JP2005038842A - Display device and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high reliability display device having a structure capable of blocking moisture and oxygen penetration from a sealed region which leads to deterioration in characteristics of the display device, and to provide a manufacturing method thereof. <P>SOLUTION: This display device comprises a display unit which is formed by arranging light-emitting elements composed of organic luminescent materials between a pair of substrates. The display unit is formed on an insulating layer coated on one of the substrates, and the pair of substrates are bonded to each other with a sealing material which is formed on the insulating layer so as to surround the periphery of the display unit. At least one layer of the insulating layers is formed of an organic resin material, and its periphery is composed of a first region and a second region. The insulating layer in the first region has an opening covered with a protective film, and the sealing material is disposed in contact with the opening and the protective film. The peripheral portion of the insulating layer in the second region is covered with the protective film or the sealing material. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a display device (hereinafter referred to as a display device) having an element (hereinafter referred to as a light-emitting element) in which a light-emitting material is sandwiched between electrodes, and a manufacturing method thereof. In particular, the present invention relates to a sealing structure and a method for a display device using a light-emitting material from which EL (Electro Luminescence) can be obtained.

  In recent years, a display device (EL display device) using a light-emitting element (hereinafter referred to as an EL element) using an EL phenomenon of a light-emitting material has been developed. Since the EL display device has a light emitting capability, the EL display device does not require a backlight like a liquid crystal display, and further has advantages such as a wide viewing angle and high contrast.

  In the EL element, by applying a voltage with an organic compound layer sandwiched between a pair of electrodes, electrons injected from the cathode and holes injected from the anode are recombined at the emission center in the organic compound layer, and molecules are formed. It is said that when excitons are formed and the molecular excitons return to the ground state, they emit energy and emit light. Singlet excitation and triplet excitation are known as excited states, and light emission is considered to be possible through either excited state.

  Moreover, although there exist inorganic luminescent material and organic luminescent material in the luminescent material used for EL element, the organic luminescent material with a low drive voltage attracts attention.

  However, an organic EL element using an organic material for the EL element has a problem that light emission characteristics such as light emission luminance and light emission uniformity are significantly deteriorated when driven for a certain period of time. This low reliability is a factor that limits the practical application.

  One factor that deteriorates the reliability is moisture or oxygen that enters the organic EL element from the outside.

  In an EL display device (panel) using EL elements, moisture entering the inside causes a serious decrease in reliability, and causes deterioration in luminance from dark spots, shrinkage, and peripheral portions of the light emitting display device. The dark spot is a phenomenon in which the light emission luminance is partially lowered (including those that do not emit light), and occurs when a hole is formed in the upper electrode. Shrinking is a phenomenon in which luminance deteriorates from the end (edge) of a pixel.

A display device having a structure for preventing the deterioration of the EL element as described above has been developed. There is a method in which an EL element is housed in an airtight container, and a desiccant is placed in a sealed space (see, for example, Patent Document 1).
Japanese Patent Laid-Open No. 9-148066

In addition, a sealing material is formed on the insulator on which the EL element is formed, and the sealed space surrounded by the cover material and the sealing material is filled with a filling material made of resin or the like using the sealing material, and is blocked from the outside. There is also a method (for example, refer to Patent Document 2).
Japanese Patent Laid-Open No. 13-203076

  FIG. 5 shows a top view of the EL display device described in Patent Document 2. FIG. Reference numeral 401 indicated by a dotted line is a source side driver circuit, 402 is a gate side driver circuit, 403 is a pixel portion, and 409 is an FPC (flexible printed circuit). Reference numeral 404 denotes a cover material, 405 denotes a first seal material, and 406 denotes a second seal material. A cross-sectional view of a conventional EL display device as shown in FIG. 5 is shown in FIG. 6 (the second sealing material 406 is not shown). In FIG. 6, 800 is a substrate, 801 is an electrode, 811 is a pixel electrode, 812 is an insulator, 813 is a light emitting layer, 814 is a cathode, and 815 is a light emitting element. As shown in FIG. 6, the EL element is sealed inside by a sealing material 817 in the sealing region.

  In Patent Document 1 and Patent Document 2, the EL element and external moisture are blocked by the sealing material in the sealing region in FIG.

  When the EL element is housed in an airtight container as in Patent Document 1, the EL display device is enlarged by the size of the container. Although the size of the EL display device is increased, the size of the light emitting portion is not changed. In this case, the advantage of thinning that the backlight of the EL display device is unnecessary is not utilized.

  Also in Patent Document 2, since the sealing space is applied to the substrate in the sealing region to create a sealed space, the EL display device cannot be increased in size.

  As described above, when the sealing region is wide, the portion that does not emit light increases, and the display device must be enlarged to obtain a light emitting portion having the same area.

In view of such a problem, a display device having a narrow frame with a sealed region as narrow as possible has also been developed (see, for example, Patent Document 3).
JP 2002-329576 A

  In the said patent document 3, the seal pattern used for sealing is formed on the board | substrate which has a recessed part. Even if the width of the seal pattern in the sealing region is reduced for narrowing the frame, since the surface area of contact between the seal pattern and the substrate is large, a decrease in adhesion strength can be suppressed.

  However, in Patent Document 3, since the same method of applying a sealing material on the substrate in the sealing region is used, there is a limit to narrowing the frame.

  There is a method in which a sealing material is directly applied not on a substrate but on a film such as an interlayer film or a protective film to eliminate a sealing region for applying the sealing material. FIG. 7 shows such an EL display device, and FIG. 14 shows an enlarged end (edge) portion CC ′ of the sealing region as an end portion.

  As shown in FIG. 14, at the end of the display device, the first film 53, the second film 54, the third film 55, and the fourth film 56 are laminated on the substrate 50, and the sealing material 52 is formed on these films. Is applied. With this structure, the sealing region can be reduced. The first film 53, the second film 54, the third film 55, and the fourth film 56 are a base film, a gate insulating film, a protective film, an interlayer film, or a conductive film.

  However, when the sealing material for sealing is on the laminated film as shown in FIG. 14, all the laminated films are in direct contact with the outside air outside the display device. For this reason, water and oxygen outside the display device enter the display device through the laminated films. Furthermore, when a highly moisture-permeable material such as acrylic is used for the interlayer film, the intruding water and oxygen are further increased.

  Moisture and oxygen enter through the acrylic from the interlayer film acrylic and acrylic upper and lower interfaces. The intruded moisture and oxygen finally reach the EL element through a disconnected portion caused by poor film formability of the source and drain electrodes existing in the contact hole. These contaminate the inside of the EL display device and the EL element, and cause various deteriorations such as deterioration of electric characteristics, dark spots and shrinkage.

  Therefore, the present invention provides a highly reliable EL display device and a method for manufacturing the same by blocking moisture and oxygen that intrude, which cause deterioration of the characteristics of the EL element, without increasing the size of the EL display device. This is the issue.

  In the present invention, a film having a function of blocking contaminants entering the display device, protecting the display element, and preventing deterioration is referred to as a protective film.

  One display device of the present invention includes a display portion formed by arranging light-emitting elements using an organic light-emitting material between a pair of substrates, and the display portion is formed over an insulating layer formed over one substrate. The pair of substrates surrounds the outer periphery of the display portion and is fixed by a sealing material formed on the insulating layer. At least one of the insulating layers is formed of an organic resin material, and the outer periphery is formed with the first region and the first region. The insulating layer in the first region has an opening covered with a protective film, and the sealing material is formed in contact with the opening and the protective film, and the insulating layer in the second region The outer end portion is covered with a protective film or a sealing material.

 One display device of the present invention includes a display portion formed by arranging light-emitting elements using an organic light-emitting material between a pair of substrates, and the display portion is formed over an insulating layer formed over one substrate. The pair of substrates surrounds the outer periphery of the display portion and is fixed by a sealing material formed on the insulating layer. At least one of the insulating layers is formed of an organic resin material, and the outer periphery is formed with the first region and the first region. The insulating layer in the first region has a plurality of uneven portions covered with a protective film, and the sealing material is formed in contact with the uneven portions and the protective film, and in the second region The outer end portion of the insulating layer is covered with a protective film or a sealing material.

  One display device of the present invention has a display portion formed by arranging light emitting elements using an organic light emitting material between a first substrate and a second substrate, and the display portion is formed on the first substrate. The first substrate and the second substrate surround the outer periphery of the display portion and are fixed by a sealing material formed on the insulating layer. At least one layer of the insulating layer is made of an organic resin material. The outer periphery has a first region and a second region, the insulating layer and the second substrate in the first region have a plurality of uneven portions, and the plurality of uneven portions of the insulating layer are formed by a protective film. In the first region, the sealing material is formed in contact with the plurality of uneven portions of the insulating layer covered with the protective film and the plurality of uneven portions of the second substrate, and the outer edge of the insulating layer in the second region The part is covered with a protective film or a sealing material.

  One display device of the present invention has a display portion formed by arranging light emitting elements using an organic light emitting material between a first substrate and a second substrate, and the display portion is formed on the first substrate. The first substrate and the second substrate surround the outer periphery of the display portion and are fixed by a sealing material formed on the insulating layer. At least one layer of the insulating layer is made of an organic resin material. Formed, the outer periphery has a first region and a second region, the insulating layer and the second substrate have a plurality of concavo-convex portions covered with a protective film, and the sealing material of the first region is an insulating layer and The second substrate is formed in contact with the plurality of uneven portions and the protective film, and the outer end portion of the insulating layer in the second region is covered with a protective film or a sealing material.

