KR20040005988A - 가변 공간 주파수 주사선으로 이온 주입하는 방법 및 장치 - Google Patents

가변 공간 주파수 주사선으로 이온 주입하는 방법 및 장치 Download PDF

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Publication number
KR20040005988A
KR20040005988A KR10-2003-7015412A KR20037015412A KR20040005988A KR 20040005988 A KR20040005988 A KR 20040005988A KR 20037015412 A KR20037015412 A KR 20037015412A KR 20040005988 A KR20040005988 A KR 20040005988A
Authority
KR
South Korea
Prior art keywords
dose
scan line
spatial frequency
ion beam
dose correction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR10-2003-7015412A
Other languages
English (en)
Korean (ko)
Inventor
제이 티. 스케어르
그레고리 알. 기빌라로
Original Assignee
베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. filed Critical 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Publication of KR20040005988A publication Critical patent/KR20040005988A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30455—Correction during exposure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H01J2237/31713—Focused ion beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR10-2003-7015412A 2001-05-25 2002-05-23 가변 공간 주파수 주사선으로 이온 주입하는 방법 및 장치 Withdrawn KR20040005988A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US29375401P 2001-05-25 2001-05-25
US60/293,754 2001-05-25
US10/152,887 US20020175297A1 (en) 2001-05-25 2002-05-21 Methods and apparatus for ion implantation with variable spatial frequency scan lines
US10/152,887 2002-05-21
PCT/US2002/016282 WO2002097853A1 (en) 2001-05-25 2002-05-23 Methods and apparatus for ion implantation with variable spatial frequency scan lines

Publications (1)

Publication Number Publication Date
KR20040005988A true KR20040005988A (ko) 2004-01-16

Family

ID=26849958

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7015412A Withdrawn KR20040005988A (ko) 2001-05-25 2002-05-23 가변 공간 주파수 주사선으로 이온 주입하는 방법 및 장치

Country Status (6)

Country Link
US (1) US20020175297A1 (enExample)
EP (1) EP1402559A1 (enExample)
JP (1) JP4101746B2 (enExample)
KR (1) KR20040005988A (enExample)
CN (1) CN1308998C (enExample)
WO (1) WO2002097853A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130041737A (ko) * 2011-10-17 2013-04-25 가부시키가이샤 에스이엔 이온주입장치 및 이온주입방법

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050061997A1 (en) * 2003-09-24 2005-03-24 Benveniste Victor M. Ion beam slit extraction with mass separation
US6903350B1 (en) * 2004-06-10 2005-06-07 Axcelis Technologies, Inc. Ion beam scanning systems and methods for improved ion implantation uniformity
US7566886B2 (en) * 2006-08-14 2009-07-28 Axcelis Technologies, Inc. Throughput enhancement for scanned beam ion implanters
US8472089B2 (en) * 2009-03-06 2013-06-25 Micronic Laser Systems Rotor imaging system and method with variable-rate pixel clock
US8227773B2 (en) 2010-07-29 2012-07-24 Axcelis Technologies, Inc. Versatile beam glitch detection system
JP5638995B2 (ja) * 2011-03-28 2014-12-10 株式会社Ｓｅｎ イオン注入方法及びイオン注入装置
CN103972011B (zh) * 2014-05-20 2016-06-15 上海华力微电子有限公司 离子注入设备及离子注入方法
JP5970583B2 (ja) * 2015-04-23 2016-08-17 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入方法
WO2018129379A1 (en) * 2017-01-09 2018-07-12 Tel Epion Inc. Compensated location specific processing apparatus and method
JP7242469B2 (ja) * 2019-08-07 2023-03-20 住友重機械イオンテクノロジー株式会社 イオン注入装置およびイオン注入方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4283631A (en) * 1980-02-22 1981-08-11 Varian Associates, Inc. Bean scanning and method of use for ion implantation
JPH0770296B2 (ja) * 1989-05-15 1995-07-31 日新電機株式会社 イオン注入装置
JPH077658B2 (ja) * 1989-05-15 1995-01-30 日新電機株式会社 イオン注入装置
US5003183A (en) * 1989-05-15 1991-03-26 Nissin Electric Company, Limited Ion implantation apparatus and method of controlling the same
US5319212A (en) * 1992-10-07 1994-06-07 Genus, Inc. Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors
US5531420A (en) * 1994-07-01 1996-07-02 Eaton Corporation Ion beam electron neutralizer
US5760409A (en) * 1996-06-14 1998-06-02 Eaton Corporation Dose control for use in an ion implanter
US6323497B1 (en) * 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130041737A (ko) * 2011-10-17 2013-04-25 가부시키가이샤 에스이엔 이온주입장치 및 이온주입방법

Also Published As

Publication number Publication date
EP1402559A1 (en) 2004-03-31
WO2002097853A1 (en) 2002-12-05
JP4101746B2 (ja) 2008-06-18
JP2004531066A (ja) 2004-10-07
US20020175297A1 (en) 2002-11-28
CN1308998C (zh) 2007-04-04
CN1575503A (zh) 2005-02-02

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20031125

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid