JP2004276378A - Liquid discharging head, liquid discharging device and manufacturing method of liquid discharging head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the integration degree and to secure the reliability by an application, for example, to an inkjet printer by a thermal system in relation to a liquid discharging head, a liquid discharging device and a manufacturing method of a liquid discharging head. <P>SOLUTION: The liquid discharging head is constituted by forming an element separation region 22 for insulating and separating semiconductor elements 23 and 24, by a trench structure. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a liquid discharge head, a liquid discharge device, and a method for manufacturing a liquid discharge head, and can be applied to, for example, a thermal inkjet printer. According to the present invention, an element isolation region for insulating and isolating a semiconductor element is formed by a trench structure, so that the degree of integration can be improved and reliability can be ensured.
[0002]
[Prior art]
2. Description of the Related Art In recent years, in the field of image processing and the like, there has been a growing need for hard copy colorization. To meet this need, conventionally, a color copy system such as a sublimation type thermal transfer system, a fusion thermal transfer system, an ink jet system, an electrophotographic system, and a thermally developed silver salt system has been proposed.
[0003]
Among these methods, the ink jet method is a method in which droplets of a recording liquid (ink) fly from nozzles provided in a printer head, which is a liquid ejection head, and adhere to a recording target to form dots. With this configuration, a high-quality image can be output. The ink jet system is classified into an electrostatic attraction system, a continuous vibration generation system (piezo system), and a thermal system according to the method of flying ink droplets from nozzles.
[0004]
Among these methods, the thermal method is a method in which bubbles are generated by local heating of ink, and the bubbles are used to push out ink from nozzles and fly to a print target, and it is possible to print a color image with a simple configuration. It has been made possible.
[0005]
In such a thermal printhead, a heating element for heating ink is formed integrally with a drive circuit of a logic integrated circuit for driving the heating element on a semiconductor substrate. Thus, in this type of printer head, the heating elements are arranged at a high density and can be reliably driven.
[0006]
That is, in this thermal printer, it is necessary to arrange the heating elements at a high density in order to obtain a high quality printing result. Specifically, for example, in order to obtain a printing result equivalent to 600 [DPI], it is necessary to arrange the heating elements at intervals of 42.333 [μm]. It is extremely difficult to arrange individual drive elements. In this way, in the printer head, switching transistors and the like are created on the semiconductor substrate, connected to the corresponding heating elements by integrated circuit technology, and further, each switching transistor is driven by a drive circuit similarly created on the semiconductor substrate. Each of the heating elements can be driven simply and reliably.
[0007]
Therefore, in the printer head, an element isolation region made of silicon oxide is formed on a semiconductor substrate, and a semiconductor element such as a switching transistor is formed in a region insulated and separated by the element isolation region. In a printer head, such an element isolation region is formed by thermal oxidation of a silicon substrate, which is a semiconductor substrate, as proposed in, for example, Japanese Patent No. 3262595.
[0008]
In the printer head, an interlayer insulating film is further formed, and a heating element is formed on the interlayer insulating film by using tantalum, tantalum nitride, tantalum aluminum, or the like. The printer head functions as a heat storage layer for reducing heat propagation from the heating element so that the element isolation region and the interlayer insulating film thus formed do not propagate the heat of the heating element to the underlying silicon substrate. Thus, the semiconductor element and the like are protected, and the ink is efficiently heated by the heating element. It is known that the thickness of the element isolation region and the interlayer insulating film needs to be at least 1.3 [μm] as a whole when the thermal conductivity is taken into consideration. (WG Hawkins et al., IEEE IEDM 1995 P.959-962).
[0009]
That is, FIG. 6 is a cross-sectional view showing a configuration near a heating element in this type of printer head. In the printer head 1, a silicon nitride film is stacked in a region where the semiconductor elements 4 and 5 are formed on the silicon substrate 2, and the silicon substrate 2 is thermally oxidized using the silicon nitride film as a mask. An element isolation region (LOCOS: Local Oxidation Of Silicon) 3 is formed by an oxide film. Subsequently, in the printer head 1, after the semiconductor elements 4 and 5 are formed and the first interlayer insulating film 6 is laminated, the interlayer insulating film 6 on the semiconductor elements 4 and 5 is removed to form contact holes. You.
[0010]
Subsequently, in the printer head 1, a wiring pattern material layer is deposited, and the wiring pattern material layer is processed into a predetermined shape to form a first wiring pattern 7 (Al). Subsequently, in the printer head 1, a second-layer interlayer insulating film 8 is laminated, and a heating element 9 is formed on the upper layer by using tantalum, tantalum nitride, tantalum aluminum, or the like. Further, in the printer head 1, a via hole is formed by forming an opening in the interlayer insulating film 8, a second wiring pattern material layer is deposited by aluminum or the like, and this wiring pattern material layer is processed into a predetermined shape. The wiring pattern 10 (2Al) of the layer is formed. In the printer head 1, the semiconductor elements 4 and 5 and the heating element 9 are connected by the wiring pattern 10 of the second layer and the wiring pattern 7 of the first layer.
[0011]
Subsequently, the printer head 1 includes an insulating protective layer 11 made of silicon nitride, silicon carbide, or the like, a cavitation-resistant layer 12 made of tantalum, and a predetermined member arranged to provide an ink liquid chamber, an ink flow path, A nozzle is created.
[0012]
After the ink is guided to the ink liquid chamber by the ink flow path created in this way, the heating elements 9 generate heat by driving the semiconductor elements 4 and 5, and the ink in the ink liquid chamber is locally discharged. Heat to The printer head 1 generates bubbles in the ink liquid chamber by this heating to increase the pressure of the ink liquid chamber, and extrudes the ink from the nozzles to fly to the printing target.
[0013]
[Patent Document 1]
Patent 3262595
[Non-patent document 1]
W. G. FIG. Hawkins et al., IEEE IEDM, 1995, p. 959-962
[0014]
[Problems to be solved by the invention]
When the element isolation region 3 is formed by the thermal oxidation process, the field oxide film penetrates to a lower layer of the silicon nitride film as a mask, thereby causing a defect in the semiconductor substrate. When such a defect occurs in the printer head 1, a leak current is generated in the semiconductor elements 4 and 5, and there is a problem that reliability is deteriorated accordingly.
[0015]
When the element isolation region 3 is formed by the thermal oxidation treatment, as shown by an arrow A, a footing of a field oxide film called a bird's beak is formed near the boundary between the element isolation region 3 and the regions where the semiconductor elements 4 and 5 are formed. A portion is generated, and the semiconductor elements 4 and 5 must be formed avoiding this footing portion. Therefore, the printer head 1 has a problem that the integration degree cannot be improved.
[0016]
The present invention has been made in view of the above points, and aims to propose a liquid discharge head, a liquid discharge device, and a method of manufacturing a liquid discharge head that can improve the degree of integration and ensure reliability. It is.
[0017]
[Means for Solving the Problems]
In order to solve such a problem, the invention according to claim 1 is applied to a liquid ejection head that drives a heating element by a semiconductor element to heat a liquid held in a liquid chamber and eject a liquid droplet from a predetermined nozzle. Then, after a predetermined substrate is dry-etched to form a trench, a material film for the element isolation region is formed, and an element isolation region for insulating and isolating the semiconductor element by removing the excess material film of the element isolation region is formed. Be formed.
[0018]
According to the third aspect of the present invention, the present invention is applied to a liquid ejecting apparatus for ejecting liquid droplets by driving a heating element provided in the liquid ejecting head, and the liquid ejecting head dry-etches a predetermined substrate to form a trench. Is formed, a material film for the element isolation region is formed, and an excess material film for the element isolation region is removed so that an element isolation region for insulating and isolating the semiconductor element is formed.
[0019]
Further, in the invention according to claim 4, the method is applied to a method of manufacturing a liquid ejection head in which a liquid droplet is ejected by driving a heating element by a semiconductor element, and after a predetermined substrate is dry-etched to form a trench, A material film for the element isolation region is formed, and an excess material film for the element isolation region is removed to form an element isolation region for insulating and isolating the semiconductor element.
