TW504740B - An apparatus for the backside gas cooling of a wafer in a batch ion implantation system - Google Patents
An apparatus for the backside gas cooling of a wafer in a batch ion implantation system Download PDFInfo
- Publication number
- TW504740B TW504740B TW090121920A TW90121920A TW504740B TW 504740 B TW504740 B TW 504740B TW 090121920 A TW090121920 A TW 090121920A TW 90121920 A TW90121920 A TW 90121920A TW 504740 B TW504740 B TW 504740B
- Authority
- TW
- Taiwan
- Prior art keywords
- work
- item
- seal
- patent application
- work object
- Prior art date
Links
- 238000005468 ion implantation Methods 0.000 title description 18
- 238000001816 cooling Methods 0.000 title description 5
- 239000007789 gas Substances 0.000 claims abstract description 103
- 238000000034 method Methods 0.000 claims abstract description 73
- 230000008569 process Effects 0.000 claims abstract description 66
- 239000000112 cooling gas Substances 0.000 claims abstract description 62
- 238000007789 sealing Methods 0.000 claims description 78
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 238000013459 approach Methods 0.000 claims 1
- 239000012809 cooling fluid Substances 0.000 abstract description 6
- 238000009987 spinning Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 68
- 238000010884 ion-beam technique Methods 0.000 description 47
- 235000012431 wafers Nutrition 0.000 description 30
- 239000012530 fluid Substances 0.000 description 16
- 239000002245 particle Substances 0.000 description 11
- 239000007943 implant Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000011553 magnetic fluid Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000000605 extraction Methods 0.000 description 6
- 238000002513 implantation Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000002826 coolant Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- 239000004636 vulcanized rubber Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229920002631 room-temperature vulcanizate silicone Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- -1 stele Chemical compound 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000026676 system process Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/670,241 US6583428B1 (en) | 2000-09-26 | 2000-09-26 | Apparatus for the backside gas cooling of a wafer in a batch ion implantation system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW504740B true TW504740B (en) | 2002-10-01 |
Family
ID=24689580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090121920A TW504740B (en) | 2000-09-26 | 2001-09-04 | An apparatus for the backside gas cooling of a wafer in a batch ion implantation system |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6583428B1 (enExample) |
| EP (1) | EP1320866A2 (enExample) |
| JP (1) | JP2004510306A (enExample) |
| KR (1) | KR20040005822A (enExample) |
| CN (1) | CN1466770A (enExample) |
| AU (1) | AU2001282326A1 (enExample) |
| TW (1) | TW504740B (enExample) |
| WO (1) | WO2002027754A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI409898B (zh) * | 2007-08-22 | 2013-09-21 | Varian Semiconductor Equipment | 真空腔室間的密封 |
| TWI413168B (zh) * | 2006-11-27 | 2013-10-21 | Varian Semiconductor Equipment | 低溫離子植入技術 |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2425838A1 (en) | 2000-10-17 | 2002-04-25 | Ronald J. Mosso | Coating formation by reactive deposition |
| US7064491B2 (en) * | 2000-11-30 | 2006-06-20 | Semequip, Inc. | Ion implantation system and control method |
| US6734439B2 (en) * | 2001-10-25 | 2004-05-11 | Allan Weed | Wafer pedestal tilt mechanism and cooling system |
| US6695270B1 (en) * | 2002-08-15 | 2004-02-24 | Ole Falk Smed | Flat panel display system |
| JP2006179613A (ja) * | 2004-12-21 | 2006-07-06 | Rigaku Corp | 半導体ウエハ縦型熱処理装置用磁性流体シールユニット |
| US7867403B2 (en) * | 2006-06-05 | 2011-01-11 | Jason Plumhoff | Temperature control method for photolithographic substrate |
| US7629597B2 (en) * | 2006-08-18 | 2009-12-08 | Axcelis Technologies, Inc. | Deposition reduction system for an ion implanter |
| US20080121821A1 (en) * | 2006-11-27 | 2008-05-29 | Varian Semiconductor Equipment Associates Inc. | Techniques for low-temperature ion implantation |
| US7528391B2 (en) * | 2006-12-22 | 2009-05-05 | Varian Semiconductor Equipment Associates, Inc. | Techniques for reducing contamination during ion implantation |
| US8149256B2 (en) * | 2008-06-04 | 2012-04-03 | Varian Semiconductor Equipment Associates, Inc. | Techniques for changing temperature of a platen |
| US20100084117A1 (en) * | 2008-10-02 | 2010-04-08 | Fish Roger B | Platen cooling mechanism for cryogenic ion implanting |
| US20100155026A1 (en) * | 2008-12-19 | 2010-06-24 | Walther Steven R | Condensible gas cooling system |
| US7977652B2 (en) * | 2009-09-29 | 2011-07-12 | Varian Semiconductor Equipment Associates, Inc. | Optical heater for cryogenic ion implanter surface regeneration |
| CN103594553B (zh) * | 2013-10-23 | 2015-10-28 | 中国电子科技集团公司第四十八研究所 | 一种阵列式硅片装载靶盘 |
| CN107154346B (zh) * | 2017-05-19 | 2021-03-16 | 京东方科技集团股份有限公司 | 一种膜层的掺杂方法、薄膜晶体管及其制作方法 |
| CN109243954B (zh) * | 2018-10-12 | 2023-11-03 | 江苏晋誉达半导体股份有限公司 | 一种离子注入机 |
| ES3018612T3 (es) * | 2018-12-21 | 2025-05-16 | Ozone 1 Pty Ltd | Mejoras en reactores de plasma |
| US10971327B1 (en) | 2019-12-06 | 2021-04-06 | Applied Materials, Inc. | Cryogenic heat transfer system |
| US12002649B2 (en) | 2021-12-10 | 2024-06-04 | Applied Materials, Inc. | Spinning disk with electrostatic clamped platens for ion implantation |
| CN116951003A (zh) * | 2022-04-20 | 2023-10-27 | 江苏鲁汶仪器股份有限公司 | 一种磁流体轴 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4514636A (en) * | 1979-09-14 | 1985-04-30 | Eaton Corporation | Ion treatment apparatus |
| US4419584A (en) | 1981-07-14 | 1983-12-06 | Eaton Semi-Conductor Implantation Corporation | Treating workpiece with beams |
| JPS5950275A (ja) | 1982-09-16 | 1984-03-23 | Rigaku Keisoku Kk | 磁性流体軸封装置 |
| US5389793A (en) | 1983-08-15 | 1995-02-14 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
| US4567938A (en) * | 1984-05-02 | 1986-02-04 | Varian Associates, Inc. | Method and apparatus for controlling thermal transfer in a cyclic vacuum processing system |
| US4733091A (en) * | 1984-09-19 | 1988-03-22 | Applied Materials, Inc. | Systems and methods for ion implantation of semiconductor wafers |
| JPS61264649A (ja) * | 1985-05-20 | 1986-11-22 | Ulvac Corp | 基板冷却装置 |
| US4899059A (en) | 1988-05-18 | 1990-02-06 | Varian Associates, Inc. | Disk scanning apparatus for batch ion implanters |
| US4965862A (en) | 1988-05-18 | 1990-10-23 | Varian Associates, Inc. | Disk scanning apparatus for batch ion implanters |
| US5238499A (en) | 1990-07-16 | 1993-08-24 | Novellus Systems, Inc. | Gas-based substrate protection during processing |
| US5641969A (en) * | 1996-03-28 | 1997-06-24 | Applied Materials, Inc. | Ion implantation apparatus |
| US5954342A (en) | 1997-04-25 | 1999-09-21 | Mfs Technology Ltd | Magnetic fluid seal apparatus for a rotary shaft |
| US6222196B1 (en) * | 1998-11-19 | 2001-04-24 | Axcelis Technologies, Inc. | Rotatable workpiece support including cyclindrical workpiece support surfaces for an ion beam implanter |
| US6412289B1 (en) | 2001-05-15 | 2002-07-02 | General Electric Company | Synchronous machine having cryogenic gas transfer coupling to rotor with super-conducting coils |
-
2000
- 2000-09-26 US US09/670,241 patent/US6583428B1/en not_active Expired - Fee Related
-
2001
- 2001-08-23 AU AU2001282326A patent/AU2001282326A1/en not_active Abandoned
- 2001-08-23 JP JP2002531454A patent/JP2004510306A/ja active Pending
- 2001-08-23 EP EP01960939A patent/EP1320866A2/en not_active Withdrawn
- 2001-08-23 KR KR10-2003-7004031A patent/KR20040005822A/ko not_active Withdrawn
- 2001-08-23 CN CNA018163548A patent/CN1466770A/zh active Pending
- 2001-08-23 WO PCT/GB2001/003795 patent/WO2002027754A2/en not_active Ceased
- 2001-09-04 TW TW090121920A patent/TW504740B/zh not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI413168B (zh) * | 2006-11-27 | 2013-10-21 | Varian Semiconductor Equipment | 低溫離子植入技術 |
| TWI409898B (zh) * | 2007-08-22 | 2013-09-21 | Varian Semiconductor Equipment | 真空腔室間的密封 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002027754A3 (en) | 2002-06-13 |
| WO2002027754A2 (en) | 2002-04-04 |
| KR20040005822A (ko) | 2004-01-16 |
| JP2004510306A (ja) | 2004-04-02 |
| CN1466770A (zh) | 2004-01-07 |
| EP1320866A2 (en) | 2003-06-25 |
| US6583428B1 (en) | 2003-06-24 |
| AU2001282326A1 (en) | 2002-04-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |