JP2004319999A5

JP2004319999A5 -

Info

Publication number: JP2004319999A5
Application number: JP2004098016A
Authority: JP
Filing date: 2004-03-30
Publication date: 2007-05-24
Anticipated expiration: 2024-03-30

Claims

A logic circuit comprising a thin film transistor on an insulating surface;
Detecting means for detecting the operation frequency of the logic circuit and outputting the detection result to a threshold control circuit;
The thin film transistor includes a first gate electrode to which a logic signal is input and a second gate electrode to which a threshold control signal is input from the threshold control circuit.

A logic circuit comprising a thin film transistor on an insulating surface;
Detecting means for detecting the operation frequency of the logic circuit and outputting the detection result to a threshold control circuit;
The thin film transistor includes a first gate electrode to which a logic signal is input, and a second gate electrode to which a threshold control signal is input from the threshold control circuit,
The semiconductor device, wherein the amount of current flowing between the source electrode and the drain electrode of the thin film transistor is controlled by the threshold control signal.

A logic circuit comprising a thin film transistor on an insulating surface;
Detecting means for detecting the operation frequency of the logic circuit and outputting the detection result to a threshold control circuit ;
And a storage medium storing a program for controlling the detection means,
The thin film transistor includes a first gate electrode to which a logic signal is input and a second gate electrode to which a threshold control signal is input from the threshold control circuit.

A logic circuit comprising a thin film transistor on an insulating surface;
Detecting means for detecting the operation frequency of the logic circuit and outputting the detection result to a threshold control circuit ;
And a storage medium storing a program for controlling the detection means,
The thin film transistor includes a first gate electrode to which a logic signal is input, and a second gate electrode to which a threshold control signal is input from the threshold control circuit,
The semiconductor device, wherein the amount of current flowing between the source electrode and the drain electrode of the thin film transistor is controlled by the threshold control signal.

In any one of Claims 1 thru | or 4,
A semiconductor device, wherein a semiconductor thin film is provided on the second gate electrode, and the first gate electrode is provided on the semiconductor thin film.

A first logic circuit comprising a first thin film transistor and a second logic circuit comprising a second thin film transistor on an insulating surface;
The operation frequency of the first logic circuit is detected, the detection result is output to the first threshold value control circuit, the operation frequency of the second logic circuit is detected, and the detection result is set to the second value. Detecting means for outputting to a threshold control circuit,
The first thin film transistor includes a first gate electrode to which a logic signal is input, and a second gate electrode to which a first threshold control signal is input from the first threshold control circuit. And
The second thin film transistor includes a third gate electrode to which a logic signal is input and a fourth gate electrode to which a second threshold control signal is input from the second threshold control circuit. And
The semiconductor device according to claim 1, wherein the first threshold value control circuit and the second threshold value control circuit are controlled independently.

A first logic circuit comprising a first thin film transistor and a second logic circuit comprising a second thin film transistor on an insulating surface;
The operation frequency of the first logic circuit is detected, the detection result is output to the first threshold value control circuit, the operation frequency of the second logic circuit is detected, and the detection result is set to the second value. Detection means for outputting to the threshold control circuit;
A storage medium storing a program for controlling the detection means,
The first thin film transistor includes a first gate electrode to which a logic signal is input, and a second gate electrode to which a first threshold control signal is input from the first threshold control circuit. And
The second thin film transistor includes a third gate electrode to which a logic signal is input and a fourth gate electrode to which a second threshold control signal is input from the second threshold control circuit. And
The semiconductor device according to claim 1, wherein the first threshold value control circuit and the second threshold value control circuit are controlled independently.

A substrate having an insulating surface;
A logic circuit having thin film transistors on the substrate;
It said logic circuit and is electrically connected to the detecting means for detecting the operation frequency of the logic circuit,
Wherein a and a said detection means and electrically connected to the threshold control circuit.

A substrate having an insulating surface;
A logic circuit having thin film transistors on the substrate;
It said logic circuit and is electrically connected to the detecting means for detecting the operation frequency of the logic circuit,
And a said detection means and electrically connected to the threshold control circuit,
The thin film transistor has a plurality of gate electrodes,
The semiconductor device, wherein the threshold control circuit is electrically connected to at least one of the plurality of gate electrodes.