[0020]
According to the configuration of the first aspect, the semiconductor element drives the heating element to heat the liquid held in the liquid chamber and apply the liquid ejection head to eject a liquid droplet from a predetermined nozzle. After a trench is formed by dry etching the upper part, a material film of the element isolation region is formed, and an element isolation region for insulating and isolating the semiconductor element by removing the excess material film of the element isolation region is formed. In addition, generation of a region where a semiconductor element cannot be formed, such as a bird's beak in a field oxide film, can be effectively avoided. Further, in the semiconductor element formation region, the occurrence of a defect due to the bite of the field oxide film does not occur, so that the generation of a leak current in the semiconductor element can be prevented. Therefore, it is possible to manufacture a liquid ejection head that can improve the degree of integration and ensure reliability.
[0021]
Thus, according to the third and fourth aspects, it is possible to provide a liquid ejecting apparatus and a method of manufacturing a liquid ejecting head that can improve the degree of integration and ensure reliability.
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings as appropriate.
[0022]
(1) Configuration of the embodiment
FIG. 1 is a sectional view showing a printer head applied to the printer according to the embodiment of the present invention. In the printer head 21, an element isolation region 22 is formed by embedding a silicon oxide film in a groove (hereinafter, referred to as a trench) formed in a silicon substrate 25.
[0023]
That is, as shown in FIG. 2A, in the printer head 21, after the silicon substrate 25 is cleaned by a wafer, the regions where the transistors 23 and 24 are formed are masked by a lithography process. Subsequently, in the printer head 21, a region for forming the element isolation region 22 by a dry etching process is subjected to an etching process with a thickness of 0.4 to 0.6 [μm], thereby forming a depth of 0.4 to 0.6 [μm]. Is formed.
[0024]
Subsequently, the printer head 21 is formed by forming a silicon oxide film by a CVD (Chemical Vapor Deposition) method so as to completely fill the trench, and further forming a surplus film by a CMP (Chemical Mechanical Polish) method on a portion other than the trench. The silicon oxide film is polished and removed, thereby forming an element isolation region 22 having a trench structure with a thickness of 0.4 to 0.6 [μm]. As a result, the printer head 21 can effectively avoid the generation of a region in which the transistors 23 and 24 cannot be formed, such as a bird's beak in the field oxide film, thereby improving the degree of integration of the transistors. I have.
[0025]
At this time, the printer head 21 removes the silicon oxide film from the region where the transistors 23 and 24 are formed, thereby reliably exposing the surface of the silicon substrate 25. Is formed, thereby preventing the occurrence of defects in the transistors 23 and 24.
[0026]
After the element isolation region 22 is formed in this manner, the printer head 21 cleans the silicon substrate 25, and then places the tungsten silicide / polysilicon / thermal oxide film gate in the region where the transistors 23 and 24 are formed. Is created. Further, the silicon substrate 25 is processed by an ion implantation step and a heat treatment step for forming source / drain regions, and MOS (Metal-Oxide-Semiconductor) type transistors 23 and 24 are formed. Here, the switching transistor 23 is a MOS driver transistor having a withstand voltage of about 25 [V], and is used for driving a heating element. On the other hand, the switching transistor 24 is a transistor constituting an integrated circuit for controlling the driver transistor, and operates at a voltage of 5 [V]. In this embodiment, a low-concentration diffusion layer is formed between the gate and the drain, and the driver transistor 23 is formed so as to secure a breakdown voltage by relaxing the electric field of electrons accelerated at that portion. Has been done.
[0027]
Subsequently, the printer head 21 has a PSG (Phosphorus Silicate Glass) film, which is a silicon oxide film to which phosphorus is added by the CVD method, and a BPSG (Boron Phosphorus Silicate Glass) film 26, which is a silicon oxide film to which boron and phosphorus are added. These layers are sequentially deposited with a film thickness of 0.1 [μm] and 1.0 to 2.0 [μm], whereby the first interlayer insulating film is formed with a film thickness sufficiently functioning as a heat storage layer.