  Since the first substrate having the insulating layer and the second substrate are bonded so that the projections and depressions are engaged with each other, the sandwiched sealing material is pressure-bonded and spreads in the gap between the projections and depressions. Therefore, even if a slight amount of moisture and oxygen may enter from the sealing material, the moisture must travel a long and long distance due to the uneven portion, and it becomes more difficult to enter the display device. Therefore, the contaminant blocking effect is further improved, and a highly reliable display device can be obtained.

 In the above structure, the outer end portion of the insulating layer in the first region may also be covered with a protective film or a sealing material. If the outer end portion of the insulating layer is also covered, the insulating layer is not exposed to the external atmosphere, so that the contaminant blocking effect is further improved. Further, the outer end portion may be covered with a sealing material, but it is preferable to cover the outer end portion with a film thickness and width that do not impair the effect of narrowing the frame.

  In the above configuration, the protective film may be a film selected from a conductive thin film and an insulating thin film, or a film composed of a plurality of types. As the conductive thin film, a film made of one or more elements selected from Al, Ti, Mo, W, or Si may be used. The insulating thin film is selected from silicon nitride, silicon oxide, silicon nitride oxide, aluminum nitride, aluminum oxynitride, aluminum nitride oxide, aluminum oxide, diamond-like carbon (DLC), nitrogen-containing carbon film (CN), and siloxane polymer. Alternatively, a film made of one kind or a plurality of kinds may be used.

  In the above structure, the organic resin material can be one or a plurality of films selected from acrylic, polyamide, polyimide, resist, benzocyclobutene, and siloxane polymer, or a laminate of these films. A siloxane polymer is a material having a skeleton structure composed of a bond of silicon (Si) and oxygen (O) and having at least one of hydrogen, fluorine, an alkyl group, or an aromatic hydrocarbon as a substituent, The film after coating, baking and forming can be called a silicon oxide film (SiOx) containing an alkyl group.

  One embodiment of a method for manufacturing a display device of the present invention includes a display portion formed by arranging light-emitting elements using an organic light-emitting material between a pair of substrates, and the display portion is formed over one substrate. And a pair of substrates are fixed by a sealing material that surrounds the outer periphery of the display portion and formed on the insulating layer, at least one of the insulating layers is formed of an organic resin material, and the outer periphery is formed with the first region. Forming an opening covered with a protective film on the insulating layer in the first area, and forming a sealing material in contact with the opening and the protective film, and forming an insulating layer in the second area; The outer end is covered with a protective film or a sealing material.

  One embodiment of a method for manufacturing a display device of the present invention includes a display portion formed by arranging light-emitting elements using an organic light-emitting material between a pair of substrates, and the display portion is formed over one substrate. The pair of substrates is fixed by a sealing material formed on the insulating layer so as to surround the outer periphery of the display portion, at least one of the insulating layers is formed of an organic resin material, and the outer periphery is formed with the first region and the second region. A plurality of concavo-convex portions covered with a protective film are formed on the insulating layer in the first region, and a sealing material is formed in contact with the concavo-convex portions and the protective film, and the insulating layer in the second region The outer end of is covered with a protective film or a sealing material.

  One method for manufacturing a display device of the present invention includes a display portion in which a light-emitting element using an organic light-emitting material is arranged between a first substrate and a second substrate, and the display portion is formed using the first substrate. The first substrate and the second substrate are fixed by a sealing material formed on the insulating layer so as to surround the outer periphery of the display portion, and at least one of the insulating layers is made of an organic resin material. Forming a plurality of uneven portions on the insulating layer and the second substrate in the first region, covering the plurality of uneven portions of the insulating layer with a protective film, and covering the sealing material with the protective film in the first region The insulating layer is formed in contact with the plurality of uneven portions and the plurality of uneven portions of the second substrate, and the outer end portion of the insulating layer in the second region is covered with a protective film or a sealing material.

 One method for manufacturing a display device of the present invention includes a display portion in which a light-emitting element using an organic light-emitting material is arranged between a first substrate and a second substrate, and the display portion is formed using the first substrate. The first substrate and the second substrate are fixed by a sealing material formed on the insulating layer so as to surround the outer periphery of the display portion, and at least one of the insulating layers is made of an organic resin material. The outer periphery has a first region and a second region, and a plurality of concavo-convex portions covered with a protective film are formed on the insulating layer and the second substrate, and the sealing material of the first region is used as the insulating layer. And formed in contact with the plurality of concave and convex portions and the protective film of the second substrate, and the outer end portion of the insulating layer in the second region is covered with the protective film or the sealing material.

  In order to bond the first substrate having the insulating layer and the second substrate so that the unevenness of the second substrate is engaged, the sandwiched sealing material is crimped and spreads in the gap between the uneven portions. Therefore, even if a slight amount of moisture and oxygen may enter from the sealing material, the moisture must travel a long and long distance due to the uneven portion, and it becomes more difficult to enter the display device. Therefore, the contaminant blocking effect is further improved, and a highly reliable display device can be obtained.

 In the above configuration, the outer end portion of the insulating layer located outside the sealing material may be covered with a protective film. If the outer end portion of the insulating layer is also covered, the insulating layer is not exposed to the external atmosphere, so that the contaminant blocking effect is further improved. Further, the outer end portion may be covered with a sealing material, but it is desirable to cover the outer end portion with a film thickness that does not impair the effect of narrowing the frame.

  In the above configuration, the protective film may be a film selected from a conductive thin film and an insulating thin film, or a film composed of a plurality of types. As the conductive thin film, a film made of one or more elements selected from Al, Ti, Mo, W, or Si may be used. The insulating thin film is selected from silicon nitride, silicon oxide, silicon nitride oxide, aluminum nitride, aluminum oxynitride, aluminum nitride oxide, aluminum oxide, diamond-like carbon (DLC), nitrogen-containing carbon film (CN), and siloxane polymer. Alternatively, a film made of one kind or a plurality of kinds may be used.

  In the above structure, the organic resin material can be one or a plurality of films selected from acrylic, polyamide, polyimide, resist, benzocyclobutene, and siloxane polymer, or a laminate of these films.

  According to the present invention, the moisture passage of the insulating layer containing the organic resin material of the display device is blocked. For this reason, it is possible to prevent water and oxygen outside the display device from entering the display element in the display device through an insulating film containing a hygroscopic organic material. Therefore, various deteriorations such as internal contamination of the display device, deterioration of electrical characteristics, dark spots and shrinkage caused by water and oxygen can be prevented, and the reliability of the display device can be improved. Further, according to the present invention, since a film forming the display device is used as a protective film, a highly reliable display device can be manufactured without increasing the number of steps.

 By adopting the configuration of the present invention, the following effects can be obtained.

 According to the present invention, water and oxygen outside the display device can be prevented from entering the display element in the display device through an insulating film containing an organic material having a hygroscopic property. Therefore, various deteriorations such as internal contamination of the display device, deterioration of electrical characteristics, dark spots and shrinkage caused by water and oxygen can be prevented, and the reliability of the display device can be improved.

  In addition, since the present invention simultaneously forms a film of the same material as the film constituting the display device and uses it as a protective film, a highly reliable display device can be manufactured without increasing the number of steps. .

  Since the display device manufactured as described above has a structure for blocking contaminants in the sealing region at the end of the display device, the operating characteristics and reliability of the display device can be sufficient. An electronic device using the display device of the present invention can also have high reliability.

  Embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in structures of the present invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

[Embodiment 1]
Embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 17 is a top view of a display device according to the present invention. An end AA ′ of the display device in FIG. 17 is shown in FIG. In FIG. 1, an opening is provided in an insulating layer 12 containing an organic resin material, and the opening is covered with a protective film 14. Then, a sealing material 13 is applied on the protective film 14 so as to fill the concave portion generated by the opening, and the substrate 10 having the concave portion and the counter substrate 11 are bonded (fixed). In the present embodiment, the protective film 14 is formed of the same material as the wiring and in the same process.

  In this embodiment mode, an opening is provided only in an insulating layer containing an organic resin material, but an opening is provided in an insulating layer in which a gate insulating film or an interlayer film is stacked, covered with a protective film, and a sealing material is provided. It may be formed. Of course, the laminated film forming the insulating layer may include a conductive film, and in the present invention, it is called an insulating layer in the sense that it includes an organic resin material. A display element using an organic light emitting material is formed on the insulating layer.

  By this protective film, an insulating layer containing an organic resin material that can be a path for pollutants is divided in the display device. For this reason, even if the outer edge of the insulating layer in the display device is exposed to the atmosphere, and water or oxygen outside the display device enters the display device through the interlayer film or the gap between the films, the sealing material and the protective material are protected. It is blocked by the film and cannot enter the display device. Therefore, various deteriorations such as internal contamination of the display device, deterioration of electrical characteristics, dark spots and shrinkage caused by water and oxygen can be prevented, and the reliability of the display device can be improved. In addition, since the protective film is formed using the same material as the film forming the display device at the same time, the reliability of the manufactured display device can be improved without increasing the number of steps.

  The protective film may be a film selected from a conductive thin film and an insulating thin film, or a film composed of a plurality of types. As the conductive thin film, a film made of one or more elements selected from Al, Ti, Mo, W, or Si may be used. The insulating thin film is selected from silicon nitride, silicon oxide, silicon nitride oxide, aluminum nitride, aluminum oxynitride, aluminum nitride oxide, aluminum oxide, diamond-like carbon (DLC), nitrogen-containing carbon film (CN), and siloxane polymer. One kind or plural kinds of films can be used.

  Insulating layer is made of inorganic material (silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, etc.), photosensitive or non-photosensitive organic resin material (polyimide, acrylic, polyamide, polyimide amide, resist, benzocyclobutene, siloxane) A film made of one kind or a plurality of kinds of polymers, etc., or a laminate of these films can be used. The siloxane polymer is an inorganic siloxane containing Si-O-Si bond among compounds composed of silicon, oxygen and hydrogen formed from siloxane-based materials, and hydrogen on silicon is replaced by organic groups such as methyl and phenyl. The organic siloxane insulating material can be formed.

