JP2004319913A - Process for forming semiconductor film, process for manufacturing semiconductor device, integrated circuit, electro-optical device, and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a process for depositing an amorphous silicon film surely in a micropore regardless of its size and for forming an amorphous silicon film having a desired thickness. <P>SOLUTION: The process for forming a semiconductor film comprises a step for forming a micropore (14) in an insulating film (12) formed on a substrate (10), a first film deposition step for depositing a first non-single crystal semiconductor film (16) in the micropore (14) and on the insulating film (12), a step for removing the first non-single crystal semiconductor film (16) while leaving it in the micropore (14), a second film deposition step for depositing a second non-single crystal semiconductor film (18) above the micropore (14) and on the insulating film (12), and a step for forming a crystalline semiconductor film (20) through melt crystallization of the first and second non-single crystal semiconductor films. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for manufacturing a semiconductor thin film and a semiconductor device.
[0002]
[Prior art]
In order to improve the electrical characteristics of a thin film transistor used for a liquid crystal display device or an EL (electroluminescence) display device, a technique of forming a semiconductor thin film using a substantially single-crystal silicon film has been proposed (Non-Patent Document). 1). According to this technique, a fine hole is formed in an insulating film on a substrate, an amorphous silicon film is formed on the insulating film and in the fine hole, and then the amorphous silicon film is irradiated with a laser. While maintaining the amorphous silicon in the bottom of the hole in a non-molten state, the amorphous silicon film in the other part is brought into a molten state, so that the amorphous silicon held in the non-molten state becomes a crystal nucleus. Thus, a substantially single crystal silicon film is formed by causing the crystal growth.
[0003]
[Non-patent document 1]
"Single Crystal Thin Film Transistors", IBM TECHNICAL DISCLOSURE BULLETIN Aug. 1993 pp257-258
[Problems to be solved by the invention]
In the above-described method, when forming an amorphous silicon film on a substrate in which fine holes are formed, it is important to deposit an amorphous silicon film in the fine holes without gaps, and this demand has been achieved. Conventionally, an amorphous silicon film has been formed relatively thick. In particular, when the diameter of the fine holes is large, it is necessary to deposit an amorphous silicon film thicker. However, from the viewpoint of improving the characteristics of a semiconductor element (especially a thin film transistor), it is desired that the silicon film be made thinner.
[0004]
Therefore, an object of the present invention is to provide a technique capable of reliably depositing a semiconductor film in a fine hole and forming a thinner semiconductor film.
[0005]
[Means for Solving the Problems]
In order to achieve the above object, a method of manufacturing a semiconductor film according to the present invention comprises a micropore forming step of forming micropores in an insulating film formed on a substrate, and a first non-porous process in the micropores and on the insulating film. A first film forming step of forming a single crystal semiconductor film, and removing the first non-single-crystal semiconductor film formed in other portions while leaving the first non-single-crystal semiconductor film in the micropores A second film-forming step of forming a second non-single-crystal semiconductor film over the micropores and over the insulating film; and melting and crystallizing the first and second non-single-crystal semiconductor films to form a crystalline semiconductor. Melt crystallization for forming a film.
[0006]
According to the above method, the non-single-crystal semiconductor film formed on the insulating film in the first film-forming step has a non-single-crystal semiconductor film in the micropores in a subsequent removing step even if the film thickness is increased. Is removed, so that the non-single-crystal semiconductor film can be sufficiently deposited so that the fine holes are filled without gaps. Further, in the second film formation step, since the micropores are already filled without gaps, the non-single-crystal semiconductor film can be formed to have a desired thickness without any restrictions at the time of film formation. That is, according to the present invention, it is possible to achieve the conflicting demands of reliably depositing a semiconductor film in a fine hole and forming a thinner semiconductor film. By using the semiconductor film according to the present invention, it is possible to improve the characteristics of a semiconductor element (particularly, a thin film transistor) by thinning.
[0007]
In the above-described first film formation step, it is preferable to form the film so that the thickness of the first non-single-crystal semiconductor film is half or more of the diameter of the fine holes. Here, the pore diameter of the micropore means, for example, when the horizontal cross section of the micropore is circular, its diameter. In the first film forming step, for example, when a plasma enhanced chemical vapor deposition (PECVD) method or a low pressure chemical vapor deposition (LPCVD) method is used, the speed on the insulating film and the inner wall of the fine hole can be regarded as substantially the same. , A non-single-crystal semiconductor film is deposited. Therefore, if the film is formed so that the thickness of the non-single-crystal semiconductor film becomes half or more of the diameter of the fine hole, the inside of the fine hole can be sufficiently and sufficiently filled with the non-single-crystal semiconductor film.
[0008]
It is preferable that the second film formation step be performed so that the thickness of the second non-single-crystal semiconductor film is 600 ° or less. By using a crystalline semiconductor film having such a thickness, a semiconductor element with favorable electric characteristics can be obtained.
[0009]
The removal of the non-single-crystal semiconductor film in the above-described removal step is preferably performed by etch-back. Thus, the non-single-crystal semiconductor film can be removed with a uniform thickness over a wide area. Etchback can be performed by either dry etching or wet etching. As dry etching, Cl ₂ Gas, HBr gas, SF ₆ Reactive ion etching using an etching gas suitable for silicon etching such as a gas. According to the dry etching, it is possible to remove the film with high accuracy. As the wet etching, any of a dip method and a spin method can be used. According to the wet etching, the cost can be kept low, and the productivity can be improved.
[0010]
Further, the removal of the non-single-crystal semiconductor film in the removing step is also preferably performed by chemical mechanical polishing (CMP). According to this method, a very flat surface can be obtained.
[0011]
The method for manufacturing a semiconductor film of the present invention includes a micropore forming step of forming micropores in an insulating film formed on a substrate, and a film forming step of forming a non-single-crystal semiconductor film in the micropores and on the insulating film. A removing step of partially removing the non-single-crystal semiconductor film in the thickness direction to reduce the thickness, and a melt-crystallization step of melt-crystallizing the thinned non-single-crystal semiconductor film to form a crystalline semiconductor film. ,including.
[0012]
According to the above method, the non-single-crystal semiconductor film formed on the insulating film in the film formation step is partially removed in the film thickness direction in the subsequent thinning step, so that the inside of the fine hole is reduced in the film formation step. The non-single-crystal semiconductor film can be sufficiently deposited so as to be filled without gaps. Further, since the non-single-crystal semiconductor film over the insulating film can be formed to have a desired thickness in the removal step, characteristics of a semiconductor element (particularly, a thin film transistor) can be improved by thinning.
[0013]
Further, in the film formation step, it is preferable to form the film so that the thickness of the non-single-crystal semiconductor film is half or more of the diameter of the micropore. Thus, the inside of the fine hole can be sufficiently and sufficiently filled with the non-single-crystal semiconductor film.
[0014]
In the thinning step, the non-single-crystal semiconductor film is preferably removed so that the thickness of the non-single-crystal semiconductor film is 600 ° or less. By using a crystalline semiconductor film having such a thickness, a semiconductor element with favorable electric characteristics can be obtained. Note that the thinning step is preferably performed by etch back or chemical mechanical polishing (CMP). The advantages of adopting such a method are as described above.
[0015]
The present invention is also a method of manufacturing a semiconductor device including an element forming step of forming a semiconductor element using a crystalline semiconductor film manufactured by the above-described method of manufacturing a semiconductor film. Here, in the present invention, the “semiconductor device” refers to a device including the crystalline semiconductor film according to the present invention, and includes a transistor, a diode, a resistor, an inductor, a capacitor, and other single elements irrespective of active elements / passive elements. Including. By using the crystalline semiconductor film according to the present invention, a semiconductor device having excellent characteristics can be obtained.
[0016]
In the above-described method for manufacturing a semiconductor device, it is more preferable to form the semiconductor device using a portion of the crystalline semiconductor film that does not include micropores. A portion having slightly poor crystallinity may be formed in the vicinity of the fine hole. Therefore, when the semiconductor device is formed without including this portion, the characteristics of the semiconductor device can be further improved. In the above-described method for manufacturing a semiconductor device, in the case where a thin film transistor is formed as the semiconductor device, it is preferable to provide fine holes corresponding to positions where the thin film transistors are formed. This makes it possible to accurately select a region where a thin film transistor is to be formed and form a crystalline semiconductor film in the region.
[0017]
Further, the present invention is an integrated circuit including a semiconductor device manufactured by applying the above-described manufacturing method, an electro-optical device, and an electronic apparatus.
[0018]
Here, the “integrated circuit” refers to a circuit (chip) in which a semiconductor device and related wirings are integrated and wired so as to perform a certain function. In the present invention, it is also possible to provide a circuit board in which this circuit (chip) is arranged at one or more predetermined locations on the board.
[0019]
The present invention relates to an electro-optical device, comprising: a plurality of pixel regions; a semiconductor device provided for each pixel region; and an electro-optical element controlled by the semiconductor device. It is also manufactured by the manufacturing method described above.
[0020]
Here, the “electro-optical device” generally refers to a device having an electro-optical element that emits light by an electric action or changes the state of external light, and includes a semiconductor device according to the present invention. Includes both those that emit light and those that control the passage of external light. Examples of the electro-optical element include a liquid crystal element, an electrophoretic element having a dispersion medium in which electrophoretic particles are dispersed, an EL (electroluminescence) element, and an electron-emitting element that emits light by applying electrons generated by application of an electric field to a light-emitting plate. Active-matrix display device or the like.
[0021]
Here, “electronic equipment” refers to general equipment having a certain function provided with the semiconductor device according to the present invention, and includes, for example, an electro-optical device and a memory. Although the configuration is not particularly limited, for example, an IC card, a mobile phone, a video camera, a personal computer, a head-mounted display, a rear or front type projector, a facsimile apparatus with a display function, a finder of a digital camera, and a portable TV , A DSP device, a PDA, an electronic organizer, an electronic bulletin board, a display for advertising, and the like.
[0022]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0023]
<First embodiment>
FIG. 1 is a diagram illustrating a method for manufacturing a semiconductor film according to the first embodiment.
[0024]
(Micropore formation step)
First, as shown in FIG. 1A, a silicon oxide film 12 as an insulating film is formed on a substrate 10. Examples of a method for forming the silicon oxide film 12 on the substrate 10 include a physical vapor deposition method such as a plasma chemical vapor deposition method (PECVD method), a low-pressure chemical vapor deposition method (LPCVD method), or a sputtering method. . For example, the silicon oxide film 12 having a thickness of several 100 nm can be formed by a PECVD method.
[0025]
Next, as shown in FIG. 1A, fine holes 14 are formed at predetermined positions of the silicon oxide film 12. For example, by performing a photolithography step and an etching step, a fine hole 14 having a circular cross section can be opened at a predetermined position in the plane of the silicon oxide film 12. As an etching method, for example, CHF ₃ Reactive ion etching using gas plasma is exemplified.
[0026]
The micropores 14 serve to preferentially advance crystal growth using one crystal nucleus as a seed in a melt crystallization process described later, and may be referred to as a “grain filter”. The fine holes 14 are preferably formed in a cylindrical shape, for example, but may be formed in a shape other than the cylindrical shape (for example, a conical shape, a prism shape, a pyramid shape, etc.). Further, after forming a hole having a relatively large diameter (for example, about 500 nm), a new insulating film (silicon oxide film in this example) is deposited on the entire surface of the substrate and the diameter of the hole is reduced to form the fine hole 14. You may make it.
[0027]
(First film forming step)
Next, as shown in FIG. 1B, an amorphous silicon film 16 is formed in the fine holes 14 and on the silicon oxide film 12 as a first non-single-crystal semiconductor film. The amorphous silicon film 16 can be formed by PECVD, LPCVD, atmospheric pressure chemical vapor deposition (APCVD), sputtering, or the like.
[0028]
FIG. 2 is a diagram illustrating the first film forming step in more detail. After forming the fine holes 14 as shown in FIG. 2A, an amorphous silicon film 16 is deposited. At this time, as shown in FIG. 2B, when a film forming method (for example, an LPCVD method) in which a film is deposited on the silicon oxide film 12 and on the inner wall of the fine hole 14 at a speed that can be regarded as substantially the same, An amorphous silicon film 16 is formed to have substantially the same thickness on the silicon oxide film 12 and in the fine holes 14. Assuming that the thickness of the amorphous silicon film 16 is t and the hole diameter (diameter) of the fine holes 14 is L, if the film is formed so that t is equal to or more than 1/2 of L, FIG. As shown, the inside of the fine hole 14 can be filled with the amorphous silicon film 16 as necessary and sufficient.
[0029]
In this step, a polycrystalline silicon film may be formed instead of the amorphous silicon film.
[0030]
(Removal process)
Next, as shown in FIG. 1C, portions of the amorphous silicon film 16 other than those inside the micro holes 14 are removed by etch back. Etchback can be performed by, for example, dry etching. In particular, in etching a silicon film, Cl etching is performed. ₂ , HBr, SF ₆ Reactive ion etching using such as an etching gas is preferable. Further, the amorphous silicon film can be removed by wet etching or chemical mechanical polishing.
[0031]
In addition, when the amorphous silicon film 16 is deposited using the LPCVD method or the like in the first film forming step, a dent (recess) 22 is formed in the semiconductor film above the fine hole 14 as shown in FIG. In some cases, the effect of the heat treatment for melt crystallization is not uniform, and good crystallinity may not be obtained. However, according to the above method, since the amorphous silicon film 16 is removed by the removing step, the second amorphous silicon film 18 is deposited to a substantially uniform thickness in the next second film forming step. Can be. Therefore, there is an advantage that the effect of the heat treatment in the melt crystallization step is also uniform, and the melt crystallization can be suitably performed.
[0032]
(Second film formation step)
Subsequently, as shown in FIG. 1D, an amorphous silicon film 18 as a second non-single-crystal semiconductor film is formed on the fine holes 14 filled with the amorphous silicon film 16 and on the silicon oxide film 12. To form This amorphous silicon film 18 is preferably formed by, for example, PECVD or LPCVD. Since it is not necessary to consider that the amorphous silicon film 18 is deposited without any gaps in the fine holes 14, the amorphous silicon film 18 can be formed to a desired thickness. In order to improve the electrical characteristics of a semiconductor element formed in an element forming step described later, it is preferable that the thickness of the amorphous silicon film 18 be 600 ° or less.
[0033]
Note that a polycrystalline silicon film may be used instead of the amorphous silicon film as the non-single-crystal semiconductor film.
[0034]
(Melting crystallization process)
Next, as shown in FIG. 1E, laser irradiation is performed to melt-crystallize the amorphous silicon film 18 and the amorphous silicon film 16 in the fine holes 14. For example, using an XeCl pulse excimer laser (wavelength 308 nm, pulse width 30 nsec), energy density: 0.4 to 1.5 J / cm ² By performing the laser irradiation, partial melting can be achieved. Note that a solid laser, a gas laser, or the like may be used instead of the excimer laser.
[0035]
Here, most of the irradiated XeCl pulse excimer laser is absorbed in the vicinity of the surface of the amorphous silicon film 18. This is because the absorption coefficients of amorphous silicon and crystalline silicon at the wavelength (308 nm) of the XeCl pulse excimer laser are 0.139 nm, respectively. ^-1 And 0.149 nm ^-1 Because it is big. Further, the silicon oxide film 12 is substantially transparent to the laser and does not absorb the energy of the laser, so that the silicon oxide film 12 is not melted by the laser irradiation. Thus, the amorphous silicon film 18 in the region other than the fine holes 14 is almost completely melted over the entire region in the thickness direction. Further, the surface of the amorphous silicon film 16 in the fine hole 14 is melted, and is not melted at the bottom of the fine hole 14 (partially melted state).
[0036]
The solidification of silicon after the laser irradiation starts first inside the micropores 14 and thereafter reaches a portion (surface portion) of the amorphous silicon film 18 in a substantially completely molten state. At this time, some crystal grains are generated in the vicinity of the bottom of the fine hole 14. However, the cross-sectional dimension (the diameter of a circle in the present embodiment) of the fine hole 14 is set to be about the same as or slightly smaller than one crystal grain. By doing so, only one crystal grain reaches the upper part (opening) of the fine hole 14. Thus, in the substantially completely melted portion of the amorphous silicon film 18, crystal growth proceeds with one crystal grain reaching the upper part of the fine hole 14 as a nucleus, as shown in FIG. Then, a silicon film (crystalline silicon film) 20 in a substantially single crystal state is formed in a region having the fine hole 14 substantially at the center. In this embodiment, “substantially single crystal” means not only a single crystal grain but also a state close to the single crystal grain, that is, a small number of crystals even when a plurality of crystals are combined. From the viewpoint of the above, the case where the semiconductor thin film has substantially the same properties as a semiconductor thin film formed of a single crystal is also included.
[0037]
The crystalline silicon film (crystalline semiconductor film) 20 has an effect that the number of defects is small inside and the trap level density near the center of the forbidden band in the energy band is reduced in terms of the electrical characteristics of the semiconductor film. In addition, since it can be considered that there is almost no crystal grain boundary, an effect of greatly reducing a barrier when carriers such as electrons and holes flow can be obtained. When this crystalline silicon film 20 is used as an active layer (source / drain region or channel formation region) of a thin film transistor, an excellent thin film transistor having a small off-current value and a large mobility can be obtained.
[0038]
(Element formation step)
Next, a process of forming a semiconductor element using the crystalline semiconductor film 20 manufactured by the above-described manufacturing method will be described using a thin film transistor as an example.
[0039]
FIG. 3 is a diagram illustrating an element forming step. First, as shown in FIG. 3A, the crystalline semiconductor film 20 is patterned, and portions unnecessary for forming a thin film transistor are removed and shaped.
[0040]
Next, as shown in FIG. 3B, a silicon oxide film 24 is formed on the silicon oxide film 12 and the crystalline silicon film 20. For example, the silicon oxide film 24 can be formed by electron cyclotron resonance PECVD (ECR-CVD) or PECVD. This silicon oxide film 24 functions as a gate insulating film of the thin film transistor.
[0041]
Next, as shown in FIG. 3C, a gate electrode 26 is formed by forming a metal thin film of tantalum or aluminum by a sputtering method and then patterning. Next, using the gate electrode 26 as a mask, impurity ions serving as donors or acceptors are implanted, and a source / drain region 28 and a channel forming region 30 are formed in a self-aligned manner with respect to the gate electrode 26. In the case of manufacturing an NMOS transistor, for example, phosphorus (P) is used as an impurity element at 1 × 10 ¹⁶ cm ^-2 Is implanted into the source / drain regions at a concentration of Thereafter, a XeCl excimer laser is irradiated at an irradiation energy density of 400 mJ / cm. ² The impurity element is activated by irradiating at a temperature of about 250 ° C. or performing heat treatment at a temperature of about 250 ° C. to 450 ° C.
[0042]
Next, as shown in FIG. 3D, a silicon oxide film 32 is formed on the upper surfaces of the silicon oxide film 24 and the gate electrode 26. For example, a silicon oxide film 32 of about 500 nm is formed by PECVD. Next, a contact hole reaching the source / drain region 28 is opened in the silicon oxide films 24 and 32, and a source / drain electrode 34 is formed in the contact hole and on the peripheral portion of the contact hole on the silicon oxide film 32. The source / drain electrodes 34 may be formed by depositing aluminum by, for example, a sputtering method. Further, a contact hole reaching the gate electrode 26 is opened in the silicon oxide film 32 to form a terminal electrode for the gate electrode 26. Thus, a thin film transistor T as a semiconductor device according to the present invention can be manufactured.
[0043]
In the example shown in FIG. 3, for convenience of explanation, the fine holes 14 are illustrated to be located directly below the thin film transistors. However, it is also preferable that the formation positions of the fine holes 14 be removed from immediately below the thin film transistors T. is there. In this case, in the patterning step described with reference to FIG. 3A, the formation position of the fine hole 14 may be removed when patterning a portion to be the active region 30 or the like of the thin film transistor T.
[0044]
As described above, in the first embodiment, the amorphous silicon film 16 formed in the first film forming step is removed in the removing step while leaving the amorphous silicon film 16 in the fine holes. A new amorphous silicon film 18 is formed in the film forming step. Thus, the amorphous silicon film 16 can be reliably deposited in the fine holes 14 and the thickness of the amorphous silicon film 18 can be reduced, and the semiconductor device manufactured using the amorphous silicon film 18 can be manufactured. Can be improved. In addition, the amorphous silicon film 18 can be formed to have a uniform thickness regardless of the presence or absence of the fine holes 14. Thereby, the effect of the heat treatment at the time of melt crystallization is also uniform, and there is an advantage that melt crystallization can be suitably performed.
[0045]
<Second embodiment>
FIG. 4 is a diagram illustrating a method for manufacturing a semiconductor film according to the second embodiment. In the following description, the description that overlaps with the manufacturing method of the above-described first embodiment will be omitted as appropriate.
[0046]
(Micropore formation step)
First, as shown in FIG. 4A, a silicon oxide film 12 as an insulating film is formed on a substrate 10, and fine holes 14 are formed at predetermined positions in the silicon oxide film 12. Various conditions for forming the silicon oxide film 12 and the fine holes 14 are the same as those in the first embodiment described above.
[0047]
(Deposition process)
Subsequently, as shown in FIG. 4B, an amorphous silicon film 16 is formed as a non-single-crystal semiconductor film on the silicon oxide film 12 and in the fine holes 14. Various conditions in this step are the same as those in the first embodiment. By setting the thickness of the amorphous silicon film 16 to be at least half the diameter of the fine holes 14, the inside of the fine holes 14 can be filled with the amorphous silicon film 16 without gaps.
[0048]
(Removal process)
Next, as shown in FIG. 4C, the amorphous silicon film 16 is partially removed to make the amorphous silicon film 16 thinner. Since the amorphous silicon film is removed in a uniform thickness in the film thickness direction over a wide region of the amorphous silicon film, wet etching is preferable. As the wet etching, any of a dip method and a spin method can be used, and as a chemical solution, hydrofluoric acid, nitric acid (HNO ₃ ) And glacial acetic acid with iodine (CH ₃ COOH + I ₂ And the like. Further, the amorphous silicon film 16 may be partially removed by dry etching or chemical mechanical polishing.
[0049]
Thereby, the amorphous silicon film 16 can be formed to a desired thickness regardless of the size of the fine holes. In order to improve the electrical characteristics of the semiconductor element formed in the element forming step, it is preferable that the thickness of the amorphous silicon film 16 be 600 ° or less.
[0050]
In addition, in the film forming step, a concave portion 22 (see FIG. 2C) may be formed on the fine hole 14. In such a case, the amorphous silicon is removed so that the concave portion 22 is eliminated in this step. By removing the film 16, the amorphous silicon film 16 can have a substantially uniform thickness. Thereby, there is also an advantage that homogeneous melt crystallization can be performed.
[0051]
Note that a polycrystalline silicon film may be used instead of the amorphous silicon film as the non-single-crystal semiconductor film.
[0052]
(Melting crystallization process)
Next, as shown in FIG. 4D, the amorphous silicon film 16 is melt-crystallized by performing laser irradiation. Suitable conditions for laser irradiation are also as described above. As a result, as shown in FIG. 4E, a silicon film (crystalline silicon film) 20 in a substantially single crystal state is formed in a region substantially centered on the fine hole 14.
[0053]
(Element formation step)
Next, a thin film transistor is formed using the crystalline silicon film 20. The specific contents are the same as in the above-described first embodiment, and a description thereof will be omitted.
[0054]
As described above, in the second embodiment, the amorphous silicon film 16 formed in the film forming step is partially removed, so that the amorphous silicon film is thin regardless of the size of the fine holes 14. As a result, the electrical characteristics of the semiconductor film can be improved. Further, in this embodiment, since the amorphous silicon film 16 can be formed to have a thickness that can be regarded as uniform, the irradiation amount of the laser beam becomes uniform during the melt crystallization, so that the uniform crystalline silicon film 16 is obtained. There is also an advantage that 20 can be obtained. Further, since only one film forming process is required, there is an advantage that cost can be reduced in terms of material consumption.
[0055]
<Third embodiment>
The third embodiment of the present invention relates to an electro-optical device including a semiconductor device manufactured by the method of manufacturing a semiconductor device of the present invention.
[0056]
FIG. 5 shows a connection diagram of the electro-optical (display) device 100 according to the third embodiment. The display device 100 of the present embodiment includes a light emitting layer OELD capable of emitting light by the electroluminescent effect in each pixel region, a storage capacitor for storing a current for driving the light emitting layer OELD, and further manufactured by the manufacturing method of the present invention. The semiconductor device, here, includes thin film transistors T1 to T4. From the driver area 101, a scanning line Vsel and a light emission control line Vgp are supplied to each pixel area. From the driver region 102, a data line Idata and a power supply line Vdd are supplied to each pixel region. By controlling the scanning line Vsel and the data line Idata, current programming is performed for each pixel region, and light emission by the light emitting unit OELD can be controlled.
[0057]
Note that the above driving circuit is an example of a circuit when an electroluminescent element is used as a light emitting element, and other circuit configurations are possible. It is also preferable that the integrated circuits forming each of the driver regions 101 and 102 be formed by the semiconductor device according to the present invention.
[0058]
<Fourth embodiment>
The fourth embodiment relates to an electronic apparatus including a semiconductor device manufactured by the method for manufacturing a semiconductor device of the present invention.
[0059]
FIG. 6 shows an example of an electronic device according to the fourth embodiment. FIG. 6A illustrates an example of a mobile phone on which a semiconductor device or the like manufactured by the manufacturing method of the present invention is mounted. The mobile phone 230 includes an electro-optical device (display panel) 100, an antenna unit 231, an audio output. A section 232, a voice input section 233 and an operation section 234 are provided. The method for manufacturing a semiconductor device of the present invention is applied to, for example, manufacturing of a semiconductor device provided in the display panel 100 or an integrated circuit incorporated therein. FIG. 6B shows an example of a video camera on which a semiconductor device or the like manufactured by the manufacturing method of the present invention is mounted. The video camera 240 includes an electro-optical device (display panel) 100, an image receiving unit 241, and an operation unit. 242 and a voice input unit 243. The method for manufacturing a semiconductor device of the present invention is applied to, for example, manufacturing of a semiconductor device provided in the display panel 100 or an integrated circuit incorporated therein.
[0060]
FIG. 6C illustrates an example of a portable personal computer on which a semiconductor device or the like manufactured by the manufacturing method of the present invention is mounted. The computer 250 includes an electro-optical device (display panel) 100, a camera unit 251 and an operation unit. A portion 252 is provided. The method for manufacturing a semiconductor device of the present invention is applied to, for example, manufacturing of a semiconductor device provided in the display panel 100 or an integrated circuit incorporated therein. FIG. 6D shows an example of a head-mounted display on which a semiconductor device or the like manufactured by the manufacturing method of the present invention is mounted. The head-mounted display 260 includes an electro-optical device (display panel) 100, a band unit 261 and An optical system storage section 262 is provided. The method for manufacturing a semiconductor device of the present invention is applied to, for example, manufacturing of a semiconductor device provided in the display panel 100 or an integrated circuit incorporated therein.
[0061]
FIG. 6E shows an example of a rear-type projector on which a semiconductor device or the like manufactured by the manufacturing method of the present invention is mounted. The projector 270 includes an electro-optical device (light modulator) 100, a light source 272, and synthetic optics. A system 273 and mirrors 274 and 275 are provided in the housing 271. The method of manufacturing a semiconductor device according to the present invention is applied to, for example, manufacturing of a semiconductor device provided in the optical modulator 100 or a built-in circuit. FIG. 6F shows an example of a front-type projector on which a semiconductor device or the like manufactured by the manufacturing method of the present invention is mounted. An image can be displayed on the screen 283 provided in the body 282. The method for manufacturing a semiconductor device of the present invention is applied to, for example, manufacturing of a semiconductor device provided in the image display source 100 or an integrated circuit incorporated therein.
[0062]
The method for manufacturing a semiconductor device according to the present invention is not limited to the above example, and can be applied to the manufacture of any electronic device. For example, in addition to the above, the present invention can be applied to a fax device with a display function, a finder of a digital camera, a portable TV, a DSP device, a PDA, an electronic organizer, an electronic bulletin board, a display for advertising, an IC card and the like.
[0063]
The present invention is not limited to the above-described embodiments, and various modifications and changes can be made within the scope of the present invention. For example, in the above-described embodiment, a silicon film has been described as an example of the semiconductor film, but the semiconductor film is not limited to this. Further, in the above-described embodiment, a thin film transistor has been described as an example of a semiconductor element formed using the crystalline semiconductor film according to the present invention. However, the semiconductor element is not limited to this. (For example, a thin film diode) may be formed.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating a method for manufacturing a semiconductor film according to a first embodiment.
FIG. 2 is a diagram illustrating a film forming process.
FIG. 3 is a diagram illustrating a method for manufacturing a semiconductor device (thin film transistor).
FIG. 4 is a diagram illustrating a method for manufacturing a semiconductor film according to a second embodiment.
FIG. 5 is a connection diagram of an electro-optical device according to a third embodiment.
FIG. 6 is a diagram illustrating an example of an electronic device according to a fourth embodiment.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 ... Substrate, 12, 24, 32 ... Silicon oxide film, 14 ... Micropore, 16 ... Amorphous silicon film, 18 ... Amorphous silicon film, 20 ... Crystalline silicon film (substantially single crystal silicon film) Reference Signs List 22, concave portion, 26, gate electrode, 28, source / drain region, 30, channel forming region, 34, source / drain electrode, 100, electro-optical device, T, thin film transistor

Claims (10)

A micropore forming step of forming micropores in the insulating film formed on the substrate,
A first film forming step of forming a first non-single-crystal semiconductor film in the micropores and on the insulating film;
A removing step of leaving the first non-single-crystal semiconductor film in the micropores and removing the first non-single-crystal semiconductor film formed in other portions;
A second film forming step of forming a second non-single-crystal semiconductor film over the fine holes and over the insulating film;
A melt crystallization step of melt-crystallizing the first and second non-single-crystal semiconductor films to form a crystalline semiconductor film;
A method for manufacturing a semiconductor film, comprising: 2. The semiconductor film according to claim 1, wherein, in the first film forming step, the film is formed such that a film thickness of the first non-single-crystal semiconductor film is half or more of a diameter of the micropore. 3. Production method. 3. The method of manufacturing a semiconductor film according to claim 1, wherein in the second film forming step, the film is formed such that the film thickness of the second non-single-crystal semiconductor film is 600 ° or less. 4. 4. The method of manufacturing a semiconductor film according to claim 1, wherein said removing step is performed by etch-back. 4. The method according to claim 1, wherein the removing step is performed by chemical mechanical polishing. 5. A micropore forming step of forming micropores in the insulating film formed on the substrate,
A film forming step of forming a non-single-crystal semiconductor film in the micropores and on the insulating film;
A thinning step of thinning the non-single-crystal semiconductor film,
A melt crystallization step of melt-crystallizing the thinned non-single-crystal semiconductor film to form a crystalline semiconductor film;
A method for manufacturing a semiconductor film, comprising: A method for manufacturing a semiconductor device, comprising: an element forming step of forming a semiconductor element using the crystalline semiconductor film manufactured by the method for manufacturing a semiconductor film according to claim 1. An integrated circuit comprising a semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 7. An electro-optical device comprising a semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 7. An electronic apparatus comprising a semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 7.

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