JP2004172238A - Method of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device wherein a semiconductor element and a circuit wiring board, both of which have many fine electrodes arranged at a narrow pitch, are bonded to each other by flip chip bonding using solder bumps, with a sufficient bonding reliability being secured between the two components. <P>SOLUTION: One embodiment provides the method of manufacturing a semiconductor device. When bonding the semiconductor element and the circuit wiring board, both of which have electrodes on a principal plane, by flip chip bonding using solder bumps, a resist film having openings is formed over the electrodes formed on the principal plane of the semiconductor and/or the circuit wiring board, and metal bumps having a thickness not larger than that of the resist film are formed inside the openings. Thereafter, the resist film is removed, and the metal bumps are abutted in conformity with the electrodes on the principal plane of the other component. A space between both principal planes is filled with a thermosetting adhesive. By heating, the thermosetting adhesive is hardened, and at the same time, the metal bumps are melted to connect the electrodes on both principal planes. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for mounting a semiconductor element on a circuit wiring board using solder bumps.
[0002]
[Prior art]
There is an increasing demand for high-density mounting of electronic components, and the bare chip mounting method is attracting attention. The connection structure in this bare chip mounting has changed from face-up mounting by wire bonding to face-down mounting such as flip chip bonding using solder bumps. In the bonding using the solder bump, the solder bump is formed on the electrode on the surface of the semiconductor element. As this forming method, there are an electrolytic plating method, a vapor deposition method, a printing method for forming through a process such as resist film formation and solder paste filling. After the bumps are formed, the flux is applied for bonding to the circuit wiring board, alignment is performed, and reflow heating is performed for bonding. Further, in order to ensure long-term bonding reliability, an adhesive is injected into the gap between the semiconductor element and the circuit wiring board and cured.
[0003]
In the conventional bump formation / bonding process, an opening is formed in the electrode formation region of the insulating film formed on the semiconductor element, an electrode pattern is formed, a photosensitive positive resist film is applied, and a region other than the electrode pattern region is formed by a photo process. The resist film having an opening on the electrode pattern region is left by developing, and the resist film opening is filled with a solder paste, and after removing the resist film, the solder is melted by heating and cooling (wet back). Then, the solder bumps are fixed on the electrode pattern. Next, the semiconductor element on which the solder bump is formed is aligned with the electrode of the circuit wiring board by a flip chip method, and reheated to form a joined body. Subsequently, the gap between the semiconductor element between the solder bump and the circuit wiring board is formed. Inject and cure the underfill agent to fix both.
[0004]
(3) Problems to be Solved by the Invention In the above method, when the solder bumps are melted, they become spherical due to surface tension. Therefore, when the electrodes and the distance between the electrodes are made finer, the gap between adjacent bumps is increased during wet back. A bridge occurs. K, L, and M in FIG. 5 are cross-sectional structures of the semiconductor element for illustrating a process of forming solder bumps on the electrode pattern. In FIG. 5K, the insulating film 2 and the electrode pattern 3 are formed on the semiconductor element 1, and the photosensitive positive resist film 4 is developed on the insulating film 2 so as to open the resist film 4 in the electrode pattern region. Is filled with solder paste 6. At L in FIG. 5, the resist film is removed, leaving the columnar solder paste 6 on the electrode pattern, and when M is melted (wet back) by heating and cooling at M in FIG. 5, the solder bumps 7 become spherical. And there is a risk of contact between neighbors. In addition, since the solder bumps 7 have a spherical shape, the height of the solder bumps is reduced by miniaturization, so that the gap between the semiconductor element and the circuit wiring board is narrowed, and for quick and uniform injection of the underfill agent, It becomes necessary to reduce the viscosity, and the amount of filler added for adjusting the coefficient of thermal expansion of the adhesive composition must be reduced, resulting in a decrease in adhesive strength. In order to prevent the occurrence of bridging, a structure is proposed in which bumps are formed while leaving the resist film, and in order to obtain a sufficient bump height, a bump is projected from the resist film by using an electroplating method. However, in this method, the top of the solder bump becomes a spherical surface, which causes a decrease in alignment accuracy when aligning the two, and inevitably, the bump protrusion becomes a mushroom, which is a sticking type. This causes problems such as difficulty in peeling off the sheet-like resist film (see, for example, Patent Document 1).