A substrate having an insulating surface;
A first logic circuit having a first thin film transistor and a second logic circuit having a second thin film transistor on the substrate;
Detecting means electrically connected to the first logic circuit and the second logic circuit and detecting an operation frequency of the first logic circuit and an operation frequency of the second logic circuit;
A first threshold control circuit and a second threshold control circuit electrically connected to the detection means;
The semiconductor device according to claim 1, wherein the first threshold value control circuit and the second threshold value control circuit are controlled independently.

A substrate having an insulating surface;
A logic circuit having thin film transistors on the substrate;
An address comparator electrically connected to the logic circuit ;
A counter electrically connected to the address comparator;
A discrimination circuit electrically connected to the counter;
Wherein a and a said electrically connected to the determination circuit threshold control circuit.

A substrate having an insulating surface;
A logic circuit having thin film transistors on the substrate;
An address comparator electrically connected to the logic circuit ;
A counter electrically connected to the address comparator;
A discrimination circuit electrically connected to the counter;
And a said electrically connected to the determination circuit threshold control circuit,
The thin film transistor has a plurality of gate electrodes,
The semiconductor device, wherein the threshold control circuit is electrically connected to at least one of the plurality of gate electrodes .

A substrate having an insulating surface;
A first logic circuit having a first thin film transistor and a second logic circuit having a second thin film transistor on the substrate;
An address comparator electrically connected to the first logic circuit and the second logic circuit;
A counter electrically connected to the address comparator;
A discrimination circuit electrically connected to the counter;
A first threshold control circuit and a second threshold control circuit electrically connected to the determination circuit;
The semiconductor device according to claim 1, wherein the first threshold value control circuit and the second threshold value control circuit are controlled independently.

CPU, characterized by comprising the semiconductor device according to any one of claims 1 to 13.

The image processing circuit characterized by comprising the semiconductor device according to any one of claims 1 to 13.

An electronic apparatus characterized by comprising the semiconductor device according to any one of Claims 1 to 13.

A logic circuit comprising a thin film transistor on an insulating surface;
Wherein detecting the frequency of operation of the logic circuit, to determine the first mode or the second mode of the thin film transistor, and a detecting means for outputting a result of that the threshold control circuit,
Before SL threshold control circuit, the driving method of a semiconductor device and outputs a threshold control signal corresponding to said first mode or said second mode to said logic circuit.

A first logic circuit comprising a first thin film transistor and a second logic circuit comprising a second thin film transistor on an insulating surface;
The operation frequency of the first logic circuit is detected, the first mode or the second mode of the first thin film transistor is determined, the result is output to the first threshold control circuit, and the second Detecting means for detecting the operation frequency of the logic circuit, determining the first mode or the second mode of the second thin film transistor, and outputting the result to the second threshold control circuit,
The first threshold control circuit outputs a first threshold control signal corresponding to the first mode or the second mode of the first thin film transistor to the first logic circuit;
The second threshold control circuit outputs a second threshold control signal corresponding to the first mode or the second mode of the second thin film transistor to the second logic circuit;
The method for driving a semiconductor device, wherein the first threshold value control circuit and the second threshold value control circuit are controlled independently.

A logic circuit comprising a thin film transistor on an insulating surface;
Wherein detecting the operation frequency of the logic circuit, to determine the standby mode or active mode of the thin film transistor, and a detecting means for outputting a result of that the threshold control circuit,
When the pre-Symbol detection means determines the standby mode, the threshold control circuit, the threshold control signal to increase the threshold of the thin film transistor, a semiconductor device and outputs to the logic circuit Driving method.

A first logic circuit comprising a first thin film transistor and a second logic circuit comprising a second thin film transistor on an insulating surface;
The operation frequency of the first logic circuit is detected, the standby mode or the active mode of the first thin film transistor is determined, the result is output to the first threshold control circuit, and the second logic circuit Detecting means for detecting an operation frequency, determining a standby mode or an active mode of the second thin film transistor, and outputting the result to a second threshold control circuit;
When the detection means determines the standby mode of the first thin film transistor, the first threshold value control circuit outputs a first threshold value control signal for increasing the threshold value of the first thin film transistor, Output to the first logic circuit;
When the detection means determines the standby mode of the second thin film transistor, the second threshold control circuit outputs a second threshold control signal for increasing the threshold of the second thin film transistor, Output to the second logic circuit;
The method for driving a semiconductor device, wherein the first threshold value control circuit and the second threshold value control circuit are controlled independently.