JP2005033036A - Method for manufacturing semiconductor laser element and method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor laser element and a method for manufacturing a semiconductor device by which damage in a process for dividing a monolithic two-wavelength semiconductor laser for generating light elements of different wavelengths from a substrate can be prevented and a high yield can be obtained. <P>SOLUTION: In the method for forming a monolithic semiconductor laser element provided with a 1st semiconductor laser (120) for generating laser light of a 1st wavelength, and a 2nd semiconductor laser (140) for generating laser light of a 2nd wavelength on a semiconductor substrate (101) and dividing the semiconductor laser element by cleavage in each element, the width of the bottom of a V-shaped groove (139) separating respective semiconductor laser elements is formed narrower than the width of the bottom of a groove for electrically separating the 1st semiconductor laser and the 2nd semiconductor laser. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a semiconductor element and a semiconductor device, and more particularly to a method for manufacturing a two-wavelength semiconductor laser element having a monolithic structure composed of two semiconductor lasers having different oscillation wavelengths and a method for manufacturing a semiconductor device.

  In recent years, DVD drives for optical information recording / reproduction featuring a large storage capacity are rapidly spreading in various fields including video players. In addition, there is a strong demand for reading of CDs, CD-Rs, and CD-RWs that have been conventionally used with the same device. For this reason, an infrared semiconductor laser for 780 nm band for CD is used together with a red semiconductor laser for 650 nm band for DVD as a light source of an optical pickup used for recording / reproducing of DVD and CD. A recording / reproducing apparatus such as a DVD needs to be reduced in size and thickness as information processing equipment such as a personal computer is downsized. In order to realize this, it is essential to reduce the size and thickness of the optical pickup. In order to reduce the size and thickness of an optical pickup, it is effective to simplify the apparatus by reducing the number of optical components, and one of them is to integrate a red semiconductor laser and an infrared semiconductor laser. As a conventional example, a monolithic semiconductor laser in which a red semiconductor laser and an infrared semiconductor laser are integrated on the same semiconductor substrate is proposed in, for example, Patent Document 1 below. As a result, not only the semiconductor laser itself can be integrated into a single component, but also optical components such as collimator lenses and beam splitters can be shared by the red and infrared semiconductor lasers, which is effective in reducing the size and thickness of the device. is there. In the manufacturing process of the monolithic semiconductor laser, an element separation step for electrically separating the light emitting element having the first wavelength and the light emitting element having the second wavelength is important. And Patent Document 3 below.

