JP2004180424A - Stack structure of semiconductor power converter - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To miniaturize an apparatus and reduce the cost by a method wherein all capacitors of a capacitor bank can be cooled uniformly, and fan capability can be designed to be low. <P>SOLUTION: In a power converter stack in which not only a switching module 22 like an IGBT and a rectifier module 23 which are arranged on a heat sink 24 but also electrolytic capacitors 18, 19, 20, 21 can be cooled simultaneously by using a fan 25, the capacitors 20, 21 on the downwind side are hard to be cooled as compared with the capacitors 18, 19 on the windward side, so that deflectors (cooling wind guide plates) 28, 29 are arranged in this case. As a result, the capacitors 20, 21 are hit by cooling wind as much as possible, and cooling is performed uniformly. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a stack structure of a semiconductor power conversion device, and more particularly to a stack structure of a semiconductor power conversion device with an improved cooling method of a smoothing capacitor.
[0002]
[Prior art]
FIG. 6 shows an example of a very common voltage-type inverter using an IGBT (insulated gate bipolar transistor) as a semiconductor element. In the figure, 1, 3, 5, 7, 9, 11 are IGBTs, 2, 4, 6, 8, 10, 12 are FWDs (flywheel diodes), 13 is a three-phase AC input power supply, 14 is a rectifier circuit, Reference numeral 15 denotes a smoothing capacitor, 16 denotes a motor load, and 17 denotes a power converter stack.
[0003]
FIG. 7 shows an example of a conventionally known inverter stack structure (for example, see Patent Documents 1 and 2). In the figure, 18, 19, 20, and 21 are electrolytic capacitors (smoothing capacitors), 22 is an IGBT module, 23 is a rectifier circuit module, 24 is a heat sink, 25 is a fan, and 26 and 27 are capacitor bank side plates.
That is, the IGBT module 22 and the rectifier circuit module 23 are installed on the heat sink 24, and the electrolytic capacitors 18, 19, 20, and 21 are arranged on the front surface of the heat sink 24. Instead, the electrolytic capacitors 18 to 21 are also cooled at the same time.
[0004]
[Patent Document 1]
JP-A-09-023079 (page 3, FIG. 1)
[Patent Document 2]
JP-A-06-078562 (page 4-5, FIG. 6-7)
[0005]
[Problems to be solved by the invention]
However, in the conventional inverter stack as described above, there is a problem that the cooling air hardly hits the condenser installed on the leeward side of the cooling air, so that the cooling cannot be performed sufficiently.
FIG. 8 briefly explains this. In FIG. 8, the electrolytic capacitors 20 and 21 installed on the leeward side are harder to hit by the cooling air and are harder to cool than the electrolytic capacitors 18 and 19 installed on the leeward side. Therefore, the size of the apparatus becomes large.
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to reduce the size of the apparatus and to reduce the cost by uniformly cooling all the capacitors in the stack.
[0006]
[Means for Solving the Problems]
In order to solve such a problem, the invention according to claim 1 has a stack structure of a power conversion device including a semiconductor element,
A deflector (cooling air guide plate) is provided between a capacitor in the capacitor bank constituting the smoothing capacitor and a side plate of the capacitor bank. Further, the shape of the deflector may be triangular with the side plate of the capacitor bank as the base (the invention of claim 2), or the shape of the deflector may be half with the side plate of the capacitor bank as the base. The shape of the deflector may be a circular plate (the invention of the third aspect), or the shape of the deflector may be a flat plate, and may be installed obliquely with respect to the side plate of the capacitor bank (the invention of the fourth aspect).
In the inventions of the above-described claims 1 to 4, another deflector can be provided at the center of the adjacent capacitors with respect to the capacitor group in the capacitor bank (the inventions of claims 5 to 7).
[0007]
That is, in the inventions of claims 1 to 4, a deflector (cooling wind guide plate) is provided between the electrolytic capacitor and the capacitor bank side plate so as to directly apply cooling air to the electrolytic capacitor provided on the leeward side. It is characterized by the following. In the inventions of claims 1 to 4, another deflector can be provided at the center of adjacent capacitors with respect to the capacitor group in the capacitor bank (the inventions of claims 5 to 7).
[0008]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 is a plan view showing a first embodiment of the present invention.
As shown in the figure, a deflector (cooling air) for directly blowing air to the electrolytic capacitors 20 and 21 installed on the leeward side between the electrolytic capacitor and the capacitor bank side plate in the electrolytic capacitor bank as a smoothing capacitor. The feature is that guide plates 28 and 29 are provided. The shape of this deflector is a triangle with the side plates 26 and 27 as the bottom sides when viewed from a direction perpendicular to the paper surface of FIG. The rest is the same as FIG.
