JP2005044636A - Superconductive wire rod - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a superconductive wire rod capable of achieving required stabilization at low cost while minimizing the increase in size of the wire rod. <P>SOLUTION: The superconductive wire rod comprises a conductive first substrate 10, an intermediate layer 20 formed on the first substrate 10, a superconductive layer 30 formed on the intermediate layer 20, and a stabilization layer 40 electrically continuous to both of the first substrate 10 and the superconductive layer 30. Since the first substrate 10 and the superconductive layer 30 are electrically continuous through the stabilization layer 40, when a large current is passed through the wire rod and even if a portion of the superconductive layer 30 has changed to normal conduction, it is possible to bypass the current to the first substrate 10 through the stabilization layer 40. It is thereby possible to protect the superconductive layer 30 and to pass the current in a stabilized state. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a superconducting wire. In particular, the present invention relates to a superconducting wire that can be stably energized even when a part of the superconducting layer is transferred to normal conduction.

  As a superconducting wire, an insulating intermediate layer 20 such as yttrium-stabilized zirconia (YSZ) is formed on a tape-like substrate 10 as shown in FIG. 8, and an oxide superconductor is formed on the intermediate layer 20. There is known a superconducting wire in which a superconducting layer 30 is formed and a stabilizing layer 40 such as silver is further formed on the superconducting layer 30 (see, for example, Patent Document 1 and Patent Document 2).

  Normally, such a superconducting layer 30 has a distribution of superconducting characteristics, and due to variations in these characteristics, when a current is passed through the superconducting layer 30, a part of the superconducting layer 30 is transferred to normal conduction. There is. The stabilization layer 40 is provided in order to protect the superconducting layer 30 by passing a current flowing through a portion where the transition is made from superconducting to normal conducting to the stabilizing layer 40 and to carry out stable power transport as a superconducting wire. The conventional stabilization layer 40 is formed only on the upper surface of the superconducting layer 30.

Japanese Unexamined Patent Publication No. 7-37444 Japanese Unexamined Patent Publication No. 7-73759

  However, the conventional superconducting wire has a problem that it is difficult to exhibit sufficient performance as a stabilizing layer.

  In general, the stabilization layer has a small thickness of about several μm and does not have a sufficient current capacity. Therefore, if a large current is bypassed to the stabilization layer, the stabilization layer may burn out. Alternatively, since the stabilization layer is thin, the electrical resistance is not sufficiently low, and a large current flows through the superconducting layer that has been transferred to normal conduction, which may cause the superconducting layer to burn out.

  On the other hand, increasing the thickness of the stabilization layer eliminates the problem of burning of the stabilization layer or superconducting layer when a large current flows, but increases the thickness of the wire. For example, if the stabilization layer in the conventional superconducting wire is 100 μm, the thickness of the superconducting wire is almost doubled. In addition, in order to increase the thickness of the stabilization layer, many materials for the stabilization layer are required. In addition, the stabilization layer is usually formed by a vapor phase method or plating, and it takes a long time to form a thick stabilization layer. As a result, the cost of the superconducting wire is increased.

  Further, in the above-described superconducting wire, since an insulating layer such as YSZ is interposed at the interface between the superconducting layer and the substrate, electrical conduction between the superconducting layer and the substrate cannot be achieved. Therefore, when a part of the superconducting layer is transferred to normal conduction during use of the wire, it is impossible to bypass the current to the substrate to protect the superconductor, that is, the substrate cannot function as a stabilization layer.

  Therefore, the main object of the present invention is to provide a superconducting wire that can suppress the increase in wire size as much as possible and can realize the necessary stabilization at low cost.

  The present invention achieves the above object by devising the formation structure of the stabilization layer and providing the substrate also with a function as the stabilization layer.

  The superconducting wire of the present invention is electrically connected to the first conductive substrate, the intermediate layer formed on the first substrate, the superconducting layer formed on the intermediate layer, and both the first substrate and the superconducting layer. And a stabilizing layer.

  With this configuration, since the first substrate and the superconducting layer are conducted through the stabilization layer, the first substrate itself can also function as the stabilization layer. That is, when a large current is passed through the wire, a part of the superconducting layer may be transferred to normal conduction. Even in such a case, the current can be bypassed to the substrate via the stabilization layer, and the current can flow in a stable state while protecting the superconducting layer.

  In addition, since the substrate itself can have a function as a stabilization layer, that is, a function as a current bypass path, it is not necessary to increase the thickness of the stabilization layer, and the thickness of the superconducting wire is increased. Can be avoided.