  Among these, the manufacturing method in the prior art described in the following patent document 3 is shown to FIG. As shown in FIG. 5A, an n-type buffer layer 302 made of GaAs, an n-type clad layer 303 made of AlGaAs are formed on an n-type substrate 301 made of GaAs by metal organic vapor phase epitaxial growth (hereinafter referred to as MOVPE method). An active layer (multiple quantum well structure with an oscillation wavelength of 780 nm) 304, a p-type cladding layer 305 made of AlGaAs, and a p-type cap layer 306 made of GaAs are sequentially stacked. Next, as shown in FIG. 5B, a resist film (not shown) covering the formation region 308 of the first semiconductor laser light emitting element is formed, and sulfuric acid-based non-selective etching using the resist film as a mask and The first p-type cap layer 306 except the formation region 308 of the first semiconductor laser light emitting element to the n-type clad layer 303 are removed by wet etching such as hydrofluoric acid (HF) AlGaAs selective etching, A first stacked body 307 is formed by stacking the p-type cap layer 306, the p-type cladding layer 305, the active layer 304, and the n-type cladding layer 303 on the formation region 307 of the semiconductor laser light emitting element. Next, as shown in FIG. 5C, an n-type buffer layer 332 made of InGaP, an n-type clad layer 333 made of AlGaInP so as to cover the first stacked body 307 on the n-type buffer layer 302 by the MOVPE method. An active layer (multiple quantum well structure with an oscillation wavelength of 650 nm) 334, a p-type cladding layer 335 made of AlGaInP, and a p-type cap layer 336 made of GaAs are sequentially stacked. Next, as shown in FIG. 5D, a resist film (not shown) that covers the formation region 337 of the second semiconductor laser light emitting element is formed. Formation region of the second semiconductor laser light emitting element by wet etching such as sulfuric acid-based cap layer etching, phosphoric acid-based quaternary compound semiconductor, hydrochloric acid-based separation etching using the resist film as a mask The other parts except the p-type cap layer 336 except the 337 to the n-type buffer layer 332 are removed, and the n-type buffer layer 332, the n-type cladding layer 333, and the like are formed on the formation region 338 of the second semiconductor laser light emitting element. A second stacked body 337 is formed by stacking the active layer 334, the p-type cladding layer 335, and the p-type cap layer 336. As a result, the first stacked body 307 and the second stacked body 337 are separately formed. Next, as shown in FIG. 5E, an insulating film 309 is formed on the first and second stacked bodies 307 and 337 so as to cover a portion to be a current injection region, and then etching using the insulating film 309 as a mask. Thus, in order to form a stripe structure serving as a gain guide type current confinement structure, the surface is processed into a ridge shape from the surface of the p-type cap layers 306 and 336 to a depth in the middle of the p-type cladding layers 305 and 335. Next, as shown in FIG. 5F, an n-type current blocking layer 310 made of, for example, GaAs, is selectively grown on the compound semiconductor layer and etched into a ridge shape up to the middle depth of the p-type cladding layers 305 and 335. Embed. Thereafter, the insulating film 309 is removed by etching. Next, as shown in FIG. 5G, after forming a resist film (not shown) covering the n-type current blocking layer 310 formed on the upper surfaces of the first and second stacked bodies 307 and 337, the resist film is formed. Etching used as a mask leaves the n-type current blocking layer 310 only on the top surfaces of the first and second stacked bodies 307 and 337, and removes the other portions of the n-type layer 310. Thereafter, as shown in FIG. 5H, the resist film is removed. Further, the p-type electrodes 312 and 313 connected to the p-type cap layers 306 and 336 are formed of, for example, a Ti / Pt / Au laminated body, and the n-type electrode 314 connected to the n-type substrate 301 is formed of, for example, AuGe / Ni / It is formed of a laminate of Au.

  Cleaving is performed to take out the semiconductor laser element thus formed from the substrate. The cleaving is an operation of forming a plurality of semiconductor laser elements on a single substrate and then dividing them into individual semiconductor laser elements when manufacturing a semiconductor laser element. Details of the process are shown.

Hereinafter, the cleavage process will be described with reference to the drawings. 6A to 6C are process diagrams for explaining cleavage processing of the semiconductor laser element. Here, the semiconductor laser element has only one stacked body, and no groove for separating the elements is provided in the substrate surface, that is, the element separating portion is also covered with the stacked semiconductor layer. ing. First, as shown in FIG. 6A, a semiconductor laser in which a plurality of semiconductor layers 401 including an active layer are stacked on a GaAs substrate is formed. Further, a plurality of cleavage grooves 402 are provided at intervals of the semiconductor laser along the cavity length direction (X direction in the drawing) of the semiconductor laser on the surface on the side where the semiconductor layer 401 is formed with respect to the semiconductor laser. Are formed in parallel to each other at equal intervals. Next, a plurality of short scribe flaws 403 for cutting out the semiconductor laser into a rectangle whose Y direction is the longitudinal direction in the figure are formed at equal intervals on the side edges along the X direction in the figure. Subsequently, as shown in FIG. 6B, a plurality of laser bars 404 including a plurality of aligned semiconductor lasers are obtained by cleaving (primary cleavage) in the Y direction starting from each scribe flaw 403. The cleavage plane at this time becomes the cavity end face of the laser. Next, after coating the resonator end face with a dielectric film or the like, as shown in FIG. 6C, each laser bar 404 is cleaved (secondary cleaved) along the cleavage groove 402, thereby producing a plurality of semiconductors. A laser element 405 is obtained. The cleavage groove 402 is a scribe flaw (groove) that is mechanically formed by a diamond needle in a scriber or the like, for example. In this case, microcracks are generated from the cleaved grooves 402 formed mechanically toward the inside of the semiconductor layer 401, and the crystal strength is low where the microcracks are generated. Therefore, by applying a load to the cleavage groove portion 402 formed on the laser bar 404 from the back electrode 406 side, it is easy to follow the microcrack portion having a low crystal strength formed in the semiconductor layer 401 from the cleavage groove portion 402. Cleaved. Specifically, for example, the side on which the semiconductor layer 401 is formed is placed on a support, and a protective sheet is placed on the back electrode 406 side of the laser bar 404, and a roller or the like is rolled from above. It is sufficient to apply a relatively low load by sliding it down with.
Japanese Patent Laid-Open No. 11-186651 JP 2001-244572 A Japanese Patent Laid-Open No. 2001-24469 JP 2001-127369 A

