JP2004510306A - バッチ型イオン注入システムにおいてウエハ裏面に冷却ガスを供給する装置 - Google Patents

バッチ型イオン注入システムにおいてウエハ裏面に冷却ガスを供給する装置 Download PDF

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Publication number
JP2004510306A
JP2004510306A JP2002531454A JP2002531454A JP2004510306A JP 2004510306 A JP2004510306 A JP 2004510306A JP 2002531454 A JP2002531454 A JP 2002531454A JP 2002531454 A JP2002531454 A JP 2002531454A JP 2004510306 A JP2004510306 A JP 2004510306A
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JP
Japan
Prior art keywords
workpiece
seal
support member
ring
cooling gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002531454A
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English (en)
Japanese (ja)
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JP2004510306A5 (enExample
Inventor
デビッド　ジェームズ　チップマン
ブリアン　クリストファー　ラゴス
ロバート　ジョン　ミッチェル
ガリー　ジョイ　ローゼン
デイル　キース　ストーン
Original Assignee
アクセリス　テクノロジーズ　インコーポレーテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by アクセリス　テクノロジーズ　インコーポレーテッド filed Critical アクセリス　テクノロジーズ　インコーポレーテッド
Publication of JP2004510306A publication Critical patent/JP2004510306A/ja
Publication of JP2004510306A5 publication Critical patent/JP2004510306A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2002531454A 2000-09-26 2001-08-23 バッチ型イオン注入システムにおいてウエハ裏面に冷却ガスを供給する装置 Pending JP2004510306A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/670,241 US6583428B1 (en) 2000-09-26 2000-09-26 Apparatus for the backside gas cooling of a wafer in a batch ion implantation system
PCT/GB2001/003795 WO2002027754A2 (en) 2000-09-26 2001-08-23 An apparatus for the backside gas cooling of a wafer in a batch ion implantation system

Publications (2)

Publication Number Publication Date
JP2004510306A true JP2004510306A (ja) 2004-04-02
JP2004510306A5 JP2004510306A5 (enExample) 2005-04-07

Family

ID=24689580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002531454A Pending JP2004510306A (ja) 2000-09-26 2001-08-23 バッチ型イオン注入システムにおいてウエハ裏面に冷却ガスを供給する装置

Country Status (8)