[0005]
[Patent Document 1]
Japanese Laid-Open Patent Publication No. 6-13382 (A) (Page 6, Figure 6)
[0006]
[Problems to be solved by the invention]
The present invention is to solve the above-mentioned disadvantages of the prior art, and its purpose is to prevent the occurrence of bridges between adjacent bumps and to secure a sufficient bump height in the miniaturization of electrode spacing. Another object of the present invention is to provide a technique that enables quick and uniform injection even with an underfill agent having a high adhesive strength and a relatively high viscosity.
[0007]
[Means for Solving the Problems]
In order to achieve the above object, the first means disclosed in the present application is, as shown in the process cross-sectional views of FIGS. 1A to 3H in one embodiment, in the opening formed in the resist film, Solder bump 7 is supplied by electrolytic plating, or using a finer solder powder (average particle size of about 10 μm, 5 to 20 μm) than the conventional particle size distribution (average particle size of about 34 μm, 20 to 40 μm), Filled with solder paste. Next, wet back was performed with the resist film left, and then the resist film was peeled and removed to obtain a bump diameter as designed, thereby preventing bridging between adjacent bumps.
[0008]
Furthermore, the second means realizes the shape of the bump having a columnar shape and a flat surface at the top by adjusting the height of the solder bump to be equal to or less than the thickness of the resist film. Thereby, the alignment / alignment accuracy between the semiconductor element and the circuit wiring board is improved.
The third means is that the resist film is formed more than twice by a multilayer film or a plurality of processes, the bump height is increased, and the pitch size P is increased as shown in I and J of FIG. On the other hand, an opening having a pad diameter D (80% of the maximum pitch size, Max. D = 0.8 P) that does not contact the adjacent bump was patterned, and a solder bump was formed on the electrode by electrolytic plating. Next, after the wet back treatment, the resist film was removed. Then, the semiconductor element having solder bumps is aligned with the corresponding electrode of the circuit wiring board by a flip chip method, and the gap between them is filled with an inorganic substance (alumina or AlN powder) filler for adjusting the flux component and the thermal expansion coefficient. Form a structure filled with adhesive.
[0009]
At this time, the electrodes of the semiconductor element are allowed to a range of about 80% of the pitch size due to the following effects. In the conventional method of removing the resist film and performing wet back, the sphere is formed by the surface tension of the metal when the solder is melted. Therefore, when the pad diameter is about 60% or more of the pitch size, it comes into contact with the adjacent bump, Although a short circuit occurs, by performing wet back while leaving the resist film, the bump shape becomes a columnar shape and is covered with an adhesive after bonding, so that a short circuit with an adjacent bump does not occur.
[0010]
As a fourth means, the reason why the diameter of the columnar bump is limited to 40 to 80% of the pitch size of the electrode interval is that if 40% or less, the desired bonding reliability cannot be ensured due to the reduction of the bonding area, and 80% or more. In such a case, the rigidity of the photosensitive resist may be deteriorated and may be damaged during the process, and a short circuit such as a bridge occurs due to the adhesive not spreading over the entire surface when bonded to the wiring board, so that the bonding reliability cannot be ensured. by.
[0011]
In addition, as a fifth means, the filler for adjusting the thermal expansion coefficient added as an adhesive composition at the time of bonding has a small gap between the semiconductor element and the circuit wiring board corresponding to the pitch size in the conventional method, and the fluidity of the adhesive is small. However, in the present invention, the bump shape is columnar and the amount of solder (height) is twice or more, so the gap amount between the semiconductor element and the circuit wiring board is 2 It becomes more than double, and even an adhesive with high viscosity can be injected. As a result of the study in the present invention, even an addition amount of up to about 80% can be injected and bonding is possible. Therefore, since the adjustment range (addition amount of the inorganic substance) of the thermal expansion coefficient associated with the selection of the circuit wiring board is large, an improvement in bonding reliability is expected. When bonding to the circuit wiring board, an adhesive having a flux component is applied, the semiconductor element and the circuit wiring board are bonded to each other by curing the adhesive, and the electrodes are bonded to each other by melting and individualizing the solder. The stress relaxation effect was further enhanced.
