JP2004246393A - Method for manufacturing semiconductor display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor display device having a uniform cell thickness and showing favorable display characteristics. <P>SOLUTION: In an active matrix semiconductor display device having a pixel TFT and a driving circuit TFT integrally fabricated on one substrate, the cell gap is controlled by a cell gap holding material disposed between the pixel region and the driving circuit region. Thereby, a uniform cell gap can be obtained over the entire semiconductor display device. Since a conventional granular spacer is not used, no stress is induced in the driving circuit TFT during laminating the active matrix substrate with a counter substrate. Thus, damages on the driving circuit TFT can be prevented. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

  The invention disclosed in this specification relates to a semiconductor display device using a thin film transistor. In particular, the present invention relates to a semiconductor display device in which a pixel switching circuit and a drive circuit are formed integrally on the same substrate.

  Recently, a technique for manufacturing a semiconductor device in which a semiconductor thin film is formed on an inexpensive glass substrate, for example, a thin film transistor (TFT) has been rapidly developed. The reason is that the demand for the active matrix type liquid crystal display device has been increased.

  In an active matrix type liquid crystal display device, TFTs are arranged in several tens to several millions of pixel regions arranged in a matrix, and electric charges flowing into and out of each pixel electrode are controlled by a switching function of the TFTs.

  Here, a basic configuration of an active matrix liquid crystal display device in which thin film transistors are arranged will be described with reference to FIG. First, FIG. 1A is a cross-sectional view of a liquid crystal display device cut in a direction perpendicular to a substrate. This cross section corresponds to a cross section cut along a dashed line indicated by AA ′ in FIG.

  The base substrate 101 is light-transmitting, and has an insulating film formed on the surface of the substrate (not shown). 102 is an active layer of a TFT, 103 is a gate electrode, 104 is a data line, 105 is a drain electrode, 106 is an interlayer insulating film, 107 is a black matrix, 108 is a pixel electrode made of a transparent conductive film, and 109 is an alignment film. .

  The entire substrate on which the TFT having the above-described configuration is arranged is referred to as an active matrix substrate. Although FIG. 1A focuses on only one pixel, in actuality, a pixel region including several tens to several millions of pixel switching TFTs (referred to as pixel TFTs) and driving them are provided. An active matrix substrate is constituted by a peripheral driving circuit region including a plurality of TFTs.

  On the other hand, 110 is a light-transmitting substrate, 111 is a counter electrode made of a transparent conductive film, and 112 is an alignment film. The entire substrate facing the active matrix substrate having such a configuration is referred to as a counter substrate.

  As shown in FIG. 2A, the active matrix substrate and the counter substrate are subjected to an alignment treatment such as rubbing for adjusting the alignment of a liquid crystal material. Thereafter, in order to control the distance between the active matrix substrate and the opposing substrate (cell gap), granular spacers are uniformly dispersed on the entire surface of the active matrix substrate. Next, a sealant is printed. The sealant has a role as an adhesive for bonding the substrates together and a role as a sealant for sealing the liquid crystal material injected between the substrates so as not to leak outside the substrates.

  FIG. 3 is a sectional view of the active matrix substrate. As shown in FIG. 3, since the spacers in the form of particles are uniformly dispersed on the entire surface of the active matrix substrate to control the cell gap, the spacers exist not only in the pixel region but also in the peripheral driving circuit region. . Usually, there is not much difference in the size of the element between the pixel TFT and the driving circuit TFT. However, in the pixel area, a black matrix covering the pixel TFT, a pixel electrode made of a transparent conductive film, and the like are formed. In a reflection type liquid crystal display device, a reflection electrode is formed in a pixel region. Further, a connection line is formed in the drive circuit region to form a CMOS circuit for driving the pixel TFT. Therefore, the pixel region and the drive circuit region differ in height (distance) from the surface of the underlying substrate.

  Here, a case where the height of the pixel region from the substrate surface is higher than that of the drive circuit region will be described as an example. The granular spacers are dispersed not only in the pixel region but also in the drive circuit region by a wet or dry method. Assuming that the granular spacer has a substantially uniform size, a height difference from the substrate occurs depending on the position of the spacer. The heights of the upper surfaces of the spacers located on the pixel region and the drive circuit region from the substrate are hp and hd, respectively. It can be seen that a height difference Δh = hp−hd occurs due to a difference in size between the pixel region and the drive circuit region.

  Next, as shown in FIG. 4A, the active matrix substrate and the counter substrate are bonded to each other. Thereafter, a liquid crystal material is filled between the active matrix substrate and the counter substrate, and the liquid crystal injection port is sealed with a sealing material (FIG. 4B). Thus, an active matrix liquid crystal display device having a structure as shown in FIG. 1A is manufactured.

  However, the liquid crystal display having the above configuration has the following problems.

  Due to the height difference Δh due to the difference in size between the pixel region and the drive circuit region, when the active matrix substrate and the counter substrate are bonded together, the cell gap cannot be made uniform and cell thickness unevenness occurs. Would. In addition, as shown in FIGS. 4A and 4B, the counter substrate is distorted. Defects such as display unevenness and interference fringes appearing on the upper surface of the counter substrate appear in the liquid crystal display device in which the cell thickness unevenness and the counter substrate are distorted.

  Further, taking an example in which the height of the drive circuit region from the substrate surface is higher than that of the pixel region, when the active matrix substrate and the counter substrate are bonded to each other due to the height difference Δh described above. In addition, an excessively large force is applied to the spacers scattered on the drive circuit area, and the drive circuit TFT having a more complicated structure than the pixel TFT is considerably damaged. As a result, the product yield is affected.

  Further, as shown in FIG. 1B, when a granular spacer 115 is present in the pixel region, a disorder of image display (disclination) is observed in the vicinity of the spacer 115 because the orientation of the liquid crystal material is disrupted. May be done.

  As described above, in the case where the cell gap is controlled using the conventional granular spacers, good display may not be obtained due to various factors.

  In general, a liquid crystal display device manufactured or prototyped seems to have a cell gap of about 4 to 6 μm irrespective of the pixel pitch, but in the future, a higher definition of the liquid crystal panel is required. The tendency to further miniaturize the pixel pitch is increasing.

  For example, it is desirable that a projection-type liquid crystal display device (projection) can display an image with the highest possible definition in consideration of enlarging and projecting an image on a screen. It is also necessary to reduce the size of the optical system from the viewpoint of cost, and it is necessary to reduce the size of the panel. For this reason, it is necessary to fabricate a liquid crystal display device having a pixel pitch of 40 μm or less, preferably 30 μm or less.

  In a liquid crystal display device requiring such a high-definition image, display quality is degraded even when a granular spacer of several μm exists in an effective display area.

  Further, in the conventional granular spacer, when the liquid crystal material is injected, the granular spacer itself flows due to the flow of the liquid crystal material, and as a result, a uniform spacer distribution density cannot be obtained, which may cause uneven cell thickness. There was something.

  In addition, a liquid crystal display device using a ferroelectric liquid crystal and a reflection type liquid crystal display device that have recently attracted attention require a small cell gap due to its characteristics.

  However, it is generally difficult to produce a cell having a small and uniform cell gap using a conventional granular spacer.

  An object of the present invention is to provide a semiconductor display device having no cell thickness unevenness and display unevenness by manufacturing a cell having a small and uniform cell gap, which has been difficult using a conventional granular spacer. And Another object of the present invention is to prevent the use of unnecessary stress that has occurred in the TFT during the bonding of the substrates when a conventional granular spacer is used, so that the TFT is not damaged. I do.

  According to an embodiment of the present invention, the pixel region includes at least a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors, and includes a plurality of thin film transistors driving the plurality of thin film transistors. A first substrate including at least a plurality of driving circuits, a driving circuit region provided in a location different from the pixel region, and a base substrate; a second substrate facing the first substrate; A semiconductor display element including at least a plurality of gap holding members and a sealant for bonding a second substrate facing the first substrate, wherein the sealant includes a sealant that adheres to a surface of the base substrate to a surface of the pixel region. The distance is different from the distance from the surface of the base substrate to the surface of the drive circuit region, and the plurality of gap holding materials are The semiconductor display device formed in a region other than the band and the driving circuit region is provided. This achieves the above object.

  According to another embodiment of the present invention, a pixel region having at least a plurality of pixel electrodes arranged in a matrix and a plurality of pixel thin film transistors connected to each of the plurality of pixel electrodes, and the plurality of pixel thin film transistors An active matrix substrate including at least a driving circuit region having at least a driving circuit constituted by a plurality of thin film transistors to be driven; a base substrate; a counter substrate facing the active matrix substrate; the active matrix substrate and the counter substrate A display medium, the optical response of which is controlled by an applied voltage, and a semiconductor display device including at least a distance from a surface of the base substrate to a surface of the pixel region; Is different from the distance from the surface of the Ri, wherein the plurality of gap retaining member is a semiconductor display device formed in a region other than the pixel region and the driver circuit region is provided. This achieves the above object.

  The display medium may have an optical property modulated in response to an applied voltage.

  The display medium may be a liquid crystal material.

  The plurality of gap retaining members may be formed around the pixel region.

  The arrangement density of the plurality of gap holding members may be uniform in the pixel region.

  The gap holding material may be cylindrical.

  The gap retaining material may be elliptical columnar.

  The gap retaining material may be polygonal prism-shaped.

  The gap holding material may have a shape that does not hinder the flow of the liquid crystal material when the liquid crystal material is injected.

  The side surface shape of the gap holding member may be tapered.

  The gap holding material may be made of any one of polyimide, acrylic, polyamide, and polyimide amide.

  The gap holding material may be made of an ultraviolet curable resin.

  The gap holding material may be made of an epoxy resin.

  The display medium may be a mixed layer of a liquid crystal material and a polymer.

  The display medium may be an electroluminescent device.

  According to the present invention, since a cell gap is controlled by a plurality of gap holding members, a small and uniform cell thickness can be obtained over the entire semiconductor display device.

  Further, according to the present invention, no stress is applied to the pixel TFT and the driving circuit TFT when the active matrix substrate is bonded to the counter substrate, so that the pixel TFT and the driving circuit TFT are not damaged.

  According to the present invention, a semiconductor display device having a uniform cell thickness without a cell thickness distribution can be obtained. Further, according to the present invention, since a cell gap can be secured without dispersing a granular spacer, it is possible to prevent an unnecessary force from being applied to the driving circuit TFT when bonding substrates. Yield is improved.

  In the present invention, a pixel switching TFT and a driving circuit TFT are integrally formed on the same substrate to manufacture a semiconductor display device.

  (Example 1)

  A method for manufacturing the semiconductor display device of this embodiment will be described below. First, fabrication of an active matrix substrate will be described with reference to FIGS. The left part of each figure shows the manufacturing process of the drive circuit TFT, and the right part shows the manufacturing process of the pixel TFT.

  First, reference is made to FIG. A silicon oxide film 502 having a thickness of 100 to 300 nm is formed as a base oxide film on a quartz substrate or a glass substrate 501. As a method for forming the silicon oxide film 502, a sputtering method in an oxygen atmosphere or a plasma CVD method may be used.

  Next, an amorphous or polycrystalline silicon film is formed to a thickness of 30 to 150 nm, preferably 50 to 100 nm by a plasma CVD method or an LPCVD method. Then, thermal annealing is performed to crystallize the silicon film. The thermal annealing is performed at a temperature of 500 ° C. or more, preferably 800 to 900 ° C. After the silicon film is crystallized by thermal annealing, the crystallinity may be further improved by performing optical annealing. Further, when the silicon film is crystallized by thermal annealing, an element (catalytic element) such as nickel is added to promote crystallization of silicon, as disclosed in JP-A-6-244104. You may.

  Next, an active layer (P-channel TFT active layer 503, N-channel TFT active layer 504) of the island-shaped peripheral driving circuit TFT and a pixel TFT active layer 505 are formed. Although three TFTs are shown in FIG. 5 for convenience, actually, several million TFTs are formed at the same time.

Further, a gate insulating film 506 of silicon oxide having a thickness of 50 to 200 nm is formed by sputtering in an oxygen atmosphere. As a method for forming the gate insulating film, a plasma CVD method may be used. In the case where a silicon oxide film is formed by a plasma CVD method, it is preferable to use dinitrogen monoxide (N ₂ O) or a mixed gas of oxygen (O ₂ ) and monosilane (SiH ₄ ) as a source gas.

  Thereafter, a polycrystalline silicon film having a thickness of 200 nm to 5 μm, preferably 200 to 600 nm is formed on the entire surface of the substrate by LPCVD. This polycrystalline silicon film may contain a small amount of phosphorus to increase conductivity. By etching this polycrystalline silicon film, gate electrodes 507, 508 and 409 are formed.

Next, as shown in FIG. 5B, self-aligned doping of phosphorus is performed on all the island-shaped active layers by using the gate electrode as a mask by an ion doping method. Phosphine (PH ₂ ) is used as the doping gas. The dose at this time is set to 1 × 10 ^{12 to} 5 × 10 ¹³ atoms / cm ² . As a result, weak N-type regions (N-regions) 510, 511, and 512 are formed.

Next, as shown in FIG. 5C, a photoresist mask 513 covering the active layer 503 of the P-channel TFT and a photoresist mask 514 covering the gate electrode 509 in the active layer 505 of the pixel TFT are formed. Form. The photoresist mask that covers the gate electrode covers the portion 3 μm away from the end of the gate electrode in parallel with the gate electrode. Then, phosphorus is implanted again by the ion doping method. Phosphine is used as the doping gas. The dose is set to 1 × 10 ^{14 to} 5 × 10 ¹⁵ atoms / cm ² . As a result, source / drains 515 and 516 of a strong N-type region (N + region) are formed. In the weak N-type region (N− region) 512 of the active layer 505 of the pixel TFT, the region 517 covered with the mask 514 is not doped with phosphorus by the current doping. Therefore, region 517 remains a weak N-type region.

Next, as shown in FIG. 6A, the active layers 504 and 505 of the N-channel TFT are covered with a photoresist mask 518. Then, ion doping is performed using diborane (B ₂ H ₆ ) as a doping gas, and boron is implanted into the island regions 503. The dose is set to 5 × 10 ¹⁴ to 8 × 10 ¹⁵ atoms / cm ² . In this doping, the dose of boron exceeds the dose of phosphorus doped in the step shown in FIG. 5C, so that the previously formed weak N-type region 510 is Invert to 519.

  Through the above doping, a strong N-type region (source / drain) 515, 516, a strong P-type region (source / drain) 519, and a weak N-type region (low-concentration impurity region) 517 are formed. In this embodiment, the width x of the low-concentration impurity region 517 is about 3 μm (FIG. 6A).

  Thereafter, thermal annealing is performed at 450 to 850 ° C. for 0.5 to 3 hours to activate the doping impurities and recover the crystallinity of silicon. By this thermal annealing treatment, damage to the silicon film due to doping is recovered.

  Next, as shown in FIG. 6B, an interlayer insulating film 520 of silicon oxide is formed on the entire surface by a plasma CVD method. The thickness of the interlayer insulating film 520 is 300 to 6000 nm. This interlayer insulating film 520 may be a silicon nitride film or a multilayer film of a silicon oxide film and a silicon nitride film. Next, the interlayer insulating film 520 is etched by a wet etching method to form contact holes at the source / drain.

  Thereafter, a titanium film having a thickness of 200 to 600 nm is formed by a sputtering method, and this is etched to form electrodes / wirings 521, 522, 523 of the driving circuit and electrodes / wirings 524, 525 of the pixel TFT. The electrodes / wirings 521, 522, 523 of the drive circuit and the electrodes / wirings 524, 525 of the pixel TFT may be formed of a multilayer film such as Ti-Al-Ti. Further, as shown in FIG. 6C, a polyimide film 526 having a thickness of 100 to 300 nm is formed. A photoresist 527 is formed on the polyimide film, and a contact hole reaching the electrode 525 of the pixel TFT is formed by photolithography. Next, as shown in FIG. 7A, an ITO (indium tin oxide) film 528 is formed to a thickness of 50 to 150 nm by a sputtering method. After that, as shown in FIG. 7B, a mask 529 is formed and etched to form a pixel electrode 530 (FIG. 7C). In the pixel region, at least one or more TFTs are arranged on each pixel electrode and are electrically connected. As the driving circuit, a shift register, an address decoder, or the like is used. Other circuits are configured as needed.

  Thus, an active matrix substrate in which a plurality of drive circuit TFTs (drive circuit regions) and a plurality of pixel TFTs (pixel regions) are integrally formed on the same substrate is manufactured. In this embodiment, the number of pixels is set to 1024 × 768. Note that, in this specification, a region where a pixel TFT including an endmost pixel TFT exists is referred to as a pixel region, and a region where a drive circuit TFT including an endmost driver TFT exists is referred to as a drive circuit region. To

  The TFT substrate is thoroughly washed, and various chemicals such as an etching solution and a resist stripping solution used for the surface treatment when forming the TFT are sufficiently washed.

  Next, a step of forming the gap holding material will be described. In the following description, the configurations of the drive circuit region and the pixel region are simplified as shown in FIG. In FIG. 8, the scale of each part is shown differently for convenience.

  First, as shown in FIG. 8B, a photosensitive polyimide film 801 was formed to a thickness of 2.2 μm by spin coating. Thereafter, in order to make the thickness of the photosensitive polyimide film 801 uniform over the entire surface of the active matrix substrate, the photosensitive polyimide film 801 was left at normal temperature for 30 minutes (leveling). Then, the active matrix substrate having the photosensitive polyimide film 801 formed on the upper surface was prebaked at 120 ° C. for 3 minutes.

  Next, the photosensitive polyimide film 801 is patterned. As shown in FIG. 8C, the photosensitive polyimide film 801 was covered with a photomask 802, and ultraviolet light was irradiated from above the active matrix substrate. Thereafter, development processing was performed, and post-baking was performed at 280 ° C. for 1 hour. Thus, as shown in FIG. 8D, a patterned cell gap holding material 803 was formed.

  FIG. 9A shows a top view of the active matrix substrate of this embodiment. FIG. 9B is an enlarged perspective view of a portion indicated by a dotted line in FIG. 9A of the active matrix substrate of this embodiment. 9A and 9B, for convenience, the scales of the gap holding material 803, the pixel region, and the driving circuit region are shown differently. In this embodiment, as shown in FIGS. 9A and 9B, the shape of the gap holding member 803 is a cylinder, and the diameter of the cylinder is 10 μm and the height is 2.2 μm. A plurality of gap holding members 803 were formed at a fixed interval of 30 μm and at an interval of about 70 μm from the pixel TFT at the end to surround the pixel region. In the vicinity of the liquid crystal material injection port, the density at which the gap holding material 803 is arranged is lower than other portions. Further, it is preferable that the arrangement density of the gap holding members is uniform in the pixel region.

  Note that the height accuracy of the gap holding member 803 according to the present invention is in demand. In this embodiment, the height accuracy of the gap holding member is set to ± 0.1 μm. On the other hand, regarding the accuracy of the position of the gap holding material, an accuracy of about ± 10 μm is sufficient. In this embodiment, the gap holding material 803 is formed between the pixel region and the drive circuit region. In this embodiment, the distance between the pixel region and the drive circuit region is about 400 nm, which is sufficiently larger than the diameter of the gap holding member 803. Therefore, the accuracy of the position of the gap holding member 803 is not so important. However, the gap holding material 803 is not formed in the pixel region and the drive circuit region.

  In the present embodiment, the shape of the gap holding material is cylindrical, but the shape of the gap holding material may be elliptical, streamlined, or polygonal such as triangular or quadrangular. Any shape is allowed as long as the shape can control the gap between the first substrate) and the opposing substrate (second substrate). Further, in the present embodiment, the gap holding members are all the same and are formed at regular intervals. However, gap holding members having a plurality of types of shapes may be formed at different intervals. Further, in this embodiment, the plurality of cell gap holding members are formed at a fixed interval from the pixel region, but the plurality of cell gap holding members may be formed at a plurality of different intervals from the pixel region. Further, in the present embodiment, the plurality of cell gap holding members are formed between the pixel region and the drive circuit region. However, if the cell gap is at a position where the cell gap can be controlled, the material may be anywhere in the pixel region and outside the drive circuit region. It may be formed.

  Next, an alignment film is formed on the active matrix substrate and the counter substrate. As the alignment film, a polyimide vertical alignment film was used. The polyimide-based vertical alignment film is coated on the active matrix substrate and the counter substrate by any one of spin coating, flexographic printing, and screen printing. In this embodiment, an alignment film is formed by a spin coating method. The thickness of the alignment film was 100 nm. Thereafter, heating (baking) was performed by sending hot air of 180 ° C. to cure the polyimide.

  Next, a rubbing treatment was performed in which the surface of the counter substrate on which the alignment film was formed was rubbed in a fixed direction with a buff cloth (fiber such as rayon or nylon) having a bristle length of 2 to 3 mm. In this embodiment, the rubbing treatment on the active matrix substrate side is not performed.

  Next, a sealant 1001 was applied to the outer frame of the active matrix substrate (FIG. 10A). After that, the active matrix substrate and the counter substrate were bonded together (FIG. 10B).

  Next, a liquid crystal material as a display medium is injected from a liquid crystal injection port 1002. Therefore, the liquid crystal material is held between the active matrix substrate and the counter substrate. In the present embodiment, since the shape of the gap holding material is cylindrical, the flow resistance between the liquid crystal material and the surface of the gap holding material, which is generated when the liquid crystal material is injected, is small. Therefore, the liquid crystal material could be uniformly injected over the entire surface of the substrate. In addition, it is preferable that the shape and arrangement of the gap holding agent reduce the flow resistance.

  Thereafter, a sealant (not shown) was applied to the liquid crystal material injection port, and the sealant was cured by irradiating ultraviolet rays to completely seal the liquid crystal material in the cell.

  When the display characteristics were actually examined using the manufactured cell, no interference fringes were observed on the cell surface. In addition, good display without disclination was obtained.

  (Example 2)

  In the present embodiment, the steps up to the step of forming a plurality of pixel TFTs and a plurality of drive circuit TFTs on the active matrix substrate are the same as those in the first embodiment, and a description thereof will be omitted.

  As shown in FIG. 7C, after the pixel TFT and the driving circuit TFT are integrally formed on the active matrix substrate, the cell gap holding material is formed on the active matrix substrate. Hereinafter, a step of forming the gap holding material in the present embodiment will be described.

  Please refer to FIG. First, as shown in FIG. 11B, a photosensitive polyimide film 1101 was formed to a thickness of 2.2 μm by spin coating. Thereafter, in order to make the thickness of the photosensitive polyimide film 1101 uniform over the entire surface of the active matrix substrate, the photosensitive polyimide film 1101 was left at normal temperature for 30 minutes (leveling). Then, the active matrix substrate having the photosensitive polyimide film 1101 formed on the upper surface was prebaked at 120 ° C. for 3 minutes.

  Next, the photosensitive polyimide film 1101 is patterned. As shown in FIG. 11C, the photosensitive polyimide film 1101 was covered with a photomask 1102, and ultraviolet light was irradiated from above the active matrix substrate. Thereafter, development processing was performed, the photomask was removed, and post-baking was performed at 280 ° C. for 1 hour. Through the above steps, a columnar gap holding member 1103 is formed. Thereafter, as shown in FIG. 12A, a resist film 1201 is uniformly applied and patterned into a desired shape. In this example, as shown in FIG. 12A, a resist film 1201 was formed on the upper surface of a columnar gap holding member 1103. Next, as shown in FIG. 12B, oxygen plasma is irradiated to process the shape of the gap holding member 1103. Therefore, a gap holding member 1202 having a tapered side surface as shown in FIG. FIG. 12D is an enlarged view of the gap holding member 1202. The shape of the gap holding member 1202 was such that the upper part of a conical shape having a lower surface diameter of 30 μm, an upper surface diameter of 20 μm, and a height of 2.2 μm was flattened.

  FIG. 13 shows a top view of the active matrix substrate of this embodiment. Through the above steps, a patterned cell gap holding material 1202 was formed. As shown in FIG. 13, in this embodiment, a plurality of gap holding members 1202 are formed so as to double surround the pixel region.

  Thereafter, an alignment film is formed on the active matrix substrate and the counter substrate in the same manner as in the first embodiment.

  Next, the surface of the counter substrate on which the alignment film was formed was subjected to rubbing treatment, and a sealant 1301 was applied on the active matrix substrate (FIG. 13). Thereafter, the active matrix substrate and the counter substrate were bonded (not shown).

  Next, a liquid crystal material as a display medium was injected from a liquid crystal injection port. In this embodiment, since the side surface of the gap holding material 1202 has a tapered shape, the resistance generated between the liquid crystal material and the gap holding material 1202 at the time of injecting the liquid crystal material is reduced. Therefore, the liquid crystal material could be injected uniformly over the entire substrate. Thereafter, the liquid crystal material was completely sealed in the cell by sealing the liquid crystal injection port with a sealing material (not shown).

  As in the present embodiment, a more uniform cell thickness can be realized by increasing the number of the gap holding members 1202, particularly by increasing the number of the gap holding members 1202 near the pixel region. When the display characteristics were actually examined using the manufactured cell, no interference fringes were observed on the cell surface. In addition, good display without disclination was obtained.

  (Example 3)

  This embodiment is different from the first embodiment only in the number and arrangement of the cell gap holding members. The rest is the same as in the first or second embodiment, and will not be described.

  As shown in FIG. 14, in this embodiment, the gap holding material 1401 is formed so as to surround the pixel region, and the gap holding material 1402 is formed so as to surround the drive circuit region. The shape of the gap holding members 1401 and 1402 was a column having a diameter of 30 μm and a height of 2.2 μm. .

  Next, the surface of the counter substrate on which the alignment film was formed was subjected to rubbing treatment, and a sealant 1403 was applied on the active matrix substrate (FIG. 14). Thereafter, the active matrix substrate and the counter substrate were bonded (not shown).

  Next, a liquid crystal material as a display medium was injected from a liquid crystal injection port, and the liquid crystal injection port was sealed with a sealing material (not shown) to completely seal the liquid crystal material in the cell.

  When the display characteristics were actually examined using the manufactured cell, no interference fringes were observed on the cell surface. In addition, good display without disclination was obtained.

  (Example 4)

  In the present embodiment, the steps up to the step of forming a plurality of pixel TFTs and a plurality of drive circuit TFTs on the active matrix substrate are the same as those in the first embodiment, and a description thereof will be omitted.

  As shown in FIG. 7C, after the pixel TFT and the driving circuit TFT are integrally formed on the active matrix substrate, the cell gap holding material is formed on the active matrix substrate. Hereinafter, a step of forming the gap holding material in the present embodiment will be described.

  Please refer to FIG. A gap holding material 1503 is formed by a printing method on the active matrix substrate on which the pixel TFT and the driving circuit TFT are formed. In this embodiment, a polyimide resin is used for the gap holding material 1503. As shown in FIG. 15B, the active matrix substrate was covered with a screen 1501, and a polyimide resin was printed to form a gap holding material 1502. In this embodiment, the gap holding material 1502 of 1.1 μm is formed by one printing. Therefore, after printing the polyimide film, the process of baking for a while and further printing with the polyimide film overlaid was repeated to form the gap holding material 1503 having a desired height.

  FIG. 16 shows a top view of the active matrix substrate on which the gap holding material 1503 is formed. In this embodiment, the gap holding material 1503 is an elliptic cylinder having a major axis of 30 μm, a minor axis of 15 μm, and a height of 2.2 μm, and is formed so as to surround the pixel region. Further, in this embodiment, the gap holding material 1503 is arranged so that the resistance generated between the gap holding material 1503 and the liquid crystal material at the time of injecting the liquid crystal material is small. That is, they are arranged such that the flow direction of the liquid crystal material injected from the liquid crystal injection port is parallel to the long axis of the gap holding material (FIG. 16B).

  Next, an alignment film is formed on the active matrix substrate and the counter substrate. As the alignment film, a polyimide vertical alignment film was used. This polyimide vertical alignment film was coated on the active matrix substrate and the counter substrate by any one of spin coating, flexographic printing, and screen printing (not shown). The thickness of the alignment film was 100 nm. Thereafter, baking was performed by sending hot air of 180 ° C. to form an alignment film.

  Next, a sealant 1601 was applied on the outer frame of the active matrix substrate, and the active matrix substrate and the counter substrate were bonded (not shown).

  Next, a liquid crystal material is injected from a liquid crystal material injection port. In this embodiment, the cell gap holding material 1503 has an elliptical columnar shape and is arranged so as to reduce the resistance generated between the liquid crystal material and the gap holding material when the liquid crystal material is injected as described above. . Therefore, the liquid crystal material could be uniformly injected over the entire substrate.

  Thereafter, a sealant (not shown) was applied to the liquid crystal material injection port, and the sealant was cured by irradiating ultraviolet rays to completely seal the liquid crystal material in the cell.

  (Example 5)

  In the first to fourth embodiments, a planar type TFT has been described as an example. However, the present invention is naturally not affected by the structure of the TFT. Therefore, the individual TFTs in the pixel region and the drive circuit region may be inverted staggered TFTs or multi-gate TFTs.

  In the above Examples 1 to 4, polyimide is used for the gap holding material, but a resin such as acrylic, polyamide, or polyimide amide may be used. Further, a thermosetting resin may be used for the gap holding material.

  In the first to fourth embodiments, the case where a liquid crystal material is used as a display medium has been described. However, the gap holding material of the present invention is a mixed layer of a liquid crystal material and a polymer, a so-called polymer dispersion type liquid crystal display. It can also be used for devices. Further, as the display medium of the semiconductor display device of the present invention, any other display medium whose optical characteristics can be modulated in response to an applied voltage may be used. For example, an electroluminescent element may be used as a display medium.

  Although not shown in Examples 1 to 4, when color display is required, a color filter may be provided on the counter substrate side. The color filter is required to have a uniform and flat thickness, and to have excellent heat resistance and chemical resistance.

  In the first to fourth embodiments, the effect of the gap holding member of the present invention has been described for the case where the height of the pixel region is higher than the height of the drive circuit region. However, it is understood by those skilled in the art that the gap holding member of the present invention has the same effect even when the height of the drive circuit region is higher than the height of the pixel region.

It is a sectional view and a plan view of a conventional active matrix type liquid crystal display device. FIG. 9 is a diagram illustrating a manufacturing process of a conventional active matrix liquid crystal display device. FIG. 11 is a cross-sectional view of a conventional active matrix liquid crystal display device. 1 is a sectional view of an active matrix type liquid crystal display device according to the present invention. FIG. 4 is a diagram illustrating a manufacturing process of an active matrix liquid crystal display device according to the present invention. FIG. 4 is a diagram illustrating a manufacturing process of an active matrix liquid crystal display device according to the present invention. FIG. 3 is a diagram illustrating a manufacturing process of an active matrix liquid crystal display device according to the present invention. It is a figure showing the manufacturing process of the gap maintenance material by the present invention. 1A and 1B are a top view and a perspective view of an active matrix liquid crystal display device according to the present invention. 1 is a top view and a sectional view of an active matrix type liquid crystal display device according to the present invention. FIG. 4 is a diagram illustrating a manufacturing process of an active matrix liquid crystal display device according to the present invention. FIG. 2 is a diagram showing a manufacturing process of an active matrix liquid crystal display device according to the present invention and an enlarged view of a gap holding material according to the present invention. 1 is a top view of an active matrix liquid crystal display device according to the present invention. 1 is a top view of an active matrix liquid crystal display device according to the present invention. FIG. 4 is a diagram illustrating a manufacturing process of an active matrix liquid crystal display device according to the present invention. 1A and 1B are a top view and a perspective view of an active matrix liquid crystal display device according to the present invention.

Explanation of reference numerals

101, 110, 401 Substrate 102 TFT active layer 103 Gate electrode 104 Data line 105 Drain electrode 106 Interlayer insulating film 107 Black matrix 108 Pixel electrode 109, 112 Alignment film 111 Counter electrode 803, 1103.1202, 1401, 1503 Gap holding material

Claims (47)

Forming a resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Patterning the resin to form a plurality of gap holding materials,
After forming the plurality of gap holding members, forming a first vertical alignment film on the side of the first substrate on which the plurality of gap holding members are formed,
Forming a second vertical alignment film on the second substrate,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a photosensitive resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
The photosensitive resin is exposed and patterned using a photomask to form a plurality of gap holding materials,
After forming the plurality of gap holding members, forming a first vertical alignment film on the side of the first substrate on which the plurality of gap holding members are formed,
Forming a second vertical alignment film on the second substrate,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Patterning the resin to form a plurality of tapered side gap maintaining material,
After forming the plurality of gap holding members, forming a first vertical alignment film on the side of the first substrate on which the plurality of gap holding members are formed,
Forming a second vertical alignment film on the second substrate,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Patterning the resin to form a plurality of streamlined gap retaining materials,
After forming the plurality of gap holding members, forming a first vertical alignment film on the side of the first substrate on which the plurality of gap holding members are formed,
Forming a second vertical alignment film on the second substrate,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Pattern the resin, to form a plurality of elliptical or polygonal gap holding material,
After forming the plurality of gap holding members, forming a first vertical alignment film on the side of the first substrate on which the plurality of gap holding members are formed,
Forming a second vertical alignment film on the second substrate,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Patterning the resin to form a plurality of gap holding materials,
After forming the plurality of gap holding materials, a first vertical alignment film is formed by flexographic printing on the side of the first substrate on which the plurality of gap holding materials are formed,
Forming a second vertical alignment film on the second substrate by flexographic printing,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Patterning the resin to form a plurality of gap holding materials,
After forming the plurality of gap holding members, a first vertical alignment film is formed on the side of the first substrate on which the plurality of gap holding members are formed by a screen printing method or a spin coating method,
Forming a second vertical alignment film on the second substrate by a screen printing method or a spin coating method,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate over which a plurality of inverted staggered thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Patterning the resin to form a plurality of gap holding materials,
After forming the plurality of gap holding members, forming a first vertical alignment film on the side of the first substrate on which the plurality of gap holding members are formed,
Forming a second vertical alignment film on the second substrate,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a photosensitive resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
The photosensitive resin is exposed and patterned by using a photomask to form a plurality of gap holding members having tapered side surfaces,
After forming the plurality of gap holding members, forming a first vertical alignment film on the side of the first substrate on which the plurality of gap holding members are formed,
Forming a second vertical alignment film on the second substrate,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a photosensitive resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Using a photomask, the photosensitive resin is exposed and patterned to form a plurality of streamline gap holding members,
After forming the plurality of gap holding members, forming a first vertical alignment film on the side of the first substrate on which the plurality of gap holding members are formed,
Forming a second vertical alignment film on the second substrate,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a photosensitive resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
The photosensitive resin is exposed and patterned using a photomask to form a plurality of elliptical or polygonal gap holding materials,
After forming the plurality of gap holding members, forming a first vertical alignment film on the side of the first substrate on which the plurality of gap holding members are formed,
Forming a second vertical alignment film on the second substrate,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a photosensitive resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
The photosensitive resin is exposed and patterned using a photomask to form a plurality of gap holding materials,
After forming the plurality of gap holding materials, a first vertical alignment film is formed by flexographic printing on the side of the first substrate on which the plurality of gap holding materials are formed,
Forming a second vertical alignment film on the second substrate by flexographic printing,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a photosensitive resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
The photosensitive resin is exposed and patterned using a photomask to form a plurality of gap holding materials,
After forming the plurality of gap holding members, a first vertical alignment film is formed on the side of the first substrate on which the plurality of gap holding members are formed by a screen printing method or a spin coating method,
Forming a second vertical alignment film on the second substrate by a screen printing method or a spin coating method,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a photosensitive resin on a first substrate over which a plurality of inverted staggered thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
The photosensitive resin is exposed and patterned using a photomask to form a plurality of gap holding materials,
After forming the plurality of gap holding members, forming a first vertical alignment film on the side of the first substrate on which the plurality of gap holding members are formed,
Forming a second vertical alignment film on the second substrate,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Patterning the resin to form a plurality of tapered side gap maintaining material,
After forming the plurality of gap holding materials, a first vertical alignment film is formed by flexographic printing on the side of the first substrate on which the plurality of gap holding materials are formed,
Forming a second vertical alignment film on the second substrate by flexographic printing,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Patterning the resin to form a plurality of tapered side gap maintaining materials,
After forming the plurality of gap holding members, a first vertical alignment film is formed on the side of the first substrate on which the plurality of gap holding members are formed by a screen printing method or a spin coating method,
Forming a second vertical alignment film on the second substrate by a screen printing method or a spin coating method,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate over which a plurality of inverted staggered thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Patterning the resin to form a plurality of tapered side gap maintaining material,
After forming the plurality of gap holding members, forming a first vertical alignment film on the side of the first substrate on which the plurality of gap holding members are formed,
Forming a second vertical alignment film on the second substrate,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Patterning the resin to form a plurality of streamlined gap retaining materials,
After forming the plurality of gap holding materials, a first vertical alignment film is formed by flexographic printing on the side of the first substrate on which the plurality of gap holding materials are formed,
Forming a second vertical alignment film on the second substrate by flexographic printing,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Patterning the resin to form a plurality of streamlined gap retaining materials,
After forming the plurality of gap holding members, a first vertical alignment film is formed on the side of the first substrate on which the plurality of gap holding members are formed by a screen printing method or a spin coating method,
Forming a second vertical alignment film on the second substrate by a screen printing method or a spin coating method,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate over which a plurality of inverted staggered thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Patterning the resin to form a plurality of streamlined gap retaining materials,
After forming the plurality of gap holding members, forming a first vertical alignment film on the side of the first substrate on which the plurality of gap holding members are formed,
Forming a second vertical alignment film on the second substrate,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Pattern the resin, to form a plurality of elliptical or polygonal gap holding material,
After forming the plurality of gap holding materials, a first vertical alignment film is formed by flexographic printing on the side of the first substrate on which the plurality of gap holding materials are formed,
Forming a second vertical alignment film on the second substrate by flexographic printing,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Pattern the resin, to form a plurality of elliptical or polygonal gap holding material,
After forming the plurality of gap holding members, a first vertical alignment film is formed on the side of the first substrate on which the plurality of gap holding members are formed by a screen printing method or a spin coating method,
Forming a second vertical alignment film on the second substrate by a screen printing method or a spin coating method,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate over which a plurality of inverted staggered thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Pattern the resin, to form a plurality of elliptical or polygonal gap holding material,
After forming the plurality of gap holding members, forming a first vertical alignment film on the side of the first substrate on which the plurality of gap holding members are formed,
Forming a second vertical alignment film on the second substrate,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate over which a plurality of inverted staggered thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Patterning the resin to form a plurality of gap holding materials,
After forming the plurality of gap holding materials, a first vertical alignment film is formed by flexographic printing on the side of the first substrate on which the plurality of gap holding materials are formed,
Forming a second vertical alignment film on the second substrate by flexographic printing,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate over which a plurality of inverted staggered thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Patterning the resin to form a plurality of gap holding materials,
After forming the plurality of gap holding members, a first vertical alignment film is formed on the side of the first substrate on which the plurality of gap holding members are formed by a screen printing method or a spin coating method,
Forming a second vertical alignment film on the second substrate by a screen printing method or a spin coating method,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a photosensitive resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
The photosensitive resin is exposed and patterned by using a photomask to form a plurality of gap holding members having tapered side surfaces,
After forming the plurality of gap holding materials, a first vertical alignment film is formed by flexographic printing on the side of the first substrate on which the plurality of gap holding materials are formed,
Forming a second vertical alignment film on the second substrate by flexographic printing,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a photosensitive resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Using a photomask, the photosensitive resin is exposed and patterned to form a plurality of streamline gap holding members,
After forming the plurality of gap holding materials, a first vertical alignment film is formed by flexographic printing on the side of the first substrate on which the plurality of gap holding materials are formed,
Forming a second vertical alignment film on the second substrate by flexographic printing,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a photosensitive resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
The photosensitive resin is exposed and patterned using a photomask to form a plurality of elliptical or polygonal gap holding materials,
After forming the plurality of gap holding materials, a first vertical alignment film is formed by flexographic printing on the side of the first substrate on which the plurality of gap holding materials are formed,
Forming a second vertical alignment film on the second substrate by flexographic printing,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a photosensitive resin on a first substrate over which a plurality of inverted staggered thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
The photosensitive resin is exposed and patterned using a photomask to form a plurality of gap holding materials,
After forming the plurality of gap holding materials, a first vertical alignment film is formed by flexographic printing on the side of the first substrate on which the plurality of gap holding materials are formed,
Forming a second vertical alignment film on the second substrate by flexographic printing,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate over which a plurality of inverted staggered thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Patterning the resin to form a plurality of tapered side gap maintaining material,
After forming the plurality of gap holding materials, a first vertical alignment film is formed by flexographic printing on the side of the first substrate on which the plurality of gap holding materials are formed,
Forming a second vertical alignment film on the second substrate by flexographic printing,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate over which a plurality of inverted staggered thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Patterning the resin to form a plurality of streamlined gap retaining materials,
After forming the plurality of gap holding materials, a first vertical alignment film is formed by flexographic printing on the side of the first substrate on which the plurality of gap holding materials are formed,
Forming a second vertical alignment film on the second substrate by flexographic printing,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate over which a plurality of inverted staggered thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Pattern the resin, to form a plurality of elliptical or polygonal gap holding material,
After forming the plurality of gap holding materials, a first vertical alignment film is formed by flexographic printing on the side of the first substrate on which the plurality of gap holding materials are formed,
Forming a second vertical alignment film on the second substrate by flexographic printing,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a photosensitive resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
The photosensitive resin is exposed and patterned by using a photomask to form a plurality of gap holding members having tapered side surfaces,
After forming the plurality of gap holding members, a first vertical alignment film is formed on the side of the first substrate on which the plurality of gap holding members are formed by a screen printing method or a spin coating method,
Forming a second vertical alignment film on the second substrate by a screen printing method or a spin coating method,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a photosensitive resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Using a photomask, the photosensitive resin is exposed and patterned to form a plurality of streamline gap holding members,
After forming the plurality of gap holding members, a first vertical alignment film is formed on the side of the first substrate on which the plurality of gap holding members are formed by a screen printing method or a spin coating method,
Forming a second vertical alignment film on the second substrate by a screen printing method or a spin coating method,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a photosensitive resin on a first substrate on which a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
The photosensitive resin is exposed and patterned using a photomask to form a plurality of elliptical or polygonal gap holding materials,
After forming the plurality of gap holding members, a first vertical alignment film is formed on the side of the first substrate on which the plurality of gap holding members are formed by a screen printing method or a spin coating method,
Forming a second vertical alignment film on the second substrate by a screen printing method or a spin coating method,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a photosensitive resin on a first substrate on which a plurality of inverted staggered thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
The photosensitive resin is exposed and patterned using a photomask to form a plurality of gap holding materials,
After forming the plurality of gap holding members, a first vertical alignment film is formed on the side of the first substrate on which the plurality of gap holding members are formed by a screen printing method or a spin coating method,
Forming a second vertical alignment film on the second substrate by a screen printing method or a spin coating method,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate over which a plurality of inverted staggered thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Patterning the resin to form a plurality of tapered side gap maintaining material,
After forming the plurality of gap holding members, a first vertical alignment film is formed on the side of the first substrate on which the plurality of gap holding members are formed by a screen printing method or a spin coating method,
Forming a second vertical alignment film on the second substrate by a screen printing method or a spin coating method,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate over which a plurality of inverted staggered thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Patterning the resin to form a plurality of streamlined gap retaining materials,
After forming the plurality of gap holding members, a first vertical alignment film is formed on the side of the first substrate on which the plurality of gap holding members are formed by a screen printing method or a spin coating method,
Forming a second vertical alignment film on the second substrate by a screen printing method or a spin coating method,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. Forming a resin on a first substrate over which a plurality of inverted staggered thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors are formed;
Pattern the resin, to form a plurality of elliptical or polygonal gap holding material,
After forming the plurality of gap holding members, a first vertical alignment film is formed on the side of the first substrate on which the plurality of gap holding members are formed by a screen printing method or a spin coating method,
Forming a second vertical alignment film on the second substrate by a screen printing method or a spin coating method,
A method for manufacturing a semiconductor display device, comprising: bonding the first substrate and the second substrate such that the first vertical alignment film and the second vertical alignment film face each other. In any one of claims 1 to 39,
The method for manufacturing a semiconductor display device, wherein the first vertical alignment film and the second vertical alignment film are made of polyimide. In any one of claims 1 to 40,
The method according to claim 1, wherein the plurality of pixel electrodes are formed on a polyimide film. In any one of claims 1 to 40,
The plurality of pixel electrodes are formed on a polyimide film,
The polyimide film is formed on the silicon nitride film,
The method for manufacturing a semiconductor display device, wherein the silicon nitride film is formed on the silicon oxide film. In any one of claims 1 to 42,
A method for manufacturing a semiconductor display device, wherein a cell gap is 4 to 6 μm. In any one of claims 1 to 43,
A method for manufacturing a semiconductor display device, wherein the height accuracy of the plurality of gap holding members is ± 0.1 μm. In any one of claims 1 to 44,
A method of manufacturing a semiconductor display device, wherein the accuracy of the positions of the plurality of gap holding members is ± 10 μm. In any one of claims 1 to 45,
A method for manufacturing a semiconductor display device, comprising a mixed layer of a liquid crystal material and a polymer between the first substrate and the second substrate. In any one of claims 1 to 46,
A method for manufacturing a semiconductor display device, comprising a color filter on the second substrate.

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