  Specific examples of the structure that establishes conduction between the substrate and the superconducting layer through the stabilization layer include the following.

  (1) The stabilizing layer is a metal film that covers the upper surface of the superconducting layer and the side surfaces of the first substrate, the intermediate layer, and the superconducting layer. According to this configuration, the substrate and the superconducting layer can be electrically connected by providing the stabilizing layer not only on the upper surface of the superconducting layer but also on the side surfaces of the first substrate, the intermediate layer, and the superconducting layer.

  (2) The intermediate layer is laminated on a part of the first substrate surface. The stabilization layer is a metal film that covers the upper surface and side surfaces of the superconducting layer, the side surfaces of the intermediate layer, and the exposed surface of the first substrate upper surface where the intermediate layer and superconducting layer are not formed. According to this configuration, by providing the intermediate layer and the superconducting layer having an area smaller than that of the first substrate, sufficient conduction between the first substrate and the superconducting layer can be achieved while reducing the formation range of the stabilization layer. Can do. In particular, the width of the superconducting wire can be made equal to the width of the first substrate by forming the stabilizing layer on each side surface of the intermediate layer and the superconducting layer flush with the side surface of the first substrate.

  (3) A conductive second substrate with a superconducting layer sandwiched between the first substrate and the first substrate is provided. The stabilization layer is a metal film that covers the upper surface of the second substrate and the side surfaces of the first substrate, the intermediate layer, the superconducting layer, and the second substrate. According to this configuration, by having not only the first substrate but also the second substrate, both substrates can have the function of a stabilizing layer, and a superconducting wire that can be more stably energized is configured. Can do.

  (4) The stabilization layer is a metal film covering the upper and lower surfaces and side surfaces of the superconducting wire. According to this configuration, the entire circumference of the superconducting wire can be covered with the stabilization layer, and conduction between the substrate and the superconducting layer can be achieved.

  Hereafter, each component of this invention wire is demonstrated in detail.

<First and second substrates>
The first and second substrates are preferably made of a low resistance material in order to function as a stabilization layer. However, since the first substrate has restrictions for forming a superconducting layer on the substrate via an intermediate layer, restrictions for securing strength as a wire, etc., a material that can cope with these restrictions is suitable. . For example, various metal materials represented by nickel alloys such as stainless steel, nickel, or Hastelloy (registered trademark: “For example, Hastelloy C-276”), or copper (alloy), aluminum (alloy), and nickel (alloy) The laminated body bonded together is preferable. These materials do not have exceptionally low resistivity as a metal material, but generally the thickness of the substrate, particularly the thickness of the first substrate, is somewhat large, so that the resistance is lower than that of a conventional thin stabilization layer. As long as the first substrate can cope with the above-described restrictions, it is possible to select a material that emphasizes low resistance for the second substrate. For example, gold, silver, copper, aluminum, or an alloy thereof can be used. Of course, the material of the second substrate may be the same as that of the first substrate.

  The shape of the first and second substrates is usually preferably a tape shape. Generally, the thickness of the substrate is about 80-100 μm. Since the first substrate mainly contributes to securing the wire strength, the thickness of the second substrate can be appropriately selected as a thickness necessary for functioning as a stabilizing layer.

<Intermediate layer>
The intermediate layer is formed in order to avoid the occurrence of mutual diffusion between the substrate and the superconducting layer due to heating at the time of forming the superconducting layer and the performance as a superconducting wire being deteriorated. The intermediate layer may also have a role of relaxing crystal lattice mismatch between the substrate and the superconducting layer. Further, an intermediate layer having a uniform crystal orientation may be formed on a polycrystalline metal substrate having a uniform crystal orientation by a method such as IBAD (Ion Beam Assisted Deposition) or ISD (Inclined Substrate Deposition). Therefore, the material of the intermediate layer preferably has a crystal structure close to the crystal of the superconducting layer and has a thermal expansion coefficient close to that of the oxide superconducting layer. For example, ceramic materials such as YSZ, SrTiO ₃ , MgO, and CeO ₂ are preferable.

  The thickness of the intermediate layer may generally be about several μm. As a method for forming the intermediate layer, any film forming method such as sputtering, vacuum vapor deposition, laser vapor deposition, or chemical vapor deposition (CVD) may be used. Among these, the pulsed laser deposition method (PLD method) has a higher film formation rate and is suitable for mass production than other film formation methods such as sputtering and molecular beam epitaxy. When a tape material is used as the first substrate, a tape feeding device and a winding device are provided in the film forming apparatus to be used, and the base material fed from the feeding device is continuously moved at a predetermined speed in the device. What is necessary is just to perform a continuous film-forming process to the base material which is winding and moving with a winding device. The method of forming a film on these tape materials is the same in the formation of the superconducting layer described below.

  In particular, the ISD method (Inclined Substrate Deposition) using the PLD method is suitable. According to the ISD method, deposition is performed with the substrate inclined at a predetermined angle with respect to the target. Therefore, it is possible to form an intermediate layer having a crystal structure oriented in two directions, that is, a direction perpendicular to the substrate surface and a plasma flight direction, that is, a polycrystalline structure close to a single crystal.

  In addition, it is also preferable to form the intermediate layer by IBAD method (Ion Beam Assisted Deposition) or RABiTS method (Rolling-assisted Biaxially Textured Substrates). These ISD, IBAD, and RABiTS methods can of course be used for forming a superconducting layer, which will be described later.

<Superconducting layer>
As the superconductor constituting the superconducting layer, an oxide superconductor is suitable. For example, rare earth element-containing perovskite oxide superconductors, Bi-Sr-Ca-Cu-O-based oxide superconductors, Tl-Ba-Ca-Cu-O-based oxide superconductors, and the like are applied.

Examples of the oxide superconductor containing a rare earth element and having a perovskite structure include a REM ₂ Cu ₃ O _7-x oxide. Here, RE is at least one element selected from rare earth elements such as Y, La, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, and Yb, and M is selected from Ba, Sr, and Ca. Further, at least one element, X is a number of 1 or less. In REM ₂ Cu ₃ O _7-x , a part of Cu can be substituted with Ti, V, Cr, Mn, Fe, Co, Ni, Zn. More specifically, Y ₁ Ba ₂ Cu ₃ O _7-x can be mentioned.

Bi-Sr-Ca-Cu-O-based oxide superconductors include oxides represented by Bi ₂ Sr ₂ Ca ₂ Cu ₃ O _x and Bi ₂ (Sr, Ca) ₃ Cu ₂ O _x. included. Among these, a part of Bi can be replaced with Pb. Typical examples include (Bi, Pb) ₂ Ca ₂ Sr ₂ Cu ₃ O _x , (Bi, Pb) ₂ Ca ₂ Sr ₃ Cu ₄ O _{x and the} like. Tl-Ba-Ca-Cu-O oxide superconductors include Tl ₂ Ba ₂ Ca ₂ Cu ₃ O _x , Tl ₂ (Ba, Ca) ₃ Cu ₂ O _x , Tl ₁ Ba ₂ Ca ₂ Cu ₃ O _x And oxides represented by Tl ₁ Ba ₂ Ca ₃ Cu ₄ O _{x and the} like.

  These superconducting layers are formed by various thin film formation methods such as sputtering, physical vapor deposition, reactive vapor deposition, laser vapor deposition, chemical vapor deposition (CVD), and metal organic chemical vapor deposition (MOCVD). Can be formed. Among them, it is preferable to use a PLD method that can form a uniform film at a high film forming speed continuously for a long time. To perform laser deposition by the PLD method, a superconductor material sintered body is used as a target, and this target is irradiated with an excimer laser in a vacuum to form a plasma, and a superconducting layer is formed on a substrate with an intermediate layer facing the target. Deposit.

<Stabilization layer>
As the material of the stabilization layer, a material that does not react with the superconducting layer or has little reaction is used. In particular, a metal material having a thermal expansion coefficient close to or larger than that of the oxide superconductor is preferable. For example, gold, silver, platinum, or an alloy thereof can be used. In particular, silver is preferable in terms of economy.

  The thickness of the stabilization layer may be about 1 μm to several tens of μm. Even with such a thickness, the substrate can function as a stabilizing layer, so that the superconducting wire can be sufficiently stabilized.

  Any of the various film forming methods described above may be used as a method of forming the stabilization layer. The gold or silver stabilization layer can be formed at a very high deposition rate by laser vapor deposition. In particular, high productivity is achieved by enabling the apparatus for forming the oxide superconducting layer and the apparatus for forming the stabilizing layer to be operated continuously. In order to form the stabilization layer on the side surfaces of the substrate, the intermediate layer, and the superconducting layer, in the case of the vapor phase method, the film formation target is inclined and the side surface is directed in the flight direction of the vapor phase material. Further, in addition to the film forming method described above, plating can also be used for forming the stabilizing layer. In particular, the plating method can easily form a film on the entire circumference of the film formation target. If vapor deposition and plating are used in combination, a relatively thick stabilization layer can be easily formed.

  After forming the stabilization layer, it is preferable to perform heat treatment at a temperature of 500 ° C to 750 ° C. By performing such heat treatment, the contact resistance between the superconducting layer and the stabilizing layer can be greatly reduced. For this reason, even if a partial transition from superconductivity to normal conductivity occurs and resistance is generated, current flows bypassing the stabilization layer in that portion, and heat generation is suppressed. In addition, this heat treatment can reduce defects on the surface of the stabilization layer and improve adhesion to the superconducting layer. The heat treatment time is good for about 1 hour. Further, in this heat treatment, oxygen is released from the superconducting layer and the characteristics are deteriorated. Therefore, the heat treatment is preferably performed in oxygen.

Embodiments of the present invention will be described below.
(Example 1)
FIG. 1 is a schematic cross-sectional view showing a superconducting wire of the present invention. In this wire, the first substrate 10, the intermediate layer 20, and the superconducting layer 30 are laminated in this order from the bottom, and the stabilization layer 40 is covered on the upper surface and side surfaces of the laminated body. Here, Hastelloy C-276 is used for the first substrate 10, YSZ is used for the intermediate layer 20, YBaCuO-based superconducting film is used for the superconducting layer 30, and silver is used for the stabilizing layer 40. The first substrate 10 and the superconducting layer 30 are brought into conduction through the chemical layer 40. Therefore, even if the superconducting layer 30 partially changes from superconducting to normal conducting, current can be bypassed to the first substrate via the stabilizing layer 40. That is, the first substrate 10 can also function as a stabilization layer, and a superconducting wire that can flow current more stably can be configured.

A method for manufacturing such a wire will be described with reference to FIG. First, a first substrate 10 (width 10 mm, length 550 mm, thickness 0.1 mm) of Hastelloy C-276 is prepared. YSZ is formed on the upper surface of the first substrate 10 as an intermediate layer 20 for preventing mutual diffusion with the first substrate 10 by the ISD method. Subsequently, a Y ₁ Ba ₂ Cu ₃ O _7-x film is formed on the first substrate on which the intermediate layer 20 is formed by the ISD method. In the ISD method used to form the intermediate layer 20 and the superconducting layer 30, a YSZ or Y ₁ Ba ₂ Cu ₃ O _7-x sintered body is used as a target, and the target is irradiated with an excimer laser in vacuum to generate plasma. Then, the intermediate layer 20 is formed on the first substrate 10 or the superconducting layer 30 is formed on the intermediate layer 20. The film forming apparatus is provided with a film forming tape feeding device and a winding device in a vacuum chamber, and the film forming tape fed from the feeding device is wound by the winding device while moving at a predetermined speed in the device. The continuous film forming process can be performed on the moving film forming target tape. The formed intermediate layer 20 has a thickness of 1 μm, and the superconducting layer 30 has a thickness of 1 μm.

  Next, a silver stabilization layer 40 was formed on the laminate 50 of the first substrate 10, the intermediate layer 20, and the superconducting layer 30 by a laser ablation method. At that time, as shown in FIG. 5A, film formation is performed by tilting the multilayer body 50 so that the superconducting layer 30 of the multilayer body 50 faces downward and the left side of the multilayer body 50 also faces the target. Thereafter, the stacked body 50 is tilted so that the right side surface of the stacked body 50 faces the target (not shown), and the same film formation is performed. Through this process, a superconducting wire in which the stabilization layer 40 is formed not only on the upper surface of the laminate 50 but also on the left and right side surfaces is obtained.

(Example 2)
Next, the wire of the present invention having a configuration different from that of Example 1 will be described with reference to FIG. Also in this superconducting wire, the first substrate 10, the intermediate layer 20, and the superconducting layer 30 are laminated in order from the bottom, but the intermediate layer 20 and the superconducting layer 30 are formed only on a part of the upper surface of the first substrate. That is, there is a step at the boundary between the first substrate 10 and the intermediate layer 20, and the upper surface of the first substrate 10 is exposed at a location where the intermediate layer 20 and the superconducting layer 30 are not formed. Then, the stabilization layer 40 is formed so as to cover the upper surface and the side surface of the superconducting layer 30, the side surface of the intermediate layer 20, and the exposed surface 11 where the intermediate layer 20 and the superconducting layer 30 are not formed on the first substrate upper surface. Here, the stabilization layer 40 is formed so that the side surface of the stabilization layer 40 and the side surface of the first substrate 10 are flush with each other, and the width of the superconducting wire is made equal to the width of the substrate.