[0012]
Furthermore, as a sixth means, after applying a thermosetting adhesive to at least one main surface of the semiconductor element or circuit wiring board, the metal bump is aligned and brought into contact with the electrode on the other main surface, It is also possible to form a structure in which the space between both main surfaces is filled with a thermosetting adhesive. This makes it possible to first select the optimum filler amount and viscosity of the thermosetting adhesive regardless of the gap between the two main surfaces.
[0013]
The solder bump plating composition and the solder powder composition used in the present invention can be of a wide variety of compositions, for example, Sn, Pb, Ag, Cu, In, Bi, Zn, Sb, etc. A method using a liquid or solder powder obtained by appropriately mixing and alloying materials of these compositions is preferable.
As a method for supplying solder bumps to the openings of the heat-resistant film in the present invention, both solder plating electrolytic plating and solder paste filling may be used. As a selection scale of these methods, when the pitch size is relatively large and the solder bump height is not required, a printing method using a solder paste that can be formed at low cost, and stress relaxation by increasing the solder height are used. Therefore, in a mounting method that requires a narrow pitch size, it is desirable to select an electrolytic plating method and form solder bumps.
[0014]
As described above, in the present invention, it is possible to bond a bonding electrode and a resin to a minute electrode with a narrow pitch of 50 μm or less with high accuracy, and it is possible to improve bonding reliability in a minute connection portion.
[0015]
DETAILED DESCRIPTION OF THE INVENTION
The materials commonly used in the embodiments of the present invention are exemplified below, but are not limited thereto.
Metal material-1 (Solder plating film)
Sn-Bi electrolytic plating solution, Sn-Bi plating solution mixed so as to have composition Sn-57wt% Bi. Thickness variation: within the range of resist thickness ± 10% height The current value and stirring conditions were set.
Metal material-2 (solder paste)
The solder powder used had a composition of Sn-3.5 wt% Ag, an average particle size of 14 μm, and a particle size distribution of 10 to 20 μm.
As a rosin, a mixture of 47 g of polypele, 53 g of benzyl benzoate, and 2 g of succinic anhydride was used as a flux bificle, which was mixed with solder powder at a ratio of 1: 9 to obtain a solder paste.
Metal material- 3 (Solder paste)
As the solder powder, a composition having a composition of Sn-57 wt% Bi-1 wt% Ag and an average particle diameter of 14 μm and a particle size distribution of 10 to 20 μm was used.
As a rosin, a mixture of 47 g of polypele, 53 g of benzyl benzoate, and 2 g of succinic anhydride was used as a flux bificle, which was mixed with solder powder at a ratio of 1: 9 to obtain a solder paste.
Metal material- 4 (Solder paste)
As the solder powder, a shape having a composition of Sn-3.5 wt% Ag, an average particle size of 35 μm, and a particle size distribution of 20 to 40 μm was used.
As a rosin, a mixture of 47 g of polypele, 53 g of benzyl benzoate, and 2 g of succinic anhydride was used as a flux bificle, which was mixed with solder powder at a ratio of 1: 9 to obtain a solder paste.
Resin material -1 (photosensitive positive resist film)
Acrylate film, film thickness 25μm
Resin material-2 (adhesive composition)
Resin material-2 was prepared by mixing epoxy powder with silica powder (average particle size 4 μm) at a ratio of 50 to 80 wt%.
[0016]
A method for manufacturing a semiconductor device according to the present invention will be specifically described below along A to J in FIG. 1 and sectional views of steps I and J in FIG. 4.
Example 1 : Photoresist made of resin material-1 on insulating film 2 formed on the surface of semiconductor element 1 and electrode pattern 3 having a pitch size of 200 μm and an electrode pad diameter of 100 μm (2000 electrodes). The film 4 was attached at 100 ° C., and the photoresist film 4 was exposed / developed using the photomask 5 to form an opening of 100 μmφ on the electrode pattern 3. N-methyl 2-pyrrolidone was used for development. A solder plating film 6 made of metal material-1 was formed in the formed opening by electrolytic plating so as to have a film thickness of about 20 ± 2 μm. Next, flux (not shown) was applied and then melted and solidified (wet back). Thereafter, the film-like acrylate resin was removed with a 5% monoethanolamine aqueous solution to obtain a columnar solder bump 7 having the same diameter as the opening of the photoresist film 4 on the electrode pattern 3. An electrode is positioned and mounted on a circuit wiring board (made of BT resin) 8 on which the semiconductor element 1 is mounted, and after applying the resin material-2, Max. Reflow bonding was performed with a temperature profile of 230 ° C. (melting point: 138 ° C.) or more and about 5 minutes. As a result, it was confirmed that a good joint 9 was formed. As for the connection reliability, as a result of 2000 cycles of a temperature cycle test at −55 to 125 ° C., the resistance increase was as good as 10% or less.