[0028]
Then, after the photolithography process, C ₄ F ₈ / CO / O ₂ A contact hole 27 is formed on the silicon semiconductor diffusion layer (source / drain) by a reactive ion etching method using a / Ar-based gas.
[0029]
Subsequently, as shown in FIG. 2B, the printer head 21 is cleaned with dilute hydrofluoric acid, and then, by a sputtering method, a titanium contact metal film having a thickness of 0.05 [μm] and a thickness of 0.07 to 0.07 μm. A titanium nitride barrier metal film 28 of 0.1 [μm] is sequentially deposited. Subsequently, in the lamp annealing apparatus, heat treatment is performed in a 100% nitrogen gas atmosphere at 600 to 700 degrees for 30 to 120 seconds, whereby the titanium metal film of the printer head 21 is stabilized and the contact resistance is reduced. Further, the diffusion preventing property of the titanium nitride barrier metal film 28 through the crystal grain boundary is improved.
[0030]
Subsequently, as shown in FIG. 3C, in the printer head 21, a plug material layer 30 having a thickness of 0.5 to 1.0 [μm] is deposited by the CVD method until the contact hole 27 is filled. In the form (1), a surplus portion of the plug material layer 30 is removed to form a plug 31 as shown in FIG. Here, the plug 31 is a metal plug that connects the transistors 23 and 24 and the first-layer wiring pattern 32, and is made of tungsten having higher electromigration resistance than aluminum, which is a material of the wiring pattern. You.
[0031]
Specifically, after the printer head 21 is mounted on the chamber in the CVD apparatus, first, the tungsten hexafluoride gas (WF ₆ ), Silane gas (SiH ₄ ), The tungsten hexafluoride gas is reduced by the silane gas, and a tungsten film is formed on the titanium nitride barrier metal film 28. Subsequently, hydrogen gas (H ₂ ), The tungsten hexafluoride gas is reduced by the hydrogen gas, and the tungsten film formed on the titanium nitride barrier metal film 28 as a nucleus grows in vapor phase. Thereby, the tungsten film 30 in which the contact hole 27 is buried is deposited on the printer head 21. In this embodiment, the tungsten film 30 is formed by heating the silicon substrate 25 to 400 to 450 degrees.
[0032]
Subsequently, the tungsten film 30 excluding the portion deposited on the contact hole 27 is formed by the etch-back method. ₆ The titanium contact metal film and the titanium nitride barrier metal film 28 are etched by a fluorine-based gas such as ₂ Etching is performed with a chlorine-based gas such as the above, and a plug 31 made of tungsten is formed. As a result, even when the first interlayer insulating film is formed with a film thickness sufficiently functioning as a heat storage layer, the occurrence of electromigration due to energization of the transistors 23 and 24 is prevented, and the Disconnection of the formed plug 31 is prevented.
[0033]
In addition, the plug 31 is not limited to the case where the excess portion is removed by the etch-back method as described above, and may be formed by polishing and removing the excess portion by the CMP method. It is conceivable to use an abrasive that oxidizes and dissolves the film 30, the titanium contact metal film and the titanium nitride barrier metal film.
[0034]
After the plug 31 is formed in this manner, the printer head 21 is then made of titanium having a thickness of 0.02 [μm] by sputtering and a thickness of 0.02 [μm], as shown in FIG. ] And titanium and silicon having a thickness of 0.005 [μm] and aluminum added with 1 [at%] are sequentially deposited to a thickness of 0.4 to 0.5 [μm]. Subsequently, in the printer head 21, titanium having a thickness of 0.005 [μm] and titanium nitride oxide (TiON) as an antireflection film having a thickness of 0.025 [μm] are sequentially deposited to form a wiring pattern material layer. Is formed. Subsequently, in the printer head 21, the formed wiring pattern material layer is selectively removed by a photolithography process and a dry etching process, whereby the nitriding with a film thickness of 0.025 [μm] as viewed from the upper layer side is performed. Titanium oxide, titanium with a thickness of 0.005 [μm], aluminum with a thickness of 0.4 to 0.5 [μm], aluminum added with 1 [at%], titanium with a thickness of 0.005 [μm] A first-layer wiring pattern 32 made of titanium nitride having a thickness of 0.02 [μm] and titanium having a thickness of 0.02 [μm] is formed. In the printer head 21, the logic type integrated circuit is formed by connecting the MOS transistors 24 constituting the drive circuit with the wiring pattern 32 of the first layer and the plug 31 thus created.
[0035]
Subsequently, the printer head 21 is driven by TEOS (tetraethoxysilane: Si (OC ₂ H ₅ ) ₄ A silicon oxide film as an interlayer insulating film is deposited by the CVD method using () as a source gas. Subsequently, in the printer head 21, the silicon oxide film is planarized by applying a coating type silicon oxide film including SOG (Spin On Glass) and an etch-back method using a fluorine-based gas, and these steps are repeated twice. A second-layer interlayer insulating film 33 that insulates the first-layer wiring pattern 32 from the subsequent second-layer wiring pattern is formed of a 0.6-1.0 [μm] -thick silicon oxide film. . Incidentally, in the flattening of such an interlayer insulating film 33, the application of SOG is omitted, a silicon oxide film is deposited by a CVD method using TEOS, and then planarized by polishing and removing by a CMP method. Good.
[0036]
Subsequently, the printer head 21 performs a photolithography process, CHF ₃ / CF ₄ An opening is formed in the interlayer insulating film 33 by a dry etching process using a / Ar gas to form a via hole 34.
[0037]
Subsequently, as shown in FIG. 4F, after the silicon substrate 25 is cleaned, the printer head 21 is mounted on a sputter deposition chamber in a sputtering apparatus, and has a thickness of 0.08 [μm] by a sputtering method. A tantalum film is deposited, whereby a resistor film is formed on the silicon substrate 25.
[0038]
Subsequently, the printer head 21 is coated with a photoresist, which is a photosensitive resin, and is conveyed to an exposure device. A mask having a predetermined shape is placed on the silicon substrate 25 and irradiated with ultraviolet rays. Further, the portion of the printer head 21 immersed in the developing solution and irradiated with the ultraviolet rays is dissolved, whereby the heating element forming region is masked on the resistor film. Subsequently, the printer head 21 ₃ / Cl ₂ By the dry etching process using gas, the resistive element film other than the heating element formation region is removed, and the heating element 35 made of tantalum is formed.
[0039]
Subsequently, the printer head 21 is mounted on a sputtering film forming chamber in a sputtering apparatus, and is subjected to a sputtering process using aluminum as a target, thereby forming a wiring pattern material layer having a thickness of 0.3 to 0.6 [μm]. A film is formed.
[0040]
Subsequently, in the printer head 21, a photoresist is applied on the silicon substrate 25, a mask having a predetermined shape is placed, and the exposure is performed by the exposure device. Further, the printer head 21 is immersed in the developing solution to dissolve the exposed portion, thereby masking the wiring pattern forming area except the portion of the heating element 35 that heats the ink. And then BCl ₃ / Cl ₂ Excess wiring pattern material layers other than the region where the wiring pattern is formed are removed by the dry etching process using gas, whereby the second-layer wiring pattern 36 is formed in these portions. In the printer head 21, a wiring pattern for power supply and a wiring pattern for ground are formed by the wiring pattern 36 of the second layer thus formed, and the wiring pattern 36 for connecting the driver transistor 23 to the heating element 35. Is created.
[0041]
Subsequently, in the printer head 21, the portion of the heating element 35 for heating the ink is masked by a photolithography process, and the wiring pattern 36 in this portion is etched by a wet etching process using a chemical solution of phosphoric acid-nitric acid-acetic acid, As a result, only the heating element 35 at the portion where the ink is heated is exposed.
[0042]
Subsequently, after the printer head 21 is washed with running water and dried, as shown in FIG. 5G, silicon nitride having a thickness of 300 to 400 [nm] is deposited by the CVD method, and the insulating protection layer 37 is formed. It is formed. Here, the insulating protective layer 37 is a layer that insulates the second-layer wiring pattern 36 and that prevents direct contact between the heating element 35 and the ink.
[0043]
Subsequently, the printer head 21 is subjected to a heat treatment at 400 ° C. for 60 minutes in a nitrogen gas (forming gas) atmosphere containing 4% hydrogen or in a 100% nitrogen gas atmosphere in a heat treatment furnace. . As a result, in the printer head 21, the operations of the transistors 23 and 24 are stabilized, and the connection between the first-layer wiring pattern 32 and the second-layer wiring pattern 36 is stabilized, so that the contact resistance is reduced.
[0044]
After the printer head 21 is mounted on a sputter deposition chamber in a DC magnetron sputtering apparatus, a cavitation-resistant material film of β-tantalum is deposited to a thickness of 200 [nm] by a sputtering method. Subsequently, the printer head 21 is patterned into a desired shape by a photoresist process, ₃ / Cl ₂ The anti-cavitation layer material film is etched by a dry etching process using a gas, whereby the anti-cavitation layer 38 is formed. Here, the anti-cavitation layer 38 is a layer for alleviating mechanical shock due to cavitation generated each time the foaming and defoaming of ink is repeated, thereby preventing disconnection of the lower heating element 35. I have.
[0045]
As shown in FIG. 1, after the dry film 41 of the organic resin is disposed by pressure bonding, the portion corresponding to the ink liquid chamber 44 and the ink flow path is removed from the printer head 21, and then the printer head 21 is cured. Thereby, a partition wall of the ink liquid chamber 44, a partition wall of the ink flow path, and the like are formed.
[0046]
Subsequently, after each chip is scribed, the nozzle plate 42 is laminated. Here, the nozzle plate 42 is a plate-like member processed into a predetermined shape so as to form a nozzle 43 which is a minute ink discharge port on the heating element 35, and is held on the dry film 41 by adhesion. As a result, the printer head 21 is formed by forming the nozzle 43, the ink liquid chamber 44, the ink flow path for guiding the ink to the ink liquid chamber 44, and the like.
[0047]
In the printer head 21, such an ink liquid chamber 44 is formed so as to be continuous in the depth direction of the paper surface, thereby forming a line head.
[0048]
(2) Operation of the embodiment
In the above configuration, in the printer head 21, the element isolation region 22 is formed in the silicon substrate 25 which is a semiconductor substrate, the transistors 23 and 24 which are semiconductor elements are formed, and the plug 31 is formed by being insulated by the insulating layer. . Subsequently, after the first-layer wiring pattern 32 is formed, the heating element 35 is formed by being insulated by the insulating layer, and the second-layer wiring pattern 36 is formed. Subsequently, after the insulating protection layer 37 is formed, the heat treatment stabilizes the connection between the wiring patterns and the connection between the wiring pattern and the heating element and the like, and the cavitation-resistant layer 38, the ink liquid chamber 44, and the nozzle 43 are formed. It is formed by being sequentially formed (FIGS. 1 to 5).
[0049]
In this printer, the ink is guided to the ink liquid chamber 44 of the printer head 21 created in this manner, and the ink held in the ink liquid chamber 44 is heated by the driving of the heating element 35 by the transistors 23 and 24 to generate bubbles. Is generated, and the pressure in the ink liquid chamber 44 rapidly increases due to the bubbles. In the printer, the ink in the ink liquid chamber 44 jumps out from the nozzle 43 as ink droplets due to the increase in the pressure, and the ink droplets adhere to the target paper or the like.
[0050]
In the printer, such driving of the heating element 35 is intermittently repeated, whereby a desired image or the like is printed on an object. Thus, in the printer head 21, the heat propagation due to the driving of the heating element 35 is reduced by the element isolation region 22, the first-layer and second-layer interlayer insulating films 26 and 33, whereby the transistors 23 and 24 are reduced. Is protected.
