JP2004335927A

JP2004335927A - Method for fabricating electrooptic display

Info

Publication number: JP2004335927A
Application number: JP2003132799A
Authority: JP
Inventors: Hideo Yamanaka; 英雄山中
Original assignee: Sony Corp
Current assignee: Sony Corp
Priority date: 2003-05-12
Filing date: 2003-05-12
Publication date: 2004-11-25

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for fabricating an electrooptic display of an image quality not deteriorating due to electromagnetic impairment waves. <P>SOLUTION: In the method for fabricating an electrooptic display by forming a TFT substrate layer on a glass substrate 1 and then removing the glass substrate by etching, a conductive thin film 4 is formed on the glass substrate through an SiNx film 3, an amorphous silicon thin film 5 is formed on the conductive thin film through an SiO<SB>2</SB>film 2, the amorphous silicon thin film is recrystallized to form the TFT substrate layer of polysilicon or single crystal silicon TFT, and then the glass substrate is removed by etching. Furthermore, it is pasted to a transparent or opaque resin substrate 12 and superposed on a transparent resin counter substrate 13 having a transparent electrode 16 formed on the surface. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明はプラスティック製電気光学表示装置の製造方法に関する。詳しくは、ガラス基板上に電気光学表示素子基板層（以下、ＴＦＴ基板層と称する）を形成した後にガラス基板のエッチング除去を行い、樹脂支持基板に貼り合わせるプラスティック製電気光学表示装置の製造方法に係るものである。
【０００２】
【従来の技術】
近年、基板にガラス材料では無くプラスティックフィルムを用いたプラスティックＬＣＤが薄膜化及び軽量化という観点から注目されているが、プラスティックフィルムの耐熱性が低いために、プロセスの最高温度を低くせざるを得ず、結果的にガラス基板上にＴＦＴを形成する場合と比較すると良好な電気特性のＴＦＴを形成できないという不具合があった。
【０００３】
このような不具合に対して、ガラス基板上にＴＦＴ基板層を形成した後にガラス基板のエッチング除去を行い、ＴＦＴ基板層をプラスティックフィルムに貼り合わせるといったプラスティックＬＣＤの製造方法が提案されている（例えば、特許文献１参照。）。
【０００４】
【特許文献１】
特開２００２−７２９０５号公報（第２−７頁、第１図）
【０００５】
【発明が解決しようとする課題】
ここで、プラスティックＬＣＤは、携帯電話やＰＤＡ等のモバイル機器に採用されることが多いのであるが、電磁波障害による画質劣化を受け難いことが重要となってきている。
【０００６】
本発明は以上の点に鑑みて創案されたものであって、電磁波障害による画質劣化を受け難い高性能、高精細なプラスティック製電気光学表示装置の製造方法を提供することを目的とするものである。
【０００７】
【課題を解決するための手段】
上記の目的を達成するために、本発明に係る電気光学表示装置の製造方法は、ガラス基板上にＴＦＴ基板層を形成した後に、前記ガラス基板のエッチング除去を行う電気光学表示装置の製造方法において、ガラス基板上に第１の絶縁膜を介して導電性薄膜を形成する工程と、該導電性薄膜の上層に第２の絶縁膜を介して低級結晶性半導体薄膜を形成する工程と、該低級結晶性半導体薄膜を再結晶化して多結晶性あるいは単結晶性半導体薄膜を形成する工程と、該多結晶性あるいは単結晶性半導体薄膜に周辺回路と表示部からなるＴＦＴ基板層を形成する工程と、前記ガラス基板のエッチング除去を行う工程と、透明あるいは不透明樹脂支持基板と前記ＴＦＴ基板層を貼り合わせる工程と、該透明あるいは不透明樹脂支持基板が貼り合わせられたＴＦＴ基板層とその表面に透明電極が形成された透明樹脂対向基板を重ね合わせる工程を備える。
【０００８】
また、本発明に係る電気光学表示装置の製造方法は、ガラス基板上にＴＦＴ基板層を形成した後に、前記ガラス基板のエッチング除去を行う電気光学表示装置の製造方法において、ガラス基板上に第１の絶縁膜を介して導電性薄膜を形成する工程と、該導電性薄膜の上層に第２の絶縁膜を介して低級結晶性半導体薄膜を形成する工程と、該低級結晶性半導体薄膜を再結晶化して多結晶性あるいは単結晶性半導体薄膜を形成する工程と、該多結晶性あるいは単結晶性半導体薄膜に周辺回路と表示部からなるＴＦＴ基板層を形成する工程と、前記ガラス基板上に形成されたＴＦＴ基板層とその表面に透明電極が形成された透明樹脂対向基板を重ね合わせる工程と、前記ガラス基板のエッチング除去を行う工程と、前記ＴＦＴ基板層と透明あるいは不透明樹脂支持基板を貼り合わせる工程とを備える。
【０００９】
ここで、ガラス基板上に第１の絶縁膜を介して導電性薄膜を形成することにより、この導電性薄膜と透明樹脂対向基板表面に形成された導電性薄膜である透明電極によって周辺回路及び表示部全体を導電性薄膜で挟み込むことができる。
【００１０】
また、本発明に係る電気光学表示装置の製造方法は、ガラス基板上にＴＦＴ基板層を形成した後に、前記ガラス基板のエッチング除去を行う電気光学表示装置の製造方法において、ガラス基板上に絶縁膜を介して低級結晶性半導体薄膜を形成する工程と、該低級結晶性半導体薄膜を再結晶化して多結晶性あるいは単結晶性半導体薄膜を形成する工程と、該多結晶性あるいは単結晶性半導体薄膜に周辺回路と表示部からなるＴＦＴ基板層を形成する工程と、前記ガラス基板のエッチング除去を行う工程と、その表面に導電性薄膜が形成された透明あるいは不透明樹脂支持基板と前記ＴＦＴ基板層を貼り合わせる工程と、該透明あるいは不透明樹脂支持基板が貼り合わせられたＴＦＴ基板層とその表面に透明電極が形成された透明樹脂対向基板を重ね合わせる工程を備える。
【００１１】
また、本発明に係る電気光学表示装置の製造方法は、ガラス基板上にＴＦＴ基板層を形成した後に、前記ガラス基板のエッチング除去を行う電気光学表示装置の製造方法において、ガラス基板上に絶縁膜を介して低級結晶性半導体薄膜を形成する工程と、該低級結晶性半導体薄膜を再結晶化して多結晶性あるいは単結晶性半導体薄膜を形成する工程と、該多結晶性あるいは単結晶性半導体薄膜に周辺回路と表示部からなるＴＦＴ基板層を形成する工程と、前記ガラス基板上に形成されたＴＦＴ基板層とその表面に透明電極が形成された透明樹脂対向基板を重ね合わせる工程と、前記ガラス基板のエッチング除去を行う工程と、その表面に導電性薄膜が形成された透明あるいは不透明樹脂支持基板と前記ＴＦＴ基板層を貼り合わせる工程とを備える。
【００１２】
ここで、その表面に導電性薄膜が形成された透明あるいは不透明樹脂支持基板とＴＦＴ基板層を貼り合わせることによって、導電性薄膜と透明樹脂対向基板に形成された導電性薄膜である透明電極によって周辺回路及び表示部全体を導電性薄膜で挟み込むことができる。
【００１３】
【発明の実施の形態】
以下、本発明の実施の形態を図面を参照しながら説明し、本発明の理解に供する。
【００１４】
図１及び図２は本発明を適用した電気光学表示装置の製造方法の一例である透過型あるいは半透過型液晶表示装置の製造方法の一例を説明するための模式的な図である。
ここで、透過型あるいは半透過型液晶表示装置の製造方法の一例では、先ず、図１（ａ）で示す様に、ＣＶＤ法、スパッタリング法または蒸着法等によってほうけい酸ガラス、アルミノけい酸ガラスなどの低歪点ガラス基板１全面に２００〜３００ｎｍのＳｉＯ_２膜２、ＳｉＯ_２膜の上層に５０〜１００ｎｍのＳｉＮｘ膜３、ＳｉＮｘ膜の上層に２００〜３００ｎｍのＳｉＯ_２膜、ＳｉＯ_２膜の上層に１００〜２００ｎｍのＩＴＯ（インジウム−錫系透明導電膜）やＩＺＯ（インジウムー酸化亜鉛系透明導電膜）等の透明導電性薄膜４、透明導電性薄膜の上層に１００〜２００ｎｍのＳｉＯ_２膜、ＳｉＯ_２膜の上層にＣＶＤ法により５０ｎｍのアモルファスシリコン薄膜５を形成し、続いて、アモルファスシリコン薄膜を汎用のフォトリソグラフィー技術及びエッチング技術を用いて図１（ｂ）で示す様に、ＴＦＴ、抵抗、容量等の形成に必要な領域以外のアモルファスシリコン薄膜５のエッチングを行う。
なお、触媒ＣＶＤ法によるアモルファスシリコン薄膜、微結晶シリコン含有アモルファスシリコン薄膜、アモルファスシリコン含有微結晶シリコン薄膜などでもよい。
【００１５】
ここで、ガラス基板全面に形成されたＳｉＯ_２膜の上層に形成される薄膜は、絶縁膜として機能すれば充分であり、必ずしもＳｉＮｘ膜である必要は無く、いかなる絶縁膜であっても構わないが、基板側からのハロゲン元素汚染の低減及び後述するフッ酸／硝酸系エッチング液によるガラス基板のエッチングの際にエッチングストッパーとして絶縁膜が機能できる様に、絶縁膜はＳｉＮｘやＳｉＯＮ等の窒化系シリコン膜である方が好ましい。
【００１６】
また、ガラス基板とＳｉＮｘ膜及びＳｉＮｘ膜と透明導電性薄膜との間にＳｉＯ_２膜を形成しているのは、ガラス基板とＳｉＮｘ膜及びＳｉＮｘ膜と透明導電性薄膜との密着性の向上を図るためであり、ガラス基板とＳｉＮｘ膜及びＳｉＮｘ膜と透明導電性薄膜との密着性が充分である場合には必ずしもＳｉＯ_２膜を形成する必要は無い。
尚、必要に応じてアモルファスシリコン薄膜５の上層にＳｉＯ_２膜約５０ｎｍを形成し、アモルファスシリコン薄膜５を多結晶化すべくエキシマレーザーアニールを行う際に、エキシマレーザーの反射低減を図ってもよい。
【００１７】
次に、４５０℃〜５００℃で数十分間加熱し、アモルファスシリコン薄膜５中に含有される水素の加熱脱気を行った後に、アモルファスシリコン薄膜５にフォーカスを合わせた状態でエキシマレーザーアニールを行い、アモルファスシリコン薄膜５を再結晶化して多結晶性シリコン（以後はポリシリコンと称する）薄膜１４を形成する。
【００１８】
次に、このポリシリコン層内に、ＬＣＤの表示素子としてのＴＦＴや配線などを、周辺回路としてのＴＦＴ、ダイオード、抵抗、キャパシタ、コイルや配線等の半導体素子および半導体集積回路のいずれかまたは両方を形成した後に、平坦化膜６を積層すると共に透明画素電極７を形成し、図１（ｃ）で示す様な周辺回路一体型ポリシリコンＴＦＴ基板層を作製する。
【００１９】
尚、同時に周辺回路一体型ポリシリコンＴＦＴ基板層の周辺回路に接続する半田バンプなどの外部取り出し電極（図は省略）を形成するが、ＬＣＤパネル形成後に異方性導電膜接合や超音波接合、半田付けなどでフレキシブル基板との接合やＰＣＢ（ＰｒｉｎｔｅｄＣｉｒｃｕｉｔＢｏａｒｄ）へのマウントするのが好ましい。
ここで、透過型ＬＣＤの場合は、画素開口部のポリシリコン薄膜をエッチングし、透明材料例えば透明樹脂あるいはＳｉＯ_２膜で埋め込み、その表面をＣＭＰなどで研磨して平坦化し、表示用ＴＦＴのドレインに接続した透明画素電極を形成する。一方、半透過型ＬＣＤの場合は、一画素内に反射／透過の二領域を持たせる為に、この反射画素電極の一部をパターニングし、そこに透明画素電極を形成する。例えば、画素開口部のポリシリコン薄膜をエッチングし、透明材料例えば透明樹脂あるいはＳｉＯ_２膜で埋め込み、その表面をＣＭＰなどで研磨して平坦化した画素開口部の一部に汎用リソグラフィ技術により適度な凹凸形状の感光性樹脂膜を形成し、加熱でリフローした後に、表示用ＴＦＴのドレインに接続した高反射率のアルミニウム膜を形成して適度な凹凸形状の反射画素電極を形成し、アルミニウム膜を含む画素開口部に透明画素電極を形成することで一画素内に反射／透過の二領域を持たせた画素電極を形成する。又は、画素開口部に表示用ＴＦＴのドレインに接続したＩＴＯまたはＩＺＯなどの透明画素電極を形成し、透明画素電極の一部に汎用リソグラフィ技術により適度な凹凸形状の感光性樹脂膜を形成し、加熱でリフローした後に、透明画素電極と接続した高反射率のアルミニウム膜を形成して適度な凹凸形状の反射画素電極を形成することで一画素内に反射／透過の二領域を持たせた画素電極を形成する。この透過と反射の画素面積比をコントロールすることにより、透過／反射の光学特性のバランスを取ることができる。この半透過型ＬＣＤの透過表示には透過型ＬＣＤと同様にバックライト光源を用い、反射表示には反射型ＬＣＤと同様に太陽光を用いるのは言うまでもない。そして、半透過型ＬＣＤではより明るい表示のために、反射画素電極を配線やＴＦＴの上などの不透明領域にも覆い被せて開口率を高め、透明画素電極を不透明配線がない部分に配置し、全体の開口率を高くするなどの工夫が必要である。
又、反射型ＬＣＤ及び半透過型ＬＣＤでのペーパーホワイトの見栄えを実現する為に、反射光の正反射成分を減らして光を拡散散乱させる機能として、反射画素電極に形成した凹凸形状の傾斜角度を特定の範囲内に限定し、角度の分布形状を最適化する必要がある。
又、凹凸を規則的に配置すると太陽光下で反射画像に虹色の光干渉が発生し、視認性低下するので、フィボナッチ数列で表される配列を凹凸パターンに適用するなどで凹凸配置をランダム化する必要がある。
【００２０】
次に、図１（ｄ）で示す様に、ＴＦＴ基板層表面に糊残りの少ない帯電防止機能を有する基材８ａ及び粘着剤８ｂから成るＵＶ照射硬化型テープ（以下、ＵＶテープと称する）８を貼り合わせると共に、必要に応じてＵＶテープと保護ガラス基板９を水溶性接着剤１０で貼り合わせる。
【００２１】
ここで、水溶性接着剤としては、ホットメルト系水溶性固形ワックス（例えば、日化精工株式会社のアクアワックス２０／５０／８０（主成分は脂肪酸グリセリド）、アクアワックス５５３／５３１／４４２／ＳＥ（主成分はポリエチレングリコール、ビニルピロリドン共重合物、グリセリンポリエーテル）、ＰＥＧワックス２０（主成分はポリエチレングリコール）等）、または水溶性液状ワックス（例えば、日化精工株式会社の合成樹脂系液状接着剤のアクアリキッドＷＡ−３０２（主成分はポリエチレングリコール、ビニルピロリドン誘導体、メタノール）、ＷＡ−２０５１１／ＱＡ−２０５６６（主成分はポリエチレングリコール、ビニルピロリドン誘導体、ＩＰＡ、水）等）を使用することができる。
【００２２】
なお、水溶性接着剤を保護ガラスのＴＦＴ基板層側表面のみならず、保護ガラスの両面に塗布しているのは、後述するフッ酸／硝酸系エッチング液を用いてのエッチングの際に保護ガラスがエッチングされてしまうのを抑制し、保護ガラスの繰り返し使用を可能とするためである。
【００２３】
続いて、図２（ｅ）で示す様に、ガラス基板とガラス基板表面に形成されたＳｉＯ_２膜とをフッ酸／硝酸系エッチング液を用いてエッチング除去する。
この時に、窒化系シリコン膜が存在し、エッチングストッパー作用をするので、
エッチングムラによる不具合がない。
【００２４】
次に、図２（ｆ）で示す様に、ＵＶ照射硬化型接着剤１１を用いて０．１〜０．５ｍｍの耐熱性及び耐湿性を有するＰＥＴ（ポリエチレンテレフタレート）、ポリオレフィン、アクリルなどの透明樹脂支持基板１２に貼り合わせた後に、５０℃〜６０℃の温純水洗浄を行って保護ガラス基板を剥離すると共に、ＵＶ照射硬化を行いＵＶテープの剥離を行う。
【００２５】
続いて、図２（ｇ）で示す様に、有機系または無機系の配向膜（１）１３を形成し、配向処理を施す。
ここで、配向膜（１）としてポリイミド等のラビング用有機配向膜またはノンラビング用光有機配向膜を用いる場合には、ロールコーティングやスピンコーティングで塗布を行った後に、後述する対向基板のラビング方向と４５°または９０°の方向にラビング、または後述する対向基板の偏光ＵＶ照射配向方向に対して４５°または９０°の方向にＴＦＴ基板層に対して斜め方向から偏光ＵＶ照射して配向処理を施す。また、配向膜（１）として無機配向膜を用いる場合には、ＴＦＴ基板層あるいは対向基板に対して最適化された例えば６０°の斜目方向にＳｉＯ斜方蒸着することによって配向処理を施したり、ＤＬＣ膜の最適化された斜方蒸着及びイオンブローすることによって配向処理を施したりする。
【００２６】
次に、０．１〜０．５ｍｍの耐熱性及び耐湿性を有するＰＥＴ（ポリエチレンテレフタレート）、ポリオレフィン、アクリルなどの透明樹脂基板１５にＩＴＯやＩＺＯ等の透明電極１６を形成すると共に有機系または無機系の配向膜（２）１７を形成し、配向処理を施した透明樹脂対向基板１８とシール剤１９を用いて重ね合わせる。なお、重ね合わせの際には、必要に応じてミクロパール等のスペーサー２０を散布することによってＴＦＴ基板層と透明樹脂対向基板との液晶間隙の調整を行う。
ここで、配向膜（２）としてポリイミド等のラビング用有機配向膜またはノンラビング用光有機配向膜を用いる場合には、ロールコーティングやスピンコーティングで塗布を行った後にラビング、または基板に対して最適化された斜目方向から偏光ＵＶ照射して配向処理を施す。また、配向膜（２）として無機配向膜を用いる場合には、対向基板に対して最適化された斜目方向からＳｉＯ斜方蒸着することによって配向処理を施したり、最適化されたＤＬＣ膜の斜方蒸着及びイオンブローすることによって配向処理を施したりする。
【００２７】
続いて、個々のＬＣＤパネルとなる様に図２（ｈ）中符号Ａで示す個所より切断を行った後に、シール剤で囲まれた領域に液晶の注入封止を行うことによって透過型あるいは半透過型液晶表示装置を得ることができる。
【００２８】
図３及び図４は本発明を適用した電気光学表示装置の製造方法の他の一例である透過型あるいは半透過型液晶表示装置の製造方法の他の一例を説明するための模式的な図である。
ここで、透過型あるいは半透過型液晶表示装置の製造方法の他の一例では、先ず、図３（ａ）で示す様に、ＣＶＤ法、スパッタリング法または蒸着法等によって低歪み点ガラス基板全面に２００〜３００ｎｍのＳｉＯ_２膜、ＳｉＯ_２膜の上層に５０〜１００ｎｍのＳｉＮｘ膜、ＳｉＮｘ膜の上層に２００〜３００ｎｍのＳｉＯ_２膜、ＳｉＯ_２膜の上層にＣＶＤ法により５０ｎｍのアモルファスシリコン薄膜を形成し、続いて、上記した透過型あるいは半透過型液晶表示装置の製造方法の一例と同様に、アモルファスシリコン薄膜を汎用のフォトリソグラフィー技術及びエッチング技術を用いて図３（ｂ）で示す様に、ＴＦＴ、抵抗、容量等の形成に必要な領域以外のアモルファスシリコン薄膜のエッチングを行う。
なお、触媒ＣＶＤ法によるアモルファスシリコン薄膜、微結晶シリコン含有アモルファスシリコン薄膜、アモルファス含有微結晶シリコン薄膜などでもよい。
【００２９】
ここで、基板側からのハロゲン元素汚染の低減及びフッ酸系エッチング液によるガラス基板のエッチングの際に、エッチングストッパーとして絶縁膜が機能できる様に、絶縁膜は窒化系シリコン膜である方が好ましい点及びガラス基板とＳｉＮｘ膜との密着性が充分である場合には必ずしもＳｉＯ_２膜を形成する必要が無い点は、上記した透過型あるいは半透過型液晶表示装置の製造方法の一例と同様である。
【００３０】
続いて、上記した透過型あるいは半透過型液晶表示装置の製造方法の一例と同様の方法で図３（ｃ）で示す様な周辺回路一体型ポリシリコンＴＦＴ基板を形成する。更に、図３（ｄ）で示す様に、ＴＦＴ基板層表面にＵＶテープを貼り合わせると共に、必要に応じてＵＶテープと保護ガラス基板を水溶性接着剤で貼り合わせた後、図４（ｅ）で示す様に、ガラス基板とガラス基板表面に形成されたＳｉＯ_２膜とをフッ酸／硝酸エッチング液を用いてエッチング除去する。
【００３１】
次に、図４（ｆ）で示す様に、ＵＶ照射硬化型接着剤を用いて、その表面に１００〜２００ｎｍのＩＴＯやＩＸＯ等の透明導電性薄膜が形成された０．１〜０．５ｍｍの耐熱性及び耐湿性を有するＰＥＴ（ポリエチレンテレフタレート）、ポリオレフィン、アクリルなどの透明樹脂支持基板に貼り合わせた後に、上記した透過型あるいは半透過型液晶表示装置の製造方法の一例と同様に、５０℃〜６０℃の温純水洗浄を行って保護ガラス基板を剥離すると共に、ＵＶ照射硬化を行いＵＶテープの剥離を行う。また、図４（ｇ）で示す様に、有機系または無機系の配向膜（１）を形成し、配向処理を施す。
【００３２】
その後、上記した透過型あるいは半透過型液晶表示装置の製造方法の一例と同様に、透明電極、有機系あるいは無機系の配向膜（２）を形成し、配向処理を施した０．１〜０．５ｍｍの耐熱性及び耐湿性を有するＰＥＴ（ポリエチレンテレフタレート）、ポリオレフィン、アクリルなどの透明樹脂対向基板とシール剤を用いて重ね合わせた後に、図４（ｈ）中符号Ｂで示す個所より切断を行い、液晶の注入封止を行うことによって透過型あるいは半透過型液晶表示装置を得ることができる。なお、重ね合わせの際には、必要に応じてミクロパール等のスペーサーを散布することによってＴＦＴ基板層と透明樹脂対向基板との液晶間隙の調整を行う点は上記した透過型あるいは半透過型液晶表示装置の製造方法の一例を同様である。
【００３３】
なお、上記した本発明を適用した透過型あるいは半透過型液晶表示装置の製造方法では、ガラス基板をエッチング除去し、透明樹脂支持基板に貼り合わせた後に透明樹脂対向基板を重ね合わせて切断し、液晶注入封止を行っている。
これに対して、ガラス基板をエッチング除去する前に透明樹脂対向基板を重ね合わせ、その後にガラス基板のエッチング除去を行い、透明樹脂支持基板に貼り合わせて切断し、液晶注入封止を行っても良い。
更に、この時に、ガラス基板をエッチング除去する前に良品のＴＦＴチップに良品の透明樹脂対向基板チップを重ね合わせて液晶注入封止し、その後にガラス基板のエッチング除去を行い、透明樹脂支持基板に貼り合わせて切断してもよい。
更に、この時に、ガラス基板をエッチング除去する前に良品のＴＦＴチップに良品の透明樹脂対向基板チップを重ね合わせて液晶注入封止し、その後にガラス基板のエッチング除去を行い、良品のＴＦＴチップに良品の透明樹脂支持基板チップを貼り合せて切断してもよい。
【００３４】
図５及び図６は本発明を適用した電気光学表示装置の製造方法の更に他の一例である反射型液晶表示装置の製造方法の一例を説明するための模式的な図である。
ここで、反射型液晶表示装置の製造方法の一例では、先ず、図５（ａ）で示す様に、ＣＶＤ法、スパッタリング法または蒸着法等によって低歪点ガラス基板全面に２００〜３００ｎｍのＳｉＯ_２膜、ＳｉＯ_２膜の上層に５０〜１００ｎｍのＳｉＮｘ膜、ＳｉＮｘ膜の上層に２００〜３００ｎｍのＳｉＯ_２膜、ＳｉＯ_２膜の上層に１００〜２００ｎｍの金属薄膜例えばアルミニウム膜２１、アルミニウム膜の上層に１００〜２００ｎｍのＳｉＯ_２膜、ＳｉＯ_２膜の上層にＣＶＤ法により５０ｎｍのアモルファスシリコン薄膜を形成し、続いて、上記した透過型あるいは半透過型液晶表示装置の製造方法の一例及び透過型あるいは半透過型液晶表示装置の製造方法の他の一例と同様に、アモルファスシリコン薄膜を汎用のフォトリソグラフィー技術及びエッチング技術を用いて図５（ｂ）で示す様に、ＴＦＴ、抵抗、容量等の形成に必要な領域以外のアモルファスシリコン薄膜のエッチングを行う。
なお、触媒ＣＶＤ法によるアモルファスシリコン薄膜、微結晶シリコン含有アモルファスシリコン薄膜、アモルファスシリコン含有微結晶シリコン薄膜などでもよい。
【００３５】
ここで、ＳｉＯ_２膜の上層に形成される導電性薄膜はいかなる金属薄膜であっても良く、必ずしもアルミニウム膜である必要は無く、アルミニウムーシリコン合金、ニッケル、クロム、銅、銀、銀合金でもよい。
但し、エキシマレーザー、フラッシュランプアニール等の再結晶化させる入射光を反射あるいは吸収する場合は、再結晶化に必要な入射エネルギーの最適化が必要である。
また、基板側からのハロゲン元素汚染の低減及びフッ酸／硝酸系エッチング液によるガラス基板のエッチングの際に、エッチングストッパーとして絶縁膜が機能できる様に、絶縁膜は窒化系シリコン膜である方が好ましい点、及びガラス基板とＳｉＮｘ膜及びＳｉＮｘ膜と金属薄膜との密着性が充分である場合には必ずしもＳｉＯ_２膜を形成する必要が無い点は、上記した透過型あるいは半透過型液晶表示装置の製造方法の一例及び透過型あるいは半透過型液晶表示装置の製造方法の他の一例と同様である。
【００３６】
続いて、上記した透過型あるいは半透過型液晶表示装置の製造方法の一例及び透過型あるいは半透過型液晶表示装置の製造方法の他の一例と同様の方法で図５（ｃ）で示す様な周辺回路一体型のポリシリコンＴＦＴ基板を形成するが、反射型ＬＣＤの画素表示部のアルミニウム、アルミニウムーシリコン合金、銀、銀合金などの反射電極は、直視用の場合は適度な光の散乱効果を与え表示の見易さを改善する為にこの電極に適当な凹凸形状を設けておくが、プロジェクタ用の場合は高平坦性の電極形状とするのが好ましい。
【００３７】
次に、図５（ｄ）で示す様に、透明電極、有機系あるいは無機系の配向膜（２）を形成し、配向処理を施した透明樹脂対向基板とシール剤を用いて重ね合わせる。なお、重ね合わせの際には、必要に応じてミクロパール等のスペーサーを散布することによってＴＦＴ基板層と透明樹脂対向基板との液晶間隙の調整を行う点は上記した透過型あるいは半透過型液晶表示装置の製造方法の一例及び透過型あるいは半透過型液晶表示装置の製造方法の他の一例と同様である。
【００３８】
次に、透明樹脂対向基板をレーザーや超硬カッター等で切断し、単個のＬＣＤパネルにし、シール剤で囲まれた領域に液晶の注入封止を行うことによって図５（ｅ）で示す様なＬＣＤを形成する。
【００３９】
続いて、図６（ｆ）で示す様に、透明樹脂対向基板表面にＵＶテープを貼り合わせると共に、ＵＶテープと保護ガラス基板を水溶性接着剤で貼り合わせた後に、図６（ｇ）で示す様に、ガラス基板とガラス基板表面に形成されたＳｉＯ_２膜とをフッ酸／硝酸系エッチング液を用いてエッチング除去する。
【００４０】
ここで、透明樹脂対向基板表面にＵＶテープを貼り合わせているのは、後述する洗浄の際のシール剤への影響を除くためであり、洗浄の際にシール剤への影響を考慮する必要が無い場合には、透明樹脂対向基板表面に直接保護ガラス基板を水溶性接着剤で貼り合わせても構わない。
【００４１】
その後、図６（ｈ）で示す様に、ＵＶ照射硬化型接着剤を用いて透明樹脂支持基板を貼り合わせた後に、５０℃〜６０℃の温純水洗浄を行って保護ガラス基板を剥離すると共に、ＵＶ照射硬化を行いＵＶテープの剥離を行い、個々のＬＣＤパネルとなる様に図６（ｉ）中符号Ｃで示す個所より透明樹脂支持基板、ＳｉＯ_２膜、ＳｉＮｘ膜、アルミニウム膜などをレーザーや超硬カッター等で切断することによって反射型液晶表示装置を得ることができる。
尚、前記同様に、この時に不透明樹脂支持基板の場合は低温硬化型接着剤で貼り合わせる。
【００４２】
図７及び図８は本発明を適用した電気光学表示装置の製造方法のまた更に他の一例である反射型液晶表示装置の製造方法の他の一例を説明するための模式的な図である。
ここで、反射型液晶表示装置の製造方法の他の一例では、先ず、図７（ａ）で示す様に、ＣＶＤ法、スパッタリング法または蒸着法等によって低歪点ガラス基板の全面に２００〜３００ｎｍのＳｉＯ_２膜、ＳｉＯ_２膜の上層に５０〜１００ｎｍのＳｉＮｘ膜、ＳｉＮｘ膜の上層に２００〜３００ｎｍのＳｉＯ_２膜、ＳｉＯ_２膜の上層にＣＶＤ法により５０ｎｍのアモルファスシリコン薄膜を形成し、続いて、上記した反射型液晶表示装置の製造方法の一例と同様に、アモルファスシリコン薄膜を汎用のフォトリソグラフィー技術及びエッチング技術を用いて図７（ｂ）で示す様に、ＴＦＴ、抵抗、容量等の形成に必要な領域以外のアモルファスシリコン薄膜のエッチングを行う。
なお、触媒ＣＶＤ法によるアモルファスシリコン薄膜、微結晶シリコン含有アモルファスシリコン薄膜、アモルファスシリコン含有微結晶シリコン薄膜などでもよい。
【００４３】
ここで、基板側からのハロゲン元素汚染の低減及びフッ酸／硝酸系エッチング液によるガラス基板のエッチングの際に、エッチングストッパーとして絶縁膜が機能できる様に絶縁膜は窒化系シリコン膜である方が好ましい点、及びガラス基板とＳｉＮｘ膜との密着性が充分である場合には必ずしもＳｉＯ_２膜を形成する必要が無い点は、上記した反射型液晶表示装置の製造方法の一例と同様である。
【００４４】
続いて、上記した反射型液晶表示装置の製造方法の一例と同様の方法で図７（ｃ）で示す様な周辺回路一体型ポリシリコンＴＦＴ基板を形成した後に、図７（ｄ）で示す様に、透明電極、有機系あるいは無機系の配向膜（２）を形成し、配向処理を施した透明樹脂対向基板とシール剤を用いて重ね合わせる。なお、重ね合わせの際には、必要に応じてミクロパール等のスペーサーを散布することによってＴＦＴ基板層と透明樹脂対向基板との液晶間隙の調整を行う点は上記した反射型液晶表示装置の製造方法の一例と同様である。
【００４５】
次に、透明樹脂対向基板をレーザーや超硬カッター等で切断し、単個のＬＣＤパネルにし、シール剤で囲まれた領域に液晶の注入封止を行うことによって図７（ｅ）で示す様なＬＣＤを形成する。更に、図８（ｆ）で示す様に、透明樹脂対向基板表面にＵＶテープを貼り合わせると共に、ＵＶテープと保護ガラス基板を水溶性接着剤で貼り合わせた後に、図８（ｇ）で示す様に、ガラス基板とガラス基板表面に形成されたＳｉＯ_２膜とをフッ酸／硝酸系エッチング液を用いてエッチング除去する。
【００４６】
その後、図８（ｈ）で示す様に、低温硬化型接着剤２８を用いて、その表面に金属薄膜例えばアルミニウム膜が形成された樹脂支持基板に貼り合わせた後に、上記した反射型液晶表示装置の製造方法の一例と同様に、５０℃〜６０℃の温純水洗浄を行って保護ガラス基板を剥離すると共に、ＵＶ照射硬化を行いＵＶテープの剥離を行い、個々のＬＣＤパネルとなる様に図８（ｉ）中符号Ｄで示す個所より樹脂支持基板、ＳｉＯ_２膜、ＳｉＮｘ膜、アルミニウム膜などをレーザーや超硬カッターで切断することによって反射型液晶表示装置を得ることができる。
【００４７】
なお、上記した本発明を適用した反射型液晶表示装置の製造方法は、ガラス基板をエッチング除去する前に透明樹脂対向基板を重ね合わせ、その後にガラス基板のエッチング除去を行い、樹脂支持基板に貼り合わせて切断し、液晶注入封止を行っているが、ガラス基板をエッチング除去し、樹脂支持基板に貼り合わせた後に透明樹脂対向基板を重ね合わせて切断し、液晶注入封止を行ってもよい。
更に、この時に、ガラス基板をエッチング除去する前に良品のＴＦＴチップに良品の透明樹脂対向基板チップを重ね合わせて液晶注入封止し、その後にガラス基板のエッチング除去を行い、透明樹脂支持基板に貼り合わせて切断してもよい。
更に、この時に、ガラス基板をエッチング除去する前に良品のＴＦＴチップに良品の透明樹脂対向基板チップを重ね合わせて液晶注入封止し、その後にガラス基板のエッチング除去を行い、良品のＴＦＴチップに良品の透明樹脂支持基板チップを貼り合せて切断してもよい。
【００４８】
なお、上記では、エキシマレーザーアニールを行ってアモルファスシリコン薄膜をポリシリコン薄膜化する例を挙げて説明を行ったが、特開２００２−２５２１７４号公報に記載のフラッシュランプアニールや特開２００２−３５１６２８号公報に記載の光高調波変調レーザーアニール、更には特開２００２−２４６３１０号公報に記載の集光ランプアニール等によってポリシリコン膜あるいは単結晶シリコン膜形成しても良く、また、触媒ＣＶＤ法による特開２０００−６８５１４号公報に記載のグラフォエピタキシャル成長や特開２０００−８９２４９号公報に記載のヘテロエピタキシャル成長によって単結晶性シリコン膜を形成しても良い。
【００４９】
ここで、図９に示す様な、グラフォエピタキシャル成長による単結晶性シリコン薄膜の形成方法は、先ず、ガラス基板１全面にＳｉＯ_２／ＳｉＮｘ／ＩＴＯ／ＳｉＮｘ／ＳｉＯ_２から成る積層膜（１）２２を形成し、積層膜（１）の最上層ＳｉＯ２膜にＴＦＴ、Ｄｉ、抵抗、容量等の領域の凹段差２３を形成する。また、全面に低級結晶性半導体薄膜例えばアモルファスシリコン薄膜とキャップ用絶縁膜ＳｉＯ_２を形成し、Ｘｅフラッシュランプアニール、または光高調波変調レーザーアニール、またはＣＷ紫外線ランプアニールなどでアモルファスシリコン薄膜を溶融させ冷却する時に、凹段差の底辺の角をシードにグラフォエピタキシャル成長によって単結晶性シリコン薄膜を形成する。なお、含有水素を脱気するために、４５０℃〜５００℃の加熱前処理を行う。
形成した単結晶性シリコン薄膜に、ＴＦＴ、ダイオード、抵抗、容量等を形成し、周辺回路一体型単結晶シリコンＴＦＴ基板層を形成する。
これ以降のプロセスは、前記の周辺回路一体型ポリシリコンＴＦＴ基板の実施例に準ずる。
【００５０】
また、図１０で示す様な、ヘテロエピタキシャル成長による単結晶性シリコン薄膜の形成方法は、ガラス基板１全面にＳｉＯ_２／ＳｉＮｘ／ＩＴＯ／ＳｉＮｘ／ＳｉＯ_２から成る積層膜（１）を形成し、触媒ＣＶＤ法、或いはＥＣＲ、ＩＣＰ、ヘリコン波等の高密度プラズマＣＶＤ法、レーザーＣＶＤ法などにより全面に結晶性サファイア薄膜２４を形成する。また、低級結晶性半導体薄膜例えばアモルファスシリコン薄膜とキャップ用絶縁膜ＳｉＯ_２を形成し、ＴＦＴ、Ｄｉ，抵抗、容量領域を形成する。その後、Ｘｅフラッシュランプアニール、または光高調波変調レーザーアニール、またはＣＷ紫外線ランプアニールでアモルファスシリコン薄膜を溶融させ徐冷却する時に、結晶性サファイア薄膜をシードにヘテロエピタキシャル成長により単結晶性シリコン薄膜を形成する。なお、含有水素を脱気するために、４５０℃〜５００℃の加熱前処理を行う。
形成した単結晶性シリコン薄膜に、ＴＦＴ、ダイオード、抵抗、容量等を形成し、周辺回路一体型単結晶シリコンＴＦＴ基板層を形成する。
これ以降のプロセスは、前記の周辺回路一体型ポリシリコンＴＦＴ基板の実施例に準ずる。
【００５１】
なお、上記では、本発明を適用した電気光学表示装置の製造方法として透過型あるいは半透過型液晶表示装置の製造方法及び反射型液晶表示装置の製造方法を例に挙げて説明を行っているが、電気光学表示装置としては透過型あるいは半透過型液晶表示装置や反射型液晶表示装置に限定されることは無く、有機ＥＬ（ＥｌｅｃｔｒｏｎｉｃＬｕｍｉｎｅｓｃｅｎｔ）等であっても構わないのは勿論である。
【００５２】
有機ＥＬには上面発光型と下面発光型の２種類がある。
有機ＥＬ層には、単層型、二層型、三層型があるが、低分子化合物の三層型を示すとその構造は、陽極／ホール輸送層／発光層／電子輸送層／陰極、または、陽極／ホール輸送性発光層／キャリアブロック層／電子輸送性発光層／陰極となる。
例えば、上面発光型有機ＥＬの電気光学表示素子基板の表示部は、各画素毎の電流駆動用ＴＦＴのドレインに接続されたＬｉ−ＡＬやＭｇ−Ａｇなどの陰極（金属電極）上に、各画素毎に赤、青、緑などの有機ＥＬ発光層が被着され、その上部にＩＴＯ膜などの陽極（透明電極）が形成され（必要に応じて全面に陽極が形成される。）、全面を耐湿性透明樹脂で覆っている構造となっている。
上面発光型有機ＥＬの場合は、表示用ＴＦＴのドレインに接続されたＬｉ−ＡＬやＭｇ−Ａｇなどの陰極を画素表示部に形成する。このとき、陰極が電流駆動用ＭＯＳＴＦＴ上を覆っている場合は発光面積が大きくなり、陰極が遮光膜となるため、自発光光等がＭＯＳＴＦＴに入射しない。そのため、リーク電流発生がなく、ＴＦＴ特性悪化が避けられる。
例えば図１１で示す様な上面発光型有機ＥＬ基板層の形成方法は、ガラス基板１全面に絶縁膜／導電性膜／絶縁膜から成る積層膜（２）２５を形成し、ポリシリコンＴＦＴ或いは単結晶性シリコンＴＦＴのドレインに接続されたＬｉ−ＡＬやＭｇ−Ａｇなどの陰極（金属電極）上に、各画素毎に赤、青、緑などの有機ＥＬ発光層が被着され、その上部にＩＴＯ膜などの陽極（透明電極）が形成された（必要に応じて全面に陽極が形成される）有機ＥＬ層２６の全面に耐湿性透明樹脂保護膜２７を形成することによって有機ＥＬ基板層を形成する。
その後に、表面にＵＶテープを貼り合せ、必要に応じてその上に支持基板を水溶性接着剤で貼り合せ、ガラス基板をフッ酸／硝酸系エッチング液でエッチングし、有機ＥＬ基板層に接着剤で樹脂支持基板を貼り合せ、切断してプラスティック有機ＥＬパネルを形成する。
【００５３】
一方、下面発光型有機ＥＬの電気光学表示素子基板の表示部は、各画素毎の電流駆動用ＴＦＴのソースに接続されたＩＴＯ膜などの陽極（透明電極）上に、各画素毎に赤、青、緑などの有機ＥＬ発光層が被着され、その上部にＬｉ−ＡＬやＭｇ−Ａｇなどの陰極（金属電極）が形成され（必要に応じて全面に陰極が形成される。）、さらに全面を耐湿性透明樹脂２１で覆っている構造となっている。この密封により、外部からの湿気浸入が防止でき、湿気に弱い有機ＥＬ発光層の劣化や電極酸化を防止し、長寿命、高品質、高信頼性が可能となる。
例えば図１１で示す様な下面発光型有機ＥＬ基板層の形成方法は、ガラス基板１全面に絶縁膜／導電性膜／絶縁膜から成る積層膜（２）２５を形成し、ポリシリコンＴＦＴ或いは単結晶性シリコンＴＦＴのソースに接続されたＩＴＯ膜などの陽極（透明電極）上に、各画素毎に赤、青、緑などの有機ＥＬ発光層が被着され、その上部にＬｉ−ＡＬやＭｇ−Ａｇなどの陰極（金属電極）が形成された（必要に応じて全面に陰極が形成される。）有機ＥＬ層２６及び耐湿性透明樹脂保護膜２７を形成することによって有機ＥＬ基板層を形成する。
その後に、表面にＵＶテープを貼り合せ、必要に応じてその上に支持基板を水溶性接着剤で貼り合せ、ガラス基板をフッ酸／硝酸系エッチング液でエッチングし、有機ＥＬ基板層に透明接着剤で透明樹脂支持基板を貼り合せ、切断してプラスティック有機ＥＬパネルを形成する。
尚、上記ではシリコン系半導体薄膜の実施例を述べたが、ＧａＡｓ，ＳｉＣなどの化合物半導体系薄膜でもよいことは言うまでもない。
【００５４】
【発明の効果】
上記した本発明を適用した電気光学表示装置の製造方法では、ＴＦＴ基板層下全面に導電性薄膜を形成すると共に、透明樹脂対向基板に透明電極を形成することによって、周辺回路及び表示部全体が導電性膜に挟まれ、外部からの静電気ダメージや電磁波障害に強い電気光学表示装置を得ることができる。
【００５５】
また、窒化系シリコン膜がフッ酸／硝酸系エッチング液によるガラスエッチングストッパー作用をもたらすために、ガラスエッチングによるダメージを抑制でき、歩留、品質及び生産性の向上が期待できる。
【００５６】
更に、糊残りの少ない帯電防止機能を有するＵＶ照射硬化型テープで表面を保護した状態でガラス基板のエッチング除去を行うために、ガラスエッチングの際の静電気ダメージを抑制することができる。
【００５７】
また、ガラス基板がエッチングによって除去されたとしても、ＵＶテープ或いは支持基板で保持しているために、割れ、欠け、クラック等を抑制することができ、歩留、品質及び生産性の向上が期待できる。更に、ＵＶ照射により接着力を弱めた後に剥離を行うために、剥離の際の割れ、欠け、クラック等を抑制することができ、歩留、品質及び生産性の向上が期待できる。
【００５８】
また、軽量、薄型、小型、安価、静電気ダメージや電磁波障害に強い高性能、高精細、高輝度のポリシリコンＴＦＴ或いは単結晶シリコンＴＦＴ基板層を貼り合せた樹脂支持基板と、透明樹脂対向基板から構成されるプラスティックＬＣＤ或いはプラスティック有機ＥＬなどのプラスティック電気光学表示装置が実現する。
【図面の簡単な説明】
【図１】本発明を適用した電気光学表示装置の製造方法の一例である透過型あるいは半透過型液晶表示装置の製造方法の一例を説明するための模式的な図（１）である。
【図２】本発明を適用した電気光学表示装置の製造方法の一例である透過型あるいは半透過型液晶表示装置の製造方法の一例を説明するための模式的な図（２）である。
【図３】本発明を適用した電気光学表示装置の製造方法の他の一例である透過型あるいは半透過型液晶表示装置の製造方法の他の一例を説明するための模式的な図（１）である。
【図４】本発明を適用した電気光学表示装置の製造方法の他の一例である透過型あるいは半透過型液晶表示装置の製造方法の他の一例を説明するための模式的な図（２）である。
【図５】本発明を適用した電気光学表示装置の製造方法の更に他の一例である反射型液晶表示装置の製造方法の一例を説明するための模式的な図（１）である。
【図６】本発明を適用した電気光学表示装置の製造方法の更に他の一例である反射型液晶表示装置の製造方法の一例を説明するための模式的な図（２）である。
【図７】本発明を適用した電気光学表示装置の製造方法のまた更に他の一例である反射型液晶表示装置の製造方法の他の一例を説明するための模式的な図（１）である。
【図８】本発明を適用した電気光学表示装置の製造方法のまた更に他の一例である反射型液晶表示装置の製造方法の他の一例を説明するための模式的な図（２）である。
【図９】グラフォエピタキシャル成長による単結晶性シリコン膜を説明するための模式的な図である。
【図１０】ヘテロエピタキシャル成長による単結晶性シリコン膜を説明するための模式的な図である。
【図１１】有機ＥＬ基板層を説明するための模式的な図である。
【符号の説明】
１ガラス基板
２ＳｉＯ_２膜
３ＳｉＮｘ膜
４透明導電性薄膜
５アモルファスシリコン薄膜
６平坦化膜
７透明画素電極
８ＵＶテープ
９保護ガラス基板
１０水溶性接着剤
１１ＵＶ照射硬化型接着剤
１２透明樹脂支持基板
１３配向膜（１）
１５透明樹脂基板
１６透明電極
１７配向膜（２）
１８透明樹脂対向基板
１９シール剤
２０スペーサー
２１アルミニウム膜
２２積層膜（１）
２３凹段差
２４結晶性サファイア薄膜
２５積層膜（２）
２６有機ＥＬ層
２７耐湿性透明樹脂保護膜
２８低温硬化型接着剤[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for manufacturing a plastic electro-optical display device. More specifically, a method of manufacturing a plastic electro-optical display device in which an electro-optical display element substrate layer (hereinafter, referred to as a TFT substrate layer) is formed on a glass substrate, and then the glass substrate is removed by etching and bonded to a resin support substrate. It is related.
[0002]
[Prior art]
In recent years, a plastic LCD using a plastic film instead of a glass material for the substrate has attracted attention from the viewpoint of thinning and weight reduction. However, since the heat resistance of the plastic film is low, the maximum process temperature must be reduced. As a result, there is a problem that a TFT having better electric characteristics cannot be formed as compared with the case where a TFT is formed on a glass substrate.
[0003]
With respect to such a problem, a method of manufacturing a plastic LCD has been proposed in which a TFT substrate layer is formed on a glass substrate, then the glass substrate is removed by etching, and the TFT substrate layer is bonded to a plastic film (for example, See Patent Document 1.).
[0004]
[Patent Document 1]
JP 2002-72905 A (Page 2-7, FIG. 1)
[0005]
[Problems to be solved by the invention]
Here, the plastic LCD is often used for mobile devices such as a mobile phone and a PDA, but it is important that the plastic LCD is less susceptible to image quality deterioration due to electromagnetic interference.
[0006]
The present invention has been made in view of the above points, and an object of the present invention is to provide a method for manufacturing a high-performance, high-definition plastic electro-optical display device that is not easily affected by image quality deterioration due to electromagnetic interference. is there.
[0007]
[Means for Solving the Problems]
In order to achieve the above object, a method of manufacturing an electro-optical display device according to the present invention includes the steps of: forming a TFT substrate layer on a glass substrate; and etching and removing the glass substrate. Forming a conductive thin film on a glass substrate via a first insulating film, forming a lower crystalline semiconductor thin film on the conductive thin film via a second insulating film, Recrystallizing the crystalline semiconductor thin film to form a polycrystalline or single crystalline semiconductor thin film; and forming a TFT substrate layer comprising a peripheral circuit and a display portion on the polycrystalline or single crystalline semiconductor thin film. A step of performing etching removal of the glass substrate, a step of bonding a transparent or opaque resin support substrate and the TFT substrate layer, and a step of bonding the transparent or opaque resin support substrate. Comprising the step of superimposing a transparent resin counter substrate transparent electrode and the surface of the TFT substrate layer is formed.
[0008]
Further, according to the method of manufacturing an electro-optical display device according to the present invention, in the method of manufacturing an electro-optical display device in which a TFT substrate layer is formed on a glass substrate and then the glass substrate is removed by etching, Forming a conductive thin film via an insulating film of the above, forming a lower crystalline semiconductor thin film on the conductive thin film via a second insulating film, and recrystallizing the lower crystalline semiconductor thin film. Forming a polycrystalline or monocrystalline semiconductor thin film, forming a TFT substrate layer comprising a peripheral circuit and a display portion on the polycrystalline or monocrystalline semiconductor thin film, and forming the thin film on the glass substrate. Laminating a TFT substrate layer and a transparent resin facing substrate having a transparent electrode formed on the surface thereof, etching the glass substrate, and removing the TFT substrate layer from the transparent or transparent substrate. And a step of bonding a transparent resin support substrate.
[0009]
Here, by forming a conductive thin film on the glass substrate via the first insulating film, the peripheral circuit and the display are formed by the conductive thin film and the transparent electrode which is the conductive thin film formed on the surface of the transparent resin facing substrate. The entire part can be sandwiched between conductive thin films.
[0010]
Further, according to a method of manufacturing an electro-optical display device according to the present invention, the method of manufacturing an electro-optical display device in which a TFT substrate layer is formed on a glass substrate and then the glass substrate is removed by etching. Forming a lower crystalline semiconductor thin film through the same, a step of recrystallizing the lower crystalline semiconductor thin film to form a polycrystalline or single crystalline semiconductor thin film, and a step of forming the polycrystalline or single crystalline semiconductor thin film. Forming a TFT substrate layer comprising a peripheral circuit and a display portion, etching and removing the glass substrate, and forming a transparent or opaque resin support substrate having a conductive thin film formed on the surface thereof and the TFT substrate layer. A bonding step, a TFT substrate layer on which the transparent or opaque resin support substrate is bonded, and a transparent resin facing substrate having a transparent electrode formed on the surface thereof. Comprising a step of bringing it.
[0011]
Further, according to a method of manufacturing an electro-optical display device according to the present invention, the method of manufacturing an electro-optical display device in which a TFT substrate layer is formed on a glass substrate and then the glass substrate is removed by etching. Forming a lower crystalline semiconductor thin film through the same, a step of recrystallizing the lower crystalline semiconductor thin film to form a polycrystalline or single crystalline semiconductor thin film, and a step of forming the polycrystalline or single crystalline semiconductor thin film. Forming a TFT substrate layer comprising a peripheral circuit and a display portion on the glass substrate, laminating a TFT substrate layer formed on the glass substrate with a transparent resin facing substrate having a transparent electrode formed on the surface thereof; A step of etching and removing the substrate; and a step of bonding the TFT substrate layer to a transparent or opaque resin support substrate having a conductive thin film formed on its surface. That.
[0012]
Here, a transparent or opaque resin support substrate having a conductive thin film formed on its surface and a TFT substrate layer are bonded to each other, so that the conductive thin film and the transparent electrode, which is a conductive thin film formed on the transparent resin facing substrate, form a periphery. The entire circuit and the display portion can be sandwiched between conductive thin films.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings to provide an understanding of the present invention.
[0014]
FIGS. 1 and 2 are schematic diagrams for explaining an example of a method of manufacturing a transmissive or transflective liquid crystal display device as an example of a method of manufacturing an electro-optical display device to which the present invention is applied.
Here, in an example of a method for manufacturing a transmissive or transflective liquid crystal display device, first, as shown in FIG. 1A, borosilicate glass, aluminosilicate glass is formed by a CVD method, a sputtering method, a vapor deposition method, or the like. 200 to 300 nm of SiO 2 ₂ Film 2, SiO ₂ A 50-100 nm SiNx film 3 is formed on the film, and a 200-300 nm SiO is formed on the SiNx film. ₂ Film, SiO ₂ A transparent conductive thin film 4 such as ITO (indium-tin-based transparent conductive film) or IZO (indium-zinc oxide based transparent conductive film) having a thickness of 100 to 200 nm is formed on the upper layer of the film, and a SiO film having a thickness of 100 to 200 nm is formed on the transparent conductive thin film. ₂ Film, SiO ₂ An amorphous silicon thin film 5 having a thickness of 50 nm is formed on the upper layer of the film by a CVD method. Subsequently, the amorphous silicon thin film is formed by using a general-purpose photolithography technique and an etching technique as shown in FIG. Etching is performed on the amorphous silicon thin film 5 in a region other than the region necessary for forming the above.
Note that an amorphous silicon thin film, a microcrystalline silicon-containing amorphous silicon thin film, an amorphous silicon-containing microcrystalline silicon thin film, or the like by a catalytic CVD method may be used.
[0015]
Here, the SiO 2 formed on the entire surface of the glass substrate ₂ It is sufficient that the thin film formed on the film functions as an insulating film. The thin film does not necessarily need to be a SiNx film, and any insulating film may be used. The insulating film is preferably a nitride-based silicon film such as SiNx or SiON so that the insulating film can function as an etching stopper when etching the glass substrate with a hydrofluoric / nitric acid-based etchant described later.
[0016]
In addition, SiO 2 is placed between the glass substrate and the SiNx film, and between the SiNx film and the transparent conductive thin film. ₂ The film is formed to improve the adhesion between the glass substrate and the SiNx film, and between the SiNx film and the transparent conductive thin film, and is used to adhere the glass substrate to the SiNx film and the SiNx film and the transparent conductive thin film. If the properties are sufficient, the SiO ₂ There is no need to form a film.
If necessary, the upper layer of the amorphous silicon thin film 5 may be made of SiO. ₂ When excimer laser annealing is performed to form a film of about 50 nm and polycrystallize the amorphous silicon thin film 5, the reflection of the excimer laser may be reduced.
[0017]
Next, after heating at 450 ° C. to 500 ° C. for several tens of minutes to degas hydrogen contained in the amorphous silicon thin film 5, excimer laser annealing is performed in a state where the amorphous silicon thin film 5 is focused. Then, the amorphous silicon thin film 5 is recrystallized to form a polycrystalline silicon (hereinafter referred to as polysilicon) thin film 14.
[0018]
Next, in this polysilicon layer, a TFT or a wiring as a display element of the LCD, and / or a semiconductor element such as a TFT, a diode, a resistor, a capacitor, a coil or a wiring as a peripheral circuit, and / or a semiconductor integrated circuit are provided. Is formed, a flattening film 6 is laminated, and a transparent pixel electrode 7 is formed, thereby producing a peripheral circuit integrated type polysilicon TFT substrate layer as shown in FIG. 1C.
[0019]
At the same time, external extraction electrodes (not shown) such as solder bumps connected to the peripheral circuits of the peripheral circuit integrated type polysilicon TFT substrate layer are formed. After the LCD panel is formed, anisotropic conductive film bonding, ultrasonic bonding, It is preferable to bond the printed circuit board to a flexible substrate by soldering or the like, or to mount the printed circuit board on a printed circuit board (PCB).
Here, in the case of a transmissive LCD, the polysilicon thin film in the pixel opening is etched to form a transparent material such as a transparent resin or SiO 2. ₂ The film is buried with a film, and the surface is polished and flattened by CMP or the like to form a transparent pixel electrode connected to the drain of the display TFT. On the other hand, in the case of a transflective LCD, in order to have two regions of reflection / transmission in one pixel, a part of the reflection pixel electrode is patterned and a transparent pixel electrode is formed there. For example, the polysilicon thin film in the pixel opening is etched and a transparent material such as a transparent resin or SiO ₂ After forming a photosensitive resin film with moderate unevenness by a general-purpose lithography technique at a part of the pixel opening where the surface is polished by CMP or the like and polished by CMP etc., the surface is polished and reflowed by heating. By forming a highly reflective aluminum film connected to the drain to form a reflective pixel electrode with a moderate unevenness, and forming a transparent pixel electrode in the pixel opening including the aluminum film, the reflection / transmission within one pixel is achieved. A pixel electrode having two regions is formed. Alternatively, a transparent pixel electrode such as ITO or IZO connected to the drain of the display TFT is formed in the pixel opening, and a photosensitive resin film having an appropriate uneven shape is formed on a part of the transparent pixel electrode by a general-purpose lithography technique. After reflowing by heating, a high-reflectance aluminum film connected to the transparent pixel electrode is formed to form a reflective pixel electrode having an appropriate uneven shape, thereby providing two reflective / transmissive regions in one pixel. Form electrodes. By controlling the transmission / reflection pixel area ratio, the transmission / reflection optical characteristics can be balanced. It goes without saying that the transmissive display of this transflective LCD uses a backlight light source as in the transmissive LCD, and the reflective display uses sunlight like the reflective LCD. For a transflective LCD, for a brighter display, the reflective pixel electrode is also covered with an opaque area such as a wiring or a TFT to increase the aperture ratio, and the transparent pixel electrode is arranged in a portion having no opaque wiring. It is necessary to take measures such as increasing the overall aperture ratio.
In addition, in order to realize the appearance of paper white in the reflective LCD and the transflective LCD, a function of reducing the specular component of the reflected light and diffusing and scattering the light is performed. Must be limited to a specific range to optimize the angle distribution shape.
In addition, if the irregularities are arranged regularly, rainbow-colored light interference occurs in the reflected image under sunlight, and the visibility decreases. Therefore, the irregularities are randomly arranged by applying an array represented by a Fibonacci sequence to the irregularity pattern. Need to be
[0020]
Next, as shown in FIG. 1D, a UV irradiation curable tape (hereinafter, referred to as a UV tape) 8 composed of a base material 8a having an antistatic function with little adhesive residue on the surface of the TFT substrate layer and an adhesive 8b. And, if necessary, a UV tape and a protective glass substrate 9 with a water-soluble adhesive 10.
[0021]
Here, as the water-soluble adhesive, a hot-melt water-soluble solid wax (for example, Aqua Wax 20/50/80 (main component is fatty acid glyceride), Nikka Seiko Co., Ltd.), Aqua Wax 553/531/442 / SE (Main components are polyethylene glycol, vinylpyrrolidone copolymer, glycerin polyether), PEG wax 20 (main component is polyethylene glycol) and the like, or water-soluble liquid wax (for example, synthetic resin-based liquid bonding from Nikka Seiko Co., Ltd.) AQUALIQUID WA-302 (main component is polyethylene glycol, vinylpyrrolidone derivative, methanol), WA-20511 / QA-20566 (main component is polyethylene glycol, vinylpyrrolidone derivative, IPA, water, etc.) can be used. it can.
[0022]
The reason why the water-soluble adhesive is applied not only to the surface of the protective glass on the TFT substrate layer side, but also to both surfaces of the protective glass is that the protective glass is etched at the time of etching using a hydrofluoric acid / nitric acid-based etchant described later. This is for suppressing the etching of the protective glass and enabling repeated use of the protective glass.
[0023]
Subsequently, as shown in FIG. 2E, a glass substrate and SiO 2 formed on the surface of the glass substrate are formed. ₂ The film is removed by etching using a hydrofluoric / nitric acid etching solution.
At this time, since the nitride silicon film exists and acts as an etching stopper,
There is no problem due to uneven etching.
[0024]
Next, as shown in FIG. 2 (f), a transparent material such as PET (polyethylene terephthalate), polyolefin, or acryl having a heat resistance and a moisture resistance of 0.1 to 0.5 mm using a UV irradiation curable adhesive 11 is used. After bonding to the resin support substrate 12, the protective glass substrate is peeled off by washing with hot pure water at 50 ° C. to 60 ° C., and the UV tape is cured by UV irradiation to peel off the UV tape.
[0025]
Subsequently, as shown in FIG. 2G, an organic or inorganic alignment film (1) 13 is formed and an alignment process is performed.
Here, when an organic alignment film for rubbing such as polyimide or a photo-organic alignment film for non-rubbing is used as the alignment film (1), the coating is performed by roll coating or spin coating, and then the rubbing direction of the opposite substrate described later is used. Rubbing in the direction of 45 ° or 90 °, or irradiating polarized UV to the TFT substrate layer in an oblique direction in the direction of 45 ° or 90 ° to the orientation direction of the polarized UV irradiation of the opposite substrate described later. Apply. In the case where an inorganic alignment film is used as the alignment film (1), an alignment process is performed by obliquely depositing SiO in a 60 ° oblique direction optimized on the TFT substrate layer or the counter substrate. Orientation treatment is performed by optimized oblique deposition and ion blow of the DLC film.
[0026]
Next, a transparent electrode 16 such as ITO or IZO is formed on a transparent resin substrate 15 such as PET (polyethylene terephthalate), polyolefin, or acrylic having heat resistance and moisture resistance of 0.1 to 0.5 mm, and an organic or inorganic electrode is formed. A system-oriented alignment film (2) 17 is formed, and is superposed on a transparent resin facing substrate 18 that has been subjected to an orientation treatment, using a sealing agent 19. In addition, at the time of superposition, the liquid crystal gap between the TFT substrate layer and the transparent resin facing substrate is adjusted by spraying spacers 20 such as micropearls as necessary.
Here, when an organic alignment film for rubbing such as polyimide or a photo-organic alignment film for non-rubbing is used as the alignment film (2), it is most suitable for rubbing or substrate after coating by roll coating or spin coating. The alignment treatment is performed by irradiating polarized UV light from the inclined oblique direction. When an inorganic alignment film is used as the alignment film (2), an alignment process is performed by obliquely depositing SiO from the optimized oblique direction on the opposing substrate, or an optimized DLC film is formed. Orientation treatment is performed by oblique evaporation and ion blowing.
[0027]
Subsequently, after cutting the portion indicated by reference symbol A in FIG. 2 (h) so as to become an individual LCD panel, a liquid crystal is injected and sealed in a region surrounded by a sealant, thereby obtaining a transmissive or half-screen. A transmissive liquid crystal display device can be obtained.
[0028]
3 and 4 are schematic diagrams for explaining another example of a method of manufacturing a transmissive or transflective liquid crystal display device which is another example of a method of manufacturing an electro-optical display device to which the present invention is applied. is there.
Here, in another example of a method of manufacturing a transmissive or transflective liquid crystal display device, first, as shown in FIG. 3A, a low strain point glass substrate is entirely formed by a CVD method, a sputtering method, a vapor deposition method, or the like. 200-300nm SiO ₂ Film, SiO ₂ A 50-100 nm SiNx film as an upper layer of the film, and a 200-300 nm SiO as an upper layer of the SiNx film. ₂ Film, SiO ₂ A 50 nm amorphous silicon thin film is formed on the film by the CVD method, and then the amorphous silicon thin film is subjected to general-purpose photolithography and etching in the same manner as in the above-described example of the method of manufacturing a transmissive or transflective liquid crystal display device. As shown in FIG. 3B, the amorphous silicon thin film is etched away from the area required for forming the TFT, the resistor, the capacitor, and the like by using the technique.
Note that an amorphous silicon thin film, a microcrystalline silicon-containing amorphous silicon thin film, an amorphous-containing microcrystalline silicon thin film, or the like by a catalytic CVD method may be used.
