JP2004531066A5 - - Google Patents

Download PDF

Info

Publication number
JP2004531066A5
JP2004531066A5 JP2003500941A JP2003500941A JP2004531066A5 JP 2004531066 A5 JP2004531066 A5 JP 2004531066A5 JP 2003500941 A JP2003500941 A JP 2003500941A JP 2003500941 A JP2003500941 A JP 2003500941A JP 2004531066 A5 JP2004531066 A5 JP 2004531066A5
Authority
JP
Japan
Prior art keywords
group
scan lines
dose correction
scan
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003500941A
Other languages
English (en)
Japanese (ja)
Other versions
JP4101746B2 (ja
JP2004531066A (ja
Filing date
Publication date
Priority claimed from US10/152,887 external-priority patent/US20020175297A1/en
Application filed filed Critical
Publication of JP2004531066A publication Critical patent/JP2004531066A/ja
Publication of JP2004531066A5 publication Critical patent/JP2004531066A5/ja
Application granted granted Critical
Publication of JP4101746B2 publication Critical patent/JP4101746B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2003500941A 2001-05-25 2002-05-23 可変空間繰り返し度の走査線をもつイオン注入のための方法および装置 Expired - Fee Related JP4101746B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US29375401P 2001-05-25 2001-05-25
US10/152,887 US20020175297A1 (en) 2001-05-25 2002-05-21 Methods and apparatus for ion implantation with variable spatial frequency scan lines
PCT/US2002/016282 WO2002097853A1 (en) 2001-05-25 2002-05-23 Methods and apparatus for ion implantation with variable spatial frequency scan lines

Publications (3)

Publication Number Publication Date
JP2004531066A JP2004531066A (ja) 2004-10-07
JP2004531066A5 true JP2004531066A5 (enExample) 2006-01-05
JP4101746B2 JP4101746B2 (ja) 2008-06-18

Family

ID=26849958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003500941A Expired - Fee Related JP4101746B2 (ja) 2001-05-25 2002-05-23 可変空間繰り返し度の走査線をもつイオン注入のための方法および装置

Country Status (6)

Country Link
US (1) US20020175297A1 (enExample)
EP (1) EP1402559A1 (enExample)
JP (1) JP4101746B2 (enExample)
KR (1) KR20040005988A (enExample)
CN (1) CN1308998C (enExample)
WO (1) WO2002097853A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050061997A1 (en) * 2003-09-24 2005-03-24 Benveniste Victor M. Ion beam slit extraction with mass separation
US6903350B1 (en) * 2004-06-10 2005-06-07 Axcelis Technologies, Inc. Ion beam scanning systems and methods for improved ion implantation uniformity
US7566886B2 (en) * 2006-08-14 2009-07-28 Axcelis Technologies, Inc. Throughput enhancement for scanned beam ion implanters
EP2404219B1 (en) * 2009-03-06 2013-02-13 Micronic Mydata AB Rotor imaging system and method with variable-rate pixel clock
US8227773B2 (en) * 2010-07-29 2012-07-24 Axcelis Technologies, Inc. Versatile beam glitch detection system
JP5638995B2 (ja) * 2011-03-28 2014-12-10 株式会社Ｓｅｎ イオン注入方法及びイオン注入装置
JP2013089409A (ja) * 2011-10-17 2013-05-13 Sen Corp イオン注入装置及びイオン注入方法
CN103972011B (zh) * 2014-05-20 2016-06-15 上海华力微电子有限公司 离子注入设备及离子注入方法
JP5970583B2 (ja) * 2015-04-23 2016-08-17 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入方法
US10497540B2 (en) * 2017-01-09 2019-12-03 Tel Epion Inc. Compensated location specific processing apparatus and method
JP7242469B2 (ja) * 2019-08-07 2023-03-20 住友重機械イオンテクノロジー株式会社 イオン注入装置およびイオン注入方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4283631A (en) * 1980-02-22 1981-08-11 Varian Associates, Inc. Bean scanning and method of use for ion implantation
JPH077658B2 (ja) * 1989-05-15 1995-01-30 日新電機株式会社 イオン注入装置
JPH0770296B2 (ja) * 1989-05-15 1995-07-31 日新電機株式会社 イオン注入装置
US5003183A (en) * 1989-05-15 1991-03-26 Nissin Electric Company, Limited Ion implantation apparatus and method of controlling the same
US5319212A (en) * 1992-10-07 1994-06-07 Genus, Inc. Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors
US5531420A (en) * 1994-07-01 1996-07-02 Eaton Corporation Ion beam electron neutralizer
US5760409A (en) * 1996-06-14 1998-06-02 Eaton Corporation Dose control for use in an ion implanter
US6323497B1 (en) * 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation

Similar Documents

Publication Publication Date Title
JP2004531066A5 (enExample)
CN101076875B (zh) 离子束植入电流、点宽与位置调校
JP6907257B2 (ja) 電子ビーム装置
US10222476B2 (en) Scanning method and surveying system with scanning functionality
CN1429397A (zh) 离子注入机中的高效率扫描
CN1256752C (zh) 控制静电透镜的方法和离子注入装置
JP6847046B2 (ja) 注入処理制御装置及びイオン注入装置
CN101789366B (zh) 分区域激光退火及前馈工艺控制
KR101346155B1 (ko) 빔 처리 시스템 및 빔 처리 방법
WO2002078045A3 (en) Methods and apparatus for scanned beam uniformity adjustment in ion implanters
JP2018516434A5 (ja) 注入処理制御装置及びイオン注入装置
JP4471009B2 (ja) イオン注入方法およびイオン注入装置
JP2010500736A (ja) 走査されたイオンビーム注入装置のための処理能力の向上
JP4471008B2 (ja) イオン注入方法およびイオン注入装置
US6815675B1 (en) Method and system for e-beam scanning
US6661016B2 (en) Ion implantation uniformity correction using beam current control
JP4101746B2 (ja) 可変空間繰り返し度の走査線をもつイオン注入のための方法および装置
CN111702326B (zh) 一种激光表面加工方法及系统
CN119381234A (zh) 电子束扫描控制方法、装置以及存储介质
US20150104885A1 (en) Moveable current sensor for increasing ion beam utilization during ion implantation
KR100982850B1 (ko) 기판을 주입하는 방법 및 상기 방법을 수행하기 위한 이온 주입기
JP2005522843A5 (enExample)
JP2003166815A (ja) 物体の三次元高さ計測方法
JP2007149348A (ja) 走査電子顕微鏡
CN119347105B (zh) 一种反向间隙补偿方法、系统、终端设备及存储介质