  In addition, a plurality of openings provided in the insulating layer may be provided, and all or a part of the openings may be covered with the protective film and the sealing material. In addition, the opening may be provided at any portion inside the display device.

  In FIG. 1 of the present embodiment, the opening is formed so as to reach the glass substrate, but the structure of the present invention is not limited to this. In other words, it is only necessary to cover an insulating film containing a hygroscopic organic material with a protective film and fill the recess with a sealing material so that the opening can be formed until a film having a dense structure such as a silicon nitride film is reached. May be.

  Further, as shown in FIG. 3, the protective film may be provided not only in one layer but in two or more layers as in the first protective film 34 and the second protective film 35. In FIG. 3, the substrate 30 is fixed to the counter substrate 31 by a sealing material 33, and the insulating layer 32 on the substrate 30 is divided by a protective film 34 and a protective film 35. Therefore, it is necessary to design the coating location of the protective film with a mask or the like so as to avoid a short circuit inside the insulating display device. When the layers are stacked and blocked in this way, the blocking effect of contaminants is further enhanced than the protective film made of a single layer.

  Moreover, it is desirable that the shape of the opening is gentle on the inclined surface to be covered. When the inclined surface of the film of the opening has a film surface, the shape also affects the protective film covering the surface, and destruction occurs where the film thickness is thin. The destroyed film cannot sufficiently block contaminants, and the effect of the present invention is reduced. Therefore, the better the flatness of the surface of the opening, the better the coverage of the protective film formed in an overlapping manner, and the effect of the present invention is further improved. Therefore, wet etching using a photosensitive material for the film in which the opening is provided is preferable because the film surface is less rough and flatness is improved.

  As described above, it is possible to obtain a highly reliable display device in which the display device is narrowed and a contaminant that causes deterioration is blocked.

[Embodiment 2]
Embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 17 is a top view of a display device according to the present invention. FIG. 2 shows an end AA ′ of the display device in FIG. In FIG. 2, the insulating layer 22 containing an organic resin material is provided with a plurality of openings and has uneven portions. The plurality of openings are covered with a protective film 24. In the present embodiment, the counter substrate 21 to be bonded is also provided with an uneven portion toward the substrate 20 side. The counter substrate 21 and the substrate 20 are bonded (fixed) by a sealing material 23 so that the concavo-convex portions are engaged with each other.

  Since the substrate 20 having the insulating layer and the counter substrate 21 are bonded so that the projections and depressions are engaged with each other, the sandwiched sealing material is pressed and spread in the gap between the projections and depressions. Therefore, even if a slight amount of moisture and oxygen may enter from the sealing material, the moisture must travel a long and long distance due to the uneven portion, and it becomes more difficult to enter the display device. Therefore, the contaminant blocking effect is further improved, and a highly reliable display device can be obtained. In this embodiment mode, the protective film is formed of the same material as the wiring and in the same process.

  The number of concavo-convex portions provided on the substrate 20 having the insulating layer and the counter substrate 21 is not limited. Further, the method for engaging the concave and convex portions is not limited to the present embodiment, and the concave portions and the convex portions may be faced to each other or may be shifted and faced.

  The uneven portion of the counter substrate 21 may be formed by processing the substrate, or a film may be formed on the counter substrate 21 so as to have the uneven portion. The material of the film of the concavo-convex portion is preferably a substance similar to the protective film that can block contaminants.

  The protective film 24 may be a film selected from a conductive thin film and an insulating thin film, or a film made of a plurality of types. As the conductive thin film, a film such as an alloy film made of one kind selected from Al, Ti, Mo, W or Si, or a plurality of kinds may be used. The insulating thin film is selected from silicon nitride, silicon oxide, silicon nitride oxide, aluminum nitride, aluminum oxynitride, aluminum nitride oxide, aluminum oxide, diamond-like carbon (DLC), nitrogen-containing carbon film (CN), and siloxane polymer. One kind or plural kinds of films can be used.

  Insulating layer is made of inorganic material (silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, etc.), photosensitive or non-photosensitive organic resin material (polyimide, acrylic, polyamide, polyimide amide, resist, benzocyclobutene, siloxane) A film made of one kind or a plurality of kinds of polymers, etc., or a laminate of these films can be used.

  In this embodiment mode, an opening is provided only in a film containing an organic resin material. However, an opening is provided in an insulating layer in which a gate insulating film or an interlayer film is stacked, and a sealing material is formed by covering the opening with a protective film. May be. Needless to say, the laminated film forming the insulating layer may include a conductive film, and in the present invention, it is called an insulating layer in the sense that it includes at least an organic resin material. A display element using an organic light emitting material is formed on the insulating layer.

 By this protective film, an insulating layer containing an organic resin material that can be a path for pollutants is divided in the display device. For this reason, even if the outer edge of the insulating layer in the display device is exposed to the atmosphere, and water or oxygen outside the display device enters the display device through the interlayer film or the gap between the films, the sealing material and the protective material are protected. It is blocked by the film and cannot enter the display device. Therefore, various deteriorations such as internal contamination of the display device, deterioration of electrical characteristics, dark spots and shrinkage caused by water and oxygen can be prevented, and the reliability of the display device can be improved. In addition, since the protective film is formed using the same material as the film forming the display device at the same time, the reliability of the manufactured display device can be improved without increasing the number of steps.

  The organic resin material used for the insulating layer can be acrylic, polyamide, polyimide, or the like, and is not limited to the material.

  In addition, a plurality of openings provided in the insulating layer may be provided, and all or a part of the openings may be covered with the protective film and the sealing material. In addition, the opening may be provided at any portion inside the display device.

  In FIG. 2 of the present embodiment, the opening is formed so as to reach the glass substrate, but the structure of the present invention is not limited to this. In other words, it is only necessary to cover an insulating film containing a hygroscopic organic material with a protective film and fill the recess with a sealing material so that the opening can be formed until a film having a dense structure such as a silicon nitride film is reached. May be.

  Further, as shown in FIG. 4, two or more protective films may be provided instead of only one layer. In FIG. 4, the substrate 40 is fixed to the counter substrate 41 by a sealing material 43, and the insulating layer 42 on the substrate 40 is divided by a protective film 44 and a protective film 45. At that time, when covering with a conductive film, it is necessary to design the coating position of the protective film with a mask or the like so as to avoid a short circuit inside the display device. When the layers are stacked and blocked in this way, the blocking effect of contaminants is further enhanced than the protective film single layer.

  Moreover, it is desirable that the shape of the opening is gentle on the inclined surface to be covered. When the inclined surface of the film of the opening has a film surface, the shape also affects the protective film covering the surface, and destruction occurs where the film thickness is thin. The destroyed film cannot sufficiently block contaminants, and the effect of the present invention is reduced. Therefore, the better the flatness of the surface of the opening, the better the coverage of the protective film formed in an overlapping manner, and the effect of the present invention is further improved. Therefore, wet etching using a photosensitive material for the film in which the opening is provided is preferable because the film surface is less rough and flatness is improved.

  As described above, it is possible to obtain a highly reliable display device in which the display device is narrowed and the contaminants that cause deterioration are blocked.

 In this embodiment, an example of manufacturing a display device having a dual emission structure using the present invention will be described. In the present invention, the display device is a generic term for a display panel in which a light emitting element formed on a substrate is sealed between the substrate and a cover material, and a display module having a TFT on the display panel. . Note that the light-emitting element includes a layer (light-emitting layer) containing an organic compound from which EL can be obtained, an anode layer, and a cathode layer. Luminescence in an organic compound includes light emission (fluorescence) when returning from a singlet excited state to a ground state and light emission (phosphorescence) when returning from a triplet excited state to a ground state. The EL materials that can be used in the present invention include all luminescent materials that emit light through singlet excitation, triplet excitation, or both.

  In the present invention, all layers formed between the anode and the cathode in the light emitting element are defined as organic light emitting layers. Specifically, the organic light emitting layer includes a light emitting layer, a hole injection layer, an electron injection layer, a hole transport layer, an electron transport layer, and the like. Basically, a light emitting element has a structure in which an anode layer, a light emitting layer, and a cathode layer are sequentially laminated. In addition to this structure, an anode layer, a hole injection layer, a light emitting layer, a cathode layer, and an anode layer , A hole injection layer, a light emitting layer, an electron transport layer, a cathode layer and the like may be laminated in this order.

  A silicon oxynitride film having a thickness of 10 to 200 nm (preferably 50 to 100 nm) is formed by plasma CVD as a base film 301 over a substrate 300 having an insulating surface, and the silicon oxynitride film is formed to have a thickness of 50 to 200 nm (preferably 100 to 100 nm). 150 nm). In this embodiment, a silicon oxynitride film is formed with a thickness of 50 nm and a silicon oxynitride film is formed with a thickness of 100 nm by plasma CVD. As the substrate 300, a glass substrate, a quartz substrate, a silicon substrate, a metal substrate, or a stainless substrate on which an insulating film is formed may be used. Further, a plastic substrate having heat resistance that can withstand the processing temperature of this embodiment may be used, or a flexible substrate may be used. In addition, a two-layer structure may be used as the base film, or a single-layer film or a structure in which two or more layers are stacked may be used.

  Next, a semiconductor film is formed over the base film. The semiconductor film may be formed by a known means (a sputtering method, an LPCVD method, a plasma CVD method, or the like) with a thickness of 25 to 200 nm (preferably 30 to 150 nm). There is no limitation on the material of the semiconductor film, but it is preferably formed of silicon or a silicon germanium (SiGe) alloy.

