JP2005019809A - Semiconductor device and its manufacturing method, circuit board and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device and its manufacturing method, a circuit board and an electronic apparatus. <P>SOLUTION: The semiconductor device has a semiconductor substrate 10 on which an integrated circuit 12 comprising an electrode 14, a member 16 formed integrally on the surface where the electrode 14 is formed in the region on the outside of the electrode 14 to surround all electrodes 14, and a passivation film 18 is formed. The semiconductor device comprises a first resin part 20 formed in the center on the surface of the semiconductor substrate 10 where the electrode 14 is formed while avoiding the electrode 14, a second resin part 25 formed integrally to surround all electrodes 14 on the surface of the semiconductor substrate 10 where the electrode 14 is formed while avoiding a region overlapping the surrounding member 16 in plan view, wiring 30 connected electrically with the electrode 14, and a resin layer 40 formed from above the first resin part 20 and the wiring 30 to cover the second resin part 25. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device, a manufacturing method thereof, a circuit board, and an electronic device.
[0002]
[Prior art]
[0003]
[Patent Document 1]
International Publication No. 00/55898 Pamphlet [0004]
BACKGROUND OF THE INVENTION
The spread rate of CSP (chip scale / size package) is increasing as a package of a semiconductor device. In addition, a technique for manufacturing a package at a wafer level (wafer level package) has been developed. A package manufactured by this method (for example, wafer level CSP) has a structure different from that of the conventional package because the external dimension is the size of the semiconductor chip, but the reliability is equal to or higher than that of the conventional package. Is required.
[0005]
An object of the present invention is to provide a highly reliable semiconductor device, a manufacturing method thereof, a circuit board, and an electronic apparatus.
[0006]
[Means for Solving the Problems]
(1) A semiconductor device according to the present invention is integrally formed so as to surround all the electrodes in a region outside the electrodes on the surface where the electrodes are formed, and the electrodes electrically connected to the inside. A semiconductor substrate on which an integrated circuit is formed, and a passivation film that covers the electrodes and the surrounding member so that at least a part of each of the electrodes is exposed, and
A first resin portion formed avoiding the electrode at a central portion of the surface of the semiconductor substrate on which the electrode is formed;
A second resin portion integrally formed so as to surround all of the electrodes, which is disposed so as to avoid a region overlapping with the surrounding member in a plane on the surface of the semiconductor substrate on which the electrodes are formed;
A wiring electrically connected to the electrode and having a land on the first resin portion;
And a resin layer formed so as to cover the second resin portion from above the first resin portion and the wiring. According to the present invention, the semiconductor device has the second resin portion. The resin layer is formed so as to cover the second resin portion. According to this, the force generated when the resin layer contracts is absorbed by the second resin portion. Therefore, it is possible to provide a highly reliable semiconductor device that is not easily affected by the shrinkage of the resin layer.
(2) In this semiconductor device,
The second resin portion may be formed avoiding the electrode. According to this, a semiconductor device with high electrical reliability can be provided.
(3) In this semiconductor device,
The first resin portion and the second resin portion may have the same height.
(4) In this semiconductor device,
The first resin portion and the second resin portion may be formed of the same material.
(5) The above-described semiconductor device is mounted on the circuit board according to the present invention.
(6) An electronic apparatus according to the present invention includes the semiconductor device.
(7) A method of manufacturing a semiconductor device according to the present invention is such that an electrode electrically connected to the inside is integrally formed so as to surround all the electrodes in a region outside the electrodes on the surface on which the electrodes are formed. Providing a semiconductor substrate on which an integrated circuit is formed, having an enclosing member formed in a conductive manner and a passivation film covering the electrode and the enclosing member so as to expose at least a part of each of the electrodes;
Forming a first resin portion in the center of the surface of the semiconductor substrate on which the electrode is formed, avoiding the electrode;
Avoiding a region overlapping with the surrounding member in a plane on the surface of the semiconductor substrate on which the electrodes are formed, and integrally forming the second resin portion so as to surround all the electrodes;
Electrically connecting to the electrode and forming a wiring having a land on the first resin portion; and
Forming a resin layer so as to cover the second resin portion from above the first resin portion and the wiring; According to the present invention, the second resin portion is formed in the semiconductor device. The resin layer is formed so as to cover the second resin portion. According to this, it is possible to manufacture a highly reliable semiconductor device in which the force generated by the shrinkage of the resin layer can be absorbed by the second resin portion.