  According to this configuration, the formation region of the stabilization layer 40 can be reduced, and conduction between the first substrate 10 and the superconducting layer 30 can be ensured. In particular, if the width of the exposed surface 11 is increased, the contact area between the stabilization layer 40 and the first substrate 10 is larger than that in the first embodiment, so that the conduction between the first substrate 10 and the superconducting layer 30 can be ensured. Can be taken. Therefore, the first substrate 10 can also function as a stabilization layer, and a superconducting wire that can flow current more stably can be configured.

A manufacturing method of such a wire will be described with reference to FIG. First, a first substrate 10 (width 10 mm, length 550 mm, thickness 0.1 mm) of Hastelloy C-276 is prepared. YSZ is formed on the upper surface of the first substrate 10 as an intermediate layer 20 for preventing mutual diffusion with the first substrate 10 by the ISD method. At that time, a mask 60 is interposed between the first substrate 10 and the target so that the intermediate layer 20 is formed only at a predetermined position on the substrate 10. Subsequently, a Y ₁ Ba ₂ Cu ₃ O _7-x film is formed by the ISD method on the first substrate 10 on which the intermediate layer 20 is formed. Even in the formation of the superconducting layer 30, a mask 60 is interposed between the first substrate 10 with the intermediate layer and the target so that the superconducting layer 30 is formed only on the upper surface of the intermediate layer 20. In the ISD method used to form the intermediate layer 20 and the superconducting layer 30, a YSZ or Y ₁ Ba ₂ Cu ₃ O _7-x sintered body is used as a target, and the target is irradiated with an excimer laser in vacuum to generate plasma. Then, the intermediate layer 20 is formed on the first substrate 10 or the superconducting layer 30 is formed on the intermediate layer 20. The film forming apparatus is provided with a film forming tape feeding device and a winding device in a vacuum chamber, and the film forming tape fed from the feeding device is wound by the winding device while moving at a predetermined speed in the device. The continuous film forming process can be performed on the moving film forming target tape. The formed intermediate layer 20 has a thickness of 1 μm, and the superconducting layer 30 has a thickness of 1 μm.

  Next, a silver stabilization layer 40 was formed on the laminate 50 of the first substrate 10, the intermediate layer 20, and the superconducting layer 30 by a laser ablation method. Here, the target and the film formation target, that is, the first substrate 10 on which the intermediate layer 20 and the superconducting layer 40 are partially formed are horizontally arranged to face each other, and the upper surface and side surfaces of the superconducting layer 30 and the side surfaces of the intermediate layer 20 In addition, the stabilization layer 40 is formed only on the exposed surface 11 where the intermediate layer 20 and the superconducting layer 30 are not formed on the upper surface of the first substrate. Through this process, a superconducting wire in which the superconducting layer 30 and the first substrate 10 are electrically connected via the stabilization layer 40 on the upper surface of the first substrate is obtained.

(Example 3)
Furthermore, the wire of the present invention having a configuration different from that of the first embodiment will be described with reference to FIG. In this superconducting wire, the first substrate 10, the intermediate layer 20, and the superconducting layer 30 are laminated in this order from the bottom, but in the point that the stabilizing layer 40 is formed on the entire circumference of these laminates, Is different. Other configurations and the first substrate 10 can function as a stabilization layer, and the current can flow more stably as in the first embodiment.

  A method for manufacturing such a wire will be described with reference to FIG. The first substrate 10 is prepared, the intermediate layer 20 and the superconducting layer 30 are formed thereon, and the same process as in Example 1 is performed until the stabilization layer 40 is formed on the upper and side surfaces of the obtained laminate 50. . Thereafter, electroless plating is performed on the obtained laminate 50 to form a stabilization layer that covers the entire circumference of the laminate 50.

  According to the configuration of the third embodiment, the contact area between the stabilization layer 40 and the first substrate 10 can be increased as compared with the first embodiment as well as the first embodiment. Conductivity with 30 can be taken. Furthermore, compared with Example 2, the cross-sectional area of the superconducting layer 30 occupying the whole wire is large, and a larger current capacity can be secured.

(Example 4)
Further, the wire of the present invention having a configuration different from that of the first embodiment will be described with reference to FIG. In this superconducting wire, the first substrate 10, the intermediate layer 20, and the superconducting layer 30 are laminated in order from the bottom, and the second substrate 70 is disposed on the upper surface of the superconducting layer 30 with the stabilization layer 40A interposed therebetween. Stabilization layers 40B are formed on the top surface and the left and right side surfaces of the laminate from the first substrate 10 to the second substrate 70. Here, a copper tape having a thickness of 0.1 μm is used as the second substrate 70.

  According to this configuration, since the two substrates 10 and 70 are arranged on the upper and lower surfaces of the superconducting layer 30 and are conducted through the stabilization layer, both the substrates 10 and 70 function as the stabilization layer. And a larger current can flow through the stabilization layer and both substrates 10,70. In particular, in the first substrate 10, there is a possibility that the resistance increases due to the influence of surface oxidation during the production of the intermediate layer or the superconducting layer, but the second substrate 70 is not affected by such an adverse effect, so it is more reliable. It can be used as a superconducting wire while maintaining low resistance.

  A method for manufacturing such a wire will be described with reference to FIG. The first substrate 10 is prepared, the intermediate layer 20 and the superconducting layer 30 are formed thereon, and the stabilization layer 40A is formed on the upper surface of the obtained laminate 50. Next, a second substrate 70 having a thickness of 0.1 mm is bonded onto the stabilization layer 40A. This bonding was performed by partially arranging a silver paste on the bonding surface. If the stacked body 51 from the first substrate 10 to the second substrate 70 can be formed, the subsequent formation of the stabilization layer 40B is the same as in the first embodiment. That is, the stabilization layer 40B is formed by tilting the stacked body 51 to the left and right. As a result, it is possible to obtain a superconducting wire in which the stabilization layer 40B is formed on the upper surface and the left and right side surfaces of the laminate 51 from the first substrate 10 to the second substrate 70.

  Further, as shown in FIG. 7B, the obtained superconducting wire is subjected to electroless plating to form a stabilization layer 40B covering the entire circumference of the laminate 51 from the first substrate 10 to the second substrate 70. May be.

  As described above, the superconducting wire of the present invention can achieve necessary stabilization at a low cost while suppressing the increase in wire size as much as possible by using the substrate as a stabilization layer. Therefore, it is expected to be effectively used in fields where high critical current density is required, such as cables and magnets.

1 is a schematic cross-sectional view of a superconducting wire of the present invention according to Example 1. FIG. It is a schematic cross section of the superconducting wire of the present invention according to Example 2. It is a schematic cross section of the superconducting wire of the present invention according to Example 3. It is a schematic cross section of the superconducting wire of the present invention according to Example 4. (A) is explanatory drawing which shows the manufacturing method of the wire of Example 1, (B) is explanatory drawing which shows the manufacturing method of the wire of Example 3. FIG. It is explanatory drawing which shows the manufacturing method of the wire of Example 2. FIG. (A) is explanatory drawing which shows the manufacturing method of the wire of Example 4, (B) is further explanatory drawing which shows the manufacturing method which forms a stabilization layer in the perimeter of a wire. It is a schematic cross section of the conventional superconducting wire.

Explanation of symbols

10 First board
11 Exposed surface
20 middle class
30 Superconducting layer
40 Stabilization layer
40A stabilization layer
40B stabilization layer
50 laminates
51 Laminate
60 mask
70 Second board

Claims (5)

A conductive first substrate;
An intermediate layer formed on the first substrate;
A superconducting layer formed on the intermediate layer;
A superconducting wire comprising a stabilizing layer that is conducted to both the first substrate and the superconducting layer.   2. The superconducting wire according to claim 1, wherein the stabilization layer is a metal film that covers an upper surface of the superconducting layer and side surfaces of the first substrate, the intermediate layer, and the superconducting layer. The intermediate layer is laminated on a part of the surface of the first substrate,
The said stabilization layer is a metal film which covers the exposed surface in which the intermediate | middle layer and superconducting layer are not formed in the upper surface and side surface of a superconducting layer, the side surface of an intermediate | middle layer, and the 1st board | substrate upper surface. Superconducting wire. A conductive second substrate sandwiching a superconducting layer with the first substrate;
2. The superconducting wire according to claim 1, wherein the stabilization layer is a metal film that covers an upper surface of the second substrate and side surfaces of the first substrate, the intermediate layer, the superconducting layer, and the second substrate.   The superconducting wire according to claim 1, wherein the stabilization layer is a metal film that covers the upper and lower surfaces and side surfaces of the superconducting wire.

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