JP2005032975A - Semiconductor device and method of measuring same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is smaller in size and lower in price than that requesting a pad for grounding to the conventional pad for radio frequency, and also to provide a method of measuring the same. <P>SOLUTION: The semiconductor device comprises a semiconductor substrate 1 on which a plurality of chip regions 3 including a semiconductor chip 2 are allocated, a scribe region 4 provided between chip regions 3, and a conductive material 5 provided in this scribe region 4. This semiconductor chip 2 includes, in the same side as the forming surface of conductor material 5 provided on the semiconductor substrate 1, at least a first pad 2a for the grounding and a second pad 2b for radio frequency. Since the first pad 2a is electrically connected to the conductor material 5, the conventional second pad is no longer required. Accordingly, a small size and low price semiconductor device can be obtained. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device suitable for use in various electronic devices and a measuring method thereof.
[0002]
[Prior art]
FIG. 5 is a plan view of a conventional semiconductor device, FIG. 6 is an enlarged plan view of a main part of the conventional semiconductor device, and FIG. 7 is a diagram of the conventional semiconductor device. It is explanatory drawing for demonstrating the measuring method.
[0003]
Next, the configuration of a conventional semiconductor device will be described with reference to FIGS. 5 and 6. A flat semiconductor substrate 51 made of a wafer includes a plurality of semiconductor chips 52 and the semiconductor chips 52, and is in a matrix form. A plurality of chip regions 53 disposed in the chip region, scribe regions 54 provided between the chip regions 53 for forming the individual semiconductor chips 52, and conductors formed in a lattice shape in the scribe regions 54 55. (For example, see Patent Document 1)
[0004]
In the conventional semiconductor device, a conductor 55 is provided in the scribe region 54, and the semiconductor 55 is grounded to prevent electrostatic breakdown of the semiconductor chip 52 during manufacture.
[0005]
Moreover, each semiconductor chip 52 of the conventional semiconductor device has a plurality of pad portions P formed on the same side as the surface of the conductor 55 provided on the semiconductor substrate 51 as shown in FIG.
[0006]
The plurality of pad portions P include a plurality of grounding first pad portions Pa connected to a circuit board (not shown) and a plurality of pad parts P which are not required to be connected to the circuit board (not shown). The second pad portion Pb for grounding, the third pad portion Pc for high frequency connected to the circuit board (not shown) and arranged adjacent to the second pad portion Pb, and the circuit board (FIG. A plurality of fourth pad portions Pd other than that connected to (not shown).
[0007]
In the conventional semiconductor device having such a configuration, the semiconductor substrate 51 is cut along the scribe region 54 to produce individual semiconductor chips 52 separated from each other. It is mounted on the circuit board of equipment.
[0008]
Next, a conventional method for measuring a semiconductor device will be described with reference to FIG. 7. First, the semiconductor substrate 51 is placed on a table (support) (not shown) with the pad portion P and the conductor 55 facing upward. Supported on top.
[0009]
Next, the probe 56 connected to the measuring device (not shown) is provided with two pin-like contact portions 56a and 56b, and the probe 56 is moved in the direction of arrow A, and the probe 56 is moved to the semiconductor. Moving on the substrate 51, one contact portion 56a is brought into contact with the third pad portion Pc, and the other contact portion 56b is brought into contact with the second pad portion Pb so as to measure high-frequency electrical characteristics. It has become.
[0010]
Further, when the contact portions 56a and 56b of the probe 56 are brought into contact between the adjacent fourth pad portions Pd and measured in this state, electrical characteristics such as a low frequency can be measured.
[0011]
That is, in the conventional semiconductor device and the measuring method thereof, in addition to the first pad portion Pa for grounding, the second pad portion Pb for grounding adjacent to the third pad portion Pc for high frequency is necessary. Therefore, not only the semiconductor device becomes large, but also an extra second pad portion Pb for grounding has to be formed, which increases the manufacturing cost of the semiconductor device.
[0012]
[Patent Document 1]
JP-A-5-109641 [0013]
[Problems to be solved by the invention]
In the conventional semiconductor device and the measuring method thereof, in addition to the first pad portion Pa for grounding, the second pad portion Pb for grounding adjacent to the third pad portion Pc for high frequency is required. Accordingly, there is a problem that not only the semiconductor device becomes large, but also the extra second pad portion Pb for grounding has to be formed, and the manufacturing cost of the semiconductor device becomes high.
[0014]
Therefore, an object of the present invention is to provide a small and inexpensive semiconductor device and a measuring method thereof.
[0015]
[Means for Solving the Problems]
As a first means for solving the above problems, a semiconductor substrate having a plurality of chip regions each having a semiconductor chip, a scribe region provided between the chip regions, and a scribe region. The semiconductor chip has at least a first pad portion for grounding and a second pad portion for high frequency on the same side as the surface of the conductor provided on the semiconductor substrate. And the first pad portion is electrically connected to the conductor.
[0016]
As a second solution, the chip regions are arranged in a matrix.
As a third solution, the first pad portion is provided at a position away from the adjacent portion of the second pad portion.
[0017]
As a fourth solution, a semiconductor device and a probe having at least two contact portions are provided, and one of the contact portions is in contact with the conductor in a state where the conductor is grounded. The measurement method is such that the other of the contact portions is brought into contact with the second pad portion.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a plan view of a semiconductor device of the present invention, FIG. 2 is an enlarged plan view of a main part of the semiconductor device of the present invention, and FIG. 3 is a diagram of the present invention. FIG. 4 shows a first embodiment of the semiconductor device measurement method of the present invention, and is an explanatory diagram for explaining the measurement method. FIG. 4 shows a second embodiment of the semiconductor device measurement method of the present invention, for explaining the measurement method. It is explanatory drawing.
[0019]
Next, the configuration of the semiconductor device of the present invention will be described with reference to FIGS. 1 and 2. A flat semiconductor substrate 1 made of a wafer includes a plurality of semiconductor chips 2 and the semiconductor chips 2, and a matrix. A plurality of chip regions 3 arranged in a shape, a scribe region 4 provided between the chip regions 3 for forming individual semiconductor chips 2, and a conductive material formed in a lattice shape in the scribe region 4 It has a body 5.
[0020]
The semiconductor chip 2 is connected to a plurality of grounding first pad portions 2a connected to a circuit board (not shown) and to the circuit board (not shown). It has a second pad portion 2b for high frequency disposed at a distant position (a position not adjacent to each other) and a plurality of third pad portions 2c other than that connected to a circuit board (not shown).
[0021]
Further, as shown in FIG. 2, the first, second, and third pad portions 2a, 2b, and 2c are formed on the same side as the surface on which the conductor 5 provided on the semiconductor substrate 1 is formed. The pad portion 2 a is electrically connected to the conductor 5 and can be grounded via the conductor 5.
[0022]
In the semiconductor device of the present invention, the conductor 5 is provided in the scribe region 4 and the semiconductor 5 is grounded to prevent electrostatic breakdown of the semiconductor chip 2 during manufacturing.
[0023]
In the semiconductor device of the present invention having such a configuration, the semiconductor substrate 1 is cut along the scribe region 4 to produce individual semiconductor chips 2 separated from each other. It is mounted on the circuit board of electronic equipment.
[0024]
Next, a first embodiment of the semiconductor device measurement method of the present invention will be described with reference to FIG. 3. First, the first, second, and third pad portions 2a, 2b, and 2c, and the conductor 5 are moved upward. In this state, the semiconductor substrate 1 is supported on a table (support) (not shown) and the conductor 5 is grounded.
[0025]
Next, the probe 6 connected to the measuring device (not shown) is provided with two pin-like contact portions 6a and 6b having different lengths and arranged in the front-rear direction with respect to the arrow A direction. The probe 6 is moved in the direction of arrow A, and the probe 6 is moved onto the semiconductor substrate 1 to bring one long contact portion 6a into contact with the second pad portion 2b and the other short contact portion 6b. Contact the conductor 5.
[0026]
Then, the contact portion 6b is electrically connected to the first pad portion 2a for grounding via the conductor 5, and the contact portion 6b is grounded via the conductor 5 in the grounded state. It is designed to measure the electrical characteristics.
[0027]
Further, when the contact parts 6a and 6b of the probe 6 are brought into contact between the adjacent third pad parts 2c and measured in this state, electrical characteristics such as low frequency can be measured.
[0028]
That is, in the semiconductor device and the measuring method thereof according to the present invention, it is only necessary to provide the grounding conductor 5, and the grounding second pad adjacent to the third pad portion Pc for high frequency is provided as in the prior art. The semiconductor device can be reduced in size as compared with the one requiring the pad portion Pb, and the semiconductor device can be manufactured at low cost.
[0029]
Further, according to the present invention, the first pad portion 2a for grounding can be easily connected to the conductor 5 at any position in the pad portion arrangement, and easily measure high-frequency electrical characteristics. Can do.
[0030]
FIG. 4 shows a second embodiment of the method for measuring a semiconductor device according to the present invention. This second embodiment differs from the first embodiment in the configuration of the contact portions 6a and 6b, but the other configurations. Is the same as that of the first embodiment, and the same reference numerals are given to the same parts, and the description thereof is omitted here.
[0031]
That is, in the probe 6 in the second embodiment, the contact portions 6a and 6b are formed with the same length, and the contact portion 6a disposed at the front portion with respect to the direction of the arrow A contacts the second pad portion 2b. The contact portion 6b located at the rear is in contact with the conductor 5.
[0032]
In the above embodiment, the semiconductor chip 2 and the chip region 3 are described as being arranged in a matrix. However, the semiconductor chip 2 and the chip region 3 may be arranged in a shape other than the matrix. Of course it is good.
[0033]
【The invention's effect】
A semiconductor device according to the present invention includes a semiconductor substrate on which a plurality of chip regions each having a semiconductor chip are disposed, a scribe region provided between the chip regions, and a conductor provided in the scribe region. The chip has at least a first pad portion for grounding and a second pad portion for high frequency on the same side as a conductor forming surface provided on a semiconductor substrate, and the first pad portion is a conductor. Therefore, the conventional second pad portion is unnecessary, and thus a small and inexpensive semiconductor device can be provided.
[0034]
Further, since the chip regions are arranged in a matrix, a large number of semiconductor chips can be formed at the same time, and a product with good productivity can be obtained.
[0035]
In addition, since the first pad portion is provided at a position away from the adjacent portion of the second pad portion, the first pad portion for grounding can be easily formed into a conductor at any position in the pad portion array. A semiconductor device that can be connected and can easily measure high-frequency electrical characteristics can be provided.
[0036]
In addition, a semiconductor device and a probe having at least two contact portions are provided, and in a state where the conductor is grounded, one of the contact portions is in contact with the conductor, and the other of the contact portions is a second pad. Since the first pad portion for grounding can be easily connected to the conductor at any position in the pad portion arrangement, the high-frequency electrical characteristics can be easily measured. It is possible to provide a measurement method capable of
[Brief description of the drawings]
FIG. 1 is a plan view of a semiconductor device of the present invention.
FIG. 2 is an enlarged plan view of a main part according to the semiconductor device of the present invention.
FIG. 3 is an explanatory view for explaining the measurement method according to the first embodiment of the measurement method of the semiconductor device of the present invention.
FIG. 4 is an explanatory diagram for explaining a measuring method according to a second embodiment of the measuring method of the semiconductor device of the present invention.
FIG. 5 is a plan view of a conventional semiconductor device.
FIG. 6 is an enlarged plan view of a main part of a conventional semiconductor device.
FIG. 7 is an explanatory diagram for explaining a conventional method for measuring a semiconductor device.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 2 Semiconductor chip 2a 1st pad part 2b 2nd pad part 2c 3rd pad part 3 Chip area 4 Scribe area 5 Conductor 6 Probe 6a Contact part 6b Contact part

Claims (4)

A semiconductor substrate including a plurality of chip regions each having a semiconductor chip, a scribe region provided between the chip regions, and a conductor provided in the scribe region, wherein the semiconductor chip includes the semiconductor On the same side as the conductor forming surface provided on the substrate, at least a first pad portion for grounding and a second pad portion for high frequency are provided, and the first pad portion serves as the conductor. A semiconductor device which is electrically connected. 2. The semiconductor device according to claim 1, wherein the chip regions are arranged in a matrix. 3. The semiconductor device according to claim 1, wherein the first pad portion is provided at a position away from an adjacent portion of the second pad portion. A semiconductor device according to any one of claims 1 to 3 and a probe having at least two contact portions, wherein one of the contact portions is in contact with the conductor while the conductor is grounded. And a method of measuring a semiconductor device, wherein the other of the contact portions is brought into contact with the second pad portion.

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