JP2005037958A - Semiconductor integrated circuit and method for fabricating same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce the thickness of a display device by mechanically bonding only a semiconductor integrated circuit to a substrate of the display device and electrically connecting the circuit to the substrate. <P>SOLUTION: In a method for fabricating the semiconductor integrated circuit having a base film, a thin film transistor and a passivation film, variation in kinds, thickness, and sizes of other substrates is made possible by releasing the semiconductor integrated circuit fabricated on a substrate from the substrate and fixing only the semiconductor integrated circuit to the other substrate. For example, an extremely thin film shaped substrate is also used. Furthermore, restriction concerning the kinds of the other substrates is alleviated, and consequently a material light in weight and with high impact resistance such as a plastics substrate can be used and portability is also improved. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

The present invention relates to a passive matrix type or active matrix type display device such as a liquid crystal display device, and more particularly to a fashion in which the area occupied by the substrate of the display device is increased by effectively mounting a semiconductor integrated circuit for driving. An object is to obtain a reasonable display device.

As matrix type display devices, passive matrix type and active matrix type structures are known. In the passive matrix type, a large number of strip-shaped electric wirings (low wirings) made of a transparent conductive film or the like are formed on a first substrate in a certain direction, and the first substrate is formed on the first substrate.
The same strip-shaped electrical wiring (column wiring) is formed in a direction substantially perpendicular to the electrical wiring on the substrate. And a board | substrate is arrange | positioned so that the electrical wiring on both board | substrates may oppose.

If an electro-optic material whose translucency, light reflection / scattering property is changed by voltage, current, etc., like a liquid crystal material, is provided between the substrates, any row wiring of the first substrate and the second substrate If a voltage, current, or the like is applied to an arbitrary column wiring, the light transmitting property, light reflection / scattering property, etc. of the intersecting portion can be selected. In this way, matrix display is possible.

In the active matrix type, a row wiring and a column wiring are formed on a first substrate using a multilayer wiring technique, and a pixel electrode is provided at an intersection of the wiring, and a thin film transistor (TFT) or the like is provided on the pixel electrode. An active element is provided to control the potential and current of the pixel electrode. A transparent conductive film is also provided over the second substrate, and the substrate is disposed so that the pixel electrode of the first substrate and the transparent conductive film of the second substrate face each other.

In any case, the substrate material used was selected by the fabrication process. For example,
In the passive matrix type having no particularly complicated process other than forming a transparent conductive film and etching it to form a row / column wiring pattern, the substrate may be plastic as well as glass. On the other hand, in an active matrix type that has a relatively high temperature film formation step and needs to avoid mobile ions such as sodium, it is necessary to use a glass substrate with a very low alkali concentration as the substrate.

In any case, in the conventional matrix type display device, it is necessary to attach a semiconductor integrated circuit (peripheral drive circuit or bar circuit) for driving the matrix except for a special one. Traditionally, this has been achieved by tape automated bonding (TAB) and chip
It has been done by the on-glass (COG) method.
However, since the matrix has a large scale of several hundred lines, the number of terminals of the integrated circuit is very large. On the other hand, the driver circuit to be used is a rectangular IC package or a semiconductor chip. Since it is necessary to route the wiring in order to connect the terminal to the electrical wiring on the substrate, the area of the peripheral portion becomes larger than the display screen, which cannot be ignored.

As a method for solving this problem, Japanese Patent Laid-Open No. 7-14880 discloses that a driver circuit is formed on an elongated substrate (referred to as a stick or a stick crystal) that is approximately the same as one side of the matrix, and is formed on the matrix. A method of connecting to the terminal portion is disclosed. As the driver circuit, a width of about 2 mm is sufficient, and this arrangement is possible. For this reason, most of the substrates could be used as display screens.

Of course, in this case, since the circuit cannot be formed on the silicon wafer if the matrix area is large, it is necessary to form the circuit on a glass substrate or the like. Therefore, an active element used for a semiconductor circuit formed on a glass substrate or the like is a TFT using a crystalline or amorphous semiconductor.

However, for stick crystals, the thickness of the driver circuit board is
This hindered the miniaturization of the entire display device. For example, it is possible to reduce the thickness of the substrate to 0.3 mm because the display device needs to be thinner by optimizing the type and process of the substrate. However, the thickness of the stick crystal is 0.5m from the strength required in the manufacturing process.
It is difficult to set it to m or less, and as a result, when the substrates are bonded together, a stick crystal will appear 0.2 mm or more.