  However, in the semiconductor laser device having the first semiconductor laser that emits the laser beam having the first wavelength and the second semiconductor laser that emits the laser beam having the second wavelength different from the first semiconductor laser, as shown in FIGS. In addition, a groove is formed to separate the first semiconductor laser and the second semiconductor laser at the same time as the element separating groove, and the bottom of the latter groove is above a certain level in order to electrically separate them. Are formed with an interval of. In this case, there are several problems. First, since the bottom of the element isolation trench is generally several to several tens of μm, it is very difficult in terms of processing accuracy to make a scribe scratch directly in such a narrow region. In the state where the element isolation portion is etched up to the substrate, the substrate is directly scribed, but this causes the crystal strength of the substrate to become very weak, and each element is isolated during the primary cleavage. Therefore, it is impossible to coat the reflection film on the cavity end face of the laser. All of these lead to yield loss. Further, in order to improve the cleavage accuracy, it is possible to produce a scribe groove in the separation part by etching. However, it is technically difficult to perform such countermeasures after performing the element isolation step because it not only increases the number of steps but also needs to be performed accurately on a flat surface with unevenness.

  In order to solve the above-described conventional problems, the present invention provides a method of manufacturing a semiconductor laser element and a method of manufacturing a semiconductor device for forming a dividing groove suitable for cleavage while electrically separating two elements. The purpose is to do.

In order to achieve the above object, a semiconductor laser device manufacturing method of the present invention includes a first semiconductor laser that emits laser light having a first wavelength on a semiconductor substrate, and a laser light having a second wavelength different from the first wavelength. Forming a monolithic semiconductor laser device comprising a second semiconductor laser emitting
Cleaving the semiconductor substrate to form a laser bar in which a plurality of the monolithic semiconductor laser elements are aligned; and
A method for manufacturing a semiconductor laser device, comprising the step of cleaving the laser bar to obtain the monolithic semiconductor laser device by dividing it into each device,
The laser bar is cleaved by a V-shaped groove that separates the monolithic semiconductor laser elements, and the width of the bottom of the V-shaped groove is a groove that separates the first semiconductor laser and the second semiconductor laser. It is characterized in that it is narrower than the width of the bottom part.

The method for manufacturing a semiconductor device of the present invention includes a step of stacking a semiconductor layer on a semiconductor substrate to form a first stacked body,
Leaving the first laminate in a first predetermined region and removing the first laminate formed in other regions;
Forming a second stacked body by stacking a semiconductor layer on the semiconductor substrate and the first stacked body;
The second laminated body is removed while leaving the second laminated body in a second predetermined region and removing the first laminated body formed on the semiconductor substrate and the first laminated body. Forming a groove for separating from the body on both sides of the first laminate, and processing so that the width of one bottom of the separation groove is narrower than the width of the bottom of the other separation groove;
Cleaving the semiconductor substrate to obtain a semiconductor element including the first stacked body and the second stacked body,
The one separation groove is a groove for dividing the semiconductor element including the first stacked body and the second stacked body into each element,
The other separation groove is a groove for electrically separating the first stacked body and the second stacked body.