[0029]
Here, it is preferable that the insulating film is a nitride-based silicon film so that the insulating film can function as an etching stopper when reducing the halogen element contamination from the substrate side and etching the glass substrate with a hydrofluoric acid-based etchant. If the adhesion between the point and the glass substrate and the SiNx film is sufficient, SiO ₂ The point that there is no need to form a film is the same as in the above-described example of the method of manufacturing a transmissive or transflective liquid crystal display device.
[0030]
Subsequently, a polysilicon TFT substrate integrated with a peripheral circuit as shown in FIG. 3C is formed by a method similar to the above-described example of the method of manufacturing the transmissive or transflective liquid crystal display device. Further, as shown in FIG. 3D, a UV tape is bonded to the surface of the TFT substrate layer, and if necessary, the UV tape and the protective glass substrate are bonded with a water-soluble adhesive. As shown in the figure, a glass substrate and SiO formed on the surface of the glass substrate ₂ The film is removed by etching using a hydrofluoric / nitric acid etching solution.
[0031]
Next, as shown in FIG. 4 (f), a transparent conductive thin film such as ITO or IXO having a thickness of 100 to 200 nm was formed on the surface thereof using a UV irradiation curable adhesive. After bonding to a transparent resin supporting substrate such as PET (polyethylene terephthalate), polyolefin, or acryl having heat resistance and moisture resistance, the same as in the above-described example of the method of manufacturing a transmissive or transflective liquid crystal display device, The protective glass substrate is peeled off by washing with warm pure water at a temperature of 60 ° C. to 60 ° C., and UV irradiation is cured to peel off the UV tape. In addition, as shown in FIG. 4G, an organic or inorganic alignment film (1) is formed and an alignment process is performed.
[0032]
Thereafter, in the same manner as in the above-described example of the method of manufacturing a transmissive or transflective liquid crystal display device, a transparent electrode and an organic or inorganic alignment film (2) are formed and subjected to an alignment process. After overlapping with a transparent resin facing substrate such as PET (polyethylene terephthalate), polyolefin, or acrylic having a heat resistance and moisture resistance of 0.5 mm using a sealant, cutting is performed at a position indicated by reference symbol B in FIG. Then, a transmissive or transflective liquid crystal display device can be obtained by injecting and sealing the liquid crystal. In the case of superposition, the liquid crystal gap between the TFT substrate layer and the transparent resin opposing substrate is adjusted by spraying spacers such as micropearls as necessary. The same applies to an example of a method for manufacturing a display device.
[0033]
In the method of manufacturing a transmissive or transflective liquid crystal display device to which the present invention is applied, the glass substrate is removed by etching, and the transparent resin facing substrate is laminated and cut after being bonded to the transparent resin supporting substrate. Liquid crystal injection sealing is performed.
On the other hand, even if the transparent resin facing substrate is overlapped before the glass substrate is removed by etching, the glass substrate is removed by etching, and the glass substrate is bonded to the transparent resin support substrate and cut, and the liquid crystal injection sealing is performed. good.
Further, at this time, before etching and removing the glass substrate, a non-defective TFT chip is superimposed on a non-defective TFT chip, and the liquid crystal injection sealing is performed. Thereafter, the glass substrate is etched and removed, and the transparent resin supporting substrate is removed. You may cut and paste.
Further, at this time, a non-defective TFT chip is superimposed on a non-defective TFT chip before etching the glass substrate, and liquid crystal injection sealing is performed. Thereafter, the glass substrate is etched and removed to form a non-defective TFT chip. A non-defective transparent resin support substrate chip may be attached and cut.
[0034]
FIGS. 5 and 6 are schematic views for explaining an example of a method of manufacturing a reflection type liquid crystal display device which is still another example of a method of manufacturing an electro-optical display device to which the present invention is applied.
Here, in an example of a method of manufacturing a reflection type liquid crystal display device, first, as shown in FIG. 5A, a 200 to 300 nm SiO 2 is formed on the entire surface of a low strain point glass substrate by a CVD method, a sputtering method, an evaporation method, or the like. ₂ Film, SiO ₂ A 50-100 nm SiNx film as an upper layer of the film, and a 200-300 nm SiO as an upper layer of the SiNx film. ₂ Film, SiO ₂ A 100-200 nm metal thin film such as an aluminum film 21 on the upper layer of the film, and a 100-200 nm SiO on the upper layer of the aluminum film. ₂ Film, SiO ₂ An amorphous silicon thin film having a thickness of 50 nm is formed on the film by a CVD method, and subsequently, an example of the above-described method of manufacturing a transmissive or transflective liquid crystal display device and a method of manufacturing a transmissive or transflective liquid crystal display device are described. As shown in FIG. 5B, the amorphous silicon thin film is etched using a general-purpose photolithography technique and an etching technique, as shown in FIG. I do.
Note that an amorphous silicon thin film, a microcrystalline silicon-containing amorphous silicon thin film, an amorphous silicon-containing microcrystalline silicon thin film, or the like by a catalytic CVD method may be used.
[0035]
Where SiO ₂ The conductive thin film formed on the film may be any metal thin film, not necessarily an aluminum film, but may be an aluminum-silicon alloy, nickel, chromium, copper, silver, or a silver alloy.
However, in the case where incident light to be recrystallized such as excimer laser or flash lamp annealing is reflected or absorbed, it is necessary to optimize the incident energy required for recrystallization.
In addition, when the glass substrate is etched with a hydrofluoric / nitric acid-based etchant, the insulating film is preferably a nitride-based silicon film so that the insulating film can function as an etching stopper when the glass substrate is etched with a hydrofluoric / nitric acid-based etchant. If the adhesion between the glass substrate and the SiNx film and between the glass substrate and the SiNx film and the metal thin film are sufficient, SiO ₂ The point that there is no need to form a film is the same as the above-described example of the method of manufacturing a transmissive or transflective liquid crystal display device and another example of the method of manufacturing a transmissive or transflective liquid crystal display device.
[0036]
Subsequently, as shown in FIG. 5C, a method similar to the above-described example of the method of manufacturing a transmissive or transflective liquid crystal display device and another method of manufacturing a transmissive or transflective liquid crystal display device are used. A polysilicon TFT substrate with integrated peripheral circuits is formed. Reflective electrodes such as aluminum, aluminum-silicon alloy, silver, and silver alloy in the pixel display area of the reflective LCD have an appropriate light scattering effect for direct viewing. In order to improve the visibility of the display by giving an appropriate unevenness shape to the electrode, it is preferable to use a highly flat electrode shape for a projector.
[0037]
Next, as shown in FIG. 5D, a transparent electrode and an organic or inorganic alignment film (2) are formed, and the transparent resin facing substrate subjected to the alignment treatment is overlaid using a sealant. In the case of superposition, the liquid crystal gap between the TFT substrate layer and the transparent resin opposing substrate is adjusted by spraying spacers such as micropearls as necessary. This is the same as another example of the method of manufacturing the display device and another example of the method of manufacturing the transmissive or transflective liquid crystal display device.
[0038]
Next, the transparent resin facing substrate is cut with a laser or a carbide cutter to form a single LCD panel, and liquid crystal is injected and sealed in a region surrounded by a sealant as shown in FIG. To form a suitable LCD.
[0039]
Subsequently, as shown in FIG. 6 (f), a UV tape is attached to the surface of the transparent resin facing substrate, and the UV tape and the protective glass substrate are attached with a water-soluble adhesive, and then, as shown in FIG. 6 (g). The glass substrate and the SiO formed on the surface of the glass substrate ₂ The film is removed by etching using a hydrofluoric / nitric acid etching solution.
[0040]
Here, the reason why the UV tape is attached to the surface of the transparent resin facing substrate is to remove the influence on the sealant at the time of cleaning described later, and it is necessary to consider the influence on the sealant at the time of cleaning. If not, a protective glass substrate may be directly bonded to the surface of the transparent resin facing substrate with a water-soluble adhesive.
[0041]
Thereafter, as shown in FIG. 6 (h), after bonding the transparent resin support substrate using a UV irradiation curable adhesive, the protective glass substrate is peeled off by performing warm pure water washing at 50 ° C. to 60 ° C. After UV irradiation curing, the UV tape is peeled off, and a transparent resin support substrate, SiO ₂ A reflective liquid crystal display device can be obtained by cutting a film, a SiNx film, an aluminum film, or the like with a laser, a carbide cutter, or the like.