Further, when the types of the stick crystal and the substrate of the display device are different, a circuit may be defective due to a difference in thermal expansion.
In particular, when a plastic substrate is used as the substrate of the display device, this problem is remarkable. This is because using plastic as the substrate for the stick crystal
This is because it is substantially impossible from the viewpoint of heat resistance.
The object of the present invention is to solve such problems of the stick crystal and to further reduce the size and weight of the display device.

In the present invention, a driver circuit portion is thinned by mechanically bonding only a semiconductor integrated circuit equivalent to a stick crystal on a substrate of a display device and making an electrical connection. In addition, high throughput is realized by performing electrical connection all at once by heat treatment.

The basic structure of the present invention is such that the surface of the first substrate having the electric wiring and the elongated semiconductor integrated circuit electrically connected to the TFT and having the TFT is transparent to the surface on which the electric wiring is formed. A display device having a structure in which a transparent conductive film of a second substrate having a conductive film is opposed to each other.
Similar to the stick crystal of 14880, the semiconductor integrated circuit is roughly equal to the length of one side of the display surface (that is, the matrix) of the display device, and is peeled off the one formed on another substrate. And mounted on the first substrate.

In particular, in the case of a passive matrix type, the first of the plurality of transparent conductive films extending in the first direction.
A first substrate having a first semiconductor integrated circuit connected to the first wiring and having a TFT and extending in a second direction substantially perpendicular to the first direction; and in a second direction A second substrate having a plurality of transparent conductive film extending to the second electrical wiring and a second semiconductor integrated circuit connected to the second electric wiring and having a TFT and extending in the first direction; The display device is arranged so that the electric wiring and the second electric wiring face each other, and the first and second semiconductor integrated circuits are manufactured by peeling off those manufactured on other substrates and mounting them on the respective substrates. It is.

In the case of the active matrix type, a plurality of first electric wirings extending in the first direction and a TFT connected to the first electric wiring and extending in a second direction substantially perpendicular to the first direction are provided. One semiconductor integrated circuit, a plurality of second electrical wirings extending in the second direction, and TF connected thereto
A first substrate having a second semiconductor integrated circuit having T and extending in a first direction; and a second substrate having a transparent conductive film on a surface thereof, the first and second of the first substrate. In the display device arranged so that the electrical wiring of the second substrate and the transparent conductive film of the second substrate face each other, the first and second semiconductor integrated circuits are separated from those manufactured on the other substrate. And mounted on the first substrate.

A method of forming a semiconductor integrated circuit having a TFT on another substrate, peeling it off and bonding it to another substrate (or removing the original substrate after bonding to the other substrate) is a general method. Is known as one of the SOI (silicon on insulator) technologies.
504139, other known techniques, or techniques used in the following embodiments may be used.

FIG. 1 shows an example of a cross-sectional structure of a display device of the present invention.
FIG. 1A is a view at a relatively small magnification. The left side of the figure shows the driver circuit unit 1 provided with the semiconductor integrated circuit, and the right side shows the matrix unit 2. Metal wiring 4 and semiconductor integrated circuit 6 are mechanically fixed on substrate 3 with resin 5.
Furthermore, the electrical wiring 12 and the metal wiring 4 made of a material such as a transparent conductive film disposed on the substrate 3.
These are melted and electrically connected by heating the overlapping portion by laser irradiation. At this time, it is desirable that the metal wiring 4 be easily melted. Therefore, low melting point metals such as aluminum, indium, tin, and gold are desirable.

FIG. 1B is an enlarged view of the area surrounded by the dotted line in FIG. The sign is
The same thing as FIG. 1 (A) is shown. The semiconductor integrated circuit includes an N-channel TFT 7 and a P-channel T
The FT 8 has a structure sandwiched between the base insulating film 9, the interlayer insulator 10, or a passivation film 11 such as silicon oxide. (Fig. 1 (B))

Regarding the contact portion between the metal wiring 4 and the wiring electrode 12, in addition to the laser welding method, as shown in FIG. 3A, the metal wiring 33 is formed on a substrate 40 provided with an electric wiring 31 such as a transparent conductive film.
The semiconductor integrated circuit 34 accompanied with the above may be fixed with an anisotropic conductive adhesive, and electrically connected by heating and pressure bonding.
FIG. 3 (B / C) is an enlarged view of the connecting portion. Connection with anisotropic conductive adhesive 35 (FIG. 3B
)), The metal wiring 33 and the electric wiring 31 are formed by the conductive particles 36 in the anisotropic conductive adhesive.
Are electrically connected. Furthermore, as shown in FIG. 3C, a method of arranging bumps 37 made of a low melting point metal on the wiring electrode 31 in advance and then melting the bumps 37 by heating to establish an electrical connection is also possible. .

