JP2004296771A - Device and method for inspecting semiconductor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To identify a defective location which occurs in a wiring of a semiconductor with a wiring pattern formed. <P>SOLUTION: The predetermined wiring 3 with its both ends contacted by a probe 2 is irradiated by a charged beam 5, and absorption current flowing each probe is detected by an amplifier 6 to obtain the differential signal by a differential amplifier 7. As a result, when a defect such as high resistance or the like occurs through the wiring 3, the absorption current of the wiring 3 is shunted. Monitoring an output of the differential amplifier 7 can identify the defective place 8. The use of the differential signal of the absorption current flowing across the wiring can detect the defective location having a low resistance value without relying on the input resistance of the current amplifier, and the difference of contrast corresponding to the defective part is emphasized. A strength modulation of the charged beam which scan the wiring to be analyzed and the detection of a change in the absorption current of the wiring removes a noise component other than the strength modulation frequency to detect the defect in high sensitivity. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an inspection method and an inspection apparatus for a semiconductor device, and more particularly, to a technique for identifying an electrically defective portion of a wiring.
[0002]
[Prior art]
In the failure analysis of a semiconductor device such as a system LSI including a logic circuit, the failure detection by a tester does not directly lead to the identification of the physical position of the defect, so that it is difficult to identify the defect position. This causes an increase in the time required for analysis. Therefore, analysis devices such as an emission microscope, an electron beam tester, and an OBIRCH (Optical Beam Induced Resistance Change) are provided, and the defect position is promptly identified by making full use of these analysis devices.
[0003]
In recent years, as a means for analyzing disconnection system defects including high-resistance connections, which has become an issue as a defect in the wiring system of semiconductor devices, the surface of the semiconductor device is irradiated with a charged beam to detect the current absorbed by the wiring and to image A charged beam analyzer technology that detects a secondary electron emitted from a wiring or forms an image by detecting the secondary electron has attracted attention.
[0004]
For example, Japanese Patent Application Laid-Open No. 2002-368049 discloses that a probe is brought into contact with one end of a semiconductor device having a wiring pattern formed thereon, an electron beam is irradiated on the surface of the semiconductor device, and a current absorbed by the wiring via the probe is provided. There is disclosed a technology for detecting and imaging an image. In this conventional technique, a defective portion on a wiring is specified by utilizing a shunting phenomenon of an absorption current in a high-resistance portion of the wiring. Specifically, a probe is brought into contact with one end of a wiring where a high resistance portion such as a disconnection exists, and the other terminal is grounded. In this state, when the charged beam is scanned over the wiring, if the probe and the wiring are electrically connected, a current induced by the charged beam flows through the probe (this current is referred to as an “absorption current”). ). When the electron beam traverses the defective portion as the beam scans, conduction between the probe and the wiring cannot be established, so that no absorption current is observed. Therefore, by monitoring the scanning speed of the charged beam and the time of the observed absorption current, a defective portion on the wiring can be specified. In order to visualize the observed absorption current, the absorption current image observed by one of the probes may be time-sequentially displayed on a monitor. When the charged beam traverses the defective portion, the contrast of the image changes, so that the defective portion can be easily specified visually.
[0005]
[Problems to be solved by the invention]
In the technique described in JP-A-2002-368049, since one end of the probe is grounded, the sensitivity is not good for a wiring having a low resistance value. That is, in the technique described in Japanese Patent Application Laid-Open No. 2002-368049, current detection is performed by a current detector connected to the probe. However, since one end of the probe is grounded, the resistance value of the wiring is reduced. If the input resistance is lower than the input resistance of the detector, all the absorbed current flows to the ground side. Therefore, the absorption current does not flow to the current detector side, and the defective portion cannot be specified.
[0006]
An object of the present invention is to provide an inspection apparatus and an inspection method for detecting a wiring defect by measuring an absorption current with a probe, thereby increasing the sensitivity of the inspection, and at the same time, having a low resistance value regardless of the input resistance of the current detector. It is an object of the present invention to provide a technique capable of detecting a resistance failure of a semiconductor device.
[0007]
[Means for Solving the Problems]
The following is a brief description of an outline of typical inventions disclosed in the present application.
The present invention relates to a charged beam apparatus that irradiates a sample with a charged beam, scans the sample, detects a signal generated secondarily from the sample, and obtains surface or internal information. By differentially amplifying the absorption current thus obtained, the signal output of the obtained absorption current is increased. At this time, if the offset compensating means is provided in the amplifier, the sensitivity to the absorption current is further improved.
[0008]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In all the drawings for describing the embodiments, members having the same functions are denoted by the same reference numerals, and repeated description thereof will be omitted.
(Embodiment 1)
FIG. 1 is an explanatory diagram showing a configuration of a main part of the semiconductor inspection device of the first embodiment.
In the semiconductor device 1, a semiconductor element such as a transistor and a wiring are formed. Further, the semiconductor device 1 may be in a state of a semiconductor wafer before being divided into individual semiconductor chips.
[0009]
In the semiconductor inspection apparatus of the first embodiment, the charged beam 5 is applied to the surface of the semiconductor device 1 while the two probes 2 are in contact with both ends of the wiring 3 formed on the surface of the semiconductor device 1 or the pads 4. Scan up. In this case, the charged beam 5 is an electron beam having a size of about 1 nA to 100 nA. Under this condition, the currents absorbed by the wiring 3 of the semiconductor device 1 and flowing through the wiring 3 are respectively detected by the two probes 2, the detected current values are amplified by the amplifiers 6, and the output signals of the two amplifiers 6 are output. The signal is input to the input terminal of the differential amplifier 7 to generate a difference signal. The obtained difference signal corresponds to a change in the absorption current of the wiring 3, and the difference signal is displayed as a wiring absorption current image 9 in synchronization with the scanning of the charged beam 5. The amplifiers 6 are required by the number of probes, but in principle, two amplifiers, a first amplifier and a second amplifier, are required. As a result, the charged beam 5 is irradiated, and the wiring 3 electrically connected to the probe 2 can be exposed. At this time, if there is a defective portion 8 such as a broken wire or a high-resistance portion in the path of the wiring 3, the flow of the current absorbed by the wiring 3 on both sides of the defective portion 8 changes. Since the contrast, brightness, or gradation of the image changes before and after the defective portion 8, the defective portion 8 can be detected.
[0010]
Here, the principle of increasing the current signal strength by the differential amplifier will be described with reference to FIGS. FIG. 8 shows an equivalent circuit including the current amplifiers 601 and 602, the input resistance R _in of the current amplifier, the differential amplifier 7, and the resistance of the wiring (R: normal part resistance, R _d : defective part resistance). G represents the amplification of the current amplifier in units of V / A. The total length of wire X _L, shows a case with a localized defect portion at a distance X _d measured from one end of the wire. The current value that is absorbed by the wire when exposed to the charged beam on the wiring as I _a, since the I _a is divert the resistance value of both sides of the irradiation position, the shunted using the equivalent circuit of FIG. 8 By calculating the current value, the outputs of the current amplifiers 601 and 602 in FIGS. 9A and 9B can be obtained. Contrast of the defect portion becomes _{R d I a G / R T} . Here, R _T = R + R _d + 2R _in . When the differential amplification is used, the output signal is obtained as the difference between the output values of FIGS. 9A and 9B, so that the output of FIG. 9C is obtained. Therefore, it can be seen that the contrast of the defective portion is twice that of the prior art, and the signal strength is doubled.
[0011]
Further, since two probes 2 are brought into contact with both ends of the wiring 3 formed on the surface of the semiconductor device 1 or the pads 4 in FIG. 1, the input of the current detector, which is a problem in the conventional method, If the wiring has a resistance value lower than the resistance, all the absorbed current will flow to the ground side, it will not flow to the current detector side at all, and it will not be possible to identify the defective part. It is now possible to detect a low-resistance resistance failure without depending on it.