(8) In this method of manufacturing a semiconductor device,
The second resin portion may be formed avoiding the electrode. According to this, a semiconductor device with high electrical reliability can be manufactured.
(9) In this method of manufacturing a semiconductor device,
The first resin portion and the second resin portion may be formed collectively. According to this, the manufacturing efficiency of the semiconductor device can be increased.
(10) In this method of manufacturing a semiconductor device,
The first resin portion and the second resin portion may be formed at the same height.
(11) In this method of manufacturing a semiconductor device,
The first resin part and the second resin part may be formed of the same material.
[0007]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments to which the present invention is applied will be described below with reference to the drawings. However, the present invention is not limited to the following embodiments. 1 and 2 are diagrams for explaining a semiconductor device according to an embodiment to which the present invention is applied. Here, FIG. 1 is a partially enlarged view of a cross section of a semiconductor device 1 according to an embodiment to which the present invention is applied. FIG. 2 is a plan view of the semiconductor device from which the wiring 30, the resin layer 40, and the external terminal 50 are removed for explanation.
[0008]
The semiconductor device according to the present embodiment has a semiconductor substrate 10. The material of the semiconductor substrate 10 is not particularly limited, but may be silicon, for example. The semiconductor substrate 10 may be a semiconductor chip (see FIG. 2). The planar shape of the semiconductor chip is generally rectangular, but is not limited thereto. However, the semiconductor substrate may be a semiconductor wafer.
[0009]
As shown in FIG. 1, one or a plurality of integrated circuits 12 (one for a semiconductor chip and a plurality for a semiconductor wafer) are formed on a semiconductor substrate 10. The integrated circuit 12 may be formed on one surface side of the semiconductor substrate 10.
[0010]
The semiconductor substrate 10 has an electrode 14. The electrode 14 may be electrically connected to the inside of the semiconductor substrate 10. The electrode 14 may be electrically connected to the integrated circuit 12. Alternatively, an electrode that is not electrically connected to the integrated circuit 12 may be used as the electrode 14. The electrodes 14 may be arranged along two parallel sides of the semiconductor substrate 10 (see FIG. 3), or may be arranged along four sides. The electrode 14 may be disposed near the end of the semiconductor substrate 10 or may be disposed near the center. The semiconductor substrate 10 may have a plurality of electrodes 14 for one integrated circuit 12. Although the material of the electrode 14 is not specifically limited, For example, Al may be sufficient.
[0011]
The semiconductor substrate 10 has a surrounding member 16. Here, the surrounding member 16 plays a role of preventing moisture that enters between the semiconductor substrate 10 and a passivation film 18 described later from reaching the element region of the semiconductor substrate 10. The surrounding member 16 can improve the reliability of the semiconductor device. The surrounding member 16 is formed in the area | region outside the electrode 14 of the surface in which the electrode 14 of the semiconductor substrate 10 was formed (refer FIG.1 and FIG.2). The surrounding member 16 is formed so as to surround all the electrodes 14. Specifically, the surrounding member 16 is formed so as to surround all of the group of electrodes 14 formed corresponding to one integrated circuit 12 (see FIG. 2). When a semiconductor wafer having a plurality of integrated circuits is prepared as a semiconductor substrate, the semiconductor substrate has a plurality of surrounding members 16 corresponding to the integrated circuits. The surrounding member 16 is generally formed integrally. The material of the surrounding member 16 is not specifically limited, For example, Al may be sufficient. The surrounding member 16 may be formed simultaneously with the step of forming the electrode 14, and may be formed of the same material as the electrode 14 at this time.
[0012]
The semiconductor substrate 10 has a passivation film 18. The passivation film 18 is an insulating protective film for protecting the surface of the semiconductor substrate 10 (the surface on which the electrode 14 is formed). The passivation film 18 is formed on the surface of the semiconductor substrate 10 (the surface on which the electrode 14 is formed). The passivation film 18 covers the electrode 14 and the surrounding member 16 so that at least a part of each electrode 14 is exposed. The passivation film 18 may be formed of, for example, SiN, SiO ₂ , polyimide resin, or the like.