Country Link
US (1) US6583428B1 (enExample)
EP (1) EP1320866A2 (enExample)
JP (1) JP2004510306A (enExample)
KR (1) KR20040005822A (enExample)
CN (1) CN1466770A (enExample)
AU (1) AU2001282326A1 (enExample)
TW (1) TW504740B (enExample)
WO (1) WO2002027754A2 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2425838A1 (en) 2000-10-17 2002-04-25 Ronald J. Mosso Coating formation by reactive deposition
US7064491B2 (en) * 2000-11-30 2006-06-20 Semequip, Inc. Ion implantation system and control method
US6734439B2 (en) * 2001-10-25 2004-05-11 Allan Weed Wafer pedestal tilt mechanism and cooling system
US6695270B1 (en) * 2002-08-15 2004-02-24 Ole Falk Smed Flat panel display system
JP2006179613A (ja) * 2004-12-21 2006-07-06 Rigaku Corp 半導体ウエハ縦型熱処理装置用磁性流体シールユニット
US7867403B2 (en) * 2006-06-05 2011-01-11 Jason Plumhoff Temperature control method for photolithographic substrate
US7629597B2 (en) * 2006-08-18 2009-12-08 Axcelis Technologies, Inc. Deposition reduction system for an ion implanter
US20080121821A1 (en) * 2006-11-27 2008-05-29 Varian Semiconductor Equipment Associates Inc. Techniques for low-temperature ion implantation
US7528392B2 (en) * 2006-11-27 2009-05-05 Varian Semiconductor Equipment Associates, Inc. Techniques for low-temperature ion implantation
US7528391B2 (en) * 2006-12-22 2009-05-05 Varian Semiconductor Equipment Associates, Inc. Techniques for reducing contamination during ion implantation
US7559557B2 (en) * 2007-08-22 2009-07-14 Varian Semiconductor Equipment Associates, Inc. Sealing between vacuum chambers
US8149256B2 (en) * 2008-06-04 2012-04-03 Varian Semiconductor Equipment Associates, Inc. Techniques for changing temperature of a platen
US20100084117A1 (en) * 2008-10-02 2010-04-08 Fish Roger B Platen cooling mechanism for cryogenic ion implanting
US20100155026A1 (en) * 2008-12-19 2010-06-24 Walther Steven R Condensible gas cooling system
US7977652B2 (en) * 2009-09-29 2011-07-12 Varian Semiconductor Equipment Associates, Inc. Optical heater for cryogenic ion implanter surface regeneration
CN103594553B (zh) * 2013-10-23 2015-10-28 中国电子科技集团公司第四十八研究所 一种阵列式硅片装载靶盘
CN107154346B (zh) * 2017-05-19 2021-03-16 京东方科技集团股份有限公司 一种膜层的掺杂方法、薄膜晶体管及其制作方法
CN109243954B (zh) * 2018-10-12 2023-11-03 江苏晋誉达半导体股份有限公司 一种离子注入机
AU2019400946B2 (en) * 2018-12-21 2025-07-31 Ozone 1 Pty Ltd Improvements in plasma reactors
US10971327B1 (en) * 2019-12-06 2021-04-06 Applied Materials, Inc. Cryogenic heat transfer system
US12002649B2 (en) 2021-12-10 2024-06-04 Applied Materials, Inc. Spinning disk with electrostatic clamped platens for ion implantation
CN116951003A (zh) * 2022-04-20 2023-10-27 江苏鲁汶仪器股份有限公司 一种磁流体轴

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514636A (en) * 1979-09-14 1985-04-30 Eaton Corporation Ion treatment apparatus
US4419584A (en) 1981-07-14 1983-12-06 Eaton Semi-Conductor Implantation Corporation Treating workpiece with beams
JPS5950275A (ja) 1982-09-16 1984-03-23 Rigaku Keisoku Kk 磁性流体軸封装置
US5389793A (en) 1983-08-15 1995-02-14 Applied Materials, Inc. Apparatus and methods for ion implantation
US4567938A (en) * 1984-05-02 1986-02-04 Varian Associates, Inc. Method and apparatus for controlling thermal transfer in a cyclic vacuum processing system
US4733091A (en) * 1984-09-19 1988-03-22 Applied Materials, Inc. Systems and methods for ion implantation of semiconductor wafers
JPS61264649A (ja) * 1985-05-20 1986-11-22 Ulvac Corp 基板冷却装置
US4899059A (en) 1988-05-18 1990-02-06 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters
US4965862A (en) 1988-05-18 1990-10-23 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters
US5238499A (en) 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
US5641969A (en) * 1996-03-28 1997-06-24 Applied Materials, Inc. Ion implantation apparatus
US5954342A (en) 1997-04-25 1999-09-21 Mfs Technology Ltd Magnetic fluid seal apparatus for a rotary shaft
US6222196B1 (en) * 1998-11-19 2001-04-24 Axcelis Technologies, Inc. Rotatable workpiece support including cyclindrical workpiece support surfaces for an ion beam implanter
US6412289B1 (en) 2001-05-15 2002-07-02 General Electric Company Synchronous machine having cryogenic gas transfer coupling to rotor with super-conducting coils

Also Published As

Publication number Publication date
US6583428B1 (en) 2003-06-24
AU2001282326A1 (en) 2002-04-08
CN1466770A (zh) 2004-01-07
KR20040005822A (ko) 2004-01-16
WO2002027754A3 (en) 2002-06-13
EP1320866A2 (en) 2003-06-25
WO2002027754A2 (en) 2002-04-04
TW504740B (en) 2002-10-01

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