In addition to the means for displaying the change in the current value detected by the probe 2 as the absorption current image 9, the secondary particles 10 are detected as a signal generated secondarily when the charged beam 5 is scanned. Alternatively, a means for detecting the defective portion 8 based on a contrast difference between images caused by the detection amount of the secondary particles 10 or a surface image of the semiconductor device may be obtained. The secondary particles 10 are secondary electrons that are normally generated secondarily. In the present embodiment, the secondary electrons are detected as the signals generated secondarily. However, for example, characteristic X-rays may be detected as long as the signals are generated due to the incident electron beam. As a result, it is possible to correspond the defect portion 8 of the wiring 3 to the surface image, and it is possible to reliably detect more types of defects, and to detect the defect portion 8 existing in the contact hole or the through hole which has been overlooked conventionally. Defects can be specified. As a result, the development period of the semiconductor device of the first embodiment can be shortened and the yield can be improved.
[0012]
FIG. 2 is an explanatory diagram showing a configuration of the semiconductor inspection device of the first embodiment including the configuration shown in FIG.
The semiconductor inspection apparatus includes an electron gun 11, a condenser lens 12, a blanking control electrode 13, a movable stop 14, a deflector 15, an objective lens 21, a secondary electron detector 16, a sample stage 24, an XY stage 23, and a probe 2. , A probe holding unit 22, a current amplifier 6, a differential amplifier 7, a video board 17, an SEM display 18, a personal computer 19, a vacuum exhaust system 20, and a sample exchange chamber (not shown).
The timing of irradiating the sample 1 with the electron beam 5 is controlled by the blanking control electrode 13, and unnecessary electron beams are not irradiated on the sample 1 except for the time of performing the inspection. When the sample 1 is irradiated with the electron beam 5, the scanning speed and the scanning area are controlled by the deflector 15. The irradiation energy of the electron beam was about 3 keV. Thereby, the amount of secondary electrons generated is smaller than the amount of the electron beam 5 to be irradiated, and the current flowing through the wiring pattern 3 can be increased. The current of the electron beam 5 to be irradiated was set to a current of 1 to 5 nA here. A part of the irradiated electron beam 5 flows to the wiring pattern 3, which is measured from the probe 2. Since the current is measured while scanning the electron beam at high speed, it is desirable that the beam current be large.
[0013]
The two probes 2 are brought into contact with the pads 4 at both ends of the wiring pattern 3 on the surface of the sample 1 in advance. The probe 2 is fixed to the probe holding unit 22, and the probe holding unit 22 has an XYZ driving function for driving the probe 2 in three XYZ directions. As a result, the probe 2 is moved to an arbitrary position on the sample 1 and is brought into contact therewith. The part (probe 2 and probe holding unit 22) that brings the probe 2 into contact with an arbitrary position of the sample 1 is defined as probing means. While the probe 2 is in contact with the sample 1, the electron beam 5 is applied to a desired region of the sample 1 including the wiring pattern 3 with which the probe 2 is in contact. By irradiating the electron beam 5, secondary electrons 10 are generated from the surface, and at the same time, a current flows through the wiring pattern 3. This current is transmitted through the two probes 2 in contact with the wiring pattern 3, is converted into a voltage signal by the current amplifier 6, is amplified at the same time, goes out of the vacuum chamber through the feedthrough 25, and is further differentially transmitted. After being differentially amplified by the amplifier 7, it is input to the video board 17. Then, it is displayed on the display 18 or the personal computer monitor 19.
[0014]
Usually, when displaying an electron beam image, a signal detected by the secondary electron detector 16 is amplified in the middle, converted into a digital signal via the video board 17, and displayed on a display 18 or a personal computer monitor 19. However, in this apparatus, the secondary electron signal and the current signal flowing through the probe are simultaneously sent to the video board 17. The video board 17 converts a signal in synchronization with electron beam scanning. Therefore, it is possible to simultaneously display and observe the signal of the secondary electrons 10, that is, the change of the secondary electron image and the current signal flowing through the probe 2, that is, the absorption current image, while scanning the electron beam 5 on the same location. It is. Therefore, a high-speed amplifier having a response speed of 400 KHz or more was used as the current amplifier 6 and the differential amplifier 7 for amplifying the signal flowing through the probe 2. Furthermore, the present technology enables detection with a high signal-to-noise ratio by directly detecting a wiring absorption current, not a substrate current, with a probe. For these reasons, the absorption current signal can be amplified at a speed equivalent to the scanning speed of a normal SEM (Scanning Electron Microscope), and the absorption current image can be displayed. Therefore, the absorption current image and the secondary electron image can be simultaneously displayed. It became possible to display. FIG. 3 is an example of (a) an absorption current image and (b) a secondary electron image displayed simultaneously. Although the position of the defect could not be identified by the secondary electron image, the defect position could be identified by the absorption current image. Further, a correspondence between the secondary electron image representing the surface shape and the defective position could be given.
[0015]
Further, in the first embodiment, the probe 2 and the current amplifier 6 are connected by the cable 29. However, since the probe 29 is easily affected by noise from the outside through the cable 29, the cable 29 needs to be as short as possible. The current amplifier 6 converts the current signal into a voltage signal, but since the current signal is susceptible to disturbance due to electromagnetic induction, the cable 29 is shortened. FIG. 5 is a diagram showing the vicinity of the probe holding unit 22. Ideally, the current amplifier 6 is mounted on the probe holding unit 35 installed on the probe holding unit 22 as shown in this figure, and the cable 29 is made shorter than before. Preferably, the cable is provided with electromagnetic wave shielding means to improve noise resistance. This is possible, for example, by means such as a coaxial cable coated with conductors and insulators. By doing so, it is possible to detect the absorption current with little noise.
[0016]
An analysis procedure of the semiconductor device 1 using the semiconductor inspection device of the first embodiment will be described.
First, the semiconductor device 1 to be analyzed is placed on the holder 24 in the sample exchange chamber. Subsequently, after the sample exchange chamber is evacuated to a predetermined degree of vacuum by a vacuum evacuation system, the holder 24 on which the semiconductor device 1 is mounted is introduced into the sample chamber 26. Next, after moving the analysis location (wiring 3) on the surface of the semiconductor device 1 to below the charged beam optical system, the charged beam 5 is irradiated to the wiring 3 or the pad 4 provided at the end of the wiring 3. At this time, the secondary particles 10 generated from the wiring 3 or the pad 4 are detected by the secondary particle detector 16, and an image is formed and observed based on the detected amount. Next, two probes 2 (a first probe and a second probe) are brought into contact with the wiring 3 or the pad 4 on both sides of the wiring system having the defective portion 8. Next, the charged beam 5 is absorbed by the wiring 3 by irradiating and scanning the surface of the semiconductor device 1 with the charged beam 5. At this time, the current absorbed by the wiring 3 is detected by the probe 2 connected to the amplifier 6, and the detected current is amplified by the amplifier 6. The amplified current is differentially amplified by the differential amplifier 7, converted to an image signal by performing A / D conversion by the video board 17, and then transmitted to the SEM display 18 or the personal computer monitor 19, where the absorption current image is obtained. 9 can be displayed. That is, since the absorption image 9 is formed based on the current value of the current absorbed by the wiring 3, it is possible to specify the defective portion 8 together with the image formed based on the detected amount of the secondary particles 10, It is possible to detect a defective portion 8 existing in a hole or a through hole, and to detect a disconnection defect including disconnection and high resistance connection in the wiring 3. Further, since the current flowing through both ends of the wiring 3 is detected, the absorption current can be detected even with the wiring 3 having a resistance value equal to or less than the input resistance of the current amplifier 6, and the contrast difference corresponding to the defective portion is emphasized. . The input resistance of the current amplifier 6 used in the first embodiment was 10 kW, and it was possible to detect a wiring defect of about 30 kW.
[0017]
Next, if there is another analysis point on the surface of the same semiconductor device 1, the analysis point is moved to the lower part of the charged beam optical system, and the analysis is performed by the same process as the detection process of the defect portion 8. Do. If there is no other analysis point, the holder 24 is moved to the sample exchange position in the sample chamber 26, and then the degree of vacuum in the sample chamber 26 and the sample exchange chamber is checked. Subsequently, after the sample exchange chamber is evacuated to a predetermined degree of vacuum by the evacuation system, the holder 24 is carried out to the sample exchange chamber. Then, after leaking the sample exchange chamber to the atmospheric pressure, the semiconductor device 1 on which the analysis has been completed is taken out of the sample exchange chamber, and the semiconductor device 1 can be transferred to the next analysis step.
(Embodiment 2)
FIG. 4 is an explanatory diagram illustrating the configuration of the semiconductor inspection device according to the second embodiment.
The semiconductor inspection device of the second embodiment uses a lock-in amplifier 27 in addition to the configuration of the semiconductor inspection device of the first embodiment. The intensity of the charged beam 5 is modulated by the blanking control electrode 13 and the control power supply 28. The same frequency component as the beam intensity modulation frequency of the output signal of the differential amplifier 7 is detected by the lock-in amplifier 27, and the detection signal is sent to the video board 17.
The analysis procedure according to the second embodiment is the same as the analysis procedure according to the first embodiment except for the means for detecting the wiring absorption current using the lock-in amplifier 27, and thus the details are not described here.
[0018]
In the second embodiment, since the lock-in amplifier 27 is used, the frequency component of noise different from the beam modulation frequency can be removed, so that the signal-to-noise ratio of the wiring absorption current can be improved and the sensitivity of the wiring failure detection can be increased. Can be realized. As a result, a wiring defect having a wiring resistance of several kW could be identified.
(Embodiment 3)
FIGS. 6A and 6B are circuit diagrams showing the inside of the current amplifier 6. FIG. The input current is converted to a voltage signal by the amplifier resistor _RGAIN, but an offset voltage usually appears at the output even when the input current is zero. In an ideal amplifier, the output becomes completely zero if the input current is zero, but in an actual amplifier, an offset always occurs as some error. The cause of the offset is that the characteristics of the + input and −input are not perfectly symmetric. This offset voltage increases when the inspection target is a low resistance wiring, and eventually the output of the current amplifier 6 is saturated, and the absorption current cannot be measured. Although not described in the first and second embodiments, the offset voltage is compensated. There are three methods for offset compensation. One is that a built-in offset compensation terminal is provided in the amplifier and adjusted. FIGS. 6A and 6B show a case in which a terminal for offset compensation is not used. This is to adjust by adding voltage or current to the input of the amplifier. FIG. 6A shows a case in which a current is supplied to the negative input of the amplifier to compensate for the current. The portion composed of the resistor R ₁ and the variable resistor VR is the offset compensation circuit. The compensation current supplied to the-input is adjusted by the variable resistor VR so that the offset output becomes zero. However, R ₁ is the amplifier -, + entered in parallel between the input, because it affects the performance of the amplifier, to the 100 parallel value of the inspection target wiring resistance R _GAIN to the resistance value of approximately 1000 times It is safe. For example, VR, _{R 1} each 50 kW, and 100 MW. FIG. 6B illustrates a case where a voltage is applied to the + input of the amplifier to compensate for the voltage. Variable resistor VR by a current flowing through the resistor R ₂ is a potential difference across the resistor R _3, so that it will adjust the offset. However, in order to avoid the effects to other parts of the circuit, R ₃ should be as low as possible. For example, VR, R ₂ , and R ₃ are 50 kW, 220 kW, and 100 W, respectively.
[0019]
FIG. 7 is a flowchart illustrating offset compensation means. First, in step 30, the charged beam 5 is irradiated to the wiring pattern 3 to be inspected. Next, in a step 31, the first and second probes 2 are brought into contact with both ends of the desired wiring pattern 3 while observing the secondary particle image by the irradiation of the charged beam. Usually, the secondary particle image is a secondary electron image by secondary electrons. Next, in step 32, the irradiation of the charged beam is stopped, and in this state, the output of the current amplifier 6 connected to each probe 2 is read. This output value is the offset voltage. In the next step 33, offset compensation is performed by the method described with reference to FIG. The variable resistor VR is adjusted so that the output of the amplifier 6 becomes zero. Thereby, the offset is adjusted to zero, and if the input current is zero, the output voltage becomes completely zero. Finally, in step 34, the charged beam is irradiated again to start observation of absorption current. The above is the compensation method, and this procedure is particularly necessary when inspecting low-resistance wiring of several kW or less.
[0020]
【The invention's effect】
The effects obtained by typical aspects of the invention disclosed in the present application will be briefly described as follows.
[0021]
The wiring to be analyzed is scanned with the charged beam, and the difference signal of the absorption current flowing at both ends of the wiring is used to detect the change in the absorption current flowing through the wiring, so that it does not depend on the input resistance of the current amplifier. In addition, a defective portion having a low resistance value can be detected, and a contrast difference corresponding to the defective portion is emphasized.
[0022]
In addition, the intensity of the charged beam that scans the wiring to be analyzed is modulated, and the change in the wiring absorption current is detected using the same frequency component as the intensity modulation frequency of the difference signal of the absorption current flowing at both ends of the wiring. Noise components other than the modulation frequency are removed, and defect detection can be performed with high sensitivity.
[Brief description of the drawings]
FIG. 1 is an explanatory diagram showing a configuration of a main part of a semiconductor inspection device according to an embodiment of the present invention.
FIG. 2 is an explanatory diagram illustrating a configuration of a semiconductor inspection device according to an embodiment of the present invention.
FIG. 3 is an explanatory diagram showing simultaneous display of an absorption current image and a secondary electron image.
FIG. 4 is an explanatory diagram showing a configuration of a semiconductor inspection device according to another embodiment of the present invention.
FIG. 5 is an explanatory diagram showing a current amplifier attached to probing means.
FIG. 6 is an explanatory diagram showing an internal circuit of the current amplifier.
FIG. 7 is a flowchart illustrating an offset compensation method.
FIG. 8 is an equivalent circuit diagram including a current amplifier, a differential amplifier, and a wiring resistance to be inspected.
FIG. 9 is an explanatory diagram showing output signals of a current amplifier and a differential amplifier.
[Explanation of symbols]
1 semiconductor device, 2 probe, 3 wiring, 4 pad, 5 charged beam, 6, 601, 602, current amplifier, 7 ···························································································· • 13 blanking control electrode, 14 movable diaphragm, 15 deflector, 16 secondary particle detector, 17 video board, 18 SEM display, 19 personal computer, 20 vacuum pumping system, 21 objective lens, 22 probe holding unit, 23 XY stage, 24 · Sample table, 25 ··· Feedthrough, 26 ··· Sample chamber, 27 ··· Lock-in amplifier, 8 ... Blanking control power supply, 29 ... Cable, 30 ... Start charged beam irradiation, 31 ... Probe contact, 32 ... Stop charged beam irradiation, 33 ... Offset adjustment, 34: Start of charged beam irradiation, 35: Probe holding unit.

Claims (16)

In a charged beam device that irradiates and scans a sample with a charged beam and detects a signal generated secondary from the sample to obtain surface or internal information,
A plurality of probing means for bringing the probe into contact with an arbitrary portion of the sample; a plurality of amplifying means for the absorption current obtained through the probing means; and a difference for obtaining a difference signal from a plurality of output signals obtained from the amplifying means. A semiconductor inspection device, comprising: a dynamic amplification unit. In an inspection apparatus for inspecting a wiring defect of a semiconductor sample on which a wiring pattern is formed,
A charged particle beam source, means for scanning a charged particle beam generated from the charged particle beam source on the wiring, at least two probes, and a probe holding unit for bringing the probe into contact with the wiring and holding the probe And a first amplifier connected to one of the two or more probes, a second amplifier connected to one of the two or more probes, and outputs of the first and second amplifiers. And a current detection means connected to the differential amplifier. 2. The semiconductor inspection apparatus according to claim 1, wherein said first amplifier or said second amplifier has an offset compensating means. The semiconductor inspection apparatus according to claim 3,
A semiconductor inspection apparatus, comprising: a resistor connected to a signal input terminal of the first amplifier or the second amplifier and a variable resistor as the offset compensating means. The semiconductor inspection device according to claim 2,
Having means for modulating the charged particle beam,
A semiconductor inspection apparatus, comprising: a lock-in amplifier that uses a modulation frequency of the modulation operation as a reference signal and an output signal of the differential amplifier as an input signal as the current detection unit. The semiconductor inspection device according to claim 2,
Having means for modulating the charged particle beam,
The current detection unit includes a first signal input terminal that receives a modulation frequency of the modulation operation as an input signal, and a second signal input terminal that receives an output signal of the differential amplifier as an input signal,
A semiconductor inspection apparatus, wherein a signal component having the same frequency as a signal input to the first signal input terminal is detected from a signal input to the second signal input terminal. 3. The semiconductor inspection device according to claim 2, further comprising a secondary electron detector for detecting secondary electrons generated from the wiring. The semiconductor inspection device according to claim 2,
A semiconductor inspection apparatus having a display unit for displaying an output signal of the current detection unit in synchronization with the scanning of the scanning unit. 3. The semiconductor inspection apparatus according to claim 2, wherein the first amplifier and the second amplifier are formed on the probe holding unit. The semiconductor inspection device according to claim 8,
A cable for connecting the first amplifier or the second amplifier to the probe;
A semiconductor inspection apparatus, wherein the cable includes an electromagnetic wave shielding unit. Irradiating and scanning the sample with a charged beam, detecting a signal generated secondarily from the sample, bringing a plurality of probes into contact with an arbitrary portion of the sample, and amplifying a plurality of absorption currents obtained through the probes. In a semiconductor inspection method for obtaining a difference signal from a plurality of amplified signals, the difference signal is displayed on an image in synchronization with scanning of a charged beam, and an abnormal portion of a wiring is detected based on a change in brightness of the displayed image. A semiconductor inspection method characterized in that: In the method for inspecting a semiconductor device on which a wiring pattern is formed,
Bringing a plurality of probes into contact with any two or more places of the wiring,
Scanning the charged beam between the points of contact of the probe on the wiring,
Differentially amplify the current detected by the probe by scanning the charged beam,
A method of inspecting a semiconductor device, comprising: detecting a change in the differentially amplified signal in synchronization with scanning of the charged beam to specify a defective portion of the wiring. The method for inspecting a semiconductor device according to claim 12,
After bringing a plurality of probes into contact with the arbitrary two or more places, the wiring is irradiated with a charged beam,
Adjust the differential amplifier so that the output becomes zero,
A semiconductor inspection method, wherein scanning of the charged beam is started. The method for inspecting a semiconductor device according to claim 12,
Scanning by modulating the charged beam,
A semiconductor inspection method, wherein a signal component having the same frequency as the modulation frequency of the modulation operation is detected from a signal detected by a probe. The method for inspecting a semiconductor device according to claim 12,
A method for inspecting a semiconductor device, comprising detecting secondary electrons emitted from the wiring by scanning the charged beam. The method for inspecting a semiconductor device according to claim 15,
An inspection method for a semiconductor device, wherein an image based on the detected secondary electrons and an image based on the differentially amplified signal are simultaneously displayed.

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