JP2005039264A5 - - Google Patents
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- JP2005039264A5 JP2005039264A5 JP2004195074A JP2004195074A JP2005039264A5 JP 2005039264 A5 JP2005039264 A5 JP 2005039264A5 JP 2004195074 A JP2004195074 A JP 2004195074A JP 2004195074 A JP2004195074 A JP 2004195074A JP 2005039264 A5 JP2005039264 A5 JP 2005039264A5
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- electrode
- light emitting
- extending
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Claims (12)
前記電極形成面内において、
前記第1導電型層が露出された第1電極形成部に第1電極、下方に第1,2導電型層に挟まれた発光層を有する発光構造部の第2導電型層に第2電極が設けられ、
前記第2電極が、開口部を有する下部電極と、その上に設けられ台座部を有する上部電極と有し、
前記上部電極が、互いに異なる2方向に延伸する延伸部を有し、
前記下部電極面内において、前記開口部が2次元周期構造を有して、該周期構造が互いに直角方向から傾斜した2つの軸でもって2次元配列されており、
前記周期構造の軸方向と、前記延伸方向が異なることを特徴とする発光素子。 In the light emitting element having the first electrode and the second electrode provided on the same surface side in the light emitting layer and the first and second conductivity type layers sandwiching the light emitting layer,
In the electrode formation surface,
The first electrode is formed on the first electrode forming portion where the first conductive type layer is exposed, and the second electrode is formed on the second conductive type layer of the light emitting structure portion having the light emitting layer sandwiched between the first and second conductive type layers below. Is provided,
The second electrode has a lower electrode having an opening, and an upper electrode provided on the lower electrode,
The upper electrode has an extending portion extending in two different directions,
In the lower electrode surface, the opening has a two-dimensional periodic structure, and the periodic structure is two-dimensionally arranged with two axes inclined from each other at right angles,
The light emitting element characterized by the axial direction of the periodic structure being different from the extending direction.
前記電極形成面内において、
前記第1導電型層が露出された第1電極形成部に第1電極、下方に第1,2導電型層に挟まれた発光層を有する発光構造部の第2導電型層に第2電極が設けられ、
前記第2電極が、複数の開口部を有する下部電極と、その上に設けられ台座部を有する上部電極と有し、
前記第1電極に対向する上部電極の端部が、該対向する方向に傾斜した方向に延伸する延伸端部を有し、
前記下部電極面内において、前記開口部が2次元周期構造を有して、該周期構造が互いに直角方向から傾斜した2つの軸でもって2次元配列されており、
前記周期構造の軸方向と、前記対向する方向が異なることを特徴とする発光素子。 In the light emitting element having the first electrode and the second electrode provided on the same surface side in the light emitting layer and the first and second conductivity type layers sandwiching the light emitting layer,
In the electrode formation surface,
The first electrode is formed on the first electrode forming portion where the first conductive type layer is exposed, and the second electrode is formed on the second conductive type layer of the light emitting structure portion having the light emitting layer sandwiched between the first and second conductive type layers below. Is provided,
The second electrode has a lower electrode having a plurality of openings, and an upper electrode provided on the lower electrode,
An end of the upper electrode facing the first electrode has an extending end extending in a direction inclined in the facing direction;
In the lower electrode surface, the opening has a two-dimensional periodic structure, and the periodic structure is two-dimensionally arranged with two axes inclined from each other at right angles,
A light-emitting element, wherein an axial direction of the periodic structure is different from the facing direction.
