JP2004221619A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting device Download PDFInfo
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- JP2004221619A JP2004221619A JP2004136309A JP2004136309A JP2004221619A JP 2004221619 A JP2004221619 A JP 2004221619A JP 2004136309 A JP2004136309 A JP 2004136309A JP 2004136309 A JP2004136309 A JP 2004136309A JP 2004221619 A JP2004221619 A JP 2004221619A
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- light emitting
- semiconductor light
- resin sealing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
Abstract
Description
本発明は、レンズ型の樹脂封止体を備えた半導体発光装置に係り、詳細には発光素子から発光された光を波長変換してレンズ外部に放射する半導体発光装置に関する。 The present invention relates to a semiconductor light emitting device provided with a lens-type resin sealing body, and more particularly, to a semiconductor light emitting device that converts the wavelength of light emitted from a light emitting element and emits the light to the outside of the lens.
図６に示す従来の半導体発光装置は、一端に皿状の支持体（ヘッダ）（１）を備えた第１のリード（２）と、一端にリード細線接続部（メタルポスト）（３）を備えた第２のリード（４）と、ヘッダ（１）に接着剤によって固着された半導体発光素子（５）と、半導体発光素子（５）の上面に形成された２つの電極（図示せず）とメタルポスト（３）等との間を電気的に接続する２本のリード細線（６）と、半導体発光素子（５）、リード細線（６）、第１のリード（２）及び第２のリード（４）の一端側を被覆する樹脂封止体（７）とを有する。
この半導体発光装置の発光色は、半導体発光素子（５）の固有の発光波長によって決定され、例えば、ＧａＡｌＰ系、ＧａＰ系及びＧａＮ系の半導体発光素子を半導体発光素子（５）に使用すれば発光色は、それぞれ赤色、緑色及び青色となる。また、ＧａＡｓ系の半導体発光素子を使用すれば赤外発光の半導体発光装置が得られる。
The conventional semiconductor light emitting device shown in FIG. 6 includes a first lead (2) having a dish-shaped support (header) (1) at one end, and a fine lead wire connecting portion (metal post) (3) at one end. A second lead (4) provided, a semiconductor light emitting element (5) fixed to the header (1) with an adhesive, and two electrodes (not shown) formed on the upper surface of the semiconductor light emitting element (5). Two lead wires (6) for electrically connecting between the semiconductor device and the metal post (3), the semiconductor light emitting element (5), the lead wires (6), the first lead (2), and the second lead wire. A resin sealing body (7) covering one end of the lead (4).
The emission color of this semiconductor light emitting device is determined by the intrinsic emission wavelength of the semiconductor light emitting element (5). The colors are red, green and blue, respectively. If a GaAs-based semiconductor light-emitting element is used, a semiconductor light-emitting device that emits infrared light can be obtained.
ところで、近年では赤、緑、青の中間色又は白色等の混合色の発光が可能な半導体発光装置の実現が望まれている。中間色又は混合色を実現するため、半導体発光素子の発光により励起されて蛍光を発する蛍光体を樹脂封止体（７）中に添加し、半導体発光素子（５）の光を波長変換して樹脂封止体（７）の外部に放射する半導体発光装置が提案されている。蛍光体を樹脂封止体（７）中に混合する半導体発光装置は、光の波長変換によって所望の発光色を得られる反面、蛍光体による光散乱によって発光輝度が著しく低下する欠点があった。
そこで、本発明では、高輝度で所望の発光色が得られる半導体発光装置を提供することを目的とする。
By the way, in recent years, it has been desired to realize a semiconductor light emitting device capable of emitting light of an intermediate color of red, green, and blue, or a mixed color of white and the like. In order to realize an intermediate color or a mixed color, a phosphor which emits fluorescence when excited by light emission of the semiconductor light emitting element is added to the resin sealing body (7), and the wavelength of the light of the semiconductor light emitting element (5) is converted into a resin. A semiconductor light emitting device that emits light to the outside of the sealing body (7) has been proposed. The semiconductor light emitting device in which the phosphor is mixed in the resin sealing body (7) can obtain a desired emission color by wavelength conversion of light, but has a disadvantage that light emission luminance is remarkably reduced due to light scattering by the phosphor.
Therefore, an object of the present invention is to provide a semiconductor light emitting device that can obtain a desired emission color with high luminance.
本発明による半導体発光装置は、複数のリード（２）（４）と、複数のリード（２）（４）間に電気的に接続された半導体発光素子（５）と、複数のリード（２）（４）の一端及び半導体発光素子（５）を封止する蛍光体を含まない樹脂封止体（７）と、蛍光体を含む透光性の蛍光カバー（９）とを備えている。蛍光カバー（９）は、肉薄なフィルム状に形成された樹脂からなり且つ樹脂封止体（７）に密着する弾力性を有する。半導体発光素子（５）から照射した光により蛍光カバー（９）内に配合された蛍光体を励起し、半導体発光素子（５）から生ずる光とは異なる波長の光を蛍光カバー（９）の外部に取り出す。 The semiconductor light emitting device according to the present invention includes a plurality of leads (2) and (4), a semiconductor light emitting element (5) electrically connected between the plurality of leads (2) and (4), and a plurality of leads (2). There is provided a resin sealing body (7) that does not contain a phosphor and seals one end of (4) and the semiconductor light emitting element (5), and a translucent fluorescent cover (9) containing the phosphor. The fluorescent cover (9) is made of a resin formed in a thin film shape and has elasticity to be in close contact with the resin sealing body (7). The light emitted from the semiconductor light emitting element (5) excites the phosphor contained in the fluorescent cover (9), and emits light having a different wavelength from the light generated from the semiconductor light emitting element (5) outside the fluorescent cover (9). To take out.
本発明の半導体発光装置によれば、半導体発光素子（５）から照射した光により蛍光カバー（９）中の蛍光体を励起するので、市販の半導体発光素子から生ずる光とは異なる波長の光を取り出すことができる。また、樹脂封止体（７）には蛍光体が添加されないので、樹脂封止体（７）内での光散乱が生じない。また、蛍光カバー（９）は、肉薄なフィルム状に形成されるため、蛍光カバー（９）内での光散乱は比較的小さい。更に、肉薄なフィルム状に形成された樹脂からなり且つ弾力性を有する蛍光カバー（９）は、樹脂封止体（７）に密着する。この結果、所望の発光色を有する高輝度の半導体発光装置が得られる。 According to the semiconductor light emitting device of the present invention, since the phosphor in the fluorescent cover (9) is excited by the light irradiated from the semiconductor light emitting element (5), light having a different wavelength from the light generated from the commercially available semiconductor light emitting element is emitted. Can be taken out. Further, since no fluorescent substance is added to the resin sealing body (7), light scattering in the resin sealing body (7) does not occur. Further, since the fluorescent cover (9) is formed in a thin film shape, light scattering in the fluorescent cover (9) is relatively small. Further, the fluorescent cover (9) made of a resin formed in a thin film and having elasticity adheres tightly to the resin sealing body (7). As a result, a high-luminance semiconductor light-emitting device having a desired emission color can be obtained.
本発明の実施の形態では、蛍光カバー（９）は、樹脂封止体（７）と同一の形状の内面を有し、樹脂封止体（７）に被着される。樹脂封止体(7)は、円柱状の封止部（７ａ）と、封止部（７ａ）の一端側にこれと一体に形成されたほぼ半球状のレンズ部（７ｂ）とを備え、蛍光カバー（９）は、円筒状のカバー本体（９ａ）と、カバー本体（９ａ）に一体に半球状に形成された球面部（９ｂ）とを備え、カバー本体（９ａ）は樹脂封止体（７）の封止部（７ａ）に合致する形状を有し、球面部（９ｂ）は樹脂封止体（７）のレンズ部（７ｂ）に合致する形状を有する。 In the embodiment of the present invention, the fluorescent cover (9) has an inner surface of the same shape as the resin sealing body (7), and is attached to the resin sealing body (7). The resin sealing body (7) includes a cylindrical sealing part (7a), and a substantially hemispherical lens part (7b) integrally formed with one end of the sealing part (7a), The fluorescent cover (9) includes a cylindrical cover main body (9a) and a spherical portion (9b) integrally formed with the cover main body (9a) in a hemispherical shape, and the cover main body (9a) is a resin sealing body. It has a shape matching the sealing part (7a) of (7), and the spherical part (9b) has a shape matching the lens part (7b) of the resin sealing body (7).
