JP2004311689A - Method and apparatus for substrate treatment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce the amount of a treatment gas used and improve the uniformity of the treatment in film formation conducted under a reduced pressure. <P>SOLUTION: The prescribed amount of the treatment gas is stored in gas storages 23a and 23b in advance, and when a wafer W is treated, exhausting from a treatment container 2 is suspended and the treatment container 2 is filled with the prescribed amount of the treatment gas. Then, supply of the treatment gas is stopped, and with the treatment container 2 closed tightly, a film is formed on the wafer W by plasma using the treatment gas. Unlike the conventional treatment wherein a treatment is carried out with the treatment gas being kept flowing, a gas flow profile is never biased and a uniform treatment is available in a plane of the wafer. Moreover, a desired film can be formed with a minimum amount of the treatment gas. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a substrate processing method and a substrate processing apparatus.
[0002]
[Prior art]
For example, in a semiconductor device manufacturing process, a film forming process for forming a conductive film or an insulating film on a surface of a semiconductor wafer (hereinafter, referred to as a “wafer”) under reduced pressure, or a film formed on a wafer. Etching processing for etching the surface is performed.
[0003]
For example, the film forming process is performed by a plasma processing apparatus provided with a process container that can be closed. In the film forming process, a wafer is accommodated in a processing vessel that has been depressurized conventionally, and then a processing gas is supplied into the processing vessel, the processing vessel is evacuated, and a gas flow of the processing gas is formed in the processing vessel. I was Then, in a state where the gas flow is formed, plasma of the processing gas is generated in the processing chamber, and a film is deposited on the surface of the wafer by the plasma to form a film (for example, see Patent Document 1). .
[0004]
[Patent Document 1]
JP 2001-156004 A
[0005]
[Problems to be solved by the invention]
However, according to the film forming process, since the gas flow of the processing gas is always formed in the processing container, the uneven pressure distribution of the processing gas is generated in the processing container due to the shape of the processing container. And a flow velocity distribution is formed. As a result, the deposition of the film on the surface of the wafer is not performed uniformly on the surface of the wafer, and a uniform film forming process is not performed. In particular, in recent years, as the diameter of a wafer has become larger, the non-uniformity of processing within the wafer surface has become remarkable, and it is urgently desired to improve this.
[0006]
In addition, in the above-described film forming process, most of the processing gas introduced into the processing container is immediately exhausted from the processing container. Therefore, the processing gas that actually contributes to the film forming process is a part of the total introduced amount. It was not too much. As described above, a large amount of the processing gas is introduced wastefully, and the consumption amount of the processing gas is increased.
[0007]
In the above-described film forming process, it is necessary to maintain the inside of the processing container at a predetermined degree of pressure while supplying the processing gas into the processing container, so that the supply flow rate of the processing gas needs to be strictly controlled. For this reason, a complicated flow control device is required in the processing gas supply system, and the overall structure of the plasma processing apparatus has become complicated or large.
[0008]
Further, in the above-described film forming process, a new process gas is constantly supplied onto the wafer, so that the film thickness on the wafer increases with time. Therefore, in the film forming process, the supply time of the processing gas is controlled in order to form a film having a desired thickness on the wafer. However, in practice, the state of the gas flow is unstable, and the amount of gas supplied to the wafer within a predetermined time is slightly different each time. Therefore, it is difficult to strictly control the thickness of the film formed on the wafer. was difficult. In addition, if strict control is attempted, the supply system of the processing gas is complicated.
[0009]
The present invention has been made in view of such a point, and a substrate such as a wafer capable of performing a more uniform film forming process or the like with a simpler apparatus using a minimum necessary processing gas. It is an object of the present invention to provide a processing method and a processing apparatus therefor.
[0010]
[Means for Solving the Problems]
To achieve the above object, a substrate processing method according to the present invention is a processing method for processing a substrate by supplying a processing gas into a processing container, wherein the substrate is accommodated in a processing container reduced to a predetermined pressure. And then filling the processing container with a predetermined amount of processing gas set in advance, and sealing the inside of the processing container with the predetermined amount of processing gas filled. The method includes a step of processing the substrate with the processing gas, and a step of exhausting the inside of the processing container after the processing is completed. The processing gas may be one that directly reacts with the substrate to treat the substrate, or one that directly reacts with the substrate after obtaining and changing energy to treat the substrate, such as a carrier gas that does not directly react with the substrate. And those that carry reactive gases.
[0011]
According to the present invention, the processing of the substrate using the processing gas in the processing container is performed without airflow. Therefore, uneven distribution of the processing gas is not generated in the processing container, and the processing gas is uniformly supplied in the substrate surface, so that uniform processing is performed in the substrate surface. In addition, since the processing is performed with a necessary and sufficient gas amount set in advance, the consumption of the processing gas can be minimized. In addition, since a predetermined amount of the processing gas is supplied into the processing container, for example, by storing the processing gas of the amount in the storage container and transferring the processing gas from the storage container to the processing container as appropriate, A processing gas can be supplied into the processing container. Therefore, a complicated flow control device as in the related art is not required, and the configuration of the apparatus for performing the substrate processing can be simplified. Further, since an appropriate amount of processing gas set in advance is supplied into the processing container, excessive processing is not performed without strictly controlling the processing time. Also in this respect, a complicated time control mechanism is not required, and the apparatus can be simplified.
[0012]
In the method for processing a substrate according to the present invention, the predetermined pressure in the processing container before the filling of the processing gas is set so that the inside of the processing container becomes a preset processing pressure by filling the predetermined amount of the processing gas. It may be. In such a case, even if the processing gas is charged, the substrate can be processed at a desired processing pressure suitable for processing the substrate.
[0013]
In the substrate processing method of the present invention, when a plurality of types of processing gases are filled in the processing container, the plurality of types of processing gases are mixed in a mixing container and then filled in the processing container. It may be. In such a case, after a plurality of types of processing gases are evenly mixed, for example, processing of the substrate using the processing gas can be performed, so that processing without spots in the substrate surface is performed.
[0014]
In the method for processing a substrate according to the present invention, when the processing container is filled with a plurality of types of processing gases, the processing gas is charged into the processing container after the plurality of types of processing gases are charged into the processing container. May be included in the process. Also in such a case, the substrate processing can be performed with the processing gas after a plurality of types of processing gases are sufficiently mixed, so that the substrate processing is properly performed.
[0015]
At least one of the processing container and the substrate may be heated or cooled so as to provide a temperature difference between the processing container and the substrate accommodated in the processing container. This causes a slight convection in the processing vessel. By this convection, the processing gas on the substrate surface is agitated, for example, the gas before and after the reaction on the substrate surface is replaced, and the substrate processing using the processing gas is suitably performed.
[0016]
The processing of the substrate performed in the processing container in the processing method of the substrate may be a plasma processing of processing the substrate by generating a plasma of a processing gas filled in the processing container, and forming a film on the substrate. It may be a film forming process.
[0017]
The substrate processing apparatus according to the present invention is a processing apparatus for supplying a processing gas into a sealable processing container and processing the substrate in the processing container under reduced pressure, and for supplying the processing gas into the processing container. A gas supply mechanism, an exhaust mechanism for depressurizing and exhausting the inside of the processing container, and a predetermined amount of gas set in the processing container by the gas supply mechanism in a state where the exhaust by the exhaust mechanism is stopped. A control unit that controls the gas exhaust mechanism and the gas exhaust mechanism so as to supply a processing gas and thereafter stop the air supply by the gas air supply mechanism to seal the inside of the processing container. And
[0018]
According to the present invention, a predetermined amount of the processing gas is supplied into the processing container and the processing container is sealed, so that the substrate can be processed without a gas flow in the processing container. Therefore, unlike the conventional case, uneven distribution of the processing gas is not generated in the processing container, and the processing of the substrate is performed uniformly in the substrate surface. Since the processing gas is not dripped, the consumption of the processing gas can be reduced. Since a predetermined amount of processing gas prepared in advance can be introduced into the processing container, a flow control device is not required, and the apparatus can be simplified. Since an appropriate amount of processing gas is supplied without excess or deficiency, desired processing of the substrate can be realized without strictly controlling the processing time as in the related art.
[0019]
The gas supply mechanism includes a gas supply source of the processing gas, a gas storage container that communicates with the gas supply source, and stores the predetermined amount of the processing gas supplied from the gas supply source, and a gas storage container. A gas supply pipe for supplying the processing gas to the processing container, and an air supply valve provided in the gas supply pipe, and the gas supply mechanism opens the air supply valve to open the air supply valve. The predetermined amount of the processing gas stored in the gas storage container may be configured to be supplied into the processing container. In this case, a predetermined amount of the processing gas is stored in the gas storage container in advance, and the processing gas can be supplied from the gas storage container into the processing container during the processing of the substrate. By doing so, a predetermined amount of the processing gas is filled in the processing container, and the processing of the substrate can be performed in a state where the processing gas is charged.
[0020]
The substrate processing apparatus of the present invention is a processing apparatus for supplying a processing gas into a hermetically sealable processing container and processing the substrate in the processing container under reduced pressure. A gas storage container that communicates with a gas supply source and stores a predetermined amount of processing gas supplied from the gas supply source, and a gas supply for supplying the processing gas from the gas storage container to the processing container. A gas supply pipe provided with an air supply valve, and by opening the air supply valve, the predetermined amount of the processing gas stored in the gas storage container is supplied to the processing container. It is characterized in that it is configured to be filled inside.
[0021]
According to the present invention, a predetermined amount of the processing gas can be stored in the gas storage container, and the predetermined amount of the processing gas can be filled in the processing container. Therefore, a conventional flow control device is not required to supply the processing gas into the processing container, and the apparatus can be simplified. Further, in a processing container filled with a predetermined amount of processing gas, the substrate can be processed in a state where the processing gas is charged. In such a case, since the processing of the substrate is performed in a state where there is no gas flow in the processing container as in the related art, there is no uneven distribution of the processing gas, and uniform processing can be performed in the substrate surface. Further, since the processing of the substrate is performed with a predetermined amount of the processing gas, the consumption of the processing gas can be reduced as compared with the conventional case where the processing gas is continuously supplied. Further, by supplying an appropriate amount of processing gas into the processing container, desired processing is realized.
[0022]
The substrate processing apparatus includes a gas pipe for supplying a processing gas from the gas supply source to the gas storage vessel, a pipe valve provided in the gas pipe, and a pressure for measuring a pressure in the gas storage vessel. And a valve control unit that outputs a measurement result of the pressure gauge and controls opening and closing of the piping valve based on the measurement result. In such a case, a predetermined amount of the processing gas can be stored in the gas storage container by controlling the valve while observing the measurement value of the pressure gauge.
[0023]
There are a plurality of types of the processing gas, and the gas storage container is provided for each type of the processing gas. Before the processing gas from each of the gas storage containers is supplied to the processing container, the processing gas is removed. A mixing container for mixing may be provided. In such a case, since a plurality of types of processing gases are uniformly mixed and then supplied to the processing container, the processing using the processing gas in the processing container is properly performed. The substrate processing apparatus may further include a temperature adjusting member for providing a temperature difference between the processing container and the substrate in the processing container. In this case, a slight convection occurs in the processing container, and the processing gas in the processing container can be stirred. As a result, for example, the gas before and after the reaction is exchanged on the substrate surface, and the substrate processing using the processing gas is efficiently performed.
[0024]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described. FIG. 1 schematically shows a longitudinal section of a plasma processing apparatus 1 as a substrate processing apparatus on which a substrate processing method of the present invention is performed.
[0025]
The plasma processing apparatus 1 is made of, for example, an aluminum alloy. The plasma processing apparatus 1 includes a substantially cylindrical processing vessel 2 having an opening in a ceiling. This processing container 2 is grounded. At the bottom of the processing container 2, for example, a susceptor 3 for mounting a wafer W is provided. In the susceptor 3, the heater 5 in the susceptor 3 generates heat by power supply from an AC power supply 4 provided outside the processing container 2, and the wafer W on the susceptor 3 can be heated to a predetermined temperature.
[0026]
An exhaust port 7 for exhausting the inside of the processing container 2 is provided at, for example, two places at the bottom of the processing container 2. The exhaust port 7 is connected to an exhaust pipe 9 leading to an exhaust device 8 such as a turbo molecular pump. The exhaust pipe 9 is provided with an exhaust valve 10 for temporarily stopping the exhaust. The exhaust from the exhaust port 7 can reduce the pressure inside the processing container 2 to a predetermined pressure. In this embodiment, the exhaust port 7, the exhaust device 8, the exhaust pipe 9, and the exhaust valve 10 constitute an exhaust mechanism.
[0027]
A gas supply port 20 for supplying a processing gas into the processing container 2 is provided at an upper portion of a side wall of the processing container 2. The gas supply port 20 communicates with, for example, two gas supply sources 21a and 21b installed outside the processing container 2 as shown in FIG. In the present embodiment, the gas supply source 21a is filled with oxygen gas, and the gas supply source 21b is filled with argon gas as an inert gas. Accordingly, the processing vessel 2 is supplied with two types of processing gases, oxygen gas and argon gas.
[0028]
The gas supply source 21a is connected to a gas storage container 23a through, for example, a gas pipe 22a. The gas pipe 22a is provided with a valve 24a as a pipe valve. By opening the valve 24a, the oxygen gas from the gas supply source 21a can be supplied to the gas storage container 23a. Similarly to the gas supply source 21a, the gas supply source 21b is connected to the gas storage container 23b through the gas piping 22b, and the gas piping 22b is provided with a valve 24b as a piping valve.
[0029]
For example, a gas supply pipe 25 communicating with the gas supply port 20 of the processing container 2 is connected to each of the gas storage containers 23a and 23b. The gas supply pipe 25 joins on the way from the gas storage vessels 23a and 23b to the processing vessel 2, and different types of processing gases flowing out of the gas storage vessels 23a and 23b are mixed on the way and are processed. It is being introduced into. An air supply valve 26 is provided on the downstream side of the junction of the gas supply pipe 25, and the processing gas in the gas storage containers 23 a and 23 b is supplied into the processing container 2 by opening the air supply valve 26. You.
[0030]
Each of the gas storage containers 23a and 23b has a storage chamber of a predetermined volume that can be sealed. The gas storage containers 23a and 23b are provided with pressure gauges 27a and 27b for measuring the pressure in the storage chamber, respectively. The measurement results of the pressure gauges 27a and 27b can be output to, for example, a control unit 28 as a valve control unit that controls opening and closing of the valves 24a and 24b. The controller 28 controls the opening and closing of the valves 24a and 24b based on the result, and can store the processing gas of a predetermined pressure in each of the gas storage containers 23a and 23b. That is, since the processing gas of a predetermined pressure is stored in the gas storage containers 23a and 23b having a predetermined volume, a predetermined amount of the processing gas can be stored in the gas storage containers 23a and 23b. In the present embodiment, a gas supply mechanism is constituted by the gas supply sources 21a and 21b, the gas pipes 22a and 22b, the gas storage containers 23a and 23b, the valves 24a and 24b, the gas supply pipe 25, and the supply valve 26. Have been.
[0031]
For example, the control unit 28 can also control the opening and closing of the air supply valve 26 and the exhaust valve 10. Therefore, the supply of the processing gas into the processing container 2 and the ON / OFF of the exhaust from the processing container 2 can be controlled by the control unit 28.
[0032]
By the way, as shown in FIG. 1, a dielectric window 31 made of, for example, quartz glass is provided at the upper opening of the processing container 2 via a sealing material 30 for ensuring airtightness in the processing container 2. ing. The processing container 2 is closed by the dielectric window 31, and a hermetically sealable processing chamber S is formed in the processing container 2.
[0033]
An antenna member 32 is provided above the dielectric window 31. The antenna member 32 includes, for example, a radial slot antenna 33 located at the lowermost surface, a slow wave plate 34 located above the antenna, an antenna cover 35 that covers the slow wave plate 34, protects the slow wave plate 34, and cools the same. It is constituted by.
[0034]
The radial slot antenna 33 is formed in a thin disk shape made of a conductive material, for example, copper. The radial slot antenna 33 is formed with a pair of slits that are formed at a substantially right angle so as to be concentrically arranged.
[0035]
At the center of the slow wave plate 34, a conical bump 36 made of a conductive material, for example, a metal is disposed. The bump 36 is electrically connected to the coaxial waveguide 37. The coaxial waveguide 37 is configured to propagate, for example, a microwave of 2.45 GHz generated by the microwave supply device 38 to the antenna member 32.
[0036]
The plasma processing apparatus 1 is configured as described above. Next, the processing method of the wafer W of the present invention performed by the plasma processing apparatus 1 will be described below. ₂ The case of forming a film will be described as an example. FIG. 3 is a flowchart showing an outline of the wafer processing.
[0037]
First, before the wafer W is loaded into the processing container 2, the exhaust device 8 is operated with the exhaust valve 10 opened, and the inside of the processing container 2 is evacuated. The pressure is reduced to about 66 Pa (0.5 Torr) (step S in FIG. 3). ₁ ). At this time, the pressure in the processing container 2 is adjusted so that, for example, after the wafer W is loaded later and a predetermined amount of processing gas is supplied, the pressure in the processing container 2 becomes suitable for plasma processing for film formation. , Is set back. The susceptor 3 is heated to, for example, 400 ° C. by the heater 5.
[0038]
Outside the processing container 2, oxygen gas and argon gas are supplied from the gas supply sources 21a and 21b to the gas storage containers 23a and 23b, respectively, with the air supply valve 26 closed. At this time, the gas storage amount is controlled by the pressure gauges 27a and 27b, and a predetermined amount, for example, M ₁ mol of oxygen gas is supplied to the gas storage container 23b. ₂ mol of argon gas is supplied. In addition, the material amounts M of these oxygen gas and argon gas ₁ , M ₂ Can be calculated from the total number of molecules of the processing gas to be reacted with the silicon film on the wafer W from the thickness of the silicon oxide film to be formed on the wafer W, for example. In addition, the material amount M is stored in the gas storage containers 23a and 23b. ₁ , M ₂ Can be calculated from the volumes and temperatures in the gas storage containers 23a and 23b, the molecular weight of the processing gas, and the like, using the equation of state of the gas.
[0039]
When the preparation for carrying in the wafer W is completed, the wafer W is carried into the processing vessel 2 with, for example, the exhaust valve 10 closed and the exhaust in the processing vessel 2 stopped (Step S in FIG. 3). ₂ ). The loaded wafer W is placed on the susceptor 3 and heated to 400 ° C. When the wafer W is placed on the susceptor 3, the air supply valve 26 is opened, and a predetermined amount of oxygen gas and argon gas stored in the gas storage containers 23a and 23b are supplied into the processing container 2. Thus, the processing vessel 2 is filled with a predetermined amount of oxygen gas and argon gas as shown in FIG. 4 (step S in FIG. 3). ₃ ). Due to the filling of the oxygen gas and the argon gas, the pressure in the processing container 2 increases, and the pressure in the processing container 2 becomes, for example, 133 Pa (1 Torr) suitable for the next plasma processing.
[0040]
When all the oxygen gas and the argon gas in the gas storage containers 23a and 23b are filled in the processing container 2, the air supply valve 26 is closed and the processing container 2 is closed (step S in FIG. 3). ₄ ).
[0041]
Thereafter, this state is maintained for a predetermined time until, for example, the oxygen gas and the argon gas are evenly mixed. When the oxygen gas and the argon gas are evenly mixed, the microwave generated by the microwave supply device 38 is propagated into the processing container 2 through the antenna member 32. The microwave converts the oxygen gas in the processing chamber 2 into plasma (step S in FIG. 3). ₅ ). The oxygen ions (reactive species) that have been turned into plasma are supplied to the surface of the wafer W, the silicon film on the wafer W is oxidized, and a silicon oxide film is deposited on the wafer W.
[0042]
When all the oxygen gas in the processing chamber 2 is turned into plasma and deposited on the wafer W, a silicon oxide film having a desired film thickness is formed on the wafer W. When a desired silicon oxide film is formed on the wafer W, for example, the exhaust device 8 is operated, the exhaust valve 10 is opened, and the inside of the processing chamber 2 is exhausted (Step S in FIG. 3). ₆ ). At this time, the pressure in the processing chamber 2 is reduced to, for example, 13.3 Pa (0.1 Torr) in accordance with the pressure in the apparatus adjacent to the plasma processing apparatus 1 and into which the wafer W is next loaded.
[0043]
When the pressure inside the processing container 2 is reduced to the same pressure as the unloading destination area, the wafer W is unloaded from the processing container 2 (step S in FIG. 3). ₇ ), A series of film forming processing by the plasma processing apparatus 1 ends. The pressure in the processing chamber 2 is reduced to a pressure of about 66 Pa (0.5 Torr) as described above in preparation for a wafer to be loaded next.
[0044]
According to the above embodiment, a predetermined amount of oxygen gas and argon gas are introduced into the processing vessel 2 and then the processing vessel 2 is sealed. No gas flow is formed inside. As a result, an uneven distribution of the processing gas cannot be formed in the processing container 2, and the processing gas is uniformly supplied within the wafer surface, so that a uniform film without unevenness can be formed on the wafer W. In addition, since the processing gas introduced into the processing container 2 efficiently contributes to film formation, the consumption of the processing gas can be significantly reduced as compared with the conventional case where the processing gas is dripped. Further, since a predetermined amount of the processing gas is temporarily stored in the gas storage containers 23a and 23b and then flows into the processing container 2, complicated equipment for controlling the flow rate is not required, and the apparatus can be simplified. It is planned. Further, since most of the processing gas supplied into the processing container 2 is involved in the film forming process, the film formed on the wafer W is changed by changing the amount of the processing gas stored in the gas storage containers 23a and 23b. Can easily be controlled.
[0045]
Since the pressure in the processing vessel 2 before the introduction of the processing gas is set in anticipation of the pressure increase due to the introduction of the processing gas, the plasma processing performed thereafter can be performed at a desired pressure. Further, since the oxygen gas and the argon gas, which are the processing gases, are evenly mixed and stabilized after the two types of processing gases are introduced into the processing chamber 2 and before the plasma processing is performed. The distribution of the oxygen gas and the argon gas in 2 is not biased, and the processing of the wafer W can be performed more uniformly.
[0046]
In the above-described embodiment, the oxygen gas and the argon gas are uniformly mixed in the processing container 2. However, as shown in FIG. A mixing vessel 50 may be provided on the upstream side, and oxygen gas and argon gas may be mixed in the mixing vessel 50. In such a case, for example, an air supply valve 52 is provided in the gas supply pipe 51 that connects the mixing container 50 and the processing container 2. A valve 54 is provided in the gas supply pipe 53 communicating with the mixing container 50 and each of the gas storage containers 23a and 23b. Then, first, the valve 54 is opened, a predetermined amount of the processing gas in each of the gas storage containers 23a and 23b is supplied to the mixing container 50, and the oxygen gas and the argon gas are mixed in the mixing container 50. Thereafter, the air supply valve 52 is opened, and a mixed gas of oxygen gas and argon gas is supplied into the processing container 2. In this case, the two types of processing gases are sufficiently mixed in the mixing container 50, so that the film forming process in the processing container 2 is properly performed. Further, when two types of processing gases are supplied to the processing container 2, the processing gases are already sufficiently mixed, so that, for example, a film forming process can be performed immediately after the processing gas is supplied.
[0047]
In the wafer processing described in the above embodiment, a temperature difference may be provided between the wafer W and the processing container 2 in order to agitate the processing gas filled in the processing container 2. In such a case, for example, as shown in FIG. 6, a Peltier element 60 as a temperature adjusting member that generates or absorbs heat by supplying power may be built in the side wall of the processing container 2. During the wafer processing, the temperature difference between the processing container 2 and the wafer W is made as large as possible so that a weak convection is formed in the sealed processing container 2. In the present embodiment, the temperature of the processing container 2 is adjusted to 20 ° C., and the temperature of the wafer W is adjusted to 400 ° C. In this way, a weak convection is formed in the sealed processing vessel 2, and the convection agitates the plasma (reactive species) of the processing gas. As a result, for example, the plasma of the processing gas in the processing container 2 is efficiently supplied to the wafer W, and the film is formed in a short time. When the processing of the wafer W is performed at room temperature, the temperature difference between the processing container 2 and the wafer W disappears, and this method is particularly effective in such a case. The temperature adjustment member is not limited to the Peltier element, and a flow path for flowing a coolant such as cooling water may be incorporated in the processing container 2.
[0048]
As described above, an example of the embodiment of the present invention has been described. However, the present invention is not limited to this example, and can take various aspects. For example, the processing gas is appropriately selected according to the type of the film to be generated, and may not necessarily be two types. The present invention can be applied to a sputtering process, a simple low-pressure CVD process, and the like, in addition to the film forming process by the plasma process. The present invention is also applicable to processes other than the film forming process, for example, an etching process. The substrate applied to the present invention is not limited to a wafer, and may be another substrate such as an LCD substrate or a glass substrate for a photomask.
[0049]
【The invention's effect】
According to the present invention, the uniform processing in the substrate surface is performed, so that the substrate yield is improved. Since the consumption of the processing gas can be reduced, the cost of the processing gas can be reduced. Since a complicated flow control device is not required, the decompression process can be performed using a simpler device.
[Brief description of the drawings]
FIG. 1 is an explanatory longitudinal sectional view schematically showing a configuration of a processing container portion of a plasma processing apparatus according to the present embodiment.
FIG. 2 is an explanatory view schematically showing a configuration of the plasma processing apparatus of FIG.
FIG. 3 is a flowchart showing an outline of a wafer processing process according to the embodiment;
FIG. 4 is an explanatory diagram showing a state of a plasma processing apparatus filled with a processing gas.
FIG. 5 is an explanatory view schematically showing a configuration of a plasma processing apparatus provided with a mixing container.
FIG. 6 is an explanatory view of a longitudinal section showing a configuration of a processing container portion of the plasma processing apparatus when a Peltier element is provided in the processing container.
[Explanation of symbols]
1 Plasma processing equipment
2 Processing container
23a, 23b Gas storage container
26 Air supply valve
W wafer

Claims (13)

A processing method for processing a substrate by supplying a processing gas into a processing container,
Accommodating a substrate in a processing vessel depressurized to a predetermined pressure;
Thereafter, a step of filling the processing container with a predetermined amount of processing gas set in advance;
A step of sealing the inside of the processing container with the predetermined amount of the processing gas filled therein, and processing the substrate with the processing gas in this state;
Exhausting the inside of the processing container after the processing is completed. The predetermined pressure in the processing container before filling with the processing gas is set so that the inside of the processing container becomes a preset processing pressure by filling the predetermined amount of the processing gas. A method for processing a substrate according to claim 1, When filling the processing container with a plurality of types of processing gases,
3. The substrate processing method according to claim 1, wherein the plurality of types of processing gases are mixed in a mixing container and then charged into the processing container. When filling the processing container with a plurality of types of processing gases,
3. The substrate processing method according to claim 1, further comprising: after filling the plurality of types of processing gases into the processing container, mixing the processing gas in the processing container. 3. The method according to claim 1, wherein at least one of the processing container and the substrate is heated or cooled so as to provide a temperature difference between the processing container and the substrate accommodated in the processing container. 5. The method for processing a substrate according to any one of claims 3, 3 and 4. 5. The method according to claim 1, wherein the processing of the substrate performed in the processing container is a plasma processing of generating a plasma of a processing gas filled in the processing container and processing the substrate. Or the method for processing a substrate according to any one of the above items 5. 7. The substrate processing according to claim 1, wherein the substrate processing performed in the processing container is a film forming process for forming a film on the substrate. Method. A processing apparatus for supplying a processing gas into a hermetically sealable processing container and processing a substrate in the processing container under reduced pressure.
A gas supply mechanism for supplying a processing gas into the processing container;
An exhaust mechanism for depressurizing and exhausting the inside of the processing vessel;
In a state in which the exhaust by the exhaust mechanism is stopped, a predetermined amount of processing gas is supplied into the processing container by the gas supply mechanism, and then the supply of gas by the gas supply mechanism is stopped. A substrate processing apparatus, comprising: a control unit that controls the exhaust mechanism and the gas supply mechanism so as to seal the inside. The gas supply mechanism comprises:
A gas supply source for the processing gas;
A gas storage container communicating with the gas supply source and storing the predetermined amount of the processing gas supplied from the gas supply source;
A gas supply pipe for supplying the processing gas from the gas storage container to the processing container;
An air supply valve provided on the gas supply pipe;
The gas supply mechanism is configured so that the predetermined amount of the processing gas stored in the gas storage container is supplied into the processing container by opening the air supply valve. An apparatus for processing a substrate according to claim 8. A processing apparatus for supplying a processing gas into a hermetically sealable processing container and processing a substrate in the processing container under reduced pressure.
A gas supply source for the processing gas;
A gas storage container that communicates with the gas supply source and stores a predetermined amount of processing gas supplied from the gas supply source;
A gas supply pipe for supplying the processing gas from the gas storage container to the processing container.
The gas supply pipe is provided with an air supply valve,
The substrate processing apparatus according to claim 1, wherein the predetermined amount of the processing gas stored in the gas storage container is filled in the processing container by opening the air supply valve. A gas pipe for supplying a processing gas from the gas supply source to the gas storage container,
A pipe valve provided in the gas pipe;
A pressure gauge for measuring a pressure in the gas storage container,
The substrate according to claim 9, further comprising: a valve control unit that outputs a measurement result of the pressure gauge and controls opening and closing of the piping valve based on the measurement result. Processing equipment. There are a plurality of types of the processing gas, and the gas storage container is provided for each type of the processing gas,
12. The apparatus according to claim 9, further comprising a mixing vessel for mixing the processing gases before the processing gases from the respective gas storage vessels are supplied to the processing vessels. Substrate processing equipment. 13. The apparatus according to claim 8, further comprising a temperature adjusting member for providing a temperature difference between the processing container and a substrate in the processing container. Substrate processing equipment.

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