JP2004248390A - Semiconductor power converter - Google Patents
Semiconductor power converter Download PDFInfo
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- JP2004248390A JP2004248390A JP2003034728A JP2003034728A JP2004248390A JP 2004248390 A JP2004248390 A JP 2004248390A JP 2003034728 A JP2003034728 A JP 2003034728A JP 2003034728 A JP2003034728 A JP 2003034728A JP 2004248390 A JP2004248390 A JP 2004248390A
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- Prior art keywords
- short
- circuit protection
- fuse
- power converter
- semiconductor element
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Abstract
Description
【0001】
【発明の属する技術分野】
本発明は、半導体電力変換装置に関し、特に、半導体素子用短絡保護ヒューズの劣化診断を行うことが可能な半導体電力変換装置に関するものである。
【0002】
【従来の技術】
半導体電力変換装置においては、電力変換装置を半導体素子の故障による回路短絡から保護するため、半導体素子と直列に半導体素子用短絡保護ヒューズ(以下、短絡保護ヒューズと略す)が接続されている。
【0003】
ところで、ヒューズの劣化に対処するため、従来、電動機などの制御回路に使用されているヒューズについては、ヒューズの自然劣化などによりヒューズが溶断した場合に、予備の第2のヒューズに切替えられるとともに警報回路を作動させるようにしたものがある(例えば、特許文献1参照。)。
【0004】
また、ヒューズと保護リレーからなる保護継電装置においては、保護リレーの動作特性とヒューズの劣化開始特性とを記憶し、定格電流値を越える事故電流値が発生した時、その事故電流値に対応する保護リレーの遮断所要時間が事故電流値に対応するヒューズの劣化開始時間より長い場合は、ヒューズ劣化履歴が発生したと判断して警告出力するようにしたものがある(例えば、特許文献2参照。)。
【0005】
しかし、半導体電力変換装置においては、従来、装置運転中に短絡保護ヒューズの経年劣化や疲労劣化を判別する手段は設けられていない。
【0006】
【特許文献1】
実公平7−18120号公報(第2−3頁、図1)
【特許文献2】
特開平8−236006号公報(第4−5頁、図2−4)
【0007】
【発明が解決しようとする課題】
上述のように、従来の半導体電力変換装置においては、装置運転中に短絡保護ヒューズの経年劣化や疲労劣化を判別する手段は設けられていないため、劣化を判別することができず、装置の運転を停止させ、短絡保護ヒューズを装置から取外して単体試験をしなければ、劣化診断できなかった。そのため、半導体素子を並列接続して使う半導体電力変換装置では、1つの短絡保護ヒューズが劣化して導通がなくなっても、並列接続された他のヒューズ及び半導体素子からなる健全な回路で運転継続がなされ、劣化に気付かず、健全な短絡保護ヒューズ及び半導体素子に大きな負担をかける可能性があった。
【0008】
本発明は、従来のこのような点に鑑みて為されたもので、装置の運転中でも半導体素子用短絡保護ヒューズの劣化診断を行うことが可能な半導体電力変換装置を提供することを目的とする。
【0009】
【課題を解決するための手段】
上記目的を達成するために、本発明に係る半導体電力変換装置は、電力変換装置を半導体素子の故障による回路短絡から保護するための半導体素子用短絡保護ヒューズのそれぞれに設けられ、半導体素子用短絡保護ヒューズの温度を検出する温度センサーと、装置運転中、半導体素子用短絡保護ヒューズのそれぞれの温度を検出して温度センサーのそれぞれから出力されるセンサー信号を常時監視し、半導体素子用短絡保護ヒューズの温度が所定値より低下したとき、その半導体素子用短絡保護ヒューズが劣化したと判定する手段とを備えたことを特徴とする。
【0010】
このような構成の本発明によれば、装置の運転中でも半導体素子用短絡保護ヒューズの劣化診断を行なうことができる。
【0011】
【発明の実施の形態】
以下、図面を参照して本発明の実施形態について詳細に説明する。
【0012】
図1は、本発明に係る半導体電力変換装置の一実施形態の概略構成を示す図である。
【0013】
同図において、1は交流電源、2は交流電源を直流電源に変換する整流器(例えばサイリスタ整流器)である。この整流器2は、例えば図示のように、U、V、W、およびX、Y、Zの各相の整流器からなり、1相当り、半導体素子(例えばサイリスタ素子)3と電力変換装置を半導体素子3の故障による回路短絡から保護するための短絡保護ヒューズ4とを直列に接続した回路を複数個並列接続して構成されることまでは、従来の半導体電力変換装置の構成と同じである。
【0014】
この実施形態は、図1に示すように、従来の構成に加えて、温度センサー5と制御装置6とからなる短絡保護ヒューズの劣化診断装置を設けたものである。すなわち、各短絡保護ヒューズ4に、短絡保護ヒューズ4の温度を検出する温度センサー5をそれぞれ取付け、短絡保護ヒューズ4の温度を検出して温度センサー5のそれぞれから出力されるセンサー信号を制御装置6に取込み、変換装置運転中、センサー信号を常時監視する。短絡保護ヒューズ4が劣化すると、短絡保護ヒューズ4のインピーダンスが大きくなり、電流が流れにくくなるため、短絡保護ヒューズ4の温度が低くなることを利用し、変換装置運転中でも、短絡保護ヒューズ4の劣化を診断するように構成している。
【0015】
次に、図2に示す制御フローを参照して、この実施形態における短絡保護ヒューズの劣化診断動作を説明する。
【0016】
まず、変換装置運転中、温度センサー5のそれぞれから出力されるセンサー信号を制御装置6に取込むことにより、各短絡保護ヒューズ5の温度が入力され、制御装置6において、入力された各短絡保護ヒューズ5の温度のデータを、次のように、各相毎のデータに分ける(ステップS201)。
【0017】
U相:Tu−1、Tu−2、……………、Tu−n
V相:Tv−1、Tv−2、……………、Tv−n
……………………………………………………
Z相:Tz−1、Tz−2、……………、Tz−n
次に、各相のヒューズ温度の平均値Ta−u、Ta−v、…、Ta−z、および各相のヒューズ温度の標準偏差σu、σv、…、σzを算出した上で、次のように、各ヒューズ温度の偏差値を算出する(ステップS202)。
【0018】
U相1番:Su−1=(Tu−1−Ta−u)/σu×10+50
U相2番:Su−2=(Tu−2−Ta−u)/σu×10+50
……………………………………………………
Z相n番:Sz−n=(Tz−n−Ta−z)/σz×10+50
そして、算出された各ヒューズ温度の偏差値Su−1、Su−2、…、Sz−nをヒューズの劣化判定値Lと比較し、ヒューズの劣化判定値Lより小さければ劣化と判定することにより、各短絡保護ヒューズ4のそれぞれについての劣化診断を行う(ステップS203)。
【0019】
この劣化診断動作を、変換装置運転中、所定の周期で繰り返す。
【0020】
以上説明したように、この実施形態によれば、各短絡保護ヒューズ4の劣化診断のために変換装置の運転を停止させ、短絡保護ヒューズを変換装置から取外して単体試験を行う必要がなく、変換装置運転中でも、短絡保護ヒューズ4の劣化診断をすることができる。従って、万が一いくつかの短絡保護ヒューズ4に劣化があっても、診断結果に基づき、これらを取り換えることにより、健全な短絡保護ヒューズ4や半導体素子3への負担増加を未然に防ぐことが可能となる。
【0021】
【発明の効果】
以上説明したように、本発明の半導体電力変換装置によれば、装置の運転中でも半導体素子用短絡保護ヒューズの劣化診断を行うことができる。
【図面の簡単な説明】
【図1】本発明に係る半導体電力変換装置の一実施形態の概略構成図。
【図2】本発明の一実施形態における短絡保護ヒューズの劣化診断動作を説明するための制御フロー図。
【符号の説明】
1…交流電源
2…整流器
3…半導体素子
4…短絡保護ヒューズ
5…温度センサー
6…制御装置[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor power conversion device, and more particularly to a semiconductor power conversion device capable of performing deterioration diagnosis of a short-circuit protection fuse for a semiconductor element.
[0002]
[Prior art]
2. Description of the Related Art In a semiconductor power conversion device, a short-circuit protection fuse for a semiconductor device (hereinafter abbreviated as a short-circuit protection fuse) is connected in series with the semiconductor device in order to protect the power conversion device from a short circuit due to a failure of the semiconductor device.
[0003]
By the way, in order to cope with the deterioration of the fuse, the fuse conventionally used in the control circuit of the electric motor or the like is switched to the spare second fuse when the fuse is blown due to the spontaneous deterioration of the fuse and the alarm is issued. There is one in which a circuit is operated (for example, see Patent Document 1).
[0004]
In the case of a protective relay consisting of a fuse and a protection relay, the operating characteristics of the protection relay and the degradation start characteristics of the fuse are stored, and when an accident current value exceeding the rated current value occurs, the fault current value is handled. If the time required to shut off the protection relay to be activated is longer than the fuse degradation start time corresponding to the fault current value, a fuse degradation history is determined to have occurred and a warning is output (for example, see Patent Document 2). .).
[0005]
However, in the semiconductor power conversion device, conventionally, there is no means for determining the aging or fatigue deterioration of the short-circuit protection fuse during operation of the device.
[0006]
[Patent Document 1]
Japanese Utility Model Publication No. 7-18120 (page 2-3, FIG. 1)
[Patent Document 2]
JP-A-8-236006 (page 4-5, FIG. 2-4)
[0007]
[Problems to be solved by the invention]
As described above, in the conventional semiconductor power conversion device, since there is no means for determining aging or fatigue deterioration of the short-circuit protection fuse during operation of the device, deterioration cannot be determined, and operation of the device cannot be determined. Was stopped, the short-circuit protection fuse was removed from the apparatus, and a unit test was not performed. Therefore, in a semiconductor power converter that uses semiconductor elements connected in parallel, even if one short-circuit protection fuse deteriorates and no longer conducts, the operation can be continued with a healthy circuit composed of other fuses and semiconductor elements connected in parallel. In this case, there is a possibility that a heavy load is imposed on a sound short-circuit protection fuse and a semiconductor element without noticing deterioration.
[0008]
The present invention has been made in view of such a conventional point of view, and an object of the present invention is to provide a semiconductor power conversion device capable of performing deterioration diagnosis of a short-circuit protection fuse for a semiconductor element even during operation of the device. .
[0009]
[Means for Solving the Problems]
In order to achieve the above object, a semiconductor power conversion device according to the present invention is provided in each of a semiconductor element short-circuit protection fuse for protecting the power conversion device from a circuit short circuit due to a failure of a semiconductor element. A temperature sensor that detects the temperature of the protection fuse and a short-circuit protection fuse for the semiconductor element that detects the temperature of each of the short-circuit protection fuses for the semiconductor element during operation of the device and constantly monitors the sensor signals output from each of the temperature sensors. Means for determining that the semiconductor element short-circuit protection fuse has deteriorated when the temperature of the semiconductor device has dropped below a predetermined value.
[0010]
According to the present invention having such a configuration, deterioration diagnosis of the short-circuit protection fuse for a semiconductor element can be performed even during operation of the apparatus.
[0011]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0012]
FIG. 1 is a diagram showing a schematic configuration of an embodiment of a semiconductor power conversion device according to the present invention.
[0013]
In FIG. 1,
[0014]
In this embodiment, as shown in FIG. 1, in addition to a conventional configuration, a deterioration diagnosis device for a short-circuit protection fuse including a temperature sensor 5 and a control device 6 is provided. That is, a temperature sensor 5 for detecting the temperature of the short-circuit protection fuse 4 is attached to each short-circuit protection fuse 4, and the temperature of the short-circuit protection fuse 4 is detected and the sensor signal output from each of the temperature sensors 5 is transmitted to the control device 6. And constantly monitor the sensor signal during the operation of the converter. When the short-circuit protection fuse 4 is deteriorated, the impedance of the short-circuit protection fuse 4 increases and the current becomes difficult to flow. It is configured to diagnose.
[0015]
Next, the deterioration diagnosis operation of the short-circuit protection fuse in this embodiment will be described with reference to the control flow shown in FIG.
[0016]
First, during operation of the converter, the sensor signal output from each of the temperature sensors 5 is taken into the control device 6, so that the temperature of each short-circuit protection fuse 5 is input. The temperature data of the fuse 5 is divided into data for each phase as follows (step S201).
[0017]
U phase: Tu-1, Tu-2,..., Tu-n
V phase: Tv-1, Tv-2,..., Tv-n
………………………………………………
Z phase: Tz-1, Tz-2,..., Tz-n
Next, after calculating the average values Ta-u, Ta-v,..., Ta-z of the fuse temperatures of each phase and the standard deviations σu, σv,. Next, a deviation value of each fuse temperature is calculated (step S202).
[0018]
U-phase No. 1: Su-1 = (Tu-1-Ta-u) / σu × 10 + 50
U-phase No. 2: Su-2 = (Tu-2-Ta-u) / σu × 10 + 50
………………………………………………
Z-phase nth: Sz-n = (Tz-n-Ta-z) / σz × 10 + 50
Then, the calculated deviation values Su-1, Su-2,..., Sz-n of the respective fuse temperatures are compared with the deterioration determination value L of the fuse. Then, a deterioration diagnosis is performed for each of the short-circuit protection fuses 4 (step S203).
[0019]
This deterioration diagnosis operation is repeated at a predetermined cycle during the operation of the converter.
[0020]
As described above, according to this embodiment, it is not necessary to stop the operation of the converter for the deterioration diagnosis of each short-circuit protection fuse 4 and remove the short-circuit protection fuse from the converter and perform a unit test. Even during the operation of the apparatus, the deterioration diagnosis of the short-circuit protection fuse 4 can be performed. Therefore, even if some of the short-circuit protection fuses 4 are deteriorated, by replacing them based on the diagnosis result, it is possible to prevent an increase in the load on the sound short-circuit protection fuses 4 and the semiconductor element 3 beforehand. Become.
[0021]
【The invention's effect】
As described above, according to the semiconductor power conversion device of the present invention, deterioration diagnosis of the short-circuit protection fuse for a semiconductor element can be performed even during operation of the device.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram of an embodiment of a semiconductor power conversion device according to the present invention.
FIG. 2 is a control flowchart for explaining a deterioration diagnosis operation of the short-circuit protection fuse according to the embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF
Claims (1)
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JP2003034728A JP4215238B2 (en) | 2003-02-13 | 2003-02-13 | Semiconductor power converter |
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JP2003034728A JP4215238B2 (en) | 2003-02-13 | 2003-02-13 | Semiconductor power converter |
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JP4215238B2 JP4215238B2 (en) | 2009-01-28 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006254574A (en) * | 2005-03-09 | 2006-09-21 | Yaskawa Electric Corp | Protective device of inverter |
JP2008206321A (en) * | 2007-02-21 | 2008-09-04 | Toshiba Mitsubishi-Electric Industrial System Corp | Power converter |
JP2009159661A (en) * | 2007-12-25 | 2009-07-16 | Nec Tohoku Ltd | Stabilized power supply and control method therefor |
CN104333208A (en) * | 2014-10-27 | 2015-02-04 | 中南大学 | Device for handling open-circuit fault of three-section bridge converter circuit and fault diagnosis method |
GB2527074A (en) * | 2014-06-10 | 2015-12-16 | Sicame Uk Ltd | Smart cut-out carrier |
-
2003
- 2003-02-13 JP JP2003034728A patent/JP4215238B2/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006254574A (en) * | 2005-03-09 | 2006-09-21 | Yaskawa Electric Corp | Protective device of inverter |
JP2008206321A (en) * | 2007-02-21 | 2008-09-04 | Toshiba Mitsubishi-Electric Industrial System Corp | Power converter |
JP2009159661A (en) * | 2007-12-25 | 2009-07-16 | Nec Tohoku Ltd | Stabilized power supply and control method therefor |
GB2527074A (en) * | 2014-06-10 | 2015-12-16 | Sicame Uk Ltd | Smart cut-out carrier |
CN104333208A (en) * | 2014-10-27 | 2015-02-04 | 中南大学 | Device for handling open-circuit fault of three-section bridge converter circuit and fault diagnosis method |
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