JP2004214500A5 - - Google Patents

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Publication number
JP2004214500A5
JP2004214500A5 JP2003001264A JP2003001264A JP2004214500A5 JP 2004214500 A5 JP2004214500 A5 JP 2004214500A5 JP 2003001264 A JP2003001264 A JP 2003001264A JP 2003001264 A JP2003001264 A JP 2003001264A JP 2004214500 A5 JP2004214500 A5 JP 2004214500A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2003001264A
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Japanese (ja)
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JP4304984B2 (ja
JP2004214500A (ja
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Priority to JP2003001264A priority Critical patent/JP4304984B2/ja
Priority claimed from JP2003001264A external-priority patent/JP4304984B2/ja
Publication of JP2004214500A publication Critical patent/JP2004214500A/ja
Publication of JP2004214500A5 publication Critical patent/JP2004214500A5/ja
Application granted granted Critical
Publication of JP4304984B2 publication Critical patent/JP4304984B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003001264A 2003-01-07 2003-01-07 窒化物半導体成長基板およびそれを用いた窒化物半導体素子 Expired - Fee Related JP4304984B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003001264A JP4304984B2 (ja) 2003-01-07 2003-01-07 窒化物半導体成長基板およびそれを用いた窒化物半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003001264A JP4304984B2 (ja) 2003-01-07 2003-01-07 窒化物半導体成長基板およびそれを用いた窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2004214500A JP2004214500A (ja) 2004-07-29
JP2004214500A5 true JP2004214500A5 (cg-RX-API-DMAC7.html) 2006-02-16
JP4304984B2 JP4304984B2 (ja) 2009-07-29

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ID=32819333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003001264A Expired - Fee Related JP4304984B2 (ja) 2003-01-07 2003-01-07 窒化物半導体成長基板およびそれを用いた窒化物半導体素子

Country Status (1)

Country Link
JP (1) JP4304984B2 (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100356595C (zh) * 2004-09-27 2007-12-19 晶元光电股份有限公司 Ⅲ族氮化物半导体元件及其制造方法
WO2009046577A1 (en) * 2007-10-12 2009-04-16 Lattice Power (Jiangxi) Corporation Method for fabricating an n-type semiconductor material using silane as a precursor
KR101393354B1 (ko) 2007-12-27 2014-05-13 서울바이오시스 주식회사 질화갈륨계 버퍼층 및 그것을 형성하는 방법
JP6368924B2 (ja) * 2012-08-30 2018-08-08 日亜化学工業株式会社 半導体装置
CN103280503B (zh) * 2013-05-23 2017-02-08 台州市一能科技有限公司 半导体器件
JP6379265B1 (ja) * 2017-09-12 2018-08-22 日機装株式会社 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法

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