JP2004216408A - レーザ加工装置及びレーザ加工方法 - Google Patents
レーザ加工装置及びレーザ加工方法 Download PDFInfo
- Publication number
- JP2004216408A JP2004216408A JP2003004974A JP2003004974A JP2004216408A JP 2004216408 A JP2004216408 A JP 2004216408A JP 2003004974 A JP2003004974 A JP 2003004974A JP 2003004974 A JP2003004974 A JP 2003004974A JP 2004216408 A JP2004216408 A JP 2004216408A
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- Prior art keywords
- laser
- side plate
- laser processing
- workpiece
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- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000003754 machining Methods 0.000 title abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 43
- 238000012545 processing Methods 0.000 claims description 90
- 238000003672 processing method Methods 0.000 claims description 23
- 230000003287 optical effect Effects 0.000 claims description 16
- 239000000853 adhesive Substances 0.000 claims description 12
- 230000001070 adhesive effect Effects 0.000 claims description 12
- 238000003825 pressing Methods 0.000 claims description 12
- 125000006850 spacer group Chemical group 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 5
- 239000011368 organic material Substances 0.000 claims description 3
- 239000000835 fiber Substances 0.000 abstract description 70
- 239000010453 quartz Substances 0.000 abstract description 70
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 70
- 230000003685 thermal hair damage Effects 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 25
- 238000005520 cutting process Methods 0.000 description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 238000010586 diagram Methods 0.000 description 14
- 229910001220 stainless steel Inorganic materials 0.000 description 12
- 239000010935 stainless steel Substances 0.000 description 12
- 238000002679 ablation Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 6
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 5
- 239000012530 fluid Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000002390 adhesive tape Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910001374 Invar Inorganic materials 0.000 description 1
- DUGOZIWVEXMGBE-UHFFFAOYSA-N Methylphenidate Chemical compound C=1C=CC=CC=1C(C(=O)OC)C1CCCCN1 DUGOZIWVEXMGBE-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Images
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- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003004974A JP2004216408A (ja) | 2003-01-10 | 2003-01-10 | レーザ加工装置及びレーザ加工方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003004974A JP2004216408A (ja) | 2003-01-10 | 2003-01-10 | レーザ加工装置及びレーザ加工方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004216408A true JP2004216408A (ja) | 2004-08-05 |
| JP2004216408A5 JP2004216408A5 (enrdf_load_stackoverflow) | 2006-01-26 |
Family
ID=32895775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003004974A Pending JP2004216408A (ja) | 2003-01-10 | 2003-01-10 | レーザ加工装置及びレーザ加工方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004216408A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12129570B2 (en) * | 2021-08-18 | 2024-10-29 | Disco Corporation | Manufacturing method of single-crystal silicon substrate |
-
2003
- 2003-01-10 JP JP2003004974A patent/JP2004216408A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12129570B2 (en) * | 2021-08-18 | 2024-10-29 | Disco Corporation | Manufacturing method of single-crystal silicon substrate |
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