  As described above, according to the present invention, when a device in which each internal element is groove-separated like a monolithic two-wavelength semiconductor laser element is taken out from the substrate, the electrical isolation characteristics of each element are not affected. Since a simple cleavage process can be used as it is, it is very effective for cost reduction and yield improvement, and a highly reliable device can be manufactured.

  According to the present invention, the V-shaped groove that separates the monolithic semiconductor laser elements is cleaved, and the width of the bottom of the V-shaped groove is a groove that electrically separates the first semiconductor laser and the second semiconductor laser. Narrower than bottom width. In this case, when the chip is cleaved, even if a load is applied so that pressure is concentrated on the bottom of the V-shaped groove as described above, the latter groove does not break and the yield is improved. Furthermore, since the groove has a shape in which stress concentration is likely to occur, cleavage can be performed with a relatively light load, and adverse effects on laser characteristics due to excessive stress concentration can be greatly reduced. In the above, the width of the bottom of the V-shaped groove is preferably 40 to 100% narrower than the width of the bottom of the groove for electrically separating the first semiconductor laser and the second semiconductor laser. Furthermore, the width of the bottom of the V-shaped groove is preferably in the range of 0 to 1 μm.

  It is preferable that the bottom of the groove for dividing the semiconductor element including the first stacked body and the second stacked body for each element reaches the surface of the semiconductor substrate.

  The first stacked body constitutes part or all of a first semiconductor laser that emits laser light having a first wavelength, and the second stacked body has laser light having a second wavelength different from the first wavelength. It is preferable to form part or all of the second semiconductor laser emitting

  It is preferable that at least one of the side surfaces of the V-shaped groove is substantially parallel to the (111) plane of the semiconductor substrate.

  Embodiments of the present invention will be described below with reference to the drawings. As shown in FIG. 1A, an oscillation wavelength of 780 nm made of an n-type buffer layer 102, an n-type cladding layer 103, and a GaAs-based material is formed on an n-type GaAs substrate 101 by an epitaxial growth method such as MOVPE (metal organic vapor phase epitaxy). The first stacked body 107 that becomes a part of the first semiconductor laser 120 is formed by sequentially stacking the active layer 104, the p-type cladding layer 105, and the p-type cap layer 106 of the multiple quantum well structure.

  The n-type cladding layer 103 is formed by, for example, an n-type AlGaAs layer or an n-type AlGaInP layer, the p-type cladding layer 105, for example, is formed by a p-type AlGaAs layer or a p-type AlGaInP layer, and the p-type cap layer is p A p-type AlGaAs layer or a p-type GaAs layer. A guide layer may be provided between the active layer 104 and the clad layers 103 and 105.

  Next, as shown in FIG. 1B, the region 108 where the first semiconductor laser 120 is to be formed is covered with a resist film (not shown) by using a photolithography technique, and the resist film is used as a mask. Etching is performed up to the n-type cladding layer 103. When the n-type cladding layer and the p-type cladding layer are formed of an AlGaAs layer, the etching can be performed by using a sulfuric acid-based etchant and a hydrofluoric acid-based etchant, and when formed by an AlGaInP layer, Etching is possible by using a sulfuric acid-based etchant and a hydrochloric acid-based etchant. As a result, the first stacked body 107 in which the n-type cladding layer 103, the active layer 104, the p-type cladding layer 105, and the p-type cap layer 106 are sequentially stacked on the region 108 where the first semiconductor laser 120 is to be formed. Is left, and the (111) plane is exposed as the side surface of the stacked body 107. This is because the above-described wet etching is an anisotropic etching whose etching rate varies depending on the surface orientation of the substrate, and the (111) plane having the slowest etching rate is preferentially exposed.

  Next, as shown in FIG. 1C, an oscillation wavelength made of an n-type buffer layer (not shown), an n-type cladding layer 133, and a GaInP-based material is formed on the n-type buffer layer 102 by an epitaxial growth method such as MOVPE. A second stacked body 137 is formed by sequentially stacking an active layer 134 having a multiple quantum well structure of 650 nm, a p-type cladding layer 135, and a p-type cap layer 136. The n-type cladding layer 133 is formed of, for example, an n-type AlGaInP layer, the p-type cladding layer 135 is formed of, for example, a p-type AlGaInP layer, and the p-type cap layer 136 is formed of, for example, a p-type GaInP layer.