In this embodiment, an amorphous silicon film having a thickness of 54 nm is formed as a semiconductor film by a plasma CVD method. In this embodiment, a thermal crystallization method and a laser crystallization method using a metal element for promoting crystallization are performed on the amorphous silicon film, or nitrogen gas is not introduced into the amorphous silicon film. Laser crystallization may be performed by heating to 500 ° C. in an atmosphere for 1 hour to release the hydrogen concentration of the amorphous silicon film to 1 × 10 ²⁰ atoms / cm ³ or less. This is because the film is destroyed when the amorphous silicon film containing a large amount of hydrogen is irradiated with laser light.

  Nickel is used as the metal element and is introduced onto the amorphous silicon film by a solution coating method. The method of introducing the metal element into the amorphous silicon film is not particularly limited as long as the metal element can be present on the surface of the amorphous silicon film or inside the amorphous silicon film. For example, sputtering, CVD, A plasma treatment method (including a plasma CVD method), an adsorption method, or a method of applying a metal salt solution can be used. Among these, the method using a solution is simple and useful in that the concentration of the metal element can be easily adjusted. At this time, in order to improve the wettability of the surface of the amorphous semiconductor film and to spread the aqueous solution over the entire surface of the amorphous silicon film, irradiation with UV light in an oxygen atmosphere, thermal oxidation method, hydroxy radical It is desirable to form an oxide film by treatment with ozone water or hydrogen peroxide.

  Thereafter, heat treatment is performed at 500 to 550 ° C. for 4 to 20 hours to crystallize the amorphous silicon film. In this embodiment, nickel is used as the metal element, a metal-containing layer is formed by a solution coating method, introduced onto the amorphous silicon film, and then heat-treated at 550 ° C. for 4 hours to form the first crystalline silicon film. Obtained.

Next, the first crystalline silicon film is irradiated with laser light to promote crystallization, thereby obtaining a second crystalline silicon film. In the laser crystallization method, a semiconductor film is irradiated with laser light. The laser used is preferably a continuous wave solid state laser, a gas laser or a metal laser. Solid-state lasers include continuous wave YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, glass laser, ruby laser, alexandride laser, Ti: sapphire laser, etc., and gas lasers are continuous wave Ar lasers. , Kr laser, CO ₂ laser, and the like, and examples of the metal laser include a continuous wave helium cadmium laser, a copper vapor laser, and a gold vapor laser. A continuous light excimer laser can also be applied. The laser beam may be converted into a harmonic by a non-linear optical element. Crystals used for nonlinear optical elements are superior in terms of conversion efficiency when, for example, LBO, BBO, KDP, KTP, KB5, and CLBO are used. By introducing these nonlinear optical elements into the laser resonator, the conversion efficiency can be greatly increased. Harmonic lasers are generally doped with Nd, Yb, Cr, etc., which are excited to oscillate the laser. The practitioner may select the type of dopant as appropriate.

 As a material for forming the semiconductor film, an amorphous semiconductor (hereinafter also referred to as “AS”) manufactured by a vapor deposition method or a sputtering method using a semiconductor material gas typified by silane or germane is used. A polycrystalline semiconductor crystallized using energy or thermal energy, a semi-amorphous (also referred to as microcrystal or microcrystal, hereinafter, also referred to as “SAS”) semiconductor, or the like can be used.

SAS is a semiconductor having an intermediate structure between amorphous and crystalline structures (including single crystal and polycrystal) and having a third state that is stable in terms of free energy and has a short-range order and a lattice. It includes a crystalline region with strain. A crystal region of 0.5 to 20 nm can be observed in at least a part of the film, and when silicon is the main component, the Raman spectrum shifts to a lower wave number side than 520 cm ^−1. Yes. In X-ray diffraction, diffraction peaks of (111) and (220) that are derived from the silicon crystal lattice are observed. At least 1 atomic% or more of hydrogen or halogen is contained as a neutralizing agent for dangling bonds. The SAS is formed by glow discharge decomposition (plasma CVD) of a silicide gas. As the silicide gas, SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _{4, and the} like can be used. Further, GeF ₄ may be mixed. This silicide gas may be diluted with H ₂ , or H ₂ and one or more kinds of rare gas elements selected from He, Ar, Kr, and Ne. The dilution rate is in the range of 2 to 1000 times. The pressure is generally in the range of 0.1 Pa to 133 Pa, and the power supply frequency is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature may be 300 ° C. or less. As an impurity element in the film, impurities of atmospheric components such as oxygen, nitrogen, and carbon are desirably 1 × 10 ²⁰ cm ⁻¹ or less, and in particular, the oxygen concentration is 5 × 10 ¹⁹ / cm ³ or less, preferably 1 × 10 ¹⁹ / cm ³ or less Alternatively, a compound semiconductor film having an amorphous structure such as an amorphous silicon germanium film or an amorphous silicon carbide film may be used.

  Semiconductor layers 305 to 308 are formed by patterning the crystalline semiconductor film thus obtained using a photolithography method.

  Further, after the semiconductor layers 305 to 308 are formed, a small amount of impurity element (boron or phosphorus) may be doped in order to control the threshold value of the TFT.

  Next, a gate insulating film 309 covering the semiconductor layers 305 to 308 is formed. The gate insulating film 309 is formed of an insulating film containing silicon with a thickness of 40 to 150 nm by using a plasma CVD method or a sputtering method. In this embodiment, a silicon oxynitride film is formed with a thickness of 115 nm by plasma CVD. Of course, the gate insulating film is not limited to the silicon oxynitride film, and another insulating film may be used as a single layer or a laminated structure.

  Next, a first conductive film with a thickness of 20 to 100 nm and a second conductive film with a thickness of 100 to 400 nm are stacked over the gate insulating film. The first conductive film and the second conductive film may be formed using an element selected from Ta, W, Ti, Mo, Al, and Cu, or an alloy material or a compound material containing the element as a main component. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus, or an AgPdCu alloy may be used as the first conductive film and the second conductive film. Further, the present invention is not limited to the two-layer structure. For example, a three-layer structure in which a tungsten film with a thickness of 50 nm, an aluminum-silicon alloy film with a thickness of 500 nm (Al-Si), and a titanium nitride film with a thickness of 30 nm are sequentially stacked. Also good. In the case of a three-layer structure, tungsten nitride may be used instead of tungsten of the first conductive film, or aluminum instead of the aluminum and silicon alloy (Al-Si) film of the second conductive film. A titanium alloy film (Al—Ti) may be used, or a titanium film may be used instead of the titanium nitride film of the third conductive film. Moreover, a single layer structure may be sufficient. In this example, a tantalum nitride film 310 having a thickness of 30 nm and a tungsten film 311 having a thickness of 370 nm are sequentially stacked over the gate insulating film 309 (FIG. 8A).

Next, a resist mask is formed using a photolithography method, and a first etching process for forming electrodes and wirings is performed. Using an ICP (Inductively Coupled Plasma) etching method, the etching conditions (the amount of power applied to the coil-type electrode, the amount of power applied to the electrode on the substrate side, the electrode temperature on the substrate side, etc.) are appropriately set. By adjusting, the first conductive film and the second conductive film can be etched into a desired tapered shape. As an etching gas, a chlorine-based gas typified by Cl ₂ , BCl ₃ , SiCl _4, CCl _4, etc., a fluorine-based gas typified by CF ₄ , SF _6, NF _3, etc., or O ₂ is appropriately used. be able to.

  A first shape conductive layer (first conductive layer and second conductive layer) including the first conductive layer and the second conductive layer is formed by the first etching process.

  Next, a second etching process is performed without removing the resist mask. Here, the W film is selectively etched. At this time, second conductive layers 322b to 326b are formed by a second etching process. On the other hand, the first conductive layers 322a to 326a are hardly etched, and the second shape conductive layers 322 to 326 are formed (FIG. 8B).

Then, a first doping process is performed without removing the resist mask, and an impurity element imparting n-type conductivity is added to the semiconductor layer at a low concentration. The doping process may be performed by ion doping or ion implantation. As an impurity element imparting n-type, an element belonging to Group 15, typically phosphorus (P) or arsenic (As), is used here, but phosphorus (P) is used. In this case, the second shape conductive layers 322 to 326 serve as a mask for the impurity element imparting n-type conductivity, and an impurity region is formed in a self-aligning manner. An impurity element imparting n-type is added to the impurity region in a concentration range of 1 × 10 ¹⁸ to 1 × 10 ²⁰ / cm ³ .

After removing the resist mask, a new resist mask is formed, and the second doping process is performed at a higher acceleration voltage than the first doping process. In the doping treatment, the second conductive layers 323b and 326b are used as masks against the impurity element, and doping is performed so that the impurity element is added to the semiconductor layer below the tapered portion of the first conductive layer. Subsequently, the third doping process is performed by lowering the acceleration voltage than the second doping process. By the second doping process and the third doping process, an impurity element imparting n-type in a concentration range of 1 × 10 ^{18 to} 5 × 10 ¹⁹ / cm ^{3 in} the low-concentration impurity region 335 overlapping with the first conductive layer Is added to the high-concentration impurity regions 334 and 337 with an impurity element imparting n-type in a concentration range of 1 × 10 ^{19 to} 5 × 10 ²¹ / cm ³ .

 Needless to say, by setting the acceleration voltage to be appropriate, the second and third doping processes can be performed in a single doping process to form the low-concentration impurity region and the high-concentration impurity region.

Next, after removing the resist mask, a new resist mask is formed and a fourth doping process is performed. By this fourth doping treatment, impurity regions 343, 344, 347, and 348 in which an impurity element imparting a conductivity type opposite to the one conductivity type is added to the semiconductor layer that becomes the active layer of the p-channel TFT are formed. . Using the second shape conductive layers 322 and 326 as masks against the impurity element, an impurity element imparting p-type conductivity is added to form an impurity region in a self-aligning manner. In this embodiment, the impurity regions 343, 344, 347, and 348 are formed by an ion doping method using diborane (B ₂ H ₆ ). In the fourth doping process, the semiconductor layer for forming the n-channel TFT is covered with a resist mask. Phosphorus is added to the impurity regions at different concentrations by the first to third doping treatments, and the concentration of the impurity element imparting p-type is set to 1 × 10 ^{19 to} 5 × 10 ^{21 in} any of the regions. By performing the doping process so as to be atoms / cm ³ , no problem arises because it functions as the source region and drain region of the p-channel TFT.

  Through the above steps, impurity regions are formed in the respective semiconductor layers (FIG. 8C).

  Next, the resist mask is removed and an insulating film 349 is formed as a passivation film. The insulating film 349 is formed using an insulating film containing silicon with a thickness of 100 to 200 nm by using a plasma CVD method or a sputtering method (FIG. 8D). Needless to say, the insulating film 349 is not limited to a silicon oxynitride film, and another insulating film containing silicon may be used as a single layer or a stacked structure. In this embodiment, a silicon nitride oxide film with a thickness of 150 nm is formed by a plasma CVD method.

  Further, a heat treatment is performed at 300 to 550 ° C. for 1 to 12 hours in a nitrogen atmosphere to perform a step of hydrogenating the semiconductor layer. Preferably, it carries out at 400-500 degreeC. This step is a step of terminating dangling bonds in the semiconductor layer with hydrogen contained in the first insulating film 349. In this embodiment, heat treatment is performed at 410 ° C. for 1 hour.

  The insulating film 349 includes silicon nitride, silicon oxide, silicon oxynitride (SiON), silicon nitride oxide (SiNO), aluminum nitride (AlN), aluminum oxynitride (AlON), and aluminum nitride oxide having a nitrogen content higher than the oxygen content. (AlNO) or aluminum oxide, diamond-like carbon (DLC), and nitrogen-containing carbon film (CN).

  In the present invention, the silicon oxynitride (SiON) film includes Si at 25 to 35 atomic%, oxygen at 55 to 65 atomic%, nitrogen at 1 to 20 atomic%, and hydrogen at 0.1 to 10 atomic%. Show what will be. In addition, as a silicon nitride oxide (SiNO) film, a film containing Si of 25 to 35 atomic%, oxygen of 15 to 30 atomic%, nitrogen of 20 to 35 atomic%, and hydrogen of 15 to 25 atomic% is shown.

  In order to activate the impurity element, heat treatment, intense light irradiation, or laser light irradiation may be performed. Simultaneously with activation, plasma damage to the gate insulating film and plasma damage to the interface between the gate insulating film and the semiconductor layer can be recovered.

  Then, an interlayer film 350 containing an organic resin material is formed over the insulating film 349. The interlayer film 350 includes an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, etc.), a photosensitive or non-photosensitive organic tree material (organic resin material) (polyimide, acrylic, polyamide, polyimide amide, resist , Benzocyclobutene, siloxane polymer, or the like) or a laminate of these films can be used. As the interlayer film, either a negative type that becomes insoluble in an etchant by photosensitive light or a positive type that becomes soluble in an etchant by light can be used. In this embodiment, positive photosensitive acrylic that is a photosensitive organic resin material is used. In this case, it is preferable that only the upper end portion of the interlayer film has a curved surface having a curvature radius (0.2 μm to 3 μm). Thereafter, silicon nitride, silicon oxide, silicon oxynitride (SiON), silicon nitride oxide (SiNO), aluminum nitride (AlN), aluminum oxynitride (AlON), and nitrogen content are higher than oxygen content on the interlayer film 350. A passivation film made of a large amount of aluminum nitride oxide (AlNO) or aluminum oxide, diamond-like carbon (DLC), nitrogen-containing carbon film (CN), or siloxane-based polymer may be formed.

  The interlayer film 350, the insulating film 349, and the gate insulating film 309 are etched to form openings reaching the source region and the drain region. The opening may be formed by etching the interlayer film and then forming a mask again or by etching the insulating film 349 and the gate insulating film using the etched interlayer film 350 as a mask. A metal film is formed, and the metal film is etched to form a source or drain electrode 352 and respective wirings (not shown) that are electrically connected to the respective impurity regions. As the metal film, a film made of an element of aluminum (Al), titanium (Ti), molybdenum (Mo), tungsten (W), or silicon (Si) or an alloy film using these elements may be used. In this embodiment, a titanium film / silicon-aluminum alloy film / titanium film (Ti / Si-Al / Ti) is laminated to 100/350/100 nm, respectively, and then patterned and etched into a desired shape to form a source electrode or A drain electrode 352 and wirings (not shown) are formed.

  In this embodiment, after forming the interlayer film 350 in the sealing region, an opening 1018 reaching the substrate 300 is formed. A protective film 1019 is formed so as to cover the opening 1018. In this embodiment, the protective film 1019 is formed using the same material as the source or drain electrode 352 in the same process.

  Thereafter, the pixel electrode 353 is formed. Note that in this embodiment, a pixel electrode 353 is formed by forming a transparent conductive film and etching it into a desired shape (FIG. 9E).

  As the transparent conductive film, a compound of indium oxide and tin oxide, a compound of indium oxide and zinc oxide, zinc oxide, tin oxide, or indium oxide can be used. Alternatively, a transparent conductive film added with gallium may be used. The pixel electrode 353 may be formed on a flat interlayer insulating film before forming the wiring. It is effective to flatten the step due to the TFT using a flattening film made of resin. Since the light emitting layer formed later is very thin, the presence of a step may cause a light emission failure. Therefore, it is desirable to planarize the pixel electrode before forming it so that the light emitting layer can be formed as flat as possible.

  The active matrix substrate provided with the TFT is completed through the processes as described above. In this embodiment, the n-channel TFT in the pixel region has a double gate structure in which two channel formation regions are formed. However, it has a single gate structure in which one channel formation region is formed or a triple gate structure in which three channel formation regions are formed. There may be. Also, the TFT of the driver circuit portion has a single gate structure in this embodiment, but may have a double gate structure or a triple gate structure.

  Note that not only the TFT manufacturing method shown in this embodiment, but also a top gate type (planar type), a bottom gate type (reverse stagger type), or two gate insulating films disposed above and below the channel region are provided. The present invention can also be applied to a dual gate type or other structure having a gate electrode.

  After the pixel electrode 353 is formed, an insulator 1012 is formed as shown in FIG. The insulator 1012 may be formed by patterning an insulating film containing 100 to 400 nm of silicon or an organic resin film.

Note that since the insulator 1012 is an insulating film, attention must be paid to electrostatic breakdown of the element during film formation. In this embodiment, carbon particles and metal particles are added to an insulating film which is a material of the insulator 1012 to lower the resistivity and suppress the generation of static electricity. At this time, the addition amount of carbon particles or metal particles may be adjusted so that the resistivity is 1 × 10 ⁶ to 1 × 10 ¹² Ωm (preferably 1 × 10 ⁸ to 1 × 10 ¹⁰ Ωm).

A light emitting layer 1013 is formed on the pixel electrode 353. Although only one pixel is shown in FIG. 10, in this embodiment, light emitting layers corresponding to the respective colors R (red), G (green), and B (blue) are separately formed. In this embodiment, a low molecular weight organic light emitting material is formed by a vapor deposition method. Specifically, a laminated structure in which a copper phthalocyanine (CuPc) film having a thickness of 20 nm is provided as a hole injection layer and a tris-8-quinolinolato aluminum complex (Alq ₃ ) film having a thickness of 70 nm is provided thereon as a light emitting layer. It is said. The emission color can be controlled by adding a fluorescent dye such as quinacridone, perylene, or DCM1 to Alq ₃ .

  However, the above example is an example of an organic light emitting material that can be used as a light emitting layer, and it is not absolutely necessary to limit to this. A light emitting layer (a layer for emitting light and moving carriers therefor) may be formed by freely combining a light emitting layer, a charge transport layer, or a charge injection layer. For example, in this embodiment, an example in which a low molecular weight organic light emitting material is used as the light emitting layer is shown, but a medium molecular weight organic light emitting material or a high molecular weight organic light emitting material may be used. Note that in this specification, an organic light-emitting material that does not have sublimation and has 20 or less molecules or a chain molecule length of 10 μm or less is referred to as a medium molecular organic light-emitting material. As an example of using a polymer organic light emitting material, a 20 nm polythiophene (PEDOT) film is provided by a spin coating method as a hole injection layer, and a paraphenylene vinylene (PPV) film of about 100 nm is provided thereon as a light emitting layer. Alternatively, a laminated structure may be used. If a PPV π-conjugated polymer is used, the emission wavelength can be selected from red to blue. It is also possible to use an inorganic material such as silicon carbide for the charge transport layer or the charge injection layer. Known materials can be used for these organic light emitting materials and inorganic materials.

Next, a cathode 1014 made of a conductive film is provided on the light emitting layer 1013. As the cathode, a material having a low work function (Al, Ag, Li, Ca, or an alloy thereof such as MgAg, MgIn, AlLi, CaF ₂ , or CaN) may be used. In this embodiment, a thin metal film (MgAg: film thickness: 10 nm) and a transparent conductive film (ITO (Indium Tin Oxide Alloy), 110 nm thick) are used as the cathode 1014 so as to transmit light. A stack with an indium zinc oxide alloy, zinc oxide, tin oxide, indium oxide, or the like is used.

  When the cathode 1014 is formed, the light emitting element 1015 is completed. Note that the light-emitting element 1015 includes a pixel electrode (anode) 353, a light-emitting layer 1013, and a cathode 1014.

  It is effective to provide the passivation film 1022 so as to completely cover the light emitting element 1015. Examples of the passivation film include silicon nitride, silicon oxide, silicon oxynitride (SiON), silicon nitride oxide (SiNO), aluminum nitride (AlN), aluminum oxynitride (AlON), and oxynitride in which the nitrogen content is higher than the oxygen content The insulating film includes aluminum (AlNO) or aluminum oxide, diamond-like carbon (DLC), nitrogen-containing carbon film (CN), and a siloxane polymer, and a single layer or a combination of the insulating films can be used.

  At this time, it is preferable to use a film with good coverage as the passivation film, and it is effective to use a carbon film, particularly a DLC film. Since the DLC film can be formed in a temperature range from room temperature to 100 ° C., it can be easily formed over the light-emitting layer 1013 having low heat resistance. In addition, the DLC film has a high blocking effect against oxygen and can suppress oxidation of the light-emitting layer 1013. Therefore, the problem that the light emitting layer 1013 is oxidized during the subsequent sealing process can be prevented.

  In this embodiment, a sealing material 1017 is applied on the protective film 1019 so as to fill a concave portion generated by the opening in the sealing region, and the substrate 300 and the cover material 1021 are bonded (fixed). In this embodiment mode, the protective film 1019 is formed of the same material as the wiring and in the same process.

 The sealant 1017 is not particularly limited, and it is typically preferable to use a visible light curable resin, an ultraviolet curable resin, or a thermosetting resin. In this embodiment, a thermosetting epoxy resin is used. In this embodiment, the cover member 1021 is formed by forming a carbon film (preferably a DLC film or a CN film) on both surfaces of a glass substrate, a quartz substrate, a plastic substrate (including a plastic film), or a flexible substrate. In addition to the carbon film, an aluminum film (AlON, AlN, AlO, etc.), SiN, or the like can be used.

  Thus, a dual emission type display device having a structure as shown in FIG. 10 is completed. Further, FIG. 15 shows a structure in which a portion where the insulating layer at the end portion of the display device of this embodiment is exposed is covered with a protective film 1019. In FIG. 15, 1500 is a substrate, 1550 is an interlayer film, 1552 is an electrode, 1512 is an insulator, 1515 is a pixel electrode, 1513 is a light emitting layer, 1514 is a cathode, 1553 is a light emitting element, and 1530 is a passivation film. In the sealing region, an opening 1518 is formed on the substrate 1500 side, and the opening 1518 is covered with a protective film 1519. The substrate 1500 and the cover material 1521 are bonded with a seal material 1517. In this embodiment, the single protective film 1519 covers from the opening to the end of the insulating layer, but the protective film covering the opening and the protective film covering the end of the insulating layer may be separate films. In the structure shown in FIG. 15, the contaminant cannot further enter the display device, and the reliability of the display device is further improved.

 Note that it is effective to continuously perform the process from the formation of the insulator 1012 to the formation of the passivation film using a multi-chamber type (or in-line type) film formation apparatus without opening to the atmosphere. . Further, it is possible to continuously process the process up to the step of bonding the cover material 1021 without releasing to the atmosphere.

  Further, by providing an impurity region overlapping with the gate electrode with an insulating film interposed therebetween, an n-channel TFT that is resistant to deterioration due to the hot carrier effect can be formed. Therefore, a highly reliable display device can be realized.

  Further, in this embodiment, only the configuration of the pixel portion and the drive circuit is shown. However, according to the manufacturing process of this embodiment, other logic circuits such as a signal dividing circuit, a D / A converter, an operational amplifier, and a γ correction circuit are provided. Can be formed on the same insulator, and a memory and a microprocessor can also be formed.

 In this embodiment, an opening 1018 is formed in an insulating layer containing an organic resin material, and a protective film 1019 is formed thereon. Therefore, the insulating layer serving as a path for the contaminant is divided by the protective film, and the contaminant can be prevented from entering the display element. When the protective film 1019 is a conductive film, it is necessary to design a covering place of the protective film with a mask or the like so as to avoid a short circuit inside the display device. Further, as shown in FIG. 4, when the protective film covering the opening is cut off in a laminated structure, the blocking effect of pollutants is further improved than the single layer.

  According to the present invention, the passage of moisture which is an insulating layer containing an organic resin material of a display device is blocked. For this reason, it is possible to prevent water and oxygen outside the display device from entering the display element in the display device through an insulating film containing a hygroscopic organic material. Therefore, various deteriorations such as internal contamination of the display device, deterioration of electrical characteristics, dark spots and shrinkage caused by water and oxygen can be prevented, and the reliability of the display device can be improved. In addition, since the present invention uses a film of the same material as the film forming the display device as a protective film covering the opening, a highly reliable display device can be manufactured without increasing the number of steps. .

 In this example, an example in which the structure of the sealing region is different in the display device manufactured in Example 1 will be described with reference to FIGS.

  In FIG. 11, 1100 is a substrate, 1101 is an electrode, 1111 is a pixel electrode, 1112 is an insulator, 1113 is a light emitting layer, 1114 is a cathode, 1115 is a light emitting element, and 1130 is a passivation film. In the sealing region, concave portions 1121a, 1121b, and 1121c are formed on the substrate 1100 side by openings 1125a, 1125b, and 1125c, and a protective film 1118 covering the openings. On the cover material 1123 side, protrusions 1122a, 1122b, and 1122c are formed by insulators 1120a, 1120b, and 1120c and a protective film 1117 covering the insulators. A substrate 1100 having a concave portion and a cover material 1123 having a convex portion are bonded to each other by a sealant 1119 so that the concave portion and the convex portion face each other.

  In this embodiment, the protective film 1118 is formed of the same material in the same process as the electrode 1101. As the protective films 1118 and 1117, a film selected from a conductive thin film and an insulating thin film, or a film made of a plurality of types may be used. As the conductive thin film, a film made of one or more elements selected from Al, Ti, Mo, W, or Si may be used. The insulating thin film is selected from silicon nitride, silicon oxide, silicon nitride oxide, aluminum nitride, aluminum oxynitride, aluminum nitride oxide, aluminum oxide, diamond-like carbon (DLC), nitrogen-containing carbon film (CN), and siloxane polymer. One kind or plural kinds of films can be used.

  The interlayer film 1124 includes an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, etc.), a photosensitive or non-photosensitive organic resin material (polyimide, acrylic, polyamide, polyimide amide, resist, benzocyclobutene). , A siloxane polymer, or the like) or a laminate of these films can be used. In this embodiment, photosensitive acrylic is used for the interlayer film 1124.

  In this embodiment, in order to have a convex portion on the cover material side, a laminated structure of insulators (called bank, partition wall, barrier, bank, etc.) 1120a, 1120b and 1120c and a protective film 1117 is formed. Is not limited to this. The convex portion may be formed in a single layer structure or a laminated structure with a plurality of films, or the convex portion may be formed by processing a cover material. The processing may be performed mechanically according to the material of the cover material, or may be performed by dry or wet etching. When the convex portion is formed with a film on the cover material side, the material of the convex portion is not particularly limited, and may be a material as used in the above-described protective film or interlayer film. In this embodiment, photosensitive acrylic that is an organic resin material is used for the insulators 1120a, 1120b, and 1120c, and a silicon nitride film is used for the protective film 1117.

  In this embodiment, the recesses 1121a, 1121b, and 1121c in the sealing region are formed until they reach the substrate, but may be up to a dense base film. Since an opening may be formed in a hydrophilic film that becomes a passage for moisture, the formation depth of the opening may be set as appropriate. The protective film covering the opening is also a single layer in this embodiment, but a plurality of layers may be stacked.

  Since the concave portion and the convex portion of the substrate 1100 and the cover material 1123 are bonded so as to be engaged with each other via the sealing material, the sandwiched sealing material is bonded to the gap between the concave and convex portions by spreading. Therefore, even if a slight amount of moisture and oxygen may enter from the sealing material, the moisture must travel a long and long distance due to the uneven portion, and it becomes more difficult to enter the display device.

  Further, FIG. 16 shows a structure in which the insulating film at the end portion of the display device of this embodiment is exposed with a protective film 1118. In FIG. 16, reference numeral 1600 denotes a substrate, 1601 denotes an electrode, 1611 denotes a pixel electrode, 1612 denotes an insulator, 1613 denotes a light emitting layer, 1614 denotes a cathode, 1615 denotes a light emitting element, and 1630 denotes a passivation film. In the sealing region, recesses 1621a, 1621b, and 1621c are formed on the substrate 1600 side by openings 1625a, 1625b, and 1625c and a protective film 1618 covering the openings. On the cover material 1623 side, protrusions 1622a, 1622b, and 1622c are formed by insulators 1620a, 1620b, and 1620c and a protective film 1617 that covers the insulator. A substrate 1600 having a concave portion and a cover material 1623 having a convex portion are bonded to each other by a sealing material 1619 so that the concave portion and the convex portion face each other. In this embodiment, the protective films 1617 and 1618 are covered with a single film from the opening to the end of the insulating layer. However, the protective film covering the opening and the protective film covering the end of the insulating layer may be separate films. . In the structure of FIG. 16, further, contaminants cannot enter the display device, and the reliability of the display device is further improved.

 According to the present invention, even if moisture or oxygen penetrates through an interlayer film 1124 such as an acrylic that is exposed to a sealing material or the outside air, the moisture and oxygen are blocked by the protective film. The TFT can be protected. Therefore, deterioration of the EL display device due to moisture or oxygen can be prevented. In addition, when a plurality of protective films are stacked, the ability to block contaminants such as moisture is further improved. Therefore, the contaminant blocking effect is further improved, and a highly reliable display device can be obtained.

  In this embodiment, the sealing structure is applied to the case of an EL display device, but the sealing structure of the present invention can also be applied to a liquid crystal display device. In that case, a display device using a liquid crystal instead of a light-emitting element may be manufactured using the sealing structure of the present invention.

  In this embodiment, the arrangement of wirings routed around the end portion of the display device will be described with reference to FIG. In this embodiment, the protective film is formed using the same material and the same process as the wiring.

  In FIG. 5, the wiring of the pixel portion at 411 is connected to an FPC (flexible printed circuit). FIG. 17 shows the wiring arrangement of the display device of the present invention. The first anode 2202 having the connection with the FPC on the outermost side of the device is arranged on the outermost side, and the cathode 2201 is arranged on the inner side. Then, a sealing material is formed so as to cover the connection portion between the outermost first anode 2202 and the FPC. The outer periphery of the display device has a first region where the first anode 2202 is formed and a second region which is an FPC connection portion. In the present embodiment, the second region is one side of the outer peripheral portion of the display device having four sides, and the other three sides are the first region.

 FIG. 18 is a cross-sectional view of the display device BB ′ shown in FIG. An electrode 62 connected to the FPC is provided on the substrate 60, and a sealing material 63 is formed thereon. A film such as an interlayer film having an organic resin material under an electrode connected to the FPC is removed by etching or the like, and an insulating layer having an organic resin material or the like is not exposed to the outside. Therefore, the insulating layer including the organic resin material under the sealing material at the end of the display device is completely cut off from the external atmosphere by the protective film and the sealing material which are the same material as the anode. The display device of this embodiment can completely cover the peripheral edge without any gap, and can sufficiently block moisture.

  In addition, as for the arrangement of the wiring, it is only necessary that the outermost wiring is connected to the other FPC or other wiring on the outermost side, and the type, polarity, number, etc. of the wiring may be set as appropriate.

  By applying the present invention, various display devices (active matrix display devices, active matrix EC display devices) can be manufactured. That is, the present invention can be applied to various electronic devices in which these display devices are incorporated in a display portion.

  Such electronic devices include video cameras, digital cameras, projectors, head-mounted displays (goggles type displays), car navigation systems, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones, electronic books, etc.), etc. Can be mentioned. Examples thereof are shown in FIGS.

  FIG. 12A illustrates a personal computer, which includes a main body 3001, an image input portion 3002, a display portion 3003, a keyboard 3004, and the like. By applying the display device manufactured according to the present invention to the display portion 3003, the personal computer of the present invention is completed.

  FIG. 12B illustrates a video camera, which includes a main body 3101, a display portion 3102, an audio input portion 3103, operation switches 3104, a battery 3105, an image receiving portion 3106, and the like. By applying the display device manufactured according to the present invention to the display portion 3102, the video camera of the present invention is completed.

  FIG. 12C illustrates a mobile computer, which includes a main body 3201, a camera unit 3202, an image receiving unit 3203, an operation switch 3204, a display unit 3205, and the like. By applying the display device manufactured according to the present invention to the display portion 3205, the mobile computer of the present invention is completed.

  FIG. 12D illustrates a goggle type display, which includes a main body 3301, a display portion 3302, an arm portion 3303, and the like. The display portion 3302 uses a flexible substrate as a substrate, and the goggle type display is manufactured by curving the display portion 3302. It also realizes a lightweight and thin goggle type display. By applying the display device manufactured according to the present invention to the display portion 3302, the goggle type display of the present invention is completed.

  FIG. 12E shows a player that uses a recording medium (hereinafter referred to as a recording medium) on which a program is recorded, and includes a main body 3401, a display portion 3402, a speaker portion 3403, a recording medium 3404, an operation switch 3405, and the like. This player uses a DVD (Digital Versatile Disc), CD, or the like as a recording medium, and can perform music appreciation, movie appreciation, games, and the Internet. By applying the display device manufactured according to the present invention to the display portion 3402, the recording medium of the present invention is completed.

  FIG. 12F illustrates a digital camera, which includes a main body 3501, a display portion 3502, an eyepiece portion 3503, an operation switch 3504, an image receiving portion (not shown), and the like. By applying the display device manufactured according to the present invention to the display portion 3502, the digital camera of the present invention is completed.

  FIG. 13A illustrates a mobile phone, which includes a main body 3901, an audio output portion 3902, an audio input portion 3903, a display portion 3904, operation switches 3905, an antenna 3906, and the like. By applying the display device manufactured according to the present invention to the display portion 3904, the cellular phone of the present invention is completed.

  FIG. 13B illustrates a portable book (electronic book) which includes a main body 4001, display portions 4002 and 4003, a storage medium 4004, operation switches 4005, an antenna 4006, and the like. A display device manufactured according to the present invention is applied to the display portions 4002 and 4003, whereby the portable book of the present invention is completed.

  FIG. 13C illustrates a display, which includes a main body 4101, a support base 4102, a display portion 4103, and the like. The display portion 4103 is manufactured using a flexible substrate, and a lightweight and thin display can be realized. In addition, the display portion 4103 can be curved. By applying the display device manufactured according to the present invention to the display portion 4103, the display of the present invention is completed.

  As described above, the application range of the present invention is extremely wide and can be applied to electronic devices in various fields.

 In this example, an example of a single emission type in the display device manufactured in Example 1 will be described with reference to FIGS.

 In FIG. 19A, 1900 is a substrate, 1956 is an electrode, 1953 is a pixel electrode, 1913 is a light emitting layer, 1914 and 1923 are cathodes, 1915 is a light emitting element, 1922 is a passivation film, and 1921 is a cover material. In the sealing region, an opening 1918 is formed on the substrate 1900 side, and the opening is covered with a protective film 1919. The cover material 1921 side and the substrate 1900 are fixed by a seal material 1917 formed on the opening and the protective film.

The display device in FIG. 19A is a single-sided emission type and has a structure in which top surface irradiation is performed in the direction of an arrow. In this case, the pixel electrode 1953 corresponds to an anode and is a reflective metal film, and the reflective metal film is a metal having a high work function such as platinum (Pt) or gold (Au) in order to function as an anode. Use a membrane. Further, since these metals are expensive, they may be stacked on an appropriate metal film such as an aluminum film or a tungsten film, and may be a pixel electrode in which platinum or gold is exposed at least on the outermost surface. The cathode 1914 is a thin metal film (preferably 10 to 50 nm), and a material containing an element belonging to Group 1 or Group 2 of the periodic table having a small metal film work function in order to function as a cathode (for example, Al, Ag, Li, Ca, or an alloy thereof such as MgAg, MgIn, AlLi, CaF ₂ , or CaN) is used. Further, an oxide conductive film (typically an ITO film) which is the cathode 1923 is provided over the cathode 1914, and a passivation film 1922 is provided thereover.

  In the case of the structure shown in FIG. 19A, light emitted from the light-emitting element is reflected by the pixel electrode 1953 and emitted through the cathodes 1914 and 1923 and the like.

 In FIG. 19B, 1800 is a substrate, 1856 is an electrode, 1853 is a pixel electrode, 1813 is a light emitting layer, 1814 is a cathode, 1815 is a light emitting element, 1822 is a passivation film, and 1821 is a cover material. In the sealing region, an opening 1818 is formed on the substrate 1850 side, and the opening is covered with a protective film 1819. The cover material 1821 side and the substrate 1800 are fixed by a seal material 1817 formed on the opening and the protective film.

  The display device in FIG. 19B is also a single-sided emission type and has a structure in which the bottom surface is irradiated in the direction of the arrow. In this embodiment, a pixel electrode 1853 corresponding to an anode is formed by forming a transparent conductive film and etching it into a desired shape. As the transparent conductive film, a compound of indium oxide and tin oxide, a compound of indium oxide and zinc oxide, zinc oxide, tin oxide, or indium oxide can be used. The cathode 1814 preferably uses a metal film (thickness: 50 nm to 200 nm) made of Al, Ag, Li, Ca, or an alloy thereof, MgAg, MgIn, AlLi. A passivation film 1822 is provided on the cathode 1814.

  In the case of the structure shown in FIG. 19B, light emitted from the light-emitting element passes through the pixel electrode 1853 and is emitted from the substrate 1800 side.

  According to the present invention, the passage of moisture which is an insulating layer containing an organic resin material of a display device is blocked. For this reason, it is possible to prevent water and oxygen outside the display device from entering the display element in the display device through an insulating film containing a hygroscopic organic material. Therefore, deterioration of the display device can be prevented and the reliability of the display device can be improved.

    A display device was manufactured by applying the present invention, and reliability was evaluated. Specifically, by applying the present invention, the effect of blocking water entering the display device and preventing deterioration such as a decrease in luminance of the light emitting element was confirmed.

    As shown in the third embodiment, the display device is formed so that wiring is routed around the outer periphery of the display panel. A sealing material is formed on the wiring, and the TFT substrate and the counter substrate are fixed. FIG. 20A shows a cross-sectional view of a sealing region with a sealant on the outer periphery of the display panel using the present invention, and FIG. 20B shows the result of reliability evaluation of the display panel.

    In the display panel to which the present invention is applied, a part of the insulating layer 70 is removed, a recess is formed, and protective films 71a and 72a made of the same material as the wiring and the pixel electrode are formed in the same process so as to cover the recess. is doing. Similarly, the outer end portion of the insulating layer 70 is formed so as to cover the protective films 71b and 72b made of the same material as the wiring and the pixel electrode, and a sealing material 73 is formed thereon. The TFT substrate 75 and the counter substrate 76 are fixed by the sealing material 73. As materials, Al was used for wiring, ITO was used for pixel electrodes, and acrylic was used for insulating layers.

