JP2004343000A - Semiconductor module, non-contact integrated circuit tag having the semiconductor module, and method of manufacturing semiconductor module - Google Patents

Semiconductor module, non-contact integrated circuit tag having the semiconductor module, and method of manufacturing semiconductor module Download PDF

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Publication number
JP2004343000A
JP2004343000A JP2003140724A JP2003140724A JP2004343000A JP 2004343000 A JP2004343000 A JP 2004343000A JP 2003140724 A JP2003140724 A JP 2003140724A JP 2003140724 A JP2003140724 A JP 2003140724A JP 2004343000 A JP2004343000 A JP 2004343000A
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Prior art keywords
semiconductor module
semiconductor device
non
formed
resin
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JP2003140724A
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Japanese (ja)
Inventor
Tatsuya Ito
Hideto Noguchi
Yutaka Saito
Atsushi Tanaka
達也 伊藤
豊 斎藤
田中  敦
秀人 野口
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Fujikura Ltd
株式会社フジクラ
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Priority to JP2003140724A priority Critical patent/JP2004343000A/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor module which can reduce variations in characteristics and increase the product yield by keeping constant the interval between an antenna of a substrate and a metallic projection of a semiconductor device, and to provide a non-contact IC tag having the semiconductor module, and a method of manufacturing the semiconductor module. <P>SOLUTION: The semiconductor module, in which an IC chip 12 having a plurality of bump electrodes 4, 11 are mounted on a circuit substrate 1 having a dipole antenna 2 formed thereon, is characterised in that the bump electrodes 4 are connected to the dipole antenna 2 via a insulating fine particle-mixed resin 14. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【0001】 [0001]
【発明の属する技術分野】 BACKGROUND OF THE INVENTION
本発明は、基板のアンテナ部と半導体装置の金属突起との間隔を一定に保つことにより、特性のバラツキを小さくすることができ、その結果、製品の歩止まりを向上させることができる半導体モジュールとそれを備えた非接触ICタグ及び半導体モジュールの製造方法に関するものである。 The present invention, by keeping the distance between the metal projection of the antenna portion of the substrate and the semiconductor device to be constant, it is possible to reduce variations in characteristics, so that the semiconductor module can be improved walking blind product to a method of manufacturing the non-contact IC tag and a semiconductor module having the same.
【0002】 [0002]
【従来の技術】 BACKGROUND OF THE INVENTION
近年、交通、流通、情報通信等の分野においては、ダイポールアンテナ等の無線通信用のアンテナ部及び配線パターンが形成された回路基板上に、複数のバンプ電極(金属突起)を有するICチップ(半導体装置)を搭載した半導体モジュールが提案されている。 Recently, transportation, distribution, in the field of information communication such as a dipole antenna portion of the wireless communication, such as antennas and on a circuit board on which a wiring pattern is formed, IC chips (semiconductor having a plurality of bump electrodes (metal projection) semiconductor module with device) has been proposed.
この半導体モジュールは、ICチップによる高い情報処理能力を有し、情報の書き込みや読み出しを非接触にて高速で行うことができ、しかも、高いセキュリティ機能を有するという特徴があることから、交通システムにおける乗車券、書籍、CD、DVD等の情報媒体の商品管理に用いられるICタグ、オフィスビルやマンション等における非接触型のIDカードやカードキー等様々な分野で広く利用されている(例えば、特許文献1参照)。 The semiconductor module, since it has a high information processing capability by the IC chip, can be performed at a high speed writing and reading information in a non-contact, moreover, are characterized by having a high security function, in transport systems tickets, books, CD, IC tags to be used in the product management of information medium such as a DVD, is widely used in non-contact type ID a variety of fields such as a card or a card key in the office buildings and condominiums, etc. (for example, patent references 1).
