JP3491016B2 - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JP3491016B2 JP3491016B2 JP20436499A JP20436499A JP3491016B2 JP 3491016 B2 JP3491016 B2 JP 3491016B2 JP 20436499 A JP20436499 A JP 20436499A JP 20436499 A JP20436499 A JP 20436499A JP 3491016 B2 JP3491016 B2 JP 3491016B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- semiconductor light
- resin
- cover
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、レンズ型の樹脂封
止体を備えた半導体発光装置に係り、詳細には発光素子
から発光された光を波長変換してレンズ外部に放射する
半導体発光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device provided with a lens-type resin encapsulant, and more particularly to a semiconductor light emitting device for wavelength-converting light emitted from a light emitting element and radiating the light to the outside of the lens. Regarding
【０００２】[0002]
【従来の技術】図６に示す従来の半導体発光装置は、一
端に皿状の支持体（ヘッダ）（１）を備えた第１のリー
ド（２）と、一端にリード細線接続部（メタルポスト）
（３）を備えた第２のリード（４）と、ヘッダ（１）に
接着剤によって固着された半導体発光素子（５）と、半
導体発光素子（５）の上面に形成された２つの電極（図
示せず）とメタルポスト（３）等との間を電気的に接続
する２本のリード細線（６）と、半導体発光素子
（５）、リード細線（６）、第１のリード（２）及び第
２のリード（４）の一端側を被覆する樹脂封止体（７）
とを有する。この半導体発光装置の発光色は、半導体発
光素子（５）の固有の発光波長によって決定され、例え
ば、ＧａＡｌＰ系、ＧａＰ系及びＧａＮ系の半導体発光
素子を半導体発光素子（５）に使用すれば発光色は、そ
れぞれ赤色、緑色及び青色となる。また、ＧａＡｓ系の
半導体発光素子を使用すれば赤外発光の半導体発光装置
が得られる。2. Description of the Related Art A conventional semiconductor light emitting device shown in FIG. 6 has a first lead (2) having a dish-shaped support (header) (1) at one end and a lead fine wire connecting portion (metal post) at one end. )
A second lead (4) having (3), a semiconductor light emitting device (5) fixed to the header (1) by an adhesive, and two electrodes () formed on the upper surface of the semiconductor light emitting device (5). Two lead thin wires (6) electrically connecting between a metal post (3) and the like (not shown), a semiconductor light emitting element (5), a lead thin wire (6), and a first lead (2). And a resin sealing body (7) for covering one end side of the second lead (4)
Have and. The emission color of this semiconductor light emitting device is determined by the emission wavelength peculiar to the semiconductor light emitting element (5). For example, when a GaAlP-based, GaP-based, or GaN-based semiconductor light emitting element is used for the semiconductor light emitting element (5), light is emitted. The colors are red, green and blue, respectively. Further, if a GaAs semiconductor light emitting element is used, an infrared light emitting semiconductor light emitting device can be obtained.
【０００３】[0003]
【発明が解決しようとする課題】ところで、近年では
赤、緑、青の中間色又は白色等の混合色の発光が可能な
半導体発光装置の実現が望まれている。中間色又は混合
色を実現するため、半導体発光素子の発光により励起さ
れて蛍光を発する蛍光体を樹脂封止体（７）中に添加
し、半導体発光素子（５）の光を波長変換して樹脂封止
体（７）の外部に放射する半導体発光装置が提案されて
いる。蛍光体を樹脂封止体（７）中に混合する半導体発
光装置は、光の波長変換によって所望の発光色を得られ
る反面、蛍光体による光散乱によって発光輝度が著しく
低下する欠点があった。そこで、本発明では、高輝度で
所望の発光色が得られる半導体発光装置を提供すること
を目的とする。By the way, in recent years, it has been desired to realize a semiconductor light emitting device capable of emitting light of a mixed color such as red, green, blue intermediate color or white. In order to realize an intermediate color or a mixed color, a phosphor that is excited by the light emission of the semiconductor light emitting element and emits fluorescence is added to the resin encapsulant (7) to convert the light of the semiconductor light emitting element (5) into a resin. A semiconductor light emitting device that radiates to the outside of the sealing body (7) has been proposed. The semiconductor light emitting device in which the phosphor is mixed in the resin encapsulant (7) can obtain a desired emission color by wavelength conversion of light, but has a drawback that the light emission brightness is significantly reduced due to light scattering by the phosphor. Therefore, it is an object of the present invention to provide a semiconductor light emitting device that can obtain a desired emission color with high brightness.
【０００４】[0004]
【課題を解決するための手段】本発明による半導体発光
装置は、複数のリード（２）（４）と、複数のリード
（２）（４）間に電気的に接続された半導体発光素子
（５）と、複数のリード（２）（４）の一端及び半導体
発光素子（５）を封止する樹脂封止体（７）と、一端に
開口部（９ｃ）が設けられ且つ樹脂封止体（７）に被着
された透光性の蛍光カバー（９）とを備えている。蛍光
カバー（９）は、蛍光体を含む樹脂の射出成形により樹
脂封止体（７）と同一の形状の内面を有する所定の形状
に形成され、且つ交換可能に樹脂封止体（７）に被着さ
れる。樹脂封止体（７）に被着された蛍光カバー（９）
は弾力性を有し、樹脂封止体（７）に密着して樹脂封止
体（７）と蛍光カバー（９）との間での空気層の形成を
防止できる。更に、蛍光カバー（９）の弾力性により、
樹脂封止体（７）に被着した後、振動等の外力が蛍光カ
バー（９）に加えられても蛍光カバー（９）は樹脂封止
体（７）から容易には離脱しない。A semiconductor light emitting device according to the present invention comprises a plurality of leads (2) (4) and a semiconductor light emitting element (5) electrically connected between the plurality of leads (2) (4). ), A resin encapsulant (7) for encapsulating one end of the plurality of leads (2) (4) and the semiconductor light emitting element (5), and an opening (9c) provided at one end and a resin encapsulant (9c). 7) and a translucent fluorescent cover (9). The fluorescent cover (9) is formed into a predetermined shape having an inner surface having the same shape as the resin sealing body (7) by injection molding of a resin containing a fluorescent material, and is replaceable with the resin sealing body (7). Be applied. Fluorescent cover (9) attached to resin encapsulant (7)
Has elasticity and can adhere to the resin encapsulant (7) to prevent formation of an air layer between the resin encapsulant (7) and the fluorescent cover (9). Furthermore, due to the elasticity of the fluorescent cover (9),
After being attached to the resin encapsulant (7), even if an external force such as vibration is applied to the phosphor encapsulant (9), the phosphor encapsulant (9) does not easily separate from the resin encapsulant (7).
【０００５】半導体発光素子（５）から照射した光によ
り蛍光カバー（９）内に配合された蛍光体を励起し、半
導体発光素子（５）から生ずる光とは異なる波長の光を
樹脂封止体（７）の外部に取り出す。蛍光カバー（９）
内の蛍光体は、半導体発光素子（５）から照射した相対
的に小さい発光波長の光により励起され、半導体発光素
子（５）から生ずる光とは異なる相対的に大きい発光波
長の光を取り出すことができるので、高輝度で所望の発
光色が得られる。また、市販の半導体発光装置の樹脂封
止体（７）に対し、蛍光カバー（９）を交換することが
できる。The light radiated from the semiconductor light emitting element (5) excites the phosphor mixed in the fluorescent cover (9), and the resin sealing body emits light having a wavelength different from the light emitted from the semiconductor light emitting element (5). Take out to the outside of (7). Fluorescent cover (9)
The fluorescent substance inside is excited by the light having a relatively small emission wavelength emitted from the semiconductor light emitting device (5), and extracts the light having a relatively large emission wavelength different from the light emitted from the semiconductor light emitting device (5). Therefore, a desired emission color can be obtained with high brightness. Further, the fluorescent cover (9) can be replaced with respect to the resin sealing body (7) of the commercially available semiconductor light emitting device.
【０００６】本発明の実施の形態では、半導体発光素子
（５）の発光波長は４３０〜４８０ｎｍであり、蛍光体
により変換された発光波長は５００〜６００ｎｍであ
る。In the embodiment of the present invention, the emission wavelength of the semiconductor light emitting device (5) is 430 to 480 nm, and the emission wavelength converted by the phosphor is 500 to 600 nm.
【０００７】樹脂封止体（７）は、円柱状の封止部（７
ａ）と、封止部（７ａ）の一端側にこれと一体に形成さ
れたほぼ半球状のレンズ部（７ｂ）とを備え、蛍光カバ
ー（９）は、円筒状のカバー本体（９ａ）と、カバー本
体（９ａ）に一体に半球状に形成された球面部（９ｂ）
とを備え、カバー本体（９ａ）は樹脂封止体（７）の封
止部（７ａ）に合致する形状を有し、球面部（９ｂ）は
樹脂封止体（７）のレンズ部（７ｂ）に合致する形状を
有し、カバー本体（９ａ）及び球面部（９ｂ）は、それ
ぞれ樹脂封止体（７）の封止部（７ａ）及びレンズ部
（７ｂ）に密着する。蛍光カバー（９）は蛍光体による
光散乱が減少する厚さで十分に肉薄なフィルム状に形成
される。樹脂封止体（７）と蛍光カバー（９）との間の
空気を除去する複数個の小さな孔が蛍光カバー（９）に
形成される。The resin encapsulant (7) has a cylindrical encapsulation portion (7
a) and a substantially hemispherical lens part (7b) integrally formed with one end of the sealing part (7a), and the fluorescent cover (9) includes a cylindrical cover body (9a). , A spherical portion (9b) integrally formed with the cover body (9a) in a hemispherical shape
And the cover body (9a) has a shape matching the sealing portion (7a) of the resin sealing body (7), and the spherical surface portion (9b) has a lens portion (7b) of the resin sealing body (7). ), The cover body (9a) and the spherical surface portion (9b) are in close contact with the sealing portion (7a) and the lens portion (7b) of the resin sealing body (7), respectively. The fluorescent cover (9) is formed into a sufficiently thin film with a thickness that reduces light scattering by the fluorescent material. A plurality of small holes for removing air between the resin sealing body (7) and the fluorescent cover (9) are formed in the fluorescent cover (9).
【０００８】[0008]
【発明の実施の形態】以下、発光ダイオードに適用した
本発明による半導体発光装置の実施の形態を図１〜図４
について説明する。図１〜図４では、図６に示す部分と
同一の箇所には同一の符号を付し、説明を省略する。図
１に示すように、本実施の形態による半導体発光装置
は、レンズ形の樹脂封止体（７）を備えたＬＥＤ（半導
体発光ダイオード）（８）と、樹脂封止体（７）を包囲
する蛍光カバー（９）とを備えている。周知のトランス
ファモールド法又はキャスティング法によって形成され
る樹脂封止体（７）は、円柱状の封止部（７ａ）と、封
止部（７ａ）の一端側にこれと一体に形成されたほぼ半
球状のレンズ部（７ｂ）とを有する。樹脂封止体（７）
は光透過性を有する例えばエポキシ系樹脂等を主成分と
し、これにシリカ等から成る散乱剤が混入され、若干の
非発光物質の顔料が添加される場合もある。図２に示す
ＬＥＤ（８）は、図５に示す従来の半導体発光装置と基
本的に同一の構造を備えているが、樹脂封止体（７）に
は蛍光体は添加されない。図２に示すＬＥＤ（８）の半
導体発光素子（５）には、４３０〜４８０ｎｍ付近に発
光ピークを有する青色系発光色を生ずるＧａＮ系の半導
体発光素子が使用される。蛍光カバー（９）は、例えば
樹脂基材中に半導体発光素子（５）の発光によって励起
されて蛍光を発する蛍光体が添加されている。樹脂基材
は透光性のポリエステル樹脂、アクリル樹脂、ウレタ
ン、ナイロン、シリコーン樹脂、塩化ビニル、ポリスチ
ロール、ベークライト、ＣＲ３９（アクリル・グリコー
ル・カーボネート樹脂）等から選択される。ウレタン、
ナイロン、シリコーン樹脂は蛍光カバー（９）にある程
度の弾力性を付与するため、樹脂封止体（７）への装着
が容易である。蛍光体は、光線が照射されたときに、そ
の光線を吸収しながら、その光線の波長とは異なる波長
の可視光線を発射する物質をいう。一般に蛍光体は、基
体、付活体及び融剤よりなる。基体には、亜鉛、カドミ
ウム、マグネシウム、シリコン、イットリウム等の稀土
類元素等の酸化物、硫化物、珪酸塩、バナジン酸塩等が
適し、銅、鉄、ニッケルのそれ等は不適である。付活体
は銀、銅、マンガン、クロム、ユウロビウム、亜鉛、ア
ルミニウム、鉛、リン、砒素、金等で一般に０.００１
％〜数％程度の微量が用いられる。融剤は普通塩化ナト
リウム、塩化カリウム、炭酸マグネシウム、塩化バリウ
ムが使用される。前記無機蛍光体の外、フルオレセイ
ン、エオシン、油類（鉱物油）等の有機蛍光体を使用で
きる。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a semiconductor light emitting device according to the present invention applied to a light emitting diode will be described below with reference to FIGS.
Will be described. 1 to 4, the same parts as those shown in FIG. 6 are designated by the same reference numerals, and the description thereof will be omitted. As shown in FIG. 1, the semiconductor light emitting device according to the present embodiment surrounds an LED (semiconductor light emitting diode) (8) including a lens-shaped resin encapsulant (7) and a resin encapsulant (7). And a fluorescent cover (9). A resin encapsulant (7) formed by a well-known transfer molding method or casting method has a cylindrical encapsulation portion (7a), and is formed integrally with one end of the encapsulation portion (7a). It has a hemispherical lens part (7b). Resin sealing body (7)
In some cases, the main component is, for example, an epoxy resin having a light-transmitting property, a scattering agent made of silica or the like is mixed therein, and a small amount of a non-luminous substance pigment is added. The LED (8) shown in FIG. 2 has basically the same structure as the conventional semiconductor light emitting device shown in FIG. 5, but no phosphor is added to the resin encapsulant (7). As the semiconductor light emitting device (5) of the LED (8) shown in FIG. 2, a GaN based semiconductor light emitting device that produces a blue emission color having an emission peak in the vicinity of 430 to 480 nm is used. The fluorescent cover (9) has, for example, a fluorescent material that is excited by the light emission of the semiconductor light emitting device (5) and emits fluorescent light in a resin base material. The resin base material is selected from translucent polyester resin, acrylic resin, urethane, nylon, silicone resin, vinyl chloride, polystyrene, bakelite, CR39 (acrylic / glycol / carbonate resin) and the like. Urethane,
Nylon and silicone resins give elasticity to the fluorescent cover (9) to some extent, so that the fluorescent cover (9) can be easily attached to the resin sealing body (7). A phosphor refers to a substance that emits visible light having a wavelength different from the wavelength of the light ray when the light ray is irradiated, absorbing the light ray. Generally, the phosphor comprises a substrate, an activator and a flux. Suitable oxides of rare earth elements such as zinc, cadmium, magnesium, silicon and yttrium, sulfides, silicates, vanadates and the like are not suitable for the substrate, but copper, iron and nickel are not suitable. The activator is silver, copper, manganese, chromium, eurobium, zinc, aluminum, lead, phosphorus, arsenic, gold or the like, and is generally 0.001.
A minute amount of about several percent to several percent is used. As the flux, sodium chloride, potassium chloride, magnesium carbonate, barium chloride are usually used. In addition to the inorganic phosphors, organic phosphors such as fluorescein, eosin, and oils (mineral oil) can be used.
【０００９】図３に示すように、蛍光カバー（９）は、
円筒状のカバー本体（９ａ）と、カバー本体（９ａ）に
一体に半球状に形成された球面部（９ｂ）とを備えてい
る。円筒状カバー本体（９ａ）は樹脂封止体（７）の封
止部（７ａ）に合致する形状を備え、球面部（９ｂ）は
樹脂封止体（７）のレンズ部（７ｂ）に合致する形状を
有する。蛍光カバー（９）の内面（９ｄ）は樹脂封止体
（７）と同一の形状を有し、カバー本体（９ａ）の一端
に設けられた開口部（９ｃ）を通じて、蛍光カバー
（９）を樹脂封止体（７）に装着すると、蛍光カバー
（９）の内面（９ｄ）は樹脂封止体（７）の外面に密着
する。即ち、蛍光カバー（９）のカバー本体（９ａ）と
球面部（９ｂ）はそれぞれ樹脂封止体（７）の封止部
（７ａ）とレンズ部（７ｂ）に密着して装着されるの
で、装着後に振動等の外力が蛍光カバー（９）に加えら
れても蛍光カバー（９）は樹脂封止体（７）から容易に
は離脱しない。As shown in FIG. 3, the fluorescent cover (9) is
It is provided with a cylindrical cover body (9a) and a spherical surface portion (9b) integrally formed in the cover body (9a) in a hemispherical shape. The cylindrical cover body (9a) has a shape that matches the sealing portion (7a) of the resin sealing body (7), and the spherical surface portion (9b) matches the lens portion (7b) of the resin sealing body (7). Has a shape to The inner surface (9d) of the fluorescent cover (9) has the same shape as the resin encapsulant (7), and the fluorescent cover (9) is opened through an opening (9c) provided at one end of the cover body (9a). When mounted on the resin encapsulant (7), the inner surface (9d) of the fluorescent cover (9) is in close contact with the outer surface of the resin encapsulant (7). That is, since the cover body (9a) and the spherical surface portion (9b) of the fluorescent cover (9) are closely attached to the sealing portion (7a) and the lens portion (7b) of the resin sealing body (7), respectively. Even if an external force such as vibration is applied to the fluorescent cover (9) after mounting, the fluorescent cover (9) does not easily separate from the resin sealing body (7).
【００１０】本実施例では、４３０〜４８０ｎｍ付近の
波長によって励起され、５００〜６００ｎｍ付近に発光
ピークを有する発光波長が得られ且つ例えば基体が硫化
亜鉛及び硫化カドミウム、付活体が銅、融剤が塩化バリ
ウム及び塩化カリウムから成る蛍光体を添加する。In this example, an emission wavelength having an emission peak near 500 to 600 nm was obtained by being excited by a wavelength near 430 to 480 nm, and for example, the substrate was zinc sulfide and cadmium sulfide, the activator was copper, and the flux was A phosphor consisting of barium chloride and potassium chloride is added.
【００１１】図１に示す本発明の半導体発光装置では、
４３０〜４８０ｎｍ付近に発光ピークを有する青色発光
のＧａＮ系半導体発光素子を半導体発光素子（５）に使
用して、半導体発光素子（５）から発光した光を樹脂封
止体（７）を介して蛍光カバー（９）中の蛍光体に照射
して、蛍光体を励起する。このため、蛍光カバー（９）
中の蛍光体によって５００〜６００ｎｍ付近に発光ピー
クを有する白色光に波長変換されて蛍光カバー（９）の
外部に取り出すことができる。この場合に、蛍光体は蛍
光カバー（９）に添加され、樹脂封止体（７）中には添
加されないので、樹脂封止体（７）内では蛍光体による
光散乱が生じない。また、十分に肉薄なフィルム状の蛍
光カバー（９）内では蛍光体による光散乱は比較的小さ
い。このため、ヘッダ（１）及び樹脂封止体（７）のレ
ンズ部（７ｂ）の形状等によって所望の光指向性が得ら
れ、波長変換に伴う輝度の低下を最小限に抑制すること
ができる。In the semiconductor light emitting device of the present invention shown in FIG.
A blue light-emitting GaN-based semiconductor light emitting device having an emission peak near 430 to 480 nm is used for the semiconductor light emitting device (5), and light emitted from the semiconductor light emitting device (5) is passed through the resin sealing body (7). The phosphor in the phosphor cover (9) is irradiated to excite the phosphor. Therefore, the fluorescent cover (9)
The fluorescent substance therein converts the wavelength into white light having an emission peak in the vicinity of 500 to 600 nm, and can be taken out of the fluorescent cover (9). In this case, since the phosphor is added to the fluorescent cover (9) and not to the resin encapsulant (7), light scattering by the phosphor does not occur inside the resin encapsulant (7). Further, the light scattering by the phosphor is relatively small in the sufficiently thin film-like fluorescent cover (9). Therefore, a desired light directivity can be obtained depending on the shapes of the header (1) and the lens portion (7b) of the resin encapsulant (7), and a decrease in luminance due to wavelength conversion can be suppressed to a minimum. .
【００１２】本実施例の半導体発光装置は、蛍光体を含
む樹脂の射出成形により所定の形状に形成した蛍光カバ
ー（９）を樹脂封止体（７）に被着することにより簡単
に完成できる。即ち、半導体発光装置の樹脂封止体
（７）に対し、蛍光カバー（９）を交換可能に被着でき
る。特に、蛍光カバー（９）は弾力性を有するため、市
販の半導体発光装置の樹脂封止体（７）に容易に被着す
ることができる。また、蛍光カバー（９）は弾力を有す
ると同時に樹脂封止体（７）と同一の形状の内面を有す
るので、樹脂封止体（７）の表面に密着して樹脂封止体
（７）と蛍光カバー（９）との間での空気層の形成を防
止できる。更に、蛍光カバー（９）の弾力性により、樹
脂封止体（７）に被着した後、振動等の外力が蛍光カバ
ー（９）に加えられても蛍光カバー（９）は樹脂封止体
（７）から容易には離脱しない。The semiconductor light emitting device of this embodiment can be easily completed by attaching a fluorescent cover (9) formed in a predetermined shape by injection molding of a resin containing a fluorescent material to the resin sealing body (7). . That is, the fluorescent cover (9) can be replaceably attached to the resin sealing body (7) of the semiconductor light emitting device. In particular, since the fluorescent cover (9) has elasticity, it can be easily attached to the resin sealing body (7) of a commercially available semiconductor light emitting device. Further, since the fluorescent cover (9) has elasticity and at the same time has an inner surface of the same shape as the resin encapsulant (7), the phosphor cover (9) is in close contact with the surface of the resin encapsulant (7). It is possible to prevent the formation of an air layer between the fluorescent cover and the fluorescent cover (9). Furthermore, due to the elasticity of the fluorescent cover (9), even after an external force such as vibration is applied to the fluorescent cover (9) after the fluorescent cover (9) is attached to the resin sealing body (7), the fluorescent cover (9) can be made into the resin sealing body. It does not easily leave (7).
【００１３】本実施の形態では下記の作用効果が得られ
る。
<1> 蛍光カバー（９）によって、半導体発光素子
（５）から生ずる光の発光波長よりも大きな発光波長の
光を高輝度で取り出すことができる。
<2> 蛍光体は蛍光カバー（９）に添加され、樹脂封止
体（７）中には添加されないので、樹脂封止体（７）内
では蛍光体による光散乱が生じない。
<3> また、十分に肉薄なフィルム状の蛍光カバー
（９）内では蛍光体による光散乱は比較的小さい。この
ため、ヘッダ（１）及び樹脂封止体（７）のレンズ部
（７ｂ）の形状等によって所望の光指向性が得られ、波
長変換に伴う輝度の低下を最小限に抑制することができ
る。
<4> 蛍光カバー（９）を容易に交換して異なる波長の
光を取り出すことができる。
<5> 複数種の蛍光体を蛍光カバー（９）に混合するこ
とにより所望の混合色又は中間色の光を取り出すことが
できる。
<6> 蛍光カバー（９）が樹脂封止体（７）に密着して
装着されるので、装着後に振動等の外力が蛍光カバー
（９）に加えられても蛍光カバー（９）は樹脂封止体
（７）から容易には離脱しない。
<7> 市販の半導体発光素子（５）に蛍光カバー（９）
を被着できるので、半導体発光装置を安価に製造するこ
とができる。In this embodiment, the following operational effects can be obtained. <1> With the fluorescent cover (9), light having an emission wavelength larger than that of the light emitted from the semiconductor light emitting element (5) can be extracted with high brightness. <2> Since the phosphor is added to the fluorescent cover (9) and not to the resin encapsulant (7), light scattering by the phosphor does not occur in the resin encapsulant (7). <3> In the sufficiently thin film-like fluorescent cover (9), light scattering by the fluorescent material is relatively small. Therefore, a desired light directivity can be obtained depending on the shapes of the header (1) and the lens portion (7b) of the resin encapsulant (7), and a decrease in luminance due to wavelength conversion can be suppressed to a minimum. . <4> The fluorescent cover (9) can be easily replaced to take out light of different wavelengths. <5> By mixing a plurality of types of phosphors in the fluorescent cover (9), it is possible to extract light of a desired mixed color or intermediate color. <6> Since the fluorescent cover (9) is attached in close contact with the resin encapsulant (7), the fluorescent cover (9) is sealed with the resin even if an external force such as vibration is applied to the fluorescent cover (9) after the attachment. It does not come off easily from the stopper (7). <7> Commercially available semiconductor light emitting device (5) with fluorescent cover (9)
Therefore, the semiconductor light emitting device can be manufactured at low cost.
【００１４】ＬＥＤ（８）の樹脂封止体（７）の中に
も、蛍光カバー（９）中の蛍光体による光変換を補助す
る少量の蛍光体を添加してもよい。但し、樹脂封止体
（７）中に蛍光体を添加すると、発光輝度を低下するの
で実施例のように、蛍光カバー（９）のみに蛍光体を添
加するのが望ましい。蛍光カバー（９）内に蛍光体と共
に蛍光増感剤を混合してもよい。A small amount of phosphor may be added to the resin encapsulant (7) of the LED (8) to assist the light conversion by the phosphor in the phosphor cover (9). However, when a phosphor is added to the resin encapsulant (7), the emission brightness is lowered, so it is desirable to add the phosphor only to the phosphor cover (9) as in the embodiment. You may mix a fluorescent sensitizer with a fluorescent substance in the fluorescent cover (9).
【００１５】樹脂封止体（７）全体でなく、レンズ部
（７ｂ）のみに蛍光カバー（９）を部分的に被着しても
よい。樹脂封止体（７）と蛍光カバー（９）との間に空
気層が形成されることを防止するため、蛍光カバー
（９）に小さな孔を複数個形成してもよい。この場合、
蛍光体によって波長変換された光と、孔を通じて放出さ
れる発光素子（５）からの光との混合色を観察すること
ができる。樹脂封止体（７）と蛍光カバー（９）との間
に透光性の接着剤を充填して、樹脂封止体（７）と蛍光
カバー（９）との間の空気層を除去して発光効率を向上
してもよい。また、例えば図５に示すように、チップＬ
ＥＤ（８）にも本発明を適用することができる。この場
合、基板（１１）上に印刷形成された配線導体がリード
に相当し、樹脂封止体（７）に蛍光カバー（９）が被着
される。蛍光カバー（９）に対向してグラスファイバー
又は導光板等のライトガイド（１０）が設けられる。ラ
イトガイド（１０）の他端（１０ｂ）又は他方の主面
（１０ｄ）には光反射面が形成される。チップＬＥＤ
（８）から照射され且つ蛍光カバー（９）内で波長変換
された光はライトガイド（１０）の一端（１０ａ）から
ライトガイド（１０）内に受光され、ライトガイド（１
０）の他端（１０ｂ）又は一方の主面（１０ｃ）から照
射される。The fluorescent cover (9) may be partially attached only to the lens portion (7b) instead of the entire resin encapsulant (7). A plurality of small holes may be formed in the fluorescent cover (9) in order to prevent an air layer from being formed between the resin sealing body (7) and the fluorescent cover (9). in this case,
It is possible to observe a mixed color of the light whose wavelength is converted by the phosphor and the light emitted from the light emitting device (5) through the hole. A transparent adhesive is filled between the resin encapsulant (7) and the fluorescent cover (9) to remove the air layer between the resin encapsulant (7) and the fluorescent cover (9). The luminous efficiency may be improved. Further, for example, as shown in FIG.
The present invention can also be applied to the ED (8). In this case, the wiring conductor printed and formed on the substrate (11) corresponds to a lead, and the resin cover (7) is covered with the fluorescent cover (9). A light guide (10) such as a glass fiber or a light guide plate is provided facing the fluorescent cover (9). A light reflecting surface is formed on the other end (10b) or the other main surface (10d) of the light guide (10). Chip LED
The light emitted from (8) and wavelength-converted in the fluorescent cover (9) is received into the light guide (10) from one end (10a) of the light guide (10), and the light guide (1) is received.
Irradiation is performed from the other end (10b) of (0) or one main surface (10c).
【００１６】[0016]
【発明の効果】前記のように、本発明では、半導体発光
素子から生ずる光の発光波長よりも大きな発光波長の光
を高輝度で取り出すことができる。蛍光体は蛍光カバー
に添加され、樹脂封止体中には添加されないので、樹脂
封止体内では蛍光体による光散乱が生じない。また、十
分に肉薄なフィルム状の蛍光カバー内では蛍光体による
光散乱は比較的小さい。このため、ヘッダ及び樹脂封止
体のレンズ部の形状等によって所望の光指向性が得ら
れ、波長変換に伴う輝度の低下を最小限に抑制すること
ができる。蛍光カバーを装着し又は交換することにより
容易に異なる波長の光を取り出すことができる。市販の
半導体発光素子に蛍光カバーを被着できるので、半導体
発光装置を安価に製造することができる。また、複数種
の蛍光体を蛍光カバーに混合することにより所望の混合
色又は中間色の光を取り出すことができる。As described above, according to the present invention, it is possible to extract light having an emission wavelength larger than the emission wavelength of light emitted from a semiconductor light emitting element with high brightness. Since the phosphor is added to the phosphor cover and not to the resin encapsulant, light scattering by the phosphor does not occur inside the resin encapsulant. Further, the light scattering by the phosphor is relatively small in the sufficiently thin film-like fluorescent cover. Therefore, desired light directivity can be obtained depending on the shapes of the header and the lens portion of the resin encapsulant, and a decrease in luminance due to wavelength conversion can be suppressed to a minimum. By attaching or replacing the fluorescent cover, light of different wavelengths can be easily extracted. Since the commercially available semiconductor light emitting element can be covered with the fluorescent cover, the semiconductor light emitting device can be manufactured at low cost. Further, by mixing a plurality of types of phosphors with the fluorescent cover, it is possible to extract light of a desired mixed color or intermediate color.
【図１】 発光ダイオードに適用した本発明による半導
体発光装置の断面図FIG. 1 is a sectional view of a semiconductor light emitting device according to the present invention applied to a light emitting diode.
【図２】 蛍光カバーを除去した本発明による半導体発
光装置の断面図FIG. 2 is a cross-sectional view of a semiconductor light emitting device according to the present invention with a fluorescent cover removed.
【図３】 蛍光カバーの断面図FIG. 3 is a sectional view of the fluorescent cover.
【図４】 蛍光カバーの横断面図FIG. 4 is a cross-sectional view of the fluorescent cover.
【図５】 チップＬＥＤに適用した本発明の他の実施例
を示す断面図FIG. 5 is a sectional view showing another embodiment of the present invention applied to a chip LED.
【図６】 従来の発光ダイオードの断面図FIG. 6 is a sectional view of a conventional light emitting diode.
（１）・・ヘッダ、 （２）・・第１のリード、
（３）・・リード細線接続部、 （４）・・第２のリー
ド、 （５）・・半導体発光素子、 （６）・・リード
細線、 （７）・・樹脂封止体、 （７ａ）・・封止
部、 （７ｂ）・・レンズ部、 （８）・・ＬＥＤ、
（９）・・蛍光カバー、 （９ａ）・・カバー本体、
（９ｂ）・・球面部、 （９ｃ）・・開口部、 （９
ｄ）・・内面、(1) .. header, (2) .. first lead,
(3) ··· Lead fine wire connection portion, (4) · · Second lead, (5) · · Semiconductor light emitting element, (6) · · Lead fine wire, (7) · · Resin encapsulant, (7a) ..Sealing part, (7b) .. Lens part, (8) .. LED,
(9) .. Fluorescent cover, (9a) .. cover body,
(9b) ··· spherical surface portion, (9c) ··· opening portion, (9
d) ...
───────────────────────────────────────────────────── フロントページの続き (72)発明者 鈴木 伸幸 埼玉県新座市北野３丁目６番３号 サン ケン電気株式会社内 (72)発明者 川栄 裕之 埼玉県新座市北野３丁目６番３号 サン ケン電気株式会社内 (56)参考文献 特開 昭58−196067（ＪＰ，Ａ) 特開 平５−152609（ＪＰ，Ａ) 実開 昭50−79379（ＪＰ，Ｕ) 実開 昭53−30783（ＪＰ，Ｕ) 実公 昭56−3885（ＪＰ，Ｙ２) ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Nobuyuki Suzuki 3-6 Kitano, Kitano, Niiza City, Saitama Prefecture Ken Electric Co., Ltd. (72) Inventor Hiroyuki Kawaei 3-6 Kitano, Kitano, Niiza City, Saitama Prefecture Ken Electric Co., Ltd. (56) References JP-A-58-196067 (JP, A) JP-A-5-152609 (JP, A) Actual development Sho 50-79379 (JP, U) Actual development Sho 53-30783 (JP, U) Actual public Sho 56-3885 (JP, Y2)
Claims (4)
気的に接続された半導体発光素子と、前記複数のリード
の一端及び前記半導体発光素子を封止する樹脂封止体
と、一端に開口が設けられ且つ前記樹脂封止体に被着さ
れた透光性の蛍光カバーとを備え、前記半導体発光素子
から照射した光により前記蛍光カバー内に配合された蛍
光体を励起し、前記半導体発光素子から生ずる光とは異
なる波長の光を前記樹脂封止体の外部に取り出す半導体
発光装置において、 前記蛍光カバーは、前記蛍光体を含む樹脂の射出成形に
より前記樹脂封止体と同一の形状の内面を有する所定の
形状に形成され、且つ交換可能に前記樹脂封止体に被着
され、 該樹脂封止体に被着された前記蛍光カバーは弾力性を有
し、前記樹脂封止体に密着し、 前記蛍光カバー内の蛍光体は、前記半導体発光素子から
照射した相対的に小さい発光波長の光により励起され、 前記半導体発光素子から生ずる光とは異なる相対的に大
きい発光波長の光を取り出すことを特徴とする半導体発
光装置。1. A plurality of leads, a semiconductor light emitting element electrically connected between the plurality of leads, one end of the plurality of leads and a resin sealing body for sealing the semiconductor light emitting element, and one end A translucent fluorescent cover provided with an opening and adhered to the resin encapsulant, and excites the fluorescent substance mixed in the fluorescent cover by the light emitted from the semiconductor light emitting element, In a semiconductor light emitting device that extracts light having a wavelength different from light emitted from a light emitting element to the outside of the resin encapsulant, the fluorescent cover has the same shape as the resin encapsulant by injection molding a resin containing the phosphor. Is formed into a predetermined shape having an inner surface of and is replaceably attached to the resin sealing body, and the fluorescent cover attached to the resin sealing body has elasticity, To the inside of the fluorescent cover Is excited by light having a relatively small emission wavelength emitted from the semiconductor light emitting element, and extracts light having a relatively large emission wavelength different from light emitted from the semiconductor light emitting element. Light emitting device.
〜４８０ｎｍであり、前記蛍光体により変換された発光
波長は５００〜６００ｎｍである請求項１に記載の半導
体発光装置。2. The emission wavelength of the semiconductor light emitting device is 430.
The semiconductor light emitting device according to claim 1, wherein the emission wavelength converted by the phosphor is 500 to 600 nm.
該封止部の一端側にこれと一体に形成されたほぼ半球状
のレンズ部とを備え、前記蛍光カバーは、円筒状のカバ
ー本体と、該カバー本体に一体に半球状に形成された球
面部とを備え、前記カバー本体は前記樹脂封止体の前記
封止部に合致する形状を有し、前記球面部は前記樹脂封
止体の前記レンズ部に合致する形状を有し、 前記カバー本体及び前記球面部は、それぞれ前記樹脂封
止体の前記封止部及びレンズ部に密着する請求項１又は
２に記載の半導体発光装置。3. The resin sealing body comprises a cylindrical sealing portion,
A substantially hemispherical lens portion integrally formed with the sealing portion is provided on one end side thereof, and the fluorescent cover has a cylindrical cover body and a spherical surface integrally formed with the cover body in a hemispherical shape. The cover body has a shape that matches the sealing portion of the resin sealing body, the spherical surface has a shape that matches the lens portion of the resin sealing body, The semiconductor light emitting device according to claim 1, wherein the main body and the spherical surface portion are in close contact with the sealing portion and the lens portion of the resin sealing body, respectively.
の空気を除去する複数個の小さな孔が前記蛍光カバーに
形成された請求項１〜３のいずれか１項に記載の半導体
発光装置。4. The semiconductor light emitting device according to claim 1, wherein a plurality of small holes for removing air between the resin encapsulant and the fluorescent cover are formed in the fluorescent cover. apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20436499A JP3491016B2 (en) | 1999-07-19 | 1999-07-19 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20436499A JP3491016B2 (en) | 1999-07-19 | 1999-07-19 | Semiconductor light emitting device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP00480397A Division JP3434658B2 (en) | 1997-01-14 | 1997-01-14 | Semiconductor light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000036624A JP2000036624A (en) | 2000-02-02 |
| JP3491016B2 true JP3491016B2 (en) | 2004-01-26 |
Family
ID=16489303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20436499A Expired - Fee Related JP3491016B2 (en) | 1999-07-19 | 1999-07-19 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3491016B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002133925A (en) * | 2000-10-25 | 2002-05-10 | Sanken Electric Co Ltd | Fluorescent cover and semiconductor light emitting device |
| JP4019067B2 (en) * | 2004-04-30 | 2007-12-05 | サンケン電気株式会社 | Semiconductor light emitting device |
| JP4027910B2 (en) * | 2004-04-30 | 2007-12-26 | サンケン電気株式会社 | Manufacturing method of semiconductor light emitting device |
| JP4019064B2 (en) * | 2004-04-30 | 2007-12-05 | サンケン電気株式会社 | Semiconductor light emitting device |
| JP4019065B2 (en) * | 2004-04-30 | 2007-12-05 | サンケン電気株式会社 | Semiconductor light emitting device |
| JP4019066B2 (en) * | 2004-04-30 | 2007-12-05 | サンケン電気株式会社 | Semiconductor light emitting device |
-
1999
- 1999-07-19 JP JP20436499A patent/JP3491016B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000036624A (en) | 2000-02-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3434658B2 (en) | Semiconductor light emitting device | |
| US7846754B2 (en) | High power light emitting diode package and method of producing the same | |
| TWI351774B (en) | Semiconductor light emitting device | |
| KR100867788B1 (en) | Light emitting device | |
| US20110089815A1 (en) | Light-emitting device | |
| JPH1153919A (en) | Semiconductor planar light source | |
| JP3564330B2 (en) | Semiconductor light emitting device | |
| JP2002133925A (en) | Fluorescent cover and semiconductor light emitting device | |
| JP2000049389A (en) | Semiconductor light emitting device and manufacture thereof | |
| JP3491016B2 (en) | Semiconductor light emitting device | |
| JP2003069084A (en) | Light emitting device | |
| JP2006128456A (en) | Light-emitting device | |
| JP4019067B2 (en) | Semiconductor light emitting device | |
| JP2011077214A (en) | Led lamp | |
| JP2000286454A (en) | Semiconductor planar light source | |
| JP2004274087A (en) | Semiconductor light-emitting device | |
| JP3678673B2 (en) | Semiconductor light emitting device | |
| JPH10242531A (en) | Planar light emitting equipment | |
| JP4019064B2 (en) | Semiconductor light emitting device | |
| JP3715904B2 (en) | Semiconductor light emitting device | |
| JP4019066B2 (en) | Semiconductor light emitting device | |
| JP2008021795A (en) | Light source device | |
| JP3715903B2 (en) | Semiconductor light emitting device | |
| JP2011009480A (en) | Light emitting device | |
| JP4019065B2 (en) | Semiconductor light emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081114 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091114 Year of fee payment: 6 |
|
| LAPS | Cancellation because of no payment of annual fees |