カバー本体（９ａ）及び球面部（９ｂ）は蛍光カバー（９）の弾力性によりそれぞれ樹脂封止体（７）の封止部（７ａ）及びレンズ部（７ｂ）に密着する。蛍光カバー（９）は蛍光体による光散乱が減少する厚さで十分に肉薄なフィルム状に形成される。樹脂封止体（７）と蛍光カバー（９）との間に接着剤が充填される。 The cover body (9a) and the spherical portion (9b) adhere to the sealing portion (7a) and the lens portion (7b) of the resin sealing body (7), respectively, due to the elasticity of the fluorescent cover (9). The fluorescent cover (9) is formed in a sufficiently thin film with a thickness that reduces light scattering by the phosphor. An adhesive is filled between the resin sealing body (7) and the fluorescent cover (9).
本発明では、半導体発光素子から照射した光により蛍光カバー中の蛍光体を励起するので、市販の半導体発光素子から生ずる光とは異なる波長の光を取り出すことができる。また、樹脂封止体には蛍光体が添加されないので、樹脂封止体内での光散乱が生じない。また、蛍光カバーは、肉薄なフィルム状に形成されるため、蛍光カバー内での光散乱は比較的小さい。更に、肉薄なフィルム状に形成された樹脂からなり且つ弾力性を有する蛍光カバーは、樹脂封止体に密着し、蛍光カバーと樹脂封止体との間に空気層が形成されて光散乱が生じることもない。この結果、所望の発光色を有する高輝度の半導体発光装置が得られる。このため、ヘッダ及び樹脂封止体のレンズ部の形状等によって所望の光指向性が得られ、波長変換に伴う輝度の低下を最小限に抑制することができる。蛍光カバーを装着し又は交換することにより容易に異なる波長の光を取り出すことができる。市販の半導体発光素子に蛍光カバーを被着できるので、半導体発光装置を安価に製造することができる。 In the present invention, since the phosphor in the fluorescent cover is excited by the light irradiated from the semiconductor light emitting element, light having a different wavelength from the light generated from the commercially available semiconductor light emitting element can be extracted. Further, since no phosphor is added to the resin sealing body, light scattering in the resin sealing body does not occur. Further, since the fluorescent cover is formed in a thin film shape, light scattering within the fluorescent cover is relatively small. Furthermore, the fluorescent cover made of resin formed into a thin film and having elasticity adheres tightly to the resin sealing body, and an air layer is formed between the fluorescent cover and the resin sealing body to reduce light scattering. It does not occur. As a result, a high-luminance semiconductor light-emitting device having a desired emission color can be obtained. For this reason, desired light directivity can be obtained depending on the shape of the lens portion of the header and the resin sealing body, and a decrease in luminance due to wavelength conversion can be suppressed to a minimum. By attaching or replacing the fluorescent cover, light of different wavelengths can be easily extracted. Since a fluorescent cover can be attached to a commercially available semiconductor light emitting element, a semiconductor light emitting device can be manufactured at low cost.
以下、発光ダイオードに適用した本発明による半導体発光装置の実施の形態を図１〜図４について説明する。図１〜図４では、図６に示す部分と同一の箇所には同一の符号を付し、説明を省略する。
図１に示すように、本実施の形態による半導体発光装置は、レンズ形の樹脂封止体（７）を備えたＬＥＤ（半導体発光ダイオード）（８）と、樹脂封止体（７）を包囲する蛍光カバー（９）とを備えている。周知のトランスファモールド法又はキャスティング法によって形成される樹脂封止体（７）は、円柱状の封止部（７ａ）と、封止部（７ａ）の一端側にこれと一体に形成されたほぼ半球状のレンズ部（７ｂ）とを有する。樹脂封止体（７）は光透過性を有する例えばエポキシ系樹脂等を主成分とし、これにシリカ等から成る散乱剤が混入され、若干の非発光物質の顔料が添加される場合もある。図２に示すＬＥＤ（８）は、図５に示す従来の半導体発光装置と基本的に同一の構造を備えているが、樹脂封止体（７）には蛍光体は添加されない。図２に示すＬＥＤ（８）の半導体発光素子（５）には、４３０〜４８０ｎｍ付近に発光ピークを有する青色系発光色を生ずるＧａＮ系の半導体発光素子が使用される。蛍光カバー（９）は、例えば樹脂基材中に半導体発光素子（５）の発光によって励起されて蛍光を発する蛍光体が添加されている。樹脂基材は透光性のポリエステル樹脂、アクリル樹脂、ウレタン、ナイロン、シリコーン樹脂、塩化ビニル、ポリスチロール、ベークライト、ＣＲ３９（アクリル・グリコール・カーボネート樹脂）等から選択される。ウレタン、ナイロン、シリコーン樹脂は蛍光カバー（９）にある程度の弾力性を付与するため、樹脂封止体（７）への装着が容易である。蛍光体は、光線が照射されたときに、その光線を吸収しながら、その光線の波長とは異なる波長の可視光線を発射する物質をいう。一般に蛍光体は、基体、付活体及び融剤よりなる。基体には、亜鉛、カドミウム、マグネシウム、シリコン、イットリウム等の稀土類元素等の酸化物、硫化物、珪酸塩、バナジン酸塩等が適し、銅、鉄、ニッケルのそれ等は不適である。付活体は銀、銅、マンガン、クロム、ユウロビウム、亜鉛、アルミニウム、鉛、リン、砒素、金等で一般に０.００１％〜数％程度の微量が用いられる。融剤は普通塩化ナトリウム、塩化カリウム、炭酸マグネシウム、塩化バリウムが使用される。前記無機蛍光体の外、フルオレセイン、エオシン、油類（鉱物油）等の有機蛍光体を使用できる。
Hereinafter, an embodiment of a semiconductor light emitting device according to the present invention applied to a light emitting diode will be described with reference to FIGS. 1 to 4, the same portions as those shown in FIG. 6 are denoted by the same reference numerals, and description thereof will be omitted.
As shown in FIG. 1, the semiconductor light emitting device according to the present embodiment surrounds an LED (semiconductor light emitting diode) (8) including a lens-shaped resin sealing body (7) and a resin sealing body (7). Fluorescent cover (9). A resin sealing body (7) formed by a well-known transfer molding method or a casting method has a cylindrical sealing portion (7a) and an almost integrally formed one end portion of the sealing portion (7a). And a hemispherical lens portion (7b). The resin sealing body (7) is mainly composed of, for example, an epoxy resin having a light transmitting property, and a scattering agent made of silica or the like is mixed therein, and a slight amount of a non-light emitting pigment may be added. The LED (8) shown in FIG. 2 has basically the same structure as the conventional semiconductor light emitting device shown in FIG. 5, but no phosphor is added to the resin sealing body (7). As the semiconductor light-emitting element (5) of the LED (8) shown in FIG. 2, a GaN-based semiconductor light-emitting element that emits blue light having a light emission peak near 430 to 480 nm is used. The fluorescent cover (9) has, for example, a fluorescent material that emits fluorescence when excited by light emission of the semiconductor light emitting element (5) added to a resin base material. The resin base material is selected from translucent polyester resin, acrylic resin, urethane, nylon, silicone resin, vinyl chloride, polystyrene, bakelite, CR39 (acrylic glycol carbonate resin), and the like. Urethane, nylon, and silicone resin impart some elasticity to the fluorescent cover (9), so that it can be easily mounted on the resin sealing body (7). Phosphor refers to a substance that, when irradiated with light, absorbs the light and emits visible light having a wavelength different from the wavelength of the light. In general, a phosphor comprises a substrate, an activator and a flux. Oxides of rare earth elements such as zinc, cadmium, magnesium, silicon and yttrium, sulfides, silicates, vanadates and the like are suitable for the substrate, and those of copper, iron and nickel are unsuitable. The activator is silver, copper, manganese, chromium, eurobium, zinc, aluminum, lead, phosphorus, arsenic, gold, or the like, and a small amount of about 0.001% to several% is generally used. As a flux, sodium chloride, potassium chloride, magnesium carbonate and barium chloride are usually used. In addition to the inorganic phosphors, organic phosphors such as fluorescein, eosin, and oils (mineral oil) can be used.
図３に示すように、蛍光カバー（９）は、円筒状のカバー本体（９ａ）と、カバー本体（９ａ）に一体に半球状に形成された球面部（９ｂ）とを備えている。円筒状カバー本体（９ａ）は樹脂封止体（７）の封止部（７ａ）に合致する形状を備え、球面部（９ｂ）は樹脂封止体（７）のレンズ部（７ｂ）に合致する形状を有する。蛍光カバー（９）の内面（９ｄ）は樹脂封止体（７）と同一の形状を有し、カバー本体（９ａ）の一端に設けられた開口部（９ｃ）を通じて、蛍光カバー（９）を樹脂封止体（７）に装着すると、蛍光カバー（９）の内面（９ｄ）は樹脂封止体（７）の外面に密着する。即ち、蛍光カバー（９）のカバー本体（９ａ）と球面部（９ｂ）はそれぞれ樹脂封止体（７）の封止部（７ａ）とレンズ部（７ｂ）に密着して装着されるので、装着後に振動等の外力が蛍光カバー（９）に加えられても蛍光カバー（９）は樹脂封止体（７）から容易には離脱しない。 As shown in FIG. 3, the fluorescent cover (9) includes a cylindrical cover body (9a) and a spherical portion (9b) integrally formed with the cover body (9a) in a hemispherical shape. The cylindrical cover body (9a) has a shape matching the sealing part (7a) of the resin sealing body (7), and the spherical part (9b) matches the lens part (7b) of the resin sealing body (7). It has the shape to do. The inner surface (9d) of the fluorescent cover (9) has the same shape as the resin sealing body (7), and the fluorescent cover (9) is opened through an opening (9c) provided at one end of the cover body (9a). When attached to the resin sealing body (7), the inner surface (9d) of the fluorescent cover (9) comes into close contact with the outer surface of the resin sealing body (7). That is, since the cover body (9a) and the spherical portion (9b) of the fluorescent cover (9) are attached in close contact with the sealing portion (7a) and the lens portion (7b) of the resin sealing body (7), respectively. Even if an external force such as vibration is applied to the fluorescent cover (9) after mounting, the fluorescent cover (9) does not easily come off from the resin sealing body (7).
本実施例では、４３０〜４８０ｎｍ付近の波長によって励起され、５００〜６００ｎｍ付近に発光ピークを有する発光波長が得られ且つ例えば基体が硫化亜鉛及び硫化カドミウム、付活体が銅、融剤が塩化バリウム及び塩化カリウムから成る蛍光体を添加する。 In this embodiment, the light is excited by a wavelength around 430 to 480 nm, an emission wavelength having an emission peak around 500 to 600 nm is obtained, and for example, the base is zinc sulfide and cadmium sulfide, the activator is copper, the flux is barium chloride and A phosphor consisting of potassium chloride is added.
図１に示す本発明の半導体発光装置では、４３０〜４８０ｎｍ付近に発光ピークを有する青色発光のＧａＮ系半導体発光素子を半導体発光素子（５）に使用して、半導体発光素子（５）から発光した光を樹脂封止体（７）を介して蛍光カバー（９）中の蛍光体に照射して、蛍光体を励起する。このため、蛍光カバー（９）中の蛍光体によって５００〜６００ｎｍ付近に発光ピークを有する白色光に波長変換されて蛍光カバー（９）の外部に取り出すことができる。この場合に、蛍光体は蛍光カバー（９）に添加され、樹脂封止体（７）中には添加されないので、樹脂封止体（７）内では蛍光体による光散乱が生じない。また、十分に肉薄なフィルム状の蛍光カバー（９）内では蛍光体による光散乱は比較的小さい。このため、ヘッダ（１）及び樹脂封止体（７）のレンズ部（７ｂ）の形状等によって所望の光指向性が得られ、波長変換に伴う輝度の低下を最小限に抑制することができる。 In the semiconductor light emitting device of the present invention shown in FIG. 1, a blue light emitting GaN-based semiconductor light emitting device having an emission peak around 430 to 480 nm is used as the semiconductor light emitting device (5), and light is emitted from the semiconductor light emitting device (5). Light is applied to the phosphor in the fluorescent cover (9) via the resin sealing body (7) to excite the phosphor. Therefore, the wavelength in the fluorescent cover (9) can be converted into white light having an emission peak near 500 to 600 nm by the phosphor in the fluorescent cover (9), and can be taken out of the fluorescent cover (9). In this case, since the phosphor is added to the fluorescent cover (9) and is not added to the resin sealing body (7), light scattering by the phosphor does not occur in the resin sealing body (7). Further, in the sufficiently thin film-like fluorescent cover (9), light scattering by the fluorescent material is relatively small. For this reason, desired light directivity can be obtained by the shape of the lens portion (7b) of the header (1) and the resin sealing body (7), and a decrease in luminance due to wavelength conversion can be suppressed to a minimum. .
本実施例の半導体発光装置は、蛍光体を含む樹脂の射出成形により所定の形状に形成した蛍光カバー（９）を樹脂封止体（７）に被着することにより簡単に完成できる。即ち、半導体発光装置の樹脂封止体（７）に対し、蛍光カバー（９）を交換可能に被着できる。特に、蛍光カバー（９）は弾力性を有するため、市販の半導体発光装置の樹脂封止体（７）に容易に被着することができる。また、蛍光カバー（９）は弾力を有すると同時に樹脂封止体（７）と同一の形状の内面を有するので、樹脂封止体（７）の表面に密着して樹脂封止体（７）と蛍光カバー（９）との間での空気層の形成を防止できる。更に、蛍光カバー（９）の弾力性により、樹脂封止体（７）に被着した後、振動等の外力が蛍光カバー（９）に加えられても蛍光カバー（９）は樹脂封止体（７）から容易には離脱しない。 The semiconductor light emitting device of this embodiment can be easily completed by attaching a fluorescent cover (9) formed into a predetermined shape by injection molding of a resin containing a fluorescent substance to a resin sealing body (7). That is, the fluorescent cover (9) can be exchangeably attached to the resin sealing body (7) of the semiconductor light emitting device. In particular, since the fluorescent cover (9) has elasticity, it can be easily attached to the resin sealing body (7) of a commercially available semiconductor light emitting device. Further, since the fluorescent cover (9) has elasticity and an inner surface having the same shape as that of the resin sealing body (7), the fluorescent cover (9) is in close contact with the surface of the resin sealing body (7). An air layer can be prevented from being formed between the light-emitting device and the fluorescent cover (9). Further, due to the elasticity of the fluorescent cover (9), even after an external force such as vibration is applied to the fluorescent cover (9) after the fluorescent cover (9) is adhered to the resin sealed body (7), the fluorescent cover (9) is not covered with the resin sealed body. It does not easily come off from (7).
本実施の形態では下記の作用効果が得られる。
<1> 半導体発光素子（５）から生ずる光と蛍光体によって波長変換された光とを混合して所望の発光色が高輝度で得られる。
<2> 複数種の蛍光体を蛍光カバー（９）に混合することにより所望の混合色又は中間色の光を取り出すことができる。
<3> 蛍光体は蛍光カバー（９）に添加され、樹脂封止体（７）中には添加されないので、樹脂封止体（７）内では蛍光体による光散乱が生じない。
<4> また、十分に肉薄なフィルム状の蛍光カバー（９）内では蛍光体による光散乱は比較的小さい。このため、ヘッダ（１）及び樹脂封止体（７）のレンズ部（７ｂ）の形状等によって所望の光指向性が得られ、波長変換に伴う輝度の低下を最小限に抑制することができる。
<5> 蛍光カバー（９）によって市販の半導体発光素子（５）から生ずる光とは異なる波長の光を取り出すことができる。
<6> 蛍光カバー（９）を容易に交換して異なる波長の光を取り出すことができる。
<7> 蛍光カバー（９）が樹脂封止体（７）に密着して装着されるので、装着後に振動等の外力が蛍光カバー（９）に加えられても蛍光カバー（９）は樹脂封止体（７）から容易には離脱しない。
<8> 市販の半導体発光素子（５）に蛍光カバー（９）を被着できるので、半導体発光装置を安価に製造することができる。
In the present embodiment, the following operational effects can be obtained.
<1> By mixing light emitted from the semiconductor light emitting element (5) and light whose wavelength has been converted by the phosphor, a desired emission color can be obtained with high luminance.
<2> By mixing a plurality of types of phosphors with the fluorescent cover (9), light of a desired mixed color or intermediate color can be extracted.
<3> Since the phosphor is added to the fluorescent cover (9) and is not added to the resin sealing body (7), light scattering by the phosphor does not occur in the resin sealing body (7).
<4> In the sufficiently thin film-like fluorescent cover (9), light scattering by the fluorescent material is relatively small. For this reason, desired light directivity can be obtained by the shape of the lens portion (7b) of the header (1) and the resin sealing body (7), and a decrease in luminance due to wavelength conversion can be suppressed to a minimum. .
<5> With the fluorescent cover (9), light having a different wavelength from the light generated from the commercially available semiconductor light emitting device (5) can be extracted.
<6> Light of different wavelengths can be extracted by easily replacing the fluorescent cover (9).
<7> Since the fluorescent cover (9) is attached in close contact with the resin sealing body (7), even if external force such as vibration is applied to the fluorescent cover (9) after mounting, the fluorescent cover (9) is sealed with the resin. It does not easily come off the stop (7).
<8> Since the fluorescent cover (9) can be attached to the commercially available semiconductor light emitting element (5), the semiconductor light emitting device can be manufactured at low cost.
本発明の前記実施の形態では、相対的に小さい発光波長の光によって励起されて相対的に大きい発光波長の光を放出する蛍光体を用いたが、相対的に大きい発光波長の光によって励起されて相対的に小さい発光波長の光を放出する蛍光体を用いてもよい。この場合、発光波長の大きい半導体発光素子を使用して発光波長の比較的小さい発光色の半導体発光装置を得ることができる。 In the embodiment of the present invention, the phosphor that is excited by light having a relatively small emission wavelength and emits light having a relatively large emission wavelength is used, but is excited by light having a relatively large emission wavelength. And a phosphor that emits light having a relatively small emission wavelength. In this case, it is possible to obtain a semiconductor light emitting device of a light emission color having a relatively small emission wavelength by using a semiconductor light emitting element having a large emission wavelength.
ＬＥＤ（８）の樹脂封止体（７）の中にも、蛍光カバー（９）中の蛍光体による光変換を補助する少量の蛍光体を添加してもよい。但し、樹脂封止体（７）中に蛍光体を添加すると、発光輝度を低下するので実施例のように、蛍光カバー（９）のみに蛍光体を添加するのが望ましい。蛍光カバー（９）内に蛍光体と共に蛍光増感剤を混合してもよい。 A small amount of phosphor that assists light conversion by the phosphor in the fluorescent cover (9) may be added to the resin sealing body (7) of the LED (8). However, when a phosphor is added to the resin sealing body (7), the emission luminance is reduced. Therefore, it is desirable to add the phosphor only to the phosphor cover (9) as in the embodiment. A fluorescent sensitizer may be mixed in the fluorescent cover (9) together with the fluorescent substance.
樹脂封止体（７）全体でなく、レンズ部（７ｂ）のみに蛍光カバー（９）を部分的に被着してもよい。樹脂封止体（７）と蛍光カバー（９）との間に空気層が形成されることを防止するため、蛍光カバー（９）に小さな孔を複数個形成してもよい。この場合、蛍光体によって波長変換された光と、孔を通じて放出される発光素子（５）からの光との混合色を観察することができる。樹脂封止体（７）と蛍光カバー（９）との間に透光性の接着剤を充填して、樹脂封止体（７）と蛍光カバー（９）との間の空気層を除去して発光効率を向上してもよい。また、例えば図５に示すように、チップＬＥＤ（８）にも本発明を適用することができる。この場合、基板（１１）上に印刷形成された配線導体がリードに相当し、樹脂封止体（７）に蛍光カバー（９）が被着される。蛍光カバー（９）に対向してグラスファイバー又は導光板等のライトガイド（１０）が設けられる。ライトガイド（１０）の他端（１０ｂ）又は他方の主面（１０ｄ）には光反射面が形成される。チップＬＥＤ（８）から照射され且つ蛍光カバー（９）内で波長変換された光はライトガイド（１０）の一端（１０ａ）からライトガイド（１０）内に受光され、ライトガイド（１０）の他端（１０ｂ）又は一方の主面（１０ｃ）から照射される。 The fluorescent cover (9) may be partially applied to only the lens portion (7b), not to the entire resin sealing body (7). In order to prevent an air layer from being formed between the resin sealing body (7) and the fluorescent cover (9), a plurality of small holes may be formed in the fluorescent cover (9). In this case, a mixed color of the light whose wavelength has been converted by the phosphor and the light emitted from the light emitting element (5) emitted through the hole can be observed. A translucent adhesive is filled between the resin sealing body (7) and the fluorescent cover (9) to remove an air layer between the resin sealing body (7) and the fluorescent cover (9). To improve the luminous efficiency. Further, for example, as shown in FIG. 5, the present invention can be applied to a chip LED (8). In this case, the wiring conductor printed on the substrate (11) corresponds to the lead, and the fluorescent cover (9) is attached to the resin sealing body (7). A light guide (10) such as a glass fiber or a light guide plate is provided to face the fluorescent cover (9). A light reflecting surface is formed on the other end (10b) or the other main surface (10d) of the light guide (10). The light emitted from the chip LED (8) and wavelength-converted in the fluorescent cover (9) is received in the light guide (10) from one end (10a) of the light guide (10), and the other light guide (10). Irradiation is performed from the end (10b) or one main surface (10c).
（１）・・ヘッダ、 （２）・・第１のリード、 （３）・・リード細線接続部、 （４）・・第２のリード、 （５）・・半導体発光素子、 （６）・・リード細線、 （７）・・樹脂封止体、 （７ａ）・・封止部、 （７ｂ）・・レンズ部、 （８）・・ＬＥＤ、 （９）・・蛍光カバー、 （９ａ）・・カバー本体、 （９ｂ）・・球面部、 （９ｃ）・・開口部、 （９ｄ）・・内面、 (1) ··· header, (2) ··· first lead, (3) ··· lead thin wire connection part, (4) ··· second lead, (5) ··· semiconductor light emitting element, (6) ·・ Lead wire, (7) ・ ・ Resin sealed body, (7a) ・ ・ Sealing part, (7b) ・ ・ Lens part, (8) ・ ・ LED, (9) ・ ・ Fluorescent cover, (9a) ・・ Cover body, (9b) ・ ・ Spherical part, (9c) ・ ・ Opening part, (9d) ・ ・ Inner surface,
Claims (5)
蛍光体を含まない前記樹脂封止体と、蛍光体を含む透光性の蛍光カバーとを備え、
前記蛍光カバーは、肉薄なフィルム状に形成された樹脂からなり且つ前記樹脂封止体に密着する弾力性を有し、
前記半導体発光素子から照射した光により前記蛍光カバー内に配合された前記蛍光体を励起し、前記半導体発光素子から生ずる光とは異なる波長の光を前記蛍光カバーの外部に取り出すことを特徴とする半導体発光装置。 A plurality of leads, a semiconductor light emitting device electrically connected between the plurality of leads, and a semiconductor light emitting device including a resin sealing member that seals one end of the plurality of leads and the semiconductor light emitting element,
The resin sealing body not containing a phosphor, comprising a translucent fluorescent cover containing a phosphor,
The fluorescent cover is made of a resin formed into a thin film and has elasticity in close contact with the resin sealing body,
The light emitted from the semiconductor light emitting element excites the phosphor compounded in the fluorescent cover, and light having a different wavelength from the light generated from the semiconductor light emitting element is taken out of the fluorescent cover. Semiconductor light emitting device.
前記カバー本体及び前記球面部は前記蛍光カバーの弾力性によりそれぞれ前記樹脂封止体の前記封止部及び前記レンズ部に密着する請求項１又は２に記載の半導体発光装置。 The resin sealing body includes a cylindrical sealing portion, and a substantially hemispherical lens portion formed integrally with one end of the sealing portion, and the fluorescent cover has a cylindrical cover body. And a spherical portion integrally formed on the cover body in a hemispherical shape, wherein the cover body has a shape conforming to the sealing portion of the resin sealing body, and the spherical portion is formed by the resin sealing. Having a shape that matches the lens portion of the body,
3. The semiconductor light emitting device according to claim 1, wherein the cover body and the spherical portion adhere to the sealing portion and the lens portion of the resin sealing body by elasticity of the fluorescent cover, respectively. 4.
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| US8294160B2 (en) | 2005-01-20 | 2012-10-23 | Toyoda Gosei Co., Ltd. | Light emitting device including a sealing portion, and method of making the same |
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| JP2000036625A (en) * | 1999-07-19 | 2000-02-02 | Sanken Electric Co Ltd | Semiconductor light-emitting device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8294160B2 (en) | 2005-01-20 | 2012-10-23 | Toyoda Gosei Co., Ltd. | Light emitting device including a sealing portion, and method of making the same |
| KR100976528B1 (en) * | 2008-08-14 | 2010-08-17 | 주식회사 루미맥스테크놀러지 | LED lamp of antiglare |
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