    The display panel manufactured as shown in FIG. 20A was stored for 1000 hours in an atmosphere at a temperature of 65 ° C. and a humidity of 95%, and light was emitted by applying a voltage. FIG. 20B is an observation photograph of five locations including four peripheral portions and a central portion in the pixel portion of the display panel to which the present invention is applied. The pixel portion indicated by the photograph is enlarged by a microscope, and can emit light individually to confirm a plurality of pixels constituting the pixel portion. It was confirmed that no deterioration in light emission such as a decrease in luminance or no light emission was observed in the pixel at any point, and no deterioration of the light emitting element contributing to light emission occurred. By applying this invention, it turns out that there existed an effect which interrupt | blocked the approach to the display panel of the water outside a display panel which causes deterioration of a light emitting element.

    As a comparative example, a recess is not formed in the insulating layer, and wirings 81a, 81b, 82a, and 82b including wiring and pixel electrodes are formed on the insulating layer 80, and the TFT substrate 85 is formed by the sealing material 83 formed thereon. The counter substrate 86 is fixed. A cross-sectional view of the display panel of the comparative example is shown in FIG. 21A, and the reliability evaluation result of the display panel is shown in FIG. The insulating layer 80 is exposed to the external atmosphere and is exposed.

    The display panel manufactured as shown in FIG. 21A was stored for 190 hours in an atmosphere at a temperature of 65 ° C. and a humidity of 95%, and then light was emitted by applying a voltage. FIG. 21 (B) is an observation photograph of nine locations of eight peripheral portions and a central portion in the pixel portion of the display panel of the comparative example. The pixel portion indicated by the photograph is enlarged by a microscope, and can emit light individually to confirm a plurality of pixels constituting the pixel portion. Regardless of the fact that only 190 hours have passed, in the pixels in the peripheral portion, the region that does not emit light or the luminance is reduced extends from the four corners of the panel to the pixels of about 3 rows and 7 columns. This is presumably because moisture penetrated from the peripheral portion through the insulating layer 80 and the light emitting material constituting the light emitting element deteriorated.

    Thus, it was confirmed that when the present invention was applied, a reduction in luminance caused by deterioration of the light-emitting element was prevented, and a highly reliable display panel could be manufactured.

The figure which shows the structure of this invention. The figure which shows the structure of this invention. The figure which shows the structure of this invention. The figure which shows the structure of this invention. The figure which shows the conventional structure. Sectional drawing of the conventional EL display apparatus. Sectional drawing of the conventional EL display apparatus. Sectional drawing which shows the manufacturing process of an active matrix matrix board | substrate. Sectional drawing which shows the manufacturing process of an active matrix matrix board | substrate. Sectional drawing of the display apparatus of this invention. Sectional drawing of the display apparatus of this invention. FIG. 11 illustrates an example of a display device. FIG. 11 illustrates an example of a display device. The figure which shows the conventional structure. Sectional drawing of the display apparatus of this invention. Sectional drawing of the display apparatus of this invention. The top view of the display apparatus of this invention. Sectional drawing of the display apparatus of this invention. Sectional drawing of the display apparatus of this invention. Reliability evaluation of the display device of the present invention. Reliability evaluation of display device of comparative example.

Claims (18)

A display unit formed by arranging light emitting elements using an organic light emitting material between a pair of substrates;
The display unit is formed on an insulating layer formed on one substrate,
The pair of substrates surrounds the outer periphery of the display unit, and is fixed by a sealing material formed on the insulating layer,
At least one of the insulating layers is formed of an organic resin material,
The outer periphery has a first region and a second region;
The insulating layer in the first region has an opening covered with a protective film, and the sealing material is formed in contact with the opening and the protective film;
An outer end portion of the insulating layer in the second region is covered with the protective film or a sealing material. A display unit formed by arranging light emitting elements using an organic light emitting material between a pair of substrates;
The display unit is formed on an insulating layer formed on one substrate,
The pair of substrates surrounds the outer periphery of the display unit, and is fixed by a sealing material formed on the insulating layer,
At least one of the insulating layers is formed of an organic resin material,
The outer periphery has a first region and a second region;
The insulating layer in the first region has a plurality of uneven portions covered with a protective film, and the sealing material is formed in contact with the uneven portions and the protective film,
An outer end portion of the insulating layer in the second region is covered with the protective film or a sealing material. A display unit formed by arranging light emitting elements using an organic light emitting material between a first substrate and a second substrate;
The display unit is formed on an insulating layer formed on the first substrate,
The first substrate and the second substrate are fixed by a sealant formed on the insulating layer, surrounding an outer periphery of the display unit,
At least one of the insulating layers is formed of an organic resin material,
The outer periphery has a first region and a second region;
The insulating layer and the second substrate in the first region have a plurality of uneven portions, the plurality of uneven portions of the insulating layer are covered with a protective film, and the sealing material in the first region Formed in contact with the plurality of uneven portions of the insulating layer covered with a protective film and the plurality of uneven portions of the second substrate;
An outer end portion of the insulating layer in the second region is covered with the protective film or a sealing material. A display unit formed by arranging light emitting elements using an organic light emitting material between a first substrate and a second substrate;
The display unit is formed on an insulating layer formed on the first substrate,
The first substrate and the second substrate are fixed by a sealant formed on the insulating layer, surrounding an outer periphery of the display unit,
At least one of the insulating layers is formed of an organic resin material,
The outer periphery has a first region and a second region;
The insulating layer and the second substrate have a plurality of concave and convex portions covered with a protective film,
The sealing material in the first region is formed in contact with the insulating layer, the plurality of uneven portions of the second substrate, and the protective film,
An outer end portion of the insulating layer in the second region is covered with the protective film or a sealing material. In any one of Claims 1 thru | or 4,
A display device, wherein an outer end portion of the insulating layer in the first region is covered with the protective film or a sealing material.   6. The display device according to claim 1, wherein the protective film is made of one or more kinds selected from a conductive thin film or an insulating thin film.   7. The display device according to claim 6, wherein the conductive thin film is made of one or more elements selected from Al, Ti, Mo, W or Si elements.   8. The display device according to claim 6, wherein the insulating thin film is made of one kind or plural kinds selected from a silicon nitride film, a silicon nitride oxide film, or a nitrogen-containing carbon film.   9. The display device according to claim 1, wherein the organic resin material is one or more selected from acrylic, polyamide, polyimide, or silicon oxide containing an alkyl group. A display unit formed by arranging light emitting elements using an organic light emitting material between a pair of substrates;
The display portion is formed on an insulating layer formed on one substrate,
The pair of substrates is fixed by a sealing material formed on the insulating layer so as to surround an outer periphery of the display unit,
At least one of the insulating layers is formed of an organic resin material,
The outer periphery has a first region and a second region;
Forming an opening covered with a protective film on the insulating layer in the first region, and forming the sealing material in contact with the opening and the protective film;
A method for manufacturing a display device, wherein an outer end portion of the insulating layer in the second region is covered with the protective film or a sealing material. A display unit formed by arranging light emitting elements using an organic light emitting material between a pair of substrates;
The display portion is on an insulating layer formed on one substrate,
The pair of substrates is fixed by a sealing material formed on the insulating layer so as to surround an outer periphery of the display unit,
At least one of the insulating layers is formed of an organic resin material,
The outer periphery has a first region and a second region;
Forming a plurality of uneven portions covered with a protective film on the insulating layer in the first region, and forming the sealing material in contact with the uneven portions and the protective film;
A method for manufacturing a display device, wherein an outer end portion of the insulating layer in the second region is covered with the protective film or a sealing material. A display unit formed by arranging light emitting elements using an organic light emitting material between a first substrate and a second substrate;
Forming the display unit on an insulating layer formed on the first substrate;
The first substrate and the second substrate are fixed by a sealing material formed on the insulating layer so as to surround an outer periphery of the display unit,
At least one of the insulating layers is formed of an organic resin material,
Forming a plurality of uneven portions on the insulating layer and the second substrate in the first region, and covering the plurality of uneven portions of the insulating layer with a protective film;
Forming the sealing material in contact with the plurality of uneven portions of the insulating layer covered with the protective film and the plurality of uneven portions of the second substrate in the first region,
A manufacturing method of a display device, wherein an outer end portion of the insulating layer in the second region is formed by the protective film or a sealing material. A display unit formed by arranging light emitting elements using an organic light emitting material between a first substrate and a second substrate;
Forming the display unit on an insulating layer formed on the first substrate;
The first substrate and the second substrate are fixed by a sealing material formed on the insulating layer so as to surround an outer periphery of the display unit,
At least one of the insulating layers is formed of an organic resin material,
The outer periphery has a first region and a second region;
Forming a plurality of concave and convex portions covered with a protective film on the insulating layer and the second substrate;
Forming the sealing material in the first region in contact with the insulating layer, the plurality of uneven portions of the second substrate, and the protective film;
A method for manufacturing a display device, wherein an outer end portion of the insulating layer in the second region is covered with the protective film or a sealing material. In any one of claims 10 to 13,
A method for manufacturing a display device, wherein an outer end portion of the insulating layer in the first region is covered with the protective film or the sealing material.   The method for manufacturing a display device according to claim 10, wherein the protective film is made of one or more kinds selected from a conductive thin film or an insulating thin film.   16. The method for manufacturing a display device according to claim 15, wherein the conductive thin film is formed of one or more elements selected from Al, Ti, Mo, W, or Si.   17. The method for manufacturing a display device according to claim 15, wherein the insulating thin film is formed of one kind or plural kinds selected from a silicon nitride film, a silicon nitride oxide film, or a nitrogen-containing carbon film. . 18. The display device according to claim 10, wherein the organic resin material is formed of one kind or a plurality of kinds selected from acrylic, polyamide, polyimide, or silicon oxide containing an alkyl group. Manufacturing method.