【0003】 [0003]
【特許文献1】 [Patent Document 1]
特開平4−354404号公報【0004】 JP-A-4-354404 [0004]
図3は、従来の半導体モジュールを示す平面図、図4は同断面図であり、図において、符号1は回路基板、2は回路基板1上に形成されたダイポールアンテナ(アンテナ部)、3はこれらのダイポールアンテナ2、2に圧接されたICチップ(半導体装置)、4はICチップ3のバンプ電極(金属突起)、5はICチップ3をダイポールアンテナ2、2を含む回路基板1上に固定する熱硬化型樹脂である。 Figure 3 is a plan view showing a conventional semiconductor module, Fig. 4 is a similar sectional view, in FIG., Reference numeral 1 is a circuit board, 2 is a dipole antenna formed on the circuit board 1 (the antenna unit), 3 these dipole antennas 2,2 are pressed against the IC chip (semiconductor device), 4 bump electrode (metal protrusions) of the IC chip 3, 5 fixes the IC chip 3 on the circuit board 1 including the dipole antenna 2, 2 a thermosetting resin. この熱硬化型樹脂5は、例えば、紫外線硬化型等の光硬化型樹脂であってもよい。 The thermosetting resin 5 may be, for example, a photocurable resin of the ultraviolet curing type or the like.
この半導体モジュールは、製品の軽薄短小化、高密度化に適したフリップチップ実装方式を用いてICチップ3のバンプ電極4、4を回路基板1上のダイポールアンテナ2、2に圧接している。 The semiconductor module, miniaturization of a product, is pressed against the bump electrodes 4 of IC chip 3 to the dipole antenna 2, 2 on the circuit board 1 by using a flip chip mounting method suitable for high density.
【0005】 [0005]
【発明が解決しようとする課題】 [Problems that the Invention is to Solve
ところで、上述した従来の半導体モジュールでは、ICチップ3を回路基板1上のダイポールアンテナ2、2に圧接し固定する際に、ICチップ3のバンプ電極4、4と回路基板1上のダイポールアンテナ2、2との間に熱硬化型樹脂5が残った状態で両者を接続しているために、このICチップ3のバンプ電極4、4と回路基板1上のダイポールアンテナ2、2との間に残る熱硬化型樹脂5の厚みにバラツキが生じ易いという問題点があった。 Incidentally, in the conventional semiconductor module described above, when the pressure-fixing the IC chip 3 to the dipole antenna 2, 2 on the circuit board 1, IC chip 3 of the bump electrodes 4 and the circuit board 1 on the dipole antenna 2 , in order to connect the two in the state in which thermosetting resin 5 remained between 2, between the dipole antenna 2, 2 on the bump electrodes 4 and the circuit board 1 of the IC chip 3 variations in the thickness of the thermosetting resin 5 remaining there has been a problem that tends to occur. この厚みのバラツキを解消するには、圧接時の圧力をコントロールすればよいのであるが、圧力を高精度でコントロールすることは難しい。 The To eliminate the variation in the thickness, but it can I control the pressure during pressing, it is difficult to control the pressure with high accuracy. また、厚みのバラツキが大きかった場合、ICチップ3のバンプ電極4、4と回路基板1上のダイポールアンテナ2、2との間の容量Cが変化してしまい、その結果、高周波の発信特性のバラツキが大きくなり、製品としての歩留まりが低下するという問題点があった。 Also, if the variation in thickness is greater, the capacitance C between the dipole antenna 2, 2 on the bump electrodes 4 and the circuit board 1 of the IC chip 3 will change, so that the outgoing characteristics of the high-frequency variation is increased, the yield of the product is disadvantageously lowered.
【0006】 [0006]
本発明は、上記課題を解決するためになされたものであって、基板のアンテナ部と半導体装置の金属突起との間隔を一定に保つことにより、特性のバラツキを小さくすることができ、その結果、製品の歩止まりを向上させることができる半導体モジュールとそれを備えた非接触ICタグ及び半導体モジュールの製造方法を提供することを目的とする。 The present invention was made to solve the above problems, by keeping the distance between the metal projection of the antenna portion of the substrate and the semiconductor device to be constant, it is possible to reduce variations in characteristics, resulting , and to provide a manufacturing method of a semiconductor module and the non-contact IC tag and a semiconductor module including the same that can improve walking blind product.
【0007】 [0007]
【課題を解決するための手段】 In order to solve the problems]
上記課題を解決するために、本発明は次の様な半導体モジュールとそれを備えた非接触ICタグ及び半導体モジュールの製造方法を採用した。 In order to solve the above problems, the present invention adopts the producing method of the next such semiconductor module and the non-contact IC tag and a semiconductor module having the same.
すなわち、請求項1記載の半導体モジュールは、アンテナ部が形成された基板上に、複数の金属突起を有する半導体装置を搭載してなる半導体モジュールであって、前記半導体装置の少なくとも1対の金属突起を、非導電性微粒子を混入してなる樹脂を介して前記アンテナ部に接続してなることを特徴とする。 That is, the semiconductor module according to claim 1 is on the substrate on which the antenna portion is formed, a semiconductor module formed by mounting a semiconductor device having a plurality of metallic protrusions, at least one pair of metal projections of the semiconductor device and the non-conductive particles through a resin obtained by mixing and characterized by being connected to the antenna unit.
【0008】 [0008]
請求項2記載の半導体モジュールは、請求項1記載の半導体モジュールにおいて、前記1対の金属突起の少なくとも前記アンテナ部との接続領域を除く部分には、絶縁膜が形成されてなることを特徴とする。 The semiconductor module according to claim 2, wherein, in the semiconductor module according to claim 1, wherein, in the portion excluding the connection region of at least the antenna portion of the pair of metal projections, and wherein an insulating film is formed to.
【0009】 [0009]
請求項3記載の半導体モジュールは、請求項1または2記載の半導体モジュールにおいて、前記非導電性微粒子は、セラミックスまたは合成樹脂からなる微粒子であることを特徴とする。 The semiconductor module according to claim 3, in the semiconductor module according to claim 1 or 2, wherein the non-conductive fine particles is characterized by a fine particle composed of ceramics or synthetic resin.
【0010】 [0010]
請求項4記載の半導体モジュールは、請求項3記載の半導体モジュールにおいて、前記セラミックスまたは合成樹脂からなる微粒子は、単分散微粒子であることを特徴とする。 The semiconductor module according to claim 4, wherein, in the semiconductor module according to claim 3, fine particles made of the ceramic or synthetic resin, characterized in that it is a monodispersed fine particles.
【0011】 [0011]
請求項5記載の半導体モジュールは、請求項1ないし4のいずれか1項記載の半導体モジュールにおいて、前記半導体装置は、非接触ICタグ用の半導体装置であることを特徴とする。 The semiconductor module according to claim 5, in the semiconductor module according to any one of claims 1 to 4, wherein the semiconductor device is characterized in that a semiconductor device for non-contact IC tag.
【0012】 [0012]
請求項6記載の非接触ICタグは、請求項1ないし5のいずれか1項記載の半導体モジュールを備えてなることを特徴とする。 Non-contact IC tag according to claim 6 wherein is characterized by including a semiconductor module according to any one of claims 1 to 5.
【0013】 [0013]
請求項7記載の半導体モジュールの製造方法は、アンテナ部が形成された基板上に複数の金属突起を有する半導体装置を搭載してなる半導体モジュールの製造方法であって、前記基板上のアンテナ部の前記半導体装置の金属突起との接続領域に、非導電性微粒子を混入してなる樹脂層を形成する工程と、該樹脂層上に前記半導体装置の金属突起を載置し、該半導体装置の金属突起を前記樹脂層を介して前記アンテナ部に圧接する工程とを有することを特徴とする。 The method of manufacturing a semiconductor module according to claim 7, wherein, there is provided a method for manufacturing a semiconductor module formed by mounting a semiconductor device having a plurality of metal protrusions on the substrate on which the antenna portion is formed, the antenna portion on the substrate the connection area between the metal protrusion of the semiconductor device, and forming a resin layer formed by mixing a non-conductive particles, was placed a metal projection of the semiconductor device to the resin layer, the metal of the semiconductor device a projection through the resin layer and having a step of pressure contact to the antenna unit.
【0014】 [0014]
請求項8記載の半導体モジュールの製造方法は、請求項7記載の半導体モジュールの製造方法において、前記半導体装置の金属突起の少なくとも前記アンテナ部との接続領域を除く部分には、絶縁膜が形成されてなることを特徴とする。 The method of manufacturing a semiconductor module according to claim 8, wherein, in the method for manufacturing a semiconductor module according to claim 7, wherein the portion excluding the connection region of at least the antenna portion of the metal projection of the semiconductor device, the insulating film is formed characterized in that it comprises Te.
【0015】 [0015]
【発明の実施の形態】 DETAILED DESCRIPTION OF THE INVENTION
本発明の半導体モジュールとそれを備えた非接触ICタグ及び半導体モジュールの製造方法の一実施形態について図面に基づき説明する。 It will be described with reference to the accompanying drawings, an embodiment of a method for manufacturing a semiconductor module and the non-contact IC tag and a semiconductor module including the same of the present invention.
図1は、本実施形態の半導体モジュールを示す断面図であり、この半導体モジュールは、ダイポールアンテナ(アンテナ部)2が形成された回路基板1上に、複数のバンプ電極(金属突起)4、11、…を有するICチップ(半導体装置)12が搭載されている。 Figure 1 is a sectional view showing a semiconductor module of this embodiment, the semiconductor module on a dipole antenna (antenna portion) 2 a circuit board 1 is formed, a plurality of bump electrodes (metal protrusions) 4,11 , ... an IC chip (semiconductor device) 12 having mounted.
【0016】 [0016]
このICチップ12のバンプ電極4(図1では、一方のみ図示)及びICテスト用のバンプ電極11は、バンプ電極4の少なくともダイポールアンテナ2との接続領域、及びバンプ電極11のICテスタの端子との接続領域を除いて、パシベーション膜(保護・絶縁膜)13により覆われている。 (In FIG. 1, only one shown) bump electrodes 4 of the IC chip 12 and the bump electrodes 11 of the IC test, the IC tester terminals of at least dipole connection area between the antenna 2 and the bump electrodes 11 of the bump electrode 4 except for the connection region is covered with a passivation film (protection and insulating film) 13. すなわち、このパシベーション膜13には、ダイポールアンテナ2との接続領域であるバンプ電極4の略中央部を露出させるための開口13a、及びバンプ電極11の略中央部を露出させるための開口13bが形成されている。 That is, in the passivation film 13, an opening 13a for exposing the substantially central portion of the bump electrode 4 is connected regions of the dipole antenna 2, and an opening 13b for exposing the substantially central portion of the bump electrode 11 is formed It is.
【0017】 [0017]
ICチップ12は、集積回路(IC)の一方の主面上に複数の電極が形成されたもので、例えば、非接触ICタグ用のICチップを用いる。 IC chip 12, in which a plurality of electrodes are formed on one main surface of an integrated circuit (IC), for example, using an IC chip for non-contact IC tag. この非接触ICタグ用のICチップとは、送受信回路、制御回路、メモリ等を構成する集積回路(IC)が形成された半導体チップであり、ダイポールアンテナあるいはコイル状アンテナと接続することにより、外部の情報機器とデータの送受信が行えるようになっている。 And the IC chip for non-contact IC tag, the transmission and reception circuit, a control circuit, a semiconductor chip having integrated circuits (IC) are formed that constitute a memory or the like, by connecting the dipole antenna or coil antenna, external and able to perform the information device and transmitting and receiving data.
【0018】 [0018]
パシベーション膜13は、ICチップ12の集積回路(IC)及び複数の電極を保護するために設けられたもので、絶縁性を有するものであればとくに限定されないが、例えば、ポリイミド樹脂、エポキシ樹脂、シリコーン樹脂等の合成樹脂が好適に用いられる。 Passivation film 13, provided in order to protect the integrated circuit (IC) and a plurality of electrodes of the IC chip 12 is not particularly limited as long as it has an insulating property, for example, polyimide resin, epoxy resin, synthetic resin such as a silicone resin is preferably used. また、この合成樹脂としては、熱により硬化する熱硬化型樹脂、あるいは紫外線等の光により硬化する光硬化型樹脂が好適である。 Further, as the synthetic resin, thermosetting resin is cured by heat or light curable resin that is cured by light such as ultraviolet rays is preferable.
【0019】 [0019]
このバンプ電極4とダイポールアンテナ2との間には微粒子混入樹脂14が充填されている。 Particulate contamination resin 14 is filled between the bump electrode 4 and the dipole antenna 2.
この微粒子混入樹脂14は、絶縁性を有する液状またはシート状の樹脂を熱あるいは紫外線等の光により硬化させた絶縁性樹脂15中に非導電性微粒子16を混入・分散させたもので、絶縁性樹脂15としては、絶縁性、機械的強度及び耐摩耗性等に優れているエポキシ樹脂、メラミン樹脂、フェノール樹脂、アクリル樹脂、シリコーン樹脂等が好適に用いられ、また、非導電性微粒子16としては、酸化ケイ素、酸化アルミニウム、タルク等のセラミックス微粒子、またはポリイミド、ポリアミド、フッ素樹脂等の絶縁性樹脂15より軟化点温度が高い合成樹脂微粒子が好適に用いられる。 The particulate contamination resin 14, which was then mixed and dispersed non-conductive particles 16 of liquid or sheet-like resin having an insulating property in the insulating resin 15 is cured by light such as heat or UV, insulating as the resin 15, an insulating, epoxy resin is excellent in mechanical strength and wear resistance, melamine resins, phenol resins, acrylic resins, silicone resins and the like are suitably used, and as the non-conductive particles 16 , silicon oxide, aluminum oxide, ceramic fine particles or polyimide, such as talc, polyamides, softening point temperature than the insulating resin 15 such as a fluorine resin is high synthetic resin fine particles are preferably used. これらの微粒子は、粒子径が揃った単分散微粒子が好ましい。 These fine particles are preferably monodisperse particles having a uniform particle size.
【0020】 [0020]
この半導体モジュールでは、バンプ電極4とダイポールアンテナ2との間に、絶縁性樹脂15中に単分散の非導電性微粒子16を混入・分散させた微粒子混入樹脂14を充填したことにより、非導電性微粒子16がスペーサとなってバンプ電極4とダイポールアンテナ2との間の間隔が一定に保持される。 In this semiconductor module, between the bump electrode 4 and the dipole antenna 2, by filling the particulate contamination resin 14 is mixed and dispersed non-conductive particles 16 monodisperse in an insulating resin 15, a non-conductive particles 16 spacing between the bump electrode 4 and the dipole antenna 2 becomes spacer is kept constant. これにより、微粒子混入樹脂14の厚みは非導電性微粒子16の直径により制御され、厚みのバラツキが極めて小さくなり、圧接時の圧力をコントロールする必要も無くなる。 Thus, the thickness of the fine particle mixed resin 14 is controlled by the diameter of the non-conductive particles 16, variation in thickness is extremely small, no need to control the pressure during pressing.
【0021】 [0021]
この微粒子混入樹脂14の厚みは、非導電性微粒子16の直径により概ね決定されるものであるから、特に厚みを制御する必要はないが、非接触ICタグとして用いる場合には、ICチップ12のバンプ電極4とダイポールアンテナ2との間の容量分Cで結合することができる厚みであることが必要である。 The thickness of the fine particles mixed resin 14 because those generally determined by the diameter of the non-conductive particles 16, is not particularly necessary to control the thickness, when used as a non-contact IC tag, the IC chip 12 it is necessary that the thickness that can bind with capacity of C between the bump electrode 4 and the dipole antenna 2.
例えば、2.45GHz帯域の高周波を用いる場合、1μm〜数10μmが好ましい。 For example, when using a high frequency of 2.45GHz band, 1 m to the number of 10μm are preferred. この厚みは面方向に一定であることが好ましい。 It is preferred that the thickness is constant in the plane direction.
【0022】 [0022]
このICチップ12を用いた非接触ICタグの例としては、書籍、CD、DVD等の情報媒体の商品管理に用いられる非接触型のICタグがあり、このICタグをIDカード等に埋め込めば、個人の識別ができるIDカードとして用いることもできる。 Examples of non-contact IC tag using the IC chip 12, books, CD, there are non-contact type IC tag used in the product management of the information medium such as a DVD, by embedding the IC tag on the ID card or the like It can also be used as an ID card that can identify individuals.
【0023】 [0023]
例えば、非接触ICタグ用に用いた場合のダイポールアンテナ2のアンテナ長Lは、高周波の波長をλ、光速をC、高周波の周波数をfとすると、 For example, the antenna length L of the dipole antenna 2 when used for non-contact IC tag, the wavelength of the high frequency lambda, the speed of light C, and the frequency of the high frequency is f,
L=λ/2=C/(2×f) L = λ / 2 = C / (2 × f)
で表される。 In represented.
ここで、光速Cを2.99×10 m、高周波の周波数fを2.45GHz=2.45×10 Hzとすると、 Here, the speed of light C 2.99 × 10 8 m, the high-frequency of the frequency f and 2.45GHz = 2.45 × 10 9 Hz,
となる。 To become. したがって、タグサイズに充分対応することができる。 Therefore, it is possible to cope sufficiently tag size.
【0024】 [0024]
次に、この半導体モジュールの製造方法について説明する。 Next, a method for manufacturing the semiconductor module.
まず、図2(a)に示すように、回路基板1のダイポールアンテナ2上のICチップ12搭載位置に、樹脂21を塗布する。 First, as shown in FIG. 2 (a), the IC chip 12 mounting position on the dipole antenna 2 of the circuit board 1 is coated with a resin 21.
この樹脂21は、絶縁性を有する液状またはシート状の樹脂中に、酸化ケイ素微粒子、合成樹脂微粒子等の非導電性微粒子を混入・分散させたもので、熱あるいは紫外線等の光により硬化し、絶縁性を有する。 The resin 21 is, in a liquid or sheet-like resin having an insulating property, silicon oxide fine particles, in which the non-conductive fine particles such as a synthetic resin fine particles are mixed and dispersed, and cured by light such as heat or ultraviolet light, having an insulating property.
【0025】 [0025]
次いで、ICチップ12のバンプ電極4と、回路基板1のダイポールアンテナ2との位置合わせを行う。 Then, perform the bump electrode 4 of the IC chip 12, the alignment of the dipole antenna 2 of the circuit board 1.
次いで、図2(b)に示すように、ICチップ12に上方から所定の圧力Fを加え、このICチップ12をダイポールアンテナ2に所定の圧力Fで圧接する。 Then, as shown in FIG. 2 (b), a predetermined pressure F applied from above the IC chip 12 is pressed at a predetermined pressure F of the IC chip 12 to the dipole antenna 2.
この状態で、樹脂21に対して熱あるいは紫外線等の光を加える。 In this state, addition of light such as heat or ultraviolet rays resin 21. これにより樹脂21は硬化して絶縁性を有する微粒子混入樹脂14となる。 Thus the resin 21 becomes fine particles mixed resin 14 having an insulating property and curing.
以上により、半導体モジュールを製造することができる。 Thus, it is possible to manufacture the semiconductor module.
【0026】 [0026]
以上説明したように、本実施形態の半導体モジュールによれば、ICチップ12のバンプ電極4と、回路基板1上のダイポールアンテナ2との間に、絶縁性樹脂15中に非導電性微粒子16を混入・分散させた微粒子混入樹脂14を充填したので、回路基板1上のダイポールアンテナ2とICチップ12のバンプ電極4との間隔を一定に保つことができ、発信特性等のバラツキを小さくすることができる。 As described above, according to the semiconductor module of this embodiment, the bump electrode 4 of the IC chip 12, between the dipole antenna 2 on the circuit board 1, the non-conductive particles 16 in the insulating resin 15 having filled the fine particles mixed resin 14 is mixed and dispersed, it is possible to keep a proper distance between the bump electrode 4 of the dipole antenna 2 and the IC chip 12 on the circuit board 1 to be constant, to reduce variations in such outgoing characteristics can. その結果、製品の歩止まりを向上させることができる。 As a result, it is possible to improve the walking blind products.
【0027】 [0027]
また、本実施形態の半導体モジュールの製造方法によれば、回路基板1のダイポールアンテナ2上のICチップ12搭載位置に、非導電性微粒子を混入・分散させた熱硬化型あるいは紫外線等の光硬化型の絶縁性を有する樹脂21を塗布し、ICチップ12のバンプ電極4を樹脂21を介して回路基板1のダイポールアンテナ2に圧接するので、回路基板1上のダイポールアンテナ2とICチップ12のバンプ電極4との間隔が高精度で一定に保持された半導体モジュールを、簡単な工程で、しかも容易に作製することができる。 Further, according to the manufacturing method of the semiconductor module of this embodiment, the IC chip 12 mounting position on the dipole antenna 2 of the circuit board 1, light curing of thermosetting type or ultraviolet rays obtained by mixing and dispersing a non-conductive particles the resin 21 having the type of insulation is applied, the bump electrodes 4 of the IC chip 12 since the pressure in the dipole antenna 2 of the circuit board 1 via the resin 21, the dipole antenna 2 and the IC chip 12 on the circuit board 1 the semiconductor module spacing is held constant at high accuracy between the bump electrode 4, a simple process, yet can be easily manufactured. その結果、発信特性等のバラツキが小さく、製品の歩止まりが向上した半導体モジュールを容易に作製することができる。 As a result, it is possible variations, such as calling characteristics is small and easily manufactured semiconductor module walking blind product is improved.
【0028】 [0028]
また、本実施形態の半導体モジュールを用いて非接触ICタグを作製すれば、発信特性等のバラツキが小さく、製品の歩止まりの高い非接触ICタグを得ることができる。 Further, if making the non-contact IC tag using a semiconductor module of this embodiment, small variations in such outgoing characteristics, it is possible to obtain a highly walking blind products noncontact IC tag.
【0029】 [0029]
【発明の効果】 【Effect of the invention】
以上説明したように、本発明の半導体モジュールによれば、アンテナ部が形成された基板上に、複数の金属突起を有する半導体装置を搭載してなる半導体モジュールであって、前記半導体装置の少なくとも1対の金属突起を、非導電性微粒子を混入してなる樹脂を介して前記アンテナ部に接続したので、基板のアンテナ部と半導体装置の金属突起との間隔を一定に保つことができ、特性のバラツキを小さくすることができる。 As described above, according to the semiconductor module of the present invention, the substrate on which the antenna portion is formed, a semiconductor module formed by mounting a semiconductor device having a plurality of metallic protrusions, at least one of said semiconductor device the pair of metal projections, so connected to the antenna unit via a resin obtained by mixing a non-conductive particles, it is possible to keep a proper distance between metal projection of the antenna portion of the substrate and the semiconductor device constant, characteristic of it is possible to reduce the variation.
また、特性のバラツキが小さいので、信頼性、特に長期間使用時の信頼性を高めることができる。 Further, since the variation in characteristics is small, it is possible to enhance the reliability at the time of reliability, especially long-term use.
【0030】 [0030]
本発明の非接触ICタグによれば、本発明の半導体モジュールを備えたので、発信特性等のバラツキが小さく、製品の歩止まりの高い非接触ICタグを得ることができる。 According to the non-contact IC tag of the present invention, since with a semiconductor module according to the present invention, small variations in such outgoing characteristics, it is possible to obtain a highly walking blind products noncontact IC tag.
【0031】 [0031]
本発明の半導体モジュールの製造方法によれば、基板上のアンテナ部の半導体装置の金属突起との接続領域に、非導電性微粒子を混入してなる樹脂層を形成する工程と、該樹脂層上に前記半導体装置の金属突起を載置し、該半導体装置の金属突起を前記樹脂層を介して前記アンテナ部に圧接する工程とを有するので、基板のアンテナ部と半導体装置の金属突起との間隔が一定に保持され、しかも特性のバラツキの小さい半導体モジュールを、容易に製造することができる。 According to the manufacturing method of the semiconductor module of the present invention, the connection area between the metal projection of the semiconductor device of the antenna portion of the substrate, and forming a resin layer formed by mixing a non-conductive fine particles, the resin layer wherein placing the metal projection of the semiconductor device, since a step of pressing a metal projection of the semiconductor device to the antenna unit through the resin layer, the distance between the metal projection of the antenna portion of the substrate and the semiconductor device There is kept constant, moreover variation small semiconductor module characteristics can be easily produced.
また、バラツキが小さいので、製品の歩留まりが高くなり、信頼性の向上及び製造方法コストの低減を図ることができる。 Further, since the variation is small, the yield of the product becomes high, it is possible to improve the reliability and reduce manufacturing method cost.
【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS
【図1】本発明の一実施形態の半導体モジュールを示す断面図である。 1 is a cross-sectional view showing a semiconductor module according to one embodiment of the present invention.
【図2】本発明の一実施形態の半導体モジュールの製造方法を示す過程図である。 A process diagram showing a manufacturing method of a semiconductor module according to an embodiment of the present invention; FIG.
【図3】従来の半導体モジュールを示す平面図である。 3 is a plan view showing a conventional semiconductor module.
【図4】従来の半導体モジュールを示す断面図である。 4 is a sectional view showing a conventional semiconductor module.
【符号の説明】 DESCRIPTION OF SYMBOLS
1…回路基板、2…ダイポールアンテナ(アンテナ部)、4、11…バンプ電極(金属突起)、12…ICチップ(半導体装置)、13…パシベーション膜(保護・絶縁膜)、13a、13b…開口、14…微粒子混入樹脂、15…絶縁性樹脂、16…非導電性微粒子、21…樹脂。 1 ... circuit board, 2 ... dipole antenna (antenna portion), 4,11 ... bump electrode (metal protrusions) 12 ... IC chip (semiconductor device), 13 ... passivation film (protection and insulating film), 13a, 13b ... opening , 14 ... microparticle contamination resin, 15 ... insulating resin, 16 ... non-conductive particles, 21 ... resin.

Claims (8)

  1. アンテナ部が形成された基板上に、複数の金属突起を有する半導体装置を搭載してなる半導体モジュールであって、 On the substrate on which the antenna portion is formed, a semiconductor module formed by mounting a semiconductor device having a plurality of metallic protrusions,
    前記半導体装置の少なくとも1対の金属突起を、非導電性微粒子を混入してなる樹脂を介して前記アンテナ部に接続してなることを特徴とする半導体モジュール。 The semiconductor module characterized by comprising connecting at least one pair of metal projections, to the antenna unit via a resin obtained by mixing a non-conductive fine particles of the semiconductor device.
  2. 前記1対の金属突起の少なくとも前記アンテナ部との接続領域を除く部分には、絶縁膜が形成されてなることを特徴とする請求項1記載の半導体モジュール。 The 1 in the portion excluding the connection region of at least the antenna portion of the pair of metal protrusions, the semiconductor module according to claim 1, wherein an insulating film is formed.
  3. 前記非導電性微粒子は、セラミックスまたは合成樹脂からなる微粒子であることを特徴とする請求項1または2記載の半導体モジュール。 The non-conductive fine particles, a semiconductor module according to claim 1, wherein that the fine particles of ceramics or synthetic resin.
  4. 前記セラミックスまたは合成樹脂からなる微粒子は、単分散微粒子であることを特徴とする請求項3記載の半導体モジュール。 Microparticles consisting of the ceramic or synthetic resin, the semiconductor module according to claim 3, wherein the monodisperse particles.
  5. 前記半導体装置は、非接触ICタグ用の半導体装置であることを特徴とする請求項1ないし4のいずれか1項記載の半導体モジュール。 The semiconductor device includes a semiconductor module according to any one of claims 1 to 4 characterized in that it is a semiconductor device for non-contact IC tag.
  6. 請求項1ないし5のいずれか1項記載の半導体モジュールを備えてなることを特徴とする非接触ICタグ。 It claims 1 to noncontact IC tag characterized in that it comprises a semiconductor module according to any one of 5.
  7. アンテナ部が形成された基板上に複数の金属突起を有する半導体装置を搭載してなる半導体モジュールの製造方法であって、 On the substrate on which the antenna portion is formed by a method for manufacturing a semiconductor module formed by mounting a semiconductor device having a plurality of metallic protrusions,
    前記基板上のアンテナ部の前記半導体装置の金属突起との接続領域に、非導電性微粒子を混入してなる樹脂層を形成する工程と、 The connection area between the metal protrusion of the semiconductor device of the antenna unit on the substrate, and forming a resin layer formed by mixing a non-conductive particles,
    該樹脂層上に前記半導体装置の金属突起を載置し、該半導体装置の金属突起を前記樹脂層を介して前記アンテナ部に圧接する工程とを有することを特徴とする半導体モジュールの製造方法。 Placing a metal projection of the semiconductor device to the resin layer, a method of manufacturing a semiconductor module, characterized by a step of pressing a metal projection of the semiconductor device to the antenna unit through the resin layer.
  8. 前記半導体装置の金属突起の少なくとも前記アンテナ部との接続領域を除く部分には、絶縁膜が形成されてなることを特徴とする請求項7記載の半導体モジュールの製造方法。 Wherein the portion excluding the connection region of at least the antenna portion of the metal projection of a semiconductor device, a manufacturing method of a semiconductor module according to claim 7, wherein the insulating film is formed.
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