An outline of the manufacturing order of such a display device is shown in FIG. FIG. 2 shows a manufacturing procedure of a passive matrix display device. First, a large number of semiconductor integrated circuits 22 are formed on a suitable substrate 21. (Fig. 2 (A))

And this is divided and the stick crystals 23 and 24 are obtained. The obtained stick crystal may be selected as a non-defective product or a defective product by testing the electrical characteristics before moving to the next process. (Fig. 2 (B))

Next, the semiconductor integrated circuits 29 and 30 of the stick crystals 23 and 24 are formed on the surfaces 26 and 2 of the wiring patterns formed of the transparent conductive film of the other substrates 25 and 27 by the SOI technique.
Glue on 8 and make electrical connection. (FIG. 2 (C), FIG. 2 (D))

Finally, a passive matrix display device is obtained by facing the substrates thus obtained. Note that the surface 26 means a surface opposite to the surface 26, that is, a surface on which a wiring pattern is not formed (FIG. 2G).

In the above case, a low stick crystal (a stick crystal for a driver circuit that drives a row wiring) and a column stick crystal (a stick crystal for a driver circuit that drives a column wiring) from the same substrate 21. Although it cut out, it cannot be overemphasized that it may cut out from another board | substrate.
In addition, although an example of a passive matrix display device is shown in FIG. 2, it goes without saying that the same can be applied to an active matrix display device. Further, the case where a material such as a film is formed as a substrate is shown in the examples.

In the present invention, various variations are possible with respect to the type, thickness, and size of the substrate of the display device. For example, as shown in Example 1, an extremely thin film-like liquid crystal display device can be obtained. In this case, the display device may be attached to a curved surface. Furthermore, as a result of relaxing restrictions on the type of substrate, it is possible to use a light and impact-resistant material such as a plastic substrate, which improves portability.

In addition, since the area occupied by the driver circuit is small, the degree of freedom of arrangement of the display device and other devices increases. Typically, the driver circuit can be pushed into an area of several mm in width around the display surface, so that the display device itself is a very simple and fashionable product. The range of application is also various, and thus the industrial value of the present invention is extremely high.

This example shows an outline of a manufacturing process of one substrate of a passive matrix liquid crystal display device. This embodiment will be described with reference to FIGS. FIG. 4 shows an outline of a process for forming a driver circuit on a stick crystal, and FIG. 5 shows an outline of a process for mounting the driver circuit on a substrate of a liquid crystal display device.

First, a 300 nm-thick silicon film 51 was deposited on the glass substrate 50 as a release layer. Since the silicon film 51 is etched when the circuit and substrate formed thereon are separated from each other, the film quality is hardly a problem. Therefore, the silicon film 51 may be deposited by a mass production method. Furthermore, the silicon film may be amorphous or crystalline, and may contain other elements.

The glass substrate is Corning 7059, 1737, NH Techno Glass NA45,
35, non-alkali or low alkali glass such as Nippon Electric Glass OA2, or quartz glass may be used. In the case of using quartz glass, the cost becomes a problem, but in the present invention, the area used for one liquid crystal display device is extremely small, so the cost per unit is sufficiently small.

A silicon oxide film 53 having a thickness of 200 nm was deposited on the silicon film 51. Since this silicon oxide film serves as a base film, sufficient care is required for its production. Then, crystalline island-like silicon regions (silicon islands) 54 and 55 were formed by a known method. The thickness of the silicon film greatly affects the required characteristics of the semiconductor circuit, but in general, a thinner one is preferred. In this embodiment, the thickness is 40 to 60 nm.

In order to obtain crystalline silicon, a method of irradiating strong light such as a laser to amorphous silicon (laser annealing method) or a method of solid phase growth by thermal annealing (solid phase growth method) is used. When using the solid phase growth method, as disclosed in JP-A-6-244104, if a catalytic element such as nickel is added to silicon, the crystallization temperature can be lowered and the annealing time can be shortened. Further, as described in JP-A-6-318701, silicon crystallized once by the solid phase growth method may be laser-annealed. Which method to use
What is necessary is just to determine by the characteristic of the required semiconductor circuit, the heat-resistant temperature of a board | substrate, etc.

Thereafter, a gate oxide film 56 of silicon oxide having a thickness of 120 nm was deposited by plasma CVD or thermal CVD, and gate electrodes / wirings 57 and 58 were formed by using crystalline silicon having a thickness of 500 nm. The gate wiring may be a metal such as aluminum, tungsten, or titanium, or a silicide thereof. Further, when forming a metal gate electrode, as disclosed in JP-A-5-267667 or 6-338612, the upper surface or side surface thereof may be coated with an anodic oxide. What kind of material the gate electrode is made of may be determined by the required characteristics of the semiconductor circuit, the heat-resistant temperature of the substrate, and the like. (
(Fig. 4 (A))

Thereafter, N-type and P-type impurities were introduced into the silicon island by means such as ion doping in a self-aligned manner to form the N-type region 59 and the P-type region 60. Then, an interlayer insulator (silicon oxide film having a thickness of 500 nm) 61 was deposited by a known means. And
A contact hole was opened in this, and aluminum alloy wiring 62-64 was formed. (Fig. 4
(B))

Further, a polyimide film 70 was formed thereon as a passivation film. The polyimide film is formed by applying and curing varnish. In this example, Photo Nice UR-3800 manufactured by Toray Industries, Inc. was used. First, apply with a spinner. The application conditions may be determined according to the desired film thickness. Here, a polyimide film of about 4 μm was formed under the condition of 3000 rpm · 30 seconds. After drying, this is exposed and developed. A desired pattern can be obtained by appropriately selecting conditions. Then, the film | membrane was hardened by processing at 300 degreeC in nitrogen atmosphere. Further, an aluminum metal wiring 90 was formed thereon by sputtering. (Fig. 4
(C))

Subsequently, the transfer substrate 72 is bonded to the semiconductor integrated circuit with a resin 71. The transfer substrate only needs to have strength and flatness for temporarily holding the integrated circuit, and glass, plastic, or the like can be used. Since the transfer substrate is peeled off later, the resin 71 is preferably made of a material that can be easily removed. Moreover, you may use what peels easily, such as an adhesive. (Fig. 5 (A))

The substrate thus treated was left in a stream of mixed gas of chlorine trifluoride (ClF ₃ ) and nitrogen. The flow rates of chlorine trifluoride and nitrogen were both 500 sccm. Reaction pressure is 1-10
Torr. The temperature was room temperature. A halogenated fluorine such as chlorine trifluoride is known to selectively etch silicon. On the other hand, silicon oxide is hardly etched. Therefore, the peeling layer 51 is etched with time, but the underlying layer 53 is hardly etched and the TFT element is not damaged. When more time elapses, the release layer 5
1 is completely etched, and the semiconductor integrated circuit is completely peeled off. (Fig. 5 (B))

Next, the peeled semiconductor integrated circuit is bonded to the substrate 75 of the liquid crystal display device with a resin 76, and the transfer substrate 72 is removed. (Fig. 5 (C))
In this way, the transfer of the semiconductor integrated circuit onto the substrate of the display device was completed. As the substrate of the liquid crystal display device, PES (polyether sulfone) having a thickness of 0.3 mm was used.

Lastly, the YAG laser 85 irradiates and heats the overlapping portion of the wiring electrode 80 and the metal wiring 90 disposed on the substrate of the liquid crystal display device to make electrical connection. (Fig. 5 (D))

In this way, the formation of the semiconductor integrated circuit on one substrate of the liquid crystal display device was completed. A liquid crystal display device is completed using the substrate thus obtained.

This embodiment shows an outline of a process for electrically connecting wiring on a substrate of a liquid crystal display device and metal wiring of a semiconductor integrated circuit. This embodiment will be described with reference to FIG. FIG. 6 is an enlarged view of a connection portion between the wiring electrode on the substrate of the liquid crystal display device and the metal wiring of the semiconductor integrated circuit.