[0017]
Example 2 : Resin material-1 was applied to the surface of a semiconductor element having a pitch size of 100 μm and an electrode pad diameter of 50 μm (2000 electrodes) at 100 ° C., and an opening of 50 μmφ was formed on the electrode by exposure / development. Formed. N-methyl 2-pyrrolidone was used for development. Metal material-1 was formed into a film thickness of about 20 ± 2 μm by electrolytic plating in the formed opening. Next, after applying the flux, it was wet-backed. Thereafter, the film-like acrylate resin was removed with a 5% monoethanolamine aqueous solution. After aligning and mounting the electrodes on the wiring board (made of BT resin) on which this semiconductor element is mounted, and applying the resin material-2, Max. Reflow bonding was performed with a temperature profile of 230 ° C. (melting point: 138 ° C.) or more and about 5 minutes. As a result, it was confirmed that a good joint was formed. As for the connection reliability, as a result of 2000 cycles of a temperature cycle test at −55 to 125 ° C., the resistance increase was as good as 10% or less.
[0018]
Example 3 : Resin material-1 was attached to the surface of a semiconductor element having a pitch size of 50 μm and an electrode pad diameter of 25 μm (2000 electrodes) at 100 ° C., and an opening of 25 μmφ was formed on the electrode by exposure / development. did. N-methyl 2-pyrrolidone was used for development. Metal material-1 was formed into a film thickness of about 20 ± 2 μm by electrolytic plating in the formed opening. Next, after applying the flux, it was wet-backed. Thereafter, the film-like acrylate resin was removed with a 5% monoethanolamine aqueous solution. After aligning and mounting the electrodes on the wiring board (made of BT resin) on which this semiconductor element is mounted, and applying the resin material-2, Max. Reflow bonding was performed with a temperature profile of 230 ° C. (melting point: 138 ° C.) or more and about 5 minutes. As a result, it was confirmed that a good joint was formed. As for the connection reliability, as a result of 2000 cycles of a temperature cycle test at −55 to 125 ° C., the resistance increase was as good as 10% or less.
[0019]
Example 4 : Two resin materials-1 are stacked on the surface of a semiconductor element having a pitch size of 50 μm and an electrode pad diameter of 40 μm (the number of electrodes is 2000) and bonded at 100 ° C. An opening was formed. N-methyl 2-pyrrolidone was used for development. Metal material-1 was formed into a film thickness of about 40 ± 4 μm by electrolytic plating in the formed opening. Next, after applying the flux, it was wet-backed. Thereafter, the film-like acrylate resin was removed with a 5% monoethanolamine aqueous solution. An electrode is aligned and mounted on a wiring board (made of BT resin) on which this semiconductor element is mounted, and after applying resin material-2, Max. Reflow bonding was performed with a temperature profile of 230 ° C. (melting point: 138 ° C.) or more and about 5 minutes. As a result, it was confirmed that a good joint was formed. As for the connection reliability, as a result of 2000 cycles of a temperature cycle test at −55 to 125 ° C., the resistance increase was as good as 10% or less.
[0020]
Example 5 : Resin material-1 was attached to the surface of a semiconductor element having a pitch size of 100 μm and an electrode pad diameter of 50 μm (2000 electrodes) at 100 ° C., and an opening of 50 μmφ was formed on the upper part of the electrode by exposure / development. To do. N-methyl 2-pyrrolidone was used for development. The opening formed with the metal material-2 was filled with a urethane rubber squeegee. Next, after applying the flux, it was wet-backed. Thereafter, the film-like acrylate resin was removed with a 5% monoethanolamine aqueous solution. After applying the resin material-2 on the surface of the wiring board (made of BT resin) on which this semiconductor element is mounted, the electrodes on both main surfaces are aligned and mounted, and Max. Reflow bonding was performed with a temperature profile of 230 ° C. (melting point 221 ° C.) or more and about 2 minutes. As a result, it was confirmed that a good joint was formed. As for the connection reliability, as a result of 2000 cycles of a temperature cycle test at −55 to 125 ° C., the resistance increase is as good as 10% or less. Further, even after being left for 1000 hours in an environment of 121 ° C./85%, it was confirmed that the resistance increase was as good as 10% or less as in the cycle test. Obviously it will be improved.