[0013]
The semiconductor device according to the present embodiment has a first resin portion 20. The first resin portion 20 is formed at the center of the surface on which the electrode 14 of the semiconductor substrate 10 is formed. The first resin portion 20 is formed avoiding the electrode 14. As shown in FIG. 1, the first resin portion 20 may be formed on the passivation film 18. Although the material of the 1st resin part 20 is not specifically limited, For example, a polyimide resin, a silicone modified polyimide resin, an epoxy resin, a silicone modified epoxy resin, benzocyclobutene (BCB; benzocyclobutene), polybenzoxazole (PBO), etc. This resin may be used.
[0014]
The semiconductor device according to the present embodiment has a second resin portion 25. The second resin portion 25 is arranged on the surface of the semiconductor substrate 10 on which the electrode 14 is formed so as to avoid a region overlapping the surrounding member 16 in a planar manner. As shown in FIG. 2, the second resin portion 25 is integrally formed so as to surround all the electrodes 14. Specifically, the second resin portion 25 is formed so as to surround all of the group of electrodes 14 formed corresponding to one integrated circuit 12. When a semiconductor wafer having a plurality of integrated circuits is prepared as the semiconductor substrate, the semiconductor substrate has a plurality of second resin portions 25 corresponding to the integrated circuits. As shown in FIGS. 1 and 2, the second resin portion 25 may be formed inside the surrounding member 16. In the present embodiment, the semiconductor device has a resin layer 40 formed so as to cover the second resin portion 25 as described later. Since the resin layer 40 is formed so as to cover the second resin portion 25, when the second resin portion 25 is formed inside the surrounding member 16, the formation region of the resin layer 40 may be reduced. it can. That is, the resin layer 40 can be formed away from the end of the semiconductor substrate 10. Thereby, the shrinkage stress of the resin part 40 can be prevented from being applied to the end surface of the semiconductor substrate 10, and a highly reliable semiconductor device can be provided. However, separately from this, the 2nd resin part 25 may be formed in the outer side of the surrounding member 16 (not shown). Further, the second resin portion 25 may be formed in the formation region of the passivation film 18 or may be formed so as to reach the outside of the passivation film 18. As shown in FIGS. 1 and 2, the second resin portion 25 may be formed avoiding the electrode 14. Specifically, the second resin portion 25 may be formed so as not to contact a portion of the electrode 14 exposed from the passivation film 18. As a result, moisture hardly enters the electrode 14 and a semiconductor device with high electrical reliability can be provided. The second resin portion 25 may be the same height as the first resin portion 20. The “height” here refers to the height from the surface of the semiconductor substrate 10 (the surface on which the electrode 14 is formed). The material of the second resin part 25 is not particularly limited, and any of the materials mentioned in the description of the first resin part 20 may be applied. The 1st resin part 20 and the 2nd resin part 25 may be formed with the same material.
[0015]
As shown in FIG. 1, the semiconductor device according to the present embodiment has a wiring 30. In general, a plurality of wirings 30 are formed. The wiring 30 may be formed of a single layer or a plurality of layers. Although the material of the wiring 30 is not specifically limited, For example, you may have the layer formed with Cu. The wiring 30 is electrically connected to the electrode 14. The wiring 30 may cover the entire portion of the electrode 14 exposed from the passivation film 18. The wiring 30 is formed so as to extend from the electrode 14 to the upper surface of the first resin portion 20 (surface opposite to the passivation film 18). The wiring 30 has a land 32 on the first resin portion 20. The land 32 is a part of the wiring 30. That is, the wiring 30 includes a land 32 and a line that electrically connects the land 32 and the electrode 14. The land 32 may be wider than the line of the wiring 30. The planar shape of the land 32 is not particularly limited, but may be circular, for example. A plurality of lands 32 may be formed on the upper surface of the first resin portion 20. The wiring 30 may be formed so that at least a part of the line reaches the upper surface of the first resin portion 20.
[0016]
As shown in FIG. 1, the semiconductor device according to the present embodiment has a resin layer 40. The resin layer 40 may be referred to as a solder resist. The resin layer 40 is formed so as to cover the second resin portion 25 from above the first resin portion 20 and the wiring 30. As shown in FIG. 1, the resin layer 40 may be formed in a region inside the surrounding member 16. By forming the resin layer 40 in a region inside the surrounding member 16, the formation region of the resin layer 40 can be reduced. That is, the resin layer 40 can be formed away from the end of the semiconductor substrate 10. Thereby, the shrinkage stress of the resin layer 40 can be prevented from being applied to the end surface of the semiconductor substrate 10, and a highly reliable semiconductor device can be provided. At this time, the second resin portion 25 is formed inside the surrounding member 16. However, apart from this, the resin layer 40 may be formed so as to have a portion overlapping the surrounding member 16 (not shown). Moreover, the resin layer 40 may be formed in the formation region of the passivation film 18 as shown in FIG. Alternatively, the resin layer 40 may be formed so as to reach the outside of the passivation film 18.
[0017]
The resin layer 40 may have an opening 42. The opening 42 exposes at least a part of each land 32. By exposing the land 32 from the opening 42, an electrical connection between an external terminal 50 and a land 32 described later can be achieved. For example, the resin layer 40 may be formed so that the center portion of the land 32 is exposed from the opening 42 and the peripheral portion of the land 32 is covered.
[0018]
As shown in FIG. 1, the semiconductor device according to the present embodiment may have an external terminal 50. The external terminal 50 is provided on the land 32. The external terminal 50 is formed so as to pass inside the opening 42 of the resin layer 40. At this time, a portion arranged in the opening 42 in the external terminal 50 may be referred to as a root portion 52. The external terminal 50 is a metal having conductivity (for example, an alloy) and is melted to achieve electrical connection (for example, solder). The external terminal 50 may be formed of either a soft solder or a hard solder. The external terminal 50 may have a spherical shape, for example, a solder ball.
[0019]
The semiconductor device 1 according to the embodiment to which the present invention is applied is configured as described above. Usually, heat is applied to a semiconductor device in a manufacturing process of the semiconductor device or a process of mounting the semiconductor device on a mother board or the like. As a result, the resin layer (solder resist) contracts, and force may be applied to the passivation film and the semiconductor substrate. By the way, the semiconductor device 1 according to the embodiment to which the present invention is applied has the second resin portion 25, and the resin layer 40 (solder resist) is formed so as to cover the second resin portion 25. It becomes. As a result, the stress generated by the contraction of the resin layer 40 can be absorbed by the second resin portion 25. Therefore, it is possible to provide a highly reliable semiconductor device that is not easily affected by the shrinkage stress of the resin layer 40. FIG. 3 shows a circuit board 1000 on which the semiconductor device 1 according to the embodiment to which the present invention is applied is mounted. Further, as an electronic device having the semiconductor device according to the embodiment to which the present invention is applied, FIG. 4 shows a notebook personal computer and FIG. 5 shows a mobile phone.
[0020]
Hereinafter, a method for manufacturing the semiconductor device 1 according to the embodiment to which the present invention is applied will be described. The method for manufacturing the semiconductor device 1 includes preparing the semiconductor substrate 10. Any of the contents already described may be applied to the semiconductor substrate 10. For example, the semiconductor substrate 10 includes the electrode 14, the surrounding member 16, and the passivation film 18, and the integrated circuit 12 is formed.
[0021]
The method for manufacturing the semiconductor device 1 includes forming the first resin portion 20 around the electrode 14 on the surface of the semiconductor substrate 10 where the electrode 14 is formed, avoiding the electrode 14. In the manufacturing method of the semiconductor device 1, the second resin portion 25 is integrated so as to surround all the electrodes 14 while avoiding a region in which the surrounding member 16 is planarly overlapped with the surface of the semiconductor substrate 10 on which the electrodes 14 are formed. Forming. Here, the first resin portion 20 and the second resin portion 25 may be formed by any of the methods already known. These may be formed in different steps, or may be formed in a lump. By forming the first resin portion 20 and the second resin portion 25 together, the manufacturing efficiency of the semiconductor device can be increased. For example, the first resin portion 20 and the second resin portion 25 are formed by forming a resin layer on the entire surface of the semiconductor substrate 10 (the surface on which the electrode 14 is formed), and then performing exposure and development. It may be formed. The first resin portion 20 and the second resin portion 25 may be collectively formed by adjusting the mask pattern. However, separately from this, the first resin part 20 and the second resin part 25 may be formed by applying, for example, a screen printing method or the like.
[0022]
The manufacturing method of the semiconductor device 1 includes forming the wiring 30 so as to have the land 32 on the second resin portion 25 electrically connected to the electrode 14. The wiring 30 may be formed by applying any known method.
[0023]
The method for manufacturing the semiconductor device 1 includes forming the resin layer 40 from above the first resin portion 20 and the wiring 30 so as to cover the second resin portion 25. The resin layer 40 may be formed to have the opening 42.
[0024]
The method for manufacturing the semiconductor device 1 may include forming the external terminal 50. The semiconductor device 1 may be manufactured through a step of forming a base reinforcing material (not shown) and a step of cutting the semiconductor substrate into individual pieces when the semiconductor substrate is prepared as a semiconductor wafer. As a method for manufacturing a semiconductor device, any matter that can be derived from the contents described in the description of the configuration of the semiconductor device 1 may be applied.
[0025]
In addition, this invention is not limited to embodiment mentioned above, A various deformation | transformation is possible. For example, the present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same objects and effects). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.
[Brief description of the drawings]
FIG. 1 is a diagram for explaining a semiconductor device according to an embodiment to which the present invention is applied;
FIG. 2 is a diagram for explaining a semiconductor device according to an embodiment to which the invention is applied;
FIG. 3 is a diagram showing a circuit board on which a semiconductor device according to an embodiment to which the present invention is applied is mounted.
FIG. 4 is a diagram illustrating an electronic apparatus having a semiconductor device according to an embodiment to which the invention is applied.
FIG. 5 is a diagram illustrating an electronic apparatus including the semiconductor device according to the embodiment to which the invention is applied.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Semiconductor substrate, 12 Integrated circuit, 14 Electrode, 16 Enclosing member, 18 Passivation film, 20 1st resin part, 25 2nd resin part, 30 Wiring, 32 land, 40 Resin layer, 50 External terminal

Claims (11)

An electrode electrically connected to the inside, a surrounding member integrally formed so as to surround all the electrodes in a region outside the electrode on the surface on which the electrodes are formed, and each of the electrodes A semiconductor substrate on which an integrated circuit is formed, having a passivation film that covers the electrode and the surrounding member so as to expose at least a portion thereof;
A first resin portion formed avoiding the electrode at a central portion of the surface of the semiconductor substrate on which the electrode is formed;
A second resin portion integrally formed so as to surround all of the electrodes, which is disposed so as to avoid a region overlapping with the surrounding member in a plane on the surface of the semiconductor substrate on which the electrodes are formed;
A wiring electrically connected to the electrode and having a land on the first resin portion;
A semiconductor device comprising: a resin layer formed so as to cover the second resin portion from above the first resin portion and the wiring. The semiconductor device according to claim 1,
The second resin portion is a semiconductor device formed so as to avoid the electrode. The semiconductor device according to claim 1 or claim 2,
The first resin portion and the second resin portion are semiconductor devices having the same height. The semiconductor device according to any one of claims 1 to 3,
The first resin portion and the second resin portion are semiconductor devices formed of the same material. A circuit board on which the semiconductor device according to claim 1 is mounted. An electronic apparatus comprising the semiconductor device according to claim 1. An electrode electrically connected to the inside, a surrounding member integrally formed so as to surround all the electrodes in a region outside the electrode on the surface on which the electrodes are formed, and each of the electrodes Providing a semiconductor substrate on which an integrated circuit is formed, having a passivation film covering the electrode and the surrounding member so as to expose at least a part thereof;
Forming a first resin portion in the center of the surface of the semiconductor substrate on which the electrode is formed, avoiding the electrode;
Avoiding a region overlapping with the surrounding member in a plane on the surface of the semiconductor substrate on which the electrodes are formed, and integrally forming the second resin portion so as to surround all the electrodes;
Electrically connecting to the electrode and forming a wiring having a land on the first resin portion; and
A method for manufacturing a semiconductor device, comprising: forming a resin layer over the first resin portion and the wiring so as to cover the second resin portion. The method of manufacturing a semiconductor device according to claim 7.
A method of manufacturing a semiconductor device, wherein the second resin portion is formed avoiding the electrode. In the manufacturing method of the semiconductor device according to claim 7 or claim 8,
A method of manufacturing a semiconductor device, wherein the first resin portion and the second resin portion are formed in a lump. In the manufacturing method of the semiconductor device in any one of Claims 7-9,
A method of manufacturing a semiconductor device, wherein the first resin portion and the second resin portion are formed at the same height. In the manufacturing method of the semiconductor device in any one of Claims 7-10,
A method for manufacturing a semiconductor device, wherein the first resin portion and the second resin portion are formed of the same material.

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