JP2004319684A5 - - Google Patents
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- Publication number
- JP2004319684A5 JP2004319684A5 JP2003110251A JP2003110251A JP2004319684A5 JP 2004319684 A5 JP2004319684 A5 JP 2004319684A5 JP 2003110251 A JP2003110251 A JP 2003110251A JP 2003110251 A JP2003110251 A JP 2003110251A JP 2004319684 A5 JP2004319684 A5 JP 2004319684A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003110251A JP4094471B2 (ja) | 2003-04-15 | 2003-04-15 | 半導体受光装置 |
| CNB2004100343830A CN1330004C (zh) | 2003-04-15 | 2004-04-15 | 半导体光接收器件及其制造方法 |
| US10/824,540 US7309884B2 (en) | 2003-04-15 | 2004-04-15 | Semiconductor light receiving device and method of fabricating the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003110251A JP4094471B2 (ja) | 2003-04-15 | 2003-04-15 | 半導体受光装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004319684A JP2004319684A (ja) | 2004-11-11 |
| JP2004319684A5 true JP2004319684A5 (ja) | 2006-03-02 |
| JP4094471B2 JP4094471B2 (ja) | 2008-06-04 |
Family
ID=33471162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003110251A Expired - Fee Related JP4094471B2 (ja) | 2003-04-15 | 2003-04-15 | 半導体受光装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7309884B2 (ja) |
| JP (1) | JP4094471B2 (ja) |
| CN (1) | CN1330004C (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008066497A (ja) * | 2006-09-07 | 2008-03-21 | Sony Corp | 受光装置および受光装置の製造方法 |
| US8288253B1 (en) * | 2011-06-30 | 2012-10-16 | M/A-Com Technology Solutions Holdings, Inc. | InxGa1-xAsYP1-Y quaternary etch stop for improved chemical resistivity of gallium arsenide field effect transistors |
| US9431572B2 (en) * | 2012-08-02 | 2016-08-30 | Quantum Electro Opto Systems Sdn. Bhd. | Dual mode tilted-charge devices and methods |
| US20150221523A1 (en) * | 2013-10-01 | 2015-08-06 | Infineon Technologies Ag | Arrangement and method for manufacturing the same |
| US9871208B2 (en) * | 2014-02-26 | 2018-01-16 | Samsung Display Co., Ltd. | Condensed cyclic compound and organic light-emitting device including the same |
| US20210104638A1 (en) * | 2019-10-04 | 2021-04-08 | Sensors Unlimited, Inc. | Visible-swir hyper spectral photodetectors with reduced dark current |
| CN114792738A (zh) * | 2021-01-26 | 2022-07-26 | 朗美通日本株式会社 | 半导体光接收元件 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02231775A (ja) | 1989-03-03 | 1990-09-13 | Fujitsu Ltd | 化合物半導体受光素子 |
| JP2860695B2 (ja) | 1990-06-07 | 1999-02-24 | 光計測技術開発株式会社 | 受光素子 |
| US6177710B1 (en) * | 1996-06-13 | 2001-01-23 | The Furukawa Electric Co., Ltd. | Semiconductor waveguide type photodetector and method for manufacturing the same |
| JP2000077702A (ja) * | 1998-08-31 | 2000-03-14 | Oki Electric Ind Co Ltd | 半導体受光素子、半導体受光素子の製造方法および受光素子モジュール |
| JP2002050785A (ja) * | 2000-08-01 | 2002-02-15 | Sumitomo Electric Ind Ltd | 半導体受光素子 |
| FR2832223B1 (fr) * | 2001-11-15 | 2005-01-14 | Cit Alcatel | Composant monolithique electro-optique multisections |
-
2003
- 2003-04-15 JP JP2003110251A patent/JP4094471B2/ja not_active Expired - Fee Related
-
2004
- 2004-04-15 CN CNB2004100343830A patent/CN1330004C/zh not_active Expired - Fee Related
- 2004-04-15 US US10/824,540 patent/US7309884B2/en not_active Expired - Fee Related