At this time, in the case of an opaque resin support substrate, the substrate is bonded with a low-temperature curing adhesive as described above.
[0042]
7 and 8 are schematic views for explaining another example of the method of manufacturing the electro-optical display device to which the present invention is applied, which is still another example of the method of manufacturing a reflective liquid crystal display device.
Here, in another example of the method of manufacturing the reflection type liquid crystal display device, first, as shown in FIG. 7A, 200 to 300 nm is formed on the entire surface of the low strain point glass substrate by a CVD method, a sputtering method, an evaporation method, or the like. SiO ₂ Film, SiO ₂ A 50-100 nm SiNx film as an upper layer of the film, and a 200-300 nm SiO as an upper layer of the SiNx film. ₂ Film, SiO ₂ An amorphous silicon thin film having a thickness of 50 nm is formed on the film by a CVD method, and then the amorphous silicon thin film is formed using a general-purpose photolithography technique and an etching technique in the same manner as in the above-described example of the method of manufacturing a reflective liquid crystal display device. As shown in FIG. 7B, the amorphous silicon thin film is etched in a region other than a region necessary for forming a TFT, a resistor, a capacitor, and the like.
Note that an amorphous silicon thin film, a microcrystalline silicon-containing amorphous silicon thin film, an amorphous silicon-containing microcrystalline silicon thin film, or the like by a catalytic CVD method may be used.
[0043]
Here, it is preferable that the insulating film is a nitride silicon film so that the insulating film can function as an etching stopper at the time of reducing the halogen element contamination from the substrate side and etching the glass substrate with a hydrofluoric acid / nitric acid etching solution. In the case where the preferable point and the adhesion between the glass substrate and the SiNx film are sufficient, it is not always necessary to use SiO2. ₂ The point that there is no need to form a film is the same as in the above-described example of the method for manufacturing a reflective liquid crystal display device.
[0044]
Subsequently, after forming a peripheral circuit-integrated polysilicon TFT substrate as shown in FIG. 7C by a method similar to the above-described example of the method of manufacturing the reflection type liquid crystal display device, as shown in FIG. Then, a transparent electrode and an organic or inorganic alignment film (2) are formed, and the transparent resin facing substrate subjected to the alignment treatment is overlaid using a sealant. The point of adjusting the liquid crystal gap between the TFT substrate layer and the transparent resin facing substrate by spraying spacers such as micropearls as necessary at the time of superposition is the same as in the manufacturing of the above-mentioned reflective liquid crystal display device. This is the same as an example of the method.
[0045]
Next, the transparent resin facing substrate is cut with a laser or a carbide cutter to form a single LCD panel, and liquid crystal is injected and sealed in a region surrounded by a sealant as shown in FIG. To form a suitable LCD. Further, as shown in FIG. 8 (f), a UV tape is attached to the surface of the transparent resin facing substrate, and the UV tape and the protective glass substrate are attached with a water-soluble adhesive, and then as shown in FIG. 8 (g). A glass substrate and SiO formed on the surface of the glass substrate. ₂ The film is removed by etching using a hydrofluoric / nitric acid etching solution.
[0046]
Thereafter, as shown in FIG. 8 (h), after bonding to a resin support substrate having a metal thin film, for example, an aluminum film formed on the surface thereof, using a low-temperature curing type adhesive 28, the above-mentioned reflection type liquid crystal display device is formed. As in the example of the manufacturing method of FIG. 8, the protective glass substrate is peeled off by washing with warm pure water at 50 ° C. to 60 ° C., and the UV tape is hardened by UV irradiation, and the UV tape is peeled off. (I) Resin support substrate, SiO ₂ A reflective liquid crystal display device can be obtained by cutting a film, a SiNx film, an aluminum film, or the like with a laser or a carbide cutter.
[0047]
In the method of manufacturing a reflection type liquid crystal display device to which the present invention is applied, the transparent resin facing substrate is overlapped before the glass substrate is removed by etching, and then the glass substrate is removed by etching, and the glass substrate is attached to the resin supporting substrate. Although the liquid crystal injection sealing is performed by cutting together, the glass substrate may be removed by etching, and after bonding to the resin supporting substrate, the transparent resin facing substrate may be overlapped and cut to perform the liquid crystal injection sealing. .
Further, at this time, before etching and removing the glass substrate, a non-defective TFT chip is superimposed on a non-defective TFT chip, and the liquid crystal injection sealing is performed. Thereafter, the glass substrate is etched and removed, and the transparent resin supporting substrate is removed. You may cut and paste.
Further, at this time, a non-defective TFT chip is superimposed on a non-defective TFT chip before etching the glass substrate, and liquid crystal injection sealing is performed. Thereafter, the glass substrate is etched and removed to form a non-defective TFT chip. A non-defective transparent resin support substrate chip may be attached and cut.
[0048]
In the above description, an example is described in which an amorphous silicon thin film is converted into a polysilicon thin film by performing excimer laser annealing. However, flash lamp annealing described in JP-A-2002-252174 and JP-A-2002-351628 are described. A polysilicon film or a single-crystal silicon film may be formed by an optical harmonic modulation laser annealing described in the official gazette, a condensing lamp annealing described in JP-A-2002-246310, or the like. A monocrystalline silicon film may be formed by grapho-epitaxial growth described in Japanese Unexamined Patent Application Publication No. 2000-68514 or heteroepitaxial growth described in Japanese Patent Application Laid-Open No. 2000-89249.
[0049]
Here, as shown in FIG. 9, a method of forming a monocrystalline silicon thin film by grapho-epitaxial growth is as follows. ₂ / SiNx / ITO / SiNx / SiO ₂ Is formed, and a concave step 23 in a region of TFT, Di, resistance, capacitance, etc. is formed in the uppermost SiO2 film of the multilayer film (1). Also, a low-crystalline semiconductor thin film such as an amorphous silicon thin film and a cap insulating film SiO ₂ When amorphous silicon thin film is melted and cooled by Xe flash lamp anneal, optical harmonic modulation laser anneal, or CW ultraviolet lamp anneal, etc., single crystallinity is formed by grapho-epitaxial growth using the bottom corner of the concave step as a seed. A silicon thin film is formed. Note that, in order to degas the contained hydrogen, a preheating treatment at 450 ° C. to 500 ° C. is performed.
A TFT, a diode, a resistor, a capacitor, and the like are formed on the formed single crystal silicon thin film to form a peripheral circuit integrated single crystal silicon TFT substrate layer.
Subsequent processes follow the embodiment of the above-described peripheral circuit integrated type polysilicon TFT substrate.
[0050]
In addition, as shown in FIG. 10, a method of forming a single-crystal silicon thin film by heteroepitaxial growth is as follows. ₂ / SiNx / ITO / SiNx / SiO ₂ Is formed, and a crystalline sapphire thin film 24 is formed on the entire surface by a catalytic CVD method, a high-density plasma CVD method such as ECR, ICP, helicon wave, a laser CVD method, or the like. Further, a lower crystalline semiconductor thin film such as an amorphous silicon thin film and a cap insulating film SiO ₂ Is formed to form a TFT, Di, a resistor, and a capacitance region. Thereafter, when the amorphous silicon thin film is melted and gradually cooled by Xe flash lamp annealing, optical harmonic modulation laser annealing, or CW ultraviolet lamp annealing, a monocrystalline silicon thin film is formed by heteroepitaxial growth using the crystalline sapphire thin film as a seed. . Note that, in order to degas the contained hydrogen, a preheating treatment at 450 ° C. to 500 ° C. is performed.
A TFT, a diode, a resistor, a capacitor, and the like are formed on the formed single crystal silicon thin film to form a peripheral circuit integrated single crystal silicon TFT substrate layer.
Subsequent processes follow the embodiment of the above-described peripheral circuit integrated type polysilicon TFT substrate.
[0051]
In the above description, a method of manufacturing a transmissive or transflective liquid crystal display device and a method of manufacturing a reflective liquid crystal display device are described as examples of a method of manufacturing an electro-optical display device to which the present invention is applied. The electro-optical display device is not limited to a transmissive or transflective liquid crystal display device or a reflective liquid crystal display device, but may be an organic EL (Electronic Luminescent) or the like.
[0052]
There are two types of organic EL, top emission type and bottom emission type.
The organic EL layer includes a single-layer type, a two-layer type, and a three-layer type. When the three-layer type of a low-molecular compound is shown, the structure is as follows: anode / hole transport layer / light emitting layer / electron transport layer / cathode; Or, it becomes anode / hole transporting light emitting layer / carrier block layer / electron transporting light emitting layer / cathode.
For example, the display section of the electro-optical display element substrate of the top emission type organic EL is formed on a cathode (metal electrode) such as Li-AL or Mg-Ag connected to the drain of the current driving TFT for each pixel. An organic EL light emitting layer of red, blue, green, or the like is deposited for each pixel, and an anode (transparent electrode) such as an ITO film is formed thereon (an anode is formed on the entire surface if necessary), and the entire surface. Is covered with a moisture-resistant transparent resin.
In the case of the top emission organic EL, a cathode such as Li-AL or Mg-Ag connected to the drain of the display TFT is formed in the pixel display portion. At this time, when the cathode covers the current driving MOSTFT, the light emission area becomes large and the cathode becomes a light shielding film, so that self-emission light or the like does not enter the MOSTFT. Therefore, no leak current is generated, and deterioration of TFT characteristics can be avoided.
For example, a method of forming a top emission type organic EL substrate layer as shown in FIG. 11 is to form a laminated film (2) 25 composed of an insulating film / conductive film / insulating film on the entire surface of a glass substrate 1 and use a polysilicon TFT or a single layer. On a cathode (metal electrode) such as Li-AL or Mg-Ag connected to the drain of the crystalline silicon TFT, an organic EL light emitting layer of red, blue, green or the like is deposited for each pixel, and on top thereof. An organic EL substrate layer is formed by forming a moisture-resistant transparent resin protective film 27 on the entire surface of the organic EL layer 26 on which an anode (transparent electrode) such as an ITO film is formed (an anode is formed on the entire surface if necessary). Form.
After that, a UV tape is stuck on the surface, a support substrate is stuck thereon with a water-soluble adhesive if necessary, and a glass substrate is etched with a hydrofluoric acid / nitric acid type etching solution, and an adhesive is stuck on the organic EL substrate layer. Then, a resin supporting substrate is bonded and cut to form a plastic organic EL panel.
[0053]
On the other hand, the display section of the electro-optical display element substrate of the bottom emission organic EL has a red color for each pixel on an anode (transparent electrode) such as an ITO film connected to the source of the current driving TFT for each pixel. An organic EL light emitting layer of blue, green, or the like is deposited, and a cathode (metal electrode) such as Li-AL or Mg-Ag is formed thereon (a cathode is formed on the entire surface if necessary). The structure is such that the entire surface is covered with the moisture-resistant transparent resin 21. By this sealing, moisture intrusion from the outside can be prevented, deterioration of the organic EL light-emitting layer which is weak to moisture and oxidation of the electrode can be prevented, and long life, high quality and high reliability can be realized.
For example, a method of forming a bottom emission organic EL substrate layer as shown in FIG. 11 is to form a laminated film (2) 25 composed of an insulating film / conductive film / insulating film on the entire surface of the glass substrate 1 and to form a polysilicon TFT or a single layer. On an anode (transparent electrode) such as an ITO film connected to the source of the crystalline silicon TFT, an organic EL light emitting layer of red, blue, green or the like is deposited for each pixel, and Li-AL or Mg is formed thereon. Forming an organic EL substrate layer by forming an organic EL layer 26 on which a cathode (metal electrode) such as Ag is formed (a cathode is formed on the entire surface if necessary) and a moisture-resistant transparent resin protective film 27; I do.
After that, a UV tape is stuck on the surface, a support substrate is stuck on it with a water-soluble adhesive if necessary, and a glass substrate is etched with a hydrofluoric / nitric acid-based etchant, and is transparently bonded to the organic EL substrate layer. A transparent resin support substrate is bonded with an agent and cut to form a plastic organic EL panel.
Although the embodiment of the silicon-based semiconductor thin film has been described above, it goes without saying that a compound semiconductor-based thin film such as GaAs or SiC may be used.
[0054]
【The invention's effect】
In the method of manufacturing an electro-optical display device to which the present invention is applied, a conductive thin film is formed over the entire surface under the TFT substrate layer, and a transparent electrode is formed on the transparent resin facing substrate. An electro-optical display device which is sandwiched between conductive films and which is resistant to external electrostatic damage and electromagnetic interference can be obtained.
[0055]
Further, since the nitride-based silicon film has a glass etching stopper effect by a hydrofluoric / nitric acid-based etchant, damage due to glass etching can be suppressed, and improvement in yield, quality, and productivity can be expected.
[0056]
Furthermore, since the glass substrate is etched and removed while the surface is protected by a UV irradiation curable tape having an antistatic function with little adhesive residue, electrostatic damage at the time of glass etching can be suppressed.
[0057]
Further, even if the glass substrate is removed by etching, since the glass substrate is held by the UV tape or the support substrate, cracks, chips, cracks, and the like can be suppressed, and improvement in yield, quality, and productivity is expected. it can. Furthermore, since peeling is performed after the adhesive strength is weakened by UV irradiation, cracks, chips, cracks, and the like during peeling can be suppressed, and improvement in yield, quality, and productivity can be expected.
[0058]
In addition, a resin support substrate with a high-performance, high-definition, high-brightness polysilicon TFT or single-crystal silicon TFT substrate layer that is lightweight, thin, compact, inexpensive, and resistant to electrostatic damage and electromagnetic interference, and a transparent resin facing substrate A plastic electro-optical display device such as a configured plastic LCD or a plastic organic EL is realized.
[Brief description of the drawings]
FIG. 1 is a schematic diagram (1) for explaining an example of a method of manufacturing a transmissive or transflective liquid crystal display device as an example of a method of manufacturing an electro-optical display device to which the present invention is applied.
FIG. 2 is a schematic diagram (2) illustrating an example of a method of manufacturing a transmissive or transflective liquid crystal display device, which is an example of a method of manufacturing an electro-optical display device to which the present invention is applied.
FIG. 3 is a schematic diagram (1) for explaining another example of a method of manufacturing a transmissive or transflective liquid crystal display device, which is another example of a method of manufacturing an electro-optical display device to which the present invention is applied. It is.
FIG. 4 is a schematic diagram (2) for explaining another example of a method of manufacturing a transmissive or transflective liquid crystal display device which is another example of a method of manufacturing an electro-optical display device to which the present invention is applied. It is.
FIG. 5 is a schematic diagram (1) illustrating an example of a method of manufacturing a reflective liquid crystal display device, which is still another example of a method of manufacturing an electro-optical display device to which the present invention is applied.
FIG. 6 is a schematic diagram (2) illustrating an example of a method of manufacturing a reflective liquid crystal display device, which is still another example of a method of manufacturing an electro-optical display device to which the present invention is applied.
FIG. 7 is a schematic diagram (1) illustrating another example of a method of manufacturing a reflective liquid crystal display device, which is still another example of a method of manufacturing an electro-optical display device to which the present invention is applied. .
FIG. 8 is a schematic diagram (2) for explaining another example of the method of manufacturing the reflection type liquid crystal display device which is still another example of the method of manufacturing the electro-optical display device to which the present invention is applied. .
FIG. 9 is a schematic diagram for explaining a monocrystalline silicon film formed by grapho-epitaxial growth.
FIG. 10 is a schematic diagram for explaining a single-crystal silicon film formed by heteroepitaxial growth.
FIG. 11 is a schematic diagram for explaining an organic EL substrate layer.
[Explanation of symbols]
1 Glass substrate
2 SiO ₂ film
3 SiNx film
4 Transparent conductive thin film
5 Amorphous silicon thin film
6 Flattening film
7 Transparent pixel electrode
8 UV tape
9 Protective glass substrate
10 Water-soluble adhesive
11 UV irradiation curing adhesive
12. Transparent resin support substrate
13 Alignment film (1)
15 Transparent resin substrate
16 Transparent electrode
17 Alignment film (2)
18 Transparent resin facing substrate
19 Sealant
20 Spacer
21 Aluminum film
22 Multilayer film (1)
23 concave step
24 Crystalline sapphire thin film
25 laminated film (2)
26 Organic EL layer
27 Moisture resistant transparent resin protective film
28 Low temperature curing adhesive

