JP2004235499A5 - - Google Patents

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Publication number
JP2004235499A5
JP2004235499A5 JP2003023324A JP2003023324A JP2004235499A5 JP 2004235499 A5 JP2004235499 A5 JP 2004235499A5 JP 2003023324 A JP2003023324 A JP 2003023324A JP 2003023324 A JP2003023324 A JP 2003023324A JP 2004235499 A5 JP2004235499 A5 JP 2004235499A5
Authority
JP
Japan
Prior art keywords
potential
power supply
transistor
supplied
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003023324A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004235499A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003023324A priority Critical patent/JP2004235499A/ja
Priority claimed from JP2003023324A external-priority patent/JP2004235499A/ja
Priority to US10/768,394 priority patent/US6985023B2/en
Publication of JP2004235499A publication Critical patent/JP2004235499A/ja
Publication of JP2004235499A5 publication Critical patent/JP2004235499A5/ja
Pending legal-status Critical Current

Links

JP2003023324A 2003-01-31 2003-01-31 半導体装置 Pending JP2004235499A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003023324A JP2004235499A (ja) 2003-01-31 2003-01-31 半導体装置
US10/768,394 US6985023B2 (en) 2003-01-31 2004-01-30 Selective switching of a transistor's back gate potential

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003023324A JP2004235499A (ja) 2003-01-31 2003-01-31 半導体装置

Publications (2)

Publication Number Publication Date
JP2004235499A JP2004235499A (ja) 2004-08-19
JP2004235499A5 true JP2004235499A5 (https=) 2005-04-21

Family

ID=32952154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003023324A Pending JP2004235499A (ja) 2003-01-31 2003-01-31 半導体装置

Country Status (2)

Country Link
US (1) US6985023B2 (https=)
JP (1) JP2004235499A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5143483B2 (ja) * 2007-07-03 2013-02-13 ルネサスエレクトロニクス株式会社 昇圧回路、およびその昇圧回路を備える集積回路
US20100321094A1 (en) * 2010-08-29 2010-12-23 Hao Luo Method and circuit implementation for reducing the parameter fluctuations in integrated circuits

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2585450B2 (ja) 1990-04-18 1997-02-26 東芝マイクロエレクトロニクス株式会社 半導体回路装置
JPH07131332A (ja) 1993-11-04 1995-05-19 Pfu Ltd Ｃｍｏｓ回路
JP3379050B2 (ja) 1993-11-15 2003-02-17 富士通株式会社 半導体装置
US5606287A (en) 1994-06-17 1997-02-25 Fujitsu Limited Operational amplifier having stable operations for a wide range of source voltage, and current detector circuit employing a small number of elements
JP3180662B2 (ja) * 1996-03-29 2001-06-25 日本電気株式会社 電源切り替え回路
JP3814385B2 (ja) * 1997-10-14 2006-08-30 株式会社ルネサステクノロジ 半導体集積回路装置
DE69823982D1 (de) * 1998-05-29 2004-06-24 St Microelectronics Srl Monolithisch integrierter Umschalter für elektrisch programmierbare Speicherzellenvorrichtungen
JP2001186007A (ja) * 1999-12-24 2001-07-06 Sharp Corp 金属酸化膜半導体トランジスタ回路およびそれを用いた半導体集積回路

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