[0051]
In the printer head 21 according to the present embodiment, the transistors 23 and 24 are insulated and isolated, and the element isolation region 22 functioning as such a heat storage layer is formed by a trench structure. That is, in the printer head 21, a trench is formed by dry-etching the silicon substrate 25 in a region other than a region where the transistors 23 and 24 are formed, a silicon oxide film is deposited in the trench by the CVD method, and a trench other than the trench is formed by the CMP method. A surplus silicon oxide film at the portion is polished and removed, and an element isolation region 22 is formed. As a result, in the printer head 21, it is possible to effectively avoid the occurrence of a footing portion in which the transistors 23 and 24 cannot be formed, such as a bird's beak in the field oxide film, thereby improving the degree of integration of the transistors 23 and 24. can do.
[0052]
At this time, in the formation region of the transistors 23 and 24, the occurrence of defects can be prevented. Subsequently, the silicon oxide film is removed so that the surface of the silicon substrate 25 is surely exposed. , 24 can prevent the occurrence of a leakage current in the transistors 23 and 24, thereby ensuring reliability.
[0053]
(3) Effects of the embodiment
According to the above configuration, the element isolation region for insulating and isolating the transistor, which is a semiconductor element, is formed by the trench structure, so that the integration degree can be improved and the reliability can be ensured.
[0054]
(4) Other embodiments
In the above-described embodiment, a case has been described where a logic integrated circuit is formed by connecting transistors using a first-layer wiring pattern and a metal plug, but the present invention is not limited to this. The present invention can be widely applied to a case where a logic integrated circuit is formed by directly connecting a pattern to a transistor.
[0055]
Further, in the above-described embodiment, the case where the heating element is formed of tantalum has been described. However, the present invention is not limited to this, and instead, the tantalum nitride (TaN _X ) And a heating element formed of a tantalum compound such as tantalum aluminum (TaAl).
[0056]
Further, in the above-described embodiment, the case where the present invention is applied to the printer head to eject ink droplets has been described. However, the present invention is not limited to this, and instead of ink droplets, various dye droplets, A printer head using droplets for forming a protective layer, and a microdispenser in which droplets are reagents, various measuring devices, various test devices, and various pattern drawing devices in which droplets are agents for protecting members from etching. Etc. can be widely applied.
[0057]
【The invention's effect】
As described above, according to the present invention, by forming an element isolation region for insulating and isolating a semiconductor element by a trench structure, the integration degree can be improved and the reliability can be ensured.
[Brief description of the drawings]
FIG. 1 is a sectional view showing a printer head according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view for explaining a process of producing the printer head of FIG. 1;
FIG. 3 is a sectional view showing a continuation of FIG. 2;
FIG. 4 is a sectional view showing a continuation of FIG. 3;
FIG. 5 is a sectional view showing a continuation of FIG. 4;
FIG. 6 is a cross-sectional view showing a heating element in a conventional printer head together with its peripheral configuration.
[Explanation of symbols]
1, 21, a printer head, 2, 25, a silicon substrate, 3, 22, an element isolation region, 4, 5, 23, 24, a transistor, 6, 8, 30, 36, a wiring pattern, 9, 35 ... heating element

Claims (4)

In a liquid ejection head that drives a heating element by a semiconductor element to heat a liquid held in a liquid chamber and eject a droplet of the liquid from a predetermined nozzle,
After forming a trench by dry etching on a predetermined substrate, a material film of an element isolation region is formed, and an element isolation region for insulating and isolating the semiconductor element by removing an excess material film of the element isolation region is formed. A liquid ejection head formed. 2. The liquid discharge head according to claim 1, wherein the material film of the element isolation region is silicon oxide. In a liquid ejection device that ejects droplets by driving a heating element provided in a liquid ejection head,
The liquid ejection head,
After a predetermined substrate is dry-etched to form a trench, a material film for an element isolation region is formed, and an excess material film for the element isolation region is removed to form an element isolation region for insulating and isolating a semiconductor element. A liquid ejection device characterized by being performed. In a method of manufacturing a liquid ejection head for ejecting liquid droplets by driving a heating element by a semiconductor element,
After a predetermined substrate is dry-etched to form a trench, a material film for an element isolation region is formed, and an excess material film for the element isolation region is removed to form an element isolation region for insulating and isolating the semiconductor element. A method for manufacturing a liquid discharge head, comprising:

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