[0009]
Therefore, when the cooling air is sucked in from the fan 25, the wind direction changes as shown by the arrow in FIG. 1 due to the presence of the deflectors 28 and 29, and the wind directly hits the electrolytic capacitors 20 and 21 installed on the leeward side. So that they become cooled. Further, since the deflector has a triangular shape, the cooling air is sucked into the heat sink 24 as it is, so that the IGBT module 22 and the rectifier circuit module 23 can be cooled at the same time.
[0010]
FIG. 2 shows a modification of FIG.
This is an example in which the shape of the deflectors 30 and 31 is a semicircle with the side plate 27 as the bottom when viewed from a direction perpendicular to the paper surface of FIG. Other details are the same as those in FIG.
FIG. 3 shows a further modification of FIG.
In this case, the deflectors 32 and 33 are formed in a flat plate shape and are installed obliquely with respect to the side plates 26 and 27 of the capacitor bank.
[0011]
FIG. 4 is a plan view showing a second embodiment of the present invention.
This is because, in addition to the deflectors 28 and 29 similar to those in FIG. 1, diamonds are formed at the center of the upstream electrolytic capacitors 18 and 19 and the downstream electrolytic capacitors 20 and 21 when viewed from a direction perpendicular to the plane of FIG. A deflector 34 having a shape is added.
Therefore, when the cooling air is sucked from the fan 25, the flow of the cooling air not only cools the electrolytic capacitors 20 and 21 installed on the leeward side, but also cools the heat Since it is sucked, the IGBT module 22 and the rectifier circuit module 23 can be cooled at the same time.
[0012]
FIG. 5 shows a modification of FIG.
This is different from FIG. 4 in that a circular deflector 35 is provided instead of the deflector 34 in FIG. 4 when viewed from a direction perpendicular to the paper surface.
FIGS. 4 and 5 show an example in which the deflectors 34 and 35 are provided for the one shown in FIG. 1, but it is needless to say that the deflectors 34 and 35 can be provided for the one shown in FIGS.
[0013]
【The invention's effect】
According to the present invention, in a stack structure of a semiconductor power conversion device, a deflector (cooling air guide plate) is provided in a capacitor bank of a smoothing conductor, so that a semiconductor device such as an IGBT module or a rectifier circuit module can be cooled. In addition, since all the electrolytic capacitors can be uniformly cooled, the fan capacity can be designed to be low, and the size and cost of the device can be reduced. The present invention can be used in the same manner as above even when the direction of the cooling air is reversed.
[Brief description of the drawings]
1 is a plan view showing a first embodiment of the present invention; FIG. 2 is a plan view showing a first modification of FIG. 1; FIG. 3 is a plan view showing a second modification of FIG. 1; FIG. 4 is a plan view showing a second embodiment of the present invention; FIG. 5 is a plan view showing a modification of FIG. 4; FIG. 6 is a circuit diagram showing a very common voltage source inverter; FIG. FIG. 8 is a perspective view showing a conventional example of a device stack structure. FIG. 8 is a plan view of FIG.
1, 3, 5, 7, 9, 11, IGBT (insulated gate bipolar transistor), 2, 4, 6, 8, 10, 12, FWD (flywheel diode), 13 three-phase AC input power supply, 14 ... Rectifier circuit, 15 ... Smoothing capacitor, 16 ... Motor load, 17 ... Power converter stack, 18-21 ... Electrolytic capacitor (smoothing capacitor), 22 ... IGBT module, 23 ... Rectifier circuit module, 24 ... Heat sink, 25 ... Fans, 26, 27 ... Condenser bank side plates, 28-35 ... Deflectors (cooling air guide plates).

Claims (7)

A stack structure of a power conversion device including a semiconductor element,
A stack structure of a semiconductor power conversion device, wherein a deflector (cooling air guide plate) is provided between a capacitor in a capacitor bank constituting a smoothing capacitor and a side plate of the capacitor bank. The stack structure of a semiconductor power conversion device according to claim 1, wherein the shape of the deflector is a triangular shape with a side plate of the capacitor bank as a base. 2. The stack structure of a semiconductor power conversion device according to claim 1, wherein the shape of the deflector is a semicircle with a side plate of the capacitor bank as a base. The stack structure of the semiconductor power conversion device according to claim 1, wherein the shape of the deflector is a flat plate shape, and the deflector is installed obliquely with respect to a side plate of the capacitor bank. The stack structure of a semiconductor power conversion device according to any one of claims 1 to 4, wherein another deflector is provided at a center of the group of capacitors in the capacitor bank. The stack structure of a semiconductor power conversion device according to claim 5, wherein a cross section of the other deflector has a rhombic shape. The stack structure of the semiconductor power conversion device according to claim 5, wherein a cross section of the other deflector has a circular shape.

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