  Next, as shown in FIG. 2A, the second stacked body on 138 in the region where the second semiconductor laser 240 is to be formed is covered with a resist film (not shown) by using a photolithography technique. After that, the second stacked body 137 on the first stacked body 107 and other than the region 138 is etched until the outermost surface of the first stacked body 107 is exposed. In this step, a groove for separating the second stacked body 137 and the first stacked body 107 is formed by etching on both sides of the first stacked body 107, and the width of one bottom portion of the separation groove is the other. To be narrower than the width of the bottom of the groove. The narrower groove 139 at the bottom is for cleaving the element chip including the first stacked body 107 and the second stacked body 137, and has a V-shape. The bottom of the trench 139 reaches the n-type buffer layer 102 or the n-type GaAs substrate (101). The above etching is performed using a hydrochloric acid-based etchant and a sulfuric acid-based etchant, and is anisotropic etching.

  By using the photolithography technique as described above, the width of the groove and the position in the substrate can be accurately determined. Further, if the (111) plane is exposed on the side surface of the groove by using anisotropic wet etching, it can be formed into a V shape terminating in the substrate, so that the depth of the groove corresponds to the opening width. It will be. That is, the depth can be controlled with high accuracy. For example, when the thickness of the first stacked body 107 and the second stacked body 137 is 3 μm, the second stacked body 137 is separated from the side surface portion of the p-type cap layer 106 of the stacked body 107 by about 8 μm. By forming a mask on the top and performing wet etching with the above-described chemical solution, the bottom of the groove fits in a width of 0 to 1 μm or less.

  Next, as shown in FIG. 2B, an insulating film 109 is formed on the first and second stacked bodies 107 and 137 so as to cover a portion to be a current injection region, and etching using the insulating film 109 as a mask is performed. In order to form a stripe structure that becomes a current confinement structure, for example, a ridge having an inclination having a (111) plane by wet etching a part of the p-type cladding layers 105 and 135 from the surface of the p-type cap layers 106 and 136. Process into stripes.

  Next, as shown in FIG. 2C, the n-type current block layer is formed on the exposed portions of the first and second stacked bodies 107 and 137 by selective growth using the insulating film 109 as a mask by MOCVD or the like. 110 is selectively grown to form a current confinement layer. Thereafter, the insulating film 109 is removed by etching (not shown), and a p-type contact layer 111 is formed.

  Next, as shown in FIG. 3A, the n-type current blocking layer 110 and the p-type contact layer 111 formed on the first and second stacked bodies are covered with a resist by a lithography technique, and the n-type formed on the separation groove. The first current blocking layer 110 and the p-type contact layer 111 are etched to electrically isolate the first semiconductor laser element 120 including the first stacked body and the second semiconductor laser 140 including the second stacked body. To do. As described above, the laser light wavelength emitted from the first semiconductor laser 120 is light in the 780 nm band, and the laser light wavelength emitted from the second semiconductor laser 140 is light in the 650 nm band. Reference numeral 1 denotes a semiconductor light emitting device.

  Thereafter, as shown in FIG. 3B, the p-type electrodes 112 and 113 connected to the p-type contact layer 111 and the n-type electrode 114 connected to the n-type substrate are connected. In the electrode, the p-type electrodes 112 and 113 are formed of a laminated body such as Cr / Pt / Au, and the n-type electrode 114 is formed of a laminated body such as AuGe / Ni / Cr / Pt / Au.