[0021]
Example 6 : Resin material-1 was attached to the surface of a semiconductor element having a pitch size of 100 μm and an electrode pad diameter of 50 μm (number of electrodes: 2000) at 100 ° C., and an opening of 50 μmφ was formed above the electrodes by exposure / development. To do. N-methyl 2-pyrrolidone was used for development. The opening formed with metal material-3 was filled with a urethane rubber squeegee. Next, after applying the flux, it was wet-backed. Thereafter, the film-like acrylate resin was removed with a 5% monoethanolamine aqueous solution. After applying the resin material-2 on the surface of the wiring board (made of BT resin) on which this semiconductor element is mounted, both electrodes are aligned and mounted, and a Max. Reflow bonding was performed with a temperature profile of 230 ° C. (melting point: 138 ° C.) or more and about 5 minutes. As a result, it was confirmed that a good joint was formed. As for the connection reliability, as a result of 2000 cycles of a temperature cycle test at −55 to 125 ° C., the resistance increase is as good as 10% or less. Further, even after being left for 1000 hours in an environment of 121 ° C./85%, it was confirmed that the resistance increase was as good as 10% or less as in the cycle test.
[0022]
Example 7 : Two resin materials-1 are stacked on the surface of a semiconductor element having a pitch size of 50 μm and an electrode pad diameter of 30 μm (2000 electrodes) and attached at 100 ° C., and exposed / developed with 40 μmφ on the electrode. An opening was formed. N-methyl 2-pyrrolidone was used for development. The metal material-1 was formed into a film thickness of about 40 ± 4 μm by electrolytic plating in the formed opening. Next, after applying the flux, it was wet-backed. Thereafter, the film-like acrylate resin was removed with a 5% monoethanolamine aqueous solution. After aligning and mounting the electrodes on the circuit wiring board (made of BT resin) on which this semiconductor element is mounted, and applying the resin material-2, Max. Reflow bonding was performed with a temperature profile of 230 ° C. (melting point: 138 ° C.) or more and about 5 minutes. At that time, the resin material-2 was cured by maintaining at 120 ° C. for the first 3 minutes, and the solder bump was remelted by maintaining at 200 ° C. for the next 2 minutes. As a result, it was confirmed that a good joint was formed. As for the connection reliability, as a result of 2000 cycles of a temperature cycle test at −55 to 125 ° C., the resistance increase was as good as 10% or less.
[0023]
(Appendix 1) A step of forming a heat-resistant film having an opening on at least one of the main surface of a semiconductor element and a circuit wiring board both having electrodes on the main surface, and the heat resistance in the opening A step of forming a metal bump having a height equal to or less than the thickness of the conductive film, a step of removing the heat-resistant film, a step of aligning and contacting the metal bump with the electrode on the other main surface, Filling a gap between the surfaces with a thermosetting adhesive, and curing the thermosetting adhesive by heating, and connecting the electrodes on both main surfaces with the metal bumps. A method of manufacturing a semiconductor device.
[0024]
(Additional remark 2) The manufacturing method of the semiconductor device of Additional remark 1 characterized by having a flat part in the top part of the said metal bump.
(Supplementary note 3) The method for manufacturing a semiconductor device according to supplementary note 1, wherein the heat-resistant film is formed by a multilayer film or a plurality of processes.
(Supplementary note 4) The semiconductor according to supplementary note 1, wherein in the heating, the thermosetting adhesive is first cured at a temperature lower than the melting point of the metal bump, and then the metal bump is melted and cooled and solidified. Device manufacturing method.
[0025]
(Supplementary Note 5) In the step of filling the thermosetting adhesive in the gap between the two main surfaces, at least one main surface of the semiconductor element or the circuit wiring board on which the metal bump has already been formed. After the thermosetting adhesive is applied to the main surface, the thermosetting adhesive is filled between the main surfaces by bringing the metal bumps into alignment contact with the electrodes on the other main surface. The manufacturing method of the semiconductor device of Additional remark 1.
