JP2004235391A - Apparatus and method for etching and method for manufacturing semiconductor device - Google Patents

Apparatus and method for etching and method for manufacturing semiconductor device Download PDF

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JP2004235391A
JP2004235391A JP2003021566A JP2003021566A JP2004235391A JP 2004235391 A JP2004235391 A JP 2004235391A JP 2003021566 A JP2003021566 A JP 2003021566A JP 2003021566 A JP2003021566 A JP 2003021566A JP 2004235391 A JP2004235391 A JP 2004235391A
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film
etching
chemical solution
ultraviolet light
processed
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JP3795867B2 (en
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Satoshi Kume
聡 久米
Hirotomo Nishimori
浩友 西森
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Semiconductor Leading Edge Technologies Inc
Ushio Denki KK
Ushio Inc
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Semiconductor Leading Edge Technologies Inc
Ushio Denki KK
Ushio Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31645—Deposition of Hafnium oxides, e.g. HfO2

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus and a method for etching which has the high etching ratio of a film to be worked to a substrate film and a high etching rate. <P>SOLUTION: A substrate 11 on which the film to be etched is formed, is fixed to a rotary stage 5. A chemical liquid 9 containing an etchant is supplied from a nozzle 8 onto the substrate 11. A lamp house 2 is lowered by a driver 10 so that an interval between the quartz glass window 3 of the lamp house 2 for housing a lamp 1 for emitting an ultraviolet ray and the substrate 11 becomes about 2-5 mm, and the film to be etched is irradiated with the ultraviolet ray via the chemical liquid 9. The ultraviolet ray is irradiated with energy higher than the bond energy of molecules for forming the film to be etched. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【０００１】
【発明が属する技術分野】
本発明は、半導体製造装置に係り、特にウェットエッチング装置、ウェットエッチング方法および半導体装置の製造方法に関する。
【０００２】
【従来の技術】
近年、先端デバイス向けのゲート絶縁膜として高誘電率膜が用いられている。この高誘電率膜は、成膜後に行われる熱処理（アニール）によって膜の緻密化が促進され、エッチングされにくい物性へと変化する。
従来より、被エッチング膜のエッチング処理には、被エッチング膜と薬液とを接触させて、その薬液中に解離したエッチャントによりエッチングするウェットエッチング、又は、プラズマ中で励起されたラジカル及びイオン種を基板に引き込み、被エッチング膜を強制的にエッチングするドライエッチングが用いられている。
【０００３】
【発明が解決しようとする課題】
しかしながら、アニール後の高誘電率膜のような緻密な薄膜をウェットエッチングする場合、極めてエッチングレートが低いという問題があった。このため、スループットが著しく低下してしまうという問題があった。
また、ウェットエッチングに代えて緻密な薄膜をドライエッチングする場合、ウェットエッチングよりも高いエッチングレートが得られるが、除去すべきでない下地膜まで連続的にエッチングしてしまうという問題があった。すなわち、ドライエッチングでは下地膜に対するエッチング選択比が十分に得られないという問題があった。
従来、このようなエッチング困難性が、高誘電率膜を先端デバイスに適用する際に大きな障害となっていた。
【０００４】
本発明は、上記従来の課題を解決するためになされたもので、被加工膜の下地膜に対するエッチング選択比が高く、高いエッチングレートを有するエッチング装置およびエッチング方法を提供することを目的とする。
【０００５】
【課題を解決する為の手段】
この発明に係るエッチング装置は、基板上の被加工膜をウェットエッチングするエッチング装置であって、
前記被加工膜上に薬液を供給する薬液供給部と、
前記薬液を介して紫外光を前記被加工膜に照射する紫外光照射部と、
を備えたことを特徴とするものである。
【０００６】
この発明に係るエッチング装置において、前記紫外光は、前記被加工膜を形成する分子の結合エネルギーよりも高いエネルギーを有することが好適である。
【０００７】
この発明に係るエッチング装置において、前記紫外光照射部は、前記被加工膜から２ｍｍ〜５ｍｍ離れた位置に配置されることが好適である。
【０００８】
この発明に係るエッチング装置において、前記紫外光照射部は、
前記紫外光を発する光源と、
該光源を収納し、前記被加工膜と対向する面に光透過窓を有する収納部と、を備え、
前記薬液供給部は、前記光透過窓と前記被加工膜との隙間の側方に配置され、該隙間に連続的に前記薬液を供給するノズルを備えることが好適である。
【０００９】
この発明に係るエッチング装置において、前記光透過窓の上に界面活性剤の層が形成されていることが好適である。
【００１０】
この発明に係るエッチング装置において、前記薬液供給部は、前記ノズルに接続された切替バルブと、
前記切替バルブに接続され、前記薬液を供給する配管と、
前記切替バルブに接続され、洗浄用の超純水を供給する配管と、
を更に備えることが好適である。
【００１１】
この発明に係る半導体装置の製造方法は、上記エッチング装置を用いて被加工膜をウェットエッチングする工程を含むことを特徴とするものである。
【００１２】
この発明に係るエッチング方法は、基板上の被加工膜をウェットエッチングする方法であって、
前記被加工膜上に薬液を供給する工程と、
前記薬液を介して前記被加工膜に紫外光を照射する工程と、
を含むことを特徴とするものである。
【００１３】
この発明に係るエッチング方法において、前記薬液を供給する工程と、前記紫外光を照射する工程とを同時に行うことが好適である。
【００１４】
この発明に係るエッチング方法において、前記被加工膜を形成する分子の結合エネルギーよりも高いエネルギーを有する前記紫外光を照射することが好適である。
【００１５】
【発明の実施の形態】
以下、図面を参照して本発明の実施の形態について説明する。図中、同一または相当する部分には同一の符号を付してその説明を簡略化ないし省略することがある。
【００１６】
実施の形態１．
図１は、本発明の実施の形態１によるエッチング装置を説明するための概略断面図である。詳細には、基板上に形成された被エッチング膜をウェットエッチングするエッチング装置を説明するための図である。
【００１７】
図１に示すように、緻密な薄膜である被エッチング膜（被加工膜）が形成された基板１１が、回転ステージ５上に回転自在に保持される。詳細には、回転ステージ５上にはピン４が複数設けられており、基板１１の端部（側縁部）がこれらのピン４により挟み込まれることにより固定されている。なお、基板１１を静電チャックにより保持してもよい。
【００１８】
回転ステージ５の中心には回転軸６が設けられ、この回転軸６を中心に回転ステージ５が回転することにより基板１１も所望の回転速度で回転する。回転ステージ５は、例えば、薬液塗布時に３００〜５００ｒｐｍ程度の回転速度で回転し、乾燥時に２０００〜３０００ｒｐｍ程度の回転速度で回転する。
【００１９】
また、被エッチング膜は、例えば、ＡＬＤ（Ａｔｏｍｉｃ Ｌａｙｅｒ Ｄｅｐｏｓｉｔｉｏｎ）法を用いて成膜した後に、アニール処理（ＰＤＡ：Ｐｏｓｔ Ｄｅｐｏｓｉｔｉｏｎ Ａｎｎｅａｌｉｎｇ）が施されたＨｆＯ２膜やＨｆＡｌＯ膜のような高誘電率膜（Ｈｉｇｈ−ｋ膜）である。
【００２０】
薬液配管７先端に設けられたノズル８から薬液９が、基板１１上の被エッチング膜表面に供給される。薬液配管７は、バルブやポンプを介して薬液を貯留する薬液槽に、又は付帯設備の薬液供給ラインに接続されている（図示省略）。
また、薬液９は、例えば、リン酸系ベースのエッチャントを含有するものを用いることができる。なお、所望の特性を得るため、薬液９に、界面活性剤等を添加してもよい。
【００２１】
基板１１の上方には、薬液９を介して被エッチング膜に紫外光を照射する光源１であるランプを収納したランプハウス２が配置されている。ランプ１としては、例えば、ＫｒＣｌ（波長２２２ｎｍ），Ｘｅ２（１７２ｎｍ），Ｋｒ２（１４７ｎｍ），Ａｒ２（１２６ｎｍ）エキシマランプ等を用いることができる。ここで、ランプ１は、被エッチング膜を形成する分子の結合エネルギーよりも高いエネルギーで紫外光を照射する。紫外光のエネルギーは、紫外光の照射時間により制御可能であり、照射時間は例えば１０ｓｅｃ〜２００ｓｅｃである。
また、ランプ１から発せられた紫外光の波長に対して高い透過率を有するように、薬液９の材料や、被エッチング膜上の厚み等が制御される。
【００２２】
ランプハウス２の下面には、基板１１と同じか、或いはそれ以上のサイズを有する開口が形成されている。この開口は、ランプ１から発せられた紫外光が透過する材質で形成された光透過窓３で覆われている。この光透過窓３は、例えば、石英ガラスで形成された窓（以下「石英ガラス窓」という。）である。
また、石英ガラス窓３により密閉されたランプハウス２の内部は、窒素等の不活性ガスが充填されている。これにより、酸素存在下で吸収される波長を有するランプ１を使用することができる。石英ガラス窓３における紫外光の照度は、例えば、５〜２０ｍＷ／ｃｍ２程度が好適である。
【００２３】
ランプハウス２の上面には、該ランプハウス２を上下方向に駆動する駆動部１０が設けられている。この駆動部１０の駆動により、紫外光を照射する際にはランプハウス２が基板１１近傍に配置され、ランプ１からの紫外光を至近距離にある被エッチング膜に作用させることができる。詳細には、基板１１表面から２ｍｍ〜５ｍｍ程度離れた上方に石英ガラス窓３が位置するように、ランプハウス２が配置される。
【００２４】
次に、上記エッチング装置の動作、すなわち被エッチング膜のウェットエッチングについて説明する。
先ず、被エッチング膜としてＨｆＯ２膜が形成された基板１１を、ピン４により回転ステージ５上に固定する。そして、回転軸６を中心に回転ステージ５を回転させることにより基板１１を３００〜５００ｒｐｍの回転速度で回転させながら、ノズル８から基板１１上にリン酸系ベースのエッチャントを含む薬液９を供給する。その後、薬液９が基板１１上に十分に薄くかつ均一に広がった時点で、回転を止める。このとき、薬液９は基板１１から流れ去ることなく、基板１１全体に所望の厚みで塗布されている。
【００２５】
そして、石英ガラス窓３がピン４に干渉せず、基板１１表面から２ｍｍ〜５ｍｍ程度離れた位置となるように、駆動部１０によりランプハウス２を下降させ、予め点灯させておいたランプ１から薬液９を介してＨｆＯ２膜に紫外光を照射する。このとき、紫外光の光エネルギーがＨｆＯ２膜のＨｆ−Ｏ結合を切断し、予め塗布しておいた薬液９に含まれるエッチャントによりエッチング反応が進行する。
【００２６】
所望のエッチング終了後、ランプ１による紫外光照射を止め、駆動部１０によりランプハウス２を上昇させるとともに、別途水洗ノズルから超純水を基板１１上に吐出させ、基板１１上に残留する薬液９を洗い流す。
その後、回転ステージ５により基板１１を２０００〜３０００ｒｐｍ程度で回転させることにより、基板１１上の超純水を振り切り、乾燥を行う。
【００２７】
以上説明したように、本実施の形態１では、緻密な被エッチング膜上に薬液９を供給した後、該被エッチング膜を形成する分子の結合エネルギーを上回る光エネルギーを有する紫外光を薬液９を介して被エッチング膜に照射した。この紫外光の照射により、被エッチング膜を形成する分子の結合が切断され、薬液９と接触する被エッチング膜のエッチングレートが大幅に増大する。すなわち、被エッチング膜の分子結合が最も切断された状態でウェットエッチングすることにより、エッチングレートを大幅に増大させることができる。従って、エッチング処理時間を短縮することができ、スループットを向上させることができる。また、下地膜に対して高いエッチング選択比を有するため、ドライエッチングを用いる場合のように下地膜を連続してエッチングするような問題も発生しない。これにより、先端デバイスに緻密な高誘電率膜を適用することができる。
【００２８】
また、本実施の形態１で用いられる薬液９は、ランプ１が有する波長に対して高い透過率を有する。このため、ランプ１から発せられた紫外光が薬液９によりほとんど吸収されず、該紫外光は十分な光エネルギーで被エッチング膜に到達することができる。よって、薬液９による紫外光の光エネルギーのロスを極力低減することが可能である。
【００２９】
また、熱交換器やホットプレート等を用いて薬液９や基板１１の温度を上げることにより、エッチングレートを更に向上させることができる。しかし、この場合、薬液９の蒸発量が増加することとなり、ランプハウス２下部の石英ガラス窓３の表面に、結露による曇りが生じてしまう可能性がある。この曇りにより紫外光が散乱してしまい、被エッチング膜への紫外光の作用が不十分となる可能性がある。
この対策として、疎水基を有する界面活性剤等を石英ガラス窓３に塗布することが好適である。この界面活性剤の膜により、石英ガラス窓３の結露を防止することができ、紫外光の光エネルギーのロスを防止することが可能となる（後述する実施の形態２についても同様）。
【００３０】
また、薬液９を１回供給しただけでは、エッチング中に消費される薬液９中のエッチャントの量が不十分で、途中でエッチング反応が止まってしまう場合も考えられる。このようにエッチャントの供給律速になる場合には、駆動部１０によりランプハウス２を一旦基板１１近傍から離して（上昇させて）、再度ノズル８から薬液９を供給した後、ランプハウス２を基板１１近傍に下降させて紫外光照射を再度行うのがよい。
【００３１】
しかし、エッチングのメカニズム上、極めてエッチャントの供給律速になる場合には、薬液供給と紫外光照射とを何回も繰り返す必要があるため、プロセス時間が長くなり、スループットが低下してしまう。また、薬液塗布後に照射される紫外光の光エネルギーが与える熱により薬液９が乾燥してしまい、エッチング後の水洗時に不可逆な状態に変化する場合がある。かかる場合に、有効な手段を後述の実施の形態２として説明する。
【００３２】
なお、本実施の形態１では、被エッチング膜が高誘電率膜である場合について説明したが、これに限らず、ウェットエッチングレートが低い膜に対して本発明を適用することができ、特に緻密な薄膜に対して好適である（後述する実施の形態２についても同様）。
【００３３】
また、本発明者は、本実施の形態１の比較例として、ランプ１から被エッチング膜に紫外光を最初に照射した後、被エッチング膜上に薬液９の塗布を行った。しかし、この比較例では、本実施の形態１と比較してエッチングレートの増大が僅かであり、所望の効果が得られなかった。
【００３４】
実施の形態２．
図２は、本発明の実施の形態２によるエッチング装置を説明するための概略断面図であり、図３は、図２に示したエッチング装置における基板近傍を示す上面図である。
本実施の形態２によるエッチング装置は、上述したように、極めてエッチャントの供給律速になる場合に特に好適である。
【００３５】
図２に示すように、被エッチング膜が形成された基板１１は、該基板１１よりも広い面積を有する板状のステージ１２上に保持される。ステージ１２上には例えば２〜５ｍｍの高さを有するピン４が複数設けられ、基板１１の端部がこれらのピン４により挟み込まれることにより固定されている。
【００３６】
実施の形態１と同様に、ランプ１を収納したランプハウス２は、駆動部１０により上下方向に移動する。紫外光を照射する際には、基板１１表面から２ｍｍ〜５ｍｍ程度離れた上方に石英ガラス窓３が位置するように、ランプハウス２が配置される。
【００３７】
石英ガラス窓３と基板１１との隙間には、該隙間の側方に配置されたスリット状のフラットノズル１３の先端部分が差し込まれ、フラットノズル１３から隙間に薬液９が連続的に供給される。ここで、図３に示すように、ステージ１２上には、フラットノズル１３と直交し、基板１１を挟み込むように一対のガイド１６が形成されている。これにより、フラットノズル１３から基板１１の一端に供給された薬液９は、ガイド１６によりその一端と対向する他端の方向（すなわち、フラットノズル１３の反対方向）に導かれ、徐々にその隙間を満たしていく。さらに、フラットノズル１３から供給された薬液９の過剰分は、フラットノズル１３の反対方向から流れ出る。
【００３８】
また、フラットノズル１３は配管１５の一端に接続されている。配管１５の他端は、切替バルブ１４を介して、薬液用配管１５ａと超純水用配管１５ｂとに接続されている。すなわち、切替バルブ１４の切り替え動作により、フラットノズル１３及び配管１５が、薬液用配管１５ａ又は超純水用配管１５ｂと接続される。
【００３９】
次に、上記エッチング装置の動作、すなわち被エッチング膜のウェットエッチングについて説明する。
先ず、被エッチング膜としてＨｆＯ２膜が形成された基板１１を、ステージ１２上に固定する。
そして、石英ガラス窓３がピン４に干渉せず、基板１１表面から２ｍｍ〜５ｍｍ程度離れた位置となるように、駆動部１０によりランプハウス２を下降させる。
【００４０】
次に、石英ガラス窓３と基板１１との隙間に側方からフラットノズル１３の先端部分を差し込み、フラットノズル１３から連続的に該隙間に薬液９を供給する。この薬液９の供給と同時に、ランプ１から薬液９を介してＨｆＯ２膜に紫外光を照射する。
このとき、紫外光の光エネルギーがＨｆＯ２膜のＨｆ−Ｏ結合を切断し、フラットノズル１３から供給された薬液９に含まれるエッチャントによりエッチング反応が進行する。また、フラットノズル１３から供給された薬液９はガイド１６によりフラットノズル１３の反対側に導かれ上記隙間を徐々に埋めていき、その後上記隙間を満たす。さらに一定流量で薬液９を供給し続けることにより、過剰の薬液９はフラットノズル１３の反対側の基板１１の外に流出する。これにより、被エッチング膜上には、エッチャントリッチな薬液９が供給される。
【００４１】
所望のエッチング終了後、ランプ１による紫外光照射を止める。そして、ランプハウス２の位置はそのままの状態で、切替バルブ１４を切り替えて、フラットノズル１３から上記隙間に超純水を供給して、基板１１上に残留する薬液９を洗い流す。このとき、基板１１上に残存する薬液９を洗い流すだけでなく、石英ガラス窓３のように薬液９と接液した部分の洗浄も同時に行われる。
【００４２】
以上説明したように、本実施の形態２では、フラットノズル１３による薬液９の供給と、ランプ１による紫外光の照射とを同時に行ってウェットエッチングした。従って、実施の形態１と同様の効果が得られる。
さらに、本実施の形態２では、ウェットエッチングの間、すなわちランプ１により紫外光を照射している間に、石英ガラス窓３と基板１１との間の隙間に、フラットノズル１３により薬液９を連続して供給するようにした。これにより、被エッチング膜上に常にエッチャントリッチな薬液９を供給することができる。従って、実施の形態１よりもエッチングレートを更に増大させることができる。よって、上述した極めてエッチャント供給律速のエッチング反応の場合でも、薬液供給と紫外光照射とを繰り返す必要がなく、プロセス時間が長くなりスループットが低下することを防止することができる。また、薬液９が乾燥して水洗時に不可逆な状態に変化することも防止することができる。
また、本実施の形態２では、切替バルブ１４の切替動作により、フラットノズル１３から超純水を供給するようにした。これにより、基板１１の洗浄だけでなく、フラットノズル１３や石英ガラス窓３のような接液部分の洗浄を行うことができる。よって、別途超純水用のノズルを設ける必要がなく、エッチング装置の簡略化およびコスト低減が可能となる。
【００４３】
【発明の効果】
本発明によれば、被加工膜の下地膜に対するエッチング選択比が高く、高いエッチングレートを有するエッチング装置およびエッチング方法を提供することができる。
【図面の簡単な説明】
【図１】本発明の実施の形態１によるエッチング装置を説明するための概略断面図である。
【図２】本発明の実施の形態２によるエッチング装置を説明するための概略断面図である。
【図３】図２に示したエッチング装置における基板近傍を示す上面図である。
【符号の説明】
１ 光源（ランプ）
２ ランプハウス
３ 光透過窓（石英ガラス窓）
４ ピン
５ 回転ステージ
６ 回転軸
７ 薬液配管
８ ノズル
９ 薬液
１０ 駆動部
１１ 基板
１２ ステージ
１３ フラットノズル
１４ 切替バルブ
１５ 配管
１５ａ 薬液用配管
１５ｂ 超純水用配管
１６ ガイド[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a wet etching apparatus, a wet etching method, and a semiconductor device manufacturing method.
[0002]
[Prior art]
In recent years, high dielectric constant films have been used as gate insulating films for advanced devices. In the high dielectric constant film, the heat treatment (annealing) performed after the film formation promotes the densification of the film, and changes to a property that is difficult to be etched.
Conventionally, the etching process of a film to be etched is performed by contacting the film to be etched with a chemical solution and etching by an etchant dissociated in the chemical solution, or by using radicals and ionic species excited in plasma by a substrate. And dry etching for forcibly etching the film to be etched is used.
[0003]
[Problems to be solved by the invention]
However, when a dense thin film such as a high dielectric constant film after annealing is wet-etched, there is a problem that the etching rate is extremely low. For this reason, there is a problem that the throughput is significantly reduced.
Further, in the case where a dense thin film is dry-etched instead of wet etching, an etching rate higher than that of wet etching can be obtained, but there is a problem that a base film which should not be removed is continuously etched. That is, there is a problem that a sufficient etching selectivity with respect to the underlying film cannot be obtained by dry etching.
Conventionally, such difficulty in etching has been a major obstacle when applying a high dielectric constant film to an advanced device.
[0004]
The present invention has been made to solve the above-mentioned conventional problems, and has as its object to provide an etching apparatus and an etching method having a high etching selectivity of a film to be processed with respect to a base film and a high etching rate.
[0005]
[Means for solving the problem]
An etching apparatus according to the present invention is an etching apparatus that wet-etches a film to be processed on a substrate,
A chemical solution supply unit for supplying a chemical solution on the film to be processed,
An ultraviolet light irradiation unit that irradiates the film to be processed with ultraviolet light through the chemical solution,
It is characterized by having.
[0006]
In the etching apparatus according to the present invention, it is preferable that the ultraviolet light has an energy higher than a binding energy of molecules forming the film to be processed.
[0007]
In the etching apparatus according to the present invention, it is preferable that the ultraviolet light irradiation unit is disposed at a position separated from the film to be processed by 2 mm to 5 mm.
[0008]
In the etching apparatus according to the present invention, the ultraviolet light irradiation unit includes:
A light source that emits ultraviolet light,
A storage unit that stores the light source and has a light transmission window on a surface facing the film to be processed,
It is preferable that the chemical solution supply unit includes a nozzle that is disposed on a side of a gap between the light transmission window and the film to be processed and continuously supplies the chemical solution to the gap.
[0009]
In the etching apparatus according to the present invention, it is preferable that a layer of a surfactant is formed on the light transmitting window.
[0010]
In the etching apparatus according to the present invention, the chemical solution supply unit includes a switching valve connected to the nozzle,
A pipe connected to the switching valve and supplying the chemical solution,
A pipe connected to the switching valve and supplying ultrapure water for cleaning,
It is preferable to further include
[0011]
A method for manufacturing a semiconductor device according to the present invention includes a step of wet-etching a film to be processed using the above-described etching apparatus.
[0012]
An etching method according to the present invention is a method for wet etching a film to be processed on a substrate,
Supplying a chemical solution on the film to be processed;
Irradiating the film to be processed with ultraviolet light through the chemical solution,
It is characterized by including.
[0013]
In the etching method according to the present invention, it is preferable that the step of supplying the chemical solution and the step of irradiating the ultraviolet light are performed simultaneously.
[0014]
In the etching method according to the present invention, it is preferable that the ultraviolet light having an energy higher than the binding energy of the molecules forming the film to be processed is irradiated.
[0015]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding parts have the same reference characters allotted, and description thereof may be simplified or omitted.
[0016]
Embodiment 1 FIG.
FIG. 1 is a schematic sectional view for explaining an etching apparatus according to the first embodiment of the present invention. In detail, it is a diagram for explaining an etching apparatus that wet-etches a film to be etched formed on a substrate.
[0017]
As shown in FIG. 1, a substrate 11 on which a dense film to be etched (film to be processed) is formed is rotatably held on a rotary stage 5. More specifically, a plurality of pins 4 are provided on the rotary stage 5, and the ends (side edges) of the substrate 11 are fixed by being pinched by these pins 4. Note that the substrate 11 may be held by an electrostatic chuck.
[0018]
A rotation shaft 6 is provided at the center of the rotation stage 5, and the rotation of the rotation stage 5 about the rotation shaft 6 causes the substrate 11 to rotate at a desired rotation speed. The rotation stage 5 rotates at a rotation speed of about 300 to 500 rpm at the time of applying a chemical solution, and rotates at a rotation speed of about 2000 to 3000 rpm at the time of drying.
[0019]
The film to be etched is, for example, a high dielectric constant film such as an HfO 2 film or an HfAlO film which is formed by using an ALD (Atomic Layer Deposition) method and then subjected to an annealing treatment (PDA: Post Deposition Annealing). (High-k film).
[0020]
A chemical solution 9 is supplied to the surface of a film to be etched on the substrate 11 from a nozzle 8 provided at the tip of the chemical solution pipe 7. The chemical pipe 7 is connected to a chemical tank for storing a chemical via a valve or a pump, or to a chemical supply line of ancillary equipment (not shown).
Further, as the chemical solution 9, for example, a solution containing a phosphoric acid-based etchant can be used. Note that a surfactant or the like may be added to the chemical solution 9 in order to obtain desired characteristics.
[0021]
Above the substrate 11, a lamp house 2 containing a lamp as a light source 1 for irradiating the film to be etched with ultraviolet light via a chemical solution 9 is arranged. As the lamp 1, for example, a KrCl (wavelength: 222 nm), Xe 2 (172 nm), Kr 2 (147 nm), Ar 2 (126 nm) excimer lamp, or the like can be used. Here, the lamp 1 irradiates ultraviolet light with energy higher than the binding energy of the molecules forming the film to be etched. The energy of the ultraviolet light can be controlled by the irradiation time of the ultraviolet light, and the irradiation time is, for example, 10 sec to 200 sec.
Further, the material of the chemical solution 9, the thickness on the film to be etched, and the like are controlled so as to have a high transmittance with respect to the wavelength of the ultraviolet light emitted from the lamp 1.
[0022]
On the lower surface of the lamp house 2, an opening having a size equal to or larger than the substrate 11 is formed. This opening is covered with a light transmission window 3 formed of a material through which ultraviolet light emitted from the lamp 1 is transmitted. The light transmission window 3 is, for example, a window formed of quartz glass (hereinafter, referred to as “quartz glass window”).
The interior of the lamp house 2 closed by the quartz glass window 3 is filled with an inert gas such as nitrogen. Thus, the lamp 1 having a wavelength that can be absorbed in the presence of oxygen can be used. The illuminance of ultraviolet light in the quartz glass window 3 is preferably, for example, about 5 to 20 mW / cm 2 .
[0023]
On the upper surface of the lamp house 2, a driving unit 10 for driving the lamp house 2 in the up-down direction is provided. By driving the driving unit 10, when irradiating the ultraviolet light, the lamp house 2 is disposed near the substrate 11, and the ultraviolet light from the lamp 1 can act on the film to be etched at a short distance. Specifically, the lamp house 2 is arranged such that the quartz glass window 3 is located above the surface of the substrate 11 at a distance of about 2 mm to 5 mm.
[0024]
Next, the operation of the etching apparatus, that is, the wet etching of the film to be etched will be described.
First, the substrate 11 on which the HfO 2 film is formed as a film to be etched is fixed on the rotary stage 5 with the pins 4. Then, a chemical solution 9 containing a phosphoric acid-based etchant is supplied from the nozzle 8 onto the substrate 11 while rotating the substrate 11 at a rotation speed of 300 to 500 rpm by rotating the rotary stage 5 about the rotation axis 6. . Thereafter, when the chemical solution 9 spreads sufficiently thinly and uniformly on the substrate 11, the rotation is stopped. At this time, the chemical solution 9 is applied with a desired thickness to the entire substrate 11 without flowing away from the substrate 11.
[0025]
The driving unit 10 lowers the lamp house 2 so that the quartz glass window 3 does not interfere with the pins 4 and is located at a position about 2 mm to 5 mm away from the surface of the substrate 11. The HfO 2 film is irradiated with ultraviolet light via the chemical solution 9. At this time, the light energy of the ultraviolet light cuts the Hf-O bond of the HfO 2 film, and the etching reaction proceeds by the etchant contained in the chemical solution 9 applied in advance.
[0026]
After completion of the desired etching, the irradiation of the ultraviolet light by the lamp 1 is stopped, the lamp house 2 is raised by the driving unit 10, and ultrapure water is separately discharged from the washing nozzle onto the substrate 11, and the chemical solution 9 remaining on the substrate 11 is removed. Wash off.
Thereafter, the ultrapure water on the substrate 11 is shaken off by rotating the substrate 11 at about 2000 to 3000 rpm by the rotation stage 5, and drying is performed.
[0027]
As described above, in the first embodiment, after supplying the chemical solution 9 onto the dense film to be etched, the chemical solution 9 is irradiated with ultraviolet light having light energy higher than the binding energy of the molecules forming the film to be etched. Irradiated on the film to be etched. By the irradiation of the ultraviolet light, the bonds of the molecules forming the film to be etched are broken, and the etching rate of the film to be etched in contact with the chemical solution 9 is greatly increased. That is, by performing wet etching in a state where the molecular bonds of the film to be etched are most broken, the etching rate can be greatly increased. Therefore, the etching processing time can be reduced, and the throughput can be improved. Further, since the substrate has a high etching selectivity with respect to the base film, there is no problem that the base film is continuously etched as in the case of using dry etching. Thereby, a dense high dielectric constant film can be applied to the advanced device.
[0028]
Further, the chemical solution 9 used in the first embodiment has a high transmittance with respect to the wavelength of the lamp 1. Therefore, the ultraviolet light emitted from the lamp 1 is hardly absorbed by the chemical solution 9, and the ultraviolet light can reach the film to be etched with sufficient light energy. Therefore, it is possible to reduce the loss of the light energy of the ultraviolet light due to the chemical solution 9 as much as possible.
[0029]
Further, by raising the temperature of the chemical solution 9 or the substrate 11 using a heat exchanger, a hot plate or the like, the etching rate can be further improved. However, in this case, the amount of evaporation of the chemical solution 9 increases, and the surface of the quartz glass window 3 below the lamp house 2 may be fogged by condensation. Ultraviolet light is scattered due to the fogging, and the effect of the ultraviolet light on the film to be etched may be insufficient.
As a countermeasure, it is preferable to apply a surfactant having a hydrophobic group to the quartz glass window 3. With this surfactant film, dew condensation on the quartz glass window 3 can be prevented, and loss of ultraviolet light energy can be prevented (the same applies to Embodiment 2 described later).
[0030]
Further, if the chemical solution 9 is supplied only once, the amount of the etchant in the chemical solution 9 consumed during the etching may be insufficient, and the etching reaction may be stopped halfway. When the supply rate of the etchant is controlled as described above, the lamp house 2 is once separated from the vicinity of the substrate 11 (raised) by the driving unit 10 and the chemical solution 9 is supplied again from the nozzle 8. It is preferable that the ultraviolet light irradiation is performed again by lowering to the vicinity of 11.
[0031]
However, when the supply of the etchant is extremely limited due to the etching mechanism, the supply of the chemical solution and the irradiation of the ultraviolet light need to be repeated many times, so that the process time becomes longer and the throughput is reduced. In addition, the chemical solution 9 may be dried by heat given by the light energy of the ultraviolet light irradiated after the application of the chemical solution, and may change to an irreversible state at the time of washing with water after etching. In such a case, effective means will be described as a second embodiment described later.
[0032]
In the first embodiment, the case where the film to be etched is a high dielectric constant film has been described. However, the present invention is not limited to this, and the present invention can be applied to a film having a low wet etching rate. This is suitable for a thin film (the same applies to a second embodiment described later).
[0033]
Further, as a comparative example of the first embodiment, the inventor applied a chemical solution 9 on the film to be etched after first irradiating the film to be etched with ultraviolet light from the lamp 1. However, in this comparative example, the etching rate was slightly increased as compared with the first embodiment, and the desired effect was not obtained.
[0034]
Embodiment 2 FIG.
FIG. 2 is a schematic sectional view for explaining an etching apparatus according to the second embodiment of the present invention, and FIG. 3 is a top view showing the vicinity of the substrate in the etching apparatus shown in FIG.
As described above, the etching apparatus according to the second embodiment is particularly suitable when the supply of the etchant is extremely limited.
[0035]
As shown in FIG. 2, the substrate 11 on which the film to be etched is formed is held on a plate-shaped stage 12 having a larger area than the substrate 11. A plurality of pins 4 having a height of, for example, 2 to 5 mm are provided on the stage 12, and an end of the substrate 11 is fixed by being pinched by these pins 4.
[0036]
As in the first embodiment, the lamp house 2 in which the lamp 1 is stored is moved up and down by the driving unit 10. When irradiating ultraviolet light, the lamp house 2 is arranged such that the quartz glass window 3 is located above the surface of the substrate 11 at a distance of about 2 mm to 5 mm.
[0037]
In the gap between the quartz glass window 3 and the substrate 11, the tip of a slit-shaped flat nozzle 13 disposed on the side of the gap is inserted, and the chemical solution 9 is continuously supplied from the flat nozzle 13 to the gap. . Here, as shown in FIG. 3, a pair of guides 16 are formed on the stage 12 so as to be orthogonal to the flat nozzle 13 and sandwich the substrate 11. As a result, the chemical solution 9 supplied from the flat nozzle 13 to one end of the substrate 11 is guided by the guide 16 in the direction of the other end facing the one end (that is, in the direction opposite to the flat nozzle 13), and the gap is gradually formed. I will satisfy you. Further, the excess of the chemical solution 9 supplied from the flat nozzle 13 flows out from the opposite direction of the flat nozzle 13.
[0038]
The flat nozzle 13 is connected to one end of the pipe 15. The other end of the pipe 15 is connected to the chemical liquid pipe 15a and the ultrapure water pipe 15b via the switching valve 14. That is, the switching operation of the switching valve 14 connects the flat nozzle 13 and the pipe 15 to the chemical liquid pipe 15a or the ultrapure water pipe 15b.
[0039]
Next, the operation of the etching apparatus, that is, the wet etching of the film to be etched will be described.
First, a substrate 11 on which an HfO 2 film is formed as a film to be etched is fixed on a stage 12.
Then, the driving unit 10 lowers the lamp house 2 so that the quartz glass window 3 does not interfere with the pins 4 and is located at a position about 2 mm to 5 mm away from the surface of the substrate 11.
[0040]
Next, the tip of the flat nozzle 13 is inserted into the gap between the quartz glass window 3 and the substrate 11 from the side, and the chemical solution 9 is continuously supplied from the flat nozzle 13 into the gap. The HfO 2 film is irradiated with ultraviolet light from the lamp 1 via the chemical solution 9 simultaneously with the supply of the chemical solution 9.
At this time, the light energy of the ultraviolet light cuts the Hf—O bond of the HfO 2 film, and the etching reaction proceeds by the etchant contained in the chemical solution 9 supplied from the flat nozzle 13. The chemical solution 9 supplied from the flat nozzle 13 is guided by the guide 16 to the opposite side of the flat nozzle 13 and gradually fills the gap, and thereafter fills the gap. By continuing to supply the chemical solution 9 at a constant flow rate, the excess chemical solution 9 flows out of the substrate 11 on the opposite side of the flat nozzle 13. Thus, the etchant-rich chemical solution 9 is supplied onto the film to be etched.
[0041]
After completion of the desired etching, irradiation of the ultraviolet light by the lamp 1 is stopped. Then, while the position of the lamp house 2 is kept as it is, the switching valve 14 is switched, ultrapure water is supplied from the flat nozzle 13 to the gap, and the chemical solution 9 remaining on the substrate 11 is washed away. At this time, not only the chemical solution 9 remaining on the substrate 11 is washed away, but also a portion such as the quartz glass window 3 which is in contact with the chemical solution 9 is simultaneously washed.
[0042]
As described above, in the second embodiment, the wet etching is performed by simultaneously supplying the chemical solution 9 by the flat nozzle 13 and irradiating the ultraviolet light by the lamp 1. Therefore, the same effect as in the first embodiment can be obtained.
Further, in the second embodiment, the chemical solution 9 is continuously supplied by the flat nozzle 13 to the gap between the quartz glass window 3 and the substrate 11 during the wet etching, that is, while the lamp 1 is irradiating the ultraviolet light. And then supply it. Thus, the etchant-rich chemical solution 9 can always be supplied onto the film to be etched. Therefore, the etching rate can be further increased as compared with the first embodiment. Therefore, even in the case of the above-described etching reaction in which the supply of the etchant is extremely limited, it is not necessary to repeat the supply of the chemical solution and the irradiation of the ultraviolet light, and it is possible to prevent the process time from being increased and the throughput from being reduced. In addition, it is possible to prevent the chemical solution 9 from drying and changing to an irreversible state during washing.
In the second embodiment, the ultrapure water is supplied from the flat nozzle 13 by the switching operation of the switching valve 14. Accordingly, not only the cleaning of the substrate 11 but also the cleaning of the liquid contacting parts such as the flat nozzle 13 and the quartz glass window 3 can be performed. Therefore, there is no need to separately provide a nozzle for ultrapure water, and the simplification of the etching apparatus and cost reduction can be achieved.
[0043]
【The invention's effect】
According to the present invention, it is possible to provide an etching apparatus and an etching method having a high etching selectivity of a film to be processed with respect to a base film and having a high etching rate.
[Brief description of the drawings]
FIG. 1 is a schematic sectional view for explaining an etching apparatus according to a first embodiment of the present invention.
FIG. 2 is a schematic sectional view for explaining an etching apparatus according to a second embodiment of the present invention.
FIG. 3 is a top view showing the vicinity of a substrate in the etching apparatus shown in FIG. 2;
[Explanation of symbols]
1 light source (lamp)
2 Lamp house 3 Light transmission window (quartz glass window)
4 Pin 5 Rotation stage 6 Rotation axis 7 Chemical solution pipe 8 Nozzle 9 Chemical solution 10 Drive unit 11 Substrate 12 Stage 13 Flat nozzle 14 Switching valve 15 Pipe 15a Chemical solution pipe 15b Ultrapure water pipe 16 Guide

Claims (10)

基板上の被加工膜をウェットエッチングするエッチング装置であって、
前記被加工膜上に薬液を供給する薬液供給部と、
前記薬液を介して紫外光を前記被加工膜に照射する紫外光照射部と、
を備えたことを特徴とするエッチング装置。An etching apparatus for wet etching a film to be processed on a substrate,
A chemical solution supply unit for supplying a chemical solution on the film to be processed,
An ultraviolet light irradiation unit that irradiates the film to be processed with ultraviolet light through the chemical solution,
An etching apparatus comprising: 請求項１に記載のエッチング装置において、
前記紫外光は、前記被加工膜を形成する分子の結合エネルギーよりも高いエネルギーを有することを特徴とするエッチング装置。The etching apparatus according to claim 1,
The etching apparatus, wherein the ultraviolet light has higher energy than binding energy of molecules forming the film to be processed. 請求項１又は２に記載のエッチング装置において、
前記紫外光照射部は、前記被加工膜から２ｍｍ〜５ｍｍ離れた位置に配置されたことを特徴とするエッチング装置。The etching apparatus according to claim 1 or 2,
The said ultraviolet light irradiation part was arrange | positioned at the position 2 mm-5 mm away from the said to-be-processed film, The etching apparatus characterized by the above-mentioned. 請求項１から３の何れかに記載のエッチング装置において、
前記紫外光照射部は、
前記紫外光を発する光源と、
該光源を収納し、前記被加工膜と対向する面に光透過窓を有する収納部と、を備え、
前記薬液供給部は、前記光透過窓と前記被加工膜との隙間の側方に配置され、該隙間に連続的に前記薬液を供給するノズルを備えたことを特徴とするエッチング装置。The etching apparatus according to any one of claims 1 to 3,
The ultraviolet light irradiation unit,
A light source that emits ultraviolet light,
A storage unit that stores the light source and has a light transmission window on a surface facing the film to be processed,
The etching apparatus, characterized in that the chemical solution supply unit is provided at a side of a gap between the light transmission window and the film to be processed, and has a nozzle for continuously supplying the chemical solution to the gap. 請求項４に記載のエッチング装置において、
前記光透過窓の上に界面活性剤の層が形成されていることを特徴とするエッチング装置。The etching apparatus according to claim 4,
An etching apparatus, wherein a layer of a surfactant is formed on the light transmitting window. 請求項４又は５に記載のエッチング装置において、
前記薬液供給部は、前記ノズルに接続された切替バルブと、
前記切替バルブに接続され、前記薬液を供給する配管と、
前記切替バルブに接続され、洗浄用の超純水を供給する配管と、
を更に備えたことを特徴とするエッチング装置。The etching apparatus according to claim 4, wherein
A switching valve connected to the nozzle,
A pipe connected to the switching valve and supplying the chemical solution,
A pipe connected to the switching valve and supplying ultrapure water for cleaning,
An etching apparatus further comprising: 請求項１から６の何れかに記載のエッチング装置を用いて被加工膜をウェットエッチングする工程を含むことを特徴とする半導体装置の製造方法。A method for manufacturing a semiconductor device, comprising a step of wet-etching a film to be processed by using the etching apparatus according to claim 1. 基板上の被加工膜をウェットエッチングする方法であって、
前記被加工膜上に薬液を供給する工程と、
前記薬液を介して前記被加工膜に紫外光を照射する工程と、
を含むことを特徴とするエッチング方法。A method for wet etching a film to be processed on a substrate,
Supplying a chemical solution on the film to be processed;
Irradiating the film to be processed with ultraviolet light through the chemical solution,
An etching method comprising: 請求項８に記載のエッチング方法において、
前記薬液を供給する工程と、前記紫外光を照射する工程とを同時に行うことを特徴とするエッチング方法。The etching method according to claim 8,
An etching method, wherein the step of supplying the chemical solution and the step of irradiating the ultraviolet light are performed simultaneously. 請求項８又は９に記載のエッチング方法において、
前記被加工膜を形成する分子の結合エネルギーよりも高いエネルギーを有する前記紫外光を照射することを特徴とするエッチング方法。The etching method according to claim 8 or 9,
An etching method comprising irradiating the ultraviolet light having an energy higher than a binding energy of molecules forming the film to be processed.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011121857A1 (en) * 2010-03-31 2011-10-06 株式会社カネカ Structure, chip for localized surface plasmon resonance sensor, localized surface plasmon resonance sensor, and manufacturing methods therefor
JP2012195325A (en) * 2011-03-14 2012-10-11 Fujitsu Ltd Etching method, method of manufacturing semiconductor device, and etching device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3776092B2 (en) * 2003-03-25 2006-05-17 株式会社ルネサステクノロジ Etching apparatus, etching method, and manufacturing method of semiconductor device
TWI306625B (en) * 2004-02-11 2009-02-21 Sez Ag Method for selective etching
JP2005268380A (en) * 2004-03-17 2005-09-29 Renesas Technology Corp Wet etching apparatus, and wet etching method
TWI385720B (en) * 2004-03-24 2013-02-11 Tosoh Corp Etching composition and etching treatment method
JP5424848B2 (en) * 2009-12-15 2014-02-26 株式会社東芝 Semiconductor substrate surface treatment apparatus and method
US10486204B2 (en) * 2014-11-06 2019-11-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor apparatus and method of removing photoresist layer on substrate

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03203235A (en) * 1989-12-28 1991-09-04 Sharp Corp Etching method
JPH07106229A (en) * 1993-10-05 1995-04-21 Hitachi Ltd Photolithography and its device
JPH0817815A (en) * 1994-06-30 1996-01-19 Toshiba Corp Method for manufacturing semiconductor device and methods for treating, analyzing, and manufacturing semiconductor substrate
JP2001068451A (en) * 1999-08-27 2001-03-16 Tokai Univ Etching method
JP2001068448A (en) * 1999-08-27 2001-03-16 Tokai Univ Etching method
JP2001077078A (en) * 1999-07-28 2001-03-23 Motorola Inc Etching method of oxide and/or insulator

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6127279A (en) * 1994-09-26 2000-10-03 Semiconductor Energy Laboratory Co., Ltd. Solution applying method
JP3182107B2 (en) * 1996-12-13 2001-07-03 松下電工株式会社 Functional coatings, their production methods and applications
JPH10189527A (en) * 1996-12-20 1998-07-21 Fujitsu Ltd Method and apparatus for manufacturing method of semiconductor device
US6009888A (en) * 1998-05-07 2000-01-04 Chartered Semiconductor Manufacturing Company, Ltd. Photoresist and polymer removal by UV laser aqueous oxidant
US20010001392A1 (en) * 1998-11-12 2001-05-24 Dainippon Screen Mfg. Co., Ltd. Substrate treating method and apparatus
US20030192577A1 (en) * 2002-04-11 2003-10-16 Applied Materials, Inc. Method and apparatus for wafer cleaning
JP2003337432A (en) * 2002-05-20 2003-11-28 Tsukuba Semi Technology:Kk Method for removing resist using functional water and apparatus therefor
CN1314084C (en) * 2003-02-20 2007-05-02 松下电器产业株式会社 Etching method, etching apparatus, and method for manufacturing semiconductor device
JP3776092B2 (en) * 2003-03-25 2006-05-17 株式会社ルネサステクノロジ Etching apparatus, etching method, and manufacturing method of semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03203235A (en) * 1989-12-28 1991-09-04 Sharp Corp Etching method
JPH07106229A (en) * 1993-10-05 1995-04-21 Hitachi Ltd Photolithography and its device
JPH0817815A (en) * 1994-06-30 1996-01-19 Toshiba Corp Method for manufacturing semiconductor device and methods for treating, analyzing, and manufacturing semiconductor substrate
JP2001077078A (en) * 1999-07-28 2001-03-23 Motorola Inc Etching method of oxide and/or insulator
JP2001068451A (en) * 1999-08-27 2001-03-16 Tokai Univ Etching method
JP2001068448A (en) * 1999-08-27 2001-03-16 Tokai Univ Etching method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011121857A1 (en) * 2010-03-31 2011-10-06 株式会社カネカ Structure, chip for localized surface plasmon resonance sensor, localized surface plasmon resonance sensor, and manufacturing methods therefor
JP5657645B2 (en) * 2010-03-31 2015-01-21 株式会社カネカ Structure, localized surface plasmon resonance sensor chip, localized surface plasmon resonance sensor, and methods of manufacturing the same
JP2012195325A (en) * 2011-03-14 2012-10-11 Fujitsu Ltd Etching method, method of manufacturing semiconductor device, and etching device

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