  Next, a method for cleaving the element chip will be described. First, as shown in FIG. 4A, a monolithic two-wavelength semiconductor laser including the first semiconductor laser 120 and the second semiconductor laser 140 shown in FIG. 3B is formed on the GaAs substrate 101. Further, with respect to the monolithic two-wavelength semiconductor laser, the monolithic two-wavelength semiconductor laser is formed on the surface on the side where the semiconductor layer 201 is formed along the resonator length direction (X direction in the drawing) of the monolithic two-wavelength semiconductor laser. A plurality of cleavage groove portions 202 are formed in parallel to each other at equal intervals for each interval. The cleavage groove is the V-shaped element isolation groove 139 shown in FIG. Next, a plurality of short scribe flaws 203 for cutting the monolithic two-wavelength semiconductor laser into a rectangle whose Y direction is the longitudinal direction in the figure are spaced at equal intervals along the side edges along the cavity length direction of the monolithic two-wavelength semiconductor laser. Open and formed.

  Next, as shown in FIG. 4B, a plurality of laser bars 204 including a plurality of aligned semiconductor lasers are obtained by cleaving (primary cleavage) in the Y direction starting from each scribe flaw 203. The cleavage plane at this time becomes the cavity end face of the laser.

  Next, after coating the resonator end face with a dielectric film or the like, as shown in FIG. 4C, a load is applied to the laser bar 204 from the back electrode 206 (corresponding to the n-type electrode 114 in FIG. 3B), and each laser bar is applied. A plurality of monolithic two-wavelength semiconductor laser elements 205 are obtained by cleaving (secondary cleavage) along the cleaving groove 202.

  As described above with reference to FIG. 2A, the width of the groove bottom portion for cleaving and separating the chip is made narrower than the width of the groove bottom portion for electrically separating the elements in the chip. Even if a load is applied so that the pressure is concentrated on the bottom of the substrate, the latter groove does not break, and there is no fear of a decrease in yield in the secondary cleavage process. Furthermore, since the groove has a shape in which stress concentration is likely to occur, cleavage can be performed with a relatively light load, and adverse effects on laser characteristics due to excessive stress concentration can be greatly reduced. In particular, if the width of the bottom is 0 μm or more and 1 μm or less, cleavage is easy and the above effect becomes more remarkable.

  Further, according to the present embodiment, the position, width, and depth of both the element isolation groove and the chip cleaving isolation groove can be processed with high controllability and high accuracy using a known technique as described above. Since these grooves can be formed at the same time, the number of processes does not increase, and an increase in cost can be prevented. The structure of the semiconductor laser is not particularly limited to the structure shown in the present embodiment, and for example, the current blocking layer may be two layers. Further, in the present embodiment, the monolithic two-wavelength semiconductor laser element has been described. However, for example, an LED (Light Emitting Device) that emits light of different wavelengths may be used, or a semiconductor light-receiving element that receives light of different wavelengths or Even if the semiconductor light emitting element and the semiconductor light receiving element are formed on the same substrate, the same effect as the above embodiment can be obtained. Further, it may be used for manufacturing a semiconductor device in which a plurality of different types of HBTs (Hetero Bipolar Transistors) are formed. In that case, the element may be divided by directly cleaving at the V-groove portion without performing the primary cleavage as described above.

FIGS. 8A to 8C are explanatory diagrams of manufacturing steps of the monolithic two-wavelength semiconductor laser device in the embodiment of the present invention. FIGS. 8A to 8C are explanatory diagrams of manufacturing steps of the monolithic two-wavelength semiconductor laser device in the embodiment of the present invention. FIGS. 8A and 8B are explanatory diagrams of manufacturing steps of the monolithic two-wavelength semiconductor laser device in the embodiment of the present invention. FIGS. FIGS. 4A to 4C are explanatory views of a cleavage process of a monolithic two-wavelength semiconductor laser device in an embodiment of the present invention. A-H is a process diagram for explaining a manufacturing process of a monolithic two-wavelength semiconductor laser device in the prior art. FIGS. 8A to 8C are explanatory views of a cleavage process of a monolithic two-wavelength semiconductor laser element in the prior art.

Explanation of symbols

101, 301 n-type GaAs substrate 102, 302 n-type buffer layer 103, 303 n-type cladding layer 104, 304 Multiple quantum well structure active layer (oscillation wavelength 780 nm)
105,305 p-type cladding layer 106,306 p-type cap layer 107,307 first stacked body 108,308 first semiconductor laser formation region 109,309 insulating film 110,310 n-type current blocking layer 111,311 p Type contact layers 112, 113, 312, 313 p-type electrodes 114, 314 n-type electrodes 120, 320 first semiconductor lasers 133, 333 n-type cladding layers 134, 334 multiple quantum well structure active layer (oscillation wavelength 650 nm)
135, 335 p-type cladding layers 136, 336 p-type cap layers 137, 337 second stacked bodies 138, 338 second semiconductor laser formation region 139 V-shaped element isolation grooves 140, 340 second semiconductor laser 201, 401 Semiconductor layers 202, 402 Cleaving grooves 203, 403 Scribe scratches 204, 404 Laser bar 205 Monolithic two-wavelength semiconductor laser element 206, 406 Back electrode 332 n-type buffer layer 405 Semiconductor laser element

Claims (10)

A monolithic semiconductor laser element comprising a first semiconductor laser that emits laser light having a first wavelength and a second semiconductor laser that emits laser light having a second wavelength different from the first wavelength is formed on a semiconductor substrate. And a process of
Cleaving the semiconductor substrate to form a laser bar in which a plurality of the monolithic semiconductor laser elements are aligned; and
A method for manufacturing a semiconductor laser device, comprising the step of cleaving the laser bar to obtain the monolithic semiconductor laser device by dividing it into each device,
The laser bar is cleaved by a V-shaped groove that separates the monolithic semiconductor laser elements, and the width of the bottom of the V-shaped groove is a groove that separates the first semiconductor laser and the second semiconductor laser. A method of manufacturing a semiconductor laser device, wherein the width is narrower than the width of the bottom of the semiconductor laser device. 2. The method of manufacturing a semiconductor laser device according to claim 1, wherein at least one of side surfaces of the V-shaped groove is substantially parallel to a (111) plane of the semiconductor substrate. 3. The method of manufacturing a semiconductor laser device according to claim 1, wherein a bottom of the V-shaped groove reaches the surface of the semiconductor substrate. The method for manufacturing a semiconductor laser device according to claim 1, wherein a width of a bottom portion of the V-shaped groove is not less than 0 μm and not more than 1 μm. Stacking a semiconductor layer on a semiconductor substrate to form a first stacked body;
Leaving the first laminate in a first predetermined region and removing the first laminate formed in other regions;
Forming a second stacked body by stacking a semiconductor layer on the semiconductor substrate and the first stacked body;
The second laminated body is removed while leaving the second laminated body in a second predetermined region and removing the first laminated body formed on the semiconductor substrate and the first laminated body. Forming a groove for separating from the body on both sides of the first laminate, and processing so that the width of one bottom of the separation groove is narrower than the width of the bottom of the other separation groove;
Cleaving the semiconductor substrate to obtain a semiconductor element including the first stacked body and the second stacked body,
The one separation groove is a groove for dividing the semiconductor element including the first stacked body and the second stacked body into each element,
The method of manufacturing a semiconductor device, wherein the other separation groove is a groove for electrically separating the first stacked body and the second stacked body. The method for manufacturing a semiconductor device according to claim 5, wherein a bottom of a groove for dividing the semiconductor element including the first stacked body and the second stacked body for each element reaches the surface of the semiconductor substrate. The first stacked body constitutes part or all of a first semiconductor laser that emits laser light having a first wavelength,
7. The method of manufacturing a semiconductor device according to claim 5, wherein the second stacked body constitutes a part or all of a second semiconductor laser that emits laser light having a second wavelength different from the first wavelength. 8. The method for manufacturing a semiconductor device according to claim 5, wherein at least one of the separation grooves having a narrow bottom is a V-shaped groove. The method of manufacturing a semiconductor device according to claim 8, wherein at least one of side surfaces of the V-shaped groove is substantially parallel to a (111) plane of the semiconductor substrate. 10. The method of manufacturing a semiconductor device according to claim 8, wherein a width of a bottom portion of the V-shaped groove is not less than 0 μm and not more than 1 μm.

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