A wiring electrode 101 made of a transparent conductive film is formed on the substrate 100 of the liquid crystal display device by a sputtering method. Further, a pad 102 made of a low melting point metal is formed by a sputtering method at a location electrically connected to the semiconductor integrated circuit.

Next, the semiconductor integrated circuit and the metal wiring 103 manufactured over another substrate are mechanically fixed through the adhesive 104 by the method described in Embodiment 1 (FIG. 6A).

Finally, the YAG laser 106 is used to melt the portion where the metal wiring 103 and the pad 102 overlap to complete the electrical connection 108. (Fig. 6 (B))

Here, laser irradiation is performed from above the metal wiring 103, but the same effect can be obtained by irradiation from the lower side of the substrate 100.

The example of the cross-section of this invention is shown. An outline of a method for manufacturing a display device of the present invention will be described. 1 illustrates a cross-sectional structure of a display device according to an example of the present invention. An example of a manufacturing process of a semiconductor integrated circuit used in the present invention will be described. A process of bonding a semiconductor integrated circuit to a substrate of a display device is shown. An example of the electrical connection process of the wiring used in the present invention is shown.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Driver circuit part of liquid crystal display device 2 ... Matrix part of liquid crystal display device 3 ... Substrate of liquid crystal display device 4 ... Metal electrode 5 ... Resin 6 ... Semiconductor integrated circuit 7 .. N-channel TFT
8 ... P-channel TFT
DESCRIPTION OF SYMBOLS 9 ... Base film 10 ... Interlayer insulating film 11 ... Passivation film 12 ... Wiring electrode of liquid crystal display device 21 ... Substrate on which a stick crystal is formed 22 ... Semiconductor integrated circuit 23, 24 Stick crystal 25, 27 Substrate 26, 28 of liquid crystal display device Surface on which wiring pattern is formed 29, 30 Driver circuit transferred onto substrate of liquid crystal display device 26 ... Surface on which wiring pattern is formed Reverse surface 31 ... Electrode of liquid crystal display device 32 ... Resin 33 ... Metal electrode 34 ... Semiconductor integrated circuit 35 ... Anisotropic conductive adhesive 36 ... Conductive particles 37 ··· Bump 40 ··· substrate of liquid crystal display device 50 ··· substrate for manufacturing semiconductor integrated circuit 51 ··· release layer 53 ··· base film 54 · 55 silicon eye Land 56 ... Interlayer insulating film 57/58 Gate electrode 59 ... N-type region 60 ... P-type region 61 ... Gate insulating film 62-64 Aluminum alloy electrode 70 ... Passivation film 71 ... Adhesive 72 ... Transfer substrate 75 ... Liquid crystal display device substrate 76 ... Resin 80 ... Liquid crystal display device wiring electrode 85 ... Laser beam 90 ... Metal electrode 100 ... Liquid crystal Display device substrate 101 ... Transparent conductive film 102 ... Pad 103 ... Metal wiring 104 ... Adhesive 106 ... Laser beam 108 ... Electrical connection location

Claims (28)