Claims

After forming an electro-optical display element substrate layer on a glass substrate, in the method of manufacturing an electro-optical display device performing etching removal of the glass substrate,
Forming a conductive thin film on a glass substrate via a first insulating film;
Forming a lower crystalline semiconductor thin film over the conductive thin film via a second insulating film;
Recrystallizing the lower crystalline semiconductor thin film to form a polycrystalline or single crystalline semiconductor thin film,
Forming an electro-optical display element substrate layer comprising a peripheral circuit and a display portion on the polycrystalline or single-crystalline semiconductor thin film;
Performing etching removal of the glass substrate,
Bonding a transparent or opaque resin support substrate and the electro-optical display element substrate layer,
A method for manufacturing an electro-optical display device, comprising a step of superposing an electro-optical display element substrate layer on which the transparent or opaque resin support substrate is bonded and a transparent resin facing substrate having a transparent electrode formed on the surface thereof. .

After forming an electro-optical display element substrate layer on a glass substrate, in the method of manufacturing an electro-optical display device performing etching removal of the glass substrate,
Forming a conductive thin film on a glass substrate via a first insulating film;
Forming a lower crystalline semiconductor thin film over the conductive thin film via a second insulating film;
Recrystallizing the lower crystalline semiconductor thin film to form a polycrystalline or single crystalline semiconductor thin film,
Forming an electro-optical display element substrate layer comprising a peripheral circuit and a display portion on the polycrystalline or single-crystalline semiconductor thin film;
Laminating an electro-optical display element substrate layer formed on the glass substrate and a transparent resin facing substrate having a transparent electrode formed on the surface thereof,
Performing etching removal of the glass substrate,
Bonding the electro-optical display element substrate layer and a transparent or opaque resin support substrate.

After forming an electro-optical display element substrate layer on a glass substrate, in the method of manufacturing an electro-optical display device performing etching removal of the glass substrate,
Forming a lower crystalline semiconductor thin film on a glass substrate via an insulating film,
Recrystallizing the lower crystalline semiconductor thin film to form a polycrystalline or single crystalline semiconductor thin film,
Forming an electro-optical display element substrate layer comprising a peripheral circuit and a display portion on the polycrystalline or single-crystalline semiconductor thin film;
Performing etching removal of the glass substrate,
A step of bonding a transparent or opaque resin support substrate having a conductive thin film formed on its surface and the electro-optical display element substrate layer,
A method for manufacturing an electro-optical display device, comprising a step of superposing an electro-optical display element substrate layer on which the transparent or opaque resin support substrate is bonded and a transparent resin facing substrate having a transparent electrode formed on the surface thereof. .

After forming an electro-optical display element substrate layer on a glass substrate, in the method of manufacturing an electro-optical display device performing etching removal of the glass substrate,
Forming a lower crystalline semiconductor thin film on a glass substrate via an insulating film,
Recrystallizing the lower crystalline semiconductor thin film to form a polycrystalline or single crystalline semiconductor thin film,
Forming an electro-optical display element substrate layer comprising a peripheral circuit and a display portion on the polycrystalline or single-crystalline semiconductor thin film;
Laminating an electro-optical display element substrate layer formed on the glass substrate and a transparent resin facing substrate having a transparent electrode formed on the surface thereof,
Performing etching removal of the glass substrate,
Bonding a transparent or opaque resin support substrate having a conductive thin film formed on its surface to the electro-optical display element substrate layer.

The first insulating film is at least one of a silicon oxide film, a silicon nitride film, a silicon oxide / silicon nitride laminated film, a silicon oxide / silicon nitride / silicon oxide laminated film, and a silicon oxynitride film. The method for manufacturing an electro-optical display device according to claim 1 or 2, wherein

The insulating film is at least one of a silicon oxide film, a silicon nitride film, a silicon oxide / silicon nitride laminated film, a silicon oxide / silicon nitride / silicon oxide laminated film, and a silicon oxynitride film. A method for manufacturing an electro-optical display device according to claim 3.

The said lower crystalline semiconductor thin film is an amorphous silicon thin film, a microcrystalline silicon-containing amorphous silicon thin film, or an amorphous silicon-containing microcrystalline silicon thin film, wherein: A method for manufacturing an electro-optical display device according to claim 5.

The polycrystalline or single crystalline semiconductor thin film is formed by recrystallizing the lower crystalline semiconductor thin film by excimer laser annealing. 5. The method for manufacturing an electro-optical display device according to claim 6, wherein:

3. The polycrystalline or single-crystalline semiconductor thin film is formed by recrystallizing the lower crystalline semiconductor thin film by flash lamp annealing. 5. The method for manufacturing an electro-optical display device according to claim 6, wherein:

The polycrystalline or monocrystalline semiconductor thin film is formed by recrystallizing the lower crystalline semiconductor thin film by optical harmonic modulation laser annealing. 8. The method for manufacturing an electro-optical display device according to claim 5, claim 6, or claim 7.

The polycrystalline or monocrystalline semiconductor thin film is formed by recrystallizing the lower crystalline semiconductor thin film by condensing lamp annealing. 8. The method for manufacturing an electro-optical display device according to claim 5, 6, or 7.

The single-crystal semiconductor thin film is formed by grapho-epitaxial growth by a catalytic CVD method, according to claim 1, 2, 3, 4, 5, 5, 6, or 7. A method for manufacturing an electro-optical display device.

The single-crystal semiconductor thin film is formed by heteroepitaxial growth by a catalytic CVD method, according to claim 1, claim 2, claim 3, claim 4, claim 5, claim 6, or claim 7. A method for manufacturing an electro-optical display device.

2. The method according to claim 1, wherein the hydrogen contained in the lower crystalline semiconductor thin film is heated and degassed before the lower crystalline semiconductor is recrystallized to form a polycrystalline or single crystalline semiconductor thin film. The electric power according to claim 2, claim 3, claim 4, claim 5, claim 6, claim 6, claim 7, claim 8, claim 9, claim 10, claim 11, claim 12, or claim 13. Manufacturing method of optical display device.

The etching removal of the glass substrate is performed in a state where a protective tape is stuck to the surface of the electro-optical display element substrate layer and a water-soluble adhesive is applied to the surface thereof. The electro-optic according to claim 3, 4, 5, 5, 6, 7, 8, 9, 9, 10, 11, 12, 13, or 14. A method for manufacturing a display device.

The etching removal of the glass substrate is performed in a state where a protective tape is attached to a surface of the electro-optical display element substrate layer, and a holding glass substrate is attached to the surface via a water-soluble adhesive. 1, Claim 2, Claim 3, Claim 4, Claim 5, Claim 6, Claim 7, Claim 8, Claim 9, Claim 10, Claim 11, Claim 12, Claim 13, or A method for manufacturing the electro-optical display device according to claim 14.

17. The method according to claim 16, wherein the water-soluble adhesive is applied to both surfaces of the holding glass substrate.

18. The method according to claim 15, wherein the protective tape has a reduced adhesive strength when irradiated with ultraviolet light.

19. The method according to claim 15, wherein the protective tape is a base material or an adhesive having an antistatic function.