[0026]
(Additional remark 6) The said metal bump is a solder metal, The manufacturing method of the semiconductor device of Additional remark 1 characterized by the above-mentioned.
(Appendix 7) The metal bumps in the opening are heated and melted and cooled and solidified after at least one of filling the opening with metal by electrolytic plating or filling with metal paste by printing. The method for manufacturing a semiconductor device according to appendix 1, wherein:
[0027]
(Additional remark 8) The said heat resistant film is a resin film, The manufacturing method of the semiconductor device of Additional remark 1 characterized by the above-mentioned.
(Additional remark 9) The diameter of the said metal bump is 40 to 80% of the pitch size of the said electrode, The manufacturing method of the semiconductor device of Additional remark 1 characterized by the above-mentioned.
(Additional remark 10) The filler addition amount of the said thermosetting adhesive agent exists in the range of 60-80 wt% of this thermosetting adhesive agent, The manufacturing method of the semiconductor device of Additional remark 1 characterized by the above-mentioned.
[0028]
(Appendix 11) After the metal bump is brought into alignment contact with the electrode on the other main surface, the metal bump is heated at a temperature equal to or lower than the melting point of the metal bump to fix the metal bump to the electrode. The method of manufacturing a semiconductor device according to appendix 1, wherein the thermosetting adhesive is injected into a gap between the surfaces.
(Additional remark 12) The said metal bump has a side wall perpendicular | vertical with respect to the said board | substrate main surface, The manufacturing method of the semiconductor device of Additional remark 1 characterized by the above-mentioned.
[0029]
(Additional remark 13) The said thermosetting adhesive agent contains a flux, The manufacturing method of the semiconductor device of Additional remark 1 characterized by the above-mentioned.
(Supplementary note 14) The method of manufacturing a semiconductor device according to supplementary note 9, wherein a diameter of the metal bump is larger than a diameter of the electrode.
[0030]
【The invention's effect】
According to the present invention, when joining a semiconductor element having an electrode with a narrow pitch size of 50 μm and a circuit wiring board, sufficient joining reliability can be ensured even if the solder bump diameter is 80% of the pitch size.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a manufacturing process of a semiconductor device of the present invention (part 1).
FIG. 2 is a cross-sectional view of a manufacturing process of a semiconductor device of the present invention (No. 2)
FIG. 3 is a cross-sectional view of a manufacturing process of a semiconductor device according to the present invention (part 3);
FIG. 4 is a sectional view of a semiconductor device according to an embodiment of the present invention (part 4).
FIG. 5 is a sectional view of a conventional solder bump formation process.
DESCRIPTION OF SYMBOLS 1, Semiconductor element 2, Insulating film 3, Electrode pattern 4, Photoresist film 5, Photomask 6, Solder plating film or solder paste 7, Solder bump 8, Circuit wiring board 9, Thermosetting adhesive

Claims (5)

A step of forming a heat-resistant film having an opening on at least one of the main surface of the semiconductor element and the circuit wiring board having electrodes on the main surface; and a film of the heat-resistant film in the opening. Forming a metal bump having a height less than the thickness, then removing the heat-resistant film, aligning and contacting the metal bump with the electrode on the other main surface, and between the two main surfaces A step of filling the gap with a thermosetting adhesive; and a step of curing the thermosetting adhesive by heating and connecting the electrodes on both main surfaces by the metal bumps. A method for manufacturing a semiconductor device. 2. The method of manufacturing a semiconductor device according to claim 1, wherein a flat portion is provided on the top of the metal bump. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the heat resistant film is formed by a multilayer film or a plurality of processes. 2. The manufacturing of a semiconductor device according to claim 1, wherein in the heating, the thermosetting adhesive is first cured at a temperature equal to or lower than a melting point of the metal bump, and then the metal bump is melted and cooled and solidified. Method. In the step of filling the gap other than the metal bumps between the main surface substrates with the thermosetting adhesive, at least one of the semiconductor element and the circuit wiring board on which the metal bumps have already been formed. After the thermosetting adhesive is applied to the main surface of the surface, the thermosetting adhesive is filled between the two main surfaces by aligning and contacting the metal bumps with the electrode on the other main surface. The method of manufacturing a semiconductor device according to claim 1.

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