A base film made of a silicon oxide film;
A thin film transistor using crystalline silicon formed on a base film made of the silicon oxide film;
A passivation film having flatness formed on the thin film transistor;
A first plastic substrate fixed on the passivation film;
A semiconductor integrated circuit comprising: a second plastic substrate fixed to the base film. A base film made of a silicon oxide film;
A crystalline silicon film formed on a base film made of the silicon oxide film;
A gate insulating film formed on the crystalline silicon film;
A gate electrode formed on the gate insulating film;
An interlayer insulating film formed on the gate electrode;
A thin film transistor having a first wiring formed on the interlayer insulating film and connected to the crystalline silicon film through a first contact hole formed in the interlayer insulating film;
A passivation film having flatness formed on the first wiring;
A second wiring formed on the passivation film and electrically connected to the thin film transistor through a second contact hole formed in the passivation film;
A first plastic substrate fixed on the passivation film and the second wiring;
A semiconductor integrated circuit comprising: a second plastic substrate fixed to the base film. In claim 2,
2. The semiconductor integrated circuit according to claim 1, wherein the crystalline silicon film is obtained by irradiating amorphous silicon with light. In claim 2,
2. The semiconductor integrated circuit according to claim 1, wherein the crystalline silicon film is obtained by heating amorphous silicon. In claim 2,
2. The semiconductor integrated circuit according to claim 1, wherein the crystalline silicon film is obtained by heating after adding a catalytic element to amorphous silicon. In claim 5,
A semiconductor integrated circuit, wherein the catalyst element is nickel. In any one of Claims 2 thru | or 6,
The semiconductor integrated circuit according to claim 1, wherein the gate electrode is aluminum, tungsten, titanium, tungsten silicide, or titanium silicide. In any one of Claims 2 thru | or 7,
2. The semiconductor integrated circuit according to claim 1, wherein the interlayer insulating film is silicon oxide. In any one of Claims 1 thru | or 8,
2. The semiconductor integrated circuit according to claim 1, wherein the second plastic substrate is polyethersulfone. In any one of Claims 1 thru | or 9,
The semiconductor integrated circuit according to claim 1, wherein the passivation film is a polyimide film. A method for manufacturing a semiconductor integrated circuit having a base film made of a silicon oxide film, a thin film transistor, and a passivation film having flatness,
Forming a release layer on the glass substrate,
Forming the base film on the release layer;
Forming the thin film transistor using crystalline silicon on the base film;
Forming the passivation film on the thin film transistor;
After fixing the first plastic substrate on the passivation film, the semiconductor integrated circuit is peeled from the glass substrate by removing the peeling layer,
A method for manufacturing a semiconductor integrated circuit, comprising: peeling off the semiconductor integrated circuit from the glass substrate; and fixing a second plastic substrate to the base film. A method for manufacturing a semiconductor integrated circuit having a base film made of a silicon oxide film, a thin film transistor, a passivation film having flatness, and a wiring electrically connected to the thin film transistor,
Forming a release layer on the glass substrate,
Forming the base film on the release layer;
Forming the thin film transistor using crystalline silicon on the base film;
Forming the passivation film on the thin film transistor;
Forming the wiring on the passivation film;
After fixing the first plastic substrate on the passivation film and the wiring, the semiconductor integrated circuit is peeled from the glass substrate by removing the peeling layer,
A method for manufacturing a semiconductor integrated circuit, comprising: peeling off the semiconductor integrated circuit from the glass substrate; and fixing a second plastic substrate to the base film with a fixing agent. A method for manufacturing a semiconductor integrated circuit having a base film made of a silicon oxide film, a thin film transistor, and a passivation film having flatness,
Forming a release layer on the glass substrate,
Forming the base film on the release layer;
Forming the thin film transistor using crystalline silicon on the base film;
Forming the passivation film on the thin film transistor;
Forming a resin layer on the passivation film;
After fixing the first plastic substrate on the resin layer, the semiconductor integrated circuit is peeled from the glass substrate by removing the peeling layer,
A method for manufacturing a semiconductor integrated circuit, comprising: peeling off the semiconductor integrated circuit from the glass substrate; and fixing a second plastic substrate to the base film. A method for manufacturing a semiconductor integrated circuit having a base film made of a silicon oxide film, a thin film transistor, a passivation film having flatness, and a wiring electrically connected to the thin film transistor,
Forming a release layer on the glass substrate,
Forming the base film on the release layer;
Forming the thin film transistor using crystalline silicon on the base film;
Forming the passivation film on the thin film transistor;
Forming the wiring on the passivation film;
Forming a resin layer on the passivation film and the wiring;
After fixing the first plastic substrate on the resin layer, the semiconductor integrated circuit is peeled from the glass substrate by removing the peeling layer,
A method for manufacturing a semiconductor integrated circuit, comprising: peeling off the semiconductor integrated circuit from the glass substrate; and fixing a second plastic substrate to the base film. A method for manufacturing a semiconductor integrated circuit having a base film made of a silicon oxide film, a thin film transistor, and a passivation film having flatness,
Forming a release layer on the glass substrate,
Forming the base film on the release layer;
Forming the thin film transistor using crystalline silicon on the base film;
Forming the passivation film on the thin film transistor;
After fixing the first plastic substrate on the passivation film, the semiconductor integrated circuit is peeled from the glass substrate by removing the peeling layer,
After peeling off the semiconductor integrated circuit from the glass substrate, a second plastic substrate is fixed to the base film,
A method for manufacturing a semiconductor integrated circuit, comprising fixing the second plastic substrate and then peeling the semiconductor integrated circuit from the first plastic substrate. A method for manufacturing a semiconductor integrated circuit having a base film made of a silicon oxide film, a thin film transistor, a passivation film having flatness, and a wiring electrically connected to the thin film transistor,
Forming a release layer on the glass substrate,
Forming the base film on the release layer;
Forming the thin film transistor using crystalline silicon on the base film;
Forming the passivation film on the thin film transistor;
Forming the wiring on the passivation film;
After fixing the first plastic substrate on the passivation film and the wiring, the semiconductor integrated circuit is peeled from the glass substrate by removing the peeling layer,
After peeling off the semiconductor integrated circuit from the glass substrate, a second plastic substrate is fixed to the base film,
A method for manufacturing a semiconductor integrated circuit, comprising fixing the second plastic substrate and then peeling the semiconductor integrated circuit from the first plastic substrate. A method for manufacturing a semiconductor integrated circuit having a base film made of a silicon oxide film, a thin film transistor, and a passivation film having flatness,
Forming a release layer on the glass substrate,
Forming the base film on the release layer;
Forming the thin film transistor using crystalline silicon on the base film;
Forming the passivation film on the thin film transistor;
Forming a resin layer on the passivation film;
After fixing the first plastic substrate on the resin layer, the semiconductor integrated circuit is peeled from the glass substrate by removing the peeling layer,
After peeling off the semiconductor integrated circuit from the glass substrate, a second plastic substrate is fixed to the base film,
A method for manufacturing a semiconductor integrated circuit, comprising fixing the second plastic substrate and then peeling the semiconductor integrated circuit from the first plastic substrate. A method for manufacturing a semiconductor integrated circuit having a base film made of a silicon oxide film, a thin film transistor, a passivation film having flatness, and a wiring electrically connected to the thin film transistor,
Forming a release layer on the glass substrate,
Forming the base film on the release layer;
Forming the thin film transistor using crystalline silicon on the base film;
Forming the passivation film on the thin film transistor;
Forming the wiring on the passivation film;
Forming a resin layer on the passivation film and the wiring;
After fixing the first plastic substrate on the resin layer, the semiconductor integrated circuit is peeled from the glass substrate by removing the peeling layer,
After peeling off the semiconductor integrated circuit from the glass substrate, a second plastic substrate is fixed to the base film,
A method for manufacturing a semiconductor integrated circuit, comprising fixing the second plastic substrate and then peeling the semiconductor integrated circuit from the first plastic substrate. In any one of Claims 11 thru | or 18,
The thin film transistor
Forming a crystalline silicon film on the base film;
Forming a gate insulating film on the crystalline silicon film;
Forming a gate electrode on the gate insulating film;
Forming an interlayer insulating film on the gate electrode;
Forming a contact hole in the interlayer insulating film;
A method for manufacturing a semiconductor integrated circuit, comprising forming a wiring formed on the interlayer insulating film and connected to the crystalline silicon through the contact hole. In any one of Claims 11 thru | or 19,
A method of manufacturing a semiconductor integrated circuit, wherein the crystalline silicon film is obtained by irradiating amorphous silicon with light. In any one of Claims 11 thru | or 19,
A method for manufacturing a semiconductor integrated circuit, wherein the crystalline silicon film is obtained by heating amorphous silicon. In any one of Claims 11 thru | or 19,
The method for manufacturing a semiconductor integrated circuit, wherein the crystalline silicon film is obtained by heating after adding a catalytic element to amorphous silicon. In claim 22,
A method for manufacturing a semiconductor integrated circuit, wherein the catalyst element is nickel. 24. In any one of claims 11 to 23.
The method of manufacturing a semiconductor integrated circuit, wherein the gate electrode is aluminum, tungsten, titanium, tungsten silicide, or titanium silicide. In any one of Claim 11 thru | or 24,
A method of manufacturing a semiconductor integrated circuit, wherein the interlayer insulating film is silicon oxide. In any one of Claims 11 to 25,
The method for manufacturing a semiconductor integrated circuit, wherein the glass substrate is alkali-free glass, low alkali glass, or quartz glass. In any one of Claims 11 to 26,
The method of manufacturing a semiconductor integrated circuit, wherein the second plastic substrate is polyethersulfone. In any one of claims 11 to 27,
The method for manufacturing a semiconductor integrated circuit, wherein the passivation film is a polyimide film.

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