-frequency laminated device according to claim 2, wherein the metal foil includes at least one of Ag and Cu. 4. The high-frequency multilayer device according to claim 1, wherein the dielectric ceramic layer has a relative dielectric constant of 30 or more. The high-frequency laminated device according to any one of claims 1 to 4, wherein the dielectric ceramic layer contains at least bismuth oxide and niobium oxide. 5. The high-frequency laminated device according to claim 1, wherein the dielectric ceramic layer contains at least calcium oxide, lithium oxide, niobium oxide, and glass. The high-frequency laminated device according to any one of claims 1 to 6, wherein a filter in which the conductor layer operates as a stripline resonator is incorporated. The high-frequency laminated device according to any one of claims 1 to 6, wherein a filter in which the conductor layer operates as an inductor is incorporated. The high-frequency laminated device according to any one of claims 1 to 8, wherein at least one kind of semiconductor component, SAW filter, or chip component is mounted on the upper surface of the ceramic laminate. Laminating another ceramic green sheet on the ceramic green sheet provided with the metal foil on the upper surface, forming a ceramic green sheet laminate,
A constraining ceramic sheet for suppressing shrinkage in the in-plane direction, mainly composed of an inorganic material having a sintering temperature higher than that of the ceramic green sheet, on each of the uppermost surface and the lowermost surface of the ceramic green sheet laminate. Laminating steps;
And a step of sintering the ceramic green sheet laminate at a sintering temperature of the ceramic green sheet in a state where the constraining ceramic sheets are laminated. A communication circuit for performing communication using signal transmission and / or reception;
The communication apparatus provided with the high frequency lamination | stacking device of any one of Claim 1 to 9 which has a filtering function in the said communication.

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