JP2004168555A5 - - Google Patents

Download PDF

Info

Publication number
JP2004168555A5
JP2004168555A5 JP2002332781A JP2002332781A JP2004168555A5 JP 2004168555 A5 JP2004168555 A5 JP 2004168555A5 JP 2002332781 A JP2002332781 A JP 2002332781A JP 2002332781 A JP2002332781 A JP 2002332781A JP 2004168555 A5 JP2004168555 A5 JP 2004168555A5
Authority
JP
Japan
Prior art keywords
high pressure
pages
symposium
proceedings
japan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002332781A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004168555A (ja
JP3855029B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002332781A priority Critical patent/JP3855029B2/ja
Priority claimed from JP2002332781A external-priority patent/JP3855029B2/ja
Publication of JP2004168555A publication Critical patent/JP2004168555A/ja
Publication of JP2004168555A5 publication Critical patent/JP2004168555A5/ja
Application granted granted Critical
Publication of JP3855029B2 publication Critical patent/JP3855029B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2002332781A 2002-11-15 2002-11-15 透光性超微粒ダイヤモンド焼結体の製造法 Expired - Lifetime JP3855029B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002332781A JP3855029B2 (ja) 2002-11-15 2002-11-15 透光性超微粒ダイヤモンド焼結体の製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002332781A JP3855029B2 (ja) 2002-11-15 2002-11-15 透光性超微粒ダイヤモンド焼結体の製造法

Publications (3)

Publication Number Publication Date
JP2004168555A JP2004168555A (ja) 2004-06-17
JP2004168555A5 true JP2004168555A5 (sv) 2006-03-02
JP3855029B2 JP3855029B2 (ja) 2006-12-06

Family

ID=32697704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002332781A Expired - Lifetime JP3855029B2 (ja) 2002-11-15 2002-11-15 透光性超微粒ダイヤモンド焼結体の製造法

Country Status (1)

Country Link
JP (1) JP3855029B2 (sv)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9103172B1 (en) * 2005-08-24 2015-08-11 Us Synthetic Corporation Polycrystalline diamond compact including a pre-sintered polycrystalline diamond table including a nonmetallic catalyst that limits infiltration of a metallic-catalyst infiltrant therein and applications therefor
CN103752220A (zh) 2008-02-06 2014-04-30 住友电气工业株式会社 多晶金刚石
JP5500508B2 (ja) * 2010-03-31 2014-05-21 三菱マテリアル株式会社 微粒多結晶ダイヤモンド焼結体の製造法
GB201311849D0 (en) * 2013-07-02 2013-08-14 Element Six Ltd Super-hard constructions and methods for making and processing same
CN106588018B (zh) * 2016-11-15 2019-05-07 上海交通大学 一种超高温碳化铪陶瓷纳米粉体的制备方法

Similar Documents

Publication Publication Date Title
JP2004168554A5 (sv)
JP2004196595A5 (sv)
BR9806136A (pt) Substrato de carbureto de silìco e método para a produção do substrato, e dispositivo semicondutor utilizand o substrato.
AU2003255160A1 (en) Silicon carbide thermostable porous structural material and process for producing the same
TW200509321A (en) Composite lid for land grid array (LGA) flip-chip package assembly
NO20040872L (no) Polymerisasjonskatalysatoraktivatorer, fremgangsmate for fremstilling og deres andvendelse i polymerisasjonsprosesser.
BR0314058A (pt) Composições para cuidados pessoais a base de álcool ramificado
JP2004168555A5 (sv)
BR0008538A (pt) Processos para preparar um material dissipador térmico para um refrigerador e para resfriar um produto com um refrigerador portátil, de uso único, e, material dissipador térmico encapsulado
EP0921214A4 (en) MONOCRYSTALLINE SILICON CARBIDE AND PREPARATION METHOD THEREOF
EP1502972A4 (en) SINGLE CRYSTAL SILICON PLATE AND EPITAXIAL PLATE, AND METHOD FOR PRODUCING A SINGLE SILICON CRYSTAL
JP2004168558A5 (sv)
EP1772540A4 (en) PROCESS FOR PREPARING A CRYSTAL OF A NITRIDE OF A METAL BELONGING TO THE GROUP 13 OF THE PERIODIC TABLE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING THE CRYSTAL
AU2003209712A8 (en) Group iii nitride semiconductor crystal, production method thereof and group iii nitride semiconductor epitaxial wafer
ATE205594T1 (de) Anordnung zur formschlüssigen aufnahme eines massstabs
AU2003213333A1 (en) Method of purifying silicon, silicon produced by the method and solar cell
DE59809935D1 (de) Versorgungssystem für chemikalien und dessen verwendung
MY141478A (en) Heat sensitive recording material
PL363944A1 (en) Silicon organic compound containing alkynol groups, material being subject to crosslinking and the form obtained through material crosslinking
GB2441840A (en) Process for the synthesis of arylfluorenes and analogues thereof
DK0871587T3 (da) Carbonnitrider med lav kompressibilitet
ATE323508T1 (de) Synthetische virus-ähnliche partikel mit heterologen epitopen.
DE60220028D1 (de) Schleifelement und schleifstein
CN209320405U (zh) 一种cvd金刚石膜片
EP1559813A4 (en) CRYSTAL, CRYSTAL WAFER, EPITACTIC WAFER, AND CRYSTAL TREATING METHOD