前記電極形成面内において、
下方に第1,2導電型層に挟まれた発光層を有する発光構造部の第2導電型層に第2電極として、下部電極と上部電極が設けられ、
前記第1導電型層が露出された第1電極形成部に第1電極を形成する工程、
下部電極を形成した後、マスクを形成して、化学的エッチングにより該下部電極層の一部を除去して、互いに直角方向から傾斜した2つの軸でもって2次元配列させた2次元周期構造の開口部を形成する工程と、
下部電極の上に、互いに異なる2方向であって、前記周期構造の軸方向と異なる方向に延伸する延伸部と、台座部とを有する上部電極を形成する工程と、
を具備してなることを特徴とする発光素子の製造方法。 In the method of manufacturing a light emitting element having a light emitting layer and first and second conductivity type layers sandwiched between the first electrode and the second electrode provided on the same surface side,
In the electrode formation surface,
A lower electrode and an upper electrode are provided as a second electrode on the second conductive type layer of the light emitting structure having a light emitting layer sandwiched between the first and second conductive type layers below,
Forming a first electrode on the first electrode forming portion where the first conductivity type layer is exposed;
After forming the lower electrode, a mask is formed, a part of the lower electrode layer is removed by chemical etching, and the two-dimensional periodic structure is arranged two-dimensionally with two axes inclined from each other at right angles. Forming an opening;
Forming an upper electrode on the lower electrode, the extending portion extending in two directions different from the axial direction of the periodic structure, and a pedestal portion;
A method for manufacturing a light-emitting element, comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004195074A JP4572604B2 (en) | 2003-06-30 | 2004-06-30 | Semiconductor light emitting element and light emitting device using the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003188121 | 2003-06-30 | ||
JP2004195074A JP4572604B2 (en) | 2003-06-30 | 2004-06-30 | Semiconductor light emitting element and light emitting device using the same |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005039264A JP2005039264A (en) | 2005-02-10 |
JP2005039264A5 true JP2005039264A5 (en) | 2007-07-19 |
JP4572604B2 JP4572604B2 (en) | 2010-11-04 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004195074A Expired - Fee Related JP4572604B2 (en) | 2003-06-30 | 2004-06-30 | Semiconductor light emitting element and light emitting device using the same |
Country Status (1)
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JP (1) | JP4572604B2 (en) |
Families Citing this family (35)
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JP2007287851A (en) * | 2006-04-14 | 2007-11-01 | Toyoda Gosei Co Ltd | Light-emitting element and communication device using the same |
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WO2012057469A2 (en) * | 2010-10-25 | 2012-05-03 | 주식회사 세미콘라이트 | Semiconductor light-emitting device |
JP2012114329A (en) * | 2010-11-26 | 2012-06-14 | Toshiba Corp | Semiconductor light-emitting element and method of manufacturing the same |
JP5433609B2 (en) | 2011-03-03 | 2014-03-05 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
JP2012186195A (en) | 2011-03-03 | 2012-09-27 | Toshiba Corp | Semiconductor light-emitting element and method of manufacturing the same |
JP5479391B2 (en) | 2011-03-08 | 2014-04-23 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
JP5549629B2 (en) * | 2011-03-30 | 2014-07-16 | サンケン電気株式会社 | Light emitting element |
JP5304855B2 (en) * | 2011-08-12 | 2013-10-02 | 三菱化学株式会社 | GaN-based light emitting diode and light emitting device using the same |
KR101883842B1 (en) | 2011-12-26 | 2018-08-01 | 엘지이노텍 주식회사 | Light emitting device and illuminating system including the same |
JP6307703B2 (en) | 2013-05-31 | 2018-04-11 | パナソニックIpマネジメント株式会社 | Wavelength converting element, light emitting device including wavelength converting element, vehicle including light emitting device, and method of manufacturing wavelength converting element |
JP2015028984A (en) | 2013-07-30 | 2015-02-12 | 日亜化学工業株式会社 | Semiconductor light emitting element |
CN110676286B (en) * | 2015-02-13 | 2024-01-19 | 首尔伟傲世有限公司 | Light-emitting element and light-emitting diode |
JP6149878B2 (en) | 2015-02-13 | 2017-06-21 | 日亜化学工業株式会社 | Light emitting element |
KR102688853B1 (en) * | 2018-07-18 | 2024-07-29 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | Semiconductor device |
US12062737B2 (en) | 2020-12-17 | 2024-08-13 | Samsung Electronics Co., Ltd. | LED chip and display apparatus including the same |
JP7299515B2 (en) * | 2021-06-01 | 2023-06-28 | 日亜化学工業株式会社 | light emitting element |
Family Cites Families (3)
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JP4810746B2 (en) * | 2000-03-31 | 2011-11-09 | 豊田合成株式会社 | Group III nitride compound semiconductor device |
JP3576963B2 (en) * | 2000-11-24 | 2004-10-13 | 三菱電線工業株式会社 | Semiconductor light emitting device |
MY134305A (en) * | 2001-04-20 | 2007-12-31 | Nichia Corp | Light emitting device |
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2004
- 2004-06-30 JP JP2004195074A patent/JP4572604B